Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (73697) > Seite 577 nach 1229

Wählen Sie Seite:   [  << Vorherige Seite ]  1 122 244 366 488 572 573 574 575 576 577 578 579 580 581 582 610 732 854 976 1098 1220 1229  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
FK2000050 FK2000050 Diodes Incorporated FK-1-8V.pdf Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Type: XO (Standard)
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Base Resonator: Crystal
auf Bestellung 2142 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.56 EUR
10+2.24 EUR
25+2.12 EUR
50+2.02 EUR
100+1.94 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PAM2325AGPADJ PAM2325AGPADJ Diodes Incorporated PAM2325.pdf Description: IC REG BUCK ADJ 3.5A 12QFN
Voltage - Output (Min/Fixed): 1V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 4V
Synchronous Rectifier: Yes
Supplier Device Package: 12-QFN (2x2)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 1.2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3.5A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 12-PowerWFQFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.75 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PAM2325AGPADJ PAM2325AGPADJ Diodes Incorporated PAM2325.pdf Description: IC REG BUCK ADJ 3.5A 12QFN
Voltage - Output (Min/Fixed): 1V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 4V
Synchronous Rectifier: Yes
Supplier Device Package: 12-QFN (2x2)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 1.2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3.5A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 12-PowerWFQFN
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.76 EUR
14+1.57 EUR
25+1.49 EUR
100+1.23 EUR
250+1.14 EUR
500+1.01 EUR
1000+0.8 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FW384WFIN1 FW384WFIN1 Diodes Incorporated FW.pdf Description: CRYSTAL 38.4000MHZ 7PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 90°C
Frequency Stability: ±12ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.022" (0.55mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 38.4 MHz
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.64 EUR
6000+0.62 EUR
9000+0.6 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FW384WFIN1 FW384WFIN1 Diodes Incorporated FW.pdf Description: CRYSTAL 38.4000MHZ 7PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 90°C
Frequency Stability: ±12ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.022" (0.55mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 38.4 MHz
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.34 EUR
19+1.15 EUR
50+1.05 EUR
100+1 EUR
500+0.9 EUR
1000+0.86 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMTH4M95SPSQ-13-01 Diodes Incorporated Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN3009LFV-7 DMN3009LFV-7 Diodes Incorporated DMN3009LFV.pdf Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
auf Bestellung 26000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.33 EUR
4000+0.3 EUR
6000+0.27 EUR
10000+0.26 EUR
20000+0.25 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN3009LFV-7 DMN3009LFV-7 Diodes Incorporated DMN3009LFV.pdf Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
auf Bestellung 26042 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.05 EUR
27+0.79 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SB190-T SB190-T Diodes Incorporated ds30116.pdf Description: DIODE SCHOTTKY 90V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.21 EUR
10000+0.19 EUR
15000+0.18 EUR
25000+0.17 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SB190-T SB190-T Diodes Incorporated ds30116.pdf Description: DIODE SCHOTTKY 90V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
auf Bestellung 44489 Stücke:
Lieferzeit 10-14 Tag (e)
21+1 EUR
34+0.62 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.26 EUR
2000+0.24 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MMBD3004S-13-F MMBD3004S-13-F Diodes Incorporated Description: DIODE ARRAY GP 300V 225MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.069 EUR
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MMBD3004S-13-F MMBD3004S-13-F Diodes Incorporated Description: DIODE ARRAY GP 300V 225MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.55 EUR
58+0.37 EUR
118+0.18 EUR
500+0.14 EUR
1000+0.1 EUR
2000+0.089 EUR
5000+0.083 EUR
Mindestbestellmenge: 39 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ES2GA_HF ES2GA_HF Diodes Incorporated ES2DA-ES2JA_LS.pdf Description: DIODE STANDARD 400V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TT10M_HF TT10M_HF Diodes Incorporated TT10M.pdf Description: BRIDGE RECT 1PHASE 1KV 10A TTL
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: TTL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TT10M_HF TT10M_HF Diodes Incorporated TT10M.pdf Description: BRIDGE RECT 1PHASE 1KV 10A TTL
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: TTL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 349 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.95 EUR
18+1.2 EUR
25+1.01 EUR
50+0.89 EUR
100+0.79 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TT10M-13 TT10M-13 Diodes Incorporated TT10M.pdf Description: MEDIUM/HIGH POWER BRIDGE TTL T&R
