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BZX84C36W-7 BZX84C36W-7 Diodes Incorporated ds30066.pdf Description: DIODE ZENER 36V 200MW SOT323
Packaging: Cut Tape (CT)
Part Status: Active
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48+0.37 EUR
75+0.24 EUR
104+0.17 EUR
500+0.14 EUR
1000+0.13 EUR
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KBP2005G KBP2005G Diodes Incorporated ds21205.pdf Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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PI3EQX16621ZLDEX PI3EQX16621ZLDEX Diodes Incorporated PI3EQX16621-Product-Brief.pdf Description: PCIE EQX REDRIVER W-QFN3060-40
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 16Gbps
Supplier Device Package: 40-TQFN (3x6)
Signal Conditioning: Input Equalization
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PI3EQX16621ZLDEX PI3EQX16621ZLDEX Diodes Incorporated PI3EQX16621-Product-Brief.pdf Description: PCIE EQX REDRIVER W-QFN3060-40
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 16Gbps
Supplier Device Package: 40-TQFN (3x6)
Signal Conditioning: Input Equalization
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100+6.96 EUR
250+6.6 EUR
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1000+5 EUR
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PS508LEX PS508LEX Diodes Incorporated PS508-509.pdf Description: ANALOG SWITCH 17V,TSSOP-16,T&R,2
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PS508LEX PS508LEX Diodes Incorporated PS508-509.pdf Description: ANALOG SWITCH 17V,TSSOP-16,T&R,2
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AP78L05WG-7 AP78L05WG-7 Diodes Incorporated Description: IC REG LINEAR 5V 100MA SOT23
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PI7C9X1170ACLE PI7C9X1170ACLE Diodes Incorporated PI7C9X1170.pdf Description: IC I2C/SPI TO UART 24TSSOP 62PC
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PI7C9X1170ACLEX PI7C9X1170ACLEX Diodes Incorporated PI7C9X1170.pdf Description: IC I2C/SPI TO UART 24TSSOP 3K
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PI7C9X1170BCLEX PI7C9X1170BCLEX Diodes Incorporated PI7C9X1170.pdf Description: IC SPI TO UART BRDG 16TSSOP 2.5K
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PI7C9X1170CZDEX PI7C9X1170CZDEX Diodes Incorporated PI7C9X1170.pdf Description: IC SPI TO UART BRDGE 24TQFN 3.5K
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PI7C9X1170BCLE PI7C9X1170BCLE Diodes Incorporated PI7C9X1170.pdf Description: IC SPI TO UART BRDG 16TSSOP 96PC
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PI7C9X1170ABLE PI7C9X1170ABLE Diodes Incorporated Description: IC BRIDGE I2C/SPI TO UART
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PI7C9X1170ABLEX PI7C9X1170ABLEX Diodes Incorporated Description: IC BRIDGE I2C/SPI TO UART
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PI7C9X1170BBLE PI7C9X1170BBLE Diodes Incorporated Description: IC BRIDGE I2C/SPI TO UART
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PI7C9X1170BBLEX PI7C9X1170BBLEX Diodes Incorporated Description: IC BRIDGE I2C/SPI TO UART
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PI7C9X1170CZDE PI7C9X1170CZDE Diodes Incorporated PI7C9X1170.pdf Description: IC SPI TO UART BRDG 24TQFN 490PC
Produkt ist nicht verfügbar
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AL1678-08BS7-13 AL1678-08BS7-13 Diodes Incorporated AL1678-20B_10B_08B.pdf Description: IC LED DRIVER OFFL NO 800MA 7SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Voltage - Output: 15V ~ 35V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 350kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 800mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 7-SO
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Produkt ist nicht verfügbar
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SBRT25U50SLP-13 SBRT25U50SLP-13 Diodes Incorporated SBRT25U50SLP.pdf Description: DIODE SBR 50V 25A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 25A
Supplier Device Package: PowerDI5060-8
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 25 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Produkt ist nicht verfügbar
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SBRT20M80SP5-13 SBRT20M80SP5-13 Diodes Incorporated Description: DIODE SBR 80V 20A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 80 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SBRT20M60SP5-13 SBRT20M60SP5-13 Diodes Incorporated SBRT20M60SP5.pdf Description: DIODE SBR 60V 20A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Qualification: AEC-Q101
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SBRT20M60SP5-13 SBRT20M60SP5-13 Diodes Incorporated SBRT20M60SP5.pdf Description: DIODE SBR 60V 20A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Qualification: AEC-Q101
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SBRT25M60SLP-13 SBRT25M60SLP-13 Diodes Incorporated SBRT25M60SLP.pdf Description: DIODE SBR 60V 25A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 25A
