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AL58263T24E-13 AL58263T24E-13 Diodes Incorporated AL58263.pdf Description: LED LINEAR DRIVER TSSOP-24EP T&R
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 15V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 55mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: 24-TSSOP-EP (Type A1)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Produkt ist nicht verfügbar
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AL58263T24E-13 AL58263T24E-13 Diodes Incorporated AL58263.pdf Description: LED LINEAR DRIVER TSSOP-24EP T&R
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 15V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 55mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: 24-TSSOP-EP (Type A1)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
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100+1.33 EUR
250+1.17 EUR
500+1.07 EUR
1000+0.99 EUR
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SBR3U100LP-7 SBR3U100LP-7 Diodes Incorporated SBR3U100LP.pdf Description: DIODE SBR 100V 3A U-DFN3030-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: U-DFN3030-8
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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SBR3U100LP-7 SBR3U100LP-7 Diodes Incorporated SBR3U100LP.pdf Description: DIODE SBR 100V 3A U-DFN3030-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: U-DFN3030-8
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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TT4TM Diodes Incorporated TT4TM.pdf Description: Medium/High Power Bridge TTL T&R
Packaging: Bulk
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TTL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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FW4090001 FW4090001 Diodes Incorporated Description: CRYSTAL 40.9600MHZ 6PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 6pF
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.022" (0.55mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 40.96 MHz
Produkt ist nicht verfügbar
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DMPH1006UPS-13 DMPH1006UPS-13 Diodes Incorporated DMPH1006UPS.pdf Description: MOSFET P-CH 12V 80A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 6334 pF @ 10 V
Qualification: AEC-Q101
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DMPH1006UPS-13 DMPH1006UPS-13 Diodes Incorporated DMPH1006UPS.pdf Description: MOSFET P-CH 12V 80A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 6334 pF @ 10 V
Qualification: AEC-Q101
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DMN60H80DHFF-7 Diodes Incorporated Description: MOSFET N-CH 600V 80MA SOT23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FX1200065 FX1200065 Diodes Incorporated F6_FX.pdf Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.236" L x 0.138" W (6.00mm x 3.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Height - Seated (Max): 0.053" (1.35mm)
Produkt ist nicht verfügbar
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FN2500226 FN2500226 Diodes Incorporated FN2500226.pdf Description: XTAL OSC XO 25.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 95°C
Voltage - Supply: 3.3V
Frequency: 25 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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SMBJ45CAQ-13-F SMBJ45CAQ-13-F Diodes Incorporated ds40740.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FN3300067 FN3300067 Diodes Incorporated FN_3-3V.pdf Description: XTAL OSC XO 33.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 33 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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D15V0S1U2LP1610-7 D15V0S1U2LP1610-7 Diodes Incorporated D12V0S1U2LP1610_D50V0S1U2LP1610.pdf Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 270pF @ 1MHz
Current - Peak Pulse (10/1000µs): 48A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
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D15V0S1U2LP1610-7 D15V0S1U2LP1610-7 Diodes Incorporated D12V0S1U2LP1610_D50V0S1U2LP1610.pdf Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 270pF @ 1MHz
Current - Peak Pulse (10/1000µs): 48A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
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D12V0S1U2LP1610-7 D12V0S1U2LP1610-7 Diodes Incorporated D12V0S1U2LP1610_D50V0S1U2LP1610.pdf Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
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D12V0S1U2LP1610-7 D12V0S1U2LP1610-7 Diodes Incorporated D12V0S1U2LP1610_D50V0S1U2LP1610.pdf Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
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38+0.48 EUR
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500+0.20 EUR
1000+0.15 EUR
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D22V0S1U2LP1610-7 D22V0S1U2LP1610-7 Diodes Incorporated D12V0S1U2LP1610_D50V0S1U2LP1610.pdf Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 226pF @ 1MHz
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Voltage - Clamping (Max) @ Ipp: 38V
