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BZT52C2V0TQ-7-F BZT52C2V0TQ-7-F Diodes Incorporated ds30502.pdf Description: ZENER DIODE SOD523 T&R 3K
Tolerance: ±4.5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 150 µA @ 1 V
Qualification: AEC-Q101
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1N4761A-T 1N4761A-T Diodes Incorporated ds18007.pdf Description: DIODE ZENER 75V 1W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 175 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 56 V
Produkt ist nicht verfügbar
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NX71074001 Diodes Incorporated Description: XTAL OSC
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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MMBD4448HADWQ-7-F MMBD4448HADWQ-7-F Diodes Incorporated MMBD4448HCQW_AQW_ADW_CDW_SDW_TW.pdf Description: DIODE ARRAY GP 80V 500MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 500mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Qualification: AEC-Q101
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ZXCT212QBDW-7 ZXCT212QBDW-7 Diodes Incorporated ZXCT21xQ.pdf Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Part Status: Active
Supplier Device Package: SOT-363
Operating Temperature: -40°C ~ 125°C (TA)
Accuracy: ±0.8%
Voltage - Input: 2.7V ~ 26V
Function: Current Monitor
Mounting Type: Surface Mount
Sensing Method: High/Low-Side
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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ZXCT212QBDW-7 ZXCT212QBDW-7 Diodes Incorporated ZXCT21xQ.pdf Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Part Status: Active
Supplier Device Package: SOT-363
Operating Temperature: -40°C ~ 125°C (TA)
Accuracy: ±0.8%
Voltage - Input: 2.7V ~ 26V
Function: Current Monitor
Mounting Type: Surface Mount
Sensing Method: High/Low-Side
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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ZXCT215CDW-7 ZXCT215CDW-7 Diodes Incorporated ZXCT21x.pdf Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-363
Operating Temperature: -40°C ~ 125°C (TA)
Accuracy: ±0.5%
Voltage - Input: 2.7V ~ 26V
Function: Current Monitor
Mounting Type: Surface Mount
Sensing Method: High/Low-Side
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ZXCT215CDW-7 ZXCT215CDW-7 Diodes Incorporated ZXCT21x.pdf Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.5%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Part Status: Active
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DMN53D0LT-7 DMN53D0LT-7 Diodes Incorporated DMN53D0LT.pdf Description: DIODE
Packaging: Bulk
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V
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DMN53D0LDW-7-52 DMN53D0LDW-7-52 Diodes Incorporated DMN53D0LDW.pdf Description: 2N7002 Family SOT363 T&R 3K
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Produkt ist nicht verfügbar
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DMN53D0LDWQ-7 DMN53D0LDWQ-7 Diodes Incorporated DMN53D0LDWQ.pdf Description: MOSFET 2N-CH 50V 0.46A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 49.5pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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DMN53D0LDWQ-13 DMN53D0LDWQ-13 Diodes Incorporated DMN53D0LDWQ.pdf Description: MOSFET 2N-CH 50V 0.46A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 49.5pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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DMJ65H650SCTI Diodes Incorporated Description: MOSFET N-CH 650V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB (Type TH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 100 V
Produkt ist nicht verfügbar
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DMWS120H100SM4 DMWS120H100SM4 Diodes Incorporated DMWS120H100SM4.pdf Description: SIC MOSFET BVDSS: >1000V TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.2A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 15V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 1000 V
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PI6ULS5V9306UEX PI6ULS5V9306UEX Diodes Incorporated PI6ULS5V9306.pdf Description: IC XLTR VL BIDIR 8-SOIC
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.3 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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PI6ULS5V9306UEX PI6ULS5V9306UEX Diodes Incorporated PI6ULS5V9306.pdf Description: IC XLTR VL BIDIR 8-SOIC
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.3 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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B170-13-F-2477 Diodes Incorporated Description: DIODE
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 70 V
Produkt ist nicht verfügbar
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BAR99TA BAR99TA Diodes Incorporated Description: DIODE SWITCHING SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Produkt ist nicht verfügbar
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SBRT10U60D1Q-13 SBRT10U60D1Q-13 Diodes Incorporated SBRT10U60D1Q.pdf Description: DIODE SBR 60V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
