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SMBJ17AQ-13-F SMBJ17AQ-13-F Diodes Incorporated SMBJ6.5CAQ-SMBJ100CAQ.pdf Description: TVS DIODE 17VWM 27.6VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ17AQ-13-F SMBJ17AQ-13-F Diodes Incorporated SMBJ6.5CAQ-SMBJ100CAQ.pdf Description: TVS DIODE 17VWM 27.6VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBR15100CT-E1 MBR15100CT-E1 Diodes Incorporated MBR15100C.pdf Description: DIODE ARR SCHOT 100V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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MBR15100CT-G1 MBR15100CT-G1 Diodes Incorporated MBR15100C.pdf Description: DIODE ARR SCHOT 100V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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MBR15100CTF-E1 MBR15100CTF-E1 Diodes Incorporated MBR15100C.pdf Description: DIODE ARR SCHOTT 100V TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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MBR15100CTF-G1 MBR15100CTF-G1 Diodes Incorporated MBR15100C.pdf Description: DIODE ARR SCHOTT 100V TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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74AHCT14T14-13 74AHCT14T14-13 Diodes Incorporated 74AHCT14.pdf Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 20 µA
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5000+0.19 EUR
7500+0.18 EUR
12500+0.17 EUR
17500+0.16 EUR
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DMTH4007LPSQ-13 DMTH4007LPSQ-13 Diodes Incorporated DMTH4007LPSQ.pdf Description: MOSFET N-CH 40V 15.5A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 30 V
Qualification: AEC-Q101
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DMTH4007LPSQ-13 DMTH4007LPSQ-13 Diodes Incorporated DMTH4007LPSQ.pdf Description: MOSFET N-CH 40V 15.5A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 30 V
Qualification: AEC-Q101
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BAV99DWQ-7-F BAV99DWQ-7-F Diodes Incorporated BAV99DWQ.pdf Description: DIODE ARRAY GP 75V 215MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
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BAV99DWQ-7-F BAV99DWQ-7-F Diodes Incorporated BAV99DWQ.pdf Description: DIODE ARRAY GP 75V 215MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
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100+0.2 EUR
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AP22913W6-7 AP22913W6-7 Diodes Incorporated AP22913.pdf Description: IC PWR SWITCH P-CHAN 1:1 SOT26
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: SOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 84mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-26
Fault Protection: Reverse Current, UVLO
Part Status: Active
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AP22913W6-7 AP22913W6-7 Diodes Incorporated AP22913.pdf Description: IC PWR SWITCH P-CHAN 1:1 SOT26
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: SOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 84mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-26
Fault Protection: Reverse Current, UVLO
Part Status: Active
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AP22913W6-EVM Diodes Incorporated AP22913W6-EVM-User-Guide.pdf Description: EVAL BOARD FOR AP22913
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: AP22913
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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AP22913CN4-EVM AP22913CN4-EVM Diodes Incorporated AP22913CN4-EVM-User-Guide.pdf Description: EVAL BOARD FOR AP22913
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: AP22913
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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DF01S-T DF01S-T Diodes Incorporated ds17001.pdf Description: BRIDGE RECT 1PHASE 100V 1A DF-S
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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DF01S-T DF01S-T Diodes Incorporated ds17001.pdf Description: BRIDGE RECT 1PHASE 100V 1A DF-S
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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BZX84C36W-7 BZX84C36W-7 Diodes Incorporated ds30066.pdf Description: DIODE ZENER 36V 200MW SOT323
Packaging: Cut Tape (CT)
Part Status: Active
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KBP2005G KBP2005G Diodes Incorporated ds21205.pdf Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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PI3EQX16621ZLDEX PI3EQX16621ZLDEX Diodes Incorporated PI3EQX16621-Product-Brief.pdf Description: PCIE EQX REDRIVER W-QFN3060-40
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 16Gbps
Supplier Device Package: 40-TQFN (3x6)
Signal Conditioning: Input Equalization
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PI3EQX16621ZLDEX PI3EQX16621ZLDEX Diodes Incorporated PI3EQX16621-Product-Brief.pdf Description: PCIE EQX REDRIVER W-QFN3060-40
