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FL2500333 FL2500333 Diodes Incorporated FL.pdf Description: CRYSTAL 25.0000MHZ 18PF SMD
Supplier Device Package: 4-SMD (3.2x2.5)
Frequency: 25 MHz
ESR (Equivalent Series Resistance): 30 Ohms
Height - Seated (Max): 0.031" (0.78mm)
Operating Mode: Fundamental
Frequency Tolerance: ±20ppm
Frequency Stability: ±20ppm
Operating Temperature: -40°C ~ 85°C
Type: MHz Crystal
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Load Capacitance: 18pF
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FL2500333 FL2500333 Diodes Incorporated FL.pdf Description: CRYSTAL 25.0000MHZ 18PF SMD
Supplier Device Package: 4-SMD (3.2x2.5)
Frequency: 25 MHz
ESR (Equivalent Series Resistance): 30 Ohms
Height - Seated (Max): 0.031" (0.78mm)
Operating Mode: Fundamental
Frequency Tolerance: ±20ppm
Frequency Stability: ±20ppm
Operating Temperature: -40°C ~ 85°C
Type: MHz Crystal
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Load Capacitance: 18pF
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
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21+0.84 EUR
24+0.75 EUR
25+0.71 EUR
50+0.68 EUR
100+0.65 EUR
250+0.61 EUR
500+0.59 EUR
1000+0.56 EUR
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BZX84C13Q-13-F BZX84C13Q-13-F Diodes Incorporated ds18001.pdf Description: DIODE ZENER 13V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±6.54%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
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BAS21Q-7-F BAS21Q-7-F Diodes Incorporated Ds12004.pdf Description: DIODE STANDARD 200V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
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3000+0.064 EUR
6000+0.058 EUR
9000+0.054 EUR
15000+0.05 EUR
21000+0.048 EUR
30000+0.045 EUR
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BAS21Q-7-F BAS21Q-7-F Diodes Incorporated Ds12004.pdf Description: DIODE STANDARD 200V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
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90+0.2 EUR
145+0.12 EUR
500+0.089 EUR
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MMSZ5255BQ-7-F MMSZ5255BQ-7-F Diodes Incorporated Description: DIODE ZENER 28V 370MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
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59+0.3 EUR
111+0.16 EUR
500+0.1 EUR
1000+0.071 EUR
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BAV3004WQ-7-F BAV3004WQ-7-F Diodes Incorporated BAV3004WQ.pdf Description: DIODE STANDARD 300V 225MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Current - Average Rectified (Io): 225mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ZXBM2003X10TC ZXBM2003X10TC Diodes Incorporated ZXBM2001%2C2%2C3.pdf Description: IC MOTOR DRIVER 4.5V-18V 10MSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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BZT52C11SQ-7-F BZT52C11SQ-7-F Diodes Incorporated ds30093.pdf Description: DIODE ZENER 11V 200MW SOD323
Tolerance: ±5.45%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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3000+0.062 EUR
6000+0.055 EUR
9000+0.052 EUR
15000+0.048 EUR
21000+0.045 EUR
30000+0.043 EUR
75000+0.038 EUR
150000+0.035 EUR
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BZT52C11Q-7-F BZT52C11Q-7-F Diodes Incorporated ds18004.pdf Description: DIODE ZENER 11V 370MW SOD123
Tolerance: ±5.45%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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3000+0.035 EUR
6000+0.031 EUR
9000+0.027 EUR
15000+0.025 EUR
21000+0.023 EUR
30000+0.022 EUR
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BZX84C4V7Q-13-F BZX84C4V7Q-13-F Diodes Incorporated ds18001.pdf Description: DIODE ZENER 4.7V 300MW SOT23
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±6.38%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMSZ5248BQ-13-F MMSZ5248BQ-13-F Diodes Incorporated ds18010.pdf Description: DIODE ZENER 18V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
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10000+0.031 EUR
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50000+0.027 EUR
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MMSZ5248BQ-7-F MMSZ5248BQ-7-F Diodes Incorporated ds18010.pdf Description: DIODE ZENER 18V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
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3000+0.048 EUR
6000+0.037 EUR
9000+0.031 EUR
15000+0.029 EUR
21000+0.027 EUR
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PI5A392AQE PI5A392AQE Diodes Incorporated PI5A392A.pdf Description: IC SWITCH SPST-NOX4 18OHM 16QSOP
Packaging: Tube
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 18Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-QSOP
Voltage - Supply, Single (V+): 2V ~ 6V
Charge Injection: 5pC
Crosstalk: -72dB @ 30MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 20ns, 10ns
Channel Capacitance (CS(off), CD(off)): 13pF
Current - Leakage (IS(off)) (Max): 30nA
Number of Circuits: 4
Produkt ist nicht verfügbar
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BABS260 BABS260 Diodes Incorporated BABS260.pdf Description: BRIDGE RECT 1PHASE 60V 2A ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Schottky
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 60 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 2 A
