Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (78505) > Seite 386 nach 1309
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PI3DPX1203BZLEX | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 32-WFQFN Exposed Pad Number of Channels: 4 Mounting Type: Surface Mount Output: DisplayPort Type: Buffer, ReDriver Input: DisplayPort Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Applications: DisplayPort Current - Supply: 243mA Data Rate (Max): 8.1Gbps Supplier Device Package: 32-TQFN (3x6) Signal Conditioning: Input Equalization Part Status: Active |
auf Bestellung 37299 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC2038LVTQ-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 2.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V, 705pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V, 74mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V, 10nC @ 4.5V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-23-6 Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 15410 Stücke: Lieferzeit 10-14 Tag (e) |
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PI4IOE5V96248ZLEX | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 56-WFQFN Exposed Pad Output Type: Push-Pull Mounting Type: Surface Mount Interface: I2C Number of I/O: 48 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 5.5V Clock Frequency: 1 MHz Interrupt Output: Yes Supplier Device Package: 56-TQFN (7x7) Current - Output Source/Sink: 42mA, 480µA Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 4780 Stücke: Lieferzeit 10-14 Tag (e) |
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D15V0M1U2LP3-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 19pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 15V (Max) Supplier Device Package: X3-DFN0603-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.5V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 75W Power Line Protection: No Part Status: Active |
auf Bestellung 260000 Stücke: Lieferzeit 10-14 Tag (e) |
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DBF2510-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DBF Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DMC3025LSDQ-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 477500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4822SSDQ-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 582500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6050SPS-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 1.3W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V |
auf Bestellung 350000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4011SPD-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4011SPDQ-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH43M8LPSQ-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4237500 Stücke: Lieferzeit 10-14 Tag (e) |
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D15V0M1U2LP3-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 19pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 15V (Max) Supplier Device Package: X3-DFN0603-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.5V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 75W Power Line Protection: No Part Status: Active |
auf Bestellung 263736 Stücke: Lieferzeit 10-14 Tag (e) |
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DBF2510-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DBF Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 444 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC3025LSDQ-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 480161 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4822SSDQ-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 589853 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6050SPS-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 1.3W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V |
auf Bestellung 352480 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4011SPD-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4474 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4011SPDQ-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5465 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH43M8LPSQ-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4239629 Stücke: Lieferzeit 10-14 Tag (e) |
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PI4IOE5V96224ZLEX | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Features: POR Package / Case: 32-WFQFN Exposed Pad Output Type: Push-Pull Mounting Type: Surface Mount Interface: I²C, SMBus Number of I/O: 24 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 5.5V Clock Frequency: 1 MHz Interrupt Output: Yes Supplier Device Package: 32-TQFN (3x6) Current - Output Source/Sink: 25mA Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 10157 Stücke: Lieferzeit 10-14 Tag (e) |
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PI3WVR13412ZHEX | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Features: HDMI Package / Case: 42-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Applications: DisplayPort -3db Bandwidth: 7GHz Supplier Device Package: 42-TQFN (9x3.5) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Active Number of Channels: 4 |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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PI3WVR13612ZLEX | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Features: HDMI Package / Case: 52-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Applications: DisplayPort -3db Bandwidth: 7GHz Supplier Device Package: 52-TQFN (3.5x9) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Active Number of Channels: 4 |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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PI3WVR13412ZHEX | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Features: HDMI Package / Case: 42-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Applications: DisplayPort -3db Bandwidth: 7GHz Supplier Device Package: 42-TQFN (9x3.5) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Active Number of Channels: 4 |
