Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74816) > Seite 643 nach 1247
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| LZ52C8V2W | Diodes Incorporated |
Description: ZENER DIODE SOD123 T&R 5KTolerance: ±2% Packaging: Cut Tape (CT) Package / Case: 1206 (3216 Metric) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: 1206 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V |
Produkt ist nicht verfügbar |
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| LZ52C33W | Diodes Incorporated |
Description: ZENER DIODE SOD123 T&R 5KTolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: 1206 (3216 Metric) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: 1206 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 24 V |
Produkt ist nicht verfügbar |
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| LZ52C33W | Diodes Incorporated |
Description: ZENER DIODE SOD123 T&R 5KTolerance: ±2% Packaging: Cut Tape (CT) Package / Case: 1206 (3216 Metric) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: 1206 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 24 V |
Produkt ist nicht verfügbar |
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| LZ52C13W | Diodes Incorporated |
Description: ZENER DIODE SOD123 T&R 5KTolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: 1206 (3216 Metric) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 26 Ohms Supplier Device Package: 1206 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 10 V |
Produkt ist nicht verfügbar |
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B2100AE-13-2477 | Diodes Incorporated |
Description: DIODE SCHOTTKY 100V 2A SMA Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 70pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 7 µA @ 100 V |
Produkt ist nicht verfügbar |
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B2100A-13-F-2477 | Diodes Incorporated |
Description: DIODE SCHOTTKY 100V 2A SMA Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 70pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 20 µA @ 100 V |
Produkt ist nicht verfügbar |
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GBJ2508_HF | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 800V 25A GBJ Packaging: Tube Package / Case: 4-SIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
auf Bestellung 188265 Stücke: Lieferzeit 10-14 Tag (e) |
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TT10J-13 | Diodes Incorporated |
Description: MEDIUM/HIGH POWER BRIDGE TTL T&R Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TTL Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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TT10K-13 | Diodes Incorporated |
Description: MEDIUM/HIGH POWER BRIDGE TTL T&R Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TTL Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
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3.0SMCJ6.0A-13 | Diodes Incorporated |
Description: TRANSIENT VOLTAGE SUPPRESSOR SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 291.3A Voltage - Reverse Standoff (Typ): 6V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.67V Voltage - Clamping (Max) @ Ipp: 10.3V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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3.0SMCJ6.0AQ-13 | Diodes Incorporated |
Description: TRANSIENT VOLTAGE SUPPRESSOR SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 291.3A Voltage - Reverse Standoff (Typ): 6V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.67V Voltage - Clamping (Max) @ Ipp: 10.3V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DSC04C065D1-13 | Diodes Incorporated |
Description: DIODE SIL CARBIDE 650V 4A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 150pF @ 100mV, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 170 µA @ 650 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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DSC04C065D1-13 | Diodes Incorporated |
Description: DIODE SIL CARBIDE 650V 4A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 150pF @ 100mV, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 170 µA @ 650 V |
auf Bestellung 9838 Stücke: Lieferzeit 10-14 Tag (e) |
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DSC06C065D1-13 | Diodes Incorporated |
Description: DIODE SIL CARBIDE 650V 6A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 184pF @ 100mV, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 170 µA @ 650 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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DSC06C065D1-13 | Diodes Incorporated |
Description: DIODE SIL CARBIDE 650V 6A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 184pF @ 100mV, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 170 µA @ 650 V |
auf Bestellung 9990 Stücke: Lieferzeit 10-14 Tag (e) |
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DSC08C065D1-13 | Diodes Incorporated |
Description: DIODE SIL CARBIDE 650V 8A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 278pF @ 100mV, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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DSC08C065D1-13 | Diodes Incorporated |
Description: DIODE SIL CARBIDE 650V 8A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 278pF @ 100mV, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
auf Bestellung 14995 Stücke: Lieferzeit 10-14 Tag (e) |
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DSC08A065D1-13 | Diodes Incorporated |
Description: DIODE SIL CARBIDE 650V 8A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 348pF @ 100mV, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 230 µA @ 650 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DSC08A065D1-13 | Diodes Incorporated |
Description: DIODE SIL CARBIDE 650V 8A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 348pF @ 100mV, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 230 µA @ 650 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DSC10C065D1-13 | Diodes Incorporated |
Description: DIODE SIL CARBIDE 650V 10A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 348pF @ 100mV, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 230 µA @ 650 V |
auf Bestellung 17500 Stücke: Lieferzeit 10-14 Tag (e) |
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DSC10C065D1-13 | Diodes Incorporated |
Description: DIODE SIL CARBIDE 650V 10A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 348pF @ 100mV, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 230 µA @ 650 V |