Current - Reverse Leakage @ Vr: 20 µA @ 60 V
Produkt ist nicht verfügbar
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ZTL431BQFTA ZTL431BQFTA Diodes Incorporated ZTL431AQ_ZTL431BQ_ZTL432AQ_ZTL432BQ.pdf Description: IC VREF SHUNT 2.5V SOT23-3
Tolerance: ±0.5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
Part Status: Active
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 20 V
Qualification: AEC-Q100
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3000+0.37 EUR
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BSS138WQ-13-F BSS138WQ-13-F Diodes Incorporated BSS138WQ.pdf Description: BSS FAMILY SOT323 T&R 10K
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS138WQ-7-F BSS138WQ-7-F Diodes Incorporated BSS138WQ.pdf Description: BSS FAMILY SOT323 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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HBDM60V600X-7 HBDM60V600X-7 Diodes Incorporated HBDM60V600X.pdf Description: TRANS NPN/PNP 60V/80V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C
Power - Max: 200mW
Current - Collector (Ic) (Max): 600mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 60V, 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA, 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 1V / 100 @ 150mA, 10V
Supplier Device Package: SOT-363
Part Status: Active
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3000+0.22 EUR
6000+0.2 EUR
9000+0.19 EUR
15000+0.18 EUR
21000+0.17 EUR
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DMN2058U-13 DMN2058U-13 Diodes Incorporated DMN2058U.pdf Description: MOSFET N-CH 20V 4.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Power Dissipation (Max): 1.13W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 10 V
Produkt ist nicht verfügbar
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DMN2058U-13 DMN2058U-13 Diodes Incorporated DMN2058U.pdf Description: MOSFET N-CH 20V 4.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Power Dissipation (Max): 1.13W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 10 V
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500+0.18 EUR
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PI6C48535-01BLIEX PI6C48535-01BLIEX Diodes Incorporated PI6C48535-01B.pdf Description: IC CLK BUFFER 2:4 500MHZ 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution), Multiplexer
Input: LVCMOS, LVPECL, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 2:4
Differential - Input:Output: No/Yes
Supplier Device Package: 20-TSSOP
Part Status: Active
Frequency - Max: 500 MHz
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3000+1.56 EUR
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PI6C48535-01BLIEX PI6C48535-01BLIEX Diodes Incorporated PI6C48535-01B.pdf Description: IC CLK BUFFER 2:4 500MHZ 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution), Multiplexer
Input: LVCMOS, LVPECL, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 2:4
Differential - Input:Output: No/Yes
Supplier Device Package: 20-TSSOP
Part Status: Active
Frequency - Max: 500 MHz
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6+3.1 EUR
10+2.28 EUR
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100+1.85 EUR
250+1.75 EUR
500+1.68 EUR
1000+1.67 EUR
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STPR1020 STPR1020 Diodes Incorporated STPR1020.pdf Description: DIODE ARRAY GP 200V 5A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO220AB (Type WX)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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15+1.2 EUR
50+0.44 EUR
100+0.41 EUR
500+0.39 EUR
2000+0.36 EUR
5000+0.33 EUR
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STPR1640 STPR1640 Diodes Incorporated STPR1640.pdf Description: FRED GPP RECTIFIER TO220AB TUBE
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO220AB (Type WX)
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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14+1.33 EUR
100+1.02 EUR
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STPR1240 STPR1240 Diodes Incorporated STPR1240.pdf Description: DIODE ARRAY GP 400V 6A TO220AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO220AB (Type WX)
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STPR1040 STPR1040 Diodes Incorporated STPR1040.pdf Description: DIODE ARRAY GP 400V 5A TO220AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO220AB (Type WX)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STPR2040 STPR2040 Diodes Incorporated STPR2040.pdf Description: DIODE ARRAY GP 400V 10A TO220AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO220AB (Type WX)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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DDTC144ELP-7 DDTC144ELP-7 Diodes Incorporated ds31245.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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DDTC144ELP-7 DDTC144ELP-7 Diodes Incorporated ds31245.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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DDTC143TCAQ-7-F DDTC143TCAQ-7-F Diodes Incorporated DDTC_R1-ONLY_SERIES_CA.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 Only
Qualification: AEC-Q101
Grade: Automotive
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DDTC143TCAQ-13-F DDTC143TCAQ-13-F Diodes Incorporated DDTC_R1-ONLY_SERIES_CA.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 Only