Power Line Protection: No
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D22V0S1U2LP1610-7 D22V0S1U2LP1610-7 Diodes Incorporated D12V0S1U2LP1610_D50V0S1U2LP1610.pdf Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 226pF @ 1MHz
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Voltage - Clamping (Max) @ Ipp: 38V
Power Line Protection: No
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1000+0.15 EUR
2000+0.13 EUR
5000+0.12 EUR
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D20V0S1U2LP1610-7 D20V0S1U2LP1610-7 Diodes Incorporated D12V0S1U2LP1610_D50V0S1U2LP1610.pdf Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 242pF @ 1MHz
Current - Peak Pulse (10/1000µs): 37A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22V
Voltage - Clamping (Max) @ Ipp: 36V
Power Line Protection: No
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D20V0S1U2LP1610-7 D20V0S1U2LP1610-7 Diodes Incorporated D12V0S1U2LP1610_D50V0S1U2LP1610.pdf Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 242pF @ 1MHz
Current - Peak Pulse (10/1000µs): 37A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22V
Voltage - Clamping (Max) @ Ipp: 36V
Power Line Protection: No
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2000+0.13 EUR
5000+0.12 EUR
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DMP6018LPS-13 DMP6018LPS-13 Diodes Incorporated DMP6018LPS.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V
Power Dissipation (Max): 2.6W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3505 pF @ 30 V
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500+1.51 EUR
1000+1.28 EUR
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DMP6018LPSQ-13 DMP6018LPSQ-13 Diodes Incorporated DMP6018LPSQ.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V
Power Dissipation (Max): 2.6W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3505 pF @ 30 V
Qualification: AEC-Q101
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500+1.35 EUR
1000+1.14 EUR
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MMBZ5251BW-7-F MMBZ5251BW-7-F Diodes Incorporated ds31037.pdf Description: DIODE ZENER 22V 200MW SOT323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
Qualification: AEC-Q101
auf Bestellung 108000 Stücke:
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6000+0.10 EUR
9000+0.08 EUR
30000+0.08 EUR
75000+0.07 EUR
Mindestbestellmenge: 3000
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MMBZ5221BW-7-F MMBZ5221BW-7-F Diodes Incorporated ds31037.pdf Description: DIODE ZENER 2.4V 200MW SOT323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 69000 Stücke:
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31+0.58 EUR
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AP393AM8G-13 AP393AM8G-13 Diodes Incorporated AP393A.pdf Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: CMOS, DTL, ECL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 8mV @ 5V
Current - Input Bias (Max): 0.4µA @ 5V
Current - Output (Typ): 16mA @ 5V
auf Bestellung 17500 Stücke:
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2500+0.37 EUR
5000+0.34 EUR
7500+0.33 EUR
12500+0.31 EUR
17500+0.30 EUR
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AP393AM8G-13 AP393AM8G-13 Diodes Incorporated AP393A.pdf Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: CMOS, DTL, ECL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 8mV @ 5V
Current - Input Bias (Max): 0.4µA @ 5V
Current - Output (Typ): 16mA @ 5V
auf Bestellung 17500 Stücke:
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BS107PSTZ BS107PSTZ Diodes Incorporated BS107P.pdf Description: MOSFET N-CH 200V 120MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 5V
Power Dissipation (Max): 500mW (Ta)
Supplier Device Package: E-Line (TO-92 compatible)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH69M8LFVWQ-7 DMTH69M8LFVWQ-7 Diodes Incorporated DMTH69M8LFVWQ.pdf Description: MOSFET BVDSS: 41V-60V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
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DMTH69M8LFVWQ-7 DMTH69M8LFVWQ-7 Diodes Incorporated DMTH69M8LFVWQ.pdf Description: MOSFET BVDSS: 41V-60V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
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LSF0204ZB14-13 LSF0204ZB14-13 Diodes Incorporated LSF0204.pdf Description: LOGIC ULS V-QFN3535-14 T&R 5K
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 14-QFN (3.5x3.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 5.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
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LSF0204T14-13 LSF0204T14-13 Diodes Incorporated LSF0204.pdf Description: LOGIC ULS TSSOP-14 T&R 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 14-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 4.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
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LSF0204QT14-13 LSF0204QT14-13 Diodes Incorporated LSF0204Q.pdf Description: LOGIC ULS TSSOP-14 T&R 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 14-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 4.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q100
