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74AUP2G06FW4-7 74AUP2G06FW4-7 Diodes Incorporated 74AUP2G06.pdf Description: IC INVERTER 2CH 2-INP DFN1010-6
Current - Quiescent (Max): 500 nA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 10.6ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.9V
Supplier Device Package: X2-DFN1010-6
Number of Inputs: 2
Current - Output High, Low: -, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Features: Open Drain
Packaging: Cut Tape (CT)
Input Logic Level - High: 1.6V ~ 2V
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74AUP2G06FZ4-7 74AUP2G06FZ4-7 Diodes Incorporated 74AUP2G06.pdf Description: IC INVERT OD 2CH 2-INP DFN1410-6
Number of Circuits: 2
Part Status: Active
Max Propagation Delay @ V, Max CL: 10.6ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.9V
Input Logic Level - High: 1.6V ~ 2V
Supplier Device Package: X2-DFN1410-6
Number of Inputs: 2
Current - Output High, Low: -, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Current - Quiescent (Max): 500 nA
Package / Case: 6-XFDFN
Features: Open Drain
Packaging: Cut Tape (CT)
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74AUP2G06FZ4-7 74AUP2G06FZ4-7 Diodes Incorporated 74AUP2G06.pdf Description: IC INVERT OD 2CH 2-INP DFN1410-6
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Features: Open Drain
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 500 nA
Number of Circuits: 2
Part Status: Active
Max Propagation Delay @ V, Max CL: 10.6ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.9V
Input Logic Level - High: 1.6V ~ 2V
Supplier Device Package: X2-DFN1410-6
Number of Inputs: 2
Current - Output High, Low: -, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
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74AUP2G07FW3-7 74AUP2G07FW3-7 Diodes Incorporated 74AUP2G07.pdf Description: IC BUFFER NON-INVERT 3.6V 6DFN
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74AUP2G07FW4-7 74AUP2G07FW4-7 Diodes Incorporated 74AUP2G07.pdf Description: IC BUFFER NON-INVERT 3.6V 6DFN
Supplier Device Package: X2-DFN1010-6
Current - Output High, Low: -, 4mA
Number of Bits per Element: 1
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
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74AUP2G07FW4-7 74AUP2G07FW4-7 Diodes Incorporated 74AUP2G07.pdf Description: IC BUFFER NON-INVERT 3.6V 6DFN
Supplier Device Package: X2-DFN1010-6
Current - Output High, Low: -, 4mA
Number of Bits per Element: 1
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
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74AUP2G07FZ4-7 74AUP2G07FZ4-7 Diodes Incorporated 74AUP2G07.pdf Description: IC BUFFER NON-INVERT 3.6V 6DFN
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74AUP2G07FZ4-7 74AUP2G07FZ4-7 Diodes Incorporated 74AUP2G07.pdf Description: IC BUFFER NON-INVERT 3.6V 6DFN
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74AUP2G14FW3-7 74AUP2G14FW3-7 Diodes Incorporated 74AUP2G14.pdf Description: IC INVERTER 2CH 2-INP DFN0910-6
Current - Quiescent (Max): 500 nA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Input Logic Level - Low: 0.1V ~ 0.88V
Input Logic Level - High: 0.6V ~ 2.29V
Supplier Device Package: X2-DFN0910-6
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
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74AUP2G14FZ4-7 74AUP2G14FZ4-7 Diodes Incorporated 74AUP2G14.pdf Description: IC INVERTER 2CH 2-INP DFN1410-6
Current - Quiescent (Max): 500 nA
Number of Circuits: 2
Part Status: Active
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Input Logic Level - Low: 0.1V ~ 0.88V
Input Logic Level - High: 0.6V ~ 2.29V
Supplier Device Package: X2-DFN1410-6
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
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74AUP2G14FZ4-7 74AUP2G14FZ4-7 Diodes Incorporated 74AUP2G14.pdf Description: IC INVERTER 2CH 2-INP DFN1410-6
Current - Quiescent (Max): 500 nA
Number of Circuits: 2
Part Status: Active
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Input Logic Level - Low: 0.1V ~ 0.88V
Input Logic Level - High: 0.6V ~ 2.29V
Supplier Device Package: X2-DFN1410-6
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
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74AUP2G17FW3-7 74AUP2G17FW3-7 Diodes Incorporated 74AUP2G17.pdf Description: IC BUFFER NON-INVERT 3.6V 6DFN
Input Type: Schmitt Trigger
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: X2-DFN0910-6
Current - Output High, Low: 4mA, 4mA
Number of Bits per Element: 1
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74AUP2G17FW4-7 74AUP2G17FW4-7 Diodes Incorporated 74AUP2G17.pdf Description: IC BUFFER NON-INVERT 3.6V 6DFN
Output Type: Push-Pull
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: X2-DFN1010-6
Current - Output High, Low: 4mA, 4mA
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
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74AUP2G34FW4-7 74AUP2G34FW4-7 Diodes Incorporated 74AUP2G34.pdf Description: IC BUFF/DVR DUAL LP 6DFN
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74AUP2G34FW4-7 74AUP2G34FW4-7 Diodes Incorporated 74AUP2G34.pdf Description: IC BUFF/DVR DUAL LP 6DFN