Qualification: AEC-Q101
Grade: Automotive
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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ADTC143TCAQ-7 ADTC143TCAQ-7 Diodes Incorporated ADTC143TCAQ.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 Only
Qualification: AEC-Q101
Grade: Automotive
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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BZX84C24Q-7-F BZX84C24Q-7-F Diodes Incorporated ds18001.pdf Description: DIODE ZENER 24V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5.83%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Qualification: AEC-Q101
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DMG2302UQ-13 DMG2302UQ-13 Diodes Incorporated DMG2302UQ.pdf Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 50µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V
Qualification: AEC-Q101
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DMG2302UQ-13 DMG2302UQ-13 Diodes Incorporated DMG2302UQ.pdf Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 50µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V
Qualification: AEC-Q101
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DMG2302UQ-7 DMG2302UQ-7 Diodes Incorporated DMG2302UQ.pdf Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 50µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V
Qualification: AEC-Q101
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DMG2302UQ-7 DMG2302UQ-7 Diodes Incorporated DMG2302UQ.pdf Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 50µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V
Qualification: AEC-Q101
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AS358AMTR-E1 AS358AMTR-E1 Diodes Incorporated AS358-358A-358B.pdf Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SOIC
Voltage - Input Offset: 2 mV
Current - Input Bias: 20 nA
Current - Supply: 700µA (x2 Channels)
Operating Temperature: -40°C ~ 85°C (TA)
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AS358AMTR-E1 AS358AMTR-E1 Diodes Incorporated AS358-358A-358B.pdf Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SOIC
Voltage - Input Offset: 2 mV
Current - Input Bias: 20 nA
Current - Supply: 700µA (x2 Channels)
Operating Temperature: -40°C ~ 85°C (TA)
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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DMP2110UQ-13 DMP2110UQ-13 Diodes Incorporated DMP2110UQ.pdf Description: MOSFET BVDSS: 8V~24V SOT23 T&R 1
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DMP2110UQ-7 DMP2110UQ-7 Diodes Incorporated DMP2110UQ.pdf Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DMP2069UFY4Q-7 DMP2069UFY4Q-7 Diodes Incorporated DMP2069UFY4Q.pdf Description: MOSFET BVDSS: 8V~24V X2-DFN2015-
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Grade: Automotive
Supplier Device Package: X2-DFN2015-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 530mW
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN
Packaging: Tape & Reel (TR)
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DMN62D1LFD-13 DMN62D1LFD-13 Diodes Incorporated DMN62D1LFD.pdf Description: MOSFET N-CH 60V 400MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1212-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
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DMN62D1LFD-13 DMN62D1LFD-13 Diodes Incorporated DMN62D1LFD.pdf Description: MOSFET N-CH 60V 400MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1212-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
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DMN6069SE-13 DMN6069SE-13 Diodes Incorporated DMN6069SE.pdf Description: MOSFET N-CH 60V 4.3A/10A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 10A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 3A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V
Qualification: AEC-Q101
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DMN6069SE-13 DMN6069SE-13 Diodes Incorporated DMN6069SE.pdf Description: MOSFET N-CH 60V 4.3A/10A SOT223
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.2W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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DMN6075S-13 DMN6075S-13 Diodes Incorporated DMN6075S.pdf Description: MOSFET N-CH 60V 2A SOT23
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
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DMN6075S-13 DMN6075S-13 Diodes Incorporated DMN6075S.pdf Description: MOSFET N-CH 60V 2A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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DMN6140LQ-13 DMN6140LQ-13 Diodes Incorporated DMN6140LQ.pdf Description: MOSFET N-CH 60V 1.6A SOT23
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DMN6140LQ-13 DMN6140LQ-13 Diodes Incorporated DMN6140LQ.pdf Description: MOSFET N-CH 60V 1.6A SOT23
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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KX71327001 Diodes Incorporated Description: XTAL OSC XO 32.7680KHZ CMOS
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SBR30A60CT SBR30A60CT Diodes Incorporated SBR30A60.pdf Description: DIODE ARRAY SBR 60V 15A TO-220-3
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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GC2860013 GC2860013 Diodes Incorporated GC2860013.pdf Description: CRYSTAL 28.63636MHZ 16PF
Frequency: 28.63636 MHz
ESR (Equivalent Series Resistance): 40 Ohms
