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ZXM62P03GTA ZXM62P03GTA Diodes Incorporated ZXM62P03G.pdf Description: MOSFET P-CH 30V 2.9A SOT223
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ZXM64N02XTC ZXM64N02XTC Diodes Incorporated ZXM64N02X.pdf Description: MOSFET N-CH 20V 5.4A 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-MSOP
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
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ZXM64N03XTC ZXM64N03XTC Diodes Incorporated ZXM64N03X.pdf Description: MOSFET N-CH 30V 5A 8MSOP
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ZXM64P02XTC ZXM64P02XTC Diodes Incorporated ZXM64P02X.pdf Description: MOSFET P-CH 20V 3.5A 8MSOP
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ZXM64P03XTC ZXM64P03XTC Diodes Incorporated ZXM64P03X.pdf Description: MOSFET P-CH 30V 3.8A 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-MSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V
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ZXM66P02N8TC ZXM66P02N8TC Diodes Incorporated ZXM66P02N8.pdf Description: MOSFET P-CH 20V 6.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2068 pF @ 15 V
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ZXMC3A16DN8TC ZXMC3A16DN8TC Diodes Incorporated ZXMC3A16DN8.pdf Description: MOSFET N/P-CH 30V 4.9A/4.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
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ZXMC3A17DN8TA ZXMC3A17DN8TA Diodes Incorporated ZXMC3A17DN8.pdf Description: MOSFET N/P-CH 30V 4.1A/3.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.1A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
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ZXMC3A17DN8TC ZXMC3A17DN8TC Diodes Incorporated ZXMC3A17DN8.pdf Description: MOSFET N/P-CH 30V 8SOIC
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ZXMC3A18DN8TA ZXMC3A18DN8TA Diodes Incorporated ZXMC3A18DN8.pdf Description: MOSFET N/P-CH 30V 8-SOIC
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ZXMC4559DN8TA ZXMC4559DN8TA Diodes Incorporated ZXMC4559DN8.pdf Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V, 1021pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
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ZXMC4A16DN8TA ZXMC4A16DN8TA Diodes Incorporated ZXMC4A16DN8.pdf Description: MOSFET N/P-CH 40V 4A/3.6A 8SOIC
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ZXMC4A16DN8TC ZXMC4A16DN8TC Diodes Incorporated ZXMC4A16DN8.pdf Description: MOSFET N/P-CH 40V 4A/3.6A 8SOIC
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ZXMD63C02XTC ZXMD63C02XTC Diodes Incorporated ZXMD63C02X.pdf Description: MOSFET N/P-CH 20V 8MSOP
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ZXMD63C03XTC ZXMD63C03XTC Diodes Incorporated ZXMD63C03X.pdf Description: MOSFET N/P-CH 30V 8MSOP
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ZXMD63N02XTC ZXMD63N02XTC Diodes Incorporated ZXMD63N02X.pdf Description: MOSFET 2N-CH 20V 2.5A 8MSOP
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ZXMD63N03XTC ZXMD63N03XTC Diodes Incorporated ZXMD63N03X.pdf Description: MOSFET 2N-CH 30V 2.3A 8MSOP
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ZXMD63P02XTC ZXMD63P02XTC Diodes Incorporated ZXMD63P02X.pdf Description: MOSFET 2P-CH 20V 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.04W
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-MSOP
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ZXMD63P03XTC ZXMD63P03XTC Diodes Incorporated ZXMD63P03X.pdf Description: MOSFET 2P-CH 30V 8MSOP
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ZXMD65P02N8TC ZXMD65P02N8TC Diodes Incorporated ZXMD65P02N8.pdf Description: MOSFET 2P-CH 20V 4A 8SOIC
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ZXMHC3A01T8TA ZXMHC3A01T8TA Diodes Incorporated ZXMHC3A01T8.pdf Description: MOSFET 2N/2P-CH 30V 2.7A/2A SM8
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V, 204pF @ 15V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SM8
Part Status: Active
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ZXMHN6A07T8TA ZXMHN6A07T8TA Diodes Incorporated ZXMHN6A07T8.pdf Description: MOSFET 4N-CH 60V 1.4A SM8
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.4A
Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SM8
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ZXMN10A07FTC ZXMN10A07FTC Diodes Incorporated ZXMN10A07F.pdf Description: MOSFET N-CH 100V 700MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V
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ZXMN10A08DN8TC ZXMN10A08DN8TC Diodes Incorporated ZXMN10A08DN8.pdf Description: MOSFET 2N-CH 100V 1.6A 8SOIC
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ZXMN10A08E6TC ZXMN10A08E6TC Diodes Incorporated ZXMN10A08E6.pdf Description: MOSFET N-CH 100V 1.5A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