auf Bestellung 19975 Stücke: Lieferzeit 10-14 Tag (e) |
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DSC04A065D1-13 | Diodes Incorporated |
Description: DIODE SIL CARBIDE 650V 4A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 184pF @ 100mV, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 170 µA @ 650 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DSC04A065D1-13 | Diodes Incorporated |
Description: DIODE SIL CARBIDE 650V 4A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 184pF @ 100mV, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 170 µA @ 650 V |
auf Bestellung 12455 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBJ85CAQ-13-F | Diodes Incorporated |
Description: TVS DIODE 85VWM 137VC SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 4.4A Voltage - Reverse Standoff (Typ): 85V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 94.4V Voltage - Clamping (Max) @ Ipp: 137V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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74AUP1G58FW4-7 | Diodes Incorporated |
Description: IC GATE SGL GATE X2-DFN1010-6Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Output Type: Single-Ended Mounting Type: Surface Mount Logic Type: Configurable Multiple Function Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.8V ~ 3.6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 3 Schmitt Trigger Input: No Supplier Device Package: X2-DFN1010-6 Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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AP3303S9-13 | Diodes Incorporated |
Description: ACDC SINGLE ENDED CONT SSOP-9Packaging: Tape & Reel (TR) Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Mounting Type: Surface Mount Voltage - Input: 120V Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 10V ~ 28V Applications: Switching AC-DC Adapter/Charger Supplier Device Package: 9-SSOP Current - Supply: 2.2 mA DigiKey Programmable: Not Verified |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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AP3303S9-13 | Diodes Incorporated |
Description: ACDC SINGLE ENDED CONT SSOP-9Packaging: Cut Tape (CT) Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Mounting Type: Surface Mount Voltage - Input: 120V Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 10V ~ 28V Applications: Switching AC-DC Adapter/Charger Supplier Device Package: 9-SSOP Current - Supply: 2.2 mA DigiKey Programmable: Not Verified |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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B240BE-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 2A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 93pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
Produkt ist nicht verfügbar |
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| FF4910001 | Diodes Incorporated |
Description: CRYSTAL 49.1520MHZ 20PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 20pF Size / Dimension: 0.157" L x 0.098" W (4.00mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±20ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Height - Seated (Max): 0.030" (0.75mm) ESR (Equivalent Series Resistance): 30 Ohms Frequency: 49.152 MHz |
Produkt ist nicht verfügbar |
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DMP3028LPSQ-7 | Diodes Incorporated |
Description: MOSFET P-CHAN 30VSOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Power Dissipation (Max): 1.28W Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DMP3028LPSQ-7 | Diodes Incorporated |
Description: MOSFET P-CHAN 30VSOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Power Dissipation (Max): 1.28W Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BC847BVNQ-7 | Diodes Incorporated |
Description: GENERAL PURPOSE TRANSISTOR SOT56Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Complementary Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 312000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC847BVNQ-7 | Diodes Incorporated |
Description: GENERAL PURPOSE TRANSISTOR SOT56Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Complementary Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 312000 Stücke: Lieferzeit 10-14 Tag (e) |
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AH9485-WUF-7 | Diodes Incorporated |
Description: IC MOTOR DRIVER 2V-6V 6TSOT26FPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 300mA Interface: PWM Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 2V ~ 6V Applications: Fan Motor Driver Technology: Power MOSFET Voltage - Load: 2V ~ 6V Supplier Device Package: TSOT-26F Motor Type - AC, DC: Brushless DC (BLDC) |
Produkt ist nicht verfügbar |
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AH9485-WUF-7 | Diodes Incorporated |
Description: IC MOTOR DRIVER 2V-6V 6TSOT26FPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 300mA Interface: PWM Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 2V ~ 6V Applications: Fan Motor Driver Technology: Power MOSFET Voltage - Load: 2V ~ 6V Supplier Device Package: TSOT-26F Motor Type - AC, DC: Brushless DC (BLDC) |
auf Bestellung 2996 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS40-4-7-F | Diodes Incorporated |
Description: DIODE ARR SCHOTT 40V 200MA SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 200 nA @ 30 V |
Produkt ist nicht verfügbar |
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DMP6250SEQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V SOT223 T&RPackaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V Power Dissipation (Max): 1.8W (Ta), 14W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 260000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6250SFDF-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V-60V U-DFN2020-Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 2A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 20 V |
auf Bestellung 70000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6250SFDF-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V-60V U-DFN2020-Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 2A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 20 V |
Produkt ist nicht verfügbar |
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MMBZ5246BW-7-F | Diodes Incorporated |
Description: DIODE ZENER 16V 200MW SOT323Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: SOT-323 Grade: Automotive Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 12 V Qualification: AEC-Q101 |