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74AUP2G34FW4-7 74AUP2G34FW4-7 Diodes Incorporated 74AUP2G34.pdf Description: IC BUFF/DVR DUAL LP 6DFN
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74AUP2G34FZ4-7 74AUP2G34FZ4-7 Diodes Incorporated 74AUP2G34.pdf Description: IC BUFF NON-INVERT 3.6V 6DFN
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74AUP2G34FZ4-7 74AUP2G34FZ4-7 Diodes Incorporated 74AUP2G34.pdf Description: IC BUFF NON-INVERT 3.6V 6DFN
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D12V0H1U2WS-7 D12V0H1U2WS-7 Diodes Incorporated D12V0H1U2WS.pdf Description: TVS DIODE 12VWM 24VC SOD323
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 24V
Voltage - Breakdown (Min): 13.3V
Unidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 12V (Max)
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
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D12V0H1U2WS-7 D12V0H1U2WS-7 Diodes Incorporated D12V0H1U2WS.pdf Description: TVS DIODE 12VWM 24VC SOD323
Qualification: AEC-Q101
Grade: Automotive
Voltage - Breakdown (Min): 13.3V
Unidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 12V (Max)
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 24V
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D24V0L1B2LPS-7B D24V0L1B2LPS-7B Diodes Incorporated D24V0L1B2LPS.pdf Description: TVS DIODE 24VWM 46V X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 90W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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D24V0L1B2LPS-7B D24V0L1B2LPS-7B Diodes Incorporated D24V0L1B2LPS.pdf Description: TVS DIODE 24VWM 46V X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 90W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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D5V0F4U5P5-7 D5V0F4U5P5-7 Diodes Incorporated D5V0F4U5P5.pdf Description: TVS DIODE 5.5VWM 12.5VC SOT953
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 12.5V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 4
Supplier Device Package: SOT-953
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 0.5pF @ 1MHz
Applications: HDMI, USB
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Cut Tape (CT)
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DMG3402L-7 DMG3402L-7 Diodes Incorporated DMG3402L.pdf Description: MOSFET N-CH 30V 4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V
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DMG3402L-7 DMG3402L-7 Diodes Incorporated DMG3402L.pdf Description: MOSFET N-CH 30V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V
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15000+0.17 EUR
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DMN10H120SFG-7 DMN10H120SFG-7 Diodes Incorporated DMN10H120SFG.pdf Description: MOSFET N-CH 100V 3.8A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
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DMN10H120SFG-7 DMN10H120SFG-7 Diodes Incorporated DMN10H120SFG.pdf Description: MOSFET N-CH 100V 3.8A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
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4000+0.48 EUR
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10000+0.43 EUR
14000+0.42 EUR
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DMN10H220LE-13 DMN10H220LE-13 Diodes Incorporated DMN10H220LE.pdf Description: MOSFET N-CH 100V 2.3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
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DMN10H220LE-13 DMN10H220LE-13 Diodes Incorporated DMN10H220LE.pdf Description: MOSFET N-CH 100V 2.3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
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DMN3032LE-13 DMN3032LE-13 Diodes Incorporated DMN3032LE.pdf Description: MOSFET N-CH 30V 5.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 15 V
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DMN3032LE-13 DMN3032LE-13 Diodes Incorporated DMN3032LE.pdf Description: MOSFET N-CH 30V 5.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 15 V
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DMP6250SE-13 DMP6250SE-13 Diodes Incorporated DMP6250SE.pdf Description: MOSFET P-CH 60V 2.1A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 14W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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DMP6250SE-13 DMP6250SE-13 Diodes Incorporated DMP6250SE.pdf Description: MOSFET P-CH 60V 2.1A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 14W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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DT1452-02SO-7 DT1452-02SO-7 Diodes Incorporated DT1452-02SO.pdf Description: TVS DIODE 5.5VWM 11VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 1.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 11V
Power Line Protection: Yes
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DT1452-02SO-7 DT1452-02SO-7 Diodes Incorporated DT1452-02SO.pdf Description: TVS DIODE 5.5VWM 11VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 1.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 11V
Power Line Protection: Yes
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DXT696BK-13 DXT696BK-13 Diodes Incorporated DXT696BK.pdf Description: TRANS NPN 180V 0.5A TO-252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 200mA, 5V