Supplier Device Package: PowerDI5060-8 (Type K)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 25 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Produkt ist nicht verfügbar
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AP7363-HA-7 AP7363-HA-7 Diodes Incorporated AP7363.pdf Description: IC REG LINEAR POS ADJ 1.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: U-DFN2030-8
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Over Current, Over Temperature
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AP7363-HA-7 AP7363-HA-7 Diodes Incorporated AP7363.pdf Description: IC REG LINEAR POS ADJ 1.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: U-DFN2030-8
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Over Current, Over Temperature
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25+0.74 EUR
100+0.57 EUR
250+0.48 EUR
500+0.43 EUR
1000+0.38 EUR
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FL3200022 FL3200022 Diodes Incorporated FL.pdf Description: CRYSTAL 32.0000MHZ 16PF SMD
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FL3200022 FL3200022 Diodes Incorporated FL.pdf Description: CRYSTAL 32.0000MHZ 16PF SMD
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FL3200037 FL3200037 Diodes Incorporated FL.pdf Description: CRYSTAL 32.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.030" (0.75mm)
ESR (Equivalent Series Resistance): 50 Ohms
Frequency: 32 MHz
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FL3200037 FL3200037 Diodes Incorporated FL.pdf Description: CRYSTAL 32.0000MHZ 8PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.030" (0.75mm)
ESR (Equivalent Series Resistance): 50 Ohms
Frequency: 32 MHz
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100+0.74 EUR
500+0.7 EUR
1000+0.59 EUR
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DMPH4015SK3Q-13 DMPH4015SK3Q-13 Diodes Incorporated DMPH4015SK3Q.pdf Description: MOSFET P-CH 40V 14A/45A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Qualification: AEC-Q101
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DMPH4015SK3Q-13 DMPH4015SK3Q-13 Diodes Incorporated DMPH4015SK3Q.pdf Description: MOSFET P-CH 40V 14A/45A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Qualification: AEC-Q101
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9+1.97 EUR
12+1.59 EUR
100+1.11 EUR
500+0.9 EUR
1000+0.83 EUR
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DMTH6005LK3Q-13 DMTH6005LK3Q-13 Diodes Incorporated DMTH6005LK3Q.pdf Description: MOSFET N-CH 60V 90A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
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DMTH6005LK3Q-13 DMTH6005LK3Q-13 Diodes Incorporated DMTH6005LK3Q.pdf Description: MOSFET N-CH 60V 90A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 141698 Stücke:
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100+1.29 EUR
500+1.02 EUR
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DMTH6004SK3Q-13 DMTH6004SK3Q-13 Diodes Incorporated DMTH6004SK3Q.pdf Description: MOSFET N-CH 60V 100A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 235000 Stücke:
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2500+0.9 EUR
5000+0.88 EUR
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DMTH6004SK3Q-13 DMTH6004SK3Q-13 Diodes Incorporated DMTH6004SK3Q.pdf Description: MOSFET N-CH 60V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Qualification: AEC-Q101
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8+2.34 EUR
10+1.82 EUR
100+1.28 EUR
500+1.08 EUR
1000+0.99 EUR
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DMNH6021SK3Q-13 DMNH6021SK3Q-13 Diodes Incorporated DMNH6021SK3Q.pdf Description: MOSFET N-CH 60V 50A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 975000 Stücke:
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2500+0.52 EUR
5000+0.5 EUR
7500+0.49 EUR
12500+0.48 EUR
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DMNH6021SK3Q-13 DMNH6021SK3Q-13 Diodes Incorporated DMNH6021SK3Q.pdf Description: MOSFET N-CH 60V 50A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Qualification: AEC-Q101
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DMNH6042SK3Q-13 DMNH6042SK3Q-13 Diodes Incorporated DMNH6042SK3Q.pdf Description: MOSFET N-CH 60V 25A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
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DMNH6042SK3Q-13 DMNH6042SK3Q-13 Diodes Incorporated DMNH6042SK3Q.pdf Description: MOSFET N-CH 60V 25A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
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DMTH6010SK3Q-13 DMTH6010SK3Q-13 Diodes Incorporated DMTH6010SK3Q.pdf Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH6010SK3Q-13 DMTH6010SK3Q-13 Diodes Incorporated DMTH6010SK3Q.pdf Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V
Qualification: AEC-Q101
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G53270004 G53270004 Diodes Incorporated G53270004_G.pdf Description: CRYSTAL 32.7680KHZ 12.5PF SMD
