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AP393AM8G-13 AP393AM8G-13 Diodes Incorporated AP393A.pdf Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: CMOS, DTL, ECL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 8mV @ 5V
Current - Input Bias (Max): 0.4µA @ 5V
Current - Output (Typ): 16mA @ 5V
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17500+0.3 EUR
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AP393AM8G-13 AP393AM8G-13 Diodes Incorporated AP393A.pdf Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: CMOS, DTL, ECL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 8mV @ 5V
Current - Input Bias (Max): 0.4µA @ 5V
Current - Output (Typ): 16mA @ 5V
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1000+0.41 EUR
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BS107PSTZ BS107PSTZ Diodes Incorporated BS107P.pdf Description: MOSFET N-CH 200V 120MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 5V
Power Dissipation (Max): 500mW (Ta)
Supplier Device Package: E-Line (TO-92 compatible)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Qualification: AEC-Q101
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DMTH69M8LFVWQ-7 DMTH69M8LFVWQ-7 Diodes Incorporated DMTH69M8LFVWQ.pdf Description: MOSFET BVDSS: 41V-60V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
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DMTH69M8LFVWQ-7 DMTH69M8LFVWQ-7 Diodes Incorporated DMTH69M8LFVWQ.pdf Description: MOSFET BVDSS: 41V-60V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
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LSF0204ZB14-13 LSF0204ZB14-13 Diodes Incorporated LSF0204.pdf Description: LOGIC ULS V-QFN3535-14 T&R 5K
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 14-QFN (3.5x3.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 5.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
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LSF0204T14-13 LSF0204T14-13 Diodes Incorporated LSF0204.pdf Description: LOGIC ULS TSSOP-14 T&R 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 14-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 4.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
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LSF0204QT14-13 LSF0204QT14-13 Diodes Incorporated LSF0204Q.pdf Description: LOGIC ULS TSSOP-14 T&R 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 14-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 4.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q100
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D12V0S1U2LP1610Q-7 D12V0S1U2LP1610Q-7 Diodes Incorporated D12V0S1U2LP1610Q.pdf Description: TVS DIODE 12VWM 20V UDFN16102
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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D12V0S1U2LP1610Q-7 D12V0S1U2LP1610Q-7 Diodes Incorporated D12V0S1U2LP1610Q.pdf Description: TVS DIODE 12VWM 20V UDFN16102
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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LM4040B33FTA LM4040B33FTA Diodes Incorporated LM4040.pdf Description: IC VREF SHUNT 0.2% SOT23
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.3V
Noise - 10Hz to 10kHz: 35µVrms
Current - Cathode: 70 µA
Current - Output: 15 mA
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LM4040B33FTA LM4040B33FTA Diodes Incorporated LM4040.pdf Description: IC VREF SHUNT 0.2% SOT23
Tolerance: ±0.2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.3V
Noise - 10Hz to 10kHz: 35µVrms
Current - Cathode: 70 µA
Current - Output: 15 mA
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FL1690007 FL1690007 Diodes Incorporated FL.pdf Description: CRYSTAL 16.9344MHZ 16PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 16pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±50ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 16.9344 MHz
Produkt ist nicht verfügbar
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SMF4L18CAQ-7 SMF4L18CAQ-7 Diodes Incorporated SMF4L5.0CAQ-SMF4L200CAQ.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-219AA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH8008LPSQ-13 DMTH8008LPSQ-13 Diodes Incorporated DMTH8008LPSQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH8008LPSQ-13 DMTH8008LPSQ-13 Diodes Incorporated DMTH8008LPSQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1894 Stücke:
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500+0.64 EUR
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DMTH32M5LPSQ-13 DMTH32M5LPSQ-13 Diodes Incorporated DMTH32M5LPSQ.pdf Description: MOSFET N-CH 30V 170A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
Qualification: AEC-Q101
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DMTH32M5LPSQ-13 DMTH32M5LPSQ-13 Diodes Incorporated DMTH32M5LPSQ.pdf Description: MOSFET N-CH 30V 170A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
Qualification: AEC-Q101
