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DMN31D4UFZ-7B DMN31D4UFZ-7B Diodes Incorporated DMN31D4UFZ.pdf Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
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20000+0.046 EUR
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50000+0.041 EUR
70000+0.04 EUR
250000+0.037 EUR
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DMN31D4UFZ-7B DMN31D4UFZ-7B Diodes Incorporated DMN31D4UFZ.pdf Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
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91+0.19 EUR
218+0.081 EUR
500+0.079 EUR
1000+0.07 EUR
2000+0.065 EUR
5000+0.06 EUR
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DMN31D6UT-7 DMN31D6UT-7 Diodes Incorporated DMN31D6UT.pdf Description: MOSFET N-CH 30V 350MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
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DMN31D6UT-7 DMN31D6UT-7 Diodes Incorporated DMN31D6UT.pdf Description: MOSFET N-CH 30V 350MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
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DMN31D5L-13 DMN31D5L-13 Diodes Incorporated DMN31D5L.pdf Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 420000 Stücke:
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DMN31D5L-13 DMN31D5L-13 Diodes Incorporated DMN31D5L.pdf Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
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DMN31D5L-7 DMN31D5L-7 Diodes Incorporated DMN31D5L.pdf Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 5316000 Stücke:
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6000+0.095 EUR
9000+0.079 EUR
30000+0.078 EUR
75000+0.07 EUR
150000+0.06 EUR
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DMN31D5L-7 DMN31D5L-7 Diodes Incorporated DMN31D5L.pdf Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 5320042 Stücke:
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500+0.17 EUR
1000+0.12 EUR
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DMN31D5UDAQ-7B DMN31D5UDAQ-7B Diodes Incorporated DMN31D5UDAQ.pdf Description: MOSFET 2N-CH 30V 0.4A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN31D5UDW-7 DMN31D5UDW-7 Diodes Incorporated DMN31D5UDW.pdf Description: MOSFET BVDSS: 25V~30V SOT363 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-363
Produkt ist nicht verfügbar
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DMN31D5UFZQ-7B DMN31D5UFZQ-7B Diodes Incorporated DMN31D5UFZQ.pdf Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 22.6 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH4014LPDWQ-13 DMTH4014LPDWQ-13 Diodes Incorporated DMTH4014LPDWQ.pdf Description: MOSFET 2N-CH 40V 10.6A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DXTN22040CFGQ-7 DXTN22040CFGQ-7 Diodes Incorporated DXTN22040CFGQ.pdf Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Qualification: AEC-Q101
auf Bestellung 19980 Stücke:
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22+0.81 EUR
100+0.56 EUR
500+0.47 EUR
1000+0.4 EUR
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DXTN22040DFGQ-7 DXTN22040DFGQ-7 Diodes Incorporated DXTN22040DFGQ.pdf Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Frequency - Transition: 198MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Qualification: AEC-Q101
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DXTN22040CFG-7 DXTN22040CFG-7 Diodes Incorporated DXTN22040CFG.pdf Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
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DXTN22040DFG-7 DXTN22040DFG-7 Diodes Incorporated DXTN22040DFG.pdf Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Frequency - Transition: 198MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Produkt ist nicht verfügbar
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PI6LC48P25104LE PI6LC48P25104LE Diodes Incorporated PI6LC48P25104.pdf Description: 156.25MHZ LVPECL SYNTHESIZER
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 187.5MHz
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Main Purpose: Ethernet
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 8-TSSOP
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PI3EQX12908AZFEX PI3EQX12908AZFEX Diodes Incorporated PI3EQX12908A-pb.pdf Description: IC REDRIVER 12GBPS 8CHAN 54TQFN
Packaging: Tape & Reel (TR)
Package / Case: 54-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 12Gbps
Supplier Device Package: 54-TQFN (10x5.5)
Signal Conditioning: Input Equalization, Output De-Emphasis
auf Bestellung 38500 Stücke:
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3500+6.19 EUR