Operating Mode: Fundamental
Frequency Tolerance: ±30ppm
Frequency Stability: ±30ppm
Operating Temperature: -20°C ~ 70°C
Type: MHz Crystal
Load Capacitance: 16pF
Packaging: Tape & Reel (TR)
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GC2860011 GC2860011 Diodes Incorporated GC2860011.pdf Description: CRYSTAL 28.6363MHZ 18PF
Frequency: 28.6363 MHz
ESR (Equivalent Series Resistance): 30 Ohms
Operating Mode: Fundamental
Frequency Tolerance: ±30ppm
Frequency Stability: ±50ppm
Operating Temperature: -40°C ~ 85°C
Type: MHz Crystal
Load Capacitance: 18pF
Packaging: Tape & Reel (TR)
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STPR1020CTW STPR1020CTW Diodes Incorporated STPR1020CTW.pdf Description: DIODE ARRAY GP 200V 10A TO-220AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BAV20WQ-7-F BAV20WQ-7-F Diodes Incorporated BAV19W-BAV21W.pdf Description: DIODE STANDARD 150V 400MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 400mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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PI3EQX12802ZHE PI3EQX12802ZHE Diodes Incorporated Description: 12G SAS3 2 PORT 4 CHANNELREDRIVE
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PI3EQX12802ZHEX PI3EQX12802ZHEX Diodes Incorporated Description: 12G SAS3 2 PORT 4 CHANNELREDRIVE
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BZT52C3V9Q-7-F BZT52C3V9Q-7-F Diodes Incorporated ds18004.pdf Description: DIODE ZENER 3.9V 370MW SOD123
Tolerance: ±5.13%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
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FL2500333 FL.pdf
FL2500333
Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 18PF SMD
Supplier Device Package: 4-SMD (3.2x2.5)
Frequency: 25 MHz
ESR (Equivalent Series Resistance): 30 Ohms
Height - Seated (Max): 0.031" (0.78mm)
Operating Mode: Fundamental
Frequency Tolerance: ±20ppm
Frequency Stability: ±20ppm
Operating Temperature: -40°C ~ 85°C
Type: MHz Crystal
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Load Capacitance: 18pF
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FL2500333 FL.pdf
FL2500333
Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 18PF SMD
Supplier Device Package: 4-SMD (3.2x2.5)
Frequency: 25 MHz
ESR (Equivalent Series Resistance): 30 Ohms
Height - Seated (Max): 0.031" (0.78mm)
Operating Mode: Fundamental
Frequency Tolerance: ±20ppm
Frequency Stability: ±20ppm
Operating Temperature: -40°C ~ 85°C
Type: MHz Crystal
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Load Capacitance: 18pF
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
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21+0.84 EUR
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25+0.71 EUR
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BZX84C13Q-13-F ds18001.pdf
BZX84C13Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 13V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±6.54%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS21Q-7-F Ds12004.pdf
BAS21Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 200V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
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3000+0.064 EUR
6000+0.058 EUR
9000+0.054 EUR
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BAS21Q-7-F Ds12004.pdf
BAS21Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 200V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
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53+0.33 EUR
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MMSZ5255BQ-7-F
MMSZ5255BQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 28V 370MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
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48+0.37 EUR
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BAV3004WQ-7-F BAV3004WQ.pdf
BAV3004WQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 300V 225MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Current - Average Rectified (Io): 225mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ZXBM2003X10TC ZXBM2001%2C2%2C3.pdf
ZXBM2003X10TC
Hersteller: Diodes Incorporated
Description: IC MOTOR DRIVER 4.5V-18V 10MSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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BZT52C11SQ-7-F ds30093.pdf
BZT52C11SQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 11V 200MW SOD323
Tolerance: ±5.45%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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3000+0.062 EUR
6000+0.055 EUR
9000+0.052 EUR
15000+0.048 EUR
21000+0.045 EUR
30000+0.043 EUR
75000+0.038 EUR
150000+0.035 EUR
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BZT52C11Q-7-F ds18004.pdf
BZT52C11Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 11V 370MW SOD123
Tolerance: ±5.45%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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AnzahlPreis
3000+0.035 EUR
6000+0.031 EUR
9000+0.027 EUR
15000+0.025 EUR
21000+0.023 EUR
30000+0.022 EUR
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BZX84C4V7Q-13-F ds18001.pdf
BZX84C4V7Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 4.7V 300MW SOT23
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±6.38%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMSZ5248BQ-13-F ds18010.pdf
MMSZ5248BQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 18V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
