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AP7346D-3318FS6-7 AP7346D-3318FS6-7 Diodes Incorporated AP7346.pdf Description: IC REG LIN 1.8V/3.3V X2DFN1212-6
Current - Output: 130mA, 130mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current
Voltage Dropout (Max): 0.39V @ 120mA, 0.29V @ 120mA
PSRR: 75dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V, 3.3V
Supplier Device Package: X2-DFN1212-6
Number of Regulators: 2
Voltage - Input (Max): 5.25V
Current - Quiescent (Iq): 100 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Produkt ist nicht verfügbar
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SB120-B Diodes Incorporated ds23022.pdf Description: DIODE SCHOTTKY 20V 1A DO41
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SB130-B SB130-B Diodes Incorporated ds23022.pdf Description: DIODE SCHOTTKY 30V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
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SB140-B SB140-B Diodes Incorporated SB120-SB160.pdf Description: DIODE SCHOTTKY 40V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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SB150-B SB150-B Diodes Incorporated SB120-SB160.pdf Description: DIODE SCHOTTKY 50V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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SB160-B SB160-B Diodes Incorporated SB120-SB160.pdf Description: DIODE SCHOTTKY 60V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SBR20100CT-G SBR20100CT-G Diodes Incorporated SBR20100.pdf Description: DIODE ARRAY SBR 100V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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74AHC164D14 74AHC164D14 Diodes Incorporated 74AHC164.pdf Description: LOGIC AHC STD 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: Push-Pull
Mounting Type: Through Hole
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 14-PDIP
Part Status: Active
Number of Bits per Element: 8
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74AHCT164D14 74AHCT164D14 Diodes Incorporated 74AHCT164.pdf Description: LOGIC AHC STD 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: Push-Pull
Mounting Type: Through Hole
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 14-PDIP
Part Status: Active
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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BAS40Q-7-F BAS40Q-7-F Diodes Incorporated BAS40_-04_-05_-06.pdf Description: DIODE SCHOTTKY 40V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Qualification: AEC-Q101
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FMMT591AQTA FMMT591AQTA Diodes Incorporated FMMT591A.pdf Description: TRANS PNP 40V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
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MMBTA56Q-7-F MMBTA56Q-7-F Diodes Incorporated MMBTA55Q_MMBTA56Q.pdf Description: TRANS PNP 80V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
Qualification: AEC-Q101
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B240AQ-13-F B240AQ-13-F Diodes Incorporated B220_A-B260_A.pdf Description: DIODE SCHOTTKY 40V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 40V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
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DMG6898LSDQ-13 DMG6898LSDQ-13 Diodes Incorporated DMG6898LSD.pdf Description: MOSFET 2N-CH 20V 9.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.28W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
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MBRD20200CT-13 MBRD20200CT-13 Diodes Incorporated MBRD20200CT.pdf Description: DIODE ARR SCHOT 200V 10A TO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Qualification: AEC-Q101
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US3M-13 US3M-13 Diodes Incorporated US3M.pdf Description: DIODE STANDARD 1000V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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BAT54SWQ-7-F BAT54SWQ-7-F Diodes Incorporated SWQ.pdf Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BAT54WSQ-7-F BAT54WSQ-7-F Diodes Incorporated BAT54WS.pdf Description: DIODE SCHOTTKY 30V 100MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAV70WQ-7-F BAV70WQ-7-F Diodes Incorporated BAV70W.pdf Description: DIODE ARRAY GP 75V 300MA SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 50 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS84WQ-7-F BSS84WQ-7-F Diodes Incorporated BSS84W.pdf Description: MOSFET P-CH 50V 130MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
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DDTC124TEQ-7-F DDTC124TEQ-7-F Diodes Incorporated DDTC_R1-ONLY_SERIES_E.pdf Description: TRANS PREBIAS NPN 50V SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
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DDZ12BQ-7 DDZ12BQ-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 12V 370MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
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DMN3033LSNQ-7 DMN3033LSNQ-7 Diodes Incorporated DMN3033LSNQ.pdf Description: MOSFET N-CH 30V 6A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V
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DMN5L06DMKQ-7 DMN5L06DMKQ-7 Diodes Incorporated Description: MOSFET 2N-CH 50V 305MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 305mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Produkt ist nicht verfügbar
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DMN6140LQ-7 DMN6140LQ-7 Diodes Incorporated DMN6140LQ.pdf Description: MOSFET N-CH 60V 1.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V
Qualification: AEC-Q101
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DSS5240TQ-7 DSS5240TQ-7 Diodes Incorporated DSS5240TQ.pdf Description: TRANS PNP 40V 2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 730 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5240BQ-7-F MMSZ5240BQ-7-F Diodes Incorporated ds18010.pdf Description: DIODE ZENER 10V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
