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DMPH4015SK3Q-13 DMPH4015SK3Q-13 Diodes Incorporated DMPH4015SK3Q.pdf Description: MOSFET P-CH 40V 14A/45A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Qualification: AEC-Q101
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500+0.90 EUR
1000+0.83 EUR
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DMTH6005LK3Q-13 DMTH6005LK3Q-13 Diodes Incorporated DMTH6005LK3Q.pdf Description: MOSFET N-CH 60V 90A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
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DMTH6005LK3Q-13 DMTH6005LK3Q-13 Diodes Incorporated DMTH6005LK3Q.pdf Description: MOSFET N-CH 60V 90A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
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DMTH6004SK3Q-13 DMTH6004SK3Q-13 Diodes Incorporated DMTH6004SK3Q.pdf Description: MOSFET N-CH 60V 100A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Qualification: AEC-Q101
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DMTH6004SK3Q-13 DMTH6004SK3Q-13 Diodes Incorporated DMTH6004SK3Q.pdf Description: MOSFET N-CH 60V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Qualification: AEC-Q101
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DMNH6021SK3Q-13 DMNH6021SK3Q-13 Diodes Incorporated DMNH6021SK3Q.pdf Description: MOSFET N-CH 60V 50A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Qualification: AEC-Q101
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DMNH6021SK3Q-13 DMNH6021SK3Q-13 Diodes Incorporated DMNH6021SK3Q.pdf Description: MOSFET N-CH 60V 50A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Qualification: AEC-Q101
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DMNH6042SK3Q-13 DMNH6042SK3Q-13 Diodes Incorporated DMNH6042SK3Q.pdf Description: MOSFET N-CH 60V 25A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
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DMNH6042SK3Q-13 DMNH6042SK3Q-13 Diodes Incorporated DMNH6042SK3Q.pdf Description: MOSFET N-CH 60V 25A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
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14+1.26 EUR
100+0.86 EUR
500+0.70 EUR
1000+0.64 EUR
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DMTH6010SK3Q-13 DMTH6010SK3Q-13 Diodes Incorporated DMTH6010SK3Q.pdf Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V
Qualification: AEC-Q101
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DMTH6010SK3Q-13 DMTH6010SK3Q-13 Diodes Incorporated DMTH6010SK3Q.pdf Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2285 Stücke:
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12+1.58 EUR
100+1.11 EUR
500+0.94 EUR
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G53270004 G53270004 Diodes Incorporated G53270004_G.pdf Description: CRYSTAL 32.7680KHZ 12.5PF SMD
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G53270004 G53270004 Diodes Incorporated G53270004_G.pdf Description: CRYSTAL 32.7680KHZ 12.5PF SMD
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PT8A3290WE PT8A3290WE Diodes Incorporated PT8A3290-3297.pdf Description: HEATER CONTROLLER SO-8
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PT8A3290WEX PT8A3290WEX Diodes Incorporated PT8A3290-3297.pdf Description: HEATER CONTROLLER SO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3.5V ~ 5.5V
Applications: Heating Controller
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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74LVC1G06QW5-7 74LVC1G06QW5-7 Diodes Incorporated 74LVC1G06Q.pdf Description: IC INVERTER 1CH 1-INP SOT25
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: SOT-25
Input Logic Level - High: 1.07V ~ 3.85V
Input Logic Level - Low: 0.58V ~ 1.65V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
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74LVC1G06QW5-7 74LVC1G06QW5-7 Diodes Incorporated 74LVC1G06Q.pdf Description: IC INVERTER 1CH 1-INP SOT25
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: SOT-25
Input Logic Level - High: 1.07V ~ 3.85V
Input Logic Level - Low: 0.58V ~ 1.65V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
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47+0.37 EUR
58+0.31 EUR
100+0.23 EUR
250+0.19 EUR
500+0.17 EUR
1000+0.15 EUR
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74LVC1G00QW5-7 74LVC1G00QW5-7 Diodes Incorporated 74LVC1G00Q.pdf Description: IC GATE NAND 1CH 2-INP SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-25
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
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6000+0.11 EUR
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74LVC1G00QW5-7 74LVC1G00QW5-7 Diodes Incorporated 74LVC1G00Q.pdf Description: IC GATE NAND 1CH 2-INP SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-25
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
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250+0.19 EUR
500+0.17 EUR
1000+0.15 EUR
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WT21120001 Diodes Incorporated Description: TEMP COMP XO SEAM2520 T&R 3K
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WT21200002 Diodes Incorporated Description: TEMP COMP XO SEAM2520 T&R 3K
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WT21260003 Diodes Incorporated Description: TEMP COMP XO SEAM2520 T&R 3K
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WT21320001 Diodes Incorporated Description: TEMP COMP XO SEAM2520 T&R 3K
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WT21390001 Diodes Incorporated Description: TEMP COMP XO SEAM2520 T&R 3K
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FL1300034 FL1300034 Diodes Incorporated Description: CRYSTAL 13.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 13 MHz
Supplier Device Package: 4-SMD (3.2x2.5)
Produkt ist nicht verfügbar