Frequency - Transition: 70MHz
Supplier Device Package: TO-252-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 3.9 W
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DXT696BK-13 DXT696BK-13 Diodes Incorporated DXT696BK.pdf Description: TRANS NPN 180V 0.5A TO-252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 200mA, 5V
Frequency - Transition: 70MHz
Supplier Device Package: TO-252-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 3.9 W
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GDZ3V9LP3-7 GDZ3V9LP3-7 Diodes Incorporated GDZxVxLP3.pdf Description: DIODE ZENER 3.9V 250MW 2DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
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GDZ3V9LP3-7 GDZ3V9LP3-7 Diodes Incorporated GDZxVxLP3.pdf Description: DIODE ZENER 3.9V 250MW 2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
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GDZ4V7LP3-7 GDZ4V7LP3-7 Diodes Incorporated GDZxVxLP3.pdf Description: DIODE ZENER 4.7V 250MW 2DFN
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GDZ4V7LP3-7 GDZ4V7LP3-7 Diodes Incorporated GDZxVxLP3.pdf Description: DIODE ZENER 4.7V 250MW 2DFN
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MBRF10150CT-LJ MBRF10150CT-LJ Diodes Incorporated MBR%28F%2910150CT.pdf Description: DIODE ARR SCHOT 150V 5A ITO220AB
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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MBRF1060CT-JT MBRF1060CT-JT Diodes Incorporated MBRF1030_60CT.pdf Description: DIODE ARR SCHOTT 60V 5A ITO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar
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MBRF20200CT-LJ MBRF20200CT-LJ Diodes Incorporated MBR%28F%2920200CT_20A.pdf Description: DIODE ARR SCHOTTKY 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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MBRF2045CT-LJ MBRF2045CT-LJ Diodes Incorporated MBR%28F%292045CT-2060CT.pdf Description: DIODE ARR SCHOT 45V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
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MBRF2060CT-LJ MBRF2060CT-LJ Diodes Incorporated MBR%28F%292045CT-2060CT.pdf Description: DIODE ARR SCHOT 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRF3045CT-LJ MBRF3045CT-LJ Diodes Incorporated MBR%28F%293045CT.pdf Description: DIODE ARR SCHOT 45V 15A ITO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar
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SBR05U40CSP-7 SBR05U40CSP-7 Diodes Incorporated SBR05U40CSP.pdf Description: DIODE SBR 40V 500MA WLB1006
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SBR05U40CSP-7 SBR05U40CSP-7 Diodes Incorporated SBR05U40CSP.pdf Description: DIODE SBR 40V 500MA WLB1006
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SBR05U40CSP-7 SBR05U40CSP-7 Diodes Incorporated SBR05U40CSP.pdf Description: DIODE SBR 40V 500MA WLB1006
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SBRT10U50SP5-13 SBRT10U50SP5-13 Diodes Incorporated SBRT10U50SP5.pdf Description: DIODE SBR 50V 10A POWERDI5
Current - Reverse Leakage @ Vr: 75 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 10A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
auf Bestellung 102368 Stücke:
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14+1.57 EUR
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SBRT10U50SP5-13 SBRT10U50SP5-13 Diodes Incorporated SBRT10U50SP5.pdf Description: DIODE SBR 50V 10A POWERDI5
Current - Reverse Leakage @ Vr: 75 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 10A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
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SBRT20U50SLP-13 SBRT20U50SLP-13 Diodes Incorporated SBRT20U50SLP.pdf Description: DIODE SBR 50V 20A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 350pF @ 50V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerDI5060-8
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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SBRT25U60SLP-13 SBRT25U60SLP-13 Diodes Incorporated SBRT25U60SLP.pdf Description: DIODE SBR 60V 25A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 25A
Supplier Device Package: PowerDI5060-8
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 25 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
auf Bestellung 15456 Stücke:
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SBRT25U60SLP-13 SBRT25U60SLP-13 Diodes Incorporated SBRT25U60SLP.pdf Description: DIODE SBR 60V 25A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 25A
Supplier Device Package: PowerDI5060-8
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 25 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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2500+0.64 EUR
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SBRT3M40P1-7 SBRT3M40P1-7 Diodes Incorporated SBRT3M40P1.pdf Description: DIODE SBR 40V 3A POWERDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
auf Bestellung 129139 Stücke:
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17+1.24 EUR
28+0.75 EUR
100+0.49 EUR
500+0.37 EUR