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PI3EQX12908AZFEX PI3EQX12908AZFEX Diodes Incorporated PI3EQX12908A-pb.pdf Description: IC REDRIVER 12GBPS 8CHAN 54TQFN
Packaging: Cut Tape (CT)
Package / Case: 54-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 12Gbps
Supplier Device Package: 54-TQFN (10x5.5)
Signal Conditioning: Input Equalization, Output De-Emphasis
auf Bestellung 39364 Stücke:
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2+13.99 EUR
10+9.44 EUR
25+8.25 EUR
100+6.91 EUR
250+6.25 EUR
500+6.19 EUR
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DMT34M8LFDE-7 DMT34M8LFDE-7 Diodes Incorporated DMT34M8LFDE.pdf Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 15 V
Produkt ist nicht verfügbar
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DMP4013SPSQ-13 DMP4013SPSQ-13 Diodes Incorporated DMP4013SPSQ.pdf Description: MOSFET P-CH 40V 11A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 27500 Stücke:
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2500+0.79 EUR
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DMP4013SPSQ-13 DMP4013SPSQ-13 Diodes Incorporated DMP4013SPSQ.pdf Description: MOSFET P-CH 40V 11A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Qualification: AEC-Q101
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DMN2992UFB4Q-7B DMN2992UFB4Q-7B Diodes Incorporated DMN2992UFB4Q.pdf Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V
Qualification: AEC-Q101
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DMN2992UFB4Q-7B DMN2992UFB4Q-7B Diodes Incorporated DMN2992UFB4Q.pdf Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V
Qualification: AEC-Q101
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ZXMS6008DN8-13 ZXMS6008DN8-13 Diodes Incorporated ZXMS6008DN8.pdf Description: LOW SIDE INTELLIFET SO-8 T&R 2.5
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
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ZXMS6008DN8Q-13 ZXMS6008DN8Q-13 Diodes Incorporated ZXMS6008DN8Q.pdf Description: LOW SIDE INTELLIFET SO-8 T&R 2.5
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
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SDR05F03T5-7 SDR05F03T5-7 Diodes Incorporated Description: DIODE SCHOTTKY 3V 50MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.1 ns
Technology: Schottky
Capacitance @ Vr, F: 0.52pF @ 200mV, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 3 V
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FL2500047 FL2500047 Diodes Incorporated FL.pdf Description: CRYSTAL 25.0000MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
Supplier Device Package: 4-SMD (3.2x2.5)
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FL2500047 FL2500047 Diodes Incorporated FL.pdf Description: CRYSTAL 25.0000MHZ 18PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
Supplier Device Package: 4-SMD (3.2x2.5)
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DDZ9684Q-7 DDZ9684Q-7 Diodes Incorporated ds30410.pdf Description: DIODE ZENER 3.3V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
Qualification: AEC-Q101
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DDZ9684Q-7 DDZ9684Q-7 Diodes Incorporated ds30410.pdf Description: DIODE ZENER 3.3V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
Qualification: AEC-Q101
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DDZ9689Q-7 DDZ9689Q-7 Diodes Incorporated ds30410.pdf Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
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DDZ9689Q-7 DDZ9689Q-7 Diodes Incorporated ds30410.pdf Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
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NX21100001 NX21100001 Diodes Incorporated NX21100001.pdf Description: XTAL OSC XO 10.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 10 MHz
Base Resonator: Crystal
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SMBJ11A-13-F SMBJ11A-13-F Diodes Incorporated ds19002.pdf Description: TVS DIODE 11V 18.2V SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ11A-13-F SMBJ11A-13-F Diodes Incorporated ds19002.pdf Description: TVS DIODE 11V 18.2V SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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PI6C48535-01LE PI6C48535-01LE Diodes Incorporated PI6C48535-01.pdf Description: IC CLK BUFFER 2:4 500MHZ 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution), Multiplexer
Input: LVCMOS, LVPECL, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 2:4
Differential - Input:Output: No/Yes
Supplier Device Package: 20-TSSOP
Frequency - Max: 500 MHz
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PNP000013 Diodes Incorporated PN_3-3V_Dec04,2008_DS.pdf Description: DIODE
