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PI7C9X752FAEX PI7C9X752FAEX Diodes Incorporated PI7C9X752.pdf Description: IC BRIDGE DUAL UART 48TQFP
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PI7C9X794FCEX PI7C9X794FCEX Diodes Incorporated PI7C9X794.pdf Description: IC BRIDGE QUAD UART 64LQFP
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PT7C433833AZEEX PT7C433833AZEEX Diodes Incorporated PT7C433833A.pdf Description: IC RTC MOD LOW POWER 8TDFN
Produkt ist nicht verfügbar
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SDT30B100D1-13 SDT30B100D1-13 Diodes Incorporated SDT30B100D1.pdf Description: DIODE SCHOTTKY 100V 30A TO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
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DPD13AWF-7 DPD13AWF-7 Diodes Incorporated Description: TVS DIODES 13VWM 21.5VC SOD123F
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PI6CB18200ZDIEX PI6CB18200ZDIEX Diodes Incorporated PI6CB18200.pdf Description: CLOCK BUFFER,V-QFN4040-24
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ZXMN6A08GQTC ZXMN6A08GQTC Diodes Incorporated ZXMN6A08GQ.pdf Description: MOSFET N-CH 60V 3.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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PI3DPX1205AZLBEX PI3DPX1205AZLBEX Diodes Incorporated PI3DPX1205A.pdf Description: ACTIVE DISPLAY W-QFN3060-40 T&R
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Number of Channels: 6
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Voltage - Supply: 3.3V
Applications: DisplayPort
Data Rate (Max): 10Gbps
Supplier Device Package: 40-TQFN (4x6)
Signal Conditioning: Input Equalization
Produkt ist nicht verfügbar
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PI3HDX231ZLEX PI3HDX231ZLEX Diodes Incorporated PI3HDX231.pdf Description: IC INTERFACE SPECIALIZED 72TQFN
Packaging: Cut Tape (CT)
Package / Case: 72-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Applications: HDMI Redriver, Level Shifter
Supplier Device Package: 72-TQFN (11x5)
Part Status: Active
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ZXTP56020FDBQ-7 ZXTP56020FDBQ-7 Diodes Incorporated ZXTP56020FDBQ.pdf Description: TRANS 2PNP 20V 2A U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Supplier Device Package: U-DFN2020-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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ZXTP56020FDBQ-7 ZXTP56020FDBQ-7 Diodes Incorporated ZXTP56020FDBQ.pdf Description: TRANS 2PNP 20V 2A U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Supplier Device Package: U-DFN2020-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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PI3EQX1004B1ZHEX PI3EQX1004B1ZHEX Diodes Incorporated PI3EQX1004B1-Product-Brief.pdf Description: USB3 EQX V-QFN3590-42
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 125°C (TJ)
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Active
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PI3EQX1004B1ZHEX PI3EQX1004B1ZHEX Diodes Incorporated PI3EQX1004B1-Product-Brief.pdf Description: USB3 EQX V-QFN3590-42
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 125°C (TJ)
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Active
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DMN61D9UWQ-13 DMN61D9UWQ-13 Diodes Incorporated DMN61D9UWQ_Rev2-3_Aug2022.pdf Description: MOSFET N-CH 60V 400MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 440mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14076478 Stücke:
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50+0.35 EUR
73+0.24 EUR
110+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.1 EUR
5000+0.088 EUR
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DMP3028LPSQ-13 DMP3028LPSQ-13 Diodes Incorporated DMP3028LPSQ.pdf Description: MOSFET P-CH 30V 21A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.28W
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 366422 Stücke:
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DMT36M1LPS-13 DMT36M1LPS-13 Diodes Incorporated DMT36M1LPS.pdf Description: MOSFET N-CH 30V 65A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
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22+0.81 EUR
29+0.62 EUR
100+0.43 EUR
500+0.37 EUR
1000+0.33 EUR
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DMTH6002LPS-13 DMTH6002LPS-13 Diodes Incorporated DMTH6002LPS.pdf Description: MOSFET N-CH 60V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 167W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 30 V
auf Bestellung 8391 Stücke:
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5+3.77 EUR
10+2.42 EUR
100+1.65 EUR
500+1.33 EUR
1000+1.31 EUR
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PDS4200HQ-13 PDS4200HQ-13 Diodes Incorporated PDS4200HQ.pdf Description: DIODE SCHOTTKY 200V 4A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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18+1.02 EUR
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500+0.56 EUR
1000+0.52 EUR
2000+0.48 EUR
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PI3DPX1203ZHEX PI3DPX1203ZHEX Diodes Incorporated PI3DPX1203-Prod-Brief.pdf Description: IC REDRIVER 8GBPS 42TQFN