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SBRT10U60D1Q-13 SBRT10U60D1Q-13 Diodes Incorporated SBRT10U60D1Q.pdf Description: DIODE SBR 60V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
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LSC02120FW LSC02120FW Diodes Incorporated LSC02120FW.pdf Description: DIODE SIL CARB 1.2KV 2A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 105pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: ITO-220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 128 µA @ 1200 V
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MBR1040CT-LS Diodes Incorporated Description: SCHOTTKY RECTIFIER
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar
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MBR1040-LS Diodes Incorporated Description: DIODE
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar
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DMN3060LCA3-7 DMN3060LCA3-7 Diodes Incorporated DMN3060LCA3.pdf Description: MOSFET N-CH 30V 3.9A X4DSN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V
Power Dissipation (Max): 790mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: X4-DSN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V
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DMN3060LCA3-7 DMN3060LCA3-7 Diodes Incorporated DMN3060LCA3.pdf Description: MOSFET N-CH 30V 3.9A X4DSN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V
Power Dissipation (Max): 790mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: X4-DSN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V
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100+0.37 EUR
500+0.27 EUR
1000+0.25 EUR
2000+0.23 EUR
5000+0.2 EUR
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US1KSAFS-13 US1KSAFS-13 Diodes Incorporated US1KSAFS.pdf Description: DIODE STANDARD 800V 1A SMAFS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA-FS
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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US1KSAFS-13 US1KSAFS-13 Diodes Incorporated US1KSAFS.pdf Description: DIODE STANDARD 800V 1A SMAFS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA-FS
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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DMNH6022SSD-13 DMNH6022SSD-13 Diodes Incorporated DMNH6022SSD.pdf Description: MOSFET 2NCH 60V 7.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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DMNH6022SSD-13 DMNH6022SSD-13 Diodes Incorporated DMNH6022SSD.pdf Description: MOSFET 2NCH 60V 7.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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MMSZ5228BQ-7-F MMSZ5228BQ-7-F Diodes Incorporated ds18010.pdf Description: ZENER DIODE SOD123 T&R 3K
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 370 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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DDTC144EUA-7-F-50 DDTC144EUA-7-F-50 Diodes Incorporated ds30321.pdf Description: Prebias Transistor SOT323 T&R 3K
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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DSC10A065 DSC10A065 Diodes Incorporated DSC10A065.pdf Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 436pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 8858 Stücke:
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BZX84C27Q-7-F BZX84C27Q-7-F Diodes Incorporated ds18001.pdf Description: DIODE ZENER 27V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±7.04%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Grade: Automotive
Qualification: AEC-Q101
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21000+0.075 EUR
30000+0.071 EUR
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DMN3016LDN-7 DMN3016LDN-7 Diodes Incorporated DMN3016LDN.pdf Description: MOSFET 2N-CH 30V 7.3A 8VDFN
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Supplier Device Package: V-DFN3030-8 (Type J)
Vgs(th) (Max) @ Id: 2V @ 250µA
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
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DMN3016LDN-7 DMN3016LDN-7 Diodes Incorporated DMN3016LDN.pdf Description: MOSFET 2N-CH 30V 7.3A 8VDFN
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: V-DFN3030-8 (Type J)
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
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DMTH4004SPSQ-13 DMTH4004SPSQ-13 Diodes Incorporated DMTH4004SPSQ.pdf Description: MOSFET N-CH 40V 31A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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DMTH4004SPSQ-13 DMTH4004SPSQ-13 Diodes Incorporated DMTH4004SPSQ.pdf Description: MOSFET N-CH 40V 31A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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DMTH46M7SFVWQ-7 DMTH46M7SFVWQ-7 Diodes Incorporated DMTH46M7SFVWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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DMTH46M7SFVWQ-7 DMTH46M7SFVWQ-7 Diodes Incorporated DMTH46M7SFVWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 1325 Stücke:
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500+0.7 EUR
