Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74798) > Seite 632 nach 1247
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FW2500034Z | Diodes Incorporated |
Description: CRYSTAL 25.0000MHZ 10PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 10pF Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -20°C ~ 70°C Frequency Stability: ±10ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Height - Seated (Max): 0.022" (0.55mm) ESR (Equivalent Series Resistance): 100 Ohms Frequency: 25 MHz |
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FL1600181Q | Diodes Incorporated |
Description: CRYSTAL 16.0000MHZ 8PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 8pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 125°C Frequency Stability: ±40ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 80 Ohms Frequency: 16 MHz |
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FL1600185Q | Diodes Incorporated |
Description: CRYSTAL 16.0000MHZ 16PF SMD Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 16pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±20ppm Frequency Tolerance: ±20ppm Operating Mode: Fundamental Ratings: AEC-Q200 Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 50 Ohms Frequency: 16 MHz |
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FL1600189Q | Diodes Incorporated |
Description: CRYSTAL 16.0000MHZ 8PF SMD Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 8pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 105°C Frequency Stability: ±25ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Ratings: AEC-Q200 Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 80 Ohms Frequency: 16 MHz |
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FL2860023Q | Diodes Incorporated |
Description: CRYSTAL 28.6360MHZ 20PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 20pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±20ppm Frequency Tolerance: ±20ppm Operating Mode: Fundamental Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 60 Ohms Frequency: 28.636 MHz |
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GB2450031 | Diodes Incorporated |
Description: CRYSTAL 24.5760MHZ 20PFPackaging: Tape & Reel (TR) Load Capacitance: 20pF Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±30ppm Frequency Tolerance: ±30ppm Operating Mode: Fundamental ESR (Equivalent Series Resistance): 30 Ohms Frequency: 24.576 MHz |
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GC2450037 | Diodes Incorporated |
Description: CRYSTAL 24.5760MHZ 20PFPackaging: Tape & Reel (TR) Load Capacitance: 20pF Type: MHz Crystal Operating Temperature: -20°C ~ 70°C Frequency Stability: ±30ppm Frequency Tolerance: ±30ppm Operating Mode: Fundamental ESR (Equivalent Series Resistance): 30 Ohms Frequency: 24.576 MHz |
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FY2450034Q | Diodes Incorporated |
Description: CRYSTAL 24.5760MHZ 20PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 20pF Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±20ppm Frequency Tolerance: ±20ppm Operating Mode: Fundamental Height - Seated (Max): 0.043" (1.10mm) ESR (Equivalent Series Resistance): 60 Ohms Frequency: 24.576 MHz |
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74AUP2G04FZ4-7 | Diodes Incorporated |
Description: IC INVERTER 2CH 2-INP DFN1410-6Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 0.8V ~ 3.6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 2 Supplier Device Package: X2-DFN1410-6 Input Logic Level - High: 1.6V ~ 2V Input Logic Level - Low: 0.7V ~ 0.9V Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF Number of Circuits: 2 Current - Quiescent (Max): 500 nA |
auf Bestellung 110000 Stücke: Lieferzeit 10-14 Tag (e) |
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74AUP2G04FZ4-7 | Diodes Incorporated |
Description: IC INVERTER 2CH 2-INP DFN1410-6Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 0.8V ~ 3.6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 2 Supplier Device Package: X2-DFN1410-6 Input Logic Level - High: 1.6V ~ 2V Input Logic Level - Low: 0.7V ~ 0.9V Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF Number of Circuits: 2 Current - Quiescent (Max): 500 nA |
auf Bestellung 114244 Stücke: Lieferzeit 10-14 Tag (e) |
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| WX5031A0212.500000 | Diodes Incorporated |
Description: XTAL OSC XO 212.5000MHZ LVDS SMD Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Mounting Type: Surface Mount Output: LVDS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±20ppm Voltage - Supply: 3.3V Current - Supply (Max): 90mA Height - Seated (Max): 0.051" (1.30mm) Frequency: 212.5 MHz Base Resonator: Crystal |
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PR1006G-T | Diodes Incorporated |
Description: DIODE GEN PURP 800V 1A DO41Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
auf Bestellung 150000 Stücke: Lieferzeit 10-14 Tag (e) |
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PR1006G-T | Diodes Incorporated |
Description: DIODE GEN PURP 800V 1A DO41Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
auf Bestellung 150000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMSZ5225BQ-7-F | Diodes Incorporated |
Description: ZENER DIODE SOD123 T&R 3KTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 370 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 µA @ 1 V Qualification: AEC-Q101 |
auf Bestellung 78000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMSZ5225B-7 | Diodes Incorporated |
Description: DIODE ZENER 3V 500MW SOD123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 370 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 µA @ 1 V Qualification: AEC-Q101 |
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DRTR5V0U2SO-7 | Diodes Incorporated |