Qualification: AEC-Q101
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BAS40Q-7-F BAS40Q-7-F Diodes Incorporated BAS40_-04_-05_-06.pdf Description: DIODE SCHOTTKY 40V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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FMMT591AQTA FMMT591AQTA Diodes Incorporated FMMT591A.pdf Description: TRANS PNP 40V 1A SOT-23-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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MMBTA56Q-7-F MMBTA56Q-7-F Diodes Incorporated MMBTA55Q_MMBTA56Q.pdf Description: TRANS PNP 80V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
Grade: Automotive
Qualification: AEC-Q101
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B240AQ-13-F B240AQ-13-F Diodes Incorporated B220_A-B260_A.pdf Description: DIODE SCHOTTKY 40V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 40V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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DMG6898LSDQ-13 DMG6898LSDQ-13 Diodes Incorporated DMG6898LSD.pdf Description: MOSFET 2N-CH 20V 9.5A 8SO
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.28W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.5V @ 250µA
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MBRD20200CT-13 MBRD20200CT-13 Diodes Incorporated MBRD20200CT.pdf Description: DIODE ARR SCHOT 200V 10A TO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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US3M-13 US3M-13 Diodes Incorporated US3M.pdf Description: DIODE STANDARD 1000V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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BAT54SWQ-7-F BAT54SWQ-7-F Diodes Incorporated SWQ.pdf Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BAT54WSQ-7-F BAT54WSQ-7-F Diodes Incorporated BAT54WS.pdf Description: DIODE SCHOTTKY 30V 100MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
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BAV70WQ-7-F BAV70WQ-7-F Diodes Incorporated BAV70W.pdf Description: DIODE ARRAY GP 75V 300MA SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 50 µA @ 75 V
Qualification: AEC-Q101
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BSS84WQ-7-F BSS84WQ-7-F Diodes Incorporated BSS84W.pdf Description: MOSFET P-CH 50V 130MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
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DDTC124TEQ-7-F DDTC124TEQ-7-F Diodes Incorporated DDTC_R1-ONLY_SERIES_E.pdf Description: TRANS PREBIAS NPN 50V SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
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DDZ12BQ-7 DDZ12BQ-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 12V 370MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
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DMN3033LSNQ-7 DMN3033LSNQ-7 Diodes Incorporated DMN3033LSNQ.pdf Description: MOSFET N-CH 30V 6A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V
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DMN6140LQ-7 DMN6140LQ-7 Diodes Incorporated DMN6140LQ.pdf Description: MOSFET N-CH 60V 1.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V
Qualification: AEC-Q101
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DSS5240TQ-7 DSS5240TQ-7 Diodes Incorporated DSS5240TQ.pdf Description: TRANS PNP 40V 2A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 730 mW
Qualification: AEC-Q101
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MMSZ5240BQ-7-F MMSZ5240BQ-7-F Diodes Incorporated ds18010.pdf Description: DIODE ZENER 10V 370MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
Qualification: AEC-Q101
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SBR10E45P5-7 SBR10E45P5-7 Diodes Incorporated SBR10E45P5.pdf Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
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DMP2002UPS-13 DMP2002UPS-13 Diodes Incorporated DMP2002UPS.pdf Description: MOSFET P-CH 20V 60A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V
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DMP6050SSD-13 DMP6050SSD-13 Diodes Incorporated DMP6050SSD.pdf Description: MOSFET 2P-CH 60V 4.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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DMT8012LK3-13 DMT8012LK3-13 Diodes Incorporated DMT8012LK3.pdf Description: MOSFET N-CH 80V 44A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
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DMTH8012LK3-13 DMTH8012LK3-13 Diodes Incorporated DMTH8012LK3.pdf Description: MOSFET N-CH 80V 50A TO252
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DMTH8012LPS-13 DMTH8012LPS-13 Diodes Incorporated DMTH8012LPS.pdf Description: MOSFET N-CH 80V 9.5A PWRDI5060-8
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DT6250-06MR-13 DT6250-06MR-13 Diodes Incorporated DT6250-06MR.pdf Description: TVS DIODE 5VWM 10VC 8-MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 8-MSOP
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
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SBRT10U60D1-13 SBRT10U60D1-13 Diodes Incorporated SBRT10U60D1.pdf Description: DIODE SBR 60V 10A TO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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APT17NTR-G1 Diodes Incorporated Description: TRANS NPN 480V 0.05A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 20V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 200 mW
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D5V0M5B6LP16-7 D5V0M5B6LP16-7 Diodes Incorporated D5V0M5B6LP16.pdf Description: TVS DIODE 5VWM 14VC U-DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: U-DFN1616-6
Bidirectional Channels: 5
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 130W
