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SBRT4U30LP-7 SBRT4U30LP-7 Diodes Incorporated SBRT4U30LP.pdf Description: DIODE SBR 30V 4A U-DFN2020-2
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ZXTR2112F-7 ZXTR2112F-7 Diodes Incorporated ZXTR2112F.pdf Description: IC REG LINEAR 12V 15MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 15mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 360 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 12V
Grade: Automotive
Part Status: Active
PSRR: 50dB (100Hz)
Current - Supply (Max): 6 mA
Qualification: AEC-Q101
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6000+0.25 EUR
21000+0.24 EUR
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D3V3L2B3LP10-7 D3V3L2B3LP10-7 Diodes Incorporated D3V3L2B3LP10.pdf Description: TVS DIODE 3.3VWM 7V X2DFN10103
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DFN1010-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 3.8V
Voltage - Clamping (Max) @ Ipp: 7V
Power - Peak Pulse: 35W
Power Line Protection: No
Part Status: Active
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35000+0.14 EUR
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D5V0F2B3LP10-7 D5V0F2B3LP10-7 Diodes Incorporated Description: TVS DIODE 5.5VWM 12VC X2-DFN1010
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
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SBR10E45P5-13 SBR10E45P5-13 Diodes Incorporated SBR10E45P5.pdf Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
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SBRT3M60SA-13 SBRT3M60SA-13 Diodes Incorporated Description: DIODE SBR 60V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
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SBRT3U60SA-13 SBRT3U60SA-13 Diodes Incorporated Description: DIODE SBR 60V 3A SMA
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 3A
Technology: Super Barrier
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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D5V0L1B2DLP3-7 D5V0L1B2DLP3-7 Diodes Incorporated D5V0L1B2DLP3.pdf Description: TVS DIODE 5VWM 14VC X3ESN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: X3-ESN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 84W
Power Line Protection: No
Produkt ist nicht verfügbar
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D5V0M1U2S9-7 D5V0M1U2S9-7 Diodes Incorporated D5V0M1U2S9.pdf Description: TVS DIODE 5.5VWM 12VC SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 54pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 108W
Power Line Protection: No
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10000+0.079 EUR
20000+0.071 EUR
30000+0.068 EUR
50000+0.063 EUR
70000+0.061 EUR
100000+0.058 EUR
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DMP6110SVT-13 DMP6110SVT-13 Diodes Incorporated DMP6110SVT.pdf Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
Produkt ist nicht verfügbar
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SBRT3U45SAF-13 SBRT3U45SAF-13 Diodes Incorporated SBRT3U45SAF.pdf Description: DIODE SBR 45V 3A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
auf Bestellung 140000 Stücke:
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SBR10E45P5-7 SBR10E45P5-7 Diodes Incorporated SBR10E45P5.pdf Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
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DMP2002UPS-13 DMP2002UPS-13 Diodes Incorporated DMP2002UPS.pdf Description: MOSFET P-CH 20V 60A PWRDI5060-8
Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: PowerDI5060-8 (Type K)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 2.3W (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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DMP6050SSD-13 DMP6050SSD-13 Diodes Incorporated DMP6050SSD.pdf Description: MOSFET 2P-CH 60V 4.8A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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500+0.74 EUR
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DMT8012LK3-13 DMT8012LK3-13 Diodes Incorporated DMT8012LK3.pdf Description: MOSFET N-CH 80V 44A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.7W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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500+0.9 EUR
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DMTH8012LK3-13 DMTH8012LK3-13 Diodes Incorporated DMTH8012LK3.pdf Description: MOSFET N-CH 80V 50A TO252
Produkt ist nicht verfügbar
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DMTH8012LPS-13 DMTH8012LPS-13 Diodes Incorporated DMTH8012LPS.pdf Description: MOSFET N-CH 80V 9.5A PWRDI5060-8
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DT6250-06MR-13 DT6250-06MR-13 Diodes Incorporated DT6250-06MR.pdf Description: TVS DIODE 5VWM 10VC 8-MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 8-MSOP
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
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1000+0.39 EUR