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Voltage - Supply: 3.3V
Applications: DisplayPort
Data Rate (Max): 8Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
auf Bestellung 13772 Stücke:
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6+3.2 EUR
10+2.87 EUR
25+2.72 EUR
100+2.35 EUR
250+2.23 EUR
500+2.13 EUR
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PI3USB32212ZLEX PI3USB32212ZLEX Diodes Incorporated PI3USB32212.pdf Description: USB3 SWITCH W-QFN3060-32 T&R 3.5
Packaging: Cut Tape (CT)
Features: USB 2.0, USB 3.0
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Applications: USB
On-State Resistance (Max): 13Ohm
-3db Bandwidth: 10.6GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 2.97V ~ 3.63V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Part Status: Active
Number of Channels: 2
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3+6.07 EUR
10+3.88 EUR
25+3.31 EUR
100+2.67 EUR
250+2.35 EUR
500+2.16 EUR
1000+1.99 EUR
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ZXTR2105FF-7 ZXTR2105FF-7 Diodes Incorporated ZXTR2105FF.pdf Description: IC REG LINEAR 5V 89MA SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 89mA
Operating Temperature: -65°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23F
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 46dB (100Hz)
Current - Supply (Max): 6.7 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1793120 Stücke:
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27+0.66 EUR
33+0.54 EUR
100+0.41 EUR
250+0.34 EUR
500+0.3 EUR
1000+0.27 EUR
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ADC144EUQ-13 ADC144EUQ-13 Diodes Incorporated ADC144EUQ.pdf Description: IC TRANSISTOR SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 270mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 90000 Stücke:
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10000+0.085 EUR
20000+0.077 EUR
30000+0.073 EUR
50000+0.069 EUR
70000+0.066 EUR
Mindestbestellmenge: 10000
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BSS138K-13 BSS138K-13 Diodes Incorporated BSS138K.pdf Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
auf Bestellung 6615000 Stücke:
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20000+0.046 EUR
50000+0.045 EUR
Mindestbestellmenge: 10000
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D15V0H1U2LP-7B D15V0H1U2LP-7B Diodes Incorporated D15V0H1U2LP.pdf Description: TVS DIODE 15VWM 27V X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 70pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 300W
Power Line Protection: No
auf Bestellung 750000 Stücke:
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10000+0.084 EUR
20000+0.081 EUR
30000+0.079 EUR
50000+0.071 EUR
Mindestbestellmenge: 10000
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D55V0M1B2WSQ-7 D55V0M1B2WSQ-7 Diodes Incorporated D55V0M1B2WSQ.pdf Description: TVS DIODE 55VWM 100VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 55V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 57V
Voltage - Clamping (Max) @ Ipp: 100V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 336000 Stücke:
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3000+0.12 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000
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DMN10H170SK3Q-13 DMN10H170SK3Q-13 Diodes Incorporated DMN10H170SK3Q2.pdf Description: MOSFET N-CH 100V 12A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1282500 Stücke:
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2500+0.37 EUR
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DMN2058UW-7 DMN2058UW-7 Diodes Incorporated DMN2058UW.pdf Description: MOSFET N-CH 20V 3.5A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 10 V
auf Bestellung 108000 Stücke:
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DMN601DWKQ-7 DMN601DWKQ-7 Diodes Incorporated DMN601DWKQ.pdf Description: MOSFET 2N-CH 60V 0.305A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1044000 Stücke:
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15000+0.094 EUR
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75000+0.077 EUR
150000+0.075 EUR
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DMN62D1LFB-7B DMN62D1LFB-7B Diodes Incorporated DMN62D1LFB.pdf Description: MOSFET N-CH 60V 320MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 25 V
auf Bestellung 1790000 Stücke:
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DMP2078LCA3-7 DMP2078LCA3-7 Diodes Incorporated DMP2078LCA3.pdf Description: MOSFET P-CH 20V 3.4A X4DSN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: X4-DSN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): -12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 10 V
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DXT2011P5Q-13 DXT2011P5Q-13 Diodes Incorporated DXT2011P5Q.pdf Description: TRANS NPN 100V 6A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
Qualification: AEC-Q101
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SBR0240LPW-7B SBR0240LPW-7B Diodes Incorporated SBR0240LPW.pdf Description: DIODE STD 40V 200MA X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3.8 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