Power Line Protection: No
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DESD5V0U1BA-7 DESD5V0U1BA-7 Diodes Incorporated DESD5V0U1BA.pdf Description: TVS DIODE 5VWM 7.2VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 7.2V (Typ)
Power Line Protection: No
Part Status: Active
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DMHC10H170SFJ-13 DMHC10H170SFJ-13 Diodes Incorporated DMHC10H170SFJ.pdf Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
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DMP1011UCB9-7 DMP1011UCB9-7 Diodes Incorporated DMP1011UCB9.pdf Description: MOSFET P-CH 8V 10A U-WLB1515-9
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V
Power Dissipation (Max): 890mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V
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DMP6110SVT-7 DMP6110SVT-7 Diodes Incorporated DMP6110SVT.pdf Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
Produkt ist nicht verfügbar
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SBRT4U10LP-7 SBRT4U10LP-7 Diodes Incorporated SBRT4U10LP.pdf Description: DIODE SBR 10V 4A U-DFN2020-2
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SBRT4U15LP-7 SBRT4U15LP-7 Diodes Incorporated Description: DIODE SBR 15V 4A U-DFN2020-2
Packaging: Tape & Reel (TR)
Package / Case: 2-UDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 4A
Supplier Device Package: U-DFN2020-2
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 15 V
Qualification: AEC-Q101
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AP7346D-3318FS6-7 AP7346.pdf
AP7346D-3318FS6-7
Hersteller: Diodes Incorporated
Description: IC REG LIN 1.8V/3.3V X2DFN1212-6
Current - Output: 130mA, 130mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current
Voltage Dropout (Max): 0.39V @ 120mA, 0.29V @ 120mA
PSRR: 75dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V, 3.3V
Supplier Device Package: X2-DFN1212-6
Number of Regulators: 2
Voltage - Input (Max): 5.25V
Current - Quiescent (Iq): 100 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Produkt ist nicht verfügbar
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SB120-B ds23022.pdf
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 20V 1A DO41
Produkt ist nicht verfügbar
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SB130-B ds23022.pdf
SB130-B
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
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SB140-B SB120-SB160.pdf
SB140-B
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
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SB150-B SB120-SB160.pdf
SB150-B
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Produkt ist nicht verfügbar
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SB160-B SB120-SB160.pdf
SB160-B
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
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SBR20100CT-G SBR20100.pdf
SBR20100CT-G
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 100V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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74AHC164D14 74AHC164.pdf
74AHC164D14
Hersteller: Diodes Incorporated
Description: LOGIC AHC STD 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: Push-Pull
Mounting Type: Through Hole
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 14-PDIP
Part Status: Active
Number of Bits per Element: 8
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10+2.14 EUR
17+1.3 EUR
25+1.08 EUR
100+0.83 EUR
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74AHCT164D14 74AHCT164.pdf
74AHCT164D14
Hersteller: Diodes Incorporated
Description: LOGIC AHC STD 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: Push-Pull
Mounting Type: Through Hole
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 14-PDIP
Part Status: Active
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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BAS40Q-7-F BAS40_-04_-05_-06.pdf
BAS40Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Qualification: AEC-Q101
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FMMT591AQTA FMMT591A.pdf
FMMT591AQTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
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3000+0.33 EUR
6000+0.3 EUR
9000+0.29 EUR
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30000+0.25 EUR
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MMBTA56Q-7-F MMBTA55Q_MMBTA56Q.pdf
MMBTA56Q-7-F
Hersteller: Diodes Incorporated
Description: TRANS PNP 80V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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B240AQ-13-F B220_A-B260_A.pdf
B240AQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 40V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMG6898LSDQ-13 DMG6898LSD.pdf
DMG6898LSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 9.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.28W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
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MBRD20200CT-13 MBRD20200CT.pdf
MBRD20200CT-13
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 200V 10A TO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Qualification: AEC-Q101
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2500+0.7 EUR
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US3M-13 US3M.pdf
US3M-13
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 1000V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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BAT54SWQ-7-F SWQ.pdf
BAT54SWQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAT54WSQ-7-F BAT54WS.pdf
BAT54WSQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 100MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAV70WQ-7-F BAV70W.pdf
BAV70WQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 75V 300MA SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 50 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS84WQ-7-F BSS84W.pdf