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JX5011C0056.000000 JX5011C0056.000000 Diodes Incorporated JX501.pdf Description: XTAL OSC XO 56.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 45mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.053" (1.35mm)
Frequency: 56 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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BZT52C2V0Q-7-F BZT52C2V0Q-7-F Diodes Incorporated Description: DIODE ZENER 2V 370MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±4.5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 150 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AP2810CM-G1 AP2810CM-G1 Diodes Incorporated AP2810.pdf Description: IC PWR SWITCH N-CHAN 1:1 8SOIC
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AP2810CMM-G1 AP2810CMM-G1 Diodes Incorporated AP2810.pdf Description: IC PWR SWITCH N-CHAN 1:1 8MSOP
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AP2810CMMTR-G1 AP2810CMMTR-G1 Diodes Incorporated AP2810.pdf Description: IC PWR SWITCH N-CHAN 1:1 8MSOP
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AP2810CMTR-G1 AP2810CMTR-G1 Diodes Incorporated AP2810.pdf Description: IC PWR SWITCH N-CHAN 1:1 8SOIC
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DGD0506AM10-13 DGD0506AM10-13 Diodes Incorporated DGD0506A.pdf Description: IC GATE DRVR HALF-BRIDGE 10MSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 14V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 50 V
Supplier Device Package: 10-MSOP
Rise / Fall Time (Typ): 17ns, 12ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
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DGD0506AM10-13 DGD0506AM10-13 Diodes Incorporated DGD0506A.pdf Description: IC GATE DRVR HALF-BRIDGE 10MSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 14V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 50 V
Supplier Device Package: 10-MSOP
Rise / Fall Time (Typ): 17ns, 12ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
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FL2600140 FL2600140 Diodes Incorporated FL.pdf Description: CRYSTAL 26.0000MHZ 12PF SMD
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FL1600140Q FL1600140Q Diodes Incorporated FL.pdf Description: CRYSTAL CERAMIC SEAM3225 T&R 3K
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FX1350032 FX1350032 Diodes Incorporated F6_FX.pdf Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.236" L x 0.138" W (6.00mm x 3.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Height - Seated (Max): 0.053" (1.35mm)
Part Status: Active
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SMAJ51CAQ-13-F SMAJ51CAQ-13-F Diodes Incorporated SMAJ5.0CAQ-SMAJ200CAQ.pdf Description: TVS DIODE 51VWM 82.4VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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AL1678-20BS7-13 AL1678-20BS7-13 Diodes Incorporated AL1678-20B_10B_08B.pdf Description: IC LED OFFLINE DRIVER SO-7
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AL1678-10BS7-13 AL1678-10BS7-13 Diodes Incorporated AL1678-20B_10B_08B.pdf Description: IC LED OFFLINE DRIVER SO-7
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B170-13-F B170-13-F Diodes Incorporated B170B_B1100B.pdf Description: DIODE SCHOTTKY 70V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 70 V
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B170-13-F B170-13-F Diodes Incorporated B170B_B1100B.pdf Description: DIODE SCHOTTKY 70V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 70 V
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FM2400005 Diodes Incorporated FM-3-3V.pdf Description: CLOCK SAW OSCILLATOR SEAM2016 T&
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FM2400012 Diodes Incorporated FM_2-5V.pdf Description: CLOCK SAW OSCILLATOR SEAM2016 T&
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AZV393MTR-G1 AZV393MTR-G1 Diodes Incorporated AZV393.pdf Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 2.5V ~ 5.5V
Supplier Device Package: 8-SOIC
Current - Quiescent (Max): 200µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 84mA
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AP22815BWT-EVM AP22815BWT-EVM Diodes Incorporated Description: EVAL BOARD FOR AP22815B
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: AP22815B
Supplied Contents: Board(s)
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AP22815AWT-EVM Diodes Incorporated Description: EVAL BOARD FOR AP22815A
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: AP22815A
Supplied Contents: Board(s)
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DMC3025LNS-13 DMC3025LNS-13 Diodes Incorporated DMC3025LNS.pdf Description: MOSFET N/P-CH 30V 7.2A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 6.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Qualification: AEC-Q101
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DMC3025LNS-7 DMC3025LNS-7 Diodes Incorporated DMC3025LNS.pdf Description: MOSFET N/P-CH 30V 7.2A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 6.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Qualification: AEC-Q101
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DMC3025LDV-7 DMC3025LDV-7 Diodes Incorporated DMC3025LDV.pdf Description: MOSFET N/P-CH 15A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Qualification: AEC-Q101
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IMX8-7 IMX8-7 Diodes Incorporated IMX8.pdf Description: TRANS 2NPN 120V 0.05A SOT26
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FL1200051 FL1200051 Diodes Incorporated FL.pdf Description: CRYSTAL 12.0000MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 12 MHz
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FN1200051 Diodes Incorporated Description: CLOCK SAW OSCILLATOR SEAM7050 T&