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D12V0S1U2LP1610Q-7 D12V0S1U2LP1610Q-7 Diodes Incorporated D12V0S1U2LP1610Q.pdf Description: TVS DIODE 12VWM 20V UDFN16102
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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D12V0S1U2LP1610Q-7 D12V0S1U2LP1610Q-7 Diodes Incorporated D12V0S1U2LP1610Q.pdf Description: TVS DIODE 12VWM 20V UDFN16102
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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LM4040B33FTA LM4040B33FTA Diodes Incorporated LM4040.pdf Description: IC VREF SHUNT 0.2% SOT23
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.3V
Noise - 10Hz to 10kHz: 35µVrms
Current - Cathode: 70 µA
Current - Output: 15 mA
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LM4040B33FTA LM4040B33FTA Diodes Incorporated LM4040.pdf Description: IC VREF SHUNT 0.2% SOT23
Tolerance: ±0.2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.3V
Noise - 10Hz to 10kHz: 35µVrms
Current - Cathode: 70 µA
Current - Output: 15 mA
auf Bestellung 18238 Stücke:
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FL1690007 FL1690007 Diodes Incorporated FL.pdf Description: CRYSTAL 16.9344MHZ 16PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 16pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±50ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 16.9344 MHz
Produkt ist nicht verfügbar
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SMF4L18CAQ-7 SMF4L18CAQ-7 Diodes Incorporated SMF4L5.0CAQ-SMF4L200CAQ.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-219AA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH8008LPSQ-13 DMTH8008LPSQ-13 Diodes Incorporated DMTH8008LPSQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH8008LPSQ-13 DMTH8008LPSQ-13 Diodes Incorporated DMTH8008LPSQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 2120 Stücke:
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DMTH32M5LPSQ-13 DMTH32M5LPSQ-13 Diodes Incorporated DMTH32M5LPSQ.pdf Description: MOSFET N-CH 30V 170A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
Qualification: AEC-Q101
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DMTH32M5LPSQ-13 DMTH32M5LPSQ-13 Diodes Incorporated DMTH32M5LPSQ.pdf Description: MOSFET N-CH 30V 170A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 107371 Stücke:
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DJT4030P-13 DJT4030P-13 Diodes Incorporated ds31590.pdf Description: TRANS PNP 40V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.2 W
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DJT4030P-13 DJT4030P-13 Diodes Incorporated ds31590.pdf Description: TRANS PNP 40V 3A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.2 W
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DMN31D4UFZ-7B DMN31D4UFZ-7B Diodes Incorporated DMN31D4UFZ.pdf Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
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50000+0.04 EUR
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DMN31D4UFZ-7B DMN31D4UFZ-7B Diodes Incorporated DMN31D4UFZ.pdf Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
auf Bestellung 736225 Stücke:
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DMN31D6UT-7 DMN31D6UT-7 Diodes Incorporated DMN31D6UT.pdf Description: MOSFET N-CH 30V 350MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
auf Bestellung 960000 Stücke:
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3000+0.09 EUR
6000+0.08 EUR
9000+0.07 EUR
30000+0.07 EUR
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DMN31D6UT-7 DMN31D6UT-7 Diodes Incorporated DMN31D6UT.pdf Description: MOSFET N-CH 30V 350MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
auf Bestellung 962995 Stücke:
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DMN31D5L-13 DMN31D5L-13 Diodes Incorporated DMN31D5L.pdf Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
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DMN31D5L-13 DMN31D5L-13 Diodes Incorporated DMN31D5L.pdf Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
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DMN31D5L-7 DMN31D5L-7 Diodes Incorporated DMN31D5L.pdf Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
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DMN31D5L-7 DMN31D5L-7 Diodes Incorporated DMN31D5L.pdf Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
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DMN31D5UDAQ-7B DMN31D5UDAQ-7B Diodes Incorporated DMN31D5UDAQ.pdf Description: MOSFET 2N-CH 30V 0.4A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN31D5UDW-7 DMN31D5UDW-7 Diodes Incorporated DMN31D5UDW.pdf Description: MOSFET BVDSS: 25V~30V SOT363 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-363
Produkt ist nicht verfügbar
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DMN31D5UFZQ-7B DMN31D5UFZQ-7B Diodes Incorporated DMN31D5UFZQ.pdf Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 22.6 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH4014LPDWQ-13 Diodes Incorporated DMTH4014LPDWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Grade: Automotive
