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DDTC144VE-7-F DDTC144VE-7-F Diodes Incorporated ds30314.pdf Description: TRANS PREBIAS NPN 50V SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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PI3EQX8908AZFEX PI3EQX8908AZFEX Diodes Incorporated PI3EQX8908A-Product-Brief.pdf Description: IC REDRIVER PCIE 8CH 54TQFN
Packaging: Tape & Reel (TR)
Package / Case: 54-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Type: Buffer, ReDriver
Voltage - Supply: 3V ~ 3.6V
Applications: PCIe
Data Rate (Max): 8Gbps
Supplier Device Package: 54-TQFN (10x5.5)
Signal Conditioning: Input Equalization, Output De-Emphasis
Produkt ist nicht verfügbar
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PI3EQX8908AZFEX PI3EQX8908AZFEX Diodes Incorporated PI3EQX8908A-Product-Brief.pdf Description: IC REDRIVER PCIE 8CH 54TQFN
Packaging: Cut Tape (CT)
Package / Case: 54-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Type: Buffer, ReDriver
Voltage - Supply: 3V ~ 3.6V
Applications: PCIe
Data Rate (Max): 8Gbps
Supplier Device Package: 54-TQFN (10x5.5)
Signal Conditioning: Input Equalization, Output De-Emphasis
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1+19.85 EUR
10+15.63 EUR
25+14.57 EUR
100+13.41 EUR
250+12.86 EUR
500+12.52 EUR
1000+12.25 EUR
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SMCJ120CA-13-F SMCJ120CA-13-F Diodes Incorporated ds19003.pdf Description: TVS DIODE 120VWM 193VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.9A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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SMCJ120CA-13-F SMCJ120CA-13-F Diodes Incorporated ds19003.pdf Description: TVS DIODE 120VWM 193VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.9A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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MMBD2004SWQ-7-F MMBD2004SWQ-7-F Diodes Incorporated ds30443.pdf Description: DIODE ARRAY GP 300V 225MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Qualification: AEC-Q101
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MMBD2004SQ-7-F MMBD2004SQ-7-F Diodes Incorporated MMBD2004SQ.pdf Description: DIODE ARRAY GP 240V 225MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Qualification: AEC-Q101
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30000+0.095 EUR
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B180Q-13-F B180Q-13-F Diodes Incorporated B170Q-B1100Q.pdf Description: DIODE SCHOTTKY 80V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Qualification: AEC-Q101
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B180Q-13-F B180Q-13-F Diodes Incorporated B170Q-B1100Q.pdf Description: DIODE SCHOTTKY 80V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Qualification: AEC-Q101
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FS1ME_HF FS1ME_HF Diodes Incorporated FS1ME.pdf Description: DIODE STANDARD 1000V 1A F1A
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.6 µs
Technology: Standard
Capacitance @ Vr, F: 7.6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: F1A (DO219AA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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DDTA114EUA-7 DDTA114EUA-7 Diodes Incorporated ds30325.pdf Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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NX22A0001Z NX22A0001Z Diodes Incorporated NX22A0001Z.pdf Description: XTAL OSC XO 100.0000MHZ LVPECL
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NX22A0001Z NX22A0001Z Diodes Incorporated NX22A0001Z.pdf Description: XTAL OSC XO 100.0000MHZ LVPECL
Produkt ist nicht verfügbar
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74AUP2G07FW3-7 74AUP2G07FW3-7 Diodes Incorporated 74AUP2G07.pdf Description: IC BUFFER NON-INVERT 3.6V 6DFN
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DFLS240L-7-G DFLS240L-7-G Diodes Incorporated Description: DIODE SCHOTTK 40V 2A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar
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DMNH6042SPDQ-13 DMNH6042SPDQ-13 Diodes Incorporated DMNH6042SPDQ.pdf Description: MOSFET NCH 60V 5.7A POWERDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
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DMNH6042SPDQ-13 DMNH6042SPDQ-13 Diodes Incorporated DMNH6042SPDQ.pdf Description: MOSFET NCH 60V 5.7A POWERDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
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DMNH6042SPSQ-13 DMNH6042SPSQ-13 Diodes Incorporated DMNH6042SPSQ.pdf Description: MOSFET N-CH 60V 24A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMNH6042SPSQ-13 DMNH6042SPSQ-13 Diodes Incorporated DMNH6042SPSQ.pdf Description: MOSFET N-CH 60V 24A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2485 Stücke:
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500+0.56 EUR
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AP130-30RG-7 AP130-30RG-7 Diodes Incorporated AP130.pdf Description: IC REG LDO 300MA 3.0V SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-59R
Voltage - Output (Min/Fixed): 3V
