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AH1815-Z-7 AH1815-Z-7 Diodes Incorporated AH1815.pdf Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Cut Tape (CT)
Features: Sleep Mode
Package / Case: SOT-553
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±54mT Trip, ±49mT Release
Current - Output (Max): 2.5mA
Current - Supply (Max): 12mA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 125°C
Part Status: Active
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28+0.63 EUR
30+0.59 EUR
50+0.56 EUR
100+0.53 EUR
500+0.48 EUR
1000+0.46 EUR
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AH9486-WUF-7 AH9486-WUF-7 Diodes Incorporated AH9485_86.pdf Description: IC MOTOR DRIVER 2V-6V 6TSOT26F
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: TSOT-26F
Voltage - Load: 2V ~ 6V
Technology: Power MOSFET
Applications: Fan Motor Driver
Voltage - Supply: 2V ~ 6V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 105°C (TA)
Interface: PWM
Current - Output: 300mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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AP1694AS-13 AP1694AS-13 Diodes Incorporated Description: IC LED DRIVER OFFL TRIAC 8SO
Part Status: Obsolete
Voltage - Supply (Max): 25V
Voltage - Supply (Min): 7V
Dimming: Triac
Supplier Device Package: 8-SO
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Applications: Lighting
Operating Temperature: -40°C ~ 105°C (TA)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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AP2138N-3.6TRG1 AP2138N-3.6TRG1 Diodes Incorporated AP2138-9.pdf Description: IC REG LINEAR 3.6V 250MA SOT23-3
Protection Features: Over Current
Voltage Dropout (Max): 0.6V @ 250mA
Voltage - Output (Min/Fixed): 3.6V
Supplier Device Package: SOT-23-3
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 1.5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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1000+0.2 EUR
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APD240VRTR-G1 Diodes Incorporated APD240.pdf Description: DIODE SCHOTTKY 40V 2A DO214AC
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APD340VRTR-G1 APD340VRTR-G1 Diodes Incorporated APD340.pdf Description: DIODE SCHOTTKY 40V 3A DO214AC
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DMN1054UCB4-7 DMN1054UCB4-7 Diodes Incorporated DMN1054UCB4.pdf Description: MOSFET N-CH 8V 2.7A X1-WLB0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: X1-WLB0808-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V
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DMN2005UPS-13 DMN2005UPS-13 Diodes Incorporated DMN2005UPS.pdf Description: MOSFET N-CH 20V 20A POWERDI5060
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5337 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
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DMN3023L-7 DMN3023L-7 Diodes Incorporated DMN3023L.pdf Description: MOSFET N-CH 30V 6.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 15 V
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DMN61D9U-7 DMN61D9U-7 Diodes Incorporated DMN61D9U.pdf Description: MOSFET N-CH 60V 380MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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DMN61D9UDW-7 DMN61D9UDW-7 Diodes Incorporated DMN61D9UDW.pdf Description: MOSFET 2N-CH 60V 0.35A
Produkt ist nicht verfügbar
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DMN62D0U-13 DMN62D0U-13 Diodes Incorporated DMN62D0U.pdf Description: MOSFET N-CH 60V 380MA SOT23
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 380mW (Ta)
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DMN62D0U-7 DMN62D0U-7 Diodes Incorporated DMN62D0U.pdf Description: MOSFET N-CH 60V 380MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
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DMN62D0UDW-7 DMN62D0UDW-7 Diodes Incorporated DMN62D0UDW.pdf Description: MOSFET 2N-CH 60V 0.35A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 350mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 320mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
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DMN62D0UW-7 DMN62D0UW-7 Diodes Incorporated DMN62D0UW.pdf Description: MOSFET N-CH 60V 340MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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DMP32D5SFB-7B DMP32D5SFB-7B Diodes Incorporated DMP32D5SFB.pdf Description: MOSFET P-CH 30V 400MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
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2000+0.18 EUR
5000+0.16 EUR
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DMP6050SFG-7 DMP6050SFG-7 Diodes Incorporated DMP6050SFG.pdf Description: MOSFET P-CH 60V 4.8A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