Description: GENERAL PROTECTION PP SOT26 T&R Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 1pF @ 1MHz Current - Peak Pulse (10/1000µs): 6A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SOT-26 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 19V Power Line Protection: Yes |
auf Bestellung 104990 Stücke: Lieferzeit 10-14 Tag (e) |
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| LX11240001 | Diodes Incorporated |
Description: XTAL OSC SO 24.0000MHZ CMOS SMD Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: SO (SAW) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1V Current - Supply (Max): 2.5mA Height - Seated (Max): 0.030" (0.75mm) Frequency: 24 MHz Base Resonator: Crystal |
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DDZ10B-7 | Diodes Incorporated |
Description: DIODE ZENER 9.66V 470MW SOD123Tolerance: ±3% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 9.66 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: SOD-123 Power - Max: 470 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V |
auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDZ10B-7 | Diodes Incorporated |
Description: DIODE ZENER 9.66V 470MW SOD123Tolerance: ±3% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 9.66 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: SOD-123 Power - Max: 470 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V |
auf Bestellung 41475 Stücke: Lieferzeit 10-14 Tag (e) |
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UDZ10B-7 | Diodes Incorporated |
Description: DIODE ZENER 9.99V 200MW SOD323Tolerance: ±2.2% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 9.99 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOD-323 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 7 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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UDZ10B-7 | Diodes Incorporated |
Description: DIODE ZENER 9.99V 200MW SOD323Tolerance: ±2.2% Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 9.99 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOD-323 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 7 V |
auf Bestellung 4132 Stücke: Lieferzeit 10-14 Tag (e) |
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| WT25260004 | Diodes Incorporated |
Description: TEMP COMP XO SEAM2520 T&R 3K Packaging: Tape & Reel (TR) Type: XO (Standard) Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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| JT25260005 | Diodes Incorporated |
Description: XO TEMP COMP SEAM2520 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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| JT25260003 | Diodes Incorporated |
Description: XO TEMP COMP SEAM2520 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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DDZX33-7 | Diodes Incorporated |
Description: DIODE ZENER 33V 300MW SOT23-3Tolerance: ±3% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: SOT-23-3 Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 27 V |
auf Bestellung 141000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDZX33-7 | Diodes Incorporated |
Description: DIODE ZENER 33V 300MW SOT23-3Tolerance: ±3% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: SOT-23-3 Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 27 V |
auf Bestellung 141000 Stücke: Lieferzeit 10-14 Tag (e) |
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MUR140-T | Diodes Incorporated |
Description: DIODE STANDARD 400V 1A DO41Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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MUR140-T | Diodes Incorporated |
Description: DIODE STANDARD 400V 1A DO41Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 49390 Stücke: Lieferzeit 10-14 Tag (e) |
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ZLDO1117QG50TA | Diodes Incorporated |
Description: LDO BJT HICURR SOT223 T&R 1KPackaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 18V Number of Regulators: 1 Supplier Device Package: SOT-223-3 Voltage - Output (Min/Fixed): 5V Grade: Automotive PSRR: 80dB (120Hz) Voltage Dropout (Max): 1.35V @ 1A Protection Features: Over Current, Over Temperature, Short Circuit Qualification: AEC-Q100 |
auf Bestellung 2020535 Stücke: Lieferzeit 10-14 Tag (e) |
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ZLDO1117QGTA | Diodes Incorporated |
Description: LDO BJT HICURR SOT223 T&R 1KPackaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 5 mA Voltage - Input (Max): 18V Number of Regulators: 1 Supplier Device Package: SOT-223-3 Voltage - Output (Max): 16.65V Voltage - Output (Min/Fixed): 1.25V Grade: Automotive PSRR: 80dB (120Hz) Voltage Dropout (Max): 1.35V @ 1A Protection Features: Over Current, Over Temperature, Short Circuit Qualification: AEC-Q100 |
auf Bestellung 995 Stücke: Lieferzeit 10-14 Tag (e) |
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AL8841QWT-7 | Diodes Incorporated |
Description: LED MV INT SWITCH TSOT25 T&R 3KPackaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 125°C (TA) Applications: Automotive Current - Output / Channel: 1A Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: TSOT-25 Dimming: Analog, PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 40V Grade: Automotive Qualification: AEC-Q100 Voltage - Output: 40V (Switch) |
Produkt ist nicht verfügbar |
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AL8841QWT-7 | Diodes Incorporated |
Description: LED MV INT SWITCH TSOT25 T&R 3KPackaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 125°C (TA) Applications: Automotive Current - Output / Channel: 1A Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: TSOT-25 Dimming: Analog, PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 40V Grade: Automotive Qualification: AEC-Q100 Voltage - Output: 40V (Switch) |