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ZXMN10A11GTC ZXMN10A11GTC Diodes Incorporated ZXMN10A11G.pdf Description: MOSFET N-CH 100V 1.7A SOT223
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ZXMN10B08E6TC ZXMN10B08E6TC Diodes Incorporated ZXMN10B08E6.pdf Description: MOSFET N-CH 100V 1.6A SOT26
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ZXMN2A01E6TC ZXMN2A01E6TC Diodes Incorporated ZXMN2A01E6.pdf Description: MOSFET N-CH 20V 2.5A SOT23-6
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ZXMN2A01FTC ZXMN2A01FTC Diodes Incorporated ZXMN2A01F.pdf Description: MOSFET N-CH 20V 1.9A SOT23-3
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ZXMN2A02X8TC ZXMN2A02X8TC Diodes Incorporated ZXMN2A02X8.pdf Description: MOSFET N-CH 20V 6.2A 8-MSOP
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ZXMN2A03E6TC ZXMN2A03E6TC Diodes Incorporated ZXMN2A03E6.pdf Description: MOSFET N-CH 20V 3.7A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 837 pF @ 10 V
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ZXMN2A04DN8TC ZXMN2A04DN8TC Diodes Incorporated ZXMN2A04DN8.pdf Description: MOSFET 2N-CH 20V 5.9A 8SOIC
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ZXMN2AM832TA ZXMN2AM832TA Diodes Incorporated Description: MOSFET 2N-CH 20V 2.9A 8MLP
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ZXMN3A01E6TC ZXMN3A01E6TC Diodes Incorporated ZXMN3A01E6.pdf Description: MOSFET N-CH 30V 2.4A SOT23-6
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ZXMN3A01FTC ZXMN3A01FTC Diodes Incorporated ZXMN3A01F.pdf Description: MOSFET N-CH 30V 1.8A SOT23-3
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ZXMN3A02X8TC ZXMN3A02X8TC Diodes Incorporated ZXMN3A02X8.pdf Description: MOSFET N-CH 30V 5.3A 8MSOP
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ZXMN3A03E6TC ZXMN3A03E6TC Diodes Incorporated ZXMN3A03E6.pdf Description: MOSFET N-CH 30V 3.7A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
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ZXMN3A04DN8TC ZXMN3A04DN8TC Diodes Incorporated ZXMN3A04DN8.pdf Description: MOSFET 2N-CH 30V 6.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
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ZXMN3A06DN8TC ZXMN3A06DN8TC Diodes Incorporated ZXMN3A06DN8.pdf Description: MOSFET 2N-CH 30V 4.9A 8SOIC
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ZXMN3A06N8TA ZXMN3A06N8TA Diodes Incorporated Description: MOSFET 2N-CH 30V 8SOIC
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ZXMN3AM832TA ZXMN3AM832TA Diodes Incorporated ZXMN3AM832.pdf Description: MOSFET 2N-CH 30V 2.9A 8MLP
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ZXMN3B01FTA ZXMN3B01FTA Diodes Incorporated ZXMN3B01F.pdf Description: MOSFET N-CH 30V 1.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.93 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 15 V
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ZXMN3B04N8TC ZXMN3B04N8TC Diodes Incorporated ZXMN3B04N8.pdf Description: MOSFET N-CH 30V 7.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 15 V
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ZXMN3B14FTA ZXMN3B14FTA Diodes Incorporated ZXMN3B14F.pdf Description: MOSFET N-CH 30V 2.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.1A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 15 V
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6000+0.34 EUR
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ZXMN6A07FTC ZXMN6A07FTC Diodes Incorporated ZXMN6A07F.pdf Description: MOSFET N-CH 60V 1.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V
Produkt ist nicht verfügbar
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ZXMN6A08E6TC ZXMN6A08E6TC Diodes Incorporated Description: MOSFET N-CH 60V 2.8A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
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ZXMN6A09DN8TC ZXMN6A09DN8TC Diodes Incorporated ZXMN6A09DN8_Rev5.pdf Description: MOSFET 2N-CH 60V 4.3A 8SOIC
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ZXMN6A11DN8TC ZXMN6A11DN8TC Diodes Incorporated ZXMN6A11DN8.pdf Description: MOSFET 2N-CH 60V 2.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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ZXMN6A11GTC ZXMN6A11GTC Diodes Incorporated ZXMN6A11G.pdf Description: MOSFET N-CH 60V 3.1A SOT223
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ZXMNS3BM832TA ZXMNS3BM832TA Diodes Incorporated ZXMNS3BM832.pdf Description: MOSFET N-CH 30V 2A 8-MLP
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ZXMP4A16KTC ZXMP4A16KTC Diodes Incorporated ZXMP4A16K.pdf Description: MOSFET P-CH 40V 6.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 20 V
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ZXMP6A18KTC ZXMP6A18KTC Diodes Incorporated ZXMP6A18K.pdf Description: MOSFET P-CH 60V 6.8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 30 V