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DMTH4014LFVWQ-7 DMTH4014LFVWQ-7 Diodes Incorporated DMTH4014LFVWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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DMTH4014LFVWQ-7 DMTH4014LFVWQ-7 Diodes Incorporated DMTH4014LFVWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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DMTH43M8LK3Q-13 DMTH43M8LK3Q-13 Diodes Incorporated DMTH43M8LK3Q.pdf Description: MOSFET N-CHANNEL 40V 100A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 88W (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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2500+0.86 EUR
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7500+0.76 EUR
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DMTH43M8LK3Q-13 DMTH43M8LK3Q-13 Diodes Incorporated DMTH43M8LK3Q.pdf Description: MOSFET N-CHANNEL 40V 100A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 88W (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 164380 Stücke:
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11+2 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.95 EUR
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DMTH41M8SPSQ-13 DMTH41M8SPSQ-13 Diodes Incorporated DMTH41M8SPSQ.pdf Description: MOSFET N-CH 40V 100A PWRDI5060-8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type K)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.03W
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMTH41M8SPSQ-13 DMTH41M8SPSQ-13 Diodes Incorporated DMTH41M8SPSQ.pdf Description: MOSFET N-CH 40V 100A PWRDI5060-8
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerDI5060-8 (Type K)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.03W
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
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10+2.96 EUR
100+2.07 EUR
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DMTH4008LFDFWQ-7 DMTH4008LFDFWQ-7 Diodes Incorporated DMTH4008LFDFWQ.pdf Description: MOSFET N-CH 40V 11.6A 6UDFN
Grade: Automotive
Package / Case: 6-UDFN Exposed Pad
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
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DMTH4008LFDFWQ-7 DMTH4008LFDFWQ-7 Diodes Incorporated DMTH4008LFDFWQ.pdf Description: MOSFET N-CH 40V 11.6A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4295 Stücke:
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19+1.13 EUR
100+0.74 EUR
500+0.57 EUR
1000+0.51 EUR
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DMTH43M8LFGQ-13 DMTH43M8LFGQ-13 Diodes Incorporated DMTH43M8LFGQ.pdf Description: MOSFET N-CH 40V PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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DMTH43M8LFGQ-13 DMTH43M8LFGQ-13 Diodes Incorporated DMTH43M8LFGQ.pdf Description: MOSFET N-CH 40V PWRDI3333
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
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1000+0.77 EUR
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DMTH4008LPS-13 DMTH4008LPS-13 Diodes Incorporated DMTH4008LPS.pdf Description: MOSFET N-CH 40V PWRDI5060
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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DMTH4008LPS-13 DMTH4008LPS-13 Diodes Incorporated DMTH4008LPS.pdf Description: MOSFET N-CH 40V PWRDI5060
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
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DMTH4008LFDFWQ-13 DMTH4008LFDFWQ-13 Diodes Incorporated DMTH4008LFDFWQ.pdf Description: MOSFET N-CH 40V 11.6A 6UDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMTH4008LFDFWQ-13 DMTH4008LFDFWQ-13 Diodes Incorporated DMTH4008LFDFWQ.pdf Description: MOSFET N-CH 40V 11.6A 6UDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4803 Stücke:
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19+1.13 EUR
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500+0.58 EUR
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DMTH4007SPDQ-13 DMTH4007SPDQ-13 Diodes Incorporated DMTH4007SPDQ.pdf Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 415000 Stücke:
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2500+1.01 EUR
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DMTH4007SPDQ-13 DMTH4007SPDQ-13 Diodes Incorporated DMTH4007SPDQ.pdf Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 415399 Stücke:
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DMTH45M5LPDWQ-13 DMTH45M5LPDWQ-13 Diodes Incorporated DMTH45M5LPDWQ.pdf Description: MOSFET 2N-CH 40V 79A PWRDI50
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type UXD)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 60W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
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DMTH45M5LPDWQ-13 DMTH45M5LPDWQ-13 Diodes Incorporated DMTH45M5LPDWQ.pdf Description: MOSFET 2N-CH 40V 79A PWRDI50
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type UXD)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 60W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 7519 Stücke:
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UF32F6204Z Diodes Incorporated fcpdatasheet?file=UF%2FUF32F6204Z.pdf Description: CRYSTAL OSCILLATOR SEAM3225 T&R
Base Resonator: Crystal