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DJT4030P-13 DJT4030P-13 Diodes Incorporated ds31590.pdf Description: TRANS PNP 40V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.2 W
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DJT4030P-13 DJT4030P-13 Diodes Incorporated ds31590.pdf Description: TRANS PNP 40V 3A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.2 W
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DMN31D4UFZ-7B DMN31D4UFZ-7B Diodes Incorporated DMN31D4UFZ.pdf Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
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10000+0.05 EUR
20000+0.045 EUR
30000+0.043 EUR
50000+0.04 EUR
70000+0.038 EUR
100000+0.037 EUR
250000+0.033 EUR
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DMN31D4UFZ-7B DMN31D4UFZ-7B Diodes Incorporated DMN31D4UFZ.pdf Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
auf Bestellung 1599389 Stücke:
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1000+0.076 EUR
2000+0.067 EUR
5000+0.058 EUR
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DMN31D6UT-7 DMN31D6UT-7 Diodes Incorporated DMN31D6UT.pdf Description: MOSFET N-CH 30V 350MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
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DMN31D6UT-7 DMN31D6UT-7 Diodes Incorporated DMN31D6UT.pdf Description: MOSFET N-CH 30V 350MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
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DMN31D5L-13 DMN31D5L-13 Diodes Incorporated DMN31D5L.pdf Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 420000 Stücke:
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DMN31D5L-13 DMN31D5L-13 Diodes Incorporated DMN31D5L.pdf Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
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DMN31D5L-7 DMN31D5L-7 Diodes Incorporated DMN31D5L.pdf Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
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DMN31D5L-7 DMN31D5L-7 Diodes Incorporated DMN31D5L.pdf Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
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DMN31D5UDAQ-7B DMN31D5UDAQ-7B Diodes Incorporated DMN31D5UDAQ.pdf Description: MOSFET 2N-CH 30V 0.4A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN31D5UDW-7 DMN31D5UDW-7 Diodes Incorporated DMN31D5UDW.pdf Description: MOSFET BVDSS: 25V~30V SOT363 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-363
Produkt ist nicht verfügbar
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DMN31D5UFZQ-7B DMN31D5UFZQ-7B Diodes Incorporated DMN31D5UFZQ.pdf Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 22.6 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH4014LPDWQ-13 DMTH4014LPDWQ-13 Diodes Incorporated DMTH4014LPDWQ.pdf Description: MOSFET 2N-CH 40V 10.6A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DXTN22040CFGQ-7 DXTN22040CFGQ-7 Diodes Incorporated DXTN22040CFGQ.pdf Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Qualification: AEC-Q101
auf Bestellung 19980 Stücke:
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DXTN22040DFGQ-7 DXTN22040DFGQ-7 Diodes Incorporated DXTN22040DFGQ.pdf Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Frequency - Transition: 198MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Qualification: AEC-Q101
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DXTN22040CFG-7 DXTN22040CFG-7 Diodes Incorporated DXTN22040CFG.pdf Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
auf Bestellung 21980 Stücke:
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DXTN22040DFG-7 DXTN22040DFG-7 Diodes Incorporated DXTN22040DFG.pdf Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Frequency - Transition: 198MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Produkt ist nicht verfügbar
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PI6LC48P25104LE PI6LC48P25104LE Diodes Incorporated PI6LC48P25104.pdf Description: 156.25MHZ LVPECL SYNTHESIZER
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 187.5MHz
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Main Purpose: Ethernet
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 8-TSSOP
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PI3EQX12908AZFEX PI3EQX12908AZFEX Diodes Incorporated PI3EQX12908A-pb.pdf Description: IC REDRIVER 12GBPS 8CHAN 54TQFN
Packaging: Tape & Reel (TR)
Package / Case: 54-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 12Gbps
Supplier Device Package: 54-TQFN (10x5.5)
Signal Conditioning: Input Equalization, Output De-Emphasis
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PI3EQX12908AZFEX PI3EQX12908AZFEX Diodes Incorporated PI3EQX12908A-pb.pdf Description: IC REDRIVER 12GBPS 8CHAN 54TQFN
Packaging: Cut Tape (CT)
Package / Case: 54-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 12Gbps
Supplier Device Package: 54-TQFN (10x5.5)
Signal Conditioning: Input Equalization, Output De-Emphasis