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AP3512EMTR-G1 AP3512EMTR-G1 Diodes Incorporated AP3512E.pdf Description: IC REG BUCK ADJUSTABLE 2A 8SOIC
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AP3512EMTR-G1 AP3512EMTR-G1 Diodes Incorporated AP3512E.pdf Description: IC REG BUCK ADJUSTABLE 2A 8SOIC
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DMN53D0LDW-13 DMN53D0LDW-13 Diodes Incorporated DMN53D0LDW.pdf Description: MOSFET 2N-CH 50V 0.36A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
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DMN53D0LDW-13 DMN53D0LDW-13 Diodes Incorporated DMN53D0LDW.pdf Description: MOSFET 2N-CH 50V 0.36A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
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DDZ13ASF-7 DDZ13ASF-7 Diodes Incorporated ds31987.pdf Description: DIODE ZENER 12.43V 500MW SOD323F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12.43 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 11.5 V
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DDZ13ASF-7 DDZ13ASF-7 Diodes Incorporated ds31987.pdf Description: DIODE ZENER 12.43V 500MW SOD323F
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12.43 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 11.5 V
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BZX84C47-7-F BZX84C47-7-F Diodes Incorporated ds30370.pdf Description: DIODE ZENER 47V 300MW SOT23-3
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BZX84C47-7-F BZX84C47-7-F Diodes Incorporated ds30370.pdf Description: DIODE ZENER 47V 300MW SOT23-3
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DMPH4015SK3Q-13 DMPH4015SK3Q.pdf
DMPH4015SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 14A/45A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Qualification: AEC-Q101
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DMTH6005LK3Q-13 DMTH6005LK3Q.pdf
DMTH6005LK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 90A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
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DMTH6005LK3Q-13 DMTH6005LK3Q.pdf
DMTH6005LK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 90A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
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7+2.69 EUR
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DMTH6004SK3Q-13 DMTH6004SK3Q.pdf
DMTH6004SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Qualification: AEC-Q101
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DMTH6004SK3Q-13 DMTH6004SK3Q.pdf
DMTH6004SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 235350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
10+1.82 EUR
100+1.28 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 8
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DMNH6021SK3Q-13 DMNH6021SK3Q.pdf
DMNH6021SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 50A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 975000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.52 EUR
5000+0.50 EUR
7500+0.49 EUR
12500+0.48 EUR
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DMNH6021SK3Q-13 DMNH6021SK3Q.pdf
DMNH6021SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 50A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 976626 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
100+0.77 EUR
500+0.66 EUR
1000+0.58 EUR
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DMNH6042SK3Q-13 DMNH6042SK3Q.pdf
DMNH6042SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 25A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 42500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.57 EUR
5000+0.56 EUR
7500+0.55 EUR
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DMNH6042SK3Q-13 DMNH6042SK3Q.pdf
DMNH6042SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 25A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 44856 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
14+1.26 EUR
100+0.86 EUR
500+0.70 EUR
1000+0.64 EUR
Mindestbestellmenge: 10
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DMTH6010SK3Q-13 DMTH6010SK3Q.pdf
DMTH6010SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH6010SK3Q-13 DMTH6010SK3Q.pdf
DMTH6010SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2285 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.95 EUR
12+1.58 EUR
100+1.11 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 10
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G53270004 G53270004_G.pdf
G53270004
Hersteller: Diodes Incorporated
Description: CRYSTAL 32.7680KHZ 12.5PF SMD
Produkt ist nicht verfügbar
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G53270004 G53270004_G.pdf
G53270004
Hersteller: Diodes Incorporated
Description: CRYSTAL 32.7680KHZ 12.5PF SMD
Produkt ist nicht verfügbar
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PT8A3290WE PT8A3290-3297.pdf
PT8A3290WE
Hersteller: Diodes Incorporated
Description: HEATER CONTROLLER SO-8
Produkt ist nicht verfügbar
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PT8A3290WEX PT8A3290-3297.pdf
PT8A3290WEX
Hersteller: Diodes Incorporated
Description: HEATER CONTROLLER SO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3.5V ~ 5.5V
Applications: Heating Controller
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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74LVC1G06QW5-7 74LVC1G06Q.pdf
74LVC1G06QW5-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 1CH 1-INP SOT25
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: SOT-25
Input Logic Level - High: 1.07V ~ 3.85V
Input Logic Level - Low: 0.58V ~ 1.65V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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74LVC1G06QW5-7 74LVC1G06Q.pdf
74LVC1G06QW5-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 1CH 1-INP SOT25
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: SOT-25
Input Logic Level - High: 1.07V ~ 3.85V