Packaging: Bulk
Type: XO (Standard)
Base Resonator: Crystal
Produkt ist nicht verfügbar
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PNU000001 Diodes Incorporated PN_3-3V_Dec04,2008_DS.pdf Description: XTAL OSC XO 300.0375MHZ PECL
Packaging: Bulk
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: PECL
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 300.0375 MHz
Base Resonator: Crystal
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FL4820001 FL4820001 Diodes Incorporated FL.pdf Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
Produkt ist nicht verfügbar
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PDS4200H-13 PDS4200H-13 Diodes Incorporated ds30596.pdf Description: DIODE SCHOTTKY 200V 4A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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PDS4200H-13 PDS4200H-13 Diodes Incorporated ds30596.pdf Description: DIODE SCHOTTKY 200V 4A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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AP1695-20CS7-13 AP1695-20CS7-13 Diodes Incorporated Description: IC LED DRIVER OFFL TRIAC 2A 7SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 2A
Internal Switch(s): Yes
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SO
Dimming: Triac
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 25V
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DMP2067LVTQ-13 DMP2067LVTQ-13 Diodes Incorporated DMP2067LVTQ.pdf Description: MOSFET BVDSS: 8V~24V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
Qualification: AEC-Q101
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DMP2067LVTQ-7 DMP2067LVTQ-7 Diodes Incorporated DMP2067LVTQ.pdf Description: MOSFET BVDSS: 8V~24V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
Qualification: AEC-Q101
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SMAJ64CA-13-F SMAJ64CA-13-F Diodes Incorporated SMAJ5.0CA-SMAJ200CA.pdf Description: TVS DIODE 64VWM 103VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.9A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJ64CA-13-F SMAJ64CA-13-F Diodes Incorporated SMAJ5.0CA-SMAJ200CA.pdf Description: TVS DIODE 64VWM 103VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.9A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 400W
Power Line Protection: No
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DMNH4026SSD-13 DMNH4026SSD-13 Diodes Incorporated DMNH4026SSD.pdf Description: MOSFET 2N-CH 7.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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DMNH4026SSD-13 DMNH4026SSD-13 Diodes Incorporated DMNH4026SSD.pdf Description: MOSFET 2N-CH 7.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 17030 Stücke:
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DMC4040SSDQ-13 DMC4040SSDQ-13 Diodes Incorporated DMC4040SSDQ.pdf Description: MOSFET N/P-CH 40V 7.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 17.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 20V
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
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DMC4040SSDQ-13 DMC4040SSDQ-13 Diodes Incorporated DMC4040SSDQ.pdf Description: MOSFET N/P-CH 40V 7.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 17.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 20V
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2335 Stücke:
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AZ1084CD-2.5TRG1 AZ1084CD-2.5TRG1 Diodes Incorporated AZ1084C.pdf Description: IC REG LINEAR 2.5V 5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 2.5V
PSRR: 72dB (120Hz)
Voltage Dropout (Max): 1.5V @ 4.5A
Protection Features: Over Current, Over Temperature
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AZ1084CD-2.5TRG1 AZ1084CD-2.5TRG1 Diodes Incorporated AZ1084C.pdf Description: IC REG LINEAR 2.5V 5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 2.5V
PSRR: 72dB (120Hz)
Voltage Dropout (Max): 1.5V @ 4.5A
Protection Features: Over Current, Over Temperature
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SMF4L43AQ-7 SMF4L43AQ-7 Diodes Incorporated SMF4L5.0CAQ-SMF4L200CAQ.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ54AQ-13-F SMCJ54AQ-13-F Diodes Incorporated SMCJ5.0CAQ-SMCJ200CAQ.pdf Description: TVS DIODE 54VWM 87.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ75CAQ-13-F SMAJ75CAQ-13-F Diodes Incorporated SMAJ5.0CAQ-SMAJ200CAQ.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZT585B5V6TQ-13 BZT585B5V6TQ-13 Diodes Incorporated BZT585B5V1TQ-BZT585B43TQ.pdf Description: TIGHT TOLERANCE ZENER DIODE SOD5