Qualification: AEC-Q101
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DXTN22040CFGQ-7 DXTN22040CFGQ-7 Diodes Incorporated DXTN22040CFGQ.pdf Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Qualification: AEC-Q101
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DXTN22040DFGQ-7 DXTN22040DFGQ-7 Diodes Incorporated DXTN22040DFGQ.pdf Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Frequency - Transition: 198MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Qualification: AEC-Q101
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DXTN22040CFG-7 DXTN22040CFG-7 Diodes Incorporated DXTN22040CFG.pdf Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
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AL58263T24E-13 AL58263.pdf
AL58263T24E-13
Hersteller: Diodes Incorporated
Description: LED LINEAR DRIVER TSSOP-24EP T&R
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 15V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 55mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: 24-TSSOP-EP (Type A1)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
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AL58263T24E-13 AL58263.pdf
AL58263T24E-13
Hersteller: Diodes Incorporated
Description: LED LINEAR DRIVER TSSOP-24EP T&R
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 15V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 55mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: 24-TSSOP-EP (Type A1)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
auf Bestellung 2097 Stücke:
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6+3.08 EUR
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SBR3U100LP-7 SBR3U100LP.pdf
SBR3U100LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 3A U-DFN3030-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: U-DFN3030-8
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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SBR3U100LP-7 SBR3U100LP.pdf
SBR3U100LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 3A U-DFN3030-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: U-DFN3030-8
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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15+1.23 EUR
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TT4TM TT4TM.pdf
Hersteller: Diodes Incorporated
Description: Medium/High Power Bridge TTL T&R
Packaging: Bulk
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TTL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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FW4090001
FW4090001
Hersteller: Diodes Incorporated
Description: CRYSTAL 40.9600MHZ 6PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 6pF
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.022" (0.55mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 40.96 MHz
Produkt ist nicht verfügbar
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DMPH1006UPS-13 DMPH1006UPS.pdf
DMPH1006UPS-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 80A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 6334 pF @ 10 V
Qualification: AEC-Q101
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DMPH1006UPS-13 DMPH1006UPS.pdf
DMPH1006UPS-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 80A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 6334 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4984 Stücke:
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13+1.39 EUR
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DMN60H80DHFF-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 600V 80MA SOT23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FX1200065 F6_FX.pdf
FX1200065
Hersteller: Diodes Incorporated
Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.236" L x 0.138" W (6.00mm x 3.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Height - Seated (Max): 0.053" (1.35mm)
Produkt ist nicht verfügbar
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FN2500226 FN2500226.pdf
FN2500226
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 25.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 95°C
Voltage - Supply: 3.3V
Frequency: 25 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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SMBJ45CAQ-13-F ds40740.pdf
SMBJ45CAQ-13-F
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FN3300067 FN_3-3V.pdf
FN3300067
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 33.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 33 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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D15V0S1U2LP1610-7 D12V0S1U2LP1610_D50V0S1U2LP1610.pdf
D15V0S1U2LP1610-7
Hersteller: Diodes Incorporated
Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 270pF @ 1MHz
Current - Peak Pulse (10/1000µs): 48A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
auf Bestellung 410000 Stücke:
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10000+0.10 EUR
30000+0.10 EUR