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DMT10H010LPS-13 DMT10H010LPS-13 Diodes Incorporated DMT10H010LPS.pdf Description: MOSFET N-CH 100V 9.4A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 98A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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DMT6009LFG-7 DMT6009LFG-7 Diodes Incorporated DMT6009LFG.pdf Description: MOSFET N-CH 60V 11A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.08W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
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DMT6010LPS-13 DMT6010LPS-13 Diodes Incorporated DMT6010LPS.pdf Description: MOSFET N-CH 60V 13.5A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
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DMTH6009LK3-13 DMTH6009LK3-13 Diodes Incorporated DMTH6009LK3.pdf Description: MOSFET N-CH 60V 14.2A/59A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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DMTH6010SK3-13 DMTH6010SK3-13 Diodes Incorporated DMTH6010SK3.pdf Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 30 V
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500+0.85 EUR
1000+0.78 EUR
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DT1240V3-04LP-7 DT1240V3-04LP-7 Diodes Incorporated DT1240V3-04LP.pdf Description: TVS DIODE 3.3VWM 8.8V UDFN251010
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: U-DFN2510-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 8.8V
Power - Peak Pulse: 60W
Power Line Protection: Yes
Part Status: Active
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SBR10U45D1-13 SBR10U45D1-13 Diodes Incorporated SBR10U45D1.pdf Description: DIODE SBR 45V 10A TO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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SBR12M120P5-13 SBR12M120P5-13 Diodes Incorporated SBR12M120P5.pdf Description: DIODE SBR 120V 12A POWERDI5
Current - Reverse Leakage @ Vr: 200 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 12A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
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APD240VRTR-G1 Diodes Incorporated APD240.pdf Description: DIODE SCHOTTKY 40V 2A DO214AC
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AH1815-P-A AH1815-P-A Diodes Incorporated AH1815.pdf Description: MAGNETIC SWITCH OMNIPOLAR 3SIP
Part Status: Active
Test Condition: -40°C ~ 125°C
Supplier Device Package: 3-SIP
Current - Supply (Max): 12mA
Current - Output (Max): 2.5mA
Sensing Range: ±54mT Trip, ±49mT Release
Technology: Hall Effect
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Function: Omnipolar Switch
Mounting Type: Through Hole
Polarization: North Pole, South Pole
Output Type: Open Drain
Package / Case: 3-SIP, Formed Leads
Features: Sleep Mode
Packaging: Tape & Box (TB)
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DMG7401SFGQ-13 DMG7401SFGQ-13 Diodes Incorporated DMG7401SFGQ.pdf Description: MOSFET P-CH 30V 9.8A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2987 pF @ 15 V
Qualification: AEC-Q101
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DMP4025SFGQ-13 DMP4025SFGQ-13 Diodes Incorporated DMP4025SFGQ.pdf Description: MOSFET P-CH 40V 7.2A PWRDI3333-8
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 810mW (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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APR34150MTR-G1 APR34150MTR-G1 Diodes Incorporated Description: IC RECT CTLR AC/DC SYNCH 8SOIC
DigiKey Programmable: Not Verified
Current - Supply: 100 µA
Supplier Device Package: 8-SO
Applications: Secondary-Side Controller, Synchronous Rectifier
Voltage - Supply: 3.3V ~ 6V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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APR34150MTR-G1 APR34150MTR-G1 Diodes Incorporated Description: IC RECT CTLR AC/DC SYNCH 8SOIC
DigiKey Programmable: Not Verified
Current - Supply: 100 µA
Supplier Device Package: 8-SO
Applications: Secondary-Side Controller, Synchronous Rectifier
Voltage - Supply: 3.3V ~ 6V
Operating Temperature: -40°C ~ 85°C
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
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DMN61D8LQ-13 DMN61D8LQ-13 Diodes Incorporated DMN61D8LQ.pdf Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
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AP91352MN1-DT8-7 AP91352MN1-DT8-7 Diodes Incorporated AP91352.pdf Description: IC PWR SWITCH N-CHAN 1:1 12WQFN
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 12-WFQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 3.6V ~ 12V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: W-QFN3020-12
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Part Status: Active