auf Bestellung 19374 Stücke: Lieferzeit 10-14 Tag (e) |
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PI3WVR13612ZLEX | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Features: HDMI Package / Case: 52-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Applications: DisplayPort -3db Bandwidth: 7GHz Supplier Device Package: 52-TQFN (3.5x9) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Active Number of Channels: 4 |
auf Bestellung 17903 Stücke: Lieferzeit 10-14 Tag (e) |
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ADTC114YUAQ-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 330 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
auf Bestellung 94360 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR421UFDQ-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Voltage - Output: 40V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -55°C ~ 150°C (TJ) Applications: Lighting, Signage Current - Output / Channel: 350mA Internal Switch(s): No Supplier Device Package: U-DFN2020-6 Dimming: PWM Voltage - Supply (Max): 18V Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 519664 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP1009UFDF-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V |
auf Bestellung 64050 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3013SFV-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V |
auf Bestellung 231144 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP34M4SPS-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 1.5W Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V |
auf Bestellung 2236311 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4065SQ-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V |
auf Bestellung 5736 Stücke: Lieferzeit 10-14 Tag (e) |
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DPD13AWF-7 | Diodes Incorporated | Description: TVS DIODES 13VWM 21.5VC SOD123F |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HDS10M-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: HDS Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 72315 Stücke: Lieferzeit 10-14 Tag (e) |
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LBS10-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: T-DFN5564-4 Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PI3DPX1202A2ZBEX | Diodes Incorporated |
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auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PI3PCIE3412AZHEX | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Features: Bi-Directional, SATA, USB 3.0 Package / Case: 42-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Applications: PCI Express® On-State Resistance (Max): 5Ohm (Typ) -3db Bandwidth: 8.2GHz Supplier Device Package: 42-TQFN (9x3.5) Voltage - Supply, Single (V+): 3V ~ 3.6V Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Active Number of Channels: 4 |
auf Bestellung 20283 Stücke: Lieferzeit 10-14 Tag (e) |
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PI3PCIE3412AZLEX | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Features: Bi-Directional, SATA, USB 3.0 Package / Case: 40-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Applications: PCI Express® On-State Resistance (Max): 5Ohm (Typ) -3db Bandwidth: 8.2GHz Supplier Device Package: 40-TQFN (3x6) Voltage - Supply, Single (V+): 3V ~ 3.6V Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 4 |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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PI4IOE5V6408ZTAEX | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 16-UFQFN Output Type: Push-Pull Mounting Type: Surface Mount Interface: I2C Number of I/O: 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Clock Frequency: 1 MHz Interrupt Output: Yes Supplier Device Package: 16-UQFN (1.8x2.6) Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 575040 Stücke: Lieferzeit 10-14 Tag (e) |
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PI4IOE5V9535ZDEX | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C Number of I/O: 16 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 5.5V Clock Frequency: 400 kHz Interrupt Output: Yes Supplier Device Package: 24-TQFN (4x4) Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 52105 Stücke: Lieferzeit 10-14 Tag (e) |
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PI6CG15401ZHIEX | Diodes Incorporated |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PI7C9X752FAEX | Diodes Incorporated |
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auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PI7C9X794FCEX | Diodes Incorporated |
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auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PT7C433833AZEEX | Diodes Incorporated |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SDT30B100D1-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 30A Supplier Device Package: TO-252-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A Current - Reverse Leakage @ Vr: 120 µA @ 100 V |