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G53270004 G53270004 Diodes Incorporated G53270004_G.pdf Description: CRYSTAL 32.7680KHZ 12.5PF SMD
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PT8A3290WE PT8A3290WE Diodes Incorporated PT8A3290-3297.pdf Description: HEATER CONTROLLER SO-8
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PT8A3290WEX PT8A3290WEX Diodes Incorporated PT8A3290-3297.pdf Description: HEATER CONTROLLER SO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3.5V ~ 5.5V
Applications: Heating Controller
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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74LVC1G06QW5-7 74LVC1G06QW5-7 Diodes Incorporated 74LVC1G06Q.pdf Description: IC INVERTER 1CH 1-INP SOT25
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: SOT-25
Input Logic Level - High: 1.07V ~ 3.85V
Input Logic Level - Low: 0.58V ~ 1.65V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
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74LVC1G06QW5-7 74LVC1G06QW5-7 Diodes Incorporated 74LVC1G06Q.pdf Description: IC INVERTER 1CH 1-INP SOT25
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: SOT-25
Input Logic Level - High: 1.07V ~ 3.85V
Input Logic Level - Low: 0.58V ~ 1.65V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
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74LVC1G00QW5-7 74LVC1G00QW5-7 Diodes Incorporated 74LVC1G00Q.pdf Description: IC GATE NAND 1CH 2-INP SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-25
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
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9000+0.1 EUR
15000+0.095 EUR
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74LVC1G00QW5-7 74LVC1G00QW5-7 Diodes Incorporated 74LVC1G00Q.pdf Description: IC GATE NAND 1CH 2-INP SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-25
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
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WT21120001 Diodes Incorporated Description: TEMP COMP XO SEAM2520 T&R 3K
Produkt ist nicht verfügbar
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WT21200002 Diodes Incorporated Description: TEMP COMP XO SEAM2520 T&R 3K
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WT21260003 Diodes Incorporated Description: TEMP COMP XO SEAM2520 T&R 3K
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WT21320001 Diodes Incorporated Description: TEMP COMP XO SEAM2520 T&R 3K
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WT21390001 Diodes Incorporated Description: TEMP COMP XO SEAM2520 T&R 3K
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FL1300034 FL1300034 Diodes Incorporated Description: CRYSTAL 13.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 13 MHz
Supplier Device Package: 4-SMD (3.2x2.5)
Produkt ist nicht verfügbar
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JX5011C0056.000000 JX5011C0056.000000 Diodes Incorporated JX501.pdf Description: XTAL OSC XO 56.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 45mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.053" (1.35mm)
Frequency: 56 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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BZT52C2V0Q-7-F BZT52C2V0Q-7-F Diodes Incorporated Description: DIODE ZENER 2V 370MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±4.5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 150 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AP2810CM-G1 AP2810CM-G1 Diodes Incorporated AP2810.pdf Description: IC PWR SWITCH N-CHAN 1:1 8SOIC
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AP2810CMM-G1 AP2810CMM-G1 Diodes Incorporated AP2810.pdf Description: IC PWR SWITCH N-CHAN 1:1 8MSOP
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AP2810CMMTR-G1 AP2810CMMTR-G1 Diodes Incorporated AP2810.pdf Description: IC PWR SWITCH N-CHAN 1:1 8MSOP
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BZX84C36W-7 ds30066.pdf
BZX84C36W-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 36V 200MW SOT323
Packaging: Cut Tape (CT)
Part Status: Active
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48+0.37 EUR
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KBP2005G ds21205.pdf
KBP2005G
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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PI3EQX16621ZLDEX PI3EQX16621-Product-Brief.pdf
PI3EQX16621ZLDEX
Hersteller: Diodes Incorporated
Description: PCIE EQX REDRIVER W-QFN3060-40
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 16Gbps
Supplier Device Package: 40-TQFN (3x6)
Signal Conditioning: Input Equalization
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PI3EQX16621ZLDEX PI3EQX16621-Product-Brief.pdf
PI3EQX16621ZLDEX
Hersteller: Diodes Incorporated
Description: PCIE EQX REDRIVER W-QFN3060-40
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 16Gbps
Supplier Device Package: 40-TQFN (3x6)