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10000+0.031 EUR
30000+0.028 EUR
50000+0.027 EUR
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MMSZ5248BQ-7-F ds18010.pdf
MMSZ5248BQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 18V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
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3000+0.048 EUR
6000+0.037 EUR
9000+0.031 EUR
15000+0.029 EUR
21000+0.027 EUR
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PI5A392AQE PI5A392A.pdf
PI5A392AQE
Hersteller: Diodes Incorporated
Description: IC SWITCH SPST-NOX4 18OHM 16QSOP
Packaging: Tube
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 18Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-QSOP
Voltage - Supply, Single (V+): 2V ~ 6V
Charge Injection: 5pC
Crosstalk: -72dB @ 30MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 20ns, 10ns
Channel Capacitance (CS(off), CD(off)): 13pF
Current - Leakage (IS(off)) (Max): 30nA
Number of Circuits: 4
Produkt ist nicht verfügbar
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BABS260 BABS260.pdf
BABS260
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 60V 2A ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Schottky
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 60 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 2 A
Current - Reverse Leakage @ Vr: 20 µA @ 60 V
Produkt ist nicht verfügbar
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ZTL431BQFTA ZTL431AQ_ZTL431BQ_ZTL432AQ_ZTL432BQ.pdf
ZTL431BQFTA
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 2.5V SOT23-3
Tolerance: ±0.5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
Part Status: Active
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 20 V
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
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AnzahlPreis
3000+0.37 EUR
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BSS138WQ-13-F BSS138WQ.pdf
BSS138WQ-13-F
Hersteller: Diodes Incorporated
Description: BSS FAMILY SOT323 T&R 10K
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS138WQ-7-F BSS138WQ.pdf
BSS138WQ-7-F
Hersteller: Diodes Incorporated
Description: BSS FAMILY SOT323 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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HBDM60V600X-7 HBDM60V600X.pdf
HBDM60V600X-7
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 60V/80V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C
Power - Max: 200mW
Current - Collector (Ic) (Max): 600mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 60V, 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA, 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 1V / 100 @ 150mA, 10V
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.22 EUR
6000+0.2 EUR
9000+0.19 EUR
15000+0.18 EUR
21000+0.17 EUR
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DMN2058U-13 DMN2058U.pdf
DMN2058U-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 4.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Power Dissipation (Max): 1.13W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 10 V
Produkt ist nicht verfügbar
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DMN2058U-13 DMN2058U.pdf
DMN2058U-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 4.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Power Dissipation (Max): 1.13W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 10 V
auf Bestellung 1396 Stücke:
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AnzahlPreis
28+0.63 EUR
46+0.39 EUR
100+0.25 EUR
500+0.18 EUR
1000+0.16 EUR
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PI6C48535-01BLIEX PI6C48535-01B.pdf
PI6C48535-01BLIEX
Hersteller: Diodes Incorporated
Description: IC CLK BUFFER 2:4 500MHZ 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution), Multiplexer
Input: LVCMOS, LVPECL, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 2:4
Differential - Input:Output: No/Yes
Supplier Device Package: 20-TSSOP
Part Status: Active
Frequency - Max: 500 MHz
auf Bestellung 36000 Stücke:
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AnzahlPreis
3000+1.56 EUR
6000+1.53 EUR
9000+1.52 EUR
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PI6C48535-01BLIEX PI6C48535-01B.pdf
PI6C48535-01BLIEX
Hersteller: Diodes Incorporated
Description: IC CLK BUFFER 2:4 500MHZ 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution), Multiplexer
Input: LVCMOS, LVPECL, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 2:4
Differential - Input:Output: No/Yes
Supplier Device Package: 20-TSSOP
Part Status: Active
Frequency - Max: 500 MHz
auf Bestellung 38817 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.1 EUR
10+2.28 EUR
25+2.08 EUR
100+1.85 EUR
250+1.75 EUR
500+1.68 EUR
1000+1.67 EUR
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STPR1020 STPR1020.pdf
STPR1020
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 200V 5A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO220AB (Type WX)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 11850 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
15+1.2 EUR
50+0.44 EUR
100+0.41 EUR
500+0.39 EUR
2000+0.36 EUR
5000+0.33 EUR
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STPR1640 STPR1640.pdf
STPR1640
Hersteller: Diodes Incorporated
Description: FRED GPP RECTIFIER TO220AB TUBE
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO220AB (Type WX)