auf Bestellung 63000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBZ5246BW-7-F | Diodes Incorporated |
Description: DIODE ZENER 16V 200MW SOT323Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: SOT-323 Grade: Automotive Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 12 V Qualification: AEC-Q101 |
auf Bestellung 65700 Stücke: Lieferzeit 10-14 Tag (e) |
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AP7350-18CF4-7 | Diodes Incorporated |
Description: IC REG LIN 1.8V 150MA X2WLB0606Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 400 nA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: X2-WLB0606-4 Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Voltage Dropout (Max): 0.6V @ 150mA Protection Features: Current Limit |
auf Bestellung 657000 Stücke: Lieferzeit 10-14 Tag (e) |
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AP7350-18CF4-7 | Diodes Incorporated |
Description: IC REG LIN 1.8V 150MA X2WLB0606Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 400 nA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: X2-WLB0606-4 Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Voltage Dropout (Max): 0.6V @ 150mA Protection Features: Current Limit |
auf Bestellung 659961 Stücke: Lieferzeit 10-14 Tag (e) |
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AP7350D-18CF4-7 | Diodes Incorporated |
Description: IC REG LIN 1.8V 150MA X2WLB0606Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 400 nA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: X2-WLB0606-4 Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Voltage Dropout (Max): 0.6V @ 150mA Protection Features: Current Limit |
auf Bestellung 231000 Stücke: Lieferzeit 10-14 Tag (e) |
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AP7350D-18CF4-7 | Diodes Incorporated |
Description: IC REG LIN 1.8V 150MA X2WLB0606Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 400 nA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: X2-WLB0606-4 Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Voltage Dropout (Max): 0.6V @ 150mA Protection Features: Current Limit |
auf Bestellung 231000 Stücke: Lieferzeit 10-14 Tag (e) |
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AP7350D-30CF4-7 | Diodes Incorporated |
Description: IC REG LIN 3V 150MA X2WLB0606-4Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 400 nA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: X2-WLB0606-4 Voltage - Output (Min/Fixed): 3V Control Features: Enable Voltage Dropout (Max): 0.35V @ 150mA Protection Features: Current Limit |
auf Bestellung 213000 Stücke: Lieferzeit 10-14 Tag (e) |
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AP7350D-30CF4-7 | Diodes Incorporated |
Description: IC REG LIN 3V 150MA X2WLB0606-4Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 400 nA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: X2-WLB0606-4 Voltage - Output (Min/Fixed): 3V Control Features: Enable Voltage Dropout (Max): 0.35V @ 150mA Protection Features: Current Limit |
auf Bestellung 213000 Stücke: Lieferzeit 10-14 Tag (e) |
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| JT2551R0022.579200 | Diodes Incorporated |
Description: XO OSCILLATOR SMD Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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DXT5551P5Q-13 | Diodes Incorporated |
Description: PWR HI VOLTAGE TRANSISTOR PDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 130MHz Supplier Device Package: PowerDI™ 5 Grade: Automotive Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 2.25 W Qualification: AEC-Q101 |
auf Bestellung 410000 Stücke: Lieferzeit 10-14 Tag (e) |
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DXT5551P5Q-13 | Diodes Incorporated |
Description: PWR HI VOLTAGE TRANSISTOR PDI5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 130MHz Supplier Device Package: PowerDI™ 5 Grade: Automotive Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 2.25 W Qualification: AEC-Q101 |
auf Bestellung 413993 Stücke: Lieferzeit 10-14 Tag (e) |
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TT6M | Diodes Incorporated |
Description: MEDIUM/HIGH POWER BRIDGE TT T&RPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TTL Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TT6JL-13 | Diodes Incorporated |
Description: Medium/High Power Bridge TTL T&RPackaging: Bulk Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TT Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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KBJL606-TU | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 600V 6A KBJLPackaging: Tube Package / Case: 4-SIP, KBJL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBJL Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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KBJL610-TU | Diodes Incorporated |
Description: MEDIUM/HIGH POWER BRIDGE KBJL TUPackaging: Tube Package / Case: 4-SIP, KBJL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBJL Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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KBJL608-TU | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 800V 6A KBJLPackaging: Tube Package / Case: 4-SIP, KBJL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBJL Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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TT6JL | Diodes Incorporated |
Description: MEDIUM/HIGH POWER BRIDGE TTL T&RPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TT Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AP64202SP-EVM | Diodes Incorporated |
Description: EVAL BOARD FOR AP64202Packaging: Box Voltage - Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V or 12V Voltage - Input: 3.8V ~ 40V Current - Output: 2A Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: AP64202 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3061SVTQ-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 3.4A TSOT26Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 880mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 32784 Stücke: Lieferzeit 10-14 Tag (e) |
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DDZ9697T-7 | Diodes Incorporated |
Description: DIODE ZENER 10V 150MW SOD523Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Supplier Device Package: SOD-523 Power - Max: 150 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 7.6 V |