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
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S10KC-13 S10KC-13 Diodes Incorporated S10JC-S10MC.pdf Description: DIODE GEN PURP 800V 10A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 57000 Stücke:
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DMTH47M2SPSWQ-13 DMTH47M2SPSWQ-13 Diodes Incorporated DMTH47M2SPSWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
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PI7C9X2G404ELZXAEX PI7C9X2G404ELZXAEX Diodes Incorporated PI7C9X2G404EL.pdf Description: IC INTERFACE SPECIALIZED 136AQFN
Packaging: Tape & Reel (TR)
Package / Case: 136-VFQFN Dual Rows, Exposed Pad
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 4-Port/4-Lane
Supplier Device Package: 136-aQFN (10x10)
Produkt ist nicht verfügbar
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DMN31D4UFZ-7B DMN31D4UFZ.pdf
DMN31D4UFZ-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
auf Bestellung 730000 Stücke:
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10000+0.05 EUR
20000+0.046 EUR
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DMN31D4UFZ-7B DMN31D4UFZ.pdf
DMN31D4UFZ-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
auf Bestellung 736225 Stücke:
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Anzahl Preis
59+0.3 EUR
91+0.19 EUR
218+0.081 EUR
500+0.079 EUR
1000+0.07 EUR
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DMN31D6UT-7 DMN31D6UT.pdf
DMN31D6UT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
auf Bestellung 960000 Stücke:
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Anzahl Preis
3000+0.087 EUR
6000+0.081 EUR
9000+0.067 EUR
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DMN31D6UT-7 DMN31D6UT.pdf
DMN31D6UT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
auf Bestellung 962995 Stücke:
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DMN31D5L-13 DMN31D5L.pdf
DMN31D5L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 420000 Stücke:
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DMN31D5L-13 DMN31D5L.pdf
DMN31D5L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
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29+0.62 EUR
43+0.42 EUR
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DMN31D5L-7 DMN31D5L.pdf
DMN31D5L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 5316000 Stücke:
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3000+0.1 EUR
6000+0.095 EUR
9000+0.079 EUR
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DMN31D5L-7 DMN31D5L.pdf
DMN31D5L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 5320042 Stücke:
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Anzahl Preis
29+0.62 EUR
43+0.42 EUR
100+0.2 EUR
500+0.17 EUR
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DMN31D5UDAQ-7B DMN31D5UDAQ.pdf
DMN31D5UDAQ-7B
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.4A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
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DMN31D5UDW-7 DMN31D5UDW.pdf
DMN31D5UDW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT363 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-363
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DMN31D5UFZQ-7B DMN31D5UFZQ.pdf
DMN31D5UFZQ-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 22.6 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH4014LPDWQ-13 DMTH4014LPDWQ.pdf
DMTH4014LPDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 10.6A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DXTN22040CFGQ-7 DXTN22040CFGQ.pdf
DXTN22040CFGQ-7
Hersteller: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Qualification: AEC-Q101
auf Bestellung 19980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
22+0.81 EUR
100+0.56 EUR
500+0.47 EUR
1000+0.4 EUR
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DXTN22040DFGQ-7 DXTN22040DFGQ.pdf
DXTN22040DFGQ-7
Hersteller: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Frequency - Transition: 198MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Qualification: AEC-Q101
auf Bestellung 19980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
22+0.81 EUR
100+0.56 EUR
500+0.47 EUR
1000+0.4 EUR
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DXTN22040CFG-7 DXTN22040CFG.pdf
DXTN22040CFG-7
Hersteller: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
auf Bestellung 21980 Stücke:
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Anzahl Preis
17+1.06 EUR
20+0.9 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.4 EUR
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DXTN22040DFG-7 DXTN22040DFG.pdf