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SBRT10U60D1-13 SBRT10U60D1-13 Diodes Incorporated SBRT10U60D1.pdf Description: DIODE SBR 60V 10A TO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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10+2.13 EUR
100+1.43 EUR
500+1.13 EUR
1000+1.02 EUR
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D5V0M5B6LP16-7 D5V0M5B6LP16-7 Diodes Incorporated D5V0M5B6LP16.pdf Description: TVS DIODE 5VWM 14VC U-DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: U-DFN1616-6
Bidirectional Channels: 5
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 130W
Power Line Protection: No
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38+0.56 EUR
100+0.29 EUR
500+0.25 EUR
1000+0.19 EUR
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DESD5V0U1BA-7 DESD5V0U1BA-7 Diodes Incorporated DESD5V0U1BA.pdf Description: TVS DIODE 5VWM 7.2VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 7.2V (Typ)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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DMHC10H170SFJ-13 DMHC10H170SFJ-13 Diodes Incorporated DMHC10H170SFJ.pdf Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN
Packaging: Cut Tape (CT)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
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10+2.3 EUR
100+1.54 EUR
500+1.21 EUR
1000+1.12 EUR
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DMP1011UCB9-7 DMP1011UCB9-7 Diodes Incorporated DMP1011UCB9.pdf Description: MOSFET P-CH 8V 10A U-WLB1515-9
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V
Power Dissipation (Max): 890mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V
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14+1.55 EUR
100+1.02 EUR
500+0.8 EUR
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DMP6110SVT-7 DMP6110SVT-7 Diodes Incorporated DMP6110SVT.pdf Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
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20+1.06 EUR
100+0.69 EUR
500+0.52 EUR
1000+0.48 EUR
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SBRT4U10LP-7 SBRT4U10LP-7 Diodes Incorporated SBRT4U10LP.pdf Description: DIODE SBR 10V 4A U-DFN2020-2
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SBRT4U30LP-7 SBRT4U30LP-7 Diodes Incorporated SBRT4U30LP.pdf Description: DIODE SBR 30V 4A U-DFN2020-2
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16+1.32 EUR
19+1.17 EUR
100+0.89 EUR
500+0.7 EUR
1000+0.56 EUR
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SBRT6U10LP-7 SBRT6U10LP-7 Diodes Incorporated SBRT6U10LP.pdf Description: DIODE SBR 10V 6A U-DFN3030-8
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SBRT6U20LP-7 SBRT6U20LP-7 Diodes Incorporated SBRT6U20LP.pdf Description: DIODE SBR 20V 6A U-DFN3030-8
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SBRT6U45LP-7 SBRT6U45LP-7 Diodes Incorporated SBRT6U45LP.pdf Description: DIODE SBR 45V 6A U-DFN3030-8
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ZXTR2112F-7 ZXTR2112F-7 Diodes Incorporated ZXTR2112F.pdf Description: IC REG LINEAR 12V 15MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 15mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 360 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 12V
Grade: Automotive
Part Status: Active
PSRR: 50dB (100Hz)
Current - Supply (Max): 6 mA
Qualification: AEC-Q101
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AP1695-20CS7-13 AP1695-20CS7-13 Diodes Incorporated Description: IC LED DRIVER OFFL TRIAC 2A 7SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 2A
Internal Switch(s): Yes
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SO
Dimming: Triac
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 25V
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D3V3L2B3LP10-7 D3V3L2B3LP10-7 Diodes Incorporated D3V3L2B3LP10.pdf Description: TVS DIODE 3.3VWM 7V X2DFN10103
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DFN1010-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 3.8V
Voltage - Clamping (Max) @ Ipp: 7V
Power - Peak Pulse: 35W
Power Line Protection: No
Part Status: Active
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D5V0F2B3LP10-7 D5V0F2B3LP10-7 Diodes Incorporated Description: TVS DIODE 5.5VWM 12VC X2-DFN1010
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
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SBR10E45P5-13 SBR10E45P5-13 Diodes Incorporated SBR10E45P5.pdf Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
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D5V0L1B2DLP3-7 D5V0L1B2DLP3-7 Diodes Incorporated D5V0L1B2DLP3.pdf Description: TVS DIODE 5VWM 14VC X3ESN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: X3-ESN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 84W
Power Line Protection: No
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D5V0M1U2S9-7 D5V0M1U2S9-7 Diodes Incorporated D5V0M1U2S9.pdf Description: TVS DIODE 5.5VWM 12VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 54pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 108W
Power Line Protection: No
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SBRT3U45SAF-13 SBRT3U45SAF-13 Diodes Incorporated SBRT3U45SAF.pdf Description: DIODE SBR 45V 3A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