auf Bestellung 972000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDZ9697T-7 | Diodes Incorporated |
Description: DIODE ZENER 10V 150MW SOD523Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Supplier Device Package: SOD-523 Power - Max: 150 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 7.6 V |
auf Bestellung 974180 Stücke: Lieferzeit 10-14 Tag (e) |
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| LZ52C8V2W |
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Hersteller: Diodes Incorporated
Description: ZENER DIODE SOD123 T&R 5K
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: 1206
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
Description: ZENER DIODE SOD123 T&R 5K
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: 1206
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LZ52C33W |
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Hersteller: Diodes Incorporated
Description: ZENER DIODE SOD123 T&R 5K
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: 1206
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 24 V
Description: ZENER DIODE SOD123 T&R 5K
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: 1206
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 24 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LZ52C33W |
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Hersteller: Diodes Incorporated
Description: ZENER DIODE SOD123 T&R 5K
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: 1206
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 24 V
Description: ZENER DIODE SOD123 T&R 5K
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: 1206
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 24 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LZ52C13W |
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Hersteller: Diodes Incorporated
Description: ZENER DIODE SOD123 T&R 5K
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 26 Ohms
Supplier Device Package: 1206
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Description: ZENER DIODE SOD123 T&R 5K
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 26 Ohms
Supplier Device Package: 1206
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B2100AE-13-2477 |
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 2A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 7 µA @ 100 V
Description: DIODE SCHOTTKY 100V 2A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 7 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B2100A-13-F-2477 |
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 2A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Description: DIODE SCHOTTKY 100V 2A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBJ2508_HF |
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 25A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 25A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 188265 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.51 EUR |
| TT10J-13 |
Hersteller: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE TTL T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TTL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: MEDIUM/HIGH POWER BRIDGE TTL T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TTL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TT10K-13 |
Hersteller: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE TTL T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TTL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: MEDIUM/HIGH POWER BRIDGE TTL T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TTL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 3.0SMCJ6.0A-13 |
![]() |
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 291.3A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 291.3A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 3.0SMCJ6.0AQ-13 |
![]() |
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 291.3A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 291.3A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSC04C065D1-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 150pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 150pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.74 EUR |
| DSC04C065D1-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 150pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 150pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
auf Bestellung 9838 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.69 EUR |
| 11+ | 1.7 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.83 EUR |
| DSC06C065D1-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 184pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 184pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.83 EUR |
| DSC06C065D1-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 184pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 184pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
auf Bestellung 9990 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.92 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.26 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.93 EUR |
| DSC08C065D1-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 278pF @ 100mV, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 278pF @ 100mV, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.13 EUR |
| DSC08C065D1-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 278pF @ 100mV, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 278pF @ 100mV, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 14995 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.66 EUR |
| 10+ | 2.35 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.27 EUR |
| DSC08A065D1-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 348pF @ 100mV, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 348pF @ 100mV, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.39 EUR |
| DSC08A065D1-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 348pF @ 100mV, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 348pF @ 100mV, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.24 EUR |
| 10+ | 2.74 EUR |
| 100+ | 1.89 EUR |
| 500+ | 1.54 EUR |
| DSC10C065D1-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 348pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 348pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.27 EUR |
| DSC10C065D1-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 348pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 348pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