Signal Conditioning: Input Equalization
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2+9.45 EUR
10+8.5 EUR
25+8.03 EUR
100+6.96 EUR
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1000+5 EUR
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PS508LEX PS508-509.pdf
PS508LEX
Hersteller: Diodes Incorporated
Description: ANALOG SWITCH 17V,TSSOP-16,T&R,2
Produkt ist nicht verfügbar
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PS508LEX PS508-509.pdf
PS508LEX
Hersteller: Diodes Incorporated
Description: ANALOG SWITCH 17V,TSSOP-16,T&R,2
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AP78L05WG-7
AP78L05WG-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 5V 100MA SOT23
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PI7C9X1170ACLE PI7C9X1170.pdf
PI7C9X1170ACLE
Hersteller: Diodes Incorporated
Description: IC I2C/SPI TO UART 24TSSOP 62PC
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PI7C9X1170ACLEX PI7C9X1170.pdf
PI7C9X1170ACLEX
Hersteller: Diodes Incorporated
Description: IC I2C/SPI TO UART 24TSSOP 3K
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PI7C9X1170BCLEX PI7C9X1170.pdf
PI7C9X1170BCLEX
Hersteller: Diodes Incorporated
Description: IC SPI TO UART BRDG 16TSSOP 2.5K
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PI7C9X1170CZDEX PI7C9X1170.pdf
PI7C9X1170CZDEX
Hersteller: Diodes Incorporated
Description: IC SPI TO UART BRDGE 24TQFN 3.5K
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PI7C9X1170BCLE PI7C9X1170.pdf
PI7C9X1170BCLE
Hersteller: Diodes Incorporated
Description: IC SPI TO UART BRDG 16TSSOP 96PC
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PI7C9X1170ABLE
PI7C9X1170ABLE
Hersteller: Diodes Incorporated
Description: IC BRIDGE I2C/SPI TO UART
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PI7C9X1170ABLEX
PI7C9X1170ABLEX
Hersteller: Diodes Incorporated
Description: IC BRIDGE I2C/SPI TO UART
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PI7C9X1170BBLE
PI7C9X1170BBLE
Hersteller: Diodes Incorporated
Description: IC BRIDGE I2C/SPI TO UART
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PI7C9X1170BBLEX
PI7C9X1170BBLEX
Hersteller: Diodes Incorporated
Description: IC BRIDGE I2C/SPI TO UART
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PI7C9X1170CZDE PI7C9X1170.pdf
PI7C9X1170CZDE
Hersteller: Diodes Incorporated
Description: IC SPI TO UART BRDG 24TQFN 490PC
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AL1678-08BS7-13 AL1678-20B_10B_08B.pdf
AL1678-08BS7-13
Hersteller: Diodes Incorporated
Description: IC LED DRIVER OFFL NO 800MA 7SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Voltage - Output: 15V ~ 35V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 350kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 800mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 7-SO
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Produkt ist nicht verfügbar
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SBRT25U50SLP-13 SBRT25U50SLP.pdf
SBRT25U50SLP-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 50V 25A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 25A
Supplier Device Package: PowerDI5060-8
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 25 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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SBRT20M80SP5-13
SBRT20M80SP5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 80V 20A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 80 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SBRT20M60SP5-13 SBRT20M60SP5.pdf
SBRT20M60SP5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 20A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 65000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.53 EUR
Mindestbestellmenge: 5000
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SBRT20M60SP5-13 SBRT20M60SP5.pdf
SBRT20M60SP5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 20A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 70064 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
15+1.19 EUR
100+0.82 EUR
500+0.66 EUR
1000+0.61 EUR
2000+0.56 EUR
Mindestbestellmenge: 10
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SBRT25M60SLP-13 SBRT25M60SLP.pdf
SBRT25M60SLP-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 25A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 25A
Supplier Device Package: PowerDI5060-8 (Type K)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 25 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Produkt ist nicht verfügbar
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AP7363-HA-7 AP7363.pdf
AP7363-HA-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR POS ADJ 1.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: U-DFN2030-8
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Over Current, Over Temperature
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
Mindestbestellmenge: 3000
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AP7363-HA-7 AP7363.pdf