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: TTL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TT10M-13 TT10M-13 Diodes Incorporated TT10M.pdf Description: MEDIUM/HIGH POWER BRIDGE TTL T&R
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: TTL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 745 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.32 EUR
24+0.89 EUR
100+0.61 EUR
500+0.49 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ7.5AQ-13-F SMBJ7.5AQ-13-F Diodes Incorporated ds40740.pdf Description: TVS DIODE 7.5VWM 13.6VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
74HC05S14-13 74HC05S14-13 Diodes Incorporated 74HC05.pdf Description: IC INV 6-CIR 1-IN 14-SO
Packaging: Tape & Reel (TR)
Features: Open Drain
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: -, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SO
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 20 µA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
74HC05S14-13 74HC05S14-13 Diodes Incorporated 74HC05.pdf Description: IC INV 6-CIR 1-IN 14-SO
Packaging: Cut Tape (CT)
Features: Open Drain
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: -, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SO
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 20 µA
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.5 EUR
61+0.35 EUR
69+0.31 EUR
75+0.29 EUR
100+0.26 EUR
Mindestbestellmenge: 42 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
B350BQ-13-F B350BQ-13-F Diodes Incorporated B340BQ-B360BQ.pdf Description: DIODE SCHOTTKY 50V 3A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SB350-B SB350-B Diodes Incorporated SB320-360.pdf Description: DIODE SCHOTTKY 50V 3A DO201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B350BE-13 B350BE-13 Diodes Incorporated B350%28B%2CC%29E%2C%20B360%28B%2CC%29E.pdf Description: DIODE SCHOTTKY 50V 3A SMB
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
B350B-13-F-2477 B350B-13-F-2477 Diodes Incorporated Description: DIODE
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B350AQ-13-F B350AQ-13-F Diodes Incorporated B320AQ-B360AQ.pdf Description: DIODE SCHOTTKY 50V 3A SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
B350AQ-13-F B350AQ-13-F Diodes Incorporated B320AQ-B360AQ.pdf Description: DIODE SCHOTTKY 50V 3A SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 4927 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.75 EUR
44+0.49 EUR
100+0.32 EUR
500+0.26 EUR
1000+0.23 EUR
2000+0.21 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4023SK3-13 DMPH4023SK3-13 Diodes Incorporated DMPH4023SK3.pdf Description: MOSFET P-CH 40V 50A TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.61 EUR
5000+0.56 EUR
7500+0.54 EUR
12500+0.51 EUR
17500+0.5 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4023SK3-13 DMPH4023SK3-13 Diodes Incorporated DMPH4023SK3.pdf Description: MOSFET P-CH 40V 50A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 22529 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.37 EUR
15+1.48 EUR
100+0.98 EUR
500+0.76 EUR
1000+0.69 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4025SFVWQ-13 DMPH4025SFVWQ-13 Diodes Incorporated DMPH4025SFVWQ.pdf Description: MOSFET P-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 30A, 10V
Power Dissipation (Max): 2.3W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1918 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.75 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4025SFVWQ-13 DMPH4025SFVWQ-13 Diodes Incorporated DMPH4025SFVWQ.pdf Description: MOSFET P-CH 40V PWRDI3333
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1918 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 3133 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.89 EUR
12+1.82 EUR
100+1.21 EUR
500+0.95 EUR
1000+0.86 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4015SK3-13 DMPH4015SK3-13 Diodes Incorporated DMPH4015SK3.PDF Description: MOSFET P-CHANNEL 40V 45A TO252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4015SK3-13 DMPH4015SK3-13 Diodes Incorporated DMPH4015SK3.PDF Description: MOSFET P-CHANNEL 40V 45A TO252
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2427 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.12 EUR
11+1.96 EUR
100+1.31 EUR
500+1.04 EUR
1000+0.94 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4026SFVW-7 DMPH4026SFVW-7 Diodes Incorporated DMPH4026SFVW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2W (Ta)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4026SFVW-13 DMPH4026SFVW-13 Diodes Incorporated DMPH4026SFVW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 52A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4026SFVWQ-13 DMPH4026SFVWQ-13 Diodes Incorporated DMPH4026SFVWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 52A (Tc)
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4026SFVWQ-7 DMPH4026SFVWQ-7 Diodes Incorporated DMPH4026SFVWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 52A (Tc)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4016SPSW-13 DMPH4016SPSW-13 Diodes Incorporated DMPH4016SPSW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Power Dissipation (Max): 4.6W (Ta), 143W (Tc)