auf Bestellung 19975 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.28 EUR |
| 10+ | 2.76 EUR |
| 100+ | 1.9 EUR |
| 500+ | 1.56 EUR |
| DSC04A065D1-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 184pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 184pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.83 EUR |
| DSC04A065D1-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 184pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 184pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
auf Bestellung 12455 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.92 EUR |
| 10+ | 1.86 EUR |
| 100+ | 1.26 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.93 EUR |
| SMBJ85CAQ-13-F |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 85VWM 137VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 85VWM 137VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| 74AUP1G58FW4-7 |
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Hersteller: Diodes Incorporated
Description: IC GATE SGL GATE X2-DFN1010-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Schmitt Trigger Input: No
Supplier Device Package: X2-DFN1010-6
Number of Circuits: 1
Description: IC GATE SGL GATE X2-DFN1010-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Schmitt Trigger Input: No
Supplier Device Package: X2-DFN1010-6
Number of Circuits: 1
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| AP3303S9-13 |
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Hersteller: Diodes Incorporated
Description: ACDC SINGLE ENDED CONT SSOP-9
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Voltage - Input: 120V
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 10V ~ 28V
Applications: Switching AC-DC Adapter/Charger
Supplier Device Package: 9-SSOP
Current - Supply: 2.2 mA
DigiKey Programmable: Not Verified
Description: ACDC SINGLE ENDED CONT SSOP-9
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Voltage - Input: 120V
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 10V ~ 28V
Applications: Switching AC-DC Adapter/Charger
Supplier Device Package: 9-SSOP
Current - Supply: 2.2 mA
DigiKey Programmable: Not Verified
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.57 EUR |
| AP3303S9-13 |
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Hersteller: Diodes Incorporated
Description: ACDC SINGLE ENDED CONT SSOP-9
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Voltage - Input: 120V
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 10V ~ 28V
Applications: Switching AC-DC Adapter/Charger
Supplier Device Package: 9-SSOP
Current - Supply: 2.2 mA
DigiKey Programmable: Not Verified
Description: ACDC SINGLE ENDED CONT SSOP-9
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Voltage - Input: 120V
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 10V ~ 28V
Applications: Switching AC-DC Adapter/Charger
Supplier Device Package: 9-SSOP
Current - Supply: 2.2 mA
DigiKey Programmable: Not Verified
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.46 EUR |
| 14+ | 1.29 EUR |
| 25+ | 1.21 EUR |
| 100+ | 0.99 EUR |
| 250+ | 0.92 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.62 EUR |
| B240BE-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Produkt ist nicht verfügbar
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| FF4910001 |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 49.1520MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.157" L x 0.098" W (4.00mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.030" (0.75mm)
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 49.152 MHz
Description: CRYSTAL 49.1520MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.157" L x 0.098" W (4.00mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.030" (0.75mm)
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 49.152 MHz
Produkt ist nicht verfügbar
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| DMP3028LPSQ-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CHAN 30VSOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.28W
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CHAN 30VSOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.28W
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V
Qualification: AEC-Q101
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| DMP3028LPSQ-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CHAN 30VSOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.28W
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CHAN 30VSOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.28W
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BC847BVNQ-7 |
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Hersteller: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR SOT56
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Description: GENERAL PURPOSE TRANSISTOR SOT56
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 312000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.19 EUR |
| 6000+ | 0.18 EUR |
| 9000+ | 0.16 EUR |
| 75000+ | 0.15 EUR |
| BC847BVNQ-7 |
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Hersteller: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR SOT56
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Description: GENERAL PURPOSE TRANSISTOR SOT56
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 312000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 0.7 EUR |
| 33+ | 0.54 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.2 EUR |
| AH9485-WUF-7 |
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Hersteller: Diodes Incorporated
Description: IC MOTOR DRIVER 2V-6V 6TSOT26F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 300mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2V ~ 6V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 2V ~ 6V
Supplier Device Package: TSOT-26F
Motor Type - AC, DC: Brushless DC (BLDC)
Description: IC MOTOR DRIVER 2V-6V 6TSOT26F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 300mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2V ~ 6V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 2V ~ 6V
Supplier Device Package: TSOT-26F
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| AH9485-WUF-7 |
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Hersteller: Diodes Incorporated
Description: IC MOTOR DRIVER 2V-6V 6TSOT26F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 300mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2V ~ 6V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 2V ~ 6V