50000+0.08 EUR
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D15V0S1U2LP1610-7 D12V0S1U2LP1610_D50V0S1U2LP1610.pdf
D15V0S1U2LP1610-7
Hersteller: Diodes Incorporated
Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 270pF @ 1MHz
Current - Peak Pulse (10/1000µs): 48A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
auf Bestellung 419864 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
38+0.48 EUR
100+0.24 EUR
500+0.20 EUR
1000+0.15 EUR
2000+0.12 EUR
Mindestbestellmenge: 26
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D12V0S1U2LP1610-7 D12V0S1U2LP1610_D50V0S1U2LP1610.pdf
D12V0S1U2LP1610-7
Hersteller: Diodes Incorporated
Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.10 EUR
30000+0.10 EUR
50000+0.08 EUR
Mindestbestellmenge: 10000
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D12V0S1U2LP1610-7 D12V0S1U2LP1610_D50V0S1U2LP1610.pdf
D12V0S1U2LP1610-7
Hersteller: Diodes Incorporated
Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
auf Bestellung 109505 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
38+0.48 EUR
100+0.24 EUR
500+0.20 EUR
1000+0.15 EUR
2000+0.12 EUR
Mindestbestellmenge: 26
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D22V0S1U2LP1610-7 D12V0S1U2LP1610_D50V0S1U2LP1610.pdf
D22V0S1U2LP1610-7
Hersteller: Diodes Incorporated
Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 226pF @ 1MHz
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Voltage - Clamping (Max) @ Ipp: 38V
Power Line Protection: No
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.11 EUR
Mindestbestellmenge: 10000
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D22V0S1U2LP1610-7 D12V0S1U2LP1610_D50V0S1U2LP1610.pdf
D22V0S1U2LP1610-7
Hersteller: Diodes Incorporated
Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 226pF @ 1MHz
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Voltage - Clamping (Max) @ Ipp: 38V
Power Line Protection: No
auf Bestellung 39950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
35+0.51 EUR
100+0.26 EUR
500+0.21 EUR
1000+0.15 EUR
2000+0.13 EUR
5000+0.12 EUR
Mindestbestellmenge: 25
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D20V0S1U2LP1610-7 D12V0S1U2LP1610_D50V0S1U2LP1610.pdf
D20V0S1U2LP1610-7
Hersteller: Diodes Incorporated
Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 242pF @ 1MHz
Current - Peak Pulse (10/1000µs): 37A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22V
Voltage - Clamping (Max) @ Ipp: 36V
Power Line Protection: No
auf Bestellung 550000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.11 EUR
50000+0.09 EUR
Mindestbestellmenge: 10000
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D20V0S1U2LP1610-7 D12V0S1U2LP1610_D50V0S1U2LP1610.pdf
D20V0S1U2LP1610-7
Hersteller: Diodes Incorporated
Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 242pF @ 1MHz
Current - Peak Pulse (10/1000µs): 37A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22V
Voltage - Clamping (Max) @ Ipp: 36V
Power Line Protection: No
auf Bestellung 558735 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
35+0.51 EUR
100+0.26 EUR
500+0.21 EUR
1000+0.15 EUR
2000+0.13 EUR
5000+0.12 EUR
Mindestbestellmenge: 25
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DMP6018LPS-13 DMP6018LPS.pdf
DMP6018LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V
Power Dissipation (Max): 2.6W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3505 pF @ 30 V
auf Bestellung 12413 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.71 EUR
10+2.24 EUR
100+1.79 EUR
500+1.51 EUR
1000+1.28 EUR
Mindestbestellmenge: 7
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DMP6018LPSQ-13 DMP6018LPSQ.pdf
DMP6018LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V
Power Dissipation (Max): 2.6W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3505 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2336 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
10+2.00 EUR
100+1.59 EUR
500+1.35 EUR
1000+1.14 EUR
Mindestbestellmenge: 8
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MMBZ5251BW-7-F ds31037.pdf
MMBZ5251BW-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 22V 200MW SOT323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
Qualification: AEC-Q101
auf Bestellung 108000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.10 EUR
6000+0.10 EUR
9000+0.08 EUR
30000+0.08 EUR
75000+0.07 EUR
Mindestbestellmenge: 3000
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MMBZ5221BW-7-F ds31037.pdf
MMBZ5221BW-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.4V 200MW SOT323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
Mindestbestellmenge: 31
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AP393AM8G-13 AP393A.pdf
AP393AM8G-13
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: CMOS, DTL, ECL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 8mV @ 5V
Current - Input Bias (Max): 0.4µA @ 5V
Current - Output (Typ): 16mA @ 5V
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.37 EUR
5000+0.34 EUR
7500+0.33 EUR
12500+0.31 EUR
17500+0.30 EUR
Mindestbestellmenge: 2500
