Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74219) > Seite 139 nach 1237
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SD103BW-13-F | Diodes Incorporated |
Description: DIODE SCHOTTKY 30V 350MA SOD123Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 28pF @ 0V, 1MHz Current - Average Rectified (Io): 350mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 20 V |
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ZXMN10A08GTA | Diodes Incorporated |
Description: MOSFET N-CH 100V 2A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V |
auf Bestellung 107000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN10A25GTA | Diodes Incorporated |
Description: MOSFET N-CH 100V 2.9A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN10A25K | Diodes Incorporated |
Description: MOSFET N-CH 100V 4.2A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V Power Dissipation (Max): 2.11W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17.16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V |
Produkt ist nicht verfügbar |
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ZXMN6A25G | Diodes Incorporated |
Description: MOSFET N-CH 60V 4.8A SOT223 |
Produkt ist nicht verfügbar |
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ZXMN6A25K | Diodes Incorporated |
Description: MOSFET N-CH 60V 7A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V Power Dissipation (Max): 2.11W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V |
Produkt ist nicht verfügbar |
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ZXMP10A18K | Diodes Incorporated |
Description: MOSFET P-CH 100V 3.8A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V Power Dissipation (Max): 2.17W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V |
Produkt ist nicht verfügbar |
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ZXTN25012EFHTA | Diodes Incorporated |
Description: TRANS NPN 12V 6A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 190mV @ 120mA, 6A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V Frequency - Transition: 260MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 1.25 W |
auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTN25020CFH | Diodes Incorporated |
Description: TRANS NPN 20V 4.5A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 140mV @ 450mA, 4.5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V Frequency - Transition: 185MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 4.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.25 W |
Produkt ist nicht verfügbar |
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ZXTN25040DFLTA | Diodes Incorporated |
Description: TRANS NPN 40V 1.5A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 285mV @ 400mA, 4A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Frequency - Transition: 190MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 350 mW |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTN25100DFHTA | Diodes Incorporated |
Description: TRANS NPN 100V 2.5A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 330mV @ 250mA, 2.5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Frequency - Transition: 175MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.25 W |
auf Bestellung 1269000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTP25015DFH | Diodes Incorporated |
Description: TRANS PNP 15V 4A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Frequency - Transition: 295MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 1.25 W |
Produkt ist nicht verfügbar |
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ZXTP25020CFHTA | Diodes Incorporated |
Description: TRANS PNP 20V 4A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 4A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V Frequency - Transition: 285MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.25 W |
auf Bestellung 636000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN10A08GTA | Diodes Incorporated |
Description: MOSFET N-CH 100V 2A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V |
auf Bestellung 108013 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN10A25GTA | Diodes Incorporated |
Description: MOSFET N-CH 100V 2.9A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V |
auf Bestellung 20480 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN10A25K | Diodes Incorporated |
Description: MOSFET N-CH 100V 4.2A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V Power Dissipation (Max): 2.11W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17.16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V |
Produkt ist nicht verfügbar |
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ZXMN6A25G | Diodes Incorporated |
Description: MOSFET N-CH 60V 4.8A SOT223 |
Produkt ist nicht verfügbar |
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ZXMN6A25K | Diodes Incorporated |
Description: MOSFET N-CH 60V 7A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V Power Dissipation (Max): 2.11W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V |
Produkt ist nicht verfügbar |
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ZXMP10A18K | Diodes Incorporated |
Description: MOSFET P-CH 100V 3.8A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V Power Dissipation (Max): 2.17W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V |
Produkt ist nicht verfügbar |
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ZXTN25012EFHTA | Diodes Incorporated |
Description: TRANS NPN 12V 6A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 190mV @ 120mA, 6A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V Frequency - Transition: 260MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 1.25 W |
