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DCX143ZU-13R-F DCX143ZU-13R-F Diodes Incorporated DCX_XXXX_U.pdf Description: PREBIAS TRANSISTOR SOT363 T&R 10
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DMG3415UQ-7 DMG3415UQ-7 Diodes Incorporated DMG3415UQ_Rev1-3_Feb2022.pdf Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.5mOhm @ 4A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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BAV99Q-13-F BAV99Q-13-F Diodes Incorporated BAV99.pdf Description: DIODE ARRAY GP 75V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
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ZTX651QSTZ ZTX651QSTZ Diodes Incorporated ZTX651.pdf Description: TRANS NPN 60V 2A E-LINE
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 175MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Packaging: Tape & Box (TB)
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BSS84Q-13-F BSS84Q-13-F Diodes Incorporated BSS84Q.pdf Description: BSS FAMILY SOT23 T&R 10K
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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GBP206 GBP206 Diodes Incorporated GBP206-GBP210.pdf Description: BRIDGE RECT 1PHASE 600V 2A GBP
Packaging: Tube
Package / Case: 4-SIP, GBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBP
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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ZHCS500QTA ZHCS500QTA Diodes Incorporated ZHCS500.pdf Description: DIODE SCHOTTKY 40V 1A SOT233
Operating Temperature - Junction: 125°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 25V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 40 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
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ZHCS350QTA ZHCS350QTA Diodes Incorporated ZHCS350Q.pdf Description: DIODE SCHOTT 40V 510MA SOD523 3K
Current - Reverse Leakage @ Vr: 12 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 350 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C
Supplier Device Package: SOD-523
Qualification: AEC-Q101
Grade: Automotive
Current - Average Rectified (Io): 510mA
Capacitance @ Vr, F: 6pF @ 25V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1.6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
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BZX84C6V8Q-7-F BZX84C6V8Q-7-F Diodes Incorporated ds18001.pdf Description: DIODE ZENER 6.8V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Grade: Automotive
Qualification: AEC-Q101
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BZX84C6V8S-7-F BZX84C6V8S-7-F Diodes Incorporated ds30108.pdf Description: DIODE ZENER ARRAY 6.8V SOT363
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 200 mW
Part Status: Active
Supplier Device Package: SOT-363
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 Independent
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
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BZX84C6V8-7-F-31 BZX84C6V8-7-F-31 Diodes Incorporated Description: DIODE ZENER 6.8V 300MW SOT23
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
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B340AQ-13-F B340AQ-13-F Diodes Incorporated B320AQ-B360AQ.pdf Description: DIODE SCHOTTKY 40V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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B340AX-13 B340AX-13 Diodes Incorporated B340AX.pdf Description: DIODE SCHOTTKY 40V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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B340AXF-13 B340AXF-13 Diodes Incorporated B340AXF.pdf Description: DIODE SCHOTTKY 40V 3A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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B340AXS-13 B340AXS-13 Diodes Incorporated B340AXS.pdf Description: DIODE SCHOTTKY 40V 3A SMAFS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 285pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA-FS
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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BZX84B3V3Q-7-F BZX84B3V3Q-7-F Diodes Incorporated BZX84Bxxx.pdf Description: DIODE ZENER 3.3V 300MW SOT23
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
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AP7383-50WW-7 AP7383-50WW-7 Diodes Incorporated AP7383.pdf Description: IC REG LINEAR 5V 150MA SOT-25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 3 µA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Voltage Dropout (Max): 1.1V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 3 µA
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AP7383-50FDC-7 Diodes Incorporated AP7383.pdf Description: IC REG LIN 5V 150MA U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 3 µA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6 (Type C)
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Voltage Dropout (Max): 1.1V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 3 µA
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AP7335-33SNG-7 AP7335-33SNG-7 Diodes Incorporated AP7335.pdf Description: IC REG LIN 3.3V 300MA 6DFN2020
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 300mA
PSRR: 65dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: U-DFN2020-6
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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AP7335-33SNG-7 AP7335-33SNG-7 Diodes Incorporated AP7335.pdf Description: IC REG LIN 3.3V 300MA 6DFN2020
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 300mA
PSRR: 65dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: U-DFN2020-6
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
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GC0800044 GC0800044 Diodes Incorporated GC0800044_A.pdf Description: CRYSTAL 8.0000MHZ 16PF SMD