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AP393AM8G-13 AP393A.pdf
AP393AM8G-13
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: CMOS, DTL, ECL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 8mV @ 5V
Current - Input Bias (Max): 0.4µA @ 5V
Current - Output (Typ): 16mA @ 5V
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
20+0.90 EUR
25+0.75 EUR
100+0.59 EUR
250+0.50 EUR
500+0.45 EUR
1000+0.41 EUR
Mindestbestellmenge: 13
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BS107PSTZ BS107P.pdf
BS107PSTZ
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 200V 120MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 5V
Power Dissipation (Max): 500mW (Ta)
Supplier Device Package: E-Line (TO-92 compatible)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH69M8LFVWQ-7 DMTH69M8LFVWQ.pdf
DMTH69M8LFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.46 EUR
Mindestbestellmenge: 2000
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DMTH69M8LFVWQ-7 DMTH69M8LFVWQ.pdf
DMTH69M8LFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3145 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
16+1.10 EUR
100+0.72 EUR
500+0.56 EUR
1000+0.51 EUR
Mindestbestellmenge: 10
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LSF0204ZB14-13 LSF0204.pdf
LSF0204ZB14-13
Hersteller: Diodes Incorporated
Description: LOGIC ULS V-QFN3535-14 T&R 5K
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 14-QFN (3.5x3.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 5.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.22 EUR
Mindestbestellmenge: 5000
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LSF0204T14-13 LSF0204.pdf
LSF0204T14-13
Hersteller: Diodes Incorporated
Description: LOGIC ULS TSSOP-14 T&R 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 14-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 4.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.35 EUR
5000+0.32 EUR
7500+0.30 EUR
12500+0.28 EUR
17500+0.27 EUR
25000+0.26 EUR
Mindestbestellmenge: 2500
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LSF0204QT14-13 LSF0204Q.pdf
LSF0204QT14-13
Hersteller: Diodes Incorporated
Description: LOGIC ULS TSSOP-14 T&R 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 14-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 4.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q100
auf Bestellung 37500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.37 EUR
5000+0.34 EUR
7500+0.32 EUR
12500+0.30 EUR
17500+0.29 EUR
Mindestbestellmenge: 2500
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D12V0S1U2LP1610Q-7 D12V0S1U2LP1610Q.pdf
D12V0S1U2LP1610Q-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 12VWM 20V UDFN16102
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.17 EUR
Mindestbestellmenge: 10000
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D12V0S1U2LP1610Q-7 D12V0S1U2LP1610Q.pdf
D12V0S1U2LP1610Q-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 12VWM 20V UDFN16102
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 19710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.90 EUR
32+0.56 EUR
100+0.35 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.21 EUR
5000+0.19 EUR
Mindestbestellmenge: 20
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LM4040B33FTA LM4040.pdf
LM4040B33FTA
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 0.2% SOT23
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.3V
Noise - 10Hz to 10kHz: 35µVrms
Current - Cathode: 70 µA
Current - Output: 15 mA
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.64 EUR
6000+0.60 EUR
9000+0.58 EUR
15000+0.56 EUR
Mindestbestellmenge: 3000
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LM4040B33FTA LM4040.pdf
LM4040B33FTA
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 0.2% SOT23
Tolerance: ±0.2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.3V
Noise - 10Hz to 10kHz: 35µVrms
Current - Cathode: 70 µA
Current - Output: 15 mA
auf Bestellung 18238 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.36 EUR
12+1.49 EUR
25+1.26 EUR
100+0.99 EUR
250+0.87 EUR
500+0.79 EUR
1000+0.72 EUR
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FL1690007 FL.pdf
FL1690007
Hersteller: Diodes Incorporated
Description: CRYSTAL 16.9344MHZ 16PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 16pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±50ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 16.9344 MHz
Produkt ist nicht verfügbar
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SMF4L18CAQ-7 SMF4L5.0CAQ-SMF4L200CAQ.pdf
SMF4L18CAQ-7
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-219AA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH8008LPSQ-13 DMTH8008LPSQ.pdf
DMTH8008LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH8008LPSQ-13 DMTH8008LPSQ.pdf
DMTH8008LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 2120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
12+1.53 EUR
100+1.07 EUR
500+0.87 EUR
1000+0.80 EUR
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DMTH32M5LPSQ-13 DMTH32M5LPSQ.pdf