auf Bestellung 41557 Stücke: Lieferzeit 10-14 Tag (e) |
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DPD13AWF-7 | Diodes Incorporated | Description: TVS DIODES 13VWM 21.5VC SOD123F |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PI6CB18200ZDIEX | Diodes Incorporated |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ZXMN6A08GQTC | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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PI3DPX1205AZLBEX | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 40-WFQFN Exposed Pad Number of Channels: 6 Mounting Type: Surface Mount Output: DisplayPort Type: Buffer, ReDriver Input: DisplayPort Voltage - Supply: 3.3V Applications: DisplayPort Data Rate (Max): 10Gbps Supplier Device Package: 40-TQFN (4x6) Signal Conditioning: Input Equalization |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PI3HDX231ZLEX | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 72-WFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C Applications: HDMI Redriver, Level Shifter Supplier Device Package: 72-TQFN (11x5) Part Status: Active |
auf Bestellung 93980 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTP56020FDBQ-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 405mW Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V Supplier Device Package: U-DFN2020-6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 201000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTP56020FDBQ-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 405mW Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V Supplier Device Package: U-DFN2020-6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 203906 Stücke: Lieferzeit 10-14 Tag (e) |
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PI3EQX1004B1ZHEX | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 42-VFQFN Exposed Pad Number of Channels: 4 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Operating Temperature: 125°C (TJ) Voltage - Supply: 3V ~ 3.6V Applications: USB 3.0 Data Rate (Max): 10Gbps Supplier Device Package: 42-TQFN (9x3.5) Signal Conditioning: Input Equalization Part Status: Active |
auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
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PI3EQX1004B1ZHEX | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 42-VFQFN Exposed Pad Number of Channels: 4 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Operating Temperature: 125°C (TJ) Voltage - Supply: 3V ~ 3.6V Applications: USB 3.0 Data Rate (Max): 10Gbps Supplier Device Package: 42-TQFN (9x3.5) Signal Conditioning: Input Equalization Part Status: Active |
auf Bestellung 6028 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN61D9UWQ-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Power Dissipation (Max): 440mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 14076478 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3028LPSQ-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Power Dissipation (Max): 1.28W Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 366422 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT36M1LPS-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V |
auf Bestellung 179652 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH6002LPS-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 167W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 30 V |
auf Bestellung 107594 Stücke: Lieferzeit 10-14 Tag (e) |
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PDS4200HQ-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Schottky Current - Average Rectified (Io): 4A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 170914 Stücke: Lieferzeit 10-14 Tag (e) |
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PI3DPX1203ZHEX | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 42-VFQFN Exposed Pad Number of Channels: 4 Mounting Type: Surface Mount Output: DisplayPort Type: Buffer, ReDriver Input: DisplayPort Voltage - Supply: 3.3V Applications: DisplayPort Data Rate (Max): 8Gbps Supplier Device Package: 42-TQFN (9x3.5) Signal Conditioning: Input Equalization |
auf Bestellung 13772 Stücke: Lieferzeit 10-14 Tag (e) |
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PI3USB32212ZLEX | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Features: USB 2.0, USB 3.0 Package / Case: 32-WFQFN Exposed Pad Mounting Type: Surface Mount Applications: USB On-State Resistance (Max): 13Ohm -3db Bandwidth: 10.6GHz Supplier Device Package: 32-TQFN (3x6) Voltage - Supply, Single (V+): 2.97V ~ 3.63V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 1:2 Part Status: Active Number of Channels: 2 |
auf Bestellung 30829 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTR2105FF-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Output Type: Fixed Mounting Type: Surface Mount Current - Output: 89mA Operating Temperature: -65°C ~ 150°C (TJ) Output Configuration: Positive Voltage - Input (Max): 60V Number of Regulators: 1 Supplier Device Package: SOT-23F Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 46dB (100Hz) Current - Supply (Max): 6.7 mA Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1793120 Stücke: Lieferzeit 10-14 Tag (e) |
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PI3DPX1203BZLEX |
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Hersteller: Diodes Incorporated