auf Bestellung 293 Stücke: Lieferzeit 10-14 Tag (e) |
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AL8841QMP-13 | Diodes Incorporated |
Description: LED MV INT SWITCH MSOP-8EP T&R 2Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 125°C (TA) Applications: Automotive Current - Output / Channel: 1.5A Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: 8-MSOP-EP Dimming: Analog, PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 40V Grade: Automotive Qualification: AEC-Q100 Voltage - Output: 40V (Switch) |
auf Bestellung 242500 Stücke: Lieferzeit 10-14 Tag (e) |
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AL8841QMP-13 | Diodes Incorporated |
Description: LED MV INT SWITCH MSOP-8EP T&R 2Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 125°C (TA) Applications: Automotive Current - Output / Channel: 1.5A Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: 8-MSOP-EP Dimming: Analog, PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 40V Grade: Automotive Qualification: AEC-Q100 Voltage - Output: 40V (Switch) |
auf Bestellung 244523 Stücke: Lieferzeit 10-14 Tag (e) |
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GC1430029 | Diodes Incorporated |
Description: CRYSTAL METAL CAN 49S/SMD T&R 1KPackaging: Tape & Reel (TR) Type: MHz Crystal Operating Mode: Fundamental |
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DMC62D2SV-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 60V 0.48A SOT563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Supplier Device Package: SOT-563 |
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DMC62D2SVQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V SOT563 T&RPackaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
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DMC62D2SV-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 60V 0.48A SOT563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Supplier Device Package: SOT-563 |
auf Bestellung 159000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC62D2SVQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V SOT563 T&RPackaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 147000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4M90LPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 356A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V Power Dissipation (Max): 4.2W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9308 pF @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DMTH4M90SPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 278A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V Power Dissipation (Max): 2.6W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9434 pF @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DMTH4M90SPSWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 278A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V Power Dissipation (Max): 2.6W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9434 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DMTH4M90LPSWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 356A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V Power Dissipation (Max): 4.2W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9308 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DMT4011LFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 30A POWERDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 15.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4011LFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 30A POWERDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 15.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 20896 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4014LDV-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 8.5A PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 26.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4014LDV-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 8.5A PWRDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 26.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4002LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 100A PWRDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V Power Dissipation (Max): 2.3W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 116.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6771 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 257500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4002LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 100A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V Power Dissipation (Max): 2.3W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 116.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6771 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 259780 Stücke: Lieferzeit 10-14 Tag (e) |
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DT1140-04LPQ-7 | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 10VC UDFN251010Packaging: Cut Tape (CT) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 85°C (TA) Applications: Ethernet, HDMI, USB Capacitance @ Frequency: 0.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 6A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: U-DFN2510-10 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 10V Power - Peak Pulse: 60W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 160666 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2014LHAB-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 9A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2016LHAB-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 7.5A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2016LHAB-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 7.5A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PI5A3157BCEX | Diodes Incorporated |