BSS84WQ-7-F
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 130MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.068 EUR
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DDTC124TEQ-7-F DDTC_R1-ONLY_SERIES_E.pdf
DDTC124TEQ-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
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3000+0.083 EUR
6000+0.077 EUR
9000+0.064 EUR
30000+0.063 EUR
75000+0.057 EUR
150000+0.049 EUR
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DDZ12BQ-7 DDZ5V1B-DDZ43.pdf
DDZ12BQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 12V 370MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
auf Bestellung 237000 Stücke:
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DMN3033LSNQ-7 DMN3033LSNQ.pdf
DMN3033LSNQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 6A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V
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3000+0.27 EUR
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DMN5L06DMKQ-7
DMN5L06DMKQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 305MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 305mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Produkt ist nicht verfügbar
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DMN6140LQ-7 DMN6140LQ.pdf
DMN6140LQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V
Qualification: AEC-Q101
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AnzahlPrivatkunde
3000+0.17 EUR
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DSS5240TQ-7 DSS5240TQ.pdf
DSS5240TQ-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 730 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5240BQ-7-F ds18010.pdf
MMSZ5240BQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 10V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
Qualification: AEC-Q101
auf Bestellung 60000 Stücke:
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AnzahlPrivatkunde
3000+0.046 EUR
9000+0.043 EUR
15000+0.04 EUR
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BAS40Q-7-F BAS40_-04_-05_-06.pdf
BAS40Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 534553 Stücke:
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40+0.52 EUR
67+0.31 EUR
108+0.19 EUR
500+0.14 EUR
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FMMT591AQTA FMMT591A.pdf
FMMT591AQTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 1A SOT-23-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 319197 Stücke:
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AnzahlPrivatkunde
15+1.43 EUR
24+0.88 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.38 EUR
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MMBTA56Q-7-F MMBTA55Q_MMBTA56Q.pdf
MMBTA56Q-7-F
Hersteller: Diodes Incorporated
Description: TRANS PNP 80V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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B240AQ-13-F B220_A-B260_A.pdf
B240AQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 40V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3958 Stücke:
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36+0.58 EUR
52+0.4 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.21 EUR
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DMG6898LSDQ-13 DMG6898LSD.pdf
DMG6898LSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 9.5A 8SO
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.28W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.5V @ 250µA
auf Bestellung 24984 Stücke:
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13+1.7 EUR
15+1.49 EUR
100+1.02 EUR
500+0.86 EUR
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MBRD20200CT-13 MBRD20200CT.pdf
MBRD20200CT-13
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 200V 10A TO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18523 Stücke:
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8+2.67 EUR
13+1.68 EUR
100+1.12 EUR
500+0.87 EUR
1000+0.8 EUR
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US3M-13 US3M.pdf
US3M-13
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 1000V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1871 Stücke:
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13+1.74 EUR
20+1.08 EUR
100+0.7 EUR
500+0.54 EUR
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BAT54SWQ-7-F SWQ.pdf
BAT54SWQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1612 Stücke:
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38+0.57 EUR
61+0.35 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
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BAT54WSQ-7-F BAT54WS.pdf
BAT54WSQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 100MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
auf Bestellung 3982 Stücke:
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AnzahlPrivatkunde
42+0.5 EUR
69+0.31 EUR
112+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
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BAV70WQ-7-F BAV70W.pdf
BAV70WQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 75V 300MA SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 50 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS84WQ-7-F BSS84W.pdf
BSS84WQ-7-F
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 130MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5900 Stücke:
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AnzahlPrivatkunde
59+0.36 EUR
102+0.2 EUR
164+0.13 EUR
500+0.093 EUR
1000+0.082 EUR
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DDTC124TEQ-7-F DDTC_R1-ONLY_SERIES_E.pdf
DDTC124TEQ-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
auf Bestellung 418088 Stücke:
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42+0.5 EUR
62+0.35 EUR
126+0.17 EUR
500+0.14 EUR
1000+0.096 EUR
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DDZ12BQ-7 DDZ5V1B-DDZ43.pdf