Supplier Device Package: TSOT-26F
Motor Type - AC, DC: Brushless DC (BLDC)
Description: IC MOTOR DRIVER 2V-6V 6TSOT26F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 300mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2V ~ 6V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 2V ~ 6V
Supplier Device Package: TSOT-26F
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2996 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.25 EUR |
| 19+ | 0.96 EUR |
| 25+ | 0.83 EUR |
| 50+ | 0.8 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.59 EUR |
| 1000+ | 0.52 EUR |
| BAS40-4-7-F |
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Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMP6250SEQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Power Dissipation (Max): 1.8W (Ta), 14W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Power Dissipation (Max): 1.8W (Ta), 14W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 260000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.25 EUR |
| 5000+ | 0.23 EUR |
| 7500+ | 0.22 EUR |
| 12500+ | 0.2 EUR |
| 25000+ | 0.19 EUR |
| 62500+ | 0.18 EUR |
| DMP6250SFDF-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 2A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 20 V
Description: MOSFET BVDSS: 41V-60V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 2A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 20 V
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.4 EUR |
| DMP6250SFDF-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 2A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 20 V
Description: MOSFET BVDSS: 41V-60V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 2A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBZ5246BW-7-F |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 16V 200MW SOT323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
Description: DIODE ZENER 16V 200MW SOT323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.1 EUR |
| 6000+ | 0.096 EUR |
| 9000+ | 0.083 EUR |
| 30000+ | 0.081 EUR |
| MMBZ5246BW-7-F |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 16V 200MW SOT323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
Description: DIODE ZENER 16V 200MW SOT323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 65700 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 0.55 EUR |
| 46+ | 0.39 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.12 EUR |
| AP7350-18CF4-7 |
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Hersteller: Diodes Incorporated
Description: IC REG LIN 1.8V 150MA X2WLB0606
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 400 nA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-WLB0606-4
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Current Limit
Description: IC REG LIN 1.8V 150MA X2WLB0606
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 400 nA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-WLB0606-4
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Current Limit
auf Bestellung 657000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.31 EUR |
| 6000+ | 0.29 EUR |
| 9000+ | 0.28 EUR |
| 15000+ | 0.27 EUR |
| 21000+ | 0.26 EUR |
| 30000+ | 0.25 EUR |
| AP7350-18CF4-7 |
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Hersteller: Diodes Incorporated
Description: IC REG LIN 1.8V 150MA X2WLB0606
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 400 nA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-WLB0606-4
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Current Limit
Description: IC REG LIN 1.8V 150MA X2WLB0606
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 400 nA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-WLB0606-4
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Current Limit
auf Bestellung 659961 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.28 EUR |
| 22+ | 0.8 EUR |
| 27+ | 0.67 EUR |
| 100+ | 0.52 EUR |
| 250+ | 0.44 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| AP7350D-18CF4-7 |
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Hersteller: Diodes Incorporated
Description: IC REG LIN 1.8V 150MA X2WLB0606
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 400 nA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-WLB0606-4
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Current Limit
Description: IC REG LIN 1.8V 150MA X2WLB0606
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 400 nA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-WLB0606-4
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Current Limit
auf Bestellung 231000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.31 EUR |
| 6000+ | 0.29 EUR |
| 9000+ | 0.28 EUR |
| 15000+ | 0.27 EUR |
| 21000+ | 0.26 EUR |
| 30000+ | 0.25 EUR |
| AP7350D-18CF4-7 |
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Hersteller: Diodes Incorporated
Description: IC REG LIN 1.8V 150MA X2WLB0606
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 400 nA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-WLB0606-4
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Current Limit
Description: IC REG LIN 1.8V 150MA X2WLB0606
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 400 nA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-WLB0606-4
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Current Limit
auf Bestellung 231000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.28 EUR |
| 22+ | 0.8 EUR |
| 27+ | 0.67 EUR |
| 100+ | 0.52 EUR |
| 250+ | 0.44 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| AP7350D-30CF4-7 |
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Hersteller: Diodes Incorporated
Description: IC REG LIN 3V 150MA X2WLB0606-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 400 nA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-WLB0606-4
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.35V @ 150mA
Protection Features: Current Limit
Description: IC REG LIN 3V 150MA X2WLB0606-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 400 nA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-WLB0606-4
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.35V @ 150mA
Protection Features: Current Limit
auf Bestellung 213000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.31 EUR |
| 6000+ | 0.29 EUR |
| 9000+ | 0.28 EUR |
| 15000+ | 0.27 EUR |
| 21000+ | 0.26 EUR |
| 30000+ | 0.25 EUR |
| AP7350D-30CF4-7 |