auf Bestellung 95000 Stücke:
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ZXRE1004CFTC ZXRE1004CFTC Diodes Incorporated ZXRE1004.pdf Description: IC VREF SHUNT 1.22V SOT23
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ZXRE1004DFTC ZXRE1004DFTC Diodes Incorporated ZXRE1004.pdf Description: IC VREF SHUNT 1.22V SOT23
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ZXRE1004DRSTOA ZXRE1004DRSTOA Diodes Incorporated ZXRE1004.pdf Description: IC VREF SHUNT 1.22V TO92-3
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ZXRE1004DRSTOB ZXRE1004DRSTOB Diodes Incorporated ZXRE1004.pdf Description: IC VREF SHUNT 1.22V TO92-3
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ZXRE1004DRSTZ ZXRE1004DRSTZ Diodes Incorporated ZXRE1004.pdf Description: IC VREF SHUNT 1% E-LINE
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ZXRE1004EFTC ZXRE1004EFTC Diodes Incorporated ZXRE1004Rev2022.pdf Description: IC VREF SHUNT 2% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 75ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.22V
Noise - 10Hz to 10kHz: 60µVrms
Current - Cathode: 8 µA
Current - Output: 20 mA
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ZXRE1004ER ZXRE1004ER Diodes Incorporated ZXRE1004.pdf Description: IC VREF SHUNT 1.22V TO92-3
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ZXRE1004ERSTOA ZXRE1004ERSTOA Diodes Incorporated ZXRE1004.pdf Description: IC VREF SHUNT 1.22V TO92-3
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ZXM62P03GTA ZXM62P03G.pdf
ZXM62P03GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 2.9A SOT223
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ZXM64N02XTC ZXM64N02X.pdf
ZXM64N02XTC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 5.4A 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-MSOP
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
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ZXM64N03XTC ZXM64N03X.pdf
ZXM64N03XTC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5A 8MSOP
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ZXM64P02XTC ZXM64P02X.pdf
ZXM64P02XTC
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.5A 8MSOP
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ZXM64P03XTC ZXM64P03X.pdf
ZXM64P03XTC
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 3.8A 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-MSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V
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ZXM66P02N8TC ZXM66P02N8.pdf
ZXM66P02N8TC
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 6.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2068 pF @ 15 V
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ZXMC3A16DN8TC ZXMC3A16DN8.pdf
ZXMC3A16DN8TC
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.9A/4.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.93 EUR
5000+0.89 EUR
Mindestbestellmenge: 2500
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ZXMC3A17DN8TA ZXMC3A17DN8.pdf
ZXMC3A17DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.1A/3.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.1A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 14756 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.53 EUR
11+1.60 EUR
100+1.07 EUR
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ZXMC3A17DN8TC ZXMC3A17DN8.pdf
ZXMC3A17DN8TC
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 8SOIC
Produkt ist nicht verfügbar
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ZXMC3A18DN8TA ZXMC3A18DN8.pdf
ZXMC3A18DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 8-SOIC
Produkt ist nicht verfügbar
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ZXMC4559DN8TA ZXMC4559DN8.pdf
ZXMC4559DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V, 1021pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 457 Stücke:
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Anzahl Preis
6+2.96 EUR
10+1.89 EUR
100+1.27 EUR
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ZXMC4A16DN8TA ZXMC4A16DN8.pdf
ZXMC4A16DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 40V 4A/3.6A 8SOIC
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ZXMC4A16DN8TC ZXMC4A16DN8.pdf
ZXMC4A16DN8TC
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 40V 4A/3.6A 8SOIC
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ZXMD63C02XTC ZXMD63C02X.pdf
ZXMD63C02XTC
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 8MSOP
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ZXMD63C03XTC ZXMD63C03X.pdf
ZXMD63C03XTC
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 8MSOP
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ZXMD63N02XTC ZXMD63N02X.pdf
ZXMD63N02XTC
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 2.5A 8MSOP