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ZXTN4240F-7 ZXTN4240F-7 Diodes Incorporated ZXTN4240F.pdf Description: TRANS NPN 40V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 730 mW
auf Bestellung 258000 Stücke:
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150000+0.098 EUR
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ZXTP5240F-7 ZXTP5240F-7 Diodes Incorporated ZXTP5240F.pdf Description: TRANS PNP 40V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 730 mW
Qualification: AEC-Q101
auf Bestellung 1152000 Stücke:
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75000+0.11 EUR
150000+0.1 EUR
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ADC144EUQ-13 ADC144EUQ-13 Diodes Incorporated ADC144EUQ.pdf Description: IC TRANSISTOR SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 270mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 93409 Stücke:
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36+0.49 EUR
59+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
5000+0.094 EUR
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BSS138K-13 BSS138K-13 Diodes Incorporated BSS138K.pdf Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
auf Bestellung 6619645 Stücke:
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84+0.21 EUR
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229+0.077 EUR
500+0.074 EUR
1000+0.073 EUR
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D15V0H1U2LP-7B D15V0H1U2LP-7B Diodes Incorporated D15V0H1U2LP.pdf Description: TVS DIODE 15VWM 27V X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 70pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 300W
Power Line Protection: No
auf Bestellung 767530 Stücke:
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69+0.26 EUR
159+0.11 EUR
500+0.1 EUR
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5000+0.094 EUR
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D55V0M1B2WSQ-7 D55V0M1B2WSQ-7 Diodes Incorporated D55V0M1B2WSQ.pdf Description: TVS DIODE 55VWM 100VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 55V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 57V
Voltage - Clamping (Max) @ Ipp: 100V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 337743 Stücke:
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35+0.51 EUR
68+0.26 EUR
125+0.14 EUR
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DMN10H170SK3Q-13 DMN10H170SK3Q-13 Diodes Incorporated DMN10H170SK3Q2.pdf Description: MOSFET N-CH 100V 12A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1286036 Stücke:
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100+0.71 EUR
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DMN2058UW-7 DMN2058UW-7 Diodes Incorporated DMN2058UW.pdf Description: MOSFET N-CH 20V 3.5A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 10 V
auf Bestellung 110885 Stücke:
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34+0.53 EUR
56+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
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DMN601DWKQ-7 DMN601DWKQ-7 Diodes Incorporated DMN601DWKQ.pdf Description: MOSFET 2N-CH 60V 0.305A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1048469 Stücke:
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33+0.55 EUR
52+0.34 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
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DMN62D1LFB-7B DMN62D1LFB-7B Diodes Incorporated DMN62D1LFB.pdf Description: MOSFET N-CH 60V 320MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 25 V
auf Bestellung 1791122 Stücke:
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40+0.44 EUR
64+0.28 EUR
135+0.13 EUR
500+0.12 EUR
1000+0.11 EUR
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DMP2078LCA3-7 DMP2078LCA3-7 Diodes Incorporated DMP2078LCA3.pdf Description: MOSFET P-CH 20V 3.4A X4DSN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: X4-DSN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): -12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 10 V
auf Bestellung 26171 Stücke:
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24+0.74 EUR
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500+0.23 EUR
1000+0.18 EUR
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DXT2011P5Q-13 DXT2011P5Q-13 Diodes Incorporated DXT2011P5Q.pdf Description: TRANS NPN 100V 6A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 28036 Stücke:
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10+1.85 EUR
16+1.16 EUR
100+0.76 EUR
500+0.59 EUR
1000+0.53 EUR
2000+0.49 EUR
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SBR0240LPW-7B SBR0240LPW-7B Diodes Incorporated SBR0240LPW.pdf Description: DIODE STD 40V 200MA X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3.8 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 14938 Stücke:
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112+0.16 EUR
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218+0.081 EUR
500+0.078 EUR
1000+0.07 EUR
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ZXTN4240F-7 ZXTN4240F-7 Diodes Incorporated ZXTN4240F.pdf Description: TRANS NPN 40V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 730 mW
auf Bestellung 265217 Stücke:
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28+0.63 EUR