Frequency: 156.25 MHz
Part Status: Active
Height - Seated (Max): 0.041" (1.05mm)
Current - Supply (Max): 50mA
Voltage - Supply: 2.5V ~ 3.3V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVPECL
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Package / Case: 6-SMD, No Lead
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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UF32F6204Z Diodes Incorporated fcpdatasheet?file=UF%2FUF32F6204Z.pdf Description: CRYSTAL OSCILLATOR SEAM3225 T&R
Base Resonator: Crystal
Frequency: 156.25 MHz
Part Status: Active
Height - Seated (Max): 0.041" (1.05mm)
Current - Supply (Max): 50mA
Voltage - Supply: 2.5V ~ 3.3V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVPECL
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Package / Case: 6-SMD, No Lead
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
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3+9.53 EUR
10+9.02 EUR
50+8.52 EUR
100+8.02 EUR
500+7.77 EUR
1000+6.66 EUR
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APX809S00-26SA-7 APX809S00-26SA-7 Diodes Incorporated APX809S-810S.pdf Description: IC SUPERVISOR 1 CHANNEL SOT23
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: SOT-23-3
Voltage - Threshold: 2.63V
Reset Timeout: 1ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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BZT52C2V0TQ-7-F ds30502.pdf
BZT52C2V0TQ-7-F
Hersteller: Diodes Incorporated
Description: ZENER DIODE SOD523 T&R 3K
Tolerance: ±4.5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 150 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 275360 Stücke:
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AnzahlPrivatkunde
42+0.5 EUR
62+0.35 EUR
126+0.17 EUR
500+0.14 EUR
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1N4761A-T ds18007.pdf
1N4761A-T
Hersteller: Diodes Incorporated
Description: DIODE ZENER 75V 1W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 175 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 56 V
Produkt ist nicht verfügbar
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NX71074001
Hersteller: Diodes Incorporated
Description: XTAL OSC
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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MMBD4448HADWQ-7-F MMBD4448HCQW_AQW_ADW_CDW_SDW_TW.pdf
MMBD4448HADWQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 80V 500MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 500mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Qualification: AEC-Q101
auf Bestellung 3060 Stücke:
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AnzahlPrivatkunde
21+1.02 EUR
34+0.63 EUR
100+0.4 EUR
500+0.3 EUR
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ZXCT212QBDW-7 ZXCT21xQ.pdf
ZXCT212QBDW-7
Hersteller: Diodes Incorporated
Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Part Status: Active
Supplier Device Package: SOT-363
Operating Temperature: -40°C ~ 125°C (TA)
Accuracy: ±0.8%
Voltage - Input: 2.7V ~ 26V
Function: Current Monitor
Mounting Type: Surface Mount
Sensing Method: High/Low-Side
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.75 EUR
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ZXCT212QBDW-7 ZXCT21xQ.pdf
ZXCT212QBDW-7
Hersteller: Diodes Incorporated
Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Part Status: Active
Supplier Device Package: SOT-363
Operating Temperature: -40°C ~ 125°C (TA)
Accuracy: ±0.8%
Voltage - Input: 2.7V ~ 26V
Function: Current Monitor
Mounting Type: Surface Mount
Sensing Method: High/Low-Side
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.76 EUR
14+1.57 EUR
25+1.5 EUR
100+1.23 EUR
250+1.14 EUR
500+1.01 EUR
1000+0.8 EUR
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ZXCT215CDW-7 ZXCT21x.pdf
ZXCT215CDW-7
Hersteller: Diodes Incorporated
Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-363
Operating Temperature: -40°C ~ 125°C (TA)
Accuracy: ±0.5%
Voltage - Input: 2.7V ~ 26V
Function: Current Monitor
Mounting Type: Surface Mount
Sensing Method: High/Low-Side
auf Bestellung 93000 Stücke:
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AnzahlPrivatkunde
3000+0.31 EUR
6000+0.3 EUR
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ZXCT215CDW-7 ZXCT21x.pdf
ZXCT215CDW-7
Hersteller: Diodes Incorporated
Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.5%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.76 EUR
20+1.06 EUR
25+0.87 EUR
100+0.67 EUR
250+0.56 EUR
500+0.5 EUR
1000+0.45 EUR
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DMN53D0LT-7 DMN53D0LT.pdf
DMN53D0LT-7
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V
auf Bestellung 4776 Stücke:
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AnzahlPrivatkunde
28+0.75 EUR
40+0.52 EUR
100+0.26 EUR
500+0.21 EUR
1000+0.17 EUR
2000+0.13 EUR
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DMN53D0LDW-7-52 DMN53D0LDW.pdf
DMN53D0LDW-7-52
Hersteller: Diodes Incorporated
Description: 2N7002 Family SOT363 T&R 3K
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Produkt ist nicht verfügbar
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DMN53D0LDWQ-7 DMN53D0LDWQ.pdf