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DMTH8012LK3-13 DMTH8012LK3-13 Diodes Incorporated DMTH8012LK3.pdf Description: MOSFET N-CH 80V 50A TO252
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DMTH8012LPS-13 DMTH8012LPS-13 Diodes Incorporated DMTH8012LPS.pdf Description: MOSFET N-CH 80V 9.5A PWRDI5060-8
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SBRT4U10LP-7 SBRT4U10LP-7 Diodes Incorporated SBRT4U10LP.pdf Description: DIODE SBR 10V 4A U-DFN2020-2
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DMN3033LSNQ-13 DMN3033LSNQ-13 Diodes Incorporated DMN3033LSNQ.pdf Description: MOSFET N-CH 30V 6A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V
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SBR10E45P5-7D SBR10E45P5-7D Diodes Incorporated SBR10E45P5.pdf Description: DIODE SBR 45V 10A POWERDI5
Produkt ist nicht verfügbar
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DESD34VS2SO-7 DESD34VS2SO-7 Diodes Incorporated DESD34VS2SO.pdf Description: TVS DIODE 34VWM 57VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 34V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36V
Voltage - Clamping (Max) @ Ipp: 57V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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3000+0.17 EUR
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DMN3015LSD-13 DMN3015LSD-13 Diodes Incorporated DMN3015LSD.pdf Description: MOSFET 2N-CH 30V 8.4A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMN3027LFG-7 DMN3027LFG-7 Diodes Incorporated DMN3027LFG.pdf Description: MOSFET N-CH 30V 5.3A PWRDI3333-8
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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SBR1A400P1-7 SBR1A400P1-7 Diodes Incorporated SBR1A400P1.pdf Description: DIODE SBR 400V 1A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Super Barrier
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
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ZXGD3107N8TC ZXGD3107N8TC Diodes Incorporated ZXGD3107N8.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 40V (Max)
Input Type: Non-Inverting
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 175ns, 20ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A, 7A
Part Status: Active
DigiKey Programmable: Not Verified
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DESD34VS2SO-7 DESD34VS2SO-7 Diodes Incorporated DESD34VS2SO.pdf Description: TVS DIODE 34VWM 57VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 34V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36V
Voltage - Clamping (Max) @ Ipp: 57V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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DMN3015LSD-13 DMN3015LSD-13 Diodes Incorporated DMN3015LSD.pdf Description: MOSFET 2N-CH 30V 8.4A 8SO
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
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DMN3027LFG-7 DMN3027LFG-7 Diodes Incorporated DMN3027LFG.pdf Description: MOSFET N-CH 30V 5.3A PWRDI3333-8
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 18854 Stücke:
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SBR1A400P1-7 SBR1A400P1-7 Diodes Incorporated SBR1A400P1.pdf Description: DIODE SBR 400V 1A POWERDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Super Barrier
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
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Lieferzeit 10-14 Tag (e)
16+1.36 EUR
25+0.84 EUR
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ZXGD3107N8TC ZXGD3107N8TC Diodes Incorporated ZXGD3107N8.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 40V (Max)
Input Type: Non-Inverting
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 175ns, 20ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A, 7A
Part Status: Active
DigiKey Programmable: Not Verified
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11+1.9 EUR
16+1.37 EUR
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DMN3027LFG-13 DMN3027LFG-13 Diodes Incorporated DMN3027LFG.pdf Description: MOSFET N-CH 30V 5.3A PWRDI3333-8
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SBR20E100CT SBR20E100CT Diodes Incorporated SBR20E100CT.pdf Description: DIODE ARR SBR 100V 10A TO220-3
Current - Reverse Leakage @ Vr: 90 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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SBR20E120CT SBR20E120CT Diodes Incorporated SBR20E120CT.pdf Description: DIODE SCHOTTKY 120V 20A TO220AB
Current - Reverse Leakage @ Vr: 90 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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APT13003NZTR-G1 Diodes Incorporated Description: TRANS NPN 900V 1.5A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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74AUP1G57DW-7 74AUP1G57DW-7 Diodes Incorporated 74AUP1G57.pdf Description: IC GATE SGL 3INP MULTIFUN SOT363