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DMN61D8LQ-7 DMN61D8LQ-7 Diodes Incorporated DMN61D8LQ.pdf Description: MOSFET N-CH 60V 470MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 390mW (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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DMN61D8LQ-7 DMN61D8LQ-7 Diodes Incorporated DMN61D8LQ.pdf Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 390mW (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Qualification: AEC-Q101
Grade: Automotive
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DMTH6004SCTB-13 DMTH6004SCTB-13 Diodes Incorporated DMTH6004SCTB.pdf Description: MOSFET N-CH 60V 100A TO263AB
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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WF7021B0622.080000 WF7021B0622.080000 Diodes Incorporated WF702_RevA.pdf Description: XTAL OSC XO 622.0800MHZ LVPECL
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.295" L x 0.197" W (7.50mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±5ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 80mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.098" (2.50mm)
Part Status: Active
Frequency: 622.08 MHz
Base Resonator: Crystal
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HX2127001Q HX2127001Q Diodes Incorporated HX2127001Q_Ver.A.pdf Description: XTAL OSC XO 27.0000MHZ LVCMOS
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HX3124501Q HX3124501Q Diodes Incorporated HX3124501Q_Ver.A.pdf Description: XTAL OSC XO 24.545452MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.8V
Ratings: AEC-Q200
Current - Supply (Max): 20mA
Height - Seated (Max): 0.045" (1.15mm)
Part Status: Active
Frequency: 24.545452 MHz
Base Resonator: Crystal
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HX3125006Q HX3125006Q Diodes Incorporated HX3125006Q_Ver.A.pdf Description: XTAL OSC XO 25.0000MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±30ppm
Voltage - Supply: 3.3V
Ratings: AEC-Q200
Current - Supply (Max): 20mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 25 MHz
Base Resonator: Crystal
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HX3127001Q HX3127001Q Diodes Incorporated HX3127001Q_Ver.01.pdf Description: XTAL OSC XO 27.0000MHZ LVCMOS
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HX31330001 HX31330001 Diodes Incorporated HX31330001_Ver.A.pdf Description: XTAL OSC XO 33.0000MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 90°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 10mA
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 33 MHz
Base Resonator: Crystal
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HX3212F0040.000000 HX3212F0040.000000 Diodes Incorporated HX3212F0040.000000_Ver%20A.pdf Description: XTAL OSC XO 40.0000MHZ LVCMOS
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HX51706001 HX51706001 Diodes Incorporated HX51706001_Ver.A.pdf Description: XTAL OSC XO 70.6560MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 40mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.053" (1.35mm)
Frequency: 70.656 MHz
Base Resonator: Crystal
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AH3772-P-B AH3772-P-B Diodes Incorporated Description: MAGNETIC SWITCH LATCH 3SIP
Polarization: South Pole
Output Type: Open Drain
Package / Case: 3-SIP Module
Features: Temperature Compensated
Packaging: Bulk
Part Status: Active
Test Condition: -40°C ~ 125°C
Supplier Device Package: 3-SIP
Current - Supply (Max): 4mA
Current - Output (Max): 60mA
Sensing Range: 4mT Trip, -4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 125°C (TA)
Function: Latch
Mounting Type: Through Hole
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AH3774-P-B AH3774-P-B Diodes Incorporated AH3774.pdf Description: MAGNETIC SWITCH LATCH 3SIP
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AH3775-P-B AH3775-P-B Diodes Incorporated AH3775.pdf Description: IC HALL LATCH SWITCH SIP-3
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AH3776-P-B AH3776-P-B Diodes Incorporated AH3776.pdf Description: MAGNETIC SWITCH LATCH 3SIP
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AH3777-P-B AH3777-P-B Diodes Incorporated AH3777.pdf Description: MAGNETIC SWITCH LATCH 3SIP
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AH3781-P-B AH3781-P-B Diodes Incorporated Description: MAGNETIC SWITCH LATCH 3SIP
Sensing Range: 4mT Trip, -4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 125°C (TA)
Function: Latch
Mounting Type: Through Hole
Polarization: South Pole
Output Type: Open Drain
Test Condition: -40°C ~ 125°C
Supplier Device Package: 3-SIP
Current - Supply (Max): 5.8mA
Current - Output (Max): 60mA
Package / Case: 3-SIP Module
Features: Temperature Compensated
Packaging: Bulk
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AH3782-P-B AH3782-P-B Diodes Incorporated AH3782.pdf Description: MAGNETIC SWITCH LATCH 3SIP
Test Condition: -40°C ~ 125°C
Supplier Device Package: 3-SIP
Current - Supply (Max): 5.8mA
Current - Output (Max): 60mA