DXTN22040DFG-7
Hersteller: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Frequency - Transition: 198MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Produkt ist nicht verfügbar
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PI6LC48P25104LE PI6LC48P25104.pdf
PI6LC48P25104LE
Hersteller: Diodes Incorporated
Description: 156.25MHZ LVPECL SYNTHESIZER
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 187.5MHz
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Main Purpose: Ethernet
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 8-TSSOP
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PI3EQX12908AZFEX PI3EQX12908A-pb.pdf
PI3EQX12908AZFEX
Hersteller: Diodes Incorporated
Description: IC REDRIVER 12GBPS 8CHAN 54TQFN
Packaging: Tape & Reel (TR)
Package / Case: 54-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 12Gbps
Supplier Device Package: 54-TQFN (10x5.5)
Signal Conditioning: Input Equalization, Output De-Emphasis
auf Bestellung 38500 Stücke:
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Anzahl Preis
3500+6.19 EUR
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PI3EQX12908AZFEX PI3EQX12908A-pb.pdf
PI3EQX12908AZFEX
Hersteller: Diodes Incorporated
Description: IC REDRIVER 12GBPS 8CHAN 54TQFN
Packaging: Cut Tape (CT)
Package / Case: 54-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 12Gbps
Supplier Device Package: 54-TQFN (10x5.5)
Signal Conditioning: Input Equalization, Output De-Emphasis
auf Bestellung 39364 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.99 EUR
10+9.44 EUR
25+8.25 EUR
100+6.91 EUR
250+6.25 EUR
500+6.19 EUR
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DMT34M8LFDE-7 DMT34M8LFDE.pdf
DMT34M8LFDE-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 15 V
Produkt ist nicht verfügbar
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DMP4013SPSQ-13 DMP4013SPSQ.pdf
DMP4013SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 11A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 27500 Stücke:
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Anzahl Preis
2500+0.79 EUR
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DMP4013SPSQ-13 DMP4013SPSQ.pdf
DMP4013SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 11A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 27648 Stücke:
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Anzahl Preis
8+2.41 EUR
11+1.62 EUR
100+1.14 EUR
500+0.92 EUR
1000+0.85 EUR
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DMN2992UFB4Q-7B DMN2992UFB4Q.pdf
DMN2992UFB4Q-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
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10000+0.058 EUR
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DMN2992UFB4Q-7B DMN2992UFB4Q.pdf
DMN2992UFB4Q-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 11654 Stücke:
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Anzahl Preis
50+0.35 EUR
82+0.21 EUR
133+0.13 EUR
500+0.097 EUR
1000+0.085 EUR
2000+0.076 EUR
5000+0.065 EUR
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ZXMS6008DN8-13 ZXMS6008DN8.pdf
ZXMS6008DN8-13
Hersteller: Diodes Incorporated
Description: LOW SIDE INTELLIFET SO-8 T&R 2.5
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
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ZXMS6008DN8Q-13 ZXMS6008DN8Q.pdf
ZXMS6008DN8Q-13
Hersteller: Diodes Incorporated
Description: LOW SIDE INTELLIFET SO-8 T&R 2.5
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SDR05F03T5-7
SDR05F03T5-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 3V 50MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.1 ns
Technology: Schottky
Capacitance @ Vr, F: 0.52pF @ 200mV, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 3 V
auf Bestellung 183000 Stücke:
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Anzahl Preis
3000+0.084 EUR
6000+0.075 EUR
9000+0.071 EUR
15000+0.065 EUR
21000+0.062 EUR
30000+0.059 EUR
75000+0.053 EUR
150000+0.049 EUR
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FL2500047 FL.pdf
FL2500047
Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
Supplier Device Package: 4-SMD (3.2x2.5)
auf Bestellung 9000 Stücke:
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Anzahl Preis
3000+0.54 EUR
6000+0.51 EUR
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FL2500047 FL.pdf
FL2500047
Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 18PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
Supplier Device Package: 4-SMD (3.2x2.5)
auf Bestellung 12118 Stücke:
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Anzahl Preis
21+0.86 EUR
24+0.76 EUR
50+0.69 EUR
100+0.66 EUR