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74AUP1G57FZ4-7 74AUP1G57FZ4-7 Diodes Incorporated 74AUP1G57.pdf Description: IC GATE SGL 3INP MULTIF X2-6DFN
Number of Circuits: 1
Supplier Device Package: X2-DFN1410-6
Schmitt Trigger Input: No
Number of Inputs: 3
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Configurable Multiple Function
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74AUP1G57W6-7 74AUP1G57W6-7 Diodes Incorporated 74AUP1G57.pdf Description: IC GATE SGL 3INP MULTIFUN SOT26
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Supplier Device Package: SOT-26
Schmitt Trigger Input: No
Number of Inputs: 3
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Configurable Multiple Function
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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74AUP1G58DW-7 74AUP1G58DW-7 Diodes Incorporated 74AUP1G58.pdf Description: IC GATE SGL 3INP MULTIFUN SOT363
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SBRT4U30LP-7 SBRT4U30LP.pdf
SBRT4U30LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 30V 4A U-DFN2020-2
auf Bestellung 132000 Stücke:
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AnzahlPrivatkunde
3000+0.51 EUR
6000+0.5 EUR
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ZXTR2112F-7 ZXTR2112F.pdf
ZXTR2112F-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 12V 15MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 15mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 360 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 12V
Grade: Automotive
Part Status: Active
PSRR: 50dB (100Hz)
Current - Supply (Max): 6 mA
Qualification: AEC-Q101
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3000+0.26 EUR
6000+0.25 EUR
21000+0.24 EUR
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D3V3L2B3LP10-7 D3V3L2B3LP10.pdf
D3V3L2B3LP10-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 7V X2DFN10103
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DFN1010-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 3.8V
Voltage - Clamping (Max) @ Ipp: 7V
Power - Peak Pulse: 35W
Power Line Protection: No
Part Status: Active
auf Bestellung 250000 Stücke:
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5000+0.18 EUR
10000+0.17 EUR
15000+0.15 EUR
35000+0.14 EUR
125000+0.13 EUR
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D5V0F2B3LP10-7
D5V0F2B3LP10-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12VC X2-DFN1010
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
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AnzahlPrivatkunde
5000+0.2 EUR
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SBR10E45P5-13 SBR10E45P5.pdf
SBR10E45P5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
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5000+0.36 EUR
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SBRT3M60SA-13
SBRT3M60SA-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
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SBRT3U60SA-13
SBRT3U60SA-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 3A SMA
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 3A
Technology: Super Barrier
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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D5V0L1B2DLP3-7 D5V0L1B2DLP3.pdf
D5V0L1B2DLP3-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 14VC X3ESN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: X3-ESN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 84W
Power Line Protection: No
Produkt ist nicht verfügbar
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D5V0M1U2S9-7 D5V0M1U2S9.pdf
D5V0M1U2S9-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12VC SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 54pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 108W
Power Line Protection: No
auf Bestellung 204500 Stücke:
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AnzahlPrivatkunde
10000+0.079 EUR
20000+0.071 EUR
30000+0.068 EUR
50000+0.063 EUR
70000+0.061 EUR
100000+0.058 EUR
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DMP6110SVT-13 DMP6110SVT.pdf
DMP6110SVT-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
Produkt ist nicht verfügbar
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SBRT3U45SAF-13 SBRT3U45SAF.pdf
SBRT3U45SAF-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 3A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
auf Bestellung 140000 Stücke:
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10000+0.15 EUR
20000+0.14 EUR
30000+0.13 EUR
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SBR10E45P5-7 SBR10E45P5.pdf
SBR10E45P5-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
auf Bestellung 7474 Stücke:
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34+0.63 EUR
49+0.43 EUR
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DMP2002UPS-13 DMP2002UPS.pdf
DMP2002UPS-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 60A PWRDI5060-8
Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: PowerDI5060-8 (Type K)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 2.3W (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 12609 Stücke:
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5+4.74 EUR
10+3.55 EUR
100+2.45 EUR
500+2.06 EUR
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DMP6050SSD-13 DMP6050SSD.pdf
DMP6050SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 4.8A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 22326 Stücke:
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AnzahlPrivatkunde
15+1.49 EUR
19+1.14 EUR
100+0.79 EUR
500+0.74 EUR
1000+0.67 EUR
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DMT8012LK3-13 DMT8012LK3.pdf
DMT8012LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 44A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.7W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 210863 Stücke:
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11+1.9 EUR
13+1.62 EUR
100+1.13 EUR
500+0.9 EUR
1000+0.82 EUR
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DMTH8012LK3-13 DMTH8012LK3.pdf
DMTH8012LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 50A TO252
Produkt ist nicht verfügbar
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DMTH8012LPS-13 DMTH8012LPS.pdf
DMTH8012LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 9.5A PWRDI5060-8
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DT6250-06MR-13 DT6250-06MR.pdf
DT6250-06MR-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 10VC 8-MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 8-MSOP
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
auf Bestellung 105872 Stücke:
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15+1.44 EUR
24+0.89 EUR
100+0.57 EUR
500+0.44 EUR
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SBRT10U60D1-13 SBRT10U60D1.pdf
SBRT10U60D1-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 10A TO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
auf Bestellung 40782 Stücke:
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7+3.36 EUR
10+2.13 EUR
100+1.43 EUR
500+1.13 EUR
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D5V0M5B6LP16-7 D5V0M5B6LP16.pdf
D5V0M5B6LP16-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 14VC U-DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: U-DFN1616-6
Bidirectional Channels: 5
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 130W
Power Line Protection: No
auf Bestellung 44845 Stücke:
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27+0.8 EUR
38+0.56 EUR
100+0.29 EUR
500+0.25 EUR
1000+0.19 EUR
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DESD5V0U1BA-7 DESD5V0U1BA.pdf
DESD5V0U1BA-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 7.2VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 7.2V (Typ)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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DMHC10H170SFJ-13 DMHC10H170SFJ.pdf
DMHC10H170SFJ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN
Packaging: Cut Tape (CT)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
auf Bestellung 2953 Stücke:
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6+3.61 EUR
10+2.3 EUR
100+1.54 EUR
500+1.21 EUR
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DMP1011UCB9-7 DMP1011UCB9.pdf
DMP1011UCB9-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 8V 10A U-WLB1515-9
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V
Power Dissipation (Max): 890mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V
auf Bestellung 272753 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.45 EUR
14+1.55 EUR
100+1.02 EUR
500+0.8 EUR
1000+0.73 EUR
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DMP6110SVT-7 DMP6110SVT.pdf
DMP6110SVT-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
auf Bestellung 2547 Stücke:
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13+1.7 EUR
20+1.06 EUR
100+0.69 EUR
500+0.52 EUR
1000+0.48 EUR
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SBRT4U10LP-7 SBRT4U10LP.pdf
SBRT4U10LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 10V 4A U-DFN2020-2
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SBRT4U30LP-7 SBRT4U30LP.pdf
SBRT4U30LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 30V 4A U-DFN2020-2
auf Bestellung 134990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.32 EUR
19+1.17 EUR
100+0.89 EUR
500+0.7 EUR
1000+0.56 EUR
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SBRT6U10LP-7 SBRT6U10LP.pdf
SBRT6U10LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 10V 6A U-DFN3030-8
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SBRT6U20LP-7 SBRT6U20LP.pdf
SBRT6U20LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 20V 6A U-DFN3030-8
auf Bestellung 645 Stücke:
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SBRT6U45LP-7 SBRT6U45LP.pdf
SBRT6U45LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 6A U-DFN3030-8
auf Bestellung 627 Stücke:
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ZXTR2112F-7 ZXTR2112F.pdf
ZXTR2112F-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 12V 15MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 15mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 360 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 12V