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DMT34M8LFDE-7 DMT34M8LFDE-7 Diodes Incorporated DMT34M8LFDE.pdf Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 15 V
Produkt ist nicht verfügbar
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DMP4013SPSQ-13 DMP4013SPSQ-13 Diodes Incorporated DMP4013SPSQ.pdf Description: MOSFET P-CH 40V 11A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Qualification: AEC-Q101
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DMP4013SPSQ-13 DMP4013SPSQ-13 Diodes Incorporated DMP4013SPSQ.pdf Description: MOSFET P-CH 40V 11A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 27648 Stücke:
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DMN2992UFB4Q-7B DMN2992UFB4Q-7B Diodes Incorporated DMN2992UFB4Q.pdf Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V
Qualification: AEC-Q101
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DMN2992UFB4Q-7B DMN2992UFB4Q-7B Diodes Incorporated DMN2992UFB4Q.pdf Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 244912 Stücke:
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ZXMS6008DN8-13 ZXMS6008DN8-13 Diodes Incorporated ZXMS6008DN8.pdf Description: LOW SIDE INTELLIFET SO-8 T&R 2.5
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
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ZXMS6008DN8Q-13 ZXMS6008DN8Q-13 Diodes Incorporated ZXMS6008DN8Q.pdf Description: LOW SIDE INTELLIFET SO-8 T&R 2.5
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
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SDR05F03T5-7 SDR05F03T5-7 Diodes Incorporated Description: DIODE SCHOTTKY 3V 50MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.1 ns
Technology: Schottky
Capacitance @ Vr, F: 0.52pF @ 200mV, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 3 V
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FL2500047 FL2500047 Diodes Incorporated FL.pdf Description: CRYSTAL 25.0000MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
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FL2500047 FL2500047 Diodes Incorporated FL.pdf Description: CRYSTAL 25.0000MHZ 18PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
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DDZ9684Q-7 DDZ9684Q-7 Diodes Incorporated ds30410.pdf Description: DIODE ZENER 3.3V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
Qualification: AEC-Q101
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DDZ9684Q-7 DDZ9684Q-7 Diodes Incorporated ds30410.pdf Description: DIODE ZENER 3.3V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
Qualification: AEC-Q101
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DDZ9689Q-7 DDZ9689Q-7 Diodes Incorporated ds30410.pdf Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
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DDZ9689Q-7 DDZ9689Q-7 Diodes Incorporated ds30410.pdf Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
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NX21100001 NX21100001 Diodes Incorporated NX21100001.pdf Description: XTAL OSC XO 10.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 10 MHz
Base Resonator: Crystal
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SMBJ11A-13-F SMBJ11A-13-F Diodes Incorporated ds19002.pdf Description: TVS DIODE 11V 18.2V SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ11A-13-F SMBJ11A-13-F Diodes Incorporated ds19002.pdf Description: TVS DIODE 11V 18.2V SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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PI6C48535-01LE PI6C48535-01LE Diodes Incorporated PI6C48535-01.pdf Description: IC CLK BUFFER 2:4 500MHZ 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution), Multiplexer
Input: LVCMOS, LVPECL, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 2:4
Differential - Input:Output: No/Yes
Supplier Device Package: 20-TSSOP
Frequency - Max: 500 MHz
Produkt ist nicht verfügbar
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PNP000013 Diodes Incorporated PN_3-3V_Dec04,2008_DS.pdf Description: DIODE
Packaging: Bulk
Type: XO (Standard)
Base Resonator: Crystal
Produkt ist nicht verfügbar
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PNU000001 Diodes Incorporated PN_3-3V_Dec04,2008_DS.pdf Description: XTAL OSC XO 300.0375MHZ PECL
Packaging: Bulk
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: PECL
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 300.0375 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FL4820001 FL4820001 Diodes Incorporated FL.pdf Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
Produkt ist nicht verfügbar
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AP393AM8G-13 AP393A.pdf
AP393AM8G-13
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: CMOS, DTL, ECL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 8mV @ 5V
Current - Input Bias (Max): 0.4µA @ 5V
Current - Output (Typ): 16mA @ 5V
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AP393AM8G-13 AP393A.pdf
AP393AM8G-13