40+0.45 EUR
100+0.23 EUR
500+0.2 EUR
1000+0.16 EUR
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ZXTP5240F-7 ZXTP5240F-7 Diodes Incorporated ZXTP5240F.pdf Description: TRANS PNP 40V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 730 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1155948 Stücke:
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27+0.67 EUR
38+0.47 EUR
100+0.24 EUR
500+0.21 EUR
1000+0.16 EUR
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BCR402UW6Q-7 BCR402UW6Q-7 Diodes Incorporated BCR402UW6Q.pdf Description: IC LED DRVR LIN PWM 20MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 25kHz
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 20mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 310899 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
33+0.55 EUR
35+0.51 EUR
100+0.41 EUR
250+0.38 EUR
500+0.32 EUR
1000+0.25 EUR
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BCR405UW6Q-7 BCR405UW6Q-7 Diodes Incorporated BCR405UW6Q.pdf Description: IC LED DRVR LIN PWM 50MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 25kHz
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 50mA
Internal Switch(s): No
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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PI3DBS16412ZLCEX PI3DBS16412ZLCEX Diodes Incorporated PI3DBS16412-Product-Brief.pdf Description: PCIE SWITCH W-QFN3060-40 T&R 3.5
Packaging: Tape & Reel (TR)
Features: Bi-Directional, USB 3.0, USB 3.1
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCIe 4.0, USB
-3db Bandwidth: 13GHz
Supplier Device Package: 40-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
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PI3DBS16412ZLCEX PI3DBS16412ZLCEX Diodes Incorporated PI3DBS16412-Product-Brief.pdf Description: PCIE SWITCH W-QFN3060-40 T&R 3.5
Packaging: Cut Tape (CT)
Features: Bi-Directional, USB 3.0, USB 3.1
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCIe 4.0, USB
-3db Bandwidth: 13GHz
Supplier Device Package: 40-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
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S3MBQ-13-F S3MBQ-13-F Diodes Incorporated Description: DIODE STANDARD 1000V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT6012LPS-13 Diodes Incorporated Description: MOSFET N-CH 60V POWERDI
Produkt ist nicht verfügbar
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MBRF10200CT-LJ MBRF10200CT-LJ Diodes Incorporated MBR%28F%2910200CT.pdf Description: DIODE ARR SCHOT 200V 5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PI3PCIE3413AZHEX PI3PCIE3413AZHEX Diodes Incorporated PI3PCIE3413A.pdf Description: IC MUX/DEMUX PCIE 42TQFN
Features: Bi-Directional
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCI Express®
-3db Bandwidth: 6.8GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 3:1
Part Status: Active
Number of Channels: 4
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PI3PCIE3413AZHEX PI3PCIE3413AZHEX Diodes Incorporated PI3PCIE3413A.pdf Description: IC MUX/DEMUX PCIE 42TQFN
Features: Bi-Directional
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCI Express®
-3db Bandwidth: 6.8GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 3:1
Part Status: Active
Number of Channels: 4
auf Bestellung 13998 Stücke:
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APR346K6TR-G1 APR346K6TR-G1 Diodes Incorporated APR346.pdf Description: ACDC SYNCH RECT CONT SOT26
Produkt ist nicht verfügbar
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APR346K6TR-G1 APR346K6TR-G1 Diodes Incorporated APR346.pdf Description: ACDC SYNCH RECT CONT SOT26
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1SMB5913B-13 1SMB5913B-13 Diodes Incorporated 1SMB59xxB_DS.pdf Description: DIODE ZENER 3.3V 550MW SMB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SMB
Part Status: Obsolete
Power - Max: 550 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Produkt ist nicht verfügbar
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1SMB5915B-13 1SMB5915B-13 Diodes Incorporated 1SMB59xxB_DS.pdf Description: DIODE ZENER SMB
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PI7C9X752FAEX PI7C9X752.pdf
PI7C9X752FAEX
Hersteller: Diodes Incorporated
Description: IC BRIDGE DUAL UART 48TQFP
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PI7C9X794FCEX PI7C9X794.pdf
PI7C9X794FCEX
Hersteller: Diodes Incorporated
Description: IC BRIDGE QUAD UART 64LQFP
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PT7C433833AZEEX PT7C433833A.pdf
PT7C433833AZEEX
Hersteller: Diodes Incorporated
Description: IC RTC MOD LOW POWER 8TDFN
Produkt ist nicht verfügbar
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SDT30B100D1-13 SDT30B100D1.pdf
SDT30B100D1-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 30A TO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
auf Bestellung 41557 Stücke:
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15+1.21 EUR
22+0.8 EUR
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DPD13AWF-7
DPD13AWF-7
Hersteller: Diodes Incorporated
Description: TVS DIODES 13VWM 21.5VC SOD123F
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PI6CB18200ZDIEX PI6CB18200.pdf