Current - Continuous Drain (Id) @ 25°C: 90.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4009SPSW-13 DMPH4009SPSW-13 Diodes Incorporated DMPH4009SPSW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Power Dissipation (Max): 4.6W (Ta), 143W (Tc)
Current - Continuous Drain (Id) @ 25°C: 83.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4016SSS-13 DMPH4016SSS-13 Diodes Incorporated DMPH4016SSS.pdf Description: MOSFET BVDSS: 31V~40V SO-8 T&R 2
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4009SSS-13 DMPH4009SSS-13 Diodes Incorporated DMPH4009SSS.pdf Description: MOSFET BVDSS: 31V~40V SO-8 T&R 2
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4016SSSQ-13 DMPH4016SSSQ-13 Diodes Incorporated DMPH4016SSSQ.pdf Description: MOSFET BVDSS: 31V~40V SO-8 T&R 2
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4009SSSQ-13 Diodes Incorporated DMPH4009SSSQ.pdf Description: MOSFET BVDSS: 31V~40V SO-8 T&R 2
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.89 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4016SPSWQ-13 DMPH4016SPSWQ-13 Diodes Incorporated DMPH4016SPSWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Power Dissipation (Max): 4.6W (Ta), 143W (Tc)
Current - Continuous Drain (Id) @ 25°C: 90.7A (Tc)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4009SPSWQ-13 Diodes Incorporated DMPH4009SPSWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.92 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4023SPDWQ-13 Diodes Incorporated Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4013SPSWQ-13 Diodes Incorporated Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C7V5TQ-7-F BZT52C7V5TQ-7-F Diodes Incorporated ds30502.pdf Description: DIODE ZENER 7.5V 300MW SOD523
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.055 EUR
6000+0.052 EUR
9000+0.049 EUR
15000+0.046 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C7V5TQ-7-F BZT52C7V5TQ-7-F Diodes Incorporated ds30502.pdf Description: DIODE ZENER 7.5V 300MW SOD523
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
auf Bestellung 50980 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.27 EUR
112+0.19 EUR
237+0.088 EUR
1000+0.087 EUR
Mindestbestellmenge: 77 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C7V5Q-7-F BZT52C7V5Q-7-F Diodes Incorporated ds18004.pdf Description: DIODE ZENER 7.5V 370MW SOD123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
auf Bestellung 378000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.055 EUR
6000+0.048 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SBR1045SP5Q-13 SBR1045SP5Q-13 Diodes Incorporated SBR1045SP5.pdf Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Qualification: AEC-Q101
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.64 EUR
10000+0.62 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SBR1045SP5Q-13 SBR1045SP5Q-13 Diodes Incorporated SBR1045SP5.pdf Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Qualification: AEC-Q101
auf Bestellung 124870 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.68 EUR
16+1.32 EUR
100+1.12 EUR
500+0.88 EUR
1000+0.8 EUR
2000+0.76 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PT8A2803ZEEX PT8A2803ZEEX Diodes Incorporated PT8A2803.pdf Description: IC BATT CHG LI-ION 1CELL 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 8-TDFN (2x3)
Charge Current - Max: 500mA
Voltage - Supply (Max): 5.5V
Battery Pack Voltage: 4.2V
Current - Charging: Constant - Programmable
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMDT2907VQ-7 MMDT2907VQ-7 Diodes Incorporated MMDT2907VQ.pdf Description: TRANS 2PNP 60V 600MA SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1473995 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.9 EUR
38+0.56 EUR
100+0.36 EUR
500+0.26 EUR
1000+0.24 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MMBD2004SW-7-F MMBD2004SW-7-F Diodes Incorporated ds30443.pdf Description: DIODE ARRAY GP 240V 225MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
auf Bestellung 2022000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
21000+0.12 EUR
30000+0.12 EUR
75000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MMBD2004SW-7-F MMBD2004SW-7-F Diodes Incorporated ds30443.pdf Description: DIODE ARRAY GP 240V 225MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
auf Bestellung 2022480 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.57 EUR
55+0.38 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 38 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTC114EUAQ-7-F DDTC114EUAQ-7-F Diodes Incorporated ds30321.pdf Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP2021UTSQ-13 Diodes Incorporated DMP2021UTSQ.pdf Description: MOSFET BVDSS: 8V 24V TSSOP-8 T&R
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP2021UTSQ-13 Diodes Incorporated DMP2021UTSQ.pdf Description: MOSFET BVDSS: 8V 24V TSSOP-8 T&R
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.89 EUR
12+1.82 EUR
25+1.54 EUR
50+1.36 EUR
100+1.2 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1N5407G-T 1N5407G-T Diodes Incorporated ds29003.pdf Description: DIODE STANDARD 800V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 8400 Stücke:
Lieferzeit 10-14 Tag (e)
1200+0.27 EUR
3600+0.24 EUR