PSRR: 58dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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AP130-15RG-7 AP130-15RG-7 Diodes Incorporated AP130.pdf Description: IC REG LINEAR 1.5V 300MA SC59R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-59R
Voltage - Output (Min/Fixed): 1.5V
PSRR: 58dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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AP130-18RG-7 AP130-18RG-7 Diodes Incorporated AP130.pdf Description: IC REG LINEAR 1.8V 300MA SC59R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-59R
Voltage - Output (Min/Fixed): 1.8V
PSRR: 58dB (100Hz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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AP130-35RG-7 AP130-35RG-7 Diodes Incorporated AP130.pdf Description: IC REG LINEAR 3.5V 300MA SC59R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-59R
Voltage - Output (Min/Fixed): 3.5V
PSRR: 58dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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AP130-28RG-7 AP130-28RG-7 Diodes Incorporated AP130.pdf Description: IC REG LINEAR 2.8V 300MA SC59R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-59R
Voltage - Output (Min/Fixed): 2.8V
PSRR: 58dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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3000+0.48 EUR
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MMSZ5230BQ-7-F MMSZ5230BQ-7-F Diodes Incorporated ds18010.pdf Description: ZENER DIODE SOD123 T&R 3K
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 207000 Stücke:
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3000+0.055 EUR
6000+0.049 EUR
9000+0.046 EUR
15000+0.042 EUR
21000+0.04 EUR
30000+0.038 EUR
75000+0.034 EUR
150000+0.031 EUR
Mindestbestellmenge: 3000
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MMSZ5232BQ-7-F MMSZ5232BQ-7-F Diodes Incorporated ds18010.pdf Description: DIODE ZENER 5.6V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
auf Bestellung 333000 Stücke:
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3000+0.033 EUR
6000+0.032 EUR
9000+0.03 EUR
15000+0.027 EUR
Mindestbestellmenge: 3000
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DMT3006LFV-7 DMT3006LFV-7 Diodes Incorporated DMT3006LFV.pdf Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
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DMT3006LFDFQ-7 DMT3006LFDFQ-7 Diodes Incorporated DMT3006LFDFQ.pdf Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT3006LFG-13 DMT3006LFG-13 Diodes Incorporated DMT3006LFG.pdf Description: MOSFET N-CH 30V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.6A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Qualification: AEC-Q101
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DMT3006LFVQ-13 DMT3006LFVQ-13 Diodes Incorporated DMT3006LFVQ.pdf Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Qualification: AEC-Q101
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BZX84B12Q-7-F BZX84B12Q-7-F Diodes Incorporated BZX84Bxxx.pdf Description: DIODE ZENER 12V 300MW SOT23
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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SBRT20U60CT Diodes Incorporated SBRT20U60CT.pdf Description: DIODE ARRAY SCHOTTKY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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SBR20U60CTFP-G SBR20U60CTFP-G Diodes Incorporated SBR20U60.pdf Description: DIODE ARRAY SBR 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SBR20U60CTFP-JT SBR20U60CTFP-JT Diodes Incorporated SBR20U60CT.pdf Description: DIODE ARRAY SCHOTTKY
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
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SBR20U60CT-G Diodes Incorporated SBR20U60.pdf Description: DIODE ARRAY SBR 60V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SBR20U60CT-01 Diodes Incorporated Description: DIODE ARRAY SCHOTTKY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
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SBRT20U60CTFP SBRT20U60CTFP Diodes Incorporated SBRT20U60CT.pdf Description: DIODE ARRAY SCHOTTKY
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Produkt ist nicht verfügbar
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ZNBG4003JA16TC ZNBG4003JA16TC Diodes Incorporated ZNBG4003.pdf Description: LNB FIXED BIAS U-QFN3030-16
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ZABG6004Q20TC ZABG6004Q20TC Diodes Incorporated ZABG6004.pdf Description: IC CTRLR BIAS FET QSOP-20
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ZABG6004Q20TC ZABG6004Q20TC Diodes Incorporated ZABG6004.pdf Description: IC CTRLR BIAS FET QSOP-20
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ZABG6003JB20TC ZABG6003JB20TC Diodes Incorporated ZABG6003.pdf Description: IC FET BIAS CTLR 6STAGE 20QFN
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ZABG6003Q20TC ZABG6003Q20TC Diodes Incorporated ZABG6003.pdf Description: IC FET BIAS CTLR 6STAGE 20QSOP
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BCP5316TC BCP5316TC Diodes Incorporated BCP51_52_53.pdf Description: TRANS PNP 80V 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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DSS4140V-7 DSS4140V-7 Diodes Incorporated ds31655.pdf Description: TRANS NPN 40V 1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 440mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-563