DDZ12BQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 12V 370MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
auf Bestellung 237002 Stücke:
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AnzahlPrivatkunde
36+0.58 EUR
44+0.48 EUR
100+0.25 EUR
500+0.17 EUR
1000+0.11 EUR
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DMN3033LSNQ-7 DMN3033LSNQ.pdf
DMN3033LSNQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 6A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V
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22+0.96 EUR
26+0.81 EUR
100+0.57 EUR
500+0.44 EUR
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DMN6140LQ-7 DMN6140LQ.pdf
DMN6140LQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V
Qualification: AEC-Q101
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100+0.25 EUR
500+0.24 EUR
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DSS5240TQ-7 DSS5240TQ.pdf
DSS5240TQ-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 2A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 730 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5240BQ-7-F ds18010.pdf
MMSZ5240BQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 10V 370MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
Qualification: AEC-Q101
auf Bestellung 64935 Stücke:
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84+0.25 EUR
125+0.17 EUR
260+0.081 EUR
500+0.079 EUR
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SBR10E45P5-7 SBR10E45P5.pdf
SBR10E45P5-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
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1500+0.35 EUR
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DMP2002UPS-13 DMP2002UPS.pdf
DMP2002UPS-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 60A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V
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2500+1.68 EUR
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DMP6050SSD-13 DMP6050SSD.pdf
DMP6050SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 4.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 15000 Stücke:
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2500+0.57 EUR
5000+0.54 EUR
7500+0.51 EUR
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DMT8012LK3-13 DMT8012LK3.pdf
DMT8012LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 44A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
auf Bestellung 207500 Stücke:
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2500+0.74 EUR
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DMTH8012LK3-13 DMTH8012LK3.pdf
DMTH8012LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 50A TO252
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DMTH8012LPS-13 DMTH8012LPS.pdf
DMTH8012LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 9.5A PWRDI5060-8
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DT6250-06MR-13 DT6250-06MR.pdf
DT6250-06MR-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 10VC 8-MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 8-MSOP
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
auf Bestellung 105000 Stücke:
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2500+0.35 EUR
5000+0.32 EUR
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SBRT10U60D1-13 SBRT10U60D1.pdf
SBRT10U60D1-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 10A TO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
auf Bestellung 40000 Stücke:
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2500+0.93 EUR
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APT17NTR-G1
Hersteller: Diodes Incorporated
Description: TRANS NPN 480V 0.05A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 20V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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D5V0M5B6LP16-7 D5V0M5B6LP16.pdf
D5V0M5B6LP16-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 14VC U-DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: U-DFN1616-6
Bidirectional Channels: 5
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 130W
Power Line Protection: No
auf Bestellung 42000 Stücke:
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3000+0.18 EUR
6000+0.17 EUR
9000+0.15 EUR
30000+0.14 EUR
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DESD5V0U1BA-7 DESD5V0U1BA.pdf
DESD5V0U1BA-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 7.2VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 7.2V (Typ)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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DMHC10H170SFJ-13 DMHC10H170SFJ.pdf
DMHC10H170SFJ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
Produkt ist nicht verfügbar
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DMP1011UCB9-7 DMP1011UCB9.pdf
DMP1011UCB9-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 8V 10A U-WLB1515-9
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V
Power Dissipation (Max): 890mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V
auf Bestellung 270000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.63 EUR
6000+0.58 EUR
9000+0.56 EUR
15000+0.54 EUR
21000+0.51 EUR
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DMP6110SVT-7 DMP6110SVT.pdf
DMP6110SVT-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
Produkt ist nicht verfügbar
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SBRT4U10LP-7 SBRT4U10LP.pdf
SBRT4U10LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 10V 4A U-DFN2020-2
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SBRT4U15LP-7
SBRT4U15LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 15V 4A U-DFN2020-2
Packaging: Tape & Reel (TR)
Package / Case: 2-UDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 4A
Supplier Device Package: U-DFN2020-2
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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