DMTH32M5LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 170A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.76 EUR
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DMTH32M5LPSQ-13 DMTH32M5LPSQ.pdf
DMTH32M5LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 170A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 107371 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.99 EUR
11+1.61 EUR
100+1.12 EUR
500+0.95 EUR
1000+0.87 EUR
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DJT4030P-13 ds31590.pdf
DJT4030P-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.2 W
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.31 EUR
5000+0.28 EUR
7500+0.27 EUR
12500+0.25 EUR
17500+0.24 EUR
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DJT4030P-13 ds31590.pdf
DJT4030P-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 3A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.2 W
auf Bestellung 61706 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
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DMN31D4UFZ-7B DMN31D4UFZ.pdf
DMN31D4UFZ-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
auf Bestellung 730000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.05 EUR
20000+0.05 EUR
30000+0.04 EUR
50000+0.04 EUR
70000+0.04 EUR
250000+0.04 EUR
Mindestbestellmenge: 10000
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DMN31D4UFZ-7B DMN31D4UFZ.pdf
DMN31D4UFZ-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
auf Bestellung 736225 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
91+0.19 EUR
218+0.08 EUR
500+0.08 EUR
1000+0.07 EUR
2000+0.07 EUR
5000+0.06 EUR
Mindestbestellmenge: 59
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DMN31D6UT-7 DMN31D6UT.pdf
DMN31D6UT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
auf Bestellung 960000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
6000+0.08 EUR
9000+0.07 EUR
30000+0.07 EUR
75000+0.06 EUR
150000+0.05 EUR
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DMN31D6UT-7 DMN31D6UT.pdf
DMN31D6UT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
auf Bestellung 962995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
50+0.36 EUR
102+0.17 EUR
500+0.14 EUR
1000+0.10 EUR
Mindestbestellmenge: 35
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DMN31D5L-13 DMN31D5L.pdf
DMN31D5L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 420000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.08 EUR
30000+0.08 EUR
50000+0.07 EUR
100000+0.06 EUR
250000+0.06 EUR
Mindestbestellmenge: 10000
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DMN31D5L-13 DMN31D5L.pdf
DMN31D5L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 420000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
43+0.42 EUR
100+0.20 EUR
500+0.17 EUR
1000+0.12 EUR
2000+0.10 EUR
5000+0.10 EUR
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DMN31D5L-7 DMN31D5L.pdf
DMN31D5L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 5316000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.10 EUR
6000+0.10 EUR
9000+0.08 EUR
30000+0.08 EUR
75000+0.07 EUR
150000+0.06 EUR
Mindestbestellmenge: 3000
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DMN31D5L-7 DMN31D5L.pdf
DMN31D5L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 5320042 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
43+0.42 EUR
100+0.20 EUR
500+0.17 EUR
1000+0.12 EUR
Mindestbestellmenge: 29
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DMN31D5UDAQ-7B DMN31D5UDAQ.pdf
DMN31D5UDAQ-7B
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.4A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN31D5UDW-7 DMN31D5UDW.pdf
DMN31D5UDW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT363 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-363
Produkt ist nicht verfügbar
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DMN31D5UFZQ-7B DMN31D5UFZQ.pdf
DMN31D5UFZQ-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 22.6 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH4014LPDWQ-13 DMTH4014LPDWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DXTN22040CFGQ-7 DXTN22040CFGQ.pdf
DXTN22040CFGQ-7
Hersteller: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Qualification: AEC-Q101
auf Bestellung 19980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
22+0.81 EUR
100+0.56 EUR
500+0.47 EUR
1000+0.40 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
DXTN22040DFGQ-7 DXTN22040DFGQ.pdf
DXTN22040DFGQ-7
Hersteller: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Frequency - Transition: 198MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Qualification: AEC-Q101
auf Bestellung 19980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
22+0.81 EUR
100+0.56 EUR
500+0.47 EUR
1000+0.40 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
DXTN22040CFG-7 DXTN22040CFG.pdf
DXTN22040CFG-7
Hersteller: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
auf Bestellung 21980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
20+0.90 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.40 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
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