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: CMOS, DTL, ECL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 8mV @ 5V
Current - Input Bias (Max): 0.4µA @ 5V
Current - Output (Typ): 16mA @ 5V
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BS107PSTZ BS107P.pdf
BS107PSTZ
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 200V 120MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 5V
Power Dissipation (Max): 500mW (Ta)
Supplier Device Package: E-Line (TO-92 compatible)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Qualification: AEC-Q101
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DMTH69M8LFVWQ-7 DMTH69M8LFVWQ.pdf
DMTH69M8LFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
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DMTH69M8LFVWQ-7 DMTH69M8LFVWQ.pdf
DMTH69M8LFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
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LSF0204ZB14-13 LSF0204.pdf
LSF0204ZB14-13
Hersteller: Diodes Incorporated
Description: LOGIC ULS V-QFN3535-14 T&R 5K
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 14-QFN (3.5x3.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 5.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
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LSF0204T14-13 LSF0204.pdf
LSF0204T14-13
Hersteller: Diodes Incorporated
Description: LOGIC ULS TSSOP-14 T&R 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 14-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 4.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
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LSF0204QT14-13 LSF0204Q.pdf
LSF0204QT14-13
Hersteller: Diodes Incorporated
Description: LOGIC ULS TSSOP-14 T&R 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 14-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 4.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q100
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D12V0S1U2LP1610Q-7 D12V0S1U2LP1610Q.pdf
D12V0S1U2LP1610Q-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 12VWM 20V UDFN16102
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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D12V0S1U2LP1610Q-7 D12V0S1U2LP1610Q.pdf
D12V0S1U2LP1610Q-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 12VWM 20V UDFN16102
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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LM4040B33FTA LM4040.pdf
LM4040B33FTA
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 0.2% SOT23
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.3V
Noise - 10Hz to 10kHz: 35µVrms
Current - Cathode: 70 µA
Current - Output: 15 mA
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LM4040B33FTA LM4040.pdf
LM4040B33FTA
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 0.2% SOT23
Tolerance: ±0.2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.3V
Noise - 10Hz to 10kHz: 35µVrms
Current - Cathode: 70 µA
Current - Output: 15 mA
auf Bestellung 18238 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.36 EUR
12+1.49 EUR
25+1.26 EUR
100+0.99 EUR
250+0.87 EUR
500+0.79 EUR
1000+0.72 EUR
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FL1690007 FL.pdf
FL1690007
Hersteller: Diodes Incorporated
Description: CRYSTAL 16.9344MHZ 16PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 16pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±50ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 16.9344 MHz
Produkt ist nicht verfügbar
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SMF4L18CAQ-7 SMF4L5.0CAQ-SMF4L200CAQ.pdf
SMF4L18CAQ-7
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-219AA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH8008LPSQ-13 DMTH8008LPSQ.pdf
DMTH8008LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Qualification: AEC-Q101
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DMTH8008LPSQ-13 DMTH8008LPSQ.pdf
DMTH8008LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
15+1.24 EUR
100+0.82 EUR
500+0.64 EUR
1000+0.58 EUR
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DMTH32M5LPSQ-13 DMTH32M5LPSQ.pdf
DMTH32M5LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 170A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 105000 Stücke:
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2500+0.76 EUR
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DMTH32M5LPSQ-13 DMTH32M5LPSQ.pdf
DMTH32M5LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 170A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 107371 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.99 EUR
11+1.61 EUR
100+1.12 EUR
500+0.95 EUR
1000+0.87 EUR
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DJT4030P-13 ds31590.pdf
DJT4030P-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.2 W
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.31 EUR
5000+0.28 EUR
7500+0.27 EUR
12500+0.25 EUR
17500+0.24 EUR
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DJT4030P-13 ds31590.pdf