Sensing Range: 6mT Trip, -6mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 125°C (TA)
Function: Latch
Mounting Type: Through Hole
Polarization: South Pole
Output Type: Open Drain
Package / Case: 3-SIP Module
Features: Temperature Compensated
Packaging: Bulk
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DMP4015SPSQ-13 DMP4015SPSQ-13 Diodes Incorporated DMP4015SPSQ.pdf Description: MOSFET P-CH 40V 8.5A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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AL6562AS-13 AL6562AS-13 Diodes Incorporated AL6562A.pdf Description: IC LED DRIVER OFFL 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 8-SO
Voltage - Supply (Min): 10.3V
Voltage - Supply (Max): 22V
Part Status: Active
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AP3127HKTR-G1 AP3127HKTR-G1 Diodes Incorporated Description: IC OFFLINE SWITCH FLYBACK SOT26
Voltage - Start Up: 15.8 V
Fault Protection: Current Limiting, Over Load, Over Voltage
Supplier Device Package: SOT-26
Voltage - Supply (Vcc/Vdd): 10V ~ 28V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AP3127KTR-G1 AP3127KTR-G1 Diodes Incorporated Description: IC OFFLINE SWITCH FLYBACK SOT26
Voltage - Start Up: 15.8 V
Fault Protection: Current Limiting, Over Load, Over Voltage
Supplier Device Package: SOT-26
Voltage - Supply (Vcc/Vdd): 10V ~ 28V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AH3772-SA-7 AH3772-SA-7 Diodes Incorporated Description: MAGNETIC SWITCH LATCH SOT23-3
Test Condition: -40°C ~ 125°C
Supplier Device Package: SOT-23-3
Current - Supply (Max): 4mA
Current - Output (Max): 60mA
Sensing Range: 4mT Trip, -4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 125°C (TA)
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
auf Bestellung 3280 Stücke:
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15+1.23 EUR
19+0.95 EUR
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50+0.79 EUR
100+0.67 EUR
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AH3774-SA-7 AH3774-SA-7 Diodes Incorporated AH3774.pdf Description: MAGNETIC SWITCH LATCH SOT23-3
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AH3774-W-7 AH3774-W-7 Diodes Incorporated AH3774.pdf Description: MAGNETIC SWITCH LATCH SC59
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12+1.53 EUR
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14+1.27 EUR
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AH3775-SA-7 AH3775-SA-7 Diodes Incorporated AH3775.pdf Description: MAGNETIC SWITCH LATCH SOT23-3
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AH3776-SA-7 AH3776-SA-7 Diodes Incorporated AH3776.pdf Description: MAGNETIC SWITCH LATCH SOT23-3
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AH1815-Z-7 AH1815.pdf
AH1815-Z-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Cut Tape (CT)
Features: Sleep Mode
Package / Case: SOT-553
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±54mT Trip, ±49mT Release
Current - Output (Max): 2.5mA
Current - Supply (Max): 12mA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 125°C
Part Status: Active
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23+0.77 EUR
27+0.67 EUR
28+0.63 EUR
30+0.59 EUR
50+0.56 EUR
100+0.53 EUR
500+0.48 EUR
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AH9486-WUF-7 AH9485_86.pdf
AH9486-WUF-7
Hersteller: Diodes Incorporated
Description: IC MOTOR DRIVER 2V-6V 6TSOT26F
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: TSOT-26F
Voltage - Load: 2V ~ 6V
Technology: Power MOSFET
Applications: Fan Motor Driver
Voltage - Supply: 2V ~ 6V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 105°C (TA)
Interface: PWM
Current - Output: 300mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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AP1694AS-13
AP1694AS-13
Hersteller: Diodes Incorporated
Description: IC LED DRIVER OFFL TRIAC 8SO
Part Status: Obsolete
Voltage - Supply (Max): 25V
Voltage - Supply (Min): 7V
Dimming: Triac
Supplier Device Package: 8-SO
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Applications: Lighting
Operating Temperature: -40°C ~ 105°C (TA)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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AP2138N-3.6TRG1 AP2138-9.pdf
AP2138N-3.6TRG1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.6V 250MA SOT23-3
Protection Features: Over Current
Voltage Dropout (Max): 0.6V @ 250mA
Voltage - Output (Min/Fixed): 3.6V
Supplier Device Package: SOT-23-3
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 1.5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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39+0.46 EUR
57+0.31 EUR
65+0.27 EUR
100+0.24 EUR
250+0.22 EUR
500+0.21 EUR
1000+0.2 EUR
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APD240VRTR-G1 APD240.pdf
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A DO214AC