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
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BSS138K-7 BSS138K-7 Diodes Incorporated BSS138K.pdf Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
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BSS138K-7 BSS138K-7 Diodes Incorporated BSS138K.pdf Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
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BSS138DWQ-13 BSS138DWQ-13 Diodes Incorporated BSS138DWQ.pdf Description: MOSFET 2N-CH 50V 0.2A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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BSS138DWQ-13 BSS138DWQ-13 Diodes Incorporated BSS138DWQ.pdf Description: MOSFET 2N-CH 50V 0.2A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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US1JDF-13 US1JDF-13 Diodes Incorporated US1JDF.pdf Description: DIODE STANDARD 600V 1A DFLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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US1JDF-13 US1JDF-13 Diodes Incorporated US1JDF.pdf Description: DIODE STANDARD 600V 1A DFLAT
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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AZ1117CH2-3.3TRG1 AZ1117CH2-3.3TRG1 Diodes Incorporated AZ1117C.pdf Description: IC REG LINEAR 3.3V 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
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AZ1117CH2-3.3TRG1 AZ1117CH2-3.3TRG1 Diodes Incorporated AZ1117C.pdf Description: IC REG LINEAR 3.3V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
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DSC02120 DSC02120 Diodes Incorporated DSC02120.pdf Description: DIODE SIL CARB 1.2KV 2A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 100mV, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: TO220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 128 µA @ 1200 V
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DSC02120FP DSC02120FP Diodes Incorporated DSC02120FP.pdf Description: DIODE SIL CARB 1.2KV 2A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 132pF @ 100mV, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: ITO-220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 128 µA @ 1200 V
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DMTH4002SCTBQ-13 DMTH4002SCTBQ-13 Diodes Incorporated DMTH4002SCTBQ.pdf Description: MOSFET BVDSS: 31V~40V TO263 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
Power Dissipation (Max): 6W (Ta), 166.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 20 V
Qualification: AEC-Q101
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DMTH4002SCTB-13 Diodes Incorporated DMTH4002SCTB.pdf Description: MOSFET BVDSS: 31V~40V TO263 T&R
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G20H100CTW G20H100CTW Diodes Incorporated G20H100CTW.pdf Description: DIODE ARR SCHOT 100V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
Qualification: AEC-Q101
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G20H100CTFW G20H100CTFW Diodes Incorporated G20H100CTFW.pdf Description: DIODE ARR SCHOTTKY 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
Qualification: AEC-Q101
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BCP5616TTA BCP5616TTA Diodes Incorporated BCP5616T.pdf Description: TRANS NPN 80V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2.5 W
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BCP5616QTC BCP5616QTC Diodes Incorporated BCP5416Q_BCP5616Q.pdf Description: TRANS NPN 80V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Qualification: AEC-Q101
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DDTC144VE-7-F ds30314.pdf
DDTC144VE-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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PI3EQX8908AZFEX PI3EQX8908A-Product-Brief.pdf
PI3EQX8908AZFEX
Hersteller: Diodes Incorporated
Description: IC REDRIVER PCIE 8CH 54TQFN
Packaging: Tape & Reel (TR)
Package / Case: 54-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Type: Buffer, ReDriver
Voltage - Supply: 3V ~ 3.6V
Applications: PCIe
Data Rate (Max): 8Gbps
Supplier Device Package: 54-TQFN (10x5.5)
Signal Conditioning: Input Equalization, Output De-Emphasis
Produkt ist nicht verfügbar
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PI3EQX8908AZFEX PI3EQX8908A-Product-Brief.pdf
PI3EQX8908AZFEX
Hersteller: Diodes Incorporated
Description: IC REDRIVER PCIE 8CH 54TQFN
Packaging: Cut Tape (CT)
Package / Case: 54-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Type: Buffer, ReDriver
Voltage - Supply: 3V ~ 3.6V
Applications: PCIe
Data Rate (Max): 8Gbps
Supplier Device Package: 54-TQFN (10x5.5)
Signal Conditioning: Input Equalization, Output De-Emphasis
auf Bestellung 3292 Stücke:
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Anzahl Preis
1+19.85 EUR
10+15.63 EUR
25+14.57 EUR
100+13.41 EUR
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SMCJ120CA-13-F ds19003.pdf