DJT4030P-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 3A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.2 W
auf Bestellung 61706 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
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DMN31D4UFZ-7B DMN31D4UFZ.pdf
DMN31D4UFZ-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
auf Bestellung 1590000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.05 EUR
20000+0.045 EUR
30000+0.043 EUR
50000+0.04 EUR
70000+0.038 EUR
100000+0.037 EUR
250000+0.033 EUR
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DMN31D4UFZ-7B DMN31D4UFZ.pdf
DMN31D4UFZ-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
auf Bestellung 1599389 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
93+0.19 EUR
150+0.12 EUR
500+0.086 EUR
1000+0.076 EUR
2000+0.067 EUR
5000+0.058 EUR
Mindestbestellmenge: 56
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DMN31D6UT-7 DMN31D6UT.pdf
DMN31D6UT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
auf Bestellung 960000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.087 EUR
6000+0.081 EUR
9000+0.067 EUR
30000+0.066 EUR
75000+0.059 EUR
150000+0.051 EUR
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DMN31D6UT-7 DMN31D6UT.pdf
DMN31D6UT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
auf Bestellung 962995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
50+0.36 EUR
102+0.17 EUR
500+0.14 EUR
1000+0.1 EUR
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DMN31D5L-13 DMN31D5L.pdf
DMN31D5L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 420000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.079 EUR
30000+0.078 EUR
50000+0.07 EUR
100000+0.062 EUR
250000+0.06 EUR
Mindestbestellmenge: 10000
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DMN31D5L-13 DMN31D5L.pdf
DMN31D5L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 420000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
43+0.42 EUR
100+0.2 EUR
500+0.17 EUR
1000+0.12 EUR
2000+0.1 EUR
5000+0.095 EUR
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DMN31D5L-7 DMN31D5L.pdf
DMN31D5L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 5316000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.1 EUR
6000+0.095 EUR
9000+0.079 EUR
30000+0.078 EUR
75000+0.07 EUR
150000+0.06 EUR
Mindestbestellmenge: 3000
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DMN31D5L-7 DMN31D5L.pdf
DMN31D5L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 5320042 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
43+0.42 EUR
100+0.2 EUR
500+0.17 EUR
1000+0.12 EUR
Mindestbestellmenge: 29
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DMN31D5UDAQ-7B DMN31D5UDAQ.pdf
DMN31D5UDAQ-7B
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.4A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN31D5UDW-7 DMN31D5UDW.pdf
DMN31D5UDW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT363 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-363
Produkt ist nicht verfügbar
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DMN31D5UFZQ-7B DMN31D5UFZQ.pdf
DMN31D5UFZQ-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 22.6 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH4014LPDWQ-13 DMTH4014LPDWQ.pdf
DMTH4014LPDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 10.6A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DXTN22040CFGQ-7 DXTN22040CFGQ.pdf
DXTN22040CFGQ-7
Hersteller: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Qualification: AEC-Q101
auf Bestellung 19980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
22+0.81 EUR
100+0.56 EUR
500+0.47 EUR
1000+0.4 EUR
Mindestbestellmenge: 19
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DXTN22040DFGQ-7 DXTN22040DFGQ.pdf
DXTN22040DFGQ-7
Hersteller: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Frequency - Transition: 198MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Qualification: AEC-Q101
auf Bestellung 19980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
22+0.81 EUR
100+0.56 EUR
500+0.47 EUR
1000+0.4 EUR
Mindestbestellmenge: 19
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DXTN22040CFG-7 DXTN22040CFG.pdf
DXTN22040CFG-7
Hersteller: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
auf Bestellung 21980 Stücke:
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Anzahl Preis
17+1.06 EUR
20+0.9 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.4 EUR
Mindestbestellmenge: 17
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DXTN22040DFG-7 DXTN22040DFG.pdf
DXTN22040DFG-7
Hersteller: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Frequency - Transition: 198MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Produkt ist nicht verfügbar
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PI6LC48P25104LE PI6LC48P25104.pdf
PI6LC48P25104LE
Hersteller: Diodes Incorporated
Description: 156.25MHZ LVPECL SYNTHESIZER
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 187.5MHz