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GC0800044 GC0800044 Diodes Incorporated GC0800044_A.pdf Description: CRYSTAL 8.0000MHZ 16PF SMD
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FY0800027 FY0800027 Diodes Incorporated FY0800027_VerA.pdf Description: CRYSTAL 8.0000MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.043" (1.10mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 8 MHz
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FY0800027 FY0800027 Diodes Incorporated FY0800027_VerA.pdf Description: CRYSTAL 8.0000MHZ 18PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.043" (1.10mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 8 MHz
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HX21A0007Z HX21A0007Z Diodes Incorporated HX21A0007Z_Ver.A.pdf Description: CRYSTAL OSCILLATOR SEAM2520 T&R
Base Resonator: Crystal
Frequency: 100 MHz
Height - Seated (Max): 0.039" (1.00mm)
Current - Supply (Max): 40mA
Voltage - Supply: 3.3V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 105°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVCMOS
Mounting Type: Surface Mount
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
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HX21A0007Z HX21A0007Z Diodes Incorporated HX21A0007Z_Ver.A.pdf Description: CRYSTAL OSCILLATOR SEAM2520 T&R
Current - Supply (Max): 40mA
Voltage - Supply: 3.3V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 105°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVCMOS
Mounting Type: Surface Mount
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Base Resonator: Crystal
Frequency: 100 MHz
Height - Seated (Max): 0.039" (1.00mm)
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BAS70-05-7-F-79 Diodes Incorporated Description: DIODE ARR SCHOT 70V 70MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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DMP3021SSS-13 DMP3021SSS-13 Diodes Incorporated DMP3021SSS.pdf Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2
Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 39A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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DMP3021SSS-13 DMP3021SSS-13 Diodes Incorporated DMP3021SSS.pdf Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 39A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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BC846BQ-13-F BC846BQ-13-F Diodes Incorporated ds11108.pdf Description: TRANS NPN 65V 0.1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 310 mW
Qualification: AEC-Q101
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PI6CB33202ZDIEX-13R PI6CB33202ZDIEX-13R Diodes Incorporated PI6CB33202.pdf Description: IC CLK BUF 1:2 133.46MHZ 24TQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Clock Buffer
Input: CMOS, HCSL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 24-TQFN (4x4)
Part Status: Active
Frequency - Max: 133.46 MHz
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BAT54CWQ-7-F BAT54CWQ-7-F Diodes Incorporated SWQ.pdf Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
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DMP3056LSSQ-13 DMP3056LSSQ-13 Diodes Incorporated DMP3056LSSQ.pdf Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
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DMP2110U-7 DMP2110U-7 Diodes Incorporated DMP2110U.pdf Description: MOSFET P-CH 20V 3.5A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
FET Type: P-Channel
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DMP2110U-7 DMP2110U-7 Diodes Incorporated DMP2110U.pdf Description: MOSFET P-CH 20V 3.5A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 20 V
Package / Case: TO-236-3, SC-59, SOT-23-3
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DMP2110UFDBQ-7 DMP2110UFDBQ-7 Diodes Incorporated DMP2110UFDBQ.pdf Description: MOSFET BVDSS: 8V~24V U-DFN2020-6
Qualification: AEC-Q101
Grade: Automotive
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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DMP2110UFDBQ-7 DMP2110UFDBQ-7 Diodes Incorporated DMP2110UFDBQ.pdf Description: MOSFET BVDSS: 8V~24V U-DFN2020-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
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DMP2110UW-13 DMP2110UW-13 Diodes Incorporated DMP2110UW.pdf Description: MOSFET P-CH 20V 2A SOT323
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 490mW
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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BAS40-04Q-7-F BAS40-04Q-7-F Diodes Incorporated BAS40_-04_-05_-06.pdf Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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BAS40-04Q-13-F BAS40-04Q-13-F Diodes Incorporated BAS40_-04_-05_-06.pdf Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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DMTH4004SCTBQ-13 DMTH4004SCTBQ-13 Diodes Incorporated DMTH4004SCTBQ.pdf Description: MOSFET N-CH 40V 100A TO263AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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DMTH4004SCTBQ-13 DMTH4004SCTBQ-13 Diodes Incorporated DMTH4004SCTBQ.pdf Description: MOSFET N-CH 40V 100A TO263AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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DMTH4004SK3Q-13 DMTH4004SK3Q-13 Diodes Incorporated DMTH4004SK3Q.pdf Description: MOSFET N-CH 40V 100A TO252
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DMNH4004SPS-13 Diodes Incorporated Description: MOSFET BVDSS: 31V-40V POWERDI506
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DMN3060LVT-13 DMN3060LVT-13 Diodes Incorporated DMN3060LVT.pdf Description: MOSFET 2N-CH 30V 3.6A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: TSOT-23-6
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DMN3061SVT-7 Diodes Incorporated Description: MOSFET BVDSS: 25V-30V TSOT26