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APD340VRTR-G1 APD340.pdf
APD340VRTR-G1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A DO214AC
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DMN1054UCB4-7 DMN1054UCB4.pdf
DMN1054UCB4-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 8V 2.7A X1-WLB0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: X1-WLB0808-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V
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DMN2005UPS-13 DMN2005UPS.pdf
DMN2005UPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 20A POWERDI5060
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5337 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
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13+1.37 EUR
16+1.12 EUR
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DMN3023L-7 DMN3023L.pdf
DMN3023L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 6.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 15 V
auf Bestellung 1490374 Stücke:
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20+0.88 EUR
33+0.55 EUR
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500+0.26 EUR
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DMN61D9U-7 DMN61D9U.pdf
DMN61D9U-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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DMN61D9UDW-7 DMN61D9UDW.pdf
DMN61D9UDW-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.35A
Produkt ist nicht verfügbar
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DMN62D0U-13 DMN62D0U.pdf
DMN62D0U-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 380mW (Ta)
auf Bestellung 96419 Stücke:
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34+0.53 EUR
50+0.36 EUR
101+0.17 EUR
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DMN62D0U-7 DMN62D0U.pdf
DMN62D0U-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
auf Bestellung 17706 Stücke:
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42+0.42 EUR
70+0.25 EUR
112+0.16 EUR
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DMN62D0UDW-7 DMN62D0UDW.pdf
DMN62D0UDW-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.35A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 350mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 320mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 3384 Stücke:
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AnzahlPreis
35+0.51 EUR
56+0.32 EUR
100+0.2 EUR
500+0.15 EUR
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DMN62D0UW-7 DMN62D0UW.pdf
DMN62D0UW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 340MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 437412 Stücke:
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38+0.48 EUR
54+0.33 EUR
111+0.16 EUR
500+0.13 EUR
1000+0.092 EUR
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DMP32D5SFB-7B DMP32D5SFB.pdf
DMP32D5SFB-7B
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 400MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 11877 Stücke:
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23+0.79 EUR
37+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.18 EUR
5000+0.16 EUR
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DMP6050SFG-7 DMP6050SFG.pdf
DMP6050SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 4.8A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
auf Bestellung 2788 Stücke:
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AnzahlPreis
11+1.65 EUR
18+1.03 EUR
100+0.68 EUR
500+0.52 EUR
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DMT10H010LPS-13 DMT10H010LPS.pdf
DMT10H010LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 9.4A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 98A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 5021 Stücke:
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AnzahlPreis
11+1.67 EUR
15+1.18 EUR
100+1.07 EUR
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DMT6009LFG-7 DMT6009LFG.pdf
DMT6009LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 11A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.08W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 218 Stücke:
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AnzahlPreis
7+2.62 EUR
11+1.66 EUR
100+1.11 EUR
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DMT6010LPS-13 DMT6010LPS.pdf
DMT6010LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 2398 Stücke:
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AnzahlPreis
8+2.48 EUR
12+1.58 EUR
100+1.05 EUR
500+0.82 EUR
1000+0.75 EUR
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DMTH6009LK3-13 DMTH6009LK3.pdf
DMTH6009LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 14.2A/59A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 19305 Stücke:
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7+2.73 EUR
11+1.74 EUR
100+1.17 EUR
500+0.92 EUR
1000+0.84 EUR