Grade: Automotive
Part Status: Active
PSRR: 50dB (100Hz)
Current - Supply (Max): 6 mA
Qualification: AEC-Q101
auf Bestellung 35832 Stücke:
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AnzahlPrivatkunde
34+0.63 EUR
49+0.43 EUR
56+0.38 EUR
100+0.33 EUR
250+0.3 EUR
500+0.29 EUR
1000+0.27 EUR
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AP1695-20CS7-13
AP1695-20CS7-13
Hersteller: Diodes Incorporated
Description: IC LED DRIVER OFFL TRIAC 2A 7SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 2A
Internal Switch(s): Yes
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SO
Dimming: Triac
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 25V
auf Bestellung 3970 Stücke:
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AnzahlPrivatkunde
12+1.87 EUR
13+1.67 EUR
25+1.58 EUR
100+1.3 EUR
250+1.21 EUR
500+1.07 EUR
1000+0.84 EUR
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D3V3L2B3LP10-7 D3V3L2B3LP10.pdf
D3V3L2B3LP10-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 7V X2DFN10103
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DFN1010-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 3.8V
Voltage - Clamping (Max) @ Ipp: 7V
Power - Peak Pulse: 35W
Power Line Protection: No
Part Status: Active
auf Bestellung 252531 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.9 EUR
39+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.24 EUR
2000+0.21 EUR
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D5V0F2B3LP10-7
D5V0F2B3LP10-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12VC X2-DFN1010
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
33+0.64 EUR
100+0.32 EUR
500+0.29 EUR
1000+0.23 EUR
2000+0.2 EUR
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SBR10E45P5-13 SBR10E45P5.pdf
SBR10E45P5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
auf Bestellung 9519 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.3 EUR
24+0.88 EUR
100+0.64 EUR
500+0.49 EUR
1000+0.43 EUR
2000+0.4 EUR
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D5V0L1B2DLP3-7 D5V0L1B2DLP3.pdf
D5V0L1B2DLP3-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 14VC X3ESN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: X3-ESN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 84W
Power Line Protection: No
Produkt ist nicht verfügbar
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D5V0M1U2S9-7 D5V0M1U2S9.pdf
D5V0M1U2S9-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 54pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 108W
Power Line Protection: No
auf Bestellung 206370 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
74+0.29 EUR
119+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
5000+0.087 EUR
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SBRT3U45SAF-13 SBRT3U45SAF.pdf
SBRT3U45SAF-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 3A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
auf Bestellung 141217 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
51+0.42 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.21 EUR
2000+0.2 EUR
5000+0.18 EUR
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DMTH8012LK3-13 DMTH8012LK3.pdf
DMTH8012LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 50A TO252
Produkt ist nicht verfügbar
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DMTH8012LPS-13 DMTH8012LPS.pdf
DMTH8012LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 9.5A PWRDI5060-8
Produkt ist nicht verfügbar
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SBRT4U10LP-7 SBRT4U10LP.pdf
SBRT4U10LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 10V 4A U-DFN2020-2
auf Bestellung 300012000 Stücke:
Lieferzeit 10-14 Tag (e)
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DMN3033LSNQ-13 DMN3033LSNQ.pdf
DMN3033LSNQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 6A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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SBR10E45P5-7D SBR10E45P5.pdf
SBR10E45P5-7D
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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DESD34VS2SO-7 DESD34VS2SO.pdf
DESD34VS2SO-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 34VWM 57VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 34V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36V
Voltage - Clamping (Max) @ Ipp: 57V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.17 EUR
6000+0.15 EUR
9000+0.14 EUR
Mindestbestellmenge: 3000 Stücke
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DMN3015LSD-13 DMN3015LSD.pdf
DMN3015LSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 8.4A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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DMN3027LFG-7 DMN3027LFG.pdf
DMN3027LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.3A PWRDI3333-8
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+0.5 EUR
6000+0.48 EUR
10000+0.44 EUR
Mindestbestellmenge: 2000 Stücke
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SBR1A400P1-7 SBR1A400P1.pdf