AP7363-HA-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR POS ADJ 1.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: U-DFN2030-8
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Over Current, Over Temperature
auf Bestellung 30447 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
20+0.89 EUR
25+0.74 EUR
100+0.57 EUR
250+0.48 EUR
500+0.43 EUR
1000+0.38 EUR
Mindestbestellmenge: 12
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FL3200022 FL.pdf
FL3200022
Hersteller: Diodes Incorporated
Description: CRYSTAL 32.0000MHZ 16PF SMD
Produkt ist nicht verfügbar
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FL3200022 FL.pdf
FL3200022
Hersteller: Diodes Incorporated
Description: CRYSTAL 32.0000MHZ 16PF SMD
Produkt ist nicht verfügbar
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FL3200037 FL.pdf
FL3200037
Hersteller: Diodes Incorporated
Description: CRYSTAL 32.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.030" (0.75mm)
ESR (Equivalent Series Resistance): 50 Ohms
Frequency: 32 MHz
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.55 EUR
6000+0.54 EUR
Mindestbestellmenge: 3000
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FL3200037 FL.pdf
FL3200037
Hersteller: Diodes Incorporated
Description: CRYSTAL 32.0000MHZ 8PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.030" (0.75mm)
ESR (Equivalent Series Resistance): 50 Ohms
Frequency: 32 MHz
auf Bestellung 6815 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
20+0.92 EUR
50+0.83 EUR
100+0.74 EUR
500+0.7 EUR
1000+0.59 EUR
Mindestbestellmenge: 16
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DMPH4015SK3Q-13 DMPH4015SK3Q.pdf
DMPH4015SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 14A/45A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.77 EUR
Mindestbestellmenge: 2500
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DMPH4015SK3Q-13 DMPH4015SK3Q.pdf
DMPH4015SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 14A/45A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 7397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
12+1.59 EUR
100+1.11 EUR
500+0.9 EUR
1000+0.83 EUR
Mindestbestellmenge: 9
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DMTH6005LK3Q-13 DMTH6005LK3Q.pdf
DMTH6005LK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 90A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 140000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.84 EUR
5000+0.79 EUR
Mindestbestellmenge: 2500
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DMTH6005LK3Q-13 DMTH6005LK3Q.pdf
DMTH6005LK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 90A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 141698 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
10+1.9 EUR
100+1.29 EUR
500+1.02 EUR
1000+0.93 EUR
Mindestbestellmenge: 7
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DMTH6004SK3Q-13 DMTH6004SK3Q.pdf
DMTH6004SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 235000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.9 EUR
5000+0.88 EUR
Mindestbestellmenge: 2500
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DMTH6004SK3Q-13 DMTH6004SK3Q.pdf
DMTH6004SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 235350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
10+1.82 EUR
100+1.28 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 8
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DMNH6021SK3Q-13 DMNH6021SK3Q.pdf
DMNH6021SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 50A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 975000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.52 EUR
5000+0.5 EUR
7500+0.49 EUR
12500+0.48 EUR
Mindestbestellmenge: 2500
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DMNH6021SK3Q-13 DMNH6021SK3Q.pdf
DMNH6021SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 50A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 976626 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
100+0.77 EUR
500+0.66 EUR
1000+0.58 EUR
Mindestbestellmenge: 18
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DMNH6042SK3Q-13 DMNH6042SK3Q.pdf
DMNH6042SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 25A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 42500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.57 EUR
5000+0.56 EUR
7500+0.55 EUR
Mindestbestellmenge: 2500
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DMNH6042SK3Q-13 DMNH6042SK3Q.pdf
DMNH6042SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 25A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 44856 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
14+1.26 EUR
100+0.86 EUR
500+0.7 EUR
1000+0.64 EUR
Mindestbestellmenge: 10
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DMTH6010SK3Q-13 DMTH6010SK3Q.pdf
DMTH6010SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH6010SK3Q-13 DMTH6010SK3Q.pdf
DMTH6010SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2285 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.95 EUR