auf Bestellung 35217 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTN25020CFH | Diodes Incorporated |
Description: TRANS NPN 20V 4.5A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 140mV @ 450mA, 4.5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V Frequency - Transition: 185MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 4.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.25 W |
Produkt ist nicht verfügbar |
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ZXTN25040DFLTA | Diodes Incorporated |
Description: TRANS NPN 40V 1.5A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 285mV @ 400mA, 4A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Frequency - Transition: 190MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 350 mW |
auf Bestellung 19305 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTN25100DFHTA | Diodes Incorporated |
Description: TRANS NPN 100V 2.5A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 330mV @ 250mA, 2.5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Frequency - Transition: 175MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.25 W |
auf Bestellung 1269758 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTP25015DFH | Diodes Incorporated |
Description: TRANS PNP 15V 4A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Frequency - Transition: 295MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 1.25 W |
Produkt ist nicht verfügbar |
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ZXTP25020CFHTA | Diodes Incorporated |
Description: TRANS PNP 20V 4A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 4A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V Frequency - Transition: 285MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.25 W |
auf Bestellung 637948 Stücke: Lieferzeit 10-14 Tag (e) |
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ZLLS350TA | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 380MA SOD523Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 ns Technology: Schottky Capacitance @ Vr, F: 6pF @ 30V, 1MHz Current - Average Rectified (Io): 380mA Supplier Device Package: SOD-523 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 275 mA Current - Reverse Leakage @ Vr: 4 µA @ 30 V |
auf Bestellung 31414 Stücke: Lieferzeit 10-14 Tag (e) |
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ZHCS350TA | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 350MA SOD523Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.6 ns Technology: Schottky Capacitance @ Vr, F: 6pF @ 25V, 1MHz Current - Average Rectified (Io): 350mA Supplier Device Package: SOD-523 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 350 mA Current - Reverse Leakage @ Vr: 12 µA @ 30 V |
auf Bestellung 523212 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP4A16KTC | Diodes Incorporated |
Description: MOSFET P-CH 40V 6.6A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V Power Dissipation (Max): 2.15W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 20 V |
auf Bestellung 33590 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP6A18KTC | Diodes Incorporated |
Description: MOSFET P-CH 60V 6.8A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V Power Dissipation (Max): 2.15W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 30 V |
auf Bestellung 2399 Stücke: Lieferzeit 10-14 Tag (e) |
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BC847BW-7-F | Diodes Incorporated |
Description: TRANS NPN 45V 0.1A SOT-323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW |
auf Bestellung 315000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX84C10T-7-F | Diodes Incorporated |
Description: DIODE ZENER 10V 150MW SOT523Tolerance: ±6% Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOT-523 Part Status: Active Power - Max: 150 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 200 nA @ 7 V |
auf Bestellung 42000 Stücke: Lieferzeit 10-14 Tag (e) |
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DCX124EK-7-F | Diodes Incorporated |
Description: TRANS PREBIAS 1NPN 1PNP SC-74RPackaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-74R |
auf Bestellung 315000 Stücke: Lieferzeit 10-14 Tag (e) |
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DCX143EU-7-F | Diodes Incorporated |
Description: TRANS PREBIAS NPN/PNP SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V / 40 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 1305000 Stücke: Lieferzeit 10-14 Tag (e) |
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DCX4710H-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN/PNP SOT563 |
auf Bestellung 57000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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DLP3V3DTZ-7 | Diodes Incorporated |
Description: TVS DIODE 3.3VWM SOT23-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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LMN400E01-7 | Diodes Incorporated |
Description: MCU LOAD SWITCH 400MA SOT-363Packaging: Tape & Reel (TR) Voltage - Rated: 50V PNP, 60V N-Channel Package / Case: 6-TSSOP, SC-88, SOT-363 Current Rating (Amps): 400mA PNP, 115mA Mounting Type: Surface Mount Transistor Type: PNP Pre-Biased, N-Channel Pre-Biased Applications: Load Switch Supplier Device Package: SOT-363 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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PDU340-13 | Diodes Incorporated |
Description: DIODE STANDARD 400V 3A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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PDU420-13 | Diodes Incorporated |
Description: DIODE GEN PURP 200V 4A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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PDU540-13 | Diodes Incorporated |