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SBRT3M40P1-7 SBRT3M40P1-7 Diodes Incorporated SBRT3M40P1.pdf Description: DIODE SBR 40V 3A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
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SBRT3U40P1-7 SBRT3U40P1-7 Diodes Incorporated SBRT3U40P1.pdf Description: DIODE SBR 40V 3A POWERDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 180 µA @ 40 V
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SBRT3U40P1-7 SBRT3U40P1-7 Diodes Incorporated SBRT3U40P1.pdf Description: DIODE SBR 40V 3A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 180 µA @ 40 V
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SBRT5A50SAF-13 SBRT5A50SAF-13 Diodes Incorporated SBRT5A50SAF.pdf Description: DIODE SBR 50V 5A SMAF
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF
Current - Average Rectified (Io): 5A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
auf Bestellung 20955 Stücke:
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74AUP2G06FW4-7 74AUP2G06.pdf
74AUP2G06FW4-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 2CH 2-INP DFN1010-6
Current - Quiescent (Max): 500 nA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 10.6ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.9V
Supplier Device Package: X2-DFN1010-6
Number of Inputs: 2
Current - Output High, Low: -, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Features: Open Drain
Packaging: Cut Tape (CT)
Input Logic Level - High: 1.6V ~ 2V
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27+0.8 EUR
43+0.49 EUR
52+0.4 EUR
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74AUP2G06FZ4-7 74AUP2G06.pdf
74AUP2G06FZ4-7
Hersteller: Diodes Incorporated
Description: IC INVERT OD 2CH 2-INP DFN1410-6
Number of Circuits: 2
Part Status: Active
Max Propagation Delay @ V, Max CL: 10.6ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.9V
Input Logic Level - High: 1.6V ~ 2V
Supplier Device Package: X2-DFN1410-6
Number of Inputs: 2
Current - Output High, Low: -, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Current - Quiescent (Max): 500 nA
Package / Case: 6-XFDFN
Features: Open Drain
Packaging: Cut Tape (CT)
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25+0.83 EUR
31+0.68 EUR
34+0.62 EUR
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74AUP2G06FZ4-7 74AUP2G06.pdf
74AUP2G06FZ4-7
Hersteller: Diodes Incorporated
Description: IC INVERT OD 2CH 2-INP DFN1410-6
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Features: Open Drain
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 500 nA
Number of Circuits: 2
Part Status: Active
Max Propagation Delay @ V, Max CL: 10.6ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.9V
Input Logic Level - High: 1.6V ~ 2V
Supplier Device Package: X2-DFN1410-6
Number of Inputs: 2
Current - Output High, Low: -, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
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5000+0.23 EUR
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74AUP2G07FW3-7 74AUP2G07.pdf
74AUP2G07FW3-7
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 3.6V 6DFN
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74AUP2G07FW4-7 74AUP2G07.pdf
74AUP2G07FW4-7
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 3.6V 6DFN
Supplier Device Package: X2-DFN1010-6
Current - Output High, Low: -, 4mA
Number of Bits per Element: 1
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
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74AUP2G07FW4-7 74AUP2G07.pdf
74AUP2G07FW4-7
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 3.6V 6DFN
Supplier Device Package: X2-DFN1010-6
Current - Output High, Low: -, 4mA
Number of Bits per Element: 1
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
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74AUP2G07FZ4-7 74AUP2G07.pdf
74AUP2G07FZ4-7
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 3.6V 6DFN
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74AUP2G07FZ4-7 74AUP2G07.pdf
74AUP2G07FZ4-7
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 3.6V 6DFN
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5000+0.2 EUR
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74AUP2G14FW3-7 74AUP2G14.pdf
74AUP2G14FW3-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 2CH 2-INP DFN0910-6
Current - Quiescent (Max): 500 nA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Input Logic Level - Low: 0.1V ~ 0.88V
Input Logic Level - High: 0.6V ~ 2.29V
Supplier Device Package: X2-DFN0910-6
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
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23+0.92 EUR
31+0.68 EUR
36+0.6 EUR
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74AUP2G14FZ4-7 74AUP2G14.pdf
74AUP2G14FZ4-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 2CH 2-INP DFN1410-6
Current - Quiescent (Max): 500 nA
Number of Circuits: 2
Part Status: Active
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Input Logic Level - Low: 0.1V ~ 0.88V
Input Logic Level - High: 0.6V ~ 2.29V
Supplier Device Package: X2-DFN1410-6
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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74AUP2G14FZ4-7 74AUP2G14.pdf