Description: ACTIVE DISPLAY W-QFN3060-32 T&R
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Applications: DisplayPort
Current - Supply: 243mA
Data Rate (Max): 8.1Gbps
Supplier Device Package: 32-TQFN (3x6)
Signal Conditioning: Input Equalization
Part Status: Active
Description: ACTIVE DISPLAY W-QFN3060-32 T&R
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Applications: DisplayPort
Current - Supply: 243mA
Data Rate (Max): 8.1Gbps
Supplier Device Package: 32-TQFN (3x6)
Signal Conditioning: Input Equalization
Part Status: Active
auf Bestellung 37299 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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3+ | 5.90 EUR |
10+ | 3.77 EUR |
25+ | 3.22 EUR |
100+ | 2.59 EUR |
250+ | 2.29 EUR |
500+ | 2.10 EUR |
1000+ | 1.94 EUR |
DMC2038LVTQ-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 3.7A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V, 705pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V, 74mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V, 10nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 20V 3.7A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V, 705pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V, 74mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V, 10nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15410 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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19+ | 0.93 EUR |
31+ | 0.58 EUR |
100+ | 0.31 EUR |
500+ | 0.28 EUR |
1000+ | 0.25 EUR |
PI4IOE5V96248ZLEX |
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Hersteller: Diodes Incorporated
Description: IC XPNDR 1MHZ I2C 56TQFN
Packaging: Cut Tape (CT)
Package / Case: 56-WFQFN Exposed Pad
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 48
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 56-TQFN (7x7)
Current - Output Source/Sink: 42mA, 480µA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 1MHZ I2C 56TQFN
Packaging: Cut Tape (CT)
Package / Case: 56-WFQFN Exposed Pad
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 48
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 56-TQFN (7x7)
Current - Output Source/Sink: 42mA, 480µA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4780 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 4.21 EUR |
10+ | 3.77 EUR |
25+ | 3.57 EUR |
100+ | 3.09 EUR |
250+ | 2.93 EUR |
500+ | 2.63 EUR |
1000+ | 2.22 EUR |
D15V0M1U2LP3-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 15VWM 24V X3DFN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 19pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: X3-DFN0603-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.5V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 75W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 15VWM 24V X3DFN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 19pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: X3-DFN0603-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.5V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 75W
Power Line Protection: No
Part Status: Active
auf Bestellung 260000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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10000+ | 0.06 EUR |
20000+ | 0.05 EUR |
DBF2510-13 |
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Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBF
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBF
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC3025LSDQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 6.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 477500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.43 EUR |
5000+ | 0.40 EUR |
7500+ | 0.38 EUR |
DMG4822SSDQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 582500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.55 EUR |
5000+ | 0.51 EUR |
7500+ | 0.49 EUR |
12500+ | 0.48 EUR |
DMP6050SPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
auf Bestellung 350000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.46 EUR |
5000+ | 0.42 EUR |
7500+ | 0.41 EUR |
12500+ | 0.39 EUR |
DMTH4011SPD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.51 EUR |
DMTH4011SPDQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.71 EUR |
5000+ | 0.66 EUR |
DMTH43M8LPSQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 22A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 22A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4237500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.80 EUR |
5000+ | 0.78 EUR |
D15V0M1U2LP3-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 15VWM 24V X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 19pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: X3-DFN0603-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.5V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 75W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 15VWM 24V X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 19pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: X3-DFN0603-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.5V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 75W
Power Line Protection: No
Part Status: Active
auf Bestellung 263736 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
63+ | 0.28 EUR |
91+ | 0.19 EUR |
256+ | 0.07 EUR |
500+ | 0.07 EUR |
1000+ | 0.06 EUR |
5000+ | 0.06 EUR |
DBF2510-13 |
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Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBF
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBF
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 444 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 0.84 EUR |
25+ | 0.73 EUR |
100+ | 0.50 EUR |
DMC3025LSDQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 6.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 480161 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 1.69 EUR |
17+ | 1.06 EUR |
100+ | 0.69 EUR |
500+ | 0.54 EUR |
1000+ | 0.48 EUR |
DMG4822SSDQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 589853 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 1.41 EUR |
15+ | 1.22 EUR |
100+ | 0.84 EUR |
500+ | 0.70 EUR |
1000+ | 0.60 EUR |
DMP6050SPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
auf Bestellung 352480 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 1.81 EUR |
16+ | 1.13 EUR |
100+ | 0.74 EUR |
500+ | 0.57 EUR |
1000+ | 0.52 EUR |
DMTH4011SPD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4474 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 1.99 EUR |
15+ | 1.24 EUR |
100+ | 0.82 EUR |
500+ | 0.63 EUR |
1000+ | 0.58 EUR |
DMTH4011SPDQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5465 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.62 EUR |
11+ | 1.63 EUR |
100+ | 1.06 EUR |
500+ | 0.84 EUR |
1000+ | 0.77 EUR |
DMTH43M8LPSQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 22A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 22A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4239629 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.39 EUR |
10+ | 1.78 EUR |
100+ | 1.22 EUR |
500+ | 1.01 EUR |
1000+ | 0.92 EUR |
PI4IOE5V96224ZLEX |
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Hersteller: Diodes Incorporated
Description: IC XPNDR 1MHZ I2C SMBUS 32TQFN
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 32-WFQFN Exposed Pad
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I²C, SMBus
Number of I/O: 24
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 32-TQFN (3x6)
Current - Output Source/Sink: 25mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 1MHZ I2C SMBUS 32TQFN
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 32-WFQFN Exposed Pad
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I²C, SMBus
Number of I/O: 24
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 32-TQFN (3x6)
Current - Output Source/Sink: 25mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 10157 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 3.68 EUR |
10+ | 3.30 EUR |
25+ | 3.11 EUR |
100+ | 2.65 EUR |
250+ | 2.49 EUR |
500+ | 2.18 EUR |
1000+ | 1.80 EUR |
PI3WVR13412ZHEX |
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Hersteller: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN3590-42
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
Description: DISPLAY SWITCH V-QFN3590-42
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3500+ | 1.20 EUR |
PI3WVR13612ZLEX |
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Hersteller: Diodes Incorporated
Description: DISPLAY SWITCH W-QFN3590-52
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 52-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 52-TQFN (3.5x9)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
Description: DISPLAY SWITCH W-QFN3590-52
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 52-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 52-TQFN (3.5x9)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3500+ | 1.22 EUR |
PI3WVR13412ZHEX |
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Hersteller: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN3590-42
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
Description: DISPLAY SWITCH V-QFN3590-42
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
auf Bestellung 19374 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 4.36 EUR |
10+ | 2.75 EUR |
25+ | 2.33 EUR |
100+ | 1.85 EUR |
250+ | 1.62 EUR |
500+ | 1.47 EUR |
1000+ | 1.35 EUR |
PI3WVR13612ZLEX |
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Hersteller: Diodes Incorporated
Description: DISPLAY SWITCH W-QFN3590-52
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 52-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 52-TQFN (3.5x9)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
Description: DISPLAY SWITCH W-QFN3590-52
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 52-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 52-TQFN (3.5x9)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
auf Bestellung 17903 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 4.33 EUR |
10+ | 2.73 EUR |
25+ | 2.32 EUR |
100+ | 1.85 EUR |
250+ | 1.62 EUR |
500+ | 1.47 EUR |
1000+ | 1.35 EUR |
ADTC114YUAQ-7 |
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Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 0.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 0.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 94360 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 0.35 EUR |
82+ | 0.22 EUR |
133+ | 0.13 EUR |
500+ | 0.10 EUR |
1000+ | 0.09 EUR |
BCR421UFDQ-7 |
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Hersteller: Diodes Incorporated
Description: IC LED DRVR LIN PWM 350MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 350mA
Internal Switch(s): No
Supplier Device Package: U-DFN2020-6
Dimming: PWM