DMN53D0LDWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.46A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 49.5pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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3000+0.2 EUR
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75000+0.15 EUR
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DMN53D0LDWQ-13 DMN53D0LDWQ.pdf
DMN53D0LDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.46A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 49.5pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 530000 Stücke:
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10000+0.18 EUR
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DMJ65H650SCTI
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 650V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB (Type TH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 100 V
Produkt ist nicht verfügbar
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DMWS120H100SM4 DMWS120H100SM4.pdf
DMWS120H100SM4
Hersteller: Diodes Incorporated
Description: SIC MOSFET BVDSS: >1000V TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.2A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 15V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 1000 V
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PI6ULS5V9306UEX PI6ULS5V9306.pdf
PI6ULS5V9306UEX
Hersteller: Diodes Incorporated
Description: IC XLTR VL BIDIR 8-SOIC
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.3 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
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PI6ULS5V9306UEX PI6ULS5V9306.pdf
PI6ULS5V9306UEX
Hersteller: Diodes Incorporated
Description: IC XLTR VL BIDIR 8-SOIC
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.3 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 932 Stücke:
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12+1.88 EUR
16+1.36 EUR
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100+1.07 EUR
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B170-13-F-2477
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 70 V
Produkt ist nicht verfügbar
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BAR99TA
BAR99TA
Hersteller: Diodes Incorporated
Description: DIODE SWITCHING SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Produkt ist nicht verfügbar
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SBRT10U60D1Q-13 SBRT10U60D1Q.pdf
SBRT10U60D1Q-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
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2500+0.65 EUR
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SBRT10U60D1Q-13 SBRT10U60D1Q.pdf
SBRT10U60D1Q-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
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LSC02120FW LSC02120FW.pdf
LSC02120FW
Hersteller: Diodes Incorporated
Description: DIODE SIL CARB 1.2KV 2A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 105pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: ITO-220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 128 µA @ 1200 V
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4+5.99 EUR
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MBR1040CT-LS
Hersteller: Diodes Incorporated
Description: SCHOTTKY RECTIFIER
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar
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MBR1040-LS
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar
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DMN3060LCA3-7 DMN3060LCA3.pdf
DMN3060LCA3-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.9A X4DSN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V
Power Dissipation (Max): 790mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: X4-DSN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V
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10000+0.18 EUR
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DMN3060LCA3-7 DMN3060LCA3.pdf
DMN3060LCA3-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.9A X4DSN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V
Power Dissipation (Max): 790mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: X4-DSN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V
auf Bestellung 11383 Stücke:
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23+0.94 EUR
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US1KSAFS-13 US1KSAFS.pdf
US1KSAFS-13
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 800V 1A SMAFS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA-FS
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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US1KSAFS-13 US1KSAFS.pdf
US1KSAFS-13
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 800V 1A SMAFS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA-FS
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 9497 Stücke:
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31+0.69 EUR
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DMNH6022SSD-13 DMNH6022SSD.pdf
DMNH6022SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2NCH 60V 7.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Produkt ist nicht verfügbar
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DMNH6022SSD-13 DMNH6022SSD.pdf