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 16Gbps
Supplier Device Package: 40-TQFN (3x6)
Signal Conditioning: Input Equalization
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1000+5 EUR
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PS508LEX PS508LEX Diodes Incorporated PS508-509.pdf Description: ANALOG SWITCH 17V,TSSOP-16,T&R,2
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PS508LEX PS508LEX Diodes Incorporated PS508-509.pdf Description: ANALOG SWITCH 17V,TSSOP-16,T&R,2
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AP78L05WG-7 AP78L05WG-7 Diodes Incorporated Description: IC REG LINEAR 5V 100MA SOT23
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PI7C9X1170ACLE PI7C9X1170ACLE Diodes Incorporated PI7C9X1170.pdf Description: IC I2C/SPI TO UART 24TSSOP 62PC
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PI7C9X1170ACLEX PI7C9X1170ACLEX Diodes Incorporated PI7C9X1170.pdf Description: IC I2C/SPI TO UART 24TSSOP 3K
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PI7C9X1170BCLEX PI7C9X1170BCLEX Diodes Incorporated PI7C9X1170.pdf Description: IC SPI TO UART BRDG 16TSSOP 2.5K
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PI7C9X1170CZDEX PI7C9X1170CZDEX Diodes Incorporated PI7C9X1170.pdf Description: IC SPI TO UART BRDGE 24TQFN 3.5K
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PI7C9X1170BCLE PI7C9X1170BCLE Diodes Incorporated PI7C9X1170.pdf Description: IC SPI TO UART BRDG 16TSSOP 96PC
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PI7C9X1170ABLE PI7C9X1170ABLE Diodes Incorporated Description: IC BRIDGE I2C/SPI TO UART
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PI7C9X1170ABLEX PI7C9X1170ABLEX Diodes Incorporated Description: IC BRIDGE I2C/SPI TO UART
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PI7C9X1170BBLE PI7C9X1170BBLE Diodes Incorporated Description: IC BRIDGE I2C/SPI TO UART
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PI7C9X1170BBLEX PI7C9X1170BBLEX Diodes Incorporated Description: IC BRIDGE I2C/SPI TO UART
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PI7C9X1170CZDE PI7C9X1170CZDE Diodes Incorporated PI7C9X1170.pdf Description: IC SPI TO UART BRDG 24TQFN 490PC
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AL1678-08BS7-13 AL1678-08BS7-13 Diodes Incorporated AL1678-20B_10B_08B.pdf Description: IC LED DRIVER OFFL NO 800MA 7SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Voltage - Output: 15V ~ 35V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 350kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 800mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 7-SO
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Produkt ist nicht verfügbar
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SBRT25U50SLP-13 SBRT25U50SLP-13 Diodes Incorporated SBRT25U50SLP.pdf Description: DIODE SBR 50V 25A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 25A
Supplier Device Package: PowerDI5060-8
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 25 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Produkt ist nicht verfügbar
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SBRT20M80SP5-13 SBRT20M80SP5-13 Diodes Incorporated Description: DIODE SBR 80V 20A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 80 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SBRT20M60SP5-13 SBRT20M60SP5-13 Diodes Incorporated SBRT20M60SP5.pdf Description: DIODE SBR 60V 20A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 65000 Stücke:
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5000+0.53 EUR
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SBRT20M60SP5-13 SBRT20M60SP5-13 Diodes Incorporated SBRT20M60SP5.pdf Description: DIODE SBR 60V 20A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Qualification: AEC-Q101
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SBRT25M60SLP-13 SBRT25M60SLP-13 Diodes Incorporated SBRT25M60SLP.pdf Description: DIODE SBR 60V 25A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 25A
Supplier Device Package: PowerDI5060-8 (Type K)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 25 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
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AP7363-HA-7 AP7363-HA-7 Diodes Incorporated AP7363.pdf Description: IC REG LINEAR POS ADJ 1.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: U-DFN2030-8
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Over Current, Over Temperature
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AP7363-HA-7 AP7363-HA-7 Diodes Incorporated AP7363.pdf Description: IC REG LINEAR POS ADJ 1.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: U-DFN2030-8
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Over Current, Over Temperature
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FL3200022 FL3200022 Diodes Incorporated FL.pdf Description: CRYSTAL 32.0000MHZ 16PF SMD
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FL3200022 FL3200022 Diodes Incorporated FL.pdf Description: CRYSTAL 32.0000MHZ 16PF SMD
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FL3200037 FL3200037 Diodes Incorporated FL.pdf Description: CRYSTAL 32.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.030" (0.75mm)
ESR (Equivalent Series Resistance): 50 Ohms
Frequency: 32 MHz
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FL3200037 FL3200037 Diodes Incorporated FL.pdf Description: CRYSTAL 32.0000MHZ 8PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.030" (0.75mm)
ESR (Equivalent Series Resistance): 50 Ohms
Frequency: 32 MHz
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DMPH4015SK3Q-13 DMPH4015SK3Q-13 Diodes Incorporated DMPH4015SK3Q.pdf Description: MOSFET P-CH 40V 14A/45A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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DMPH4015SK3Q-13 DMPH4015SK3Q-13 Diodes Incorporated DMPH4015SK3Q.pdf Description: MOSFET P-CH 40V 14A/45A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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DMTH6005LK3Q-13 DMTH6005LK3Q-13 Diodes Incorporated DMTH6005LK3Q.pdf Description: MOSFET N-CH 60V 90A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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DMTH6005LK3Q-13 DMTH6005LK3Q-13 Diodes Incorporated DMTH6005LK3Q.pdf Description: MOSFET N-CH 60V 90A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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DMTH6004SK3Q-13 DMTH6004SK3Q-13 Diodes Incorporated DMTH6004SK3Q.pdf Description: MOSFET N-CH 60V 100A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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DMTH6004SK3Q-13 DMTH6004SK3Q-13 Diodes Incorporated DMTH6004SK3Q.pdf Description: MOSFET N-CH 60V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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DMNH6021SK3Q-13 DMNH6021SK3Q-13 Diodes Incorporated DMNH6021SK3Q.pdf Description: MOSFET N-CH 60V 50A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Qualification: AEC-Q101
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DMNH6021SK3Q-13 DMNH6021SK3Q-13 Diodes Incorporated DMNH6021SK3Q.pdf Description: MOSFET N-CH 60V 50A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Qualification: AEC-Q101
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DMNH6042SK3Q-13 DMNH6042SK3Q-13 Diodes Incorporated DMNH6042SK3Q.pdf Description: MOSFET N-CH 60V 25A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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DMNH6042SK3Q-13 DMNH6042SK3Q-13 Diodes Incorporated DMNH6042SK3Q.pdf Description: MOSFET N-CH 60V 25A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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DMTH6010SK3Q-13 DMTH6010SK3Q-13 Diodes Incorporated DMTH6010SK3Q.pdf Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V
Qualification: AEC-Q101
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DMTH6010SK3Q-13 DMTH6010SK3Q-13 Diodes Incorporated DMTH6010SK3Q.pdf Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V
Qualification: AEC-Q101
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G53270004 G53270004 Diodes Incorporated G53270004_G.pdf Description: CRYSTAL 32.7680KHZ 12.5PF SMD
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G53270004 G53270004 Diodes Incorporated G53270004_G.pdf Description: CRYSTAL 32.7680KHZ 12.5PF SMD
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SMBJ17AQ-13-F SMBJ6.5CAQ-SMBJ100CAQ.pdf
SMBJ17AQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 17VWM 27.6VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SMBJ17AQ-13-F SMBJ6.5CAQ-SMBJ100CAQ.pdf
SMBJ17AQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 17VWM 27.6VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBR15100CT-E1 MBR15100C.pdf
MBR15100CT-E1
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 100V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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MBR15100CT-G1 MBR15100C.pdf
MBR15100CT-G1
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 100V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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MBR15100CTF-E1 MBR15100C.pdf
MBR15100CTF-E1
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 100V TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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MBR15100CTF-G1 MBR15100C.pdf
MBR15100CTF-G1
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 100V TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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74AHCT14T14-13 74AHCT14.pdf
74AHCT14T14-13
Hersteller: Diodes Incorporated
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 20 µA
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.21 EUR
5000+0.19 EUR
7500+0.18 EUR
12500+0.17 EUR
17500+0.16 EUR
Mindestbestellmenge: 2500
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DMTH4007LPSQ-13 DMTH4007LPSQ.pdf
DMTH4007LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 15.5A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH4007LPSQ-13 DMTH4007LPSQ.pdf
DMTH4007LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 15.5A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
12+1.49 EUR
100+1.05 EUR
500+0.88 EUR
Mindestbestellmenge: 10
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BAV99DWQ-7-F BAV99DWQ.pdf
BAV99DWQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 75V 215MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAV99DWQ-7-F BAV99DWQ.pdf
BAV99DWQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 75V 215MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3343 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
75+0.24 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 50
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AP22913W6-7 AP22913.pdf
AP22913W6-7
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH P-CHAN 1:1 SOT26
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: SOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 84mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-26
Fault Protection: Reverse Current, UVLO
Part Status: Active
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
6000+0.17 EUR
21000+0.16 EUR
Mindestbestellmenge: 3000
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AP22913W6-7 AP22913.pdf
AP22913W6-7
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH P-CHAN 1:1 SOT26
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: SOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 84mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-26
Fault Protection: Reverse Current, UVLO
Part Status: Active
auf Bestellung 86227 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
60+0.29 EUR
68+0.26 EUR
100+0.22 EUR
250+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 42
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AP22913W6-EVM AP22913W6-EVM-User-Guide.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP22913
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: AP22913
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
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AP22913CN4-EVM AP22913CN4-EVM-User-Guide.pdf
AP22913CN4-EVM
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP22913
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: AP22913
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+44.93 EUR
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DF01S-T ds17001.pdf
DF01S-T
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 100V 1A DF-S
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 25500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.19 EUR
10500+0.18 EUR
15000+0.17 EUR
Mindestbestellmenge: 1500
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DF01S-T ds17001.pdf
DF01S-T
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 100V 1A DF-S
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 25682 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
30+0.59 EUR
100+0.38 EUR
500+0.28 EUR
Mindestbestellmenge: 19
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BZX84C36W-7 ds30066.pdf
BZX84C36W-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 36V 200MW SOT323
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 2398 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
75+0.24 EUR
104+0.17 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 48
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KBP2005G ds21205.pdf
KBP2005G
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 1095 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
37+0.49 EUR
105+0.46 EUR
525+0.35 EUR
1015+0.31 EUR
Mindestbestellmenge: 16
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PI3EQX16621ZLDEX PI3EQX16621-Product-Brief.pdf
PI3EQX16621ZLDEX
Hersteller: Diodes Incorporated
Description: PCIE EQX REDRIVER W-QFN3060-40
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 16Gbps
Supplier Device Package: 40-TQFN (3x6)
Signal Conditioning: Input Equalization
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+4.75 EUR
Mindestbestellmenge: 3500
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PI3EQX16621ZLDEX PI3EQX16621-Product-Brief.pdf
PI3EQX16621ZLDEX
Hersteller: Diodes Incorporated
Description: PCIE EQX REDRIVER W-QFN3060-40
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 16Gbps
Supplier Device Package: 40-TQFN (3x6)
Signal Conditioning: Input Equalization
auf Bestellung 6998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.45 EUR
10+8.5 EUR
25+8.03 EUR
100+6.96 EUR
250+6.6 EUR
500+5.93 EUR
1000+5 EUR
Mindestbestellmenge: 2
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PS508LEX PS508-509.pdf
PS508LEX
Hersteller: Diodes Incorporated
Description: ANALOG SWITCH 17V,TSSOP-16,T&R,2
Produkt ist nicht verfügbar
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PS508LEX PS508-509.pdf
PS508LEX
Hersteller: Diodes Incorporated
Description: ANALOG SWITCH 17V,TSSOP-16,T&R,2
Produkt ist nicht verfügbar
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AP78L05WG-7
AP78L05WG-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 5V 100MA SOT23
Produkt ist nicht verfügbar
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PI7C9X1170ACLE PI7C9X1170.pdf
PI7C9X1170ACLE
Hersteller: Diodes Incorporated
Description: IC I2C/SPI TO UART 24TSSOP 62PC
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
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PI7C9X1170ACLEX PI7C9X1170.pdf
PI7C9X1170ACLEX
Hersteller: Diodes Incorporated
Description: IC I2C/SPI TO UART 24TSSOP 3K
Produkt ist nicht verfügbar
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PI7C9X1170BCLEX PI7C9X1170.pdf
PI7C9X1170BCLEX
Hersteller: Diodes Incorporated
Description: IC SPI TO UART BRDG 16TSSOP 2.5K
Produkt ist nicht verfügbar
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PI7C9X1170CZDEX PI7C9X1170.pdf
PI7C9X1170CZDEX
Hersteller: Diodes Incorporated
Description: IC SPI TO UART BRDGE 24TQFN 3.5K
Produkt ist nicht verfügbar
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PI7C9X1170BCLE PI7C9X1170.pdf
PI7C9X1170BCLE
Hersteller: Diodes Incorporated
Description: IC SPI TO UART BRDG 16TSSOP 96PC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PI7C9X1170ABLE
PI7C9X1170ABLE
Hersteller: Diodes Incorporated
Description: IC BRIDGE I2C/SPI TO UART
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PI7C9X1170ABLEX
PI7C9X1170ABLEX
Hersteller: Diodes Incorporated
Description: IC BRIDGE I2C/SPI TO UART
Produkt ist nicht verfügbar
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PI7C9X1170BBLE
PI7C9X1170BBLE
Hersteller: Diodes Incorporated
Description: IC BRIDGE I2C/SPI TO UART
Produkt ist nicht verfügbar
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PI7C9X1170BBLEX
PI7C9X1170BBLEX
Hersteller: Diodes Incorporated
Description: IC BRIDGE I2C/SPI TO UART
Produkt ist nicht verfügbar
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PI7C9X1170CZDE PI7C9X1170.pdf
PI7C9X1170CZDE
Hersteller: Diodes Incorporated
Description: IC SPI TO UART BRDG 24TQFN 490PC
Produkt ist nicht verfügbar
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AL1678-08BS7-13 AL1678-20B_10B_08B.pdf
AL1678-08BS7-13
Hersteller: Diodes Incorporated
Description: IC LED DRIVER OFFL NO 800MA 7SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Voltage - Output: 15V ~ 35V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 350kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 800mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 7-SO
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Produkt ist nicht verfügbar
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SBRT25U50SLP-13 SBRT25U50SLP.pdf
SBRT25U50SLP-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 50V 25A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 25A
Supplier Device Package: PowerDI5060-8
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 25 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBRT20M80SP5-13
SBRT20M80SP5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 80V 20A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 80 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SBRT20M60SP5-13 SBRT20M60SP5.pdf
SBRT20M60SP5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 20A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 65000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.53 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
SBRT20M60SP5-13 SBRT20M60SP5.pdf
SBRT20M60SP5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 20A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 70064 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
15+1.19 EUR
100+0.82 EUR
500+0.66 EUR
1000+0.61 EUR
2000+0.56 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
SBRT25M60SLP-13 SBRT25M60SLP.pdf
SBRT25M60SLP-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 25A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 25A
Supplier Device Package: PowerDI5060-8 (Type K)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 25 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Produkt ist nicht verfügbar
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AP7363-HA-7 AP7363.pdf
AP7363-HA-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR POS ADJ 1.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: U-DFN2030-8
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Over Current, Over Temperature
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
Mindestbestellmenge: 3000
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AP7363-HA-7 AP7363.pdf
AP7363-HA-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR POS ADJ 1.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: U-DFN2030-8
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Over Current, Over Temperature
auf Bestellung 30447 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
20+0.89 EUR
25+0.74 EUR
100+0.57 EUR
250+0.48 EUR
500+0.43 EUR
1000+0.38 EUR
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FL3200022 FL.pdf
FL3200022
Hersteller: Diodes Incorporated
Description: CRYSTAL 32.0000MHZ 16PF SMD
Produkt ist nicht verfügbar
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FL3200022 FL.pdf
FL3200022
Hersteller: Diodes Incorporated
Description: CRYSTAL 32.0000MHZ 16PF SMD
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FL3200037 FL.pdf
FL3200037
Hersteller: Diodes Incorporated
Description: CRYSTAL 32.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.030" (0.75mm)
ESR (Equivalent Series Resistance): 50 Ohms
Frequency: 32 MHz
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.55 EUR
6000+0.54 EUR
Mindestbestellmenge: 3000
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FL3200037 FL.pdf
FL3200037
Hersteller: Diodes Incorporated
Description: CRYSTAL 32.0000MHZ 8PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.030" (0.75mm)
ESR (Equivalent Series Resistance): 50 Ohms
Frequency: 32 MHz
auf Bestellung 6815 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
20+0.92 EUR
50+0.83 EUR
100+0.74 EUR
500+0.7 EUR
1000+0.59 EUR
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DMPH4015SK3Q-13 DMPH4015SK3Q.pdf
DMPH4015SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 14A/45A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.55 EUR
Mindestbestellmenge: 2500
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DMPH4015SK3Q-13 DMPH4015SK3Q.pdf
DMPH4015SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 14A/45A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5013 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
13+1.36 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
Mindestbestellmenge: 9
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DMTH6005LK3Q-13 DMTH6005LK3Q.pdf
DMTH6005LK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 90A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 140000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.84 EUR
5000+0.79 EUR
Mindestbestellmenge: 2500
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DMTH6005LK3Q-13 DMTH6005LK3Q.pdf
DMTH6005LK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 90A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 141698 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
10+1.9 EUR
100+1.29 EUR
500+1.02 EUR
1000+0.93 EUR
Mindestbestellmenge: 7
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DMTH6004SK3Q-13 DMTH6004SK3Q.pdf
DMTH6004SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 235000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.9 EUR
5000+0.88 EUR
Mindestbestellmenge: 2500
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DMTH6004SK3Q-13 DMTH6004SK3Q.pdf
DMTH6004SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 235350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
10+1.82 EUR
100+1.28 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 8
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DMNH6021SK3Q-13 DMNH6021SK3Q.pdf
DMNH6021SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 50A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 975000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.52 EUR
5000+0.5 EUR
7500+0.49 EUR
12500+0.48 EUR
Mindestbestellmenge: 2500
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DMNH6021SK3Q-13 DMNH6021SK3Q.pdf
DMNH6021SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 50A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 976626 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
100+0.77 EUR
500+0.66 EUR
1000+0.58 EUR
Mindestbestellmenge: 18
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DMNH6042SK3Q-13 DMNH6042SK3Q.pdf
DMNH6042SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 25A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMNH6042SK3Q-13 DMNH6042SK3Q.pdf
DMNH6042SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 25A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2351 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
15+1.2 EUR
100+0.82 EUR
500+0.65 EUR
1000+0.59 EUR
Mindestbestellmenge: 10
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DMTH6010SK3Q-13 DMTH6010SK3Q.pdf
DMTH6010SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH6010SK3Q-13 DMTH6010SK3Q.pdf
DMTH6010SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2285 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.95 EUR
12+1.58 EUR
100+1.11 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 10
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G53270004 G53270004_G.pdf
G53270004
Hersteller: Diodes Incorporated
Description: CRYSTAL 32.7680KHZ 12.5PF SMD
Produkt ist nicht verfügbar
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G53270004 G53270004_G.pdf
G53270004
Hersteller: Diodes Incorporated
Description: CRYSTAL 32.7680KHZ 12.5PF SMD
Produkt ist nicht verfügbar
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