Mindestbestellmenge: 1200 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1N5407G-T 1N5407G-T Diodes Incorporated ds29003.pdf Description: DIODE STANDARD 800V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 9399 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.09 EUR
32+0.67 EUR
38+0.55 EUR
50+0.49 EUR
100+0.42 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FK2000050 FK-1-8V.pdf
FK2000050
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Type: XO (Standard)
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Base Resonator: Crystal
auf Bestellung 2142 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.56 EUR
10+2.24 EUR
25+2.12 EUR
50+2.02 EUR
100+1.94 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PAM2325AGPADJ PAM2325.pdf
PAM2325AGPADJ
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJ 3.5A 12QFN
Voltage - Output (Min/Fixed): 1V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 4V
Synchronous Rectifier: Yes
Supplier Device Package: 12-QFN (2x2)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 1.2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3.5A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 12-PowerWFQFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.75 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PAM2325AGPADJ PAM2325.pdf
PAM2325AGPADJ
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJ 3.5A 12QFN
Voltage - Output (Min/Fixed): 1V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 4V
Synchronous Rectifier: Yes
Supplier Device Package: 12-QFN (2x2)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 1.2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3.5A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 12-PowerWFQFN
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.76 EUR
14+1.57 EUR
25+1.49 EUR
100+1.23 EUR
250+1.14 EUR
500+1.01 EUR
1000+0.8 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FW384WFIN1 FW.pdf
FW384WFIN1
Hersteller: Diodes Incorporated
Description: CRYSTAL 38.4000MHZ 7PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 90°C
Frequency Stability: ±12ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.022" (0.55mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 38.4 MHz
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.64 EUR
6000+0.62 EUR
9000+0.6 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FW384WFIN1 FW.pdf
FW384WFIN1
Hersteller: Diodes Incorporated
Description: CRYSTAL 38.4000MHZ 7PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 90°C
Frequency Stability: ±12ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.022" (0.55mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 38.4 MHz
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.34 EUR
19+1.15 EUR
50+1.05 EUR
100+1 EUR
500+0.9 EUR
1000+0.86 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMTH4M95SPSQ-13-01
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN3009LFV-7 DMN3009LFV.pdf
DMN3009LFV-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
auf Bestellung 26000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+0.33 EUR
4000+0.3 EUR
6000+0.27 EUR
10000+0.26 EUR
20000+0.25 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN3009LFV-7 DMN3009LFV.pdf
DMN3009LFV-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
auf Bestellung 26042 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.05 EUR
27+0.79 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SB190-T ds30116.pdf
SB190-T
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.21 EUR
10000+0.19 EUR
15000+0.18 EUR
25000+0.17 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SB190-T ds30116.pdf
SB190-T
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
auf Bestellung 44489 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
34+0.62 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.26 EUR
2000+0.24 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MMBD3004S-13-F
MMBD3004S-13-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 300V 225MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.069 EUR
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MMBD3004S-13-F
MMBD3004S-13-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 300V 225MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
58+0.37 EUR
118+0.18 EUR
500+0.14 EUR
1000+0.1 EUR
2000+0.089 EUR
5000+0.083 EUR
Mindestbestellmenge: 39 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ES2GA_HF ES2DA-ES2JA_LS.pdf
ES2GA_HF
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 400V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TT10M_HF TT10M.pdf
TT10M_HF
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 10A TTL
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: TTL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TT10M_HF TT10M.pdf
TT10M_HF
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 10A TTL
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: TTL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 349 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.95 EUR
18+1.2 EUR
25+1.01 EUR
50+0.89 EUR
100+0.79 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TT10M-13 TT10M.pdf
TT10M-13
Hersteller: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE TTL T&R
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: TTL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TT10M-13 TT10M.pdf
TT10M-13