74AUP2G14FZ4-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 2CH 2-INP DFN1410-6
Current - Quiescent (Max): 500 nA
Number of Circuits: 2
Part Status: Active
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Input Logic Level - Low: 0.1V ~ 0.88V
Input Logic Level - High: 0.6V ~ 2.29V
Supplier Device Package: X2-DFN1410-6
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74AUP2G17FW3-7 74AUP2G17.pdf
74AUP2G17FW3-7
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 3.6V 6DFN
Input Type: Schmitt Trigger
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: X2-DFN0910-6
Current - Output High, Low: 4mA, 4mA
Number of Bits per Element: 1
auf Bestellung 109984 Stücke:
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24+0.9 EUR
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74AUP2G17FW4-7 74AUP2G17.pdf
74AUP2G17FW4-7
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 3.6V 6DFN
Output Type: Push-Pull
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: X2-DFN1010-6
Current - Output High, Low: 4mA, 4mA
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
auf Bestellung 94056 Stücke:
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24+0.9 EUR
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48+0.44 EUR
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74AUP2G34FW4-7 74AUP2G34.pdf
74AUP2G34FW4-7
Hersteller: Diodes Incorporated
Description: IC BUFF/DVR DUAL LP 6DFN
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74AUP2G34FW4-7 74AUP2G34.pdf
74AUP2G34FW4-7
Hersteller: Diodes Incorporated
Description: IC BUFF/DVR DUAL LP 6DFN
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74AUP2G34FW4-7 74AUP2G34.pdf
74AUP2G34FW4-7
Hersteller: Diodes Incorporated
Description: IC BUFF/DVR DUAL LP 6DFN
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74AUP2G34FZ4-7 74AUP2G34.pdf
74AUP2G34FZ4-7
Hersteller: Diodes Incorporated
Description: IC BUFF NON-INVERT 3.6V 6DFN
Produkt ist nicht verfügbar
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74AUP2G34FZ4-7 74AUP2G34.pdf
74AUP2G34FZ4-7
Hersteller: Diodes Incorporated
Description: IC BUFF NON-INVERT 3.6V 6DFN
Produkt ist nicht verfügbar
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D12V0H1U2WS-7 D12V0H1U2WS.pdf
D12V0H1U2WS-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 12VWM 24VC SOD323
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 24V
Voltage - Breakdown (Min): 13.3V
Unidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 12V (Max)
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
auf Bestellung 53450 Stücke:
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42+0.5 EUR
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D12V0H1U2WS-7 D12V0H1U2WS.pdf
D12V0H1U2WS-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 12VWM 24VC SOD323
Qualification: AEC-Q101
Grade: Automotive
Voltage - Breakdown (Min): 13.3V
Unidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 12V (Max)
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 24V
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3000+0.12 EUR
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D24V0L1B2LPS-7B D24V0L1B2LPS.pdf
D24V0L1B2LPS-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 24VWM 46V X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 90W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2426 Stücke:
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22+0.99 EUR
35+0.61 EUR
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D24V0L1B2LPS-7B D24V0L1B2LPS.pdf
D24V0L1B2LPS-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 24VWM 46V X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 90W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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D5V0F4U5P5-7 D5V0F4U5P5.pdf
D5V0F4U5P5-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12.5VC SOT953
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 12.5V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 4
Supplier Device Package: SOT-953
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 0.5pF @ 1MHz
Applications: HDMI, USB
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Cut Tape (CT)
auf Bestellung 21466 Stücke:
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27+0.8 EUR
40+0.54 EUR
100+0.37 EUR
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DMG3402L-7 DMG3402L.pdf
DMG3402L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V
auf Bestellung 187753 Stücke:
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23+0.94 EUR
37+0.57 EUR
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DMG3402L-7 DMG3402L.pdf
DMG3402L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V
auf Bestellung 186000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.2 EUR
6000+0.19 EUR
9000+0.18 EUR
15000+0.17 EUR
21000+0.15 EUR
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DMN10H120SFG-7 DMN10H120SFG.pdf
DMN10H120SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 3.8A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
auf Bestellung 40601 Stücke:
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11+1.99 EUR
17+1.25 EUR
100+0.81 EUR
500+0.63 EUR
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DMN10H120SFG-7 DMN10H120SFG.pdf