500+0.6 EUR
1000+0.57 EUR
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DDZ9684Q-7 ds30410.pdf
DDZ9684Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.3V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
Qualification: AEC-Q101
auf Bestellung 4143000 Stücke:
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Anzahl Preis
3000+0.061 EUR
6000+0.057 EUR
9000+0.047 EUR
30000+0.046 EUR
75000+0.041 EUR
150000+0.036 EUR
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DDZ9684Q-7 ds30410.pdf
DDZ9684Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.3V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
Qualification: AEC-Q101
auf Bestellung 4147073 Stücke:
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50+0.35 EUR
71+0.25 EUR
145+0.12 EUR
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DDZ9689Q-7 ds30410.pdf
DDZ9689Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
auf Bestellung 210000 Stücke:
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Anzahl Preis
3000+0.061 EUR
6000+0.057 EUR
9000+0.047 EUR
30000+0.046 EUR
75000+0.041 EUR
150000+0.036 EUR
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DDZ9689Q-7 ds30410.pdf
DDZ9689Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
auf Bestellung 211599 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
71+0.25 EUR
145+0.12 EUR
500+0.1 EUR
1000+0.07 EUR
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NX21100001 NX21100001.pdf
NX21100001
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 10.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 10 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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SMBJ11A-13-F ds19002.pdf
SMBJ11A-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 11V 18.2V SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 450000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.13 EUR
9000+0.12 EUR
30000+0.11 EUR
75000+0.1 EUR
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SMBJ11A-13-F ds19002.pdf
SMBJ11A-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 11V 18.2V SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 452970 Stücke:
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Anzahl Preis
26+0.69 EUR
43+0.42 EUR
100+0.2 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 26
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PI6C48535-01LE PI6C48535-01.pdf
PI6C48535-01LE
Hersteller: Diodes Incorporated
Description: IC CLK BUFFER 2:4 500MHZ 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution), Multiplexer
Input: LVCMOS, LVPECL, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 2:4
Differential - Input:Output: No/Yes
Supplier Device Package: 20-TSSOP
Frequency - Max: 500 MHz
Produkt ist nicht verfügbar
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PNP000013 PN_3-3V_Dec04,2008_DS.pdf
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Type: XO (Standard)
Base Resonator: Crystal
Produkt ist nicht verfügbar
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PNU000001 PN_3-3V_Dec04,2008_DS.pdf
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 300.0375MHZ PECL
Packaging: Bulk
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: PECL
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 300.0375 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FL4820001 FL.pdf
FL4820001
Hersteller: Diodes Incorporated
Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
Produkt ist nicht verfügbar
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PDS4200H-13 ds30596.pdf
PDS4200H-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 4A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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5000+1.62 EUR
10000+1.57 EUR
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PDS4200H-13 ds30596.pdf
PDS4200H-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 4A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 16459 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.73 EUR
10+3.1 EUR
100+2.47 EUR
500+2.09 EUR
1000+1.77 EUR
2000+1.68 EUR
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AP1695-20CS7-13
AP1695-20CS7-13
Hersteller: Diodes Incorporated
Description: IC LED DRIVER OFFL TRIAC 2A 7SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 2A
Internal Switch(s): Yes
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SO
Dimming: Triac
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 25V
Produkt ist nicht verfügbar
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DMP2067LVTQ-13 DMP2067LVTQ.pdf
DMP2067LVTQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMP2067LVTQ-7 DMP2067LVTQ.pdf