Hersteller: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE TTL T&R
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: TTL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 745 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.32 EUR
24+0.89 EUR
100+0.61 EUR
500+0.49 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ7.5AQ-13-F ds40740.pdf
SMBJ7.5AQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 7.5VWM 13.6VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
74HC05S14-13 74HC05.pdf
74HC05S14-13
Hersteller: Diodes Incorporated
Description: IC INV 6-CIR 1-IN 14-SO
Packaging: Tape & Reel (TR)
Features: Open Drain
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: -, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SO
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 20 µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
74HC05S14-13 74HC05.pdf
74HC05S14-13
Hersteller: Diodes Incorporated
Description: IC INV 6-CIR 1-IN 14-SO
Packaging: Cut Tape (CT)
Features: Open Drain
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: -, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SO
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 20 µA
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
42+0.5 EUR
61+0.35 EUR
69+0.31 EUR
75+0.29 EUR
100+0.26 EUR
Mindestbestellmenge: 42 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
B350BQ-13-F B340BQ-B360BQ.pdf
B350BQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 3A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SB350-B SB320-360.pdf
SB350-B
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 3A DO201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B350BE-13 B350%28B%2CC%29E%2C%20B360%28B%2CC%29E.pdf
B350BE-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 3A SMB
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
B350B-13-F-2477
B350B-13-F-2477
Hersteller: Diodes Incorporated
Description: DIODE
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B350AQ-13-F B320AQ-B360AQ.pdf
B350AQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 3A SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
B350AQ-13-F B320AQ-B360AQ.pdf
B350AQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 3A SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 4927 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.75 EUR
44+0.49 EUR
100+0.32 EUR
500+0.26 EUR
1000+0.23 EUR
2000+0.21 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4023SK3-13 DMPH4023SK3.pdf
DMPH4023SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 50A TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.61 EUR
5000+0.56 EUR
7500+0.54 EUR
12500+0.51 EUR
17500+0.5 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4023SK3-13 DMPH4023SK3.pdf
DMPH4023SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 50A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 22529 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.37 EUR
15+1.48 EUR
100+0.98 EUR
500+0.76 EUR
1000+0.69 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4025SFVWQ-13 DMPH4025SFVWQ.pdf
DMPH4025SFVWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 30A, 10V
Power Dissipation (Max): 2.3W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1918 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.75 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4025SFVWQ-13 DMPH4025SFVWQ.pdf
DMPH4025SFVWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V PWRDI3333
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1918 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 3133 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.89 EUR
12+1.82 EUR
100+1.21 EUR
500+0.95 EUR
1000+0.86 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4015SK3-13 DMPH4015SK3.PDF
DMPH4015SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CHANNEL 40V 45A TO252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4015SK3-13 DMPH4015SK3.PDF
DMPH4015SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CHANNEL 40V 45A TO252
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2427 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.12 EUR
11+1.96 EUR
100+1.31 EUR
500+1.04 EUR
1000+0.94 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4026SFVW-7 DMPH4026SFVW.pdf
DMPH4026SFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2W (Ta)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4026SFVW-13 DMPH4026SFVW.pdf
DMPH4026SFVW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 52A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4026SFVWQ-13 DMPH4026SFVWQ.pdf
DMPH4026SFVWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 52A (Tc)
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4026SFVWQ-7 DMPH4026SFVWQ.pdf
DMPH4026SFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 52A (Tc)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4016SPSW-13 DMPH4016SPSW.pdf
DMPH4016SPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Power Dissipation (Max): 4.6W (Ta), 143W (Tc)
Current - Continuous Drain (Id) @ 25°C: 90.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4009SPSW-13 DMPH4009SPSW.pdf
DMPH4009SPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Power Dissipation (Max): 4.6W (Ta), 143W (Tc)
Current - Continuous Drain (Id) @ 25°C: 83.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4016SSS-13 DMPH4016SSS.pdf