Description: ANALOG SWITCH 3V-5V SOT363 T&R 3Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 11Ohm -3db Bandwidth: 350MHz Supplier Device Package: SOT-363-6 (SC-70) Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 10pC Crosstalk: -64dB @ 10MHz Switch Circuit: SPDT - Open/Closed Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 5.2ns, 4.5ns Channel Capacitance (CS(off), CD(off)): 2.5pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 1 |
auf Bestellung 2505000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PI5A3157BXDBEX | Diodes Incorporated |
Description: ANALOG SWITCH 3V-5V X2-DFN1010-6Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 11Ohm -3db Bandwidth: 350MHz Supplier Device Package: 6-X1DFN (1x1) Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 10pC Crosstalk: -64dB @ 10MHz Switch Circuit: SPDT - Open/Closed Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 5.2ns, 4.5ns Channel Capacitance (CS(off), CD(off)): 2.5pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 1 |
auf Bestellung 160000 Stücke: Lieferzeit 10-14 Tag (e) |
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| 49SNC060-20-E | Diodes Incorporated |
Description: CRYSTAL METAL CAN SMD Packaging: Bulk Package / Case: HC-49/US Load Capacitance: 20pF Size / Dimension: 0.461" L x 0.189" W (11.70mm x 4.80mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -20°C ~ 70°C Frequency Stability: ±100ppm Frequency Tolerance: ±50ppm Operating Mode: Fundamental Height - Seated (Max): 0.205" (5.20mm) ESR (Equivalent Series Resistance): 200 Ohms Frequency: 6 MHz |
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FL5540001Q | Diodes Incorporated |
Description: CRYSTAL 55.4667MHZ 9PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 9pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±15ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 40 Ohms Frequency: 55.4667 MHz |
Produkt ist nicht verfügbar |
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PI6C5913004ZHIEX | Diodes Incorporated |
Description: IC CLK BUFFER 1:4 3GHZ 16TQFNPackaging: Tape & Reel (TR) Package / Case: 16-WFQFN Exposed Pad Number of Circuits: 1 Mounting Type: Surface Mount Output: LVPECL Type: Fanout Buffer (Distribution) Input: LVCMOS Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.375V ~ 3.6V Ratio - Input:Output: 1:4 Differential - Input:Output: Yes/Yes Supplier Device Package: 16-TQFN (3x3) Frequency - Max: 3 GHz |
Produkt ist nicht verfügbar |
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PI6C5913004ZHIEX | Diodes Incorporated |
Description: IC CLK BUFFER 1:4 3GHZ 16TQFNPackaging: Cut Tape (CT) Package / Case: 16-WFQFN Exposed Pad Number of Circuits: 1 Mounting Type: Surface Mount Output: LVPECL Type: Fanout Buffer (Distribution) Input: LVCMOS Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.375V ~ 3.6V Ratio - Input:Output: 1:4 Differential - Input:Output: Yes/Yes Supplier Device Package: 16-TQFN (3x3) Frequency - Max: 3 GHz |
auf Bestellung 80 Stücke: Lieferzeit 10-14 Tag (e) |
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G8327A045 | Diodes Incorporated |
Description: CRYSTAL 32.768KHZ SMDPackaging: Tape & Reel (TR) |
auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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| FW2500034Z |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.022" (0.55mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 25 MHz
Description: CRYSTAL 25.0000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.022" (0.55mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 25 MHz
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| FL1600181Q |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 16.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±40ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 16 MHz
Description: CRYSTAL 16.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±40ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 16 MHz
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| FL1600185Q |
Hersteller: Diodes Incorporated
Description: CRYSTAL 16.0000MHZ 16PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 16pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Ratings: AEC-Q200
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 50 Ohms
Frequency: 16 MHz
Description: CRYSTAL 16.0000MHZ 16PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 16pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Ratings: AEC-Q200
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 50 Ohms
Frequency: 16 MHz
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| FL1600189Q |
Hersteller: Diodes Incorporated
Description: CRYSTAL 16.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Ratings: AEC-Q200
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 16 MHz
Description: CRYSTAL 16.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Ratings: AEC-Q200
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 16 MHz
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| FL2860023Q |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 28.6360MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 28.636 MHz
Description: CRYSTAL 28.6360MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 28.636 MHz
Produkt ist nicht verfügbar
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| GB2450031 |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 24.5760MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 24.576 MHz
Description: CRYSTAL 24.5760MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 24.576 MHz
Produkt ist nicht verfügbar
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| GC2450037 |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 24.5760MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 24.576 MHz