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ZXMD63N03XTC ZXMD63N03X.pdf
ZXMD63N03XTC
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 2.3A 8MSOP
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ZXMD63P02XTC ZXMD63P02X.pdf
ZXMD63P02XTC
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.04W
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-MSOP
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ZXMD63P03XTC ZXMD63P03X.pdf
ZXMD63P03XTC
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 8MSOP
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ZXMD65P02N8TC ZXMD65P02N8.pdf
ZXMD65P02N8TC
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4A 8SOIC
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ZXMHC3A01T8TA ZXMHC3A01T8.pdf
ZXMHC3A01T8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2N/2P-CH 30V 2.7A/2A SM8
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V, 204pF @ 15V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SM8
Part Status: Active
auf Bestellung 29000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.29 EUR
2000+1.20 EUR
3000+1.17 EUR
Mindestbestellmenge: 1000
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ZXMHN6A07T8TA ZXMHN6A07T8.pdf
ZXMHN6A07T8TA
Hersteller: Diodes Incorporated
Description: MOSFET 4N-CH 60V 1.4A SM8
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.4A
Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SM8
Produkt ist nicht verfügbar
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ZXMN10A07FTC ZXMN10A07F.pdf
ZXMN10A07FTC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 700MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V
Produkt ist nicht verfügbar
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ZXMN10A08DN8TC ZXMN10A08DN8.pdf
ZXMN10A08DN8TC
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 100V 1.6A 8SOIC
Produkt ist nicht verfügbar
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ZXMN10A08E6TC ZXMN10A08E6.pdf
ZXMN10A08E6TC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.5A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
Produkt ist nicht verfügbar
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ZXMN10A11GTC ZXMN10A11G.pdf
ZXMN10A11GTC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.7A SOT223
Produkt ist nicht verfügbar
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ZXMN10B08E6TC ZXMN10B08E6.pdf
ZXMN10B08E6TC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.6A SOT26
Produkt ist nicht verfügbar
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ZXMN2A01E6TC ZXMN2A01E6.pdf
ZXMN2A01E6TC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 2.5A SOT23-6
Produkt ist nicht verfügbar
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ZXMN2A01FTC ZXMN2A01F.pdf
ZXMN2A01FTC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1.9A SOT23-3
Produkt ist nicht verfügbar
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ZXMN2A02X8TC ZXMN2A02X8.pdf
ZXMN2A02X8TC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 6.2A 8-MSOP
Produkt ist nicht verfügbar
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ZXMN2A03E6TC ZXMN2A03E6.pdf
ZXMN2A03E6TC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.7A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 837 pF @ 10 V
Produkt ist nicht verfügbar
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ZXMN2A04DN8TC ZXMN2A04DN8.pdf
ZXMN2A04DN8TC
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.9A 8SOIC
Produkt ist nicht verfügbar
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ZXMN2AM832TA
ZXMN2AM832TA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 2.9A 8MLP
auf Bestellung 3401 Stücke:
Lieferzeit 10-14 Tag (e)
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ZXMN3A01E6TC ZXMN3A01E6.pdf
ZXMN3A01E6TC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 2.4A SOT23-6
Produkt ist nicht verfügbar
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ZXMN3A01FTC ZXMN3A01F.pdf
ZXMN3A01FTC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 1.8A SOT23-3
Produkt ist nicht verfügbar
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ZXMN3A02X8TC ZXMN3A02X8.pdf
ZXMN3A02X8TC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.3A 8MSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN3A03E6TC ZXMN3A03E6.pdf
ZXMN3A03E6TC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.7A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Produkt ist nicht verfügbar
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ZXMN3A04DN8TC ZXMN3A04DN8.pdf
ZXMN3A04DN8TC
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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ZXMN3A06DN8TC ZXMN3A06DN8.pdf
ZXMN3A06DN8TC
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 4.9A 8SOIC
Produkt ist nicht verfügbar
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ZXMN3A06N8TA
ZXMN3A06N8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 8SOIC