PI6CB18200ZDIEX
Hersteller: Diodes Incorporated
Description: CLOCK BUFFER,V-QFN4040-24
Produkt ist nicht verfügbar
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ZXMN6A08GQTC ZXMN6A08GQ.pdf
ZXMN6A08GQTC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 3.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
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Anzahl Preis
4000+0.52 EUR
8000+0.5 EUR
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PI3DPX1205AZLBEX PI3DPX1205A.pdf
PI3DPX1205AZLBEX
Hersteller: Diodes Incorporated
Description: ACTIVE DISPLAY W-QFN3060-40 T&R
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Number of Channels: 6
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Voltage - Supply: 3.3V
Applications: DisplayPort
Data Rate (Max): 10Gbps
Supplier Device Package: 40-TQFN (4x6)
Signal Conditioning: Input Equalization
Produkt ist nicht verfügbar
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PI3HDX231ZLEX PI3HDX231.pdf
PI3HDX231ZLEX
Hersteller: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 72TQFN
Packaging: Cut Tape (CT)
Package / Case: 72-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Applications: HDMI Redriver, Level Shifter
Supplier Device Package: 72-TQFN (11x5)
Part Status: Active
auf Bestellung 93980 Stücke:
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Anzahl Preis
4+5.74 EUR
10+5.15 EUR
25+4.87 EUR
100+4.22 EUR
250+4 EUR
500+3.59 EUR
1000+3.03 EUR
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ZXTP56020FDBQ-7 ZXTP56020FDBQ.pdf
ZXTP56020FDBQ-7
Hersteller: Diodes Incorporated
Description: TRANS 2PNP 20V 2A U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Supplier Device Package: U-DFN2020-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 201000 Stücke:
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Anzahl Preis
3000+0.33 EUR
6000+0.31 EUR
9000+0.29 EUR
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ZXTP56020FDBQ-7 ZXTP56020FDBQ.pdf
ZXTP56020FDBQ-7
Hersteller: Diodes Incorporated
Description: TRANS 2PNP 20V 2A U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Supplier Device Package: U-DFN2020-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 203906 Stücke:
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Anzahl Preis
18+0.99 EUR
21+0.84 EUR
100+0.58 EUR
500+0.46 EUR
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PI3EQX1004B1ZHEX PI3EQX1004B1-Product-Brief.pdf
PI3EQX1004B1ZHEX
Hersteller: Diodes Incorporated
Description: USB3 EQX V-QFN3590-42
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 125°C (TJ)
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Active
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3500+2.31 EUR
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PI3EQX1004B1ZHEX PI3EQX1004B1-Product-Brief.pdf
PI3EQX1004B1ZHEX
Hersteller: Diodes Incorporated
Description: USB3 EQX V-QFN3590-42
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 125°C (TJ)
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Active
auf Bestellung 6028 Stücke:
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4+4.42 EUR
10+3.3 EUR
25+3.02 EUR
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500+2.48 EUR
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DMN61D9UWQ-13 DMN61D9UWQ_Rev2-3_Aug2022.pdf
DMN61D9UWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 400MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 440mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14076478 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
73+0.24 EUR
110+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.1 EUR
5000+0.088 EUR
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DMP3028LPSQ-13 DMP3028LPSQ.pdf
DMP3028LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 21A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.28W
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 366422 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
15+1.22 EUR
100+0.84 EUR
500+0.67 EUR
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DMT36M1LPS-13 DMT36M1LPS.pdf
DMT36M1LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 65A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
auf Bestellung 752132 Stücke:
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Anzahl Preis
22+0.81 EUR
29+0.62 EUR
100+0.43 EUR
500+0.37 EUR
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DMTH6002LPS-13 DMTH6002LPS.pdf
DMTH6002LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 167W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 30 V
auf Bestellung 8391 Stücke:
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Anzahl Preis
5+3.77 EUR
10+2.42 EUR
100+1.65 EUR
500+1.33 EUR
1000+1.31 EUR
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PDS4200HQ-13 PDS4200HQ.pdf
PDS4200HQ-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 4A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 170914 Stücke:
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Anzahl Preis
12+1.51 EUR
18+1.02 EUR
100+0.71 EUR
500+0.56 EUR
1000+0.52 EUR
2000+0.48 EUR
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PI3DPX1203ZHEX PI3DPX1203-Prod-Brief.pdf
PI3DPX1203ZHEX
Hersteller: Diodes Incorporated
Description: IC REDRIVER 8GBPS 42TQFN
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Voltage - Supply: 3.3V
Applications: DisplayPort
Data Rate (Max): 8Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
auf Bestellung 13772 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.2 EUR
10+2.87 EUR
25+2.72 EUR
100+2.35 EUR
250+2.23 EUR
500+2.13 EUR
Mindestbestellmenge: 6
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PI3USB32212ZLEX PI3USB32212.pdf
PI3USB32212ZLEX
Hersteller: Diodes Incorporated
Description: USB3 SWITCH W-QFN3060-32 T&R 3.5
Packaging: Cut Tape (CT)
Features: USB 2.0, USB 3.0
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Applications: USB
On-State Resistance (Max): 13Ohm
-3db Bandwidth: 10.6GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 2.97V ~ 3.63V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Part Status: Active
Number of Channels: 2
auf Bestellung 30829 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.07 EUR
10+3.88 EUR
25+3.31 EUR
100+2.67 EUR
250+2.35 EUR
500+2.16 EUR
1000+1.99 EUR
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ZXTR2105FF-7 ZXTR2105FF.pdf
ZXTR2105FF-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 5V 89MA SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 89mA
Operating Temperature: -65°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23F
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 46dB (100Hz)
Current - Supply (Max): 6.7 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1793120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
27+0.66 EUR
33+0.54 EUR
100+0.41 EUR
250+0.34 EUR
500+0.3 EUR
1000+0.27 EUR
Mindestbestellmenge: 17
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ADC144EUQ-13 ADC144EUQ.pdf
ADC144EUQ-13
Hersteller: Diodes Incorporated
Description: IC TRANSISTOR SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 270mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.085 EUR
20000+0.077 EUR
30000+0.073 EUR
50000+0.069 EUR
70000+0.066 EUR
Mindestbestellmenge: 10000
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BSS138K-13 BSS138K.pdf
BSS138K-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
auf Bestellung 6615000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.051 EUR
20000+0.046 EUR
50000+0.045 EUR
Mindestbestellmenge: 10000
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D15V0H1U2LP-7B D15V0H1U2LP.pdf
D15V0H1U2LP-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 15VWM 27V X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 70pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 300W
Power Line Protection: No
auf Bestellung 750000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.084 EUR
20000+0.081 EUR
30000+0.079 EUR
50000+0.071 EUR
Mindestbestellmenge: 10000
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D55V0M1B2WSQ-7 D55V0M1B2WSQ.pdf
D55V0M1B2WSQ-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 55VWM 100VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 55V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 57V
Voltage - Clamping (Max) @ Ipp: 100V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 336000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000
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DMN10H170SK3Q-13 DMN10H170SK3Q2.pdf
DMN10H170SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 12A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1282500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.37 EUR
Mindestbestellmenge: 2500
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DMN2058UW-7 DMN2058UW.pdf
DMN2058UW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.5A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 10 V
auf Bestellung 108000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.092 EUR
6000+0.088 EUR
9000+0.079 EUR
15000+0.078 EUR
30000+0.074 EUR
75000+0.071 EUR
Mindestbestellmenge: 3000
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DMN601DWKQ-7 DMN601DWKQ.pdf
DMN601DWKQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.305A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1044000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
9000+0.1 EUR
15000+0.094 EUR
21000+0.09 EUR
30000+0.086 EUR
75000+0.077 EUR
150000+0.075 EUR
Mindestbestellmenge: 3000
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DMN62D1LFB-7B DMN62D1LFB.pdf
DMN62D1LFB-7B
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 320MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 25 V
auf Bestellung 1790000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.082 EUR
20000+0.077 EUR
50000+0.074 EUR
70000+0.071 EUR
Mindestbestellmenge: 10000
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DMP2078LCA3-7 DMP2078LCA3.pdf
DMP2078LCA3-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.4A X4DSN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: X4-DSN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): -12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.14 EUR
Mindestbestellmenge: 10000
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DXT2011P5Q-13 DXT2011P5Q.pdf
DXT2011P5Q-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 6A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.43 EUR
10000+0.4 EUR
15000+0.39 EUR
Mindestbestellmenge: 5000
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SBR0240LPW-7B SBR0240LPW.pdf
SBR0240LPW-7B
Hersteller: Diodes Incorporated
Description: DIODE STD 40V 200MA X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3.8 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.045 EUR
Mindestbestellmenge: 10000
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ZXTN4240F-7 ZXTN4240F.pdf
ZXTN4240F-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 730 mW
auf Bestellung 258000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
9000+0.12 EUR
75000+0.1 EUR
150000+0.098 EUR
Mindestbestellmenge: 3000
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ZXTP5240F-7 ZXTP5240F.pdf
ZXTP5240F-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 730 mW
Qualification: AEC-Q101
auf Bestellung 1152000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
75000+0.11 EUR
150000+0.1 EUR
Mindestbestellmenge: 3000
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ADC144EUQ-13 ADC144EUQ.pdf
ADC144EUQ-13
Hersteller: Diodes Incorporated
Description: IC TRANSISTOR SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 270mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 93409 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
59+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
5000+0.094 EUR
Mindestbestellmenge: 36
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BSS138K-13 BSS138K.pdf
BSS138K-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
auf Bestellung 6619645 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
143+0.12 EUR
229+0.077 EUR
500+0.074 EUR
1000+0.073 EUR
Mindestbestellmenge: 84
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D15V0H1U2LP-7B D15V0H1U2LP.pdf
D15V0H1U2LP-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 15VWM 27V X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 70pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 300W
Power Line Protection: No
auf Bestellung 767530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
69+0.26 EUR
159+0.11 EUR
500+0.1 EUR
1000+0.098 EUR
2000+0.096 EUR
5000+0.094 EUR
Mindestbestellmenge: 48
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D55V0M1B2WSQ-7 D55V0M1B2WSQ.pdf
D55V0M1B2WSQ-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 55VWM 100VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 55V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 57V
Voltage - Clamping (Max) @ Ipp: 100V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 337743 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
68+0.26 EUR
125+0.14 EUR
Mindestbestellmenge: 35
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DMN10H170SK3Q-13 DMN10H170SK3Q2.pdf
DMN10H170SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 12A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1286036 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.74 EUR
17+1.09 EUR
100+0.71 EUR
500+0.55 EUR
1000+0.5 EUR
Mindestbestellmenge: 11
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DMN2058UW-7 DMN2058UW.pdf
DMN2058UW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.5A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 10 V
auf Bestellung 110885 Stücke:
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34+0.53 EUR
56+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
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DMN601DWKQ-7 DMN601DWKQ.pdf
DMN601DWKQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.305A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1048469 Stücke:
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33+0.55 EUR
52+0.34 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
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DMN62D1LFB-7B DMN62D1LFB.pdf
DMN62D1LFB-7B
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 320MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 25 V
auf Bestellung 1791122 Stücke:
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Anzahl Preis
40+0.44 EUR
64+0.28 EUR
135+0.13 EUR
500+0.12 EUR
1000+0.11 EUR
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DMP2078LCA3-7 DMP2078LCA3.pdf
DMP2078LCA3-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.4A X4DSN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: X4-DSN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): -12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 10 V
auf Bestellung 26171 Stücke:
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24+0.74 EUR
35+0.52 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
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DXT2011P5Q-13 DXT2011P5Q.pdf
DXT2011P5Q-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 6A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 28036 Stücke:
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10+1.85 EUR
16+1.16 EUR
100+0.76 EUR
500+0.59 EUR
1000+0.53 EUR
2000+0.49 EUR
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SBR0240LPW-7B SBR0240LPW.pdf
SBR0240LPW-7B
Hersteller: Diodes Incorporated
Description: DIODE STD 40V 200MA X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3.8 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 14938 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
193+0.092 EUR
218+0.081 EUR
500+0.078 EUR
1000+0.07 EUR
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ZXTN4240F-7 ZXTN4240F.pdf
ZXTN4240F-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 730 mW
auf Bestellung 265217 Stücke:
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Anzahl Preis
28+0.63 EUR
40+0.45 EUR
100+0.23 EUR
500+0.2 EUR
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ZXTP5240F-7 ZXTP5240F.pdf
ZXTP5240F-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 730 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1155948 Stücke:
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Anzahl Preis
27+0.67 EUR
38+0.47 EUR
100+0.24 EUR
500+0.21 EUR
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BCR402UW6Q-7 BCR402UW6Q.pdf
BCR402UW6Q-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR LIN PWM 20MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 25kHz
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 20mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 310899 Stücke:
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28+0.65 EUR
33+0.55 EUR
35+0.51 EUR
100+0.41 EUR
250+0.38 EUR
500+0.32 EUR
1000+0.25 EUR
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BCR405UW6Q-7 BCR405UW6Q.pdf
BCR405UW6Q-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR LIN PWM 50MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 25kHz
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 50mA
Internal Switch(s): No
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4220 Stücke:
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28+0.65 EUR
32+0.55 EUR
35+0.52 EUR
100+0.41 EUR
250+0.38 EUR
500+0.33 EUR
1000+0.25 EUR
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PI3DBS16412ZLCEX PI3DBS16412-Product-Brief.pdf
PI3DBS16412ZLCEX
Hersteller: Diodes Incorporated
Description: PCIE SWITCH W-QFN3060-40 T&R 3.5
Packaging: Tape & Reel (TR)
Features: Bi-Directional, USB 3.0, USB 3.1
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCIe 4.0, USB
-3db Bandwidth: 13GHz
Supplier Device Package: 40-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
auf Bestellung 7000 Stücke:
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3500+2.16 EUR
7000+2.12 EUR
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PI3DBS16412ZLCEX PI3DBS16412-Product-Brief.pdf
PI3DBS16412ZLCEX
Hersteller: Diodes Incorporated
Description: PCIE SWITCH W-QFN3060-40 T&R 3.5
Packaging: Cut Tape (CT)
Features: Bi-Directional, USB 3.0, USB 3.1
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCIe 4.0, USB
-3db Bandwidth: 13GHz
Supplier Device Package: 40-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
auf Bestellung 8147 Stücke:
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5+4.15 EUR
10+3.1 EUR
25+2.84 EUR
100+2.55 EUR
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S3MBQ-13-F
S3MBQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 1000V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT6012LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V POWERDI
Produkt ist nicht verfügbar
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MBRF10200CT-LJ MBR%28F%2910200CT.pdf
MBRF10200CT-LJ
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 200V 5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PI3PCIE3413AZHEX PI3PCIE3413A.pdf
PI3PCIE3413AZHEX
Hersteller: Diodes Incorporated
Description: IC MUX/DEMUX PCIE 42TQFN
Features: Bi-Directional
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCI Express®
-3db Bandwidth: 6.8GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 3:1
Part Status: Active
Number of Channels: 4
auf Bestellung 10500 Stücke:
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3500+4.22 EUR
Mindestbestellmenge: 3500
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PI3PCIE3413AZHEX PI3PCIE3413A.pdf
PI3PCIE3413AZHEX
Hersteller: Diodes Incorporated
Description: IC MUX/DEMUX PCIE 42TQFN
Features: Bi-Directional
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCI Express®
-3db Bandwidth: 6.8GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 3:1
Part Status: Active
Number of Channels: 4
auf Bestellung 13998 Stücke:
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2+10.81 EUR
10+7.14 EUR
25+6.19 EUR
100+5.11 EUR
250+4.57 EUR
500+4.25 EUR
1000+4.22 EUR
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APR346K6TR-G1 APR346.pdf
APR346K6TR-G1
Hersteller: Diodes Incorporated
Description: ACDC SYNCH RECT CONT SOT26
Produkt ist nicht verfügbar
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APR346K6TR-G1 APR346.pdf
APR346K6TR-G1
Hersteller: Diodes Incorporated
Description: ACDC SYNCH RECT CONT SOT26
auf Bestellung 2990 Stücke:
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1SMB5913B-13 1SMB59xxB_DS.pdf
1SMB5913B-13
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.3V 550MW SMB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SMB
Part Status: Obsolete
Power - Max: 550 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Produkt ist nicht verfügbar
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1SMB5915B-13 1SMB59xxB_DS.pdf
1SMB5915B-13
Hersteller: Diodes Incorporated
Description: DIODE ZENER SMB
Produkt ist nicht verfügbar
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