Description: DIODE STANDARD 400V 5A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.185 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 160000 Stücke: Lieferzeit 10-14 Tag (e) |
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PDU620-13 | Diodes Incorporated |
Description: DIODE STANDARD 200V 6A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC847BW-7-F | Diodes Incorporated |
Description: TRANS NPN 45V 0.1A SOT-323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW |
auf Bestellung 317850 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX84C10T-7-F | Diodes Incorporated |
Description: DIODE ZENER 10V 150MW SOT523Tolerance: ±6% Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOT-523 Part Status: Active Power - Max: 150 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 200 nA @ 7 V |
auf Bestellung 46940 Stücke: Lieferzeit 10-14 Tag (e) |
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DCX124EK-7-F | Diodes Incorporated |
Description: TRANS PREBIAS 1NPN 1PNP SC-74RPackaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-74R |
auf Bestellung 325529 Stücke: Lieferzeit 10-14 Tag (e) |
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DCX143EU-7-F | Diodes Incorporated |
Description: TRANS PREBIAS NPN/PNP SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V / 40 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 1311154 Stücke: Lieferzeit 10-14 Tag (e) |
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DCX4710H-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN/PNP SOT563 |
auf Bestellung 195057000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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DLP3V3DTZ-7 | Diodes Incorporated |
Description: TVS DIODE 3.3VWM SOT23-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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PDU340-13 | Diodes Incorporated |
Description: DIODE STANDARD 400V 3A POWERDI5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 7961 Stücke: Lieferzeit 10-14 Tag (e) |
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PDU420-13 | Diodes Incorporated |
Description: DIODE GEN PURP 200V 4A POWERDI5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 48955 Stücke: Lieferzeit 10-14 Tag (e) |
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PDU540-13 | Diodes Incorporated |
Description: DIODE STANDARD 400V 5A POWERDI5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.185 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 160756 Stücke: Lieferzeit 10-14 Tag (e) |
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PDU620-13 | Diodes Incorporated |
Description: DIODE STANDARD 200V 6A POWERDI5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 5352 Stücke: Lieferzeit 10-14 Tag (e) |
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DCX4710H-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN/PNP SOT563 |
auf Bestellung 195057000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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DLP3V3DTZ-7 | Diodes Incorporated |
Description: TVS DIODE 3.3VWM SOT23-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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PI2PCIE412-DZHE | Diodes Incorporated |
Description: IC MUX/DEMUX QUAD 8:16 42TQFNPackaging: Tube Package / Case: 42-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: PCI Express® -3db Bandwidth: 1.4GHz Supplier Device Package: 42-TQFN (9x3.5) Voltage - Supply, Single (V+): 1.5V ~ 2V Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Obsolete Number of Channels: 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PI3A4626ZCEX | Diodes Incorporated |
Description: IC SW SPST-NOX1 400MOHM 6TDFNPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 400mOhm Supplier Device Package: 6-TDFN (2.3x2) Voltage - Supply, Single (V+): 1.5V ~ 3.6V Charge Injection: 50pC Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 50mOhm (Max) Switch Time (Ton, Toff) (Max): 10ns, 10ns Channel Capacitance (CS(off), CD(off)): 130pF, 130pF Current - Leakage (IS(off)) (Max): 1nA Number of Circuits: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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PI3B16209AE | Diodes Incorporated |
Description: IC BUS FET EXCH SW 9X2:2 48TSSOP Packaging: Tube Package / Case: 48-TFSOP (0.240", 6.10mm Width) Mounting Type: Surface Mount Circuit: 9 x 2:2 Type: Bus FET Exchange Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 48-TSSOP Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PI3B16211KE | Diodes Incorporated |
Description: IC BUS SWITCH 12 X 1:1 56TVSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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PI3B16226BE | Diodes Incorporated |
Description: IC 12:24BIT MUX/DEMUX SW 40BQSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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PI3B3126LE | Diodes Incorporated |
Description: IC BUS SWITCH 1 X 1:1 14TSSOPPackaging: Tube Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 1 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Independent Circuits: 4 Voltage Supply Source: Single Supply Supplier Device Package: 14-TSSOP |
auf Bestellung 1062 Stücke: Lieferzeit 10-14 Tag (e) |
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PI3B32160AE | Diodes Incorporated |
Description: IC DEMULTIPLEX 16 X 1:2 56TSSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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PI3B3245LE | Diodes Incorporated |
Description: IC 8-BIT BUS SW 2-PORT 20-TSSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SD103BW-13-F |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 350MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 28pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