Voltage - Supply (Max): 18V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: IC LED DRVR LIN PWM 350MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 350mA
Internal Switch(s): No
Supplier Device Package: U-DFN2020-6
Dimming: PWM
Voltage - Supply (Max): 18V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 519664 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 1.39 EUR |
21+ | 0.84 EUR |
26+ | 0.70 EUR |
100+ | 0.53 EUR |
250+ | 0.45 EUR |
500+ | 0.40 EUR |
1000+ | 0.36 EUR |
DMP1009UFDF-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 15A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
Description: MOSFET P-CH 12V 15A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
auf Bestellung 64050 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 0.77 EUR |
32+ | 0.55 EUR |
100+ | 0.40 EUR |
500+ | 0.35 EUR |
1000+ | 0.32 EUR |
DMP3013SFV-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 12A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V
Description: MOSFET P-CH 30V 12A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V
auf Bestellung 231144 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 0.88 EUR |
31+ | 0.58 EUR |
100+ | 0.48 EUR |
500+ | 0.40 EUR |
1000+ | 0.36 EUR |
DMP34M4SPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 135A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
Description: MOSFET P-CH 30V 135A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
auf Bestellung 2236311 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.25 EUR |
12+ | 1.58 EUR |
100+ | 1.15 EUR |
500+ | 0.91 EUR |
1000+ | 0.83 EUR |
DMP4065SQ-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 2.4A SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
Description: MOSFET P-CH 40V 2.4A SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
auf Bestellung 5736 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 0.81 EUR |
26+ | 0.69 EUR |
100+ | 0.48 EUR |
500+ | 0.37 EUR |
1000+ | 0.30 EUR |
DPD13AWF-7 |
Hersteller: Diodes Incorporated
Description: TVS DIODES 13VWM 21.5VC SOD123F
Description: TVS DIODES 13VWM 21.5VC SOD123F
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
HDS10M-13 |
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Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 1A HDS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HDS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 1A HDS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HDS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 72315 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
28+ | 0.63 EUR |
46+ | 0.39 EUR |
100+ | 0.25 EUR |
500+ | 0.17 EUR |
1000+ | 0.15 EUR |
LBS10-13 |
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Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1P 1KV 1A DFN5564-4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: T-DFN5564-4
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 1A DFN5564-4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: T-DFN5564-4
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PI3DPX1202A2ZBEX |
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Hersteller: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN7070-48 T&R
Description: DISPLAY SWITCH V-QFN7070-48 T&R
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
PI3PCIE3412AZHEX |
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Hersteller: Diodes Incorporated
Description: PCI SWITCH 2:1 4 CHAN 42TQFN
Packaging: Cut Tape (CT)
Features: Bi-Directional, SATA, USB 3.0
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCI Express®
On-State Resistance (Max): 5Ohm (Typ)
-3db Bandwidth: 8.2GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
Description: PCI SWITCH 2:1 4 CHAN 42TQFN
Packaging: Cut Tape (CT)
Features: Bi-Directional, SATA, USB 3.0
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCI Express®
On-State Resistance (Max): 5Ohm (Typ)
-3db Bandwidth: 8.2GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
auf Bestellung 20283 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.75 EUR |
10+ | 3.02 EUR |
25+ | 2.56 EUR |
100+ | 2.05 EUR |
250+ | 1.80 EUR |
500+ | 1.64 EUR |
1000+ | 1.52 EUR |
PI3PCIE3412AZLEX |
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Hersteller: Diodes Incorporated
Description: PCIE SWITCH W-QFN3060-40 T&R 3.5
Packaging: Cut Tape (CT)
Features: Bi-Directional, SATA, USB 3.0
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCI Express®
On-State Resistance (Max): 5Ohm (Typ)
-3db Bandwidth: 8.2GHz
Supplier Device Package: 40-TQFN (3x6)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
Description: PCIE SWITCH W-QFN3060-40 T&R 3.5
Packaging: Cut Tape (CT)
Features: Bi-Directional, SATA, USB 3.0
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCI Express®
On-State Resistance (Max): 5Ohm (Typ)
-3db Bandwidth: 8.2GHz
Supplier Device Package: 40-TQFN (3x6)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.58 EUR |
PI4IOE5V6408ZTAEX |
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Hersteller: Diodes Incorporated
Description: IC XPNDR 1MHZ I2C 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 16-UQFN (1.8x2.6)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 1MHZ I2C 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 16-UQFN (1.8x2.6)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 575040 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.39 EUR |
13+ | 1.46 EUR |
25+ | 1.22 EUR |
100+ | 0.95 EUR |
250+ | 0.81 EUR |
500+ | 0.73 EUR |
1000+ | 0.66 EUR |
PI4IOE5V9535ZDEX |