DMNH6022SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2NCH 60V 7.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 2497 Stücke:
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MMSZ5228BQ-7-F ds18010.pdf
MMSZ5228BQ-7-F
Hersteller: Diodes Incorporated
Description: ZENER DIODE SOD123 T&R 3K
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 370 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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3000+0.069 EUR
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9000+0.056 EUR
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DDTC144EUA-7-F-50 ds30321.pdf
DDTC144EUA-7-F-50
Hersteller: Diodes Incorporated
Description: Prebias Transistor SOT323 T&R 3K
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Produkt ist nicht verfügbar
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DSC10A065 DSC10A065.pdf
DSC10A065
Hersteller: Diodes Incorporated
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 436pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 8858 Stücke:
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4+6.43 EUR
50+3.22 EUR
100+2.92 EUR
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BZX84C27Q-7-F ds18001.pdf
BZX84C27Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 27V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±7.04%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Grade: Automotive
Qualification: AEC-Q101
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3000+0.1 EUR
6000+0.089 EUR
9000+0.084 EUR
15000+0.079 EUR
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30000+0.071 EUR
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DMN3016LDN-7 DMN3016LDN.pdf
DMN3016LDN-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.3A 8VDFN
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Supplier Device Package: V-DFN3030-8 (Type J)
Vgs(th) (Max) @ Id: 2V @ 250µA
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
auf Bestellung 162000 Stücke:
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AnzahlPrivatkunde
3000+0.36 EUR
6000+0.33 EUR
9000+0.31 EUR
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DMN3016LDN-7 DMN3016LDN.pdf
DMN3016LDN-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.3A 8VDFN
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: V-DFN3030-8 (Type J)
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
auf Bestellung 163878 Stücke:
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AnzahlPrivatkunde
20+1.05 EUR
24+0.9 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.39 EUR
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DMTH4004SPSQ-13 DMTH4004SPSQ.pdf
DMTH4004SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 31A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 440000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.15 EUR
5000+1.11 EUR
12500+1.06 EUR
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DMTH4004SPSQ-13 DMTH4004SPSQ.pdf
DMTH4004SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 31A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 442494 Stücke:
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AnzahlPrivatkunde
9+2.59 EUR
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DMTH46M7SFVWQ-7 DMTH46M7SFVWQ.pdf
DMTH46M7SFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMTH46M7SFVWQ-7 DMTH46M7SFVWQ.pdf
DMTH46M7SFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 1325 Stücke:
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AnzahlPrivatkunde
12+1.84 EUR
17+1.29 EUR
100+0.87 EUR
500+0.7 EUR
1000+0.64 EUR
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DMTH4014LFVWQ-7 DMTH4014LFVWQ.pdf
DMTH4014LFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMTH4014LFVWQ-7 DMTH4014LFVWQ.pdf
DMTH4014LFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 885 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.63 EUR
21+1.02 EUR
100+0.68 EUR
500+0.54 EUR
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DMTH43M8LK3Q-13 DMTH43M8LK3Q.pdf
DMTH43M8LK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CHANNEL 40V 100A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 88W (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 160000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.86 EUR
5000+0.8 EUR
7500+0.76 EUR
12500+0.74 EUR
17500+0.71 EUR
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DMTH43M8LK3Q-13 DMTH43M8LK3Q.pdf
DMTH43M8LK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CHANNEL 40V 100A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 88W (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 164380 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.14 EUR
11+2 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.95 EUR
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DMTH41M8SPSQ-13 DMTH41M8SPSQ.pdf
DMTH41M8SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 100A PWRDI5060-8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type K)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.03W
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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DMTH41M8SPSQ-13 DMTH41M8SPSQ.pdf