DMPH4016SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V SO-8 T&R 2
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4009SSS-13 DMPH4009SSS.pdf
DMPH4009SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V SO-8 T&R 2
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4016SSSQ-13 DMPH4016SSSQ.pdf
DMPH4016SSSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V SO-8 T&R 2
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4009SSSQ-13 DMPH4009SSSQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V SO-8 T&R 2
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.89 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4016SPSWQ-13 DMPH4016SPSWQ.pdf
DMPH4016SPSWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Power Dissipation (Max): 4.6W (Ta), 143W (Tc)
Current - Continuous Drain (Id) @ 25°C: 90.7A (Tc)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4009SPSWQ-13 DMPH4009SPSWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.92 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4023SPDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4013SPSWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C7V5TQ-7-F ds30502.pdf
BZT52C7V5TQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 7.5V 300MW SOD523
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.055 EUR
6000+0.052 EUR
9000+0.049 EUR
15000+0.046 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C7V5TQ-7-F ds30502.pdf
BZT52C7V5TQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 7.5V 300MW SOD523
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
auf Bestellung 50980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
77+0.27 EUR
112+0.19 EUR
237+0.088 EUR
1000+0.087 EUR
Mindestbestellmenge: 77 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C7V5Q-7-F ds18004.pdf
BZT52C7V5Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 7.5V 370MW SOD123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
auf Bestellung 378000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.055 EUR
6000+0.048 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SBR1045SP5Q-13 SBR1045SP5.pdf
SBR1045SP5Q-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Qualification: AEC-Q101
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.64 EUR
10000+0.62 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SBR1045SP5Q-13 SBR1045SP5.pdf
SBR1045SP5Q-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Qualification: AEC-Q101
auf Bestellung 124870 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.68 EUR
16+1.32 EUR
100+1.12 EUR
500+0.88 EUR
1000+0.8 EUR
2000+0.76 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PT8A2803ZEEX PT8A2803.pdf
PT8A2803ZEEX
Hersteller: Diodes Incorporated
Description: IC BATT CHG LI-ION 1CELL 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 8-TDFN (2x3)
Charge Current - Max: 500mA
Voltage - Supply (Max): 5.5V
Battery Pack Voltage: 4.2V
Current - Charging: Constant - Programmable
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMDT2907VQ-7 MMDT2907VQ.pdf
MMDT2907VQ-7
Hersteller: Diodes Incorporated
Description: TRANS 2PNP 60V 600MA SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1473995 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.9 EUR
38+0.56 EUR
100+0.36 EUR
500+0.26 EUR
1000+0.24 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MMBD2004SW-7-F ds30443.pdf
MMBD2004SW-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 240V 225MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
auf Bestellung 2022000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
21000+0.12 EUR
30000+0.12 EUR
75000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MMBD2004SW-7-F ds30443.pdf
MMBD2004SW-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 240V 225MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
auf Bestellung 2022480 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
38+0.57 EUR
55+0.38 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 38 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTC114EUAQ-7-F ds30321.pdf
DDTC114EUAQ-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP2021UTSQ-13 DMP2021UTSQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V 24V TSSOP-8 T&R
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP2021UTSQ-13 DMP2021UTSQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V 24V TSSOP-8 T&R
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.89 EUR
12+1.82 EUR
25+1.54 EUR
50+1.36 EUR
100+1.2 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1N5407G-T ds29003.pdf
1N5407G-T
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 800V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 8400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1200+0.27 EUR
3600+0.24 EUR
Mindestbestellmenge: 1200 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1N5407G-T ds29003.pdf
1N5407G-T
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 800V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 9399 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.09 EUR
32+0.67 EUR
38+0.55 EUR
50+0.49 EUR
100+0.42 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 122 244 366 488 572 573 574 575 576 577 578 579 580 581 582 610 732 854 976 1098 1220 1229  [ Nächste Seite >> ]