DMN10H120SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 3.8A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
auf Bestellung 38000 Stücke:
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2000+0.52 EUR
4000+0.48 EUR
6000+0.45 EUR
10000+0.43 EUR
14000+0.42 EUR
20000+0.4 EUR
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DMN10H220LE-13 DMN10H220LE.pdf
DMN10H220LE-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Produkt ist nicht verfügbar
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DMN10H220LE-13 DMN10H220LE.pdf
DMN10H220LE-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Produkt ist nicht verfügbar
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DMN3032LE-13 DMN3032LE.pdf
DMN3032LE-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 15 V
auf Bestellung 107089 Stücke:
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13+1.71 EUR
20+1.06 EUR
100+0.69 EUR
500+0.52 EUR
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DMN3032LE-13 DMN3032LE.pdf
DMN3032LE-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 15 V
auf Bestellung 105000 Stücke:
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2500+0.42 EUR
5000+0.38 EUR
7500+0.37 EUR
12500+0.35 EUR
17500+0.33 EUR
25000+0.32 EUR
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DMP6250SE-13 DMP6250SE.pdf
DMP6250SE-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 2.1A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 14W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 42323 Stücke:
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10+2.15 EUR
16+1.36 EUR
100+0.89 EUR
500+0.69 EUR
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DMP6250SE-13 DMP6250SE.pdf
DMP6250SE-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 2.1A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 14W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
auf Bestellung 40000 Stücke:
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2500+0.55 EUR
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DT1452-02SO-7 DT1452-02SO.pdf
DT1452-02SO-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 11VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 1.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 11V
Power Line Protection: Yes
auf Bestellung 49139 Stücke:
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25+0.86 EUR
40+0.54 EUR
100+0.33 EUR
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DT1452-02SO-7 DT1452-02SO.pdf
DT1452-02SO-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 11VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 1.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 11V
Power Line Protection: Yes
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.19 EUR
6000+0.17 EUR
15000+0.15 EUR
21000+0.14 EUR
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DXT696BK-13 DXT696BK.pdf
DXT696BK-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 180V 0.5A TO-252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 200mA, 5V
Frequency - Transition: 70MHz
Supplier Device Package: TO-252-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 3.9 W
auf Bestellung 3495 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.7 EUR
20+1.05 EUR
100+0.68 EUR
500+0.52 EUR
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DXT696BK-13 DXT696BK.pdf
DXT696BK-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 180V 0.5A TO-252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 200mA, 5V
Frequency - Transition: 70MHz
Supplier Device Package: TO-252-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 3.9 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.42 EUR
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GDZ3V9LP3-7 GDZxVxLP3.pdf
GDZ3V9LP3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.9V 250MW 2DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 17019 Stücke:
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39+0.55 EUR
64+0.33 EUR
103+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
5000+0.1 EUR
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GDZ3V9LP3-7 GDZxVxLP3.pdf
GDZ3V9LP3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.9V 250MW 2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
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10000+0.092 EUR
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GDZ4V7LP3-7 GDZxVxLP3.pdf
GDZ4V7LP3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 4.7V 250MW 2DFN
auf Bestellung 5174 Stücke:
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GDZ4V7LP3-7 GDZxVxLP3.pdf
GDZ4V7LP3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 4.7V 250MW 2DFN
Produkt ist nicht verfügbar
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MBRF10150CT-LJ MBR%28F%2910150CT.pdf
MBRF10150CT-LJ
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 150V 5A ITO220AB
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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MBRF1060CT-JT MBRF1030_60CT.pdf
MBRF1060CT-JT
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 60V 5A ITO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar
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MBRF20200CT-LJ MBR%28F%2920200CT_20A.pdf