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Hersteller: Diodes Incorporated
Description: IC XPNDR 400KHZ I2C 24TQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 24-TQFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 400KHZ I2C 24TQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 24-TQFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 52105 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.43 EUR |
10+ | 2.18 EUR |
25+ | 2.06 EUR |
100+ | 1.76 EUR |
250+ | 1.65 EUR |
500+ | 1.44 EUR |
1000+ | 1.20 EUR |
PI6CG15401ZHIEX |
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Hersteller: Diodes Incorporated
Description: IC CLOCK GENERATOR 32TQFN
Description: IC CLOCK GENERATOR 32TQFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PI7C9X752FAEX |
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Hersteller: Diodes Incorporated
Description: IC BRIDGE DUAL UART 48TQFP
Description: IC BRIDGE DUAL UART 48TQFP
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
PI7C9X794FCEX |
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Hersteller: Diodes Incorporated
Description: IC BRIDGE QUAD UART 64LQFP
Description: IC BRIDGE QUAD UART 64LQFP
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
PT7C433833AZEEX |
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Hersteller: Diodes Incorporated
Description: IC RTC MOD LOW POWER 8TDFN
Description: IC RTC MOD LOW POWER 8TDFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SDT30B100D1-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 30A TO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Description: DIODE SCHOTTKY 100V 30A TO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
auf Bestellung 41557 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 1.21 EUR |
22+ | 0.80 EUR |
100+ | 0.65 EUR |
500+ | 0.50 EUR |
1000+ | 0.45 EUR |
DPD13AWF-7 |
Hersteller: Diodes Incorporated
Description: TVS DIODES 13VWM 21.5VC SOD123F
Description: TVS DIODES 13VWM 21.5VC SOD123F
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
PI6CB18200ZDIEX |
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Hersteller: Diodes Incorporated
Description: CLOCK BUFFER,V-QFN4040-24
Description: CLOCK BUFFER,V-QFN4040-24
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ZXMN6A08GQTC |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 3.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 3.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.53 EUR |
8000+ | 0.50 EUR |
PI3DPX1205AZLBEX |
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Hersteller: Diodes Incorporated
Description: ACTIVE DISPLAY W-QFN3060-40 T&R
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Number of Channels: 6
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Voltage - Supply: 3.3V
Applications: DisplayPort
Data Rate (Max): 10Gbps
Supplier Device Package: 40-TQFN (4x6)
Signal Conditioning: Input Equalization
Description: ACTIVE DISPLAY W-QFN3060-40 T&R
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Number of Channels: 6
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Voltage - Supply: 3.3V
Applications: DisplayPort
Data Rate (Max): 10Gbps
Supplier Device Package: 40-TQFN (4x6)
Signal Conditioning: Input Equalization
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PI3HDX231ZLEX |
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Hersteller: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 72TQFN
Packaging: Cut Tape (CT)
Package / Case: 72-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Applications: HDMI Redriver, Level Shifter
Supplier Device Package: 72-TQFN (11x5)
Part Status: Active
Description: IC INTERFACE SPECIALIZED 72TQFN
Packaging: Cut Tape (CT)
Package / Case: 72-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Applications: HDMI Redriver, Level Shifter
Supplier Device Package: 72-TQFN (11x5)
Part Status: Active
auf Bestellung 93980 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.74 EUR |
10+ | 5.15 EUR |
25+ | 4.87 EUR |
100+ | 4.22 EUR |
250+ | 4.00 EUR |
500+ | 3.59 EUR |
1000+ | 3.03 EUR |
ZXTP56020FDBQ-7 |
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Hersteller: Diodes Incorporated
Description: TRANS 2PNP 20V 2A U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Supplier Device Package: U-DFN2020-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2PNP 20V 2A U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Supplier Device Package: U-DFN2020-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 201000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.33 EUR |
6000+ | 0.31 EUR |
9000+ | 0.29 EUR |
ZXTP56020FDBQ-7 |
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Hersteller: Diodes Incorporated
Description: TRANS 2PNP 20V 2A U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Supplier Device Package: U-DFN2020-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2PNP 20V 2A U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Supplier Device Package: U-DFN2020-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 203906 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 0.99 EUR |
21+ | 0.84 EUR |
100+ | 0.58 EUR |
500+ | 0.46 EUR |
1000+ | 0.37 EUR |
PI3EQX1004B1ZHEX |
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Hersteller: Diodes Incorporated
Description: USB3 EQX V-QFN3590-42
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 125°C (TJ)
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Active
Description: USB3 EQX V-QFN3590-42
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 125°C (TJ)