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DMN3061SVT-13 DMN3061SVT-13 Diodes Incorporated DMN3061SVT.pdf Description: MOSFET 2N-CH 30V 3.4A TSOT26
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 880mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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DMN3060LVT-7 DMN3060LVT-7 Diodes Incorporated Description: MOSFET 2N-CH 30V 3.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: TSOT-26
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DMN3069L-7 Diodes Incorporated DMN3069L.pdf Description: MOSFET BVDSS: 25V~30V SOT23 T&R
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DMN3061SW-13 Diodes Incorporated DMN3061SW.pdf Description: MOSFET BVDSS: 25V~30V SOT323 T&R
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DMN3066L-7 DMN3066L-7 Diodes Incorporated DMN3066L.pdf Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 810mW (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMN3060LW-13 DMN3060LW-13 Diodes Incorporated DMN3060LW.pdf Description: MOSFET BVDSS: 25V~30V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V
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DMN3060LWQ-13 DMN3060LWQ-13 Diodes Incorporated DMN3060LWQ.pdf Description: MOSFET BVDSS: 25V~30V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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DMN3061SWQ-7 Diodes Incorporated DMN3061SWQ.pdf Description: MOSFET BVDSS: 25V~30V SOT323 T&R
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DMN3061LCA3-7 Diodes Incorporated DMN3061LCA3.pdf Description: MOSFET BVDSS: 25V~30V X4-DSN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 58mOhm @ 500mA, 8V
Power Dissipation (Max): 1.12W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: X4-DSN1006-3 (Type C)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 126 pF @ 15 V
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DMN3066LQ-7 DMN3066LQ-7 Diodes Incorporated DMN3066LQ.pdf Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 810mW (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DMN3069L-13 Diodes Incorporated DMN3069L.pdf Description: MOSFET BVDSS: 25V~30V SOT23 T&R
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DMN3060LWQ-7 DMN3060LWQ-7 Diodes Incorporated DMN3060LWQ.pdf Description: MOSFET BVDSS: 25V~30V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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DMN3066LQ-13 DMN3066LQ-13 Diodes Incorporated DMN3066LQ.pdf Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 810mW (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DMN3066L-13 DMN3066L-13 Diodes Incorporated DMN3066L.pdf Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 810mW (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DCX143ZU-13R-F DCX_XXXX_U.pdf
DCX143ZU-13R-F
Hersteller: Diodes Incorporated
Description: PREBIAS TRANSISTOR SOT363 T&R 10
Produkt ist nicht verfügbar
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DMG3415UQ-7 DMG3415UQ_Rev1-3_Feb2022.pdf
DMG3415UQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.5mOhm @ 4A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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BAV99Q-13-F BAV99.pdf
BAV99Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 75V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
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ZTX651QSTZ ZTX651.pdf
ZTX651QSTZ
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 2A E-LINE
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 175MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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BSS84Q-13-F BSS84Q.pdf
BSS84Q-13-F
Hersteller: Diodes Incorporated
Description: BSS FAMILY SOT23 T&R 10K
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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GBP206 GBP206-GBP210.pdf
GBP206
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 600V 2A GBP
Packaging: Tube
Package / Case: 4-SIP, GBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBP
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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ZHCS500QTA ZHCS500.pdf
ZHCS500QTA
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1A SOT233
Operating Temperature - Junction: 125°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 25V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 40 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
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ZHCS350QTA ZHCS350Q.pdf
ZHCS350QTA
Hersteller: Diodes Incorporated
Description: DIODE SCHOTT 40V 510MA SOD523 3K
Current - Reverse Leakage @ Vr: 12 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 350 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C
Supplier Device Package: SOD-523
Qualification: AEC-Q101
Grade: Automotive
Current - Average Rectified (Io): 510mA
Capacitance @ Vr, F: 6pF @ 25V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1.6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
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BZX84C6V8Q-7-F ds18001.pdf
BZX84C6V8Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.8V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Grade: Automotive
Qualification: AEC-Q101
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BZX84C6V8S-7-F ds30108.pdf
BZX84C6V8S-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER ARRAY 6.8V SOT363
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 200 mW
Part Status: Active
Supplier Device Package: SOT-363
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 Independent
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
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BZX84C6V8-7-F-31
BZX84C6V8-7-F-31
Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.8V 300MW SOT23