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DMTH6010SK3-13 DMTH6010SK3.pdf
DMTH6010SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 30 V
auf Bestellung 11951 Stücke:
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7+2.53 EUR
11+1.61 EUR
100+1.08 EUR
500+0.85 EUR
1000+0.78 EUR
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DT1240V3-04LP-7 DT1240V3-04LP.pdf
DT1240V3-04LP-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 8.8V UDFN251010
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: U-DFN2510-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 8.8V
Power - Peak Pulse: 60W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 11079 Stücke:
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72+0.25 EUR
77+0.23 EUR
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SBR10U45D1-13 SBR10U45D1.pdf
SBR10U45D1-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A TO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
auf Bestellung 2199 Stücke:
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AnzahlPreis
7+2.53 EUR
11+1.6 EUR
100+1.07 EUR
500+0.84 EUR
1000+0.77 EUR
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SBR12M120P5-13 SBR12M120P5.pdf
SBR12M120P5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 120V 12A POWERDI5
Current - Reverse Leakage @ Vr: 200 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 12A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
auf Bestellung 4307 Stücke:
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12+1.58 EUR
17+1.06 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.54 EUR
2000+0.51 EUR
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APD240VRTR-G1 APD240.pdf
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A DO214AC
auf Bestellung 750030000 Stücke:
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AH1815-P-A AH1815.pdf
AH1815-P-A
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR 3SIP
Part Status: Active
Test Condition: -40°C ~ 125°C
Supplier Device Package: 3-SIP
Current - Supply (Max): 12mA
Current - Output (Max): 2.5mA
Sensing Range: ±54mT Trip, ±49mT Release
Technology: Hall Effect
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Function: Omnipolar Switch
Mounting Type: Through Hole
Polarization: North Pole, South Pole
Output Type: Open Drain
Package / Case: 3-SIP, Formed Leads
Features: Sleep Mode
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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DMG7401SFGQ-13 DMG7401SFGQ.pdf
DMG7401SFGQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 9.8A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2987 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMP4025SFGQ-13 DMP4025SFGQ.pdf
DMP4025SFGQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 7.2A PWRDI3333-8
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 810mW (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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APR34150MTR-G1
APR34150MTR-G1
Hersteller: Diodes Incorporated
Description: IC RECT CTLR AC/DC SYNCH 8SOIC
DigiKey Programmable: Not Verified
Current - Supply: 100 µA
Supplier Device Package: 8-SO
Applications: Secondary-Side Controller, Synchronous Rectifier
Voltage - Supply: 3.3V ~ 6V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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APR34150MTR-G1
APR34150MTR-G1
Hersteller: Diodes Incorporated
Description: IC RECT CTLR AC/DC SYNCH 8SOIC
DigiKey Programmable: Not Verified
Current - Supply: 100 µA
Supplier Device Package: 8-SO
Applications: Secondary-Side Controller, Synchronous Rectifier
Voltage - Supply: 3.3V ~ 6V
Operating Temperature: -40°C ~ 85°C
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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DMN61D8LQ-13 DMN61D8LQ.pdf
DMN61D8LQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
auf Bestellung 180000 Stücke:
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AnzahlPreis
10000+0.23 EUR
30000+0.22 EUR
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AP91352MN1-DT8-7 AP91352.pdf
AP91352MN1-DT8-7
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 12WQFN
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 12-WFQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 3.6V ~ 12V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: W-QFN3020-12
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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DMN61D8LQ-7 DMN61D8LQ.pdf
DMN61D8LQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 390mW (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 129000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.25 EUR
6000+0.23 EUR
9000+0.22 EUR
15000+0.21 EUR
21000+0.2 EUR
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DMN61D8LQ-7 DMN61D8LQ.pdf