Description: CRYSTAL 24.5760MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 24.576 MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FY2450034Q |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 24.5760MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.043" (1.10mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 24.576 MHz
Description: CRYSTAL 24.5760MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.043" (1.10mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 24.576 MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74AUP2G04FZ4-7 |
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Hersteller: Diodes Incorporated
Description: IC INVERTER 2CH 2-INP DFN1410-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1410-6
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Number of Circuits: 2
Current - Quiescent (Max): 500 nA
Description: IC INVERTER 2CH 2-INP DFN1410-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1410-6
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Number of Circuits: 2
Current - Quiescent (Max): 500 nA
auf Bestellung 110000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.15 EUR |
| 10000+ | 0.14 EUR |
| 74AUP2G04FZ4-7 |
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Hersteller: Diodes Incorporated
Description: IC INVERTER 2CH 2-INP DFN1410-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1410-6
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Number of Circuits: 2
Current - Quiescent (Max): 500 nA
Description: IC INVERTER 2CH 2-INP DFN1410-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1410-6
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Number of Circuits: 2
Current - Quiescent (Max): 500 nA
auf Bestellung 114244 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 0.37 EUR |
| 70+ | 0.25 EUR |
| 79+ | 0.22 EUR |
| 100+ | 0.19 EUR |
| 250+ | 0.18 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.16 EUR |
| 2500+ | 0.15 EUR |
| WX5031A0212.500000 |
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 212.5000MHZ LVDS SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 90mA
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 212.5 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 212.5000MHZ LVDS SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 90mA
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 212.5 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PR1006G-T |
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Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 800V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 150000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.14 EUR |
| 10000+ | 0.12 EUR |
| 50000+ | 0.095 EUR |
| 125000+ | 0.094 EUR |
| PR1006G-T |
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Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 800V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 150000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 0.79 EUR |
| 32+ | 0.55 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.17 EUR |
| 2000+ | 0.14 EUR |
| MMSZ5225BQ-7-F |
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Hersteller: Diodes Incorporated
Description: ZENER DIODE SOD123 T&R 3K
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
Description: ZENER DIODE SOD123 T&R 3K
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.058 EUR |
| 6000+ | 0.055 EUR |
| 9000+ | 0.047 EUR |
| 30000+ | 0.043 EUR |
| 75000+ | 0.038 EUR |
| MMSZ5225B-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 3V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DRTR5V0U2SO-7 |
Hersteller: Diodes Incorporated
Description: GENERAL PROTECTION PP SOT26 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-26
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 19V
Power Line Protection: Yes
Description: GENERAL PROTECTION PP SOT26 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-26
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 19V
Power Line Protection: Yes
auf Bestellung 104990 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 0.48 EUR |
| 56+ | 0.32 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
| LX11240001 |
Hersteller: Diodes Incorporated
Description: XTAL OSC SO 24.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: SO (SAW)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.030" (0.75mm)
Frequency: 24 MHz
Base Resonator: Crystal
Description: XTAL OSC SO 24.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: SO (SAW)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.030" (0.75mm)
Frequency: 24 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DDZ10B-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 9.66V 470MW SOD123
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.66 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Description: DIODE ZENER 9.66V 470MW SOD123
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.66 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.063 EUR |
| 6000+ | 0.053 EUR |
| 9000+ | 0.042 EUR |
| 15000+ | 0.038 EUR |
| 21000+ | 0.036 EUR |
| DDZ10B-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 9.66V 470MW SOD123
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.66 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Description: DIODE ZENER 9.66V 470MW SOD123
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.66 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 41475 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 84+ | 0.21 EUR |
| 121+ | 0.15 EUR |
| 249+ | 0.071 EUR |
| 500+ | 0.069 EUR |
| 1000+ | 0.068 EUR |
| UDZ10B-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 9.99V 200MW SOD323
Tolerance: ±2.2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.99 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
Description: DIODE ZENER 9.99V 200MW SOD323
Tolerance: ±2.2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.99 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.059 EUR |