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Main Purpose: Ethernet
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 8-TSSOP
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PI3EQX12908AZFEX PI3EQX12908A-pb.pdf
PI3EQX12908AZFEX
Hersteller: Diodes Incorporated
Description: IC REDRIVER 12GBPS 8CHAN 54TQFN
Packaging: Tape & Reel (TR)
Package / Case: 54-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 12Gbps
Supplier Device Package: 54-TQFN (10x5.5)
Signal Conditioning: Input Equalization, Output De-Emphasis
auf Bestellung 38500 Stücke:
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Anzahl Preis
3500+6.19 EUR
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PI3EQX12908AZFEX PI3EQX12908A-pb.pdf
PI3EQX12908AZFEX
Hersteller: Diodes Incorporated
Description: IC REDRIVER 12GBPS 8CHAN 54TQFN
Packaging: Cut Tape (CT)
Package / Case: 54-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 12Gbps
Supplier Device Package: 54-TQFN (10x5.5)
Signal Conditioning: Input Equalization, Output De-Emphasis
auf Bestellung 39364 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.99 EUR
10+9.44 EUR
25+8.25 EUR
100+6.91 EUR
250+6.25 EUR
500+6.19 EUR
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DMT34M8LFDE-7 DMT34M8LFDE.pdf
DMT34M8LFDE-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 15 V
Produkt ist nicht verfügbar
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DMP4013SPSQ-13 DMP4013SPSQ.pdf
DMP4013SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 11A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.79 EUR
Mindestbestellmenge: 2500
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DMP4013SPSQ-13 DMP4013SPSQ.pdf
DMP4013SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 11A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 27648 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
11+1.62 EUR
100+1.14 EUR
500+0.92 EUR
1000+0.85 EUR
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DMN2992UFB4Q-7B DMN2992UFB4Q.pdf
DMN2992UFB4Q-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 240000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.053 EUR
20000+0.048 EUR
30000+0.045 EUR
50000+0.042 EUR
70000+0.041 EUR
100000+0.039 EUR
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DMN2992UFB4Q-7B DMN2992UFB4Q.pdf
DMN2992UFB4Q-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 244912 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
88+0.2 EUR
143+0.12 EUR
500+0.091 EUR
1000+0.08 EUR
2000+0.071 EUR
5000+0.061 EUR
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ZXMS6008DN8-13 ZXMS6008DN8.pdf
ZXMS6008DN8-13
Hersteller: Diodes Incorporated
Description: LOW SIDE INTELLIFET SO-8 T&R 2.5
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
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ZXMS6008DN8Q-13 ZXMS6008DN8Q.pdf
ZXMS6008DN8Q-13
Hersteller: Diodes Incorporated
Description: LOW SIDE INTELLIFET SO-8 T&R 2.5
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SDR05F03T5-7
SDR05F03T5-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 3V 50MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.1 ns
Technology: Schottky
Capacitance @ Vr, F: 0.52pF @ 200mV, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 3 V
auf Bestellung 183000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.084 EUR
6000+0.075 EUR
9000+0.071 EUR
15000+0.065 EUR
21000+0.062 EUR
30000+0.059 EUR
75000+0.053 EUR
150000+0.049 EUR
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FL2500047 FL.pdf
FL2500047
Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
auf Bestellung 24000 Stücke:
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3000+0.52 EUR
6000+0.5 EUR
9000+0.49 EUR
15000+0.47 EUR
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FL2500047 FL.pdf
FL2500047
Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 18PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
auf Bestellung 25991 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
24+0.74 EUR
26+0.7 EUR
50+0.67 EUR
100+0.64 EUR
250+0.61 EUR
500+0.58 EUR
1000+0.56 EUR
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DDZ9684Q-7 ds30410.pdf
DDZ9684Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.3V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.041 EUR
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DDZ9684Q-7 ds30410.pdf
DDZ9684Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.3V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
Qualification: AEC-Q101
auf Bestellung 5418 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
164+0.11 EUR
292+0.06 EUR
500+0.053 EUR
Mindestbestellmenge: 112
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DDZ9689Q-7 ds30410.pdf
DDZ9689Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DDZ9689Q-7 ds30410.pdf
DDZ9689Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
132+0.13 EUR
278+0.063 EUR
Mindestbestellmenge: 91
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NX21100001 