Produkt ist nicht verfügbar
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ZXMN3AM832TA ZXMN3AM832.pdf
ZXMN3AM832TA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 2.9A 8MLP
auf Bestellung 3169 Stücke:
Lieferzeit 10-14 Tag (e)
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ZXMN3B01FTA ZXMN3B01F.pdf
ZXMN3B01FTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 1.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.93 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 15 V
auf Bestellung 537000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.30 EUR
6000+0.28 EUR
9000+0.26 EUR
Mindestbestellmenge: 3000
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ZXMN3B04N8TC ZXMN3B04N8.pdf
ZXMN3B04N8TC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 7.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 15 V
Produkt ist nicht verfügbar
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ZXMN3B14FTA ZXMN3B14F.pdf
ZXMN3B14FTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 2.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.1A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 15 V
auf Bestellung 135000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.36 EUR
6000+0.34 EUR
9000+0.33 EUR
Mindestbestellmenge: 3000
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ZXMN6A07FTC ZXMN6A07F.pdf
ZXMN6A07FTC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V
Produkt ist nicht verfügbar
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ZXMN6A08E6TC
ZXMN6A08E6TC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 2.8A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Produkt ist nicht verfügbar
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ZXMN6A09DN8TC ZXMN6A09DN8_Rev5.pdf
ZXMN6A09DN8TC
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 4.3A 8SOIC
Produkt ist nicht verfügbar
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ZXMN6A11DN8TC ZXMN6A11DN8.pdf
ZXMN6A11DN8TC
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 2.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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ZXMN6A11GTC ZXMN6A11G.pdf
ZXMN6A11GTC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 3.1A SOT223
Produkt ist nicht verfügbar
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ZXMNS3BM832TA ZXMNS3BM832.pdf
ZXMNS3BM832TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 2A 8-MLP
Produkt ist nicht verfügbar
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ZXMP4A16KTC ZXMP4A16K.pdf
ZXMP4A16KTC
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 6.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 20 V
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.80 EUR
Mindestbestellmenge: 2500
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ZXMP6A18KTC ZXMP6A18K.pdf
ZXMP6A18KTC
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 6.8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 30 V
auf Bestellung 95000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.16 EUR
5000+1.15 EUR
7500+0.68 EUR
Mindestbestellmenge: 2500
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ZXRE1004CFTC ZXRE1004.pdf
ZXRE1004CFTC
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1.22V SOT23
Produkt ist nicht verfügbar
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ZXRE1004DFTC ZXRE1004.pdf
ZXRE1004DFTC
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1.22V SOT23
Produkt ist nicht verfügbar
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ZXRE1004DRSTOA ZXRE1004.pdf
ZXRE1004DRSTOA
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1.22V TO92-3
Produkt ist nicht verfügbar
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ZXRE1004DRSTOB ZXRE1004.pdf
ZXRE1004DRSTOB
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1.22V TO92-3
Produkt ist nicht verfügbar
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ZXRE1004DRSTZ ZXRE1004.pdf
ZXRE1004DRSTZ
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1% E-LINE
Produkt ist nicht verfügbar
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ZXRE1004EFTC ZXRE1004Rev2022.pdf
ZXRE1004EFTC
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 2% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 75ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.22V
Noise - 10Hz to 10kHz: 60µVrms
Current - Cathode: 8 µA
Current - Output: 20 mA
Produkt ist nicht verfügbar
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ZXRE1004ER ZXRE1004.pdf
ZXRE1004ER
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1.22V TO92-3
Produkt ist nicht verfügbar
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ZXRE1004ERSTOA ZXRE1004.pdf
ZXRE1004ERSTOA
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1.22V TO92-3
Produkt ist nicht verfügbar
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