Description: DIODE SCHOTTKY 30V 350MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 28pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXMN10A08GTA |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
Description: MOSFET N-CH 100V 2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
auf Bestellung 107000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.49 EUR |
| 2000+ | 0.45 EUR |
| 3000+ | 0.43 EUR |
| 5000+ | 0.41 EUR |
| ZXMN10A25GTA |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.9A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V
Description: MOSFET N-CH 100V 2.9A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.85 EUR |
| 2000+ | 0.8 EUR |
| 5000+ | 0.76 EUR |
| 10000+ | 0.73 EUR |
| ZXMN10A25K |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 4.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V
Description: MOSFET N-CH 100V 4.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXMN6A25G |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 4.8A SOT223
Description: MOSFET N-CH 60V 4.8A SOT223
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXMN6A25K |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V
Description: MOSFET N-CH 60V 7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXMP10A18K |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 3.8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.17W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
Description: MOSFET P-CH 100V 3.8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.17W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXTN25012EFHTA |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 12V 6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 120mA, 6A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 260MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 1.25 W
Description: TRANS NPN 12V 6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 120mA, 6A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 260MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 1.25 W
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.37 EUR |
| 6000+ | 0.34 EUR |
| 9000+ | 0.33 EUR |
| 15000+ | 0.31 EUR |
| 21000+ | 0.3 EUR |
| ZXTN25020CFH |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 20V 4.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 450mA, 4.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 185MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.25 W
Description: TRANS NPN 20V 4.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 450mA, 4.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 185MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.25 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXTN25040DFLTA |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 1.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 285mV @ 400mA, 4A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 190MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
Description: TRANS NPN 40V 1.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 285mV @ 400mA, 4A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 190MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.24 EUR |
| 6000+ | 0.22 EUR |
| 9000+ | 0.21 EUR |
| ZXTN25100DFHTA |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 2.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
Description: TRANS NPN 100V 2.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
auf Bestellung 1269000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.35 EUR |
| 6000+ | 0.32 EUR |
| 9000+ | 0.31 EUR |
| 15000+ | 0.29 EUR |
| 21000+ | 0.28 EUR |
| ZXTP25015DFH |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 15V 4A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 295MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 1.25 W
Description: TRANS PNP 15V 4A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 295MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 1.25 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXTP25020CFHTA |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 4A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 4A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 285MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.25 W
Description: TRANS PNP 20V 4A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 4A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 285MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.25 W
auf Bestellung 636000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.35 EUR |
| 6000+ | 0.32 EUR |
| 9000+ | 0.31 EUR |
| 15000+ | 0.29 EUR |
| ZXMN10A08GTA |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
Description: MOSFET N-CH 100V 2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
auf Bestellung 108013 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.88 EUR |
| 15+ | 1.18 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.6 EUR |
| ZXMN10A25GTA |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.9A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V
Description: MOSFET N-CH 100V 2.9A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V
auf Bestellung 20480 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.94 EUR |
| 12+ | 1.59 EUR |
| 100+ | 1.23 EUR |
| 500+ | 1.05 EUR |
| ZXMN10A25K |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 4.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V
Description: MOSFET N-CH 100V 4.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXMN6A25G |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 4.8A SOT223
Description: MOSFET N-CH 60V 4.8A SOT223
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXMN6A25K |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V