Input Logic Level - Low: 0.58V ~ 1.65V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
auf Bestellung 4504 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
47+0.37 EUR
58+0.31 EUR
100+0.23 EUR
250+0.19 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 28
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74LVC1G00QW5-7 74LVC1G00Q.pdf
74LVC1G00QW5-7
Hersteller: Diodes Incorporated
Description: IC GATE NAND 1CH 2-INP SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-25
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
auf Bestellung 129000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
9000+0.10 EUR
15000+0.10 EUR
21000+0.09 EUR
30000+0.09 EUR
75000+0.08 EUR
Mindestbestellmenge: 3000
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74LVC1G00QW5-7 74LVC1G00Q.pdf
74LVC1G00QW5-7
Hersteller: Diodes Incorporated
Description: IC GATE NAND 1CH 2-INP SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-25
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
auf Bestellung 131749 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
47+0.37 EUR
58+0.30 EUR
100+0.23 EUR
250+0.19 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 28
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WT21120001
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM2520 T&R 3K
Produkt ist nicht verfügbar
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WT21200002
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM2520 T&R 3K
Produkt ist nicht verfügbar
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WT21260003
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM2520 T&R 3K
Produkt ist nicht verfügbar
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WT21320001
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM2520 T&R 3K
Produkt ist nicht verfügbar
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WT21390001
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM2520 T&R 3K
Produkt ist nicht verfügbar
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FL1300034
FL1300034
Hersteller: Diodes Incorporated
Description: CRYSTAL 13.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 13 MHz
Supplier Device Package: 4-SMD (3.2x2.5)
Produkt ist nicht verfügbar
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JX5011C0056.000000 JX501.pdf
JX5011C0056.000000
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 56.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 45mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.053" (1.35mm)
Frequency: 56 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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BZT52C2V0Q-7-F
BZT52C2V0Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2V 370MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±4.5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 150 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AP2810CM-G1 AP2810.pdf
AP2810CM-G1
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8SOIC
Produkt ist nicht verfügbar
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AP2810CMM-G1 AP2810.pdf
AP2810CMM-G1
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8MSOP
Produkt ist nicht verfügbar
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AP2810CMMTR-G1 AP2810.pdf
AP2810CMMTR-G1
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8MSOP
Produkt ist nicht verfügbar
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AP2810CMTR-G1 AP2810.pdf
AP2810CMTR-G1
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8SOIC
Produkt ist nicht verfügbar
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DGD0506AM10-13 DGD0506A.pdf
DGD0506AM10-13
Hersteller: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 10MSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 14V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 50 V
Supplier Device Package: 10-MSOP
Rise / Fall Time (Typ): 17ns, 12ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 410000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.30 EUR
5000+0.27 EUR
7500+0.26 EUR
12500+0.24 EUR
17500+0.23 EUR
62500+0.22 EUR
Mindestbestellmenge: 2500
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DGD0506AM10-13 DGD0506A.pdf
DGD0506AM10-13
Hersteller: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 10MSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 14V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 50 V
Supplier Device Package: 10-MSOP
Rise / Fall Time (Typ): 17ns, 12ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 414742 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
22+0.80 EUR
27+0.66 EUR
100+0.50 EUR
250+0.43 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 14
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FL2600140 FL.pdf
FL2600140
Hersteller: Diodes Incorporated
Description: CRYSTAL 26.0000MHZ 12PF SMD
Produkt ist nicht verfügbar
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FL1600140Q FL.pdf
FL1600140Q
Hersteller: Diodes Incorporated
Description: CRYSTAL CERAMIC SEAM3225 T&R 3K
Produkt ist nicht verfügbar
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FX1350032 F6_FX.pdf
FX1350032
Hersteller: Diodes Incorporated
Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.236" L x 0.138" W (6.00mm x 3.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Height - Seated (Max): 0.053" (1.35mm)
Part Status: Active
Produkt ist nicht verfügbar
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SMAJ51CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ51CAQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 51VWM 82.4VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.17 EUR
Mindestbestellmenge: 5000
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AL1678-20BS7-13 AL1678-20B_10B_08B.pdf
AL1678-20BS7-13
Hersteller: Diodes Incorporated
Description: IC LED OFFLINE DRIVER SO-7