| UDZ10B-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 9.99V 200MW SOD323
Tolerance: ±2.2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.99 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
Description: DIODE ZENER 9.99V 200MW SOD323
Tolerance: ±2.2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.99 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
auf Bestellung 4132 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 0.26 EUR |
| 94+ | 0.19 EUR |
| 195+ | 0.091 EUR |
| 500+ | 0.089 EUR |
| 1000+ | 0.088 EUR |
| WT25260004 |
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM2520 T&R 3K
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
Description: TEMP COMP XO SEAM2520 T&R 3K
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DDZX33-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 33V 300MW SOT23-3
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27 V
Description: DIODE ZENER 33V 300MW SOT23-3
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27 V
auf Bestellung 141000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.065 EUR |
| 6000+ | 0.06 EUR |
| 9000+ | 0.05 EUR |
| 30000+ | 0.049 EUR |
| 75000+ | 0.044 EUR |
| DDZX33-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 33V 300MW SOT23-3
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27 V
Description: DIODE ZENER 33V 300MW SOT23-3
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27 V
auf Bestellung 141000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 0.39 EUR |
| 67+ | 0.26 EUR |
| 137+ | 0.13 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.075 EUR |
| MUR140-T |
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Hersteller: Diodes Incorporated
Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.25 EUR |
| 10000+ | 0.24 EUR |
| 15000+ | 0.22 EUR |
| MUR140-T |
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Hersteller: Diodes Incorporated
Description: DIODE STANDARD 400V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 49390 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.93 EUR |
| 30+ | 0.59 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.32 EUR |
| 2000+ | 0.3 EUR |
| ZLDO1117QG50TA |
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Hersteller: Diodes Incorporated
Description: LDO BJT HICURR SOT223 T&R 1K
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 1.35V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
Description: LDO BJT HICURR SOT223 T&R 1K
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 1.35V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
auf Bestellung 2020535 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.74 EUR |
| 17+ | 1.08 EUR |
| 25+ | 0.91 EUR |
| 100+ | 0.71 EUR |
| 250+ | 0.61 EUR |
| 500+ | 0.56 EUR |
| ZLDO1117QGTA |
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Hersteller: Diodes Incorporated
Description: LDO BJT HICURR SOT223 T&R 1K
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Max): 16.65V
Voltage - Output (Min/Fixed): 1.25V
Grade: Automotive
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 1.35V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
Description: LDO BJT HICURR SOT223 T&R 1K
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Max): 16.65V
Voltage - Output (Min/Fixed): 1.25V
Grade: Automotive
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 1.35V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
auf Bestellung 995 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.04 EUR |
| 20+ | 0.91 EUR |
| 25+ | 0.85 EUR |
| 100+ | 0.7 EUR |
| 250+ | 0.65 EUR |
| 500+ | 0.55 EUR |
| AL8841QWT-7 |
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Hersteller: Diodes Incorporated
Description: LED MV INT SWITCH TSOT25 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Automotive
Current - Output / Channel: 1A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TSOT-25
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q100
Voltage - Output: 40V (Switch)
Description: LED MV INT SWITCH TSOT25 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Automotive
Current - Output / Channel: 1A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TSOT-25
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q100
Voltage - Output: 40V (Switch)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AL8841QWT-7 |
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Hersteller: Diodes Incorporated
Description: LED MV INT SWITCH TSOT25 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Automotive
Current - Output / Channel: 1A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TSOT-25
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q100
Voltage - Output: 40V (Switch)
Description: LED MV INT SWITCH TSOT25 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Automotive
Current - Output / Channel: 1A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TSOT-25
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q100
Voltage - Output: 40V (Switch)
auf Bestellung 293 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 0.67 EUR |
| 38+ | 0.47 EUR |
| 43+ | 0.42 EUR |
| 100+ | 0.36 EUR |
| 250+ | 0.34 EUR |
| AL8841QMP-13 |
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Hersteller: Diodes Incorporated
Description: LED MV INT SWITCH MSOP-8EP T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Automotive
Current - Output / Channel: 1.5A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-MSOP-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q100
Voltage - Output: 40V (Switch)
Description: LED MV INT SWITCH MSOP-8EP T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Automotive
Current - Output / Channel: 1.5A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-MSOP-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q100
Voltage - Output: 40V (Switch)