Description: MOSFET N-CH 60V 7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXMP10A18K |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 3.8A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.17W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
Description: MOSFET P-CH 100V 3.8A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.17W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXTN25012EFHTA |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 12V 6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 120mA, 6A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 260MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 1.25 W
Description: TRANS NPN 12V 6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 120mA, 6A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 260MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 1.25 W
auf Bestellung 35217 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.51 EUR |
| 19+ | 0.95 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.43 EUR |
| ZXTN25020CFH |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 20V 4.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 450mA, 4.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 185MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.25 W
Description: TRANS NPN 20V 4.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 450mA, 4.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 185MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.25 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXTN25040DFLTA |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 1.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 285mV @ 400mA, 4A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 190MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
Description: TRANS NPN 40V 1.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 285mV @ 400mA, 4A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 190MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
auf Bestellung 19305 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.06 EUR |
| 28+ | 0.65 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.28 EUR |
| ZXTN25100DFHTA |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 2.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
Description: TRANS NPN 100V 2.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
auf Bestellung 1269758 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.43 EUR |
| 20+ | 0.9 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.41 EUR |
| ZXTP25015DFH |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 15V 4A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 295MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 1.25 W
Description: TRANS PNP 15V 4A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 295MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 1.25 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXTP25020CFHTA |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 4A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 4A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 285MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.25 W
Description: TRANS PNP 20V 4A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 4A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 285MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.25 W
auf Bestellung 637948 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.44 EUR |
| 20+ | 0.9 EUR |
| 100+ | 0.59 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.41 EUR |
| ZLLS350TA |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 380MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 30V, 1MHz
Current - Average Rectified (Io): 380mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 275 mA
Current - Reverse Leakage @ Vr: 4 µA @ 30 V
Description: DIODE SCHOTTKY 40V 380MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 30V, 1MHz
Current - Average Rectified (Io): 380mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 275 mA
Current - Reverse Leakage @ Vr: 4 µA @ 30 V
auf Bestellung 31414 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 0.79 EUR |
| 35+ | 0.52 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.28 EUR |
| ZHCS350TA |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 350MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.6 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 25V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 350 mA
Current - Reverse Leakage @ Vr: 12 µA @ 30 V
Description: DIODE SCHOTTKY 40V 350MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.6 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 25V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 350 mA
Current - Reverse Leakage @ Vr: 12 µA @ 30 V
auf Bestellung 523212 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.07 EUR |
| 27+ | 0.67 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.29 EUR |
| ZXMP4A16KTC |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 6.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 20 V
Description: MOSFET P-CH 40V 6.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 20 V
auf Bestellung 33590 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.94 EUR |
| 100+ | 0.91 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.87 EUR |
| ZXMP6A18KTC |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 6.8A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 30 V
Description: MOSFET P-CH 60V 6.8A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 30 V
auf Bestellung 2399 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.65 EUR |
| 14+ | 1.31 EUR |
| 100+ | 1.09 EUR |
| 500+ | 1.04 EUR |