SMCJ120CA-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 120VWM 193VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.9A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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3000+0.79 EUR
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SMCJ120CA-13-F ds19003.pdf
SMCJ120CA-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 120VWM 193VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.9A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 29500 Stücke:
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15+1.18 EUR
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MMBD2004SWQ-7-F ds30443.pdf
MMBD2004SWQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 300V 225MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMBD2004SQ-7-F MMBD2004SQ.pdf
MMBD2004SQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 240V 225MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Qualification: AEC-Q101
auf Bestellung 111000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
15000+0.1 EUR
21000+0.099 EUR
30000+0.095 EUR
75000+0.093 EUR
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B180Q-13-F B170Q-B1100Q.pdf
B180Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 80V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Qualification: AEC-Q101
auf Bestellung 50000 Stücke:
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Anzahl Preis
5000+0.16 EUR
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B180Q-13-F B170Q-B1100Q.pdf
B180Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 80V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Qualification: AEC-Q101
auf Bestellung 53137 Stücke:
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29+0.62 EUR
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500+0.26 EUR
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FS1ME_HF FS1ME.pdf
FS1ME_HF
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 1000V 1A F1A
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.6 µs
Technology: Standard
Capacitance @ Vr, F: 7.6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: F1A (DO219AA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 3390000 Stücke:
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10000+0.12 EUR
20000+0.11 EUR
50000+0.1 EUR
70000+0.099 EUR
Mindestbestellmenge: 10000
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DDTA114EUA-7 ds30325.pdf
DDTA114EUA-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.099 EUR
Mindestbestellmenge: 3000
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NX22A0001Z NX22A0001Z.pdf
NX22A0001Z
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 100.0000MHZ LVPECL
Produkt ist nicht verfügbar
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NX22A0001Z NX22A0001Z.pdf
NX22A0001Z
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 100.0000MHZ LVPECL
Produkt ist nicht verfügbar
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74AUP2G07FW3-7 74AUP2G07.pdf
74AUP2G07FW3-7
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 3.6V 6DFN
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5000+0.14 EUR
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DFLS240L-7-G
DFLS240L-7-G
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTK 40V 2A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar
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DMNH6042SPDQ-13 DMNH6042SPDQ.pdf
DMNH6042SPDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET NCH 60V 5.7A POWERDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
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2500+0.61 EUR
5000+0.57 EUR
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DMNH6042SPDQ-13 DMNH6042SPDQ.pdf
DMNH6042SPDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET NCH 60V 5.7A POWERDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 12100 Stücke:
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10+1.9 EUR
14+1.29 EUR
100+0.95 EUR
500+0.77 EUR
1000+0.7 EUR
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DMNH6042SPSQ-13 DMNH6042SPSQ.pdf
DMNH6042SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 24A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMNH6042SPSQ-13 DMNH6042SPSQ.pdf
DMNH6042SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 24A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.74 EUR
17+1.09 EUR
100+0.72 EUR
500+0.56 EUR
1000+0.5 EUR
Mindestbestellmenge: 11
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AP130-30RG-7 AP130.pdf
AP130-30RG-7
Hersteller: Diodes Incorporated
Description: IC REG LDO 300MA 3.0V SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-59R
Voltage - Output (Min/Fixed): 3V
PSRR: 58dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.5 EUR
6000+0.46 EUR
9000+0.44 EUR
Mindestbestellmenge: 3000
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AP130-15RG-7 AP130.pdf
AP130-15RG-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.5V 300MA SC59R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-59R
Voltage - Output (Min/Fixed): 1.5V
PSRR: 58dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.51 EUR
Mindestbestellmenge: 3000