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
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B340AQ-13-F B320AQ-B360AQ.pdf
B340AQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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B340AX-13 B340AX.pdf
B340AX-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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5000+0.13 EUR
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B340AXF-13 B340AXF.pdf
B340AXF-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Produkt ist nicht verfügbar
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B340AXS-13 B340AXS.pdf
B340AXS-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A SMAFS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 285pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA-FS
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Produkt ist nicht verfügbar
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BZX84B3V3Q-7-F BZX84Bxxx.pdf
BZX84B3V3Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.3V 300MW SOT23
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AP7383-50WW-7 AP7383.pdf
AP7383-50WW-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 5V 150MA SOT-25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 3 µA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Voltage Dropout (Max): 1.1V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 3 µA
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AP7383-50FDC-7 AP7383.pdf
Hersteller: Diodes Incorporated
Description: IC REG LIN 5V 150MA U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 3 µA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6 (Type C)
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Voltage Dropout (Max): 1.1V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 3 µA
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3000+0.2 EUR
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AP7335-33SNG-7 AP7335.pdf
AP7335-33SNG-7
Hersteller: Diodes Incorporated
Description: IC REG LIN 3.3V 300MA 6DFN2020
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 300mA
PSRR: 65dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: U-DFN2020-6
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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AP7335-33SNG-7 AP7335.pdf
AP7335-33SNG-7
Hersteller: Diodes Incorporated
Description: IC REG LIN 3.3V 300MA 6DFN2020
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 300mA
PSRR: 65dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: U-DFN2020-6
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
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GC0800044 GC0800044_A.pdf
GC0800044
Hersteller: Diodes Incorporated
Description: CRYSTAL 8.0000MHZ 16PF SMD
Produkt ist nicht verfügbar
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GC0800044 GC0800044_A.pdf
GC0800044
Hersteller: Diodes Incorporated
Description: CRYSTAL 8.0000MHZ 16PF SMD
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FY0800027 FY0800027_VerA.pdf
FY0800027
Hersteller: Diodes Incorporated
Description: CRYSTAL 8.0000MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.043" (1.10mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 8 MHz
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FY0800027 FY0800027_VerA.pdf
FY0800027
Hersteller: Diodes Incorporated
Description: CRYSTAL 8.0000MHZ 18PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.043" (1.10mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 8 MHz
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HX21A0007Z HX21A0007Z_Ver.A.pdf
HX21A0007Z
Hersteller: Diodes Incorporated
Description: CRYSTAL OSCILLATOR SEAM2520 T&R
Base Resonator: Crystal
Frequency: 100 MHz
Height - Seated (Max): 0.039" (1.00mm)
Current - Supply (Max): 40mA
Voltage - Supply: 3.3V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 105°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVCMOS
Mounting Type: Surface Mount
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HX21A0007Z HX21A0007Z_Ver.A.pdf
HX21A0007Z
Hersteller: Diodes Incorporated
Description: CRYSTAL OSCILLATOR SEAM2520 T&R
Current - Supply (Max): 40mA
Voltage - Supply: 3.3V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 105°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVCMOS
Mounting Type: Surface Mount
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Base Resonator: Crystal
Frequency: 100 MHz
Height - Seated (Max): 0.039" (1.00mm)
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BAS70-05-7-F-79
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 70V 70MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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DMP3021SSS-13 DMP3021SSS.pdf
DMP3021SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2
Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 39A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMP3021SSS-13 DMP3021SSS.pdf
DMP3021SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 39A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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11+1.99 EUR
16+1.37 EUR
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BC846BQ-13-F ds11108.pdf
BC846BQ-13-F
Hersteller: Diodes Incorporated
Description: TRANS NPN 65V 0.1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 310 mW
Qualification: AEC-Q101
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10000+0.083 EUR
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PI6CB33202ZDIEX-13R PI6CB33202.pdf
PI6CB33202ZDIEX-13R
Hersteller: Diodes Incorporated
Description: IC CLK BUF 1:2 133.46MHZ 24TQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Clock Buffer
Input: CMOS, HCSL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 24-TQFN (4x4)
Part Status: Active
Frequency - Max: 133.46 MHz
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3500+3 EUR