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Hersteller: Diodes Incorporated
Description: IC REG LIN 3V 150MA X2WLB0606-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 400 nA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-WLB0606-4
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.35V @ 150mA
Protection Features: Current Limit
Description: IC REG LIN 3V 150MA X2WLB0606-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 400 nA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-WLB0606-4
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.35V @ 150mA
Protection Features: Current Limit
auf Bestellung 213000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.28 EUR |
| 22+ | 0.8 EUR |
| 27+ | 0.67 EUR |
| 100+ | 0.52 EUR |
| 250+ | 0.44 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| DXT5551P5Q-13 |
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Hersteller: Diodes Incorporated
Description: PWR HI VOLTAGE TRANSISTOR PDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Grade: Automotive
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 2.25 W
Qualification: AEC-Q101
Description: PWR HI VOLTAGE TRANSISTOR PDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Grade: Automotive
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 2.25 W
Qualification: AEC-Q101
auf Bestellung 410000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.31 EUR |
| 10000+ | 0.28 EUR |
| DXT5551P5Q-13 |
![]() |
Hersteller: Diodes Incorporated
Description: PWR HI VOLTAGE TRANSISTOR PDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Grade: Automotive
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 2.25 W
Qualification: AEC-Q101
Description: PWR HI VOLTAGE TRANSISTOR PDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Grade: Automotive
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 2.25 W
Qualification: AEC-Q101
auf Bestellung 413993 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 1.13 EUR |
| 24+ | 0.75 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.37 EUR |
| 2000+ | 0.34 EUR |
| TT6M |
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Hersteller: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE TT T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TTL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: MEDIUM/HIGH POWER BRIDGE TT T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TTL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TT6JL-13 |
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Hersteller: Diodes Incorporated
Description: Medium/High Power Bridge TTL T&R
Packaging: Bulk
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TT
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: Medium/High Power Bridge TTL T&R
Packaging: Bulk
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TT
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1500+ | 1.12 EUR |
| KBJL606-TU |
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Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 600V 6A KBJL
Packaging: Tube
Package / Case: 4-SIP, KBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 6A KBJL
Packaging: Tube
Package / Case: 4-SIP, KBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBJL610-TU |
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Hersteller: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE KBJL TU
Packaging: Tube
Package / Case: 4-SIP, KBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: MEDIUM/HIGH POWER BRIDGE KBJL TU
Packaging: Tube
Package / Case: 4-SIP, KBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBJL608-TU |
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Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 6A KBJL
Packaging: Tube
Package / Case: 4-SIP, KBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 6A KBJL
Packaging: Tube
Package / Case: 4-SIP, KBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 1.18 EUR |
| TT6JL |
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Hersteller: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE TTL T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TT
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: MEDIUM/HIGH POWER BRIDGE TTL T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TT
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AP64202SP-EVM |
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Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP64202
Packaging: Box
Voltage - Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V or 12V
Voltage - Input: 3.8V ~ 40V
Current - Output: 2A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP64202
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Description: EVAL BOARD FOR AP64202
Packaging: Box
Voltage - Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V or 12V
Voltage - Input: 3.8V ~ 40V
Current - Output: 2A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP64202
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 59.1 EUR |
| DMN3061SVTQ-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 3.4A TSOT26
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 3.4A TSOT26
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 32784 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 0.76 EUR |
| 33+ | 0.55 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.19 EUR |
| 3000+ | 0.17 EUR |
| 12000+ | 0.15 EUR |
| DDZ9697T-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 10V 150MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Supplier Device Package: SOD-523
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.6 V
Description: DIODE ZENER 10V 150MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Supplier Device Package: SOD-523
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.6 V
auf Bestellung 972000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.13 EUR |
| 9000+ | 0.11 EUR |
| 75000+ | 0.09 EUR |
| 150000+ | 0.088 EUR |
| DDZ9697T-7 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE ZENER 10V 150MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Supplier Device Package: SOD-523
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.6 V
Description: DIODE ZENER 10V 150MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Supplier Device Package: SOD-523
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.6 V
auf Bestellung 974180 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 34+ | 0.52 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.16 EUR |




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