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Active
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3500+ | 2.13 EUR |
PI3EQX1004B1ZHEX |
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Hersteller: Diodes Incorporated
Description: USB3 EQX V-QFN3590-42
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 125°C (TJ)
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Active
Description: USB3 EQX V-QFN3590-42
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 125°C (TJ)
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Active
auf Bestellung 6028 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 6.44 EUR |
10+ | 4.15 EUR |
25+ | 3.55 EUR |
100+ | 2.88 EUR |
250+ | 2.55 EUR |
500+ | 2.34 EUR |
1000+ | 2.17 EUR |
DMN61D9UWQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 400MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 440mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 400MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 440mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14076478 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 0.35 EUR |
73+ | 0.24 EUR |
110+ | 0.16 EUR |
500+ | 0.12 EUR |
1000+ | 0.11 EUR |
2000+ | 0.10 EUR |
5000+ | 0.09 EUR |
DMP3028LPSQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 21A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.28W
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 21A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.28W
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 366422 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 1.57 EUR |
15+ | 1.22 EUR |
100+ | 0.84 EUR |
500+ | 0.67 EUR |
1000+ | 0.62 EUR |
DMT36M1LPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 65A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Description: MOSFET N-CH 30V 65A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
auf Bestellung 179652 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 0.86 EUR |
27+ | 0.66 EUR |
100+ | 0.45 EUR |
500+ | 0.38 EUR |
1000+ | 0.34 EUR |
DMTH6002LPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 167W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 30 V
Description: MOSFET N-CH 60V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 167W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 30 V
auf Bestellung 107594 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.41 EUR |
10+ | 2.27 EUR |
100+ | 1.59 EUR |
500+ | 1.36 EUR |
1000+ | 1.34 EUR |
PDS4200HQ-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 4A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 200V 4A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 170914 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 1.51 EUR |
18+ | 1.02 EUR |
100+ | 0.71 EUR |
500+ | 0.56 EUR |
1000+ | 0.52 EUR |
2000+ | 0.48 EUR |
PI3DPX1203ZHEX |
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Hersteller: Diodes Incorporated
Description: IC REDRIVER 8GBPS 42TQFN
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Voltage - Supply: 3.3V
Applications: DisplayPort
Data Rate (Max): 8Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Description: IC REDRIVER 8GBPS 42TQFN
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Voltage - Supply: 3.3V
Applications: DisplayPort
Data Rate (Max): 8Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
auf Bestellung 13772 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.20 EUR |
10+ | 2.87 EUR |
25+ | 2.72 EUR |
100+ | 2.35 EUR |
250+ | 2.23 EUR |
500+ | 2.13 EUR |
PI3USB32212ZLEX |
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Hersteller: Diodes Incorporated
Description: USB3 SWITCH W-QFN3060-32 T&R 3.5
Packaging: Cut Tape (CT)
Features: USB 2.0, USB 3.0
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Applications: USB
On-State Resistance (Max): 13Ohm
-3db Bandwidth: 10.6GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 2.97V ~ 3.63V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Part Status: Active
Number of Channels: 2
Description: USB3 SWITCH W-QFN3060-32 T&R 3.5
Packaging: Cut Tape (CT)
Features: USB 2.0, USB 3.0
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Applications: USB
On-State Resistance (Max): 13Ohm
-3db Bandwidth: 10.6GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 2.97V ~ 3.63V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Part Status: Active
Number of Channels: 2
auf Bestellung 30829 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 6.07 EUR |
10+ | 3.88 EUR |
25+ | 3.31 EUR |
100+ | 2.67 EUR |
250+ | 2.35 EUR |
500+ | 2.16 EUR |
1000+ | 1.99 EUR |
ZXTR2105FF-7 |
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Hersteller: Diodes Incorporated
Description: IC REG LINEAR 5V 89MA SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 89mA
Operating Temperature: -65°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23F
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 46dB (100Hz)
Current - Supply (Max): 6.7 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 89MA SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 89mA
Operating Temperature: -65°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23F
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 46dB (100Hz)
Current - Supply (Max): 6.7 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1793120 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 1.09 EUR |
27+ | 0.66 EUR |
33+ | 0.54 EUR |
100+ | 0.41 EUR |
250+ | 0.34 EUR |
500+ | 0.30 EUR |
1000+ | 0.27 EUR |