MBRF20200CT-LJ
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTTKY 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRF2045CT-LJ MBR%28F%292045CT-2060CT.pdf
MBRF2045CT-LJ
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 45V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRF2060CT-LJ MBR%28F%292045CT-2060CT.pdf
MBRF2060CT-LJ
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRF3045CT-LJ MBR%28F%293045CT.pdf
MBRF3045CT-LJ
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 45V 15A ITO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar
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SBR05U40CSP-7 SBR05U40CSP.pdf
SBR05U40CSP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 500MA WLB1006
auf Bestellung 3160 Stücke:
Lieferzeit 10-14 Tag (e)
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SBR05U40CSP-7 SBR05U40CSP.pdf
SBR05U40CSP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 500MA WLB1006
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SBR05U40CSP-7 SBR05U40CSP.pdf
SBR05U40CSP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 500MA WLB1006
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SBRT10U50SP5-13 SBRT10U50SP5.pdf
SBRT10U50SP5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 50V 10A POWERDI5
Current - Reverse Leakage @ Vr: 75 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 10A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
auf Bestellung 102368 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.57 EUR
21+1.01 EUR
100+0.82 EUR
500+0.64 EUR
1000+0.56 EUR
2000+0.52 EUR
Mindestbestellmenge: 14 Stücke
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SBRT10U50SP5-13 SBRT10U50SP5.pdf
SBRT10U50SP5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 50V 10A POWERDI5
Current - Reverse Leakage @ Vr: 75 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 10A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.48 EUR
10000+0.45 EUR
15000+0.42 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SBRT20U50SLP-13 SBRT20U50SLP.pdf
SBRT20U50SLP-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 50V 20A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 350pF @ 50V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerDI5060-8
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
auf Bestellung 6868 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.01 EUR
14+1.52 EUR
100+1.14 EUR
500+0.89 EUR
1000+0.82 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SBRT25U60SLP-13 SBRT25U60SLP.pdf
SBRT25U60SLP-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 25A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 25A
Supplier Device Package: PowerDI5060-8
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 25 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
auf Bestellung 15456 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.74 EUR
16+1.33 EUR
100+1.13 EUR
500+0.88 EUR
1000+0.81 EUR
Mindestbestellmenge: 13 Stücke
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SBRT25U60SLP-13 SBRT25U60SLP.pdf
SBRT25U60SLP-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 25A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 25A
Supplier Device Package: PowerDI5060-8
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 25 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.64 EUR
5000+0.63 EUR
Mindestbestellmenge: 2500 Stücke
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SBRT3M40P1-7 SBRT3M40P1.pdf
SBRT3M40P1-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 3A POWERDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
auf Bestellung 129139 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.24 EUR
28+0.75 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.33 EUR
Mindestbestellmenge: 17 Stücke
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SBRT3M40P1-7 SBRT3M40P1.pdf
SBRT3M40P1-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 3A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
auf Bestellung 129000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.27 EUR
6000+0.25 EUR
9000+0.24 EUR
15000+0.23 EUR
30000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SBRT3U40P1-7 SBRT3U40P1.pdf
SBRT3U40P1-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 3A POWERDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 180 µA @ 40 V
auf Bestellung 17947 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
65+0.32 EUR
100+0.27 EUR
500+0.23 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SBRT3U40P1-7 SBRT3U40P1.pdf
SBRT3U40P1-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 3A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 180 µA @ 40 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SBRT5A50SAF-13 SBRT5A50SAF.pdf
SBRT5A50SAF-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 50V 5A SMAF
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF
Current - Average Rectified (Io): 5A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
auf Bestellung 20955 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.71 EUR
20+1.07 EUR
100+0.69 EUR
500+0.54 EUR
1000+0.48 EUR
2000+0.44 EUR
5000+0.39 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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