Produkt ist nicht verfügbar
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AL1678-10BS7-13 AL1678-20B_10B_08B.pdf
AL1678-10BS7-13
Hersteller: Diodes Incorporated
Description: IC LED OFFLINE DRIVER SO-7
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
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B170-13-F B170B_B1100B.pdf
B170-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 70V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 70 V
auf Bestellung 125000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.41 EUR
10000+0.39 EUR
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B170-13-F B170B_B1100B.pdf
B170-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 70V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 70 V
auf Bestellung 130041 Stücke:
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Anzahl Preis
25+0.72 EUR
36+0.49 EUR
100+0.39 EUR
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FM2400005 FM-3-3V.pdf
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM2016 T&
Produkt ist nicht verfügbar
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FM2400012 FM_2-5V.pdf
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM2016 T&
Produkt ist nicht verfügbar
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AZV393MTR-G1 AZV393.pdf
AZV393MTR-G1
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 2.5V ~ 5.5V
Supplier Device Package: 8-SOIC
Current - Quiescent (Max): 200µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 84mA
auf Bestellung 4000 Stücke:
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Anzahl Preis
4000+0.23 EUR
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AP22815BWT-EVM
AP22815BWT-EVM
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP22815B
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: AP22815B
Supplied Contents: Board(s)
auf Bestellung 1 Stücke:
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1+83.72 EUR
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AP22815AWT-EVM
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP22815A
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: AP22815A
Supplied Contents: Board(s)
auf Bestellung 3 Stücke:
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Anzahl Preis
1+90.16 EUR
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DMC3025LNS-13 DMC3025LNS.pdf
DMC3025LNS-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 7.2A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 6.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMC3025LNS-7 DMC3025LNS.pdf
DMC3025LNS-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 7.2A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 6.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMC3025LDV-7 DMC3025LDV.pdf
DMC3025LDV-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 15A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.35 EUR
6000+0.33 EUR
10000+0.31 EUR
Mindestbestellmenge: 2000
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IMX8-7 IMX8.pdf
IMX8-7
Hersteller: Diodes Incorporated
Description: TRANS 2NPN 120V 0.05A SOT26
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FL1200051 FL.pdf
FL1200051
Hersteller: Diodes Incorporated
Description: CRYSTAL 12.0000MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 12 MHz
Produkt ist nicht verfügbar
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FN1200051
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Produkt ist nicht verfügbar
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AP3512EMTR-G1 AP3512E.pdf
AP3512EMTR-G1
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJUSTABLE 2A 8SOIC
Produkt ist nicht verfügbar
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AP3512EMTR-G1 AP3512E.pdf
AP3512EMTR-G1
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJUSTABLE 2A 8SOIC
Produkt ist nicht verfügbar
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DMN53D0LDW-13 DMN53D0LDW.pdf
DMN53D0LDW-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.36A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.09 EUR
20000+0.08 EUR
30000+0.08 EUR
50000+0.07 EUR
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DMN53D0LDW-13 DMN53D0LDW.pdf
DMN53D0LDW-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.36A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 83685 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
59+0.30 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
5000+0.10 EUR
Mindestbestellmenge: 35
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DDZ13ASF-7 ds31987.pdf
DDZ13ASF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 12.43V 500MW SOD323F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12.43 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 11.5 V
auf Bestellung 246000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.04 EUR
6000+0.04 EUR
9000+0.03 EUR
Mindestbestellmenge: 3000
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DDZ13ASF-7 ds31987.pdf
DDZ13ASF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 12.43V 500MW SOD323F
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12.43 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 11.5 V
auf Bestellung 249940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
129+0.14 EUR
269+0.07 EUR
1000+0.06 EUR
Mindestbestellmenge: 91
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BZX84C47-7-F ds30370.pdf
BZX84C47-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 47V 300MW SOT23-3
Produkt ist nicht verfügbar
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BZX84C47-7-F ds30370.pdf
BZX84C47-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 47V 300MW SOT23-3
auf Bestellung 2618 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
71+0.25 EUR
130+0.14 EUR
500+0.08 EUR
1000+0.06 EUR
Mindestbestellmenge: 67
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