DMN61D8LQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 390mW (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 130961 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
16+1.13 EUR
26+0.7 EUR
100+0.45 EUR
500+0.34 EUR
1000+0.31 EUR
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DMTH6004SCTB-13 DMTH6004SCTB.pdf
DMTH6004SCTB-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO263AB
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 23190 Stücke:
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AnzahlPreis
5+3.8 EUR
10+3.16 EUR
100+2.51 EUR
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WF7021B0622.080000 WF702_RevA.pdf
WF7021B0622.080000
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 622.0800MHZ LVPECL
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.295" L x 0.197" W (7.50mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±5ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 80mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.098" (2.50mm)
Part Status: Active
Frequency: 622.08 MHz
Base Resonator: Crystal
auf Bestellung 18 Stücke:
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AnzahlPreis
1+41.8 EUR
10+39.01 EUR
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HX2127001Q HX2127001Q_Ver.A.pdf
HX2127001Q
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 27.0000MHZ LVCMOS
Produkt ist nicht verfügbar
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HX3124501Q HX3124501Q_Ver.A.pdf
HX3124501Q
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 24.545452MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.8V
Ratings: AEC-Q200
Current - Supply (Max): 20mA
Height - Seated (Max): 0.045" (1.15mm)
Part Status: Active
Frequency: 24.545452 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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HX3125006Q HX3125006Q_Ver.A.pdf
HX3125006Q
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 25.0000MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±30ppm
Voltage - Supply: 3.3V
Ratings: AEC-Q200
Current - Supply (Max): 20mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 25 MHz
Base Resonator: Crystal
auf Bestellung 2798 Stücke:
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8+2.29 EUR
10+1.98 EUR
50+1.79 EUR
100+1.72 EUR
500+1.56 EUR
1000+1.49 EUR
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HX3127001Q HX3127001Q_Ver.01.pdf
HX3127001Q
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 27.0000MHZ LVCMOS
auf Bestellung 184 Stücke:
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AnzahlPreis
7+2.82 EUR
10+2.69 EUR
50+2.63 EUR
100+2.25 EUR
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HX31330001 HX31330001_Ver.A.pdf
HX31330001
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 33.0000MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 90°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 10mA
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 33 MHz
Base Resonator: Crystal
auf Bestellung 128 Stücke:
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AnzahlPreis
8+2.46 EUR
10+2.35 EUR
50+2.3 EUR
100+1.97 EUR
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HX3212F0040.000000 HX3212F0040.000000_Ver%20A.pdf
HX3212F0040.000000
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 40.0000MHZ LVCMOS
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HX51706001 HX51706001_Ver.A.pdf
HX51706001
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 70.6560MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 40mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.053" (1.35mm)
Frequency: 70.656 MHz
Base Resonator: Crystal
auf Bestellung 128 Stücke:
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AnzahlPreis
5+3.77 EUR
10+3.28 EUR
50+2.97 EUR
100+2.85 EUR
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AH3772-P-B
AH3772-P-B
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH 3SIP
Polarization: South Pole
Output Type: Open Drain
Package / Case: 3-SIP Module
Features: Temperature Compensated
Packaging: Bulk
Part Status: Active
Test Condition: -40°C ~ 125°C
Supplier Device Package: 3-SIP
Current - Supply (Max): 4mA
Current - Output (Max): 60mA
Sensing Range: 4mT Trip, -4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 125°C (TA)
Function: Latch
Mounting Type: Through Hole
auf Bestellung 1016 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
15+1.25 EUR
19+0.95 EUR
25+0.82 EUR
50+0.79 EUR
100+0.67 EUR
500+0.58 EUR
1000+0.51 EUR
Mindestbestellmenge: 15 Stücke
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AH3774-P-B AH3774.pdf
AH3774-P-B
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH 3SIP
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
13+1.37 EUR
15+1.19 EUR
25+1.05 EUR
50+0.87 EUR
100+0.74 EUR
500+0.64 EUR
1000+0.56 EUR
5000+0.5 EUR
Mindestbestellmenge: 13 Stücke
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AH3775-P-B AH3775.pdf