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AP130-18RG-7 AP130.pdf
AP130-18RG-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.8V 300MA SC59R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-59R
Voltage - Output (Min/Fixed): 1.8V
PSRR: 58dB (100Hz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.5 EUR
6000+0.47 EUR
9000+0.45 EUR
Mindestbestellmenge: 3000
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AP130-35RG-7 AP130.pdf
AP130-35RG-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.5V 300MA SC59R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-59R
Voltage - Output (Min/Fixed): 3.5V
PSRR: 58dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.51 EUR
6000+0.48 EUR
9000+0.46 EUR
Mindestbestellmenge: 3000
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AP130-28RG-7 AP130.pdf
AP130-28RG-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 2.8V 300MA SC59R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-59R
Voltage - Output (Min/Fixed): 2.8V
PSRR: 58dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.48 EUR
6000+0.45 EUR
Mindestbestellmenge: 3000
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MMSZ5230BQ-7-F ds18010.pdf
MMSZ5230BQ-7-F
Hersteller: Diodes Incorporated
Description: ZENER DIODE SOD123 T&R 3K
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 207000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.055 EUR
6000+0.049 EUR
9000+0.046 EUR
15000+0.042 EUR
21000+0.04 EUR
30000+0.038 EUR
75000+0.034 EUR
150000+0.031 EUR
Mindestbestellmenge: 3000
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MMSZ5232BQ-7-F ds18010.pdf
MMSZ5232BQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.6V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
auf Bestellung 333000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.033 EUR
6000+0.032 EUR
9000+0.03 EUR
15000+0.027 EUR
Mindestbestellmenge: 3000
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DMT3006LFV-7 DMT3006LFV.pdf
DMT3006LFV-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
auf Bestellung 188000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.43 EUR
4000+0.4 EUR
6000+0.38 EUR
10000+0.36 EUR
14000+0.35 EUR
Mindestbestellmenge: 2000
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DMT3006LFDFQ-7 DMT3006LFDFQ.pdf
DMT3006LFDFQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT3006LFG-13 DMT3006LFG.pdf
DMT3006LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.6A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.46 EUR
6000+0.43 EUR
9000+0.41 EUR
Mindestbestellmenge: 3000
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DMT3006LFVQ-13 DMT3006LFVQ.pdf
DMT3006LFVQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B12Q-7-F BZX84Bxxx.pdf
BZX84B12Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 12V 300MW SOT23
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.058 EUR
6000+0.052 EUR
9000+0.048 EUR
15000+0.045 EUR
21000+0.043 EUR
30000+0.041 EUR
Mindestbestellmenge: 3000
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SBRT20U60CT SBRT20U60CT.pdf
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOTTKY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Produkt ist nicht verfügbar
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SBR20U60CTFP-G SBR20U60.pdf
SBR20U60CTFP-G
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
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SBR20U60CTFP-JT SBR20U60CT.pdf
SBR20U60CTFP-JT
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOTTKY
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
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SBR20U60CT-G SBR20U60.pdf
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 60V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
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SBR20U60CT-01
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOTTKY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBRT20U60CTFP SBRT20U60CT.pdf
SBRT20U60CTFP
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOTTKY
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Produkt ist nicht verfügbar
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ZNBG4003JA16TC ZNBG4003.pdf
ZNBG4003JA16TC
Hersteller: Diodes Incorporated
Description: LNB FIXED BIAS U-QFN3030-16
Produkt ist nicht verfügbar
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ZABG6004Q20TC ZABG6004.pdf
ZABG6004Q20TC
Hersteller: Diodes Incorporated
Description: IC CTRLR BIAS FET QSOP-20
Produkt ist nicht verfügbar
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ZABG6004Q20TC ZABG6004.pdf
ZABG6004Q20TC
Hersteller: Diodes Incorporated
Description: IC CTRLR BIAS FET QSOP-20
Produkt ist nicht verfügbar
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ZABG6003JB20TC ZABG6003.pdf
ZABG6003JB20TC
Hersteller: Diodes Incorporated
Description: IC FET BIAS CTLR 6STAGE 20QFN
Produkt ist nicht verfügbar
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ZABG6003Q20TC ZABG6003.pdf
ZABG6003Q20TC
Hersteller: Diodes Incorporated
Description: IC FET BIAS CTLR 6STAGE 20QSOP
Produkt ist nicht verfügbar
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BCP5316TC BCP51_52_53.pdf
BCP5316TC
Hersteller: Diodes Incorporated