DMTH41M8SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 100A PWRDI5060-8
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerDI5060-8 (Type K)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.03W
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 1187 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.5 EUR
10+2.96 EUR
100+2.07 EUR
500+1.73 EUR
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DMTH4008LFDFWQ-7 DMTH4008LFDFWQ.pdf
DMTH4008LFDFWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 11.6A 6UDFN
Grade: Automotive
Package / Case: 6-UDFN Exposed Pad
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.43 EUR
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DMTH4008LFDFWQ-7 DMTH4008LFDFWQ.pdf
DMTH4008LFDFWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 11.6A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4295 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.82 EUR
19+1.13 EUR
100+0.74 EUR
500+0.57 EUR
1000+0.51 EUR
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DMTH43M8LFGQ-13 DMTH43M8LFGQ.pdf
DMTH43M8LFGQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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DMTH43M8LFGQ-13 DMTH43M8LFGQ.pdf
DMTH43M8LFGQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.59 EUR
13+1.64 EUR
100+1.08 EUR
500+0.84 EUR
1000+0.77 EUR
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DMTH4008LPS-13 DMTH4008LPS.pdf
DMTH4008LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI5060
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMTH4008LPS-13 DMTH4008LPS.pdf
DMTH4008LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI5060
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
auf Bestellung 1872 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.95 EUR
18+1.2 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.55 EUR
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DMTH4008LFDFWQ-13 DMTH4008LFDFWQ.pdf
DMTH4008LFDFWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 11.6A 6UDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMTH4008LFDFWQ-13 DMTH4008LFDFWQ.pdf
DMTH4008LFDFWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 11.6A 6UDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4803 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.82 EUR
19+1.13 EUR
100+0.74 EUR
500+0.58 EUR
1000+0.5 EUR
2000+0.48 EUR
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DMTH4007SPDQ-13 DMTH4007SPDQ.pdf
DMTH4007SPDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 415000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.01 EUR
5000+0.96 EUR
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DMTH4007SPDQ-13 DMTH4007SPDQ.pdf
DMTH4007SPDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 415399 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.61 EUR
10+2.3 EUR
100+1.55 EUR
500+1.23 EUR
1000+1.13 EUR
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DMTH45M5LPDWQ-13 DMTH45M5LPDWQ.pdf
DMTH45M5LPDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 79A PWRDI50
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type UXD)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 60W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
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AnzahlPrivatkunde
2500+0.96 EUR
5000+0.92 EUR
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DMTH45M5LPDWQ-13 DMTH45M5LPDWQ.pdf
DMTH45M5LPDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 79A PWRDI50
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type UXD)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 60W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 7519 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.53 EUR
10+2.25 EUR
100+1.51 EUR
500+1.2 EUR
1000+1.12 EUR
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UF32F6204Z fcpdatasheet?file=UF%2FUF32F6204Z.pdf
Hersteller: Diodes Incorporated
Description: CRYSTAL OSCILLATOR SEAM3225 T&R
Base Resonator: Crystal
Frequency: 156.25 MHz
Part Status: Active
Height - Seated (Max): 0.041" (1.05mm)
Current - Supply (Max): 50mA
Voltage - Supply: 2.5V ~ 3.3V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVPECL
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Package / Case: 6-SMD, No Lead
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+6.26 EUR
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UF32F6204Z fcpdatasheet?file=UF%2FUF32F6204Z.pdf
Hersteller: Diodes Incorporated
Description: CRYSTAL OSCILLATOR SEAM3225 T&R
Base Resonator: Crystal
Frequency: 156.25 MHz
Part Status: Active
Height - Seated (Max): 0.041" (1.05mm)
Current - Supply (Max): 50mA
Voltage - Supply: 2.5V ~ 3.3V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVPECL
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Package / Case: 6-SMD, No Lead
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.53 EUR
10+9.02 EUR
50+8.52 EUR
100+8.02 EUR
500+7.77 EUR
1000+6.66 EUR
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APX809S00-26SA-7 APX809S-810S.pdf
APX809S00-26SA-7
Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: SOT-23-3
Voltage - Threshold: 2.63V
Reset Timeout: 1ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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