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1875 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
12+1.51 EUR
14+1.33 EUR
100+1.02 EUR
500+0.81 EUR
1000+0.65 EUR
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STPR1240 STPR1240.pdf
STPR1240
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 400V 6A TO220AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO220AB (Type WX)
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
14+1.3 EUR
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STPR1040 STPR1040.pdf
STPR1040
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 400V 5A TO220AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO220AB (Type WX)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.8 EUR
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STPR2040 STPR2040.pdf
STPR2040
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 400V 10A TO220AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO220AB (Type WX)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
15+1.25 EUR
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DDTC144ELP-7 ds31245.pdf
DDTC144ELP-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DDTC144ELP-7 ds31245.pdf
DDTC144ELP-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 427 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
18+1.02 EUR
28+0.64 EUR
100+0.41 EUR
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DDTC143TCAQ-7-F DDTC_R1-ONLY_SERIES_CA.pdf
DDTC143TCAQ-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 Only
Qualification: AEC-Q101
Grade: Automotive
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DDTC143TCAQ-13-F DDTC_R1-ONLY_SERIES_CA.pdf
DDTC143TCAQ-13-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 Only
Qualification: AEC-Q101
Grade: Automotive
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ADTC143TCAQ-7 ADTC143TCAQ.pdf
ADTC143TCAQ-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 Only
Qualification: AEC-Q101
Grade: Automotive
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 156000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.077 EUR
6000+0.069 EUR
9000+0.065 EUR
15000+0.06 EUR
21000+0.057 EUR
30000+0.055 EUR
75000+0.049 EUR
150000+0.045 EUR
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BZX84C24Q-7-F ds18001.pdf
BZX84C24Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 24V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5.83%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.081 EUR
Mindestbestellmenge: 3000 Stücke
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DMG2302UQ-13 DMG2302UQ.pdf
DMG2302UQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 50µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMG2302UQ-13 DMG2302UQ.pdf
DMG2302UQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 50µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 8722 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
17+1.09 EUR
27+0.67 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.29 EUR
2000+0.26 EUR
5000+0.23 EUR
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DMG2302UQ-7 DMG2302UQ.pdf
DMG2302UQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 50µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMG2302UQ-7 DMG2302UQ.pdf
DMG2302UQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 50µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V
Qualification: AEC-Q101
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AnzahlPreis
17+1.09 EUR
27+0.67 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.29 EUR
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AS358AMTR-E1 AS358-358A-358B.pdf
AS358AMTR-E1
Hersteller: Diodes Incorporated
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SOIC
Voltage - Input Offset: 2 mV
Current - Input Bias: 20 nA
Current - Supply: 700µA (x2 Channels)
Operating Temperature: -40°C ~ 85°C (TA)
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AS358AMTR-E1 AS358-358A-358B.pdf
AS358AMTR-E1
Hersteller: Diodes Incorporated
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SOIC
Voltage - Input Offset: 2 mV
Current - Input Bias: 20 nA
Current - Supply: 700µA (x2 Channels)
Operating Temperature: -40°C ~ 85°C (TA)
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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91+0.19 EUR
129+0.14 EUR
148+0.12 EUR
175+0.1 EUR
250+0.092 EUR
500+0.087 EUR
1000+0.082 EUR
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DMP2110UQ-13 DMP2110UQ.pdf
DMP2110UQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 1
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMP2110UQ-7 DMP2110UQ.pdf
DMP2110UQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 3291000 Stücke:
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3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
30000+0.1 EUR
75000+0.086 EUR
150000+0.085 EUR
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DMP2069UFY4Q-7 DMP2069UFY4Q.pdf
DMP2069UFY4Q-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN2015-
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Grade: Automotive
Supplier Device Package: X2-DFN2015-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 530mW
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN
Packaging: Tape & Reel (TR)
auf Bestellung 33000 Stücke:
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AnzahlPreis
3000+0.22 EUR
6000+0.21 EUR