Description: TRANS PNP 80V 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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DSS4140V-7 ds31655.pdf
DSS4140V-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 440mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-563
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
30000+0.1 EUR
Mindestbestellmenge: 3000
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BSS138K-7 BSS138K.pdf
BSS138K-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.084 EUR
6000+0.075 EUR
9000+0.071 EUR
15000+0.066 EUR
Mindestbestellmenge: 3000
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BSS138K-7 BSS138K.pdf
BSS138K-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
auf Bestellung 15552 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
71+0.25 EUR
113+0.16 EUR
500+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 44
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BSS138DWQ-13 BSS138DWQ.pdf
BSS138DWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.2A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS138DWQ-13 BSS138DWQ.pdf
BSS138DWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.2A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1345 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 20
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US1JDF-13 US1JDF.pdf
US1JDF-13
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 600V 1A DFLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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US1JDF-13 US1JDF.pdf
US1JDF-13
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 600V 1A DFLAT
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 3677 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
40+0.44 EUR
100+0.3 EUR
500+0.22 EUR
1000+0.19 EUR
2000+0.18 EUR
Mindestbestellmenge: 34
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AZ1117CH2-3.3TRG1 AZ1117C.pdf
AZ1117CH2-3.3TRG1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.3V 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
Produkt ist nicht verfügbar
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AZ1117CH2-3.3TRG1 AZ1117C.pdf
AZ1117CH2-3.3TRG1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.3V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
auf Bestellung 1635 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
76+0.23 EUR
85+0.21 EUR
100+0.18 EUR
250+0.16 EUR
500+0.15 EUR
Mindestbestellmenge: 50
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DSC02120 DSC02120.pdf
DSC02120
Hersteller: Diodes Incorporated
Description: DIODE SIL CARB 1.2KV 2A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 100mV, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: TO220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 128 µA @ 1200 V
auf Bestellung 1550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.93 EUR
10+5.32 EUR
100+4.36 EUR
500+3.71 EUR
1000+3.16 EUR
Mindestbestellmenge: 3
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DSC02120FP DSC02120FP.pdf
DSC02120FP
Hersteller: Diodes Incorporated
Description: DIODE SIL CARB 1.2KV 2A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 132pF @ 100mV, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: ITO-220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 128 µA @ 1200 V
auf Bestellung 1844 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.09 EUR
50+4.83 EUR
100+4.14 EUR
500+3.68 EUR
1000+3.15 EUR
Mindestbestellmenge: 3
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DMTH4002SCTBQ-13 DMTH4002SCTBQ.pdf
DMTH4002SCTBQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V TO263 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
Power Dissipation (Max): 6W (Ta), 166.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.45 EUR
1600+1.34 EUR
2400+1.3 EUR
Mindestbestellmenge: 800
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DMTH4002SCTB-13 DMTH4002SCTB.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V TO263 T&R
Produkt ist nicht verfügbar
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G20H100CTW G20H100CTW.pdf
G20H100CTW
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 100V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 3398 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
50+0.6 EUR
100+0.52 EUR
1000+0.5 EUR
2000+0.47 EUR
Mindestbestellmenge: 12
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G20H100CTFW G20H100CTFW.pdf
G20H100CTFW
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTTKY 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 3308 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
50+0.55 EUR
500+0.47 EUR
1000+0.46 EUR
Mindestbestellmenge: 17
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BCP5616TTA BCP5616T.pdf
BCP5616TTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2.5 W
auf Bestellung 19 Stücke:
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BCP5616QTC BCP5416Q_BCP5616Q.pdf
BCP5616QTC
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
36+0.49 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.21 EUR
2000+0.19 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
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