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BAT54CWQ-7-F SWQ.pdf
BAT54CWQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMP3056LSSQ-13 DMP3056LSSQ.pdf
DMP3056LSSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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DMP2110U-7 DMP2110U.pdf
DMP2110U-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.5A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
FET Type: P-Channel
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3000+0.15 EUR
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DMP2110U-7 DMP2110U.pdf
DMP2110U-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.5A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 20 V
Package / Case: TO-236-3, SC-59, SOT-23-3
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DMP2110UFDBQ-7 DMP2110UFDBQ.pdf
DMP2110UFDBQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V U-DFN2020-6
Qualification: AEC-Q101
Grade: Automotive
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMP2110UFDBQ-7 DMP2110UFDBQ.pdf
DMP2110UFDBQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V U-DFN2020-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2113 Stücke:
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17+1.26 EUR
28+0.76 EUR
100+0.49 EUR
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DMP2110UW-13 DMP2110UW.pdf
DMP2110UW-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 2A SOT323
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 490mW
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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10000+0.13 EUR
20000+0.12 EUR
30000+0.12 EUR
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BAS40-04Q-7-F BAS40_-04_-05_-06.pdf
BAS40-04Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS40-04Q-13-F BAS40_-04_-05_-06.pdf
BAS40-04Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH4004SCTBQ-13 DMTH4004SCTBQ.pdf
DMTH4004SCTBQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO263AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMTH4004SCTBQ-13 DMTH4004SCTBQ.pdf
DMTH4004SCTBQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO263AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 712 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.3 EUR
10+2.88 EUR
100+1.99 EUR
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DMTH4004SK3Q-13 DMTH4004SK3Q.pdf
DMTH4004SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO252
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.63 EUR
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DMNH4004SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V-40V POWERDI506
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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DMN3060LVT-13 DMN3060LVT.pdf
DMN3060LVT-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 3.6A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: TSOT-23-6
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.2 EUR
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DMN3061SVT-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V-30V TSOT26
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DMN3061SVT-13 DMN3061SVT.pdf
DMN3061SVT-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 3.4A TSOT26
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 880mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMN3060LVT-7
DMN3060LVT-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 3.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: TSOT-26
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.24 EUR
6000+0.23 EUR
9000+0.21 EUR
15000+0.2 EUR
Mindestbestellmenge: 3000 Stücke
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DMN3069L-7 DMN3069L.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DMN3061SW-13 DMN3061SW.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT323 T&R
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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DMN3066L-7 DMN3066L.pdf
DMN3066L-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 810mW (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DMN3060LW-13 DMN3060LW.pdf
DMN3060LW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.11 EUR
20000+0.1 EUR
30000+0.095 EUR
Mindestbestellmenge: 10000 Stücke
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DMN3060LWQ-13 DMN3060LWQ.pdf
DMN3060LWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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DMN3061SWQ-7 DMN3061SWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT323 T&R
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DMN3061LCA3-7 DMN3061LCA3.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X4-DSN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 58mOhm @ 500mA, 8V
Power Dissipation (Max): 1.12W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: X4-DSN1006-3 (Type C)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 126 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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DMN3066LQ-7 DMN3066LQ.pdf
DMN3066LQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 810mW (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DMN3069L-13 DMN3069L.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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DMN3060LWQ-7 DMN3060LWQ.pdf
DMN3060LWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.14 EUR
6000+0.13 EUR
9000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN3066LQ-13 DMN3066LQ.pdf
DMN3066LQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 810mW (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN3066L-13 DMN3066L.pdf
DMN3066L-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 810mW (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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