12+1.58 EUR
100+1.11 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 10
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G53270004 G53270004_G.pdf
G53270004
Hersteller: Diodes Incorporated
Description: CRYSTAL 32.7680KHZ 12.5PF SMD
Produkt ist nicht verfügbar
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G53270004 G53270004_G.pdf
G53270004
Hersteller: Diodes Incorporated
Description: CRYSTAL 32.7680KHZ 12.5PF SMD
Produkt ist nicht verfügbar
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PT8A3290WE PT8A3290-3297.pdf
PT8A3290WE
Hersteller: Diodes Incorporated
Description: HEATER CONTROLLER SO-8
Produkt ist nicht verfügbar
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PT8A3290WEX PT8A3290-3297.pdf
PT8A3290WEX
Hersteller: Diodes Incorporated
Description: HEATER CONTROLLER SO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3.5V ~ 5.5V
Applications: Heating Controller
Supplier Device Package: 8-SOIC
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74LVC1G06QW5-7 74LVC1G06Q.pdf
74LVC1G06QW5-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 1CH 1-INP SOT25
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: SOT-25
Input Logic Level - High: 1.07V ~ 3.85V
Input Logic Level - Low: 0.58V ~ 1.65V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
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74LVC1G06QW5-7 74LVC1G06Q.pdf
74LVC1G06QW5-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 1CH 1-INP SOT25
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: SOT-25
Input Logic Level - High: 1.07V ~ 3.85V
Input Logic Level - Low: 0.58V ~ 1.65V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
auf Bestellung 4504 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
47+0.37 EUR
58+0.31 EUR
100+0.23 EUR
250+0.19 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 28
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74LVC1G00QW5-7 74LVC1G00Q.pdf
74LVC1G00QW5-7
Hersteller: Diodes Incorporated
Description: IC GATE NAND 1CH 2-INP SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-25
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
auf Bestellung 129000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
9000+0.1 EUR
15000+0.095 EUR
21000+0.091 EUR
30000+0.086 EUR
75000+0.078 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G00QW5-7 74LVC1G00Q.pdf
74LVC1G00QW5-7
Hersteller: Diodes Incorporated
Description: IC GATE NAND 1CH 2-INP SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-25
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
auf Bestellung 131749 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
47+0.37 EUR
58+0.3 EUR
100+0.23 EUR
250+0.19 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 28
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WT21120001
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM2520 T&R 3K
Produkt ist nicht verfügbar
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WT21200002
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM2520 T&R 3K
Produkt ist nicht verfügbar
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WT21260003
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM2520 T&R 3K
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WT21320001
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM2520 T&R 3K
Produkt ist nicht verfügbar
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WT21390001
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM2520 T&R 3K
Produkt ist nicht verfügbar
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FL1300034
FL1300034
Hersteller: Diodes Incorporated
Description: CRYSTAL 13.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 13 MHz
Supplier Device Package: 4-SMD (3.2x2.5)
Produkt ist nicht verfügbar
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JX5011C0056.000000 JX501.pdf
JX5011C0056.000000
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 56.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 45mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.053" (1.35mm)
Frequency: 56 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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BZT52C2V0Q-7-F
BZT52C2V0Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2V 370MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±4.5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 150 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AP2810CM-G1 AP2810.pdf
AP2810CM-G1
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8SOIC
Produkt ist nicht verfügbar
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AP2810CMM-G1 AP2810.pdf
AP2810CMM-G1
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8MSOP
Produkt ist nicht verfügbar
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AP2810CMMTR-G1 AP2810.pdf
AP2810CMMTR-G1
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8MSOP
Produkt ist nicht verfügbar
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