DMP2067LVTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.2 EUR
6000+0.19 EUR
15000+0.18 EUR
Mindestbestellmenge: 3000
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SMAJ64CA-13-F SMAJ5.0CA-SMAJ200CA.pdf
SMAJ64CA-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 64VWM 103VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.9A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 210000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.15 EUR
10000+0.14 EUR
25000+0.13 EUR
50000+0.11 EUR
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SMAJ64CA-13-F SMAJ5.0CA-SMAJ200CA.pdf
SMAJ64CA-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 64VWM 103VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.9A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 214740 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
35+0.5 EUR
100+0.25 EUR
500+0.22 EUR
1000+0.17 EUR
2000+0.16 EUR
Mindestbestellmenge: 25
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DMNH4026SSD-13 DMNH4026SSD.pdf
DMNH4026SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 7.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.51 EUR
5000+0.49 EUR
12500+0.45 EUR
Mindestbestellmenge: 2500
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DMNH4026SSD-13 DMNH4026SSD.pdf
DMNH4026SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 7.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 17030 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
16+1.17 EUR
100+0.81 EUR
500+0.68 EUR
1000+0.58 EUR
Mindestbestellmenge: 13
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DMC4040SSDQ-13 DMC4040SSDQ.pdf
DMC4040SSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 40V 7.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 17.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 20V
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMC4040SSDQ-13 DMC4040SSDQ.pdf
DMC4040SSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 40V 7.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 17.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 20V
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2335 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.88 EUR
15+1.23 EUR
100+0.87 EUR
500+0.7 EUR
1000+0.64 EUR
Mindestbestellmenge: 10
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AZ1084CD-2.5TRG1 AZ1084C.pdf
AZ1084CD-2.5TRG1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 2.5V 5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 2.5V
PSRR: 72dB (120Hz)
Voltage Dropout (Max): 1.5V @ 4.5A
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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AZ1084CD-2.5TRG1 AZ1084C.pdf
AZ1084CD-2.5TRG1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 2.5V 5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 2.5V
PSRR: 72dB (120Hz)
Voltage Dropout (Max): 1.5V @ 4.5A
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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SMF4L43AQ-7 SMF4L5.0CAQ-SMF4L200CAQ.pdf
SMF4L43AQ-7
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
6000+0.15 EUR
9000+0.14 EUR
Mindestbestellmenge: 3000
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SMCJ54AQ-13-F SMCJ5.0CAQ-SMCJ200CAQ.pdf
SMCJ54AQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 54VWM 87.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ75CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ75CAQ-13-F
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT585B5V6TQ-13 BZT585B5V1TQ-BZT585B43TQ.pdf
BZT585B5V6TQ-13
Hersteller: Diodes Incorporated
Description: TIGHT TOLERANCE ZENER DIODE SOD5
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.065 EUR
20000+0.06 EUR
30000+0.057 EUR
50000+0.054 EUR
70000+0.052 EUR
100000+0.051 EUR
Mindestbestellmenge: 10000
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S10KC-13 S10JC-S10MC.pdf
S10KC-13
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 800V 10A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.4 EUR
6000+0.38 EUR
9000+0.35 EUR
Mindestbestellmenge: 3000
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DMTH47M2SPSWQ-13 DMTH47M2SPSWQ.pdf
DMTH47M2SPSWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PI7C9X2G404ELZXAEX PI7C9X2G404EL.pdf
PI7C9X2G404ELZXAEX
Hersteller: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 136AQFN
Packaging: Tape & Reel (TR)
Package / Case: 136-VFQFN Dual Rows, Exposed Pad
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 4-Port/4-Lane
Supplier Device Package: 136-aQFN (10x10)
Produkt ist nicht verfügbar
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