AH3775-P-B
Hersteller: Diodes Incorporated
Description: IC HALL LATCH SWITCH SIP-3
auf Bestellung 93010000 Stücke:
Lieferzeit 10-14 Tag (e)
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AH3776-P-B AH3776.pdf
AH3776-P-B
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH 3SIP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AH3777-P-B AH3777.pdf
AH3777-P-B
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH 3SIP
Produkt ist nicht verfügbar
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AH3781-P-B
AH3781-P-B
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH 3SIP
Sensing Range: 4mT Trip, -4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 125°C (TA)
Function: Latch
Mounting Type: Through Hole
Polarization: South Pole
Output Type: Open Drain
Test Condition: -40°C ~ 125°C
Supplier Device Package: 3-SIP
Current - Supply (Max): 5.8mA
Current - Output (Max): 60mA
Package / Case: 3-SIP Module
Features: Temperature Compensated
Packaging: Bulk
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
14+1.28 EUR
18+0.98 EUR
100+0.69 EUR
1000+0.53 EUR
Mindestbestellmenge: 14 Stücke
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AH3782-P-B AH3782.pdf
AH3782-P-B
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH 3SIP
Test Condition: -40°C ~ 125°C
Supplier Device Package: 3-SIP
Current - Supply (Max): 5.8mA
Current - Output (Max): 60mA
Sensing Range: 6mT Trip, -6mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 125°C (TA)
Function: Latch
Mounting Type: Through Hole
Polarization: South Pole
Output Type: Open Drain
Package / Case: 3-SIP Module
Features: Temperature Compensated
Packaging: Bulk
Produkt ist nicht verfügbar
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DMP4015SPSQ-13 DMP4015SPSQ.pdf
DMP4015SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 8.5A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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AL6562AS-13 AL6562A.pdf
AL6562AS-13
Hersteller: Diodes Incorporated
Description: IC LED DRIVER OFFL 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 8-SO
Voltage - Supply (Min): 10.3V
Voltage - Supply (Max): 22V
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.45 EUR
Mindestbestellmenge: 2500 Stücke
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AP3127HKTR-G1
AP3127HKTR-G1
Hersteller: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK SOT26
Voltage - Start Up: 15.8 V
Fault Protection: Current Limiting, Over Load, Over Voltage
Supplier Device Package: SOT-26
Voltage - Supply (Vcc/Vdd): 10V ~ 28V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AP3127KTR-G1
AP3127KTR-G1
Hersteller: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK SOT26
Voltage - Start Up: 15.8 V
Fault Protection: Current Limiting, Over Load, Over Voltage
Supplier Device Package: SOT-26
Voltage - Supply (Vcc/Vdd): 10V ~ 28V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AH3772-SA-7
AH3772-SA-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH SOT23-3
Test Condition: -40°C ~ 125°C
Supplier Device Package: SOT-23-3
Current - Supply (Max): 4mA
Current - Output (Max): 60mA
Sensing Range: 4mT Trip, -4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 125°C (TA)
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
auf Bestellung 3280 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
15+1.23 EUR
19+0.95 EUR
25+0.82 EUR
50+0.79 EUR
100+0.67 EUR
500+0.58 EUR
1000+0.51 EUR
Mindestbestellmenge: 15 Stücke
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AH3774-SA-7 AH3774.pdf
AH3774-SA-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH SOT23-3
auf Bestellung 176118 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
13+1.41 EUR
14+1.34 EUR
16+1.16 EUR
25+1.02 EUR
50+0.85 EUR
100+0.72 EUR
500+0.63 EUR
1000+0.55 EUR
Mindestbestellmenge: 13 Stücke
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AH3774-W-7 AH3774.pdf
AH3774-W-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH SC59
auf Bestellung 82340 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
12+1.53 EUR
13+1.46 EUR
14+1.27 EUR
25+1.11 EUR
50+0.93 EUR
100+0.79 EUR
500+0.69 EUR
1000+0.6 EUR
Mindestbestellmenge: 12 Stücke
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AH3775-SA-7 AH3775.pdf
AH3775-SA-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH SOT23-3
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
13+1.41 EUR
14+1.34 EUR
16+1.16 EUR
25+1.02 EUR
50+0.85 EUR
100+0.72 EUR
Mindestbestellmenge: 13 Stücke
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AH3776-SA-7 AH3776.pdf
AH3776-SA-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH SOT23-3
auf Bestellung 1658 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
13+1.36 EUR
15+1.18 EUR
25+1.04 EUR
50+0.86 EUR
100+0.74 EUR
500+0.64 EUR
1000+0.56 EUR
Mindestbestellmenge: 13 Stücke
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