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DMN62D1LFD-13 DMN62D1LFD.pdf
DMN62D1LFD-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 400MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1212-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
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10000+0.081 EUR
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DMN62D1LFD-13 DMN62D1LFD.pdf
DMN62D1LFD-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 400MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1212-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
auf Bestellung 4219911 Stücke:
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26+0.69 EUR
37+0.48 EUR
100+0.24 EUR
500+0.2 EUR
1000+0.15 EUR
2000+0.12 EUR
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DMN6069SE-13 DMN6069SE.pdf
DMN6069SE-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 4.3A/10A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 10A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 3A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V
Qualification: AEC-Q101
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2500+0.24 EUR
7500+0.23 EUR
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DMN6069SE-13 DMN6069SE.pdf
DMN6069SE-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 4.3A/10A SOT223
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.2W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 228699 Stücke:
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29+0.62 EUR
34+0.53 EUR
100+0.36 EUR
500+0.35 EUR
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DMN6075S-13 DMN6075S.pdf
DMN6075S-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 2A SOT23
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Produkt ist nicht verfügbar
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DMN6075S-13 DMN6075S.pdf
DMN6075S-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 2A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 9519 Stücke:
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AnzahlPreis
30+0.6 EUR
50+0.36 EUR
120+0.15 EUR
500+0.14 EUR
1000+0.13 EUR
2000+0.12 EUR
5000+0.11 EUR
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DMN6140LQ-13 DMN6140LQ.pdf
DMN6140LQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.6A SOT23
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10000+0.16 EUR
20000+0.15 EUR
30000+0.13 EUR
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DMN6140LQ-13 DMN6140LQ.pdf
DMN6140LQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.6A SOT23
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 58980 Stücke:
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22+0.81 EUR
36+0.5 EUR
100+0.25 EUR
500+0.22 EUR
1000+0.18 EUR
2000+0.17 EUR
5000+0.16 EUR
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KX71327001
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 32.7680KHZ CMOS
Produkt ist nicht verfügbar
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SBR30A60CT SBR30A60.pdf
SBR30A60CT
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 60V 15A TO-220-3
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 46 Stücke:
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AnzahlPreis
7+2.9 EUR
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GC2860013 GC2860013.pdf
GC2860013
Hersteller: Diodes Incorporated
Description: CRYSTAL 28.63636MHZ 16PF
Frequency: 28.63636 MHz
ESR (Equivalent Series Resistance): 40 Ohms
Operating Mode: Fundamental
Frequency Tolerance: ±30ppm
Frequency Stability: ±30ppm
Operating Temperature: -20°C ~ 70°C
Type: MHz Crystal
Load Capacitance: 16pF
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GC2860011 GC2860011.pdf
GC2860011
Hersteller: Diodes Incorporated
Description: CRYSTAL 28.6363MHZ 18PF
Frequency: 28.6363 MHz
ESR (Equivalent Series Resistance): 30 Ohms
Operating Mode: Fundamental
Frequency Tolerance: ±30ppm
Frequency Stability: ±50ppm
Operating Temperature: -40°C ~ 85°C
Type: MHz Crystal
Load Capacitance: 18pF
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STPR1020CTW STPR1020CTW.pdf
STPR1020CTW
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 200V 10A TO-220AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 2964 Stücke:
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AnzahlPreis
18+1 EUR
50+0.44 EUR
100+0.37 EUR
500+0.31 EUR
2000+0.29 EUR
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BAV20WQ-7-F BAV19W-BAV21W.pdf
BAV20WQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 150V 400MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 400mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.069 EUR
Mindestbestellmenge: 3000 Stücke
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PI3EQX12802ZHE
PI3EQX12802ZHE
Hersteller: Diodes Incorporated
Description: 12G SAS3 2 PORT 4 CHANNELREDRIVE
Produkt ist nicht verfügbar
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PI3EQX12802ZHEX
PI3EQX12802ZHEX
Hersteller: Diodes Incorporated
Description: 12G SAS3 2 PORT 4 CHANNELREDRIVE
Produkt ist nicht verfügbar
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BZT52C3V9Q-7-F ds18004.pdf
BZT52C3V9Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.9V 370MW SOD123
Tolerance: ±5.13%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.078 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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