auf Bestellung 242500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.35 EUR |
| 5000+ | 0.34 EUR |
| 12500+ | 0.33 EUR |
| AL8841QMP-13 |
![]() |
Hersteller: Diodes Incorporated
Description: LED MV INT SWITCH MSOP-8EP T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Automotive
Current - Output / Channel: 1.5A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-MSOP-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q100
Voltage - Output: 40V (Switch)
Description: LED MV INT SWITCH MSOP-8EP T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Automotive
Current - Output / Channel: 1.5A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-MSOP-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q100
Voltage - Output: 40V (Switch)
auf Bestellung 244523 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 0.79 EUR |
| 32+ | 0.56 EUR |
| 36+ | 0.5 EUR |
| 100+ | 0.44 EUR |
| 250+ | 0.4 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.37 EUR |
| GC1430029 |
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Hersteller: Diodes Incorporated
Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMC62D2SV-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V 0.48A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET N/P-CH 60V 0.48A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMC62D2SVQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT563 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET BVDSS: 41V~60V SOT563 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMC62D2SV-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V 0.48A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET N/P-CH 60V 0.48A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 159000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.11 EUR |
| 9000+ | 0.095 EUR |
| 30000+ | 0.093 EUR |
| 75000+ | 0.077 EUR |
| 150000+ | 0.076 EUR |
| DMC62D2SVQ-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT563 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET BVDSS: 41V~60V SOT563 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 147000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.13 EUR |
| 6000+ | 0.12 EUR |
| 15000+ | 0.11 EUR |
| 30000+ | 0.1 EUR |
| 75000+ | 0.089 EUR |
| DMTH4M90LPSW-13 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 356A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V
Power Dissipation (Max): 4.2W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9308 pF @ 20 V
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 356A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V
Power Dissipation (Max): 4.2W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9308 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMTH4M90SPSW-13 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 278A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9434 pF @ 20 V
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 278A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9434 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMTH4M90SPSWQ-13 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 278A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9434 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 278A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9434 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMTH4M90LPSWQ-13 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 356A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V
Power Dissipation (Max): 4.2W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9308 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 356A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V
Power Dissipation (Max): 4.2W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9308 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT4011LFG-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.3 EUR |
| 6000+ | 0.26 EUR |
| 9000+ | 0.25 EUR |
| DMT4011LFG-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 30A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 30A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 20896 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.23 EUR |
| 23+ | 0.77 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.34 EUR |
| DMT4014LDV-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 8.5A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 26.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Description: MOSFET 2N-CH 40V 8.5A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 26.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 0.5 EUR |
| DMT4014LDV-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 8.5A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 26.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Description: MOSFET 2N-CH 40V 8.5A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 26.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.62 EUR |
| 15+ | 1.21 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.57 EUR |
| DMT4002LPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6771 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6771 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 257500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.95 EUR |
| 5000+ | 0.91 EUR |
| DMT4002LPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6771 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6771 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 259780 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.31 EUR |
| 10+ | 2.12 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.05 EUR |
| DT1140-04LPQ-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 10VC UDFN251010
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 85°C (TA)
Applications: Ethernet, HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: U-DFN2510-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 60W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.5VWM 10VC UDFN251010
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 85°C (TA)
Applications: Ethernet, HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: U-DFN2510-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 60W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 160666 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 0.51 EUR |
| 51+ | 0.35 EUR |
| 105+ | 0.17 EUR |
| 1000+ | 0.16 EUR |
| DMN2014LHAB-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 9A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
Description: MOSFET 2N-CH 20V 9A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.97 EUR |
| 28+ | 0.65 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.32 EUR |
| 2000+ | 0.29 EUR |
| 5000+ | 0.26 EUR |
| DMN2016LHAB-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 7.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
Description: MOSFET 2N-CH 20V 7.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.3 EUR |
| DMN2016LHAB-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 7.5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
Description: MOSFET 2N-CH 20V 7.5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 1.13 EUR |
| 24+ | 0.76 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.37 EUR |
| PI5A3157BCEX |
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Hersteller: Diodes Incorporated
Description: ANALOG SWITCH 3V-5V SOT363 T&R 3
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 11Ohm
-3db Bandwidth: 350MHz
Supplier Device Package: SOT-363-6 (SC-70)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 10pC
Crosstalk: -64dB @ 10MHz
Switch Circuit: SPDT - Open/Closed
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 2.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Description: ANALOG SWITCH 3V-5V SOT363 T&R 3
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 11Ohm
-3db Bandwidth: 350MHz
Supplier Device Package: SOT-363-6 (SC-70)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 10pC
Crosstalk: -64dB @ 10MHz
Switch Circuit: SPDT - Open/Closed
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 2.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
auf Bestellung 2505000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.093 EUR |
| 6000+ | 0.09 EUR |
| 9000+ | 0.088 EUR |
| 15000+ | 0.087 EUR |
| 21000+ | 0.086 EUR |
| 30000+ | 0.085 EUR |
| 75000+ | 0.083 EUR |
| 150000+ | 0.081 EUR |
| PI5A3157BXDBEX |
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Hersteller: Diodes Incorporated
Description: ANALOG SWITCH 3V-5V X2-DFN1010-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 11Ohm
-3db Bandwidth: 350MHz
Supplier Device Package: 6-X1DFN (1x1)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 10pC
Crosstalk: -64dB @ 10MHz
Switch Circuit: SPDT - Open/Closed
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 2.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Description: ANALOG SWITCH 3V-5V X2-DFN1010-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 11Ohm
-3db Bandwidth: 350MHz
Supplier Device Package: 6-X1DFN (1x1)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 10pC
Crosstalk: -64dB @ 10MHz
Switch Circuit: SPDT - Open/Closed
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 2.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
auf Bestellung 160000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.12 EUR |
| 10000+ | 0.11 EUR |
| 49SNC060-20-E |
Hersteller: Diodes Incorporated
Description: CRYSTAL METAL CAN SMD
Packaging: Bulk
Package / Case: HC-49/US
Load Capacitance: 20pF
Size / Dimension: 0.461" L x 0.189" W (11.70mm x 4.80mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±100ppm
Frequency Tolerance: ±50ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.205" (5.20mm)
ESR (Equivalent Series Resistance): 200 Ohms
Frequency: 6 MHz
Description: CRYSTAL METAL CAN SMD
Packaging: Bulk
Package / Case: HC-49/US
Load Capacitance: 20pF
Size / Dimension: 0.461" L x 0.189" W (11.70mm x 4.80mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±100ppm
Frequency Tolerance: ±50ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.205" (5.20mm)
ESR (Equivalent Series Resistance): 200 Ohms
Frequency: 6 MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FL5540001Q |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 55.4667MHZ 9PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 9pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 55.4667 MHz
Description: CRYSTAL 55.4667MHZ 9PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 9pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 55.4667 MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PI6C5913004ZHIEX |
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Hersteller: Diodes Incorporated
Description: IC CLK BUFFER 1:4 3GHZ 16TQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-TQFN (3x3)
Frequency - Max: 3 GHz
Description: IC CLK BUFFER 1:4 3GHZ 16TQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-TQFN (3x3)
Frequency - Max: 3 GHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PI6C5913004ZHIEX |
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Hersteller: Diodes Incorporated
Description: IC CLK BUFFER 1:4 3GHZ 16TQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-TQFN (3x3)
Frequency - Max: 3 GHz
Description: IC CLK BUFFER 1:4 3GHZ 16TQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-TQFN (3x3)
Frequency - Max: 3 GHz
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.95 EUR |
| 10+ | 6.25 EUR |
| 25+ | 5.91 EUR |
| G8327A045 |
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auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.57 EUR |
| 6000+ | 0.55 EUR |
| 15000+ | 0.53 EUR |






