| BC847BW-7-F |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.1A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Description: TRANS NPN 45V 0.1A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 315000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.052 EUR |
| 6000+ | 0.046 EUR |
| 9000+ | 0.043 EUR |
| 15000+ | 0.04 EUR |
| 21000+ | 0.038 EUR |
| 30000+ | 0.036 EUR |
| 75000+ | 0.032 EUR |
| 150000+ | 0.03 EUR |
| 300000+ | 0.028 EUR |
| BZX84C10T-7-F |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 10V 150MW SOT523
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-523
Part Status: Active
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Description: DIODE ZENER 10V 150MW SOT523
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-523
Part Status: Active
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.068 EUR |
| 6000+ | 0.063 EUR |
| 9000+ | 0.06 EUR |
| DCX124EK-7-F |
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Hersteller: Diodes Incorporated
Description: TRANS PREBIAS 1NPN 1PNP SC-74R
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-74R
Description: TRANS PREBIAS 1NPN 1PNP SC-74R
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-74R
auf Bestellung 315000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.098 EUR |
| 6000+ | 0.088 EUR |
| 9000+ | 0.083 EUR |
| 15000+ | 0.078 EUR |
| 21000+ | 0.075 EUR |
| 30000+ | 0.072 EUR |
| DCX143EU-7-F |
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Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V / 40 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-363
Part Status: Active
Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V / 40 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 1305000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.077 EUR |
| 6000+ | 0.069 EUR |
| 9000+ | 0.065 EUR |
| 15000+ | 0.06 EUR |
| 21000+ | 0.058 EUR |
| 30000+ | 0.055 EUR |
| DCX4710H-7 |
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Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN/PNP SOT563
Description: TRANS PREBIAS NPN/PNP SOT563
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| DLP3V3DTZ-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM SOT23-3
Description: TVS DIODE 3.3VWM SOT23-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LMN400E01-7 |
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Hersteller: Diodes Incorporated
Description: MCU LOAD SWITCH 400MA SOT-363
Packaging: Tape & Reel (TR)
Voltage - Rated: 50V PNP, 60V N-Channel
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 400mA PNP, 115mA
Mounting Type: Surface Mount
Transistor Type: PNP Pre-Biased, N-Channel Pre-Biased
Applications: Load Switch
Supplier Device Package: SOT-363
Description: MCU LOAD SWITCH 400MA SOT-363
Packaging: Tape & Reel (TR)
Voltage - Rated: 50V PNP, 60V N-Channel
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 400mA PNP, 115mA
Mounting Type: Surface Mount
Transistor Type: PNP Pre-Biased, N-Channel Pre-Biased
Applications: Load Switch
Supplier Device Package: SOT-363
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PDU340-13 |
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Hersteller: Diodes Incorporated
Description: DIODE STANDARD 400V 3A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 3A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.68 EUR |
| PDU420-13 |
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Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 200V 4A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 4A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.56 EUR |
| 10000+ | 0.53 EUR |
| PDU540-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 400V 5A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.185 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 5A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.185 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 160000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.77 EUR |
| PDU620-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 200V 6A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 6A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.9 EUR |
| BC847BW-7-F |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.1A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Description: TRANS NPN 45V 0.1A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 317850 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 0.26 EUR |
| 109+ | 0.16 EUR |
| 178+ | 0.099 EUR |
| 500+ | 0.072 EUR |
| 1000+ | 0.063 EUR |
| BZX84C10T-7-F |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 10V 150MW SOT523
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-523
Part Status: Active
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Description: DIODE ZENER 10V 150MW SOT523
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-523
Part Status: Active
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
auf Bestellung 46940 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 0.28 EUR |
| 99+ | 0.18 EUR |
| 179+ | 0.099 EUR |
| 500+ | 0.097 EUR |
| 1000+ | 0.096 EUR |
| DCX124EK-7-F |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS 1NPN 1PNP SC-74R
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-74R
Description: TRANS PREBIAS 1NPN 1PNP SC-74R
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-74R
auf Bestellung 325529 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 0.55 EUR |
| 53+ | 0.33 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| DCX143EU-7-F |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V / 40 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-363
Part Status: Active
Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V / 40 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 1311154 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 0.48 EUR |
| 63+ | 0.28 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| DCX4710H-7 |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN/PNP SOT563
Description: TRANS PREBIAS NPN/PNP SOT563
auf Bestellung 195057000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| DLP3V3DTZ-7 |
![]() |
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM SOT23-3
Description: TVS DIODE 3.3VWM SOT23-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PDU340-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 400V 3A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 3A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 7961 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.57 EUR |
| 14+ | 1.26 EUR |
| 100+ | 1.03 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.72 EUR |
| 2000+ | 0.68 EUR |
| PDU420-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 200V 4A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 4A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 48955 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.41 EUR |
| 16+ | 1.16 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.62 EUR |
| 2000+ | 0.59 EUR |
| PDU540-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 400V 5A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.185 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 5A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.185 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 160756 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.9 EUR |
| 21+ | 0.84 EUR |
| 100+ | 0.83 EUR |
| PDU620-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 200V 6A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 6A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 5352 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.27 EUR |
| 11+ | 1.67 EUR |
| 100+ | 1.27 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.98 EUR |
| DCX4710H-7 |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN/PNP SOT563
Description: TRANS PREBIAS NPN/PNP SOT563
auf Bestellung 195057000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| DLP3V3DTZ-7 |
![]() |
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM SOT23-3
Description: TVS DIODE 3.3VWM SOT23-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PI2PCIE412-DZHE |
![]() |
Hersteller: Diodes Incorporated
Description: IC MUX/DEMUX QUAD 8:16 42TQFN
Packaging: Tube
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: PCI Express®
-3db Bandwidth: 1.4GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 1.5V ~ 2V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 4
Description: IC MUX/DEMUX QUAD 8:16 42TQFN
Packaging: Tube
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: PCI Express®
-3db Bandwidth: 1.4GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 1.5V ~ 2V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PI3A4626ZCEX |
![]() |
Hersteller: Diodes Incorporated
Description: IC SW SPST-NOX1 400MOHM 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 400mOhm
Supplier Device Package: 6-TDFN (2.3x2)
Voltage - Supply, Single (V+): 1.5V ~ 3.6V
Charge Injection: 50pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 10ns, 10ns
Channel Capacitance (CS(off), CD(off)): 130pF, 130pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
Description: IC SW SPST-NOX1 400MOHM 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 400mOhm
Supplier Device Package: 6-TDFN (2.3x2)
Voltage - Supply, Single (V+): 1.5V ~ 3.6V
Charge Injection: 50pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 10ns, 10ns
Channel Capacitance (CS(off), CD(off)): 130pF, 130pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PI3B16209AE |
Hersteller: Diodes Incorporated
Description: IC BUS FET EXCH SW 9X2:2 48TSSOP
Packaging: Tube
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Circuit: 9 x 2:2
Type: Bus FET Exchange Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 48-TSSOP
Part Status: Obsolete
Description: IC BUS FET EXCH SW 9X2:2 48TSSOP
Packaging: Tube
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Circuit: 9 x 2:2
Type: Bus FET Exchange Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 48-TSSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PI3B16211KE |
![]() |
Hersteller: Diodes Incorporated
Description: IC BUS SWITCH 12 X 1:1 56TVSOP
Description: IC BUS SWITCH 12 X 1:1 56TVSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PI3B16226BE |
![]() |
Hersteller: Diodes Incorporated
Description: IC 12:24BIT MUX/DEMUX SW 40BQSOP
Description: IC 12:24BIT MUX/DEMUX SW 40BQSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PI3B3126LE |
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Hersteller: Diodes Incorporated
Description: IC BUS SWITCH 1 X 1:1 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Independent Circuits: 4
Voltage Supply Source: Single Supply
Supplier Device Package: 14-TSSOP
Description: IC BUS SWITCH 1 X 1:1 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Independent Circuits: 4
Voltage Supply Source: Single Supply
Supplier Device Package: 14-TSSOP
auf Bestellung 1062 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.72 EUR |
| 17+ | 1.05 EUR |
| 96+ | 0.67 EUR |
| 192+ | 0.59 EUR |
| 288+ | 0.55 EUR |
| 576+ | 0.5 EUR |
| 1056+ | 0.45 EUR |
| PI3B32160AE |
![]() |
Hersteller: Diodes Incorporated
Description: IC DEMULTIPLEX 16 X 1:2 56TSSOP
Description: IC DEMULTIPLEX 16 X 1:2 56TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PI3B3245LE |
![]() |
Hersteller: Diodes Incorporated
Description: IC 8-BIT BUS SW 2-PORT 20-TSSOP
Description: IC 8-BIT BUS SW 2-PORT 20-TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
