SBR1A400P1-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 400V 1A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Super Barrier
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.42 EUR
6000+0.39 EUR
Mindestbestellmenge: 3000 Stücke
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ZXGD3107N8TC ZXGD3107N8.pdf
ZXGD3107N8TC
Hersteller: Diodes Incorporated
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 40V (Max)
Input Type: Non-Inverting
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 175ns, 20ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A, 7A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.9 EUR
Mindestbestellmenge: 2500 Stücke
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DESD34VS2SO-7 DESD34VS2SO.pdf
DESD34VS2SO-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 34VWM 57VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 34V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36V
Voltage - Clamping (Max) @ Ipp: 57V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 57695 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
59+0.36 EUR
100+0.21 EUR
500+0.2 EUR
1000+0.17 EUR
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DMN3015LSD-13 DMN3015LSD.pdf
DMN3015LSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 8.4A 8SO
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
auf Bestellung 1602 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.7 EUR
20+1.06 EUR
100+0.69 EUR
500+0.52 EUR
1000+0.48 EUR
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DMN3027LFG-7 DMN3027LFG.pdf
DMN3027LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.3A PWRDI3333-8
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 18854 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.32 EUR
19+1.13 EUR
100+0.79 EUR
500+0.65 EUR
1000+0.56 EUR
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SBR1A400P1-7 SBR1A400P1.pdf
SBR1A400P1-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 400V 1A POWERDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Super Barrier
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
auf Bestellung 66204 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.36 EUR
25+0.84 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.39 EUR
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ZXGD3107N8TC ZXGD3107N8.pdf
ZXGD3107N8TC
Hersteller: Diodes Incorporated
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 40V (Max)
Input Type: Non-Inverting
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 175ns, 20ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A, 7A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4083 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.9 EUR
16+1.37 EUR
25+1.24 EUR
100+1.09 EUR
250+1.02 EUR
500+0.98 EUR
1000+0.95 EUR
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DMN3027LFG-13 DMN3027LFG.pdf
DMN3027LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.3A PWRDI3333-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SBR20E100CT SBR20E100CT.pdf
SBR20E100CT
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 100V 10A TO220-3
Current - Reverse Leakage @ Vr: 90 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 17650 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+1.13 EUR
Mindestbestellmenge: 50 Stücke
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SBR20E120CT SBR20E120CT.pdf
SBR20E120CT
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 120V 20A TO220AB
Current - Reverse Leakage @ Vr: 90 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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APT13003NZTR-G1
Hersteller: Diodes Incorporated
Description: TRANS NPN 900V 1.5A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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74AUP1G57DW-7 74AUP1G57.pdf
74AUP1G57DW-7
Hersteller: Diodes Incorporated
Description: IC GATE SGL 3INP MULTIFUN SOT363
Produkt ist nicht verfügbar
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74AUP1G57FZ4-7 74AUP1G57.pdf
74AUP1G57FZ4-7
Hersteller: Diodes Incorporated
Description: IC GATE SGL 3INP MULTIF X2-6DFN
Number of Circuits: 1
Supplier Device Package: X2-DFN1410-6
Schmitt Trigger Input: No
Number of Inputs: 3
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Configurable Multiple Function
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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74AUP1G57W6-7 74AUP1G57.pdf
74AUP1G57W6-7
Hersteller: Diodes Incorporated
Description: IC GATE SGL 3INP MULTIFUN SOT26
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Supplier Device Package: SOT-26
Schmitt Trigger Input: No
Number of Inputs: 3
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Configurable Multiple Function
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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74AUP1G58DW-7 74AUP1G58.pdf
74AUP1G58DW-7
Hersteller: Diodes Incorporated
Description: IC GATE SGL 3INP MULTIFUN SOT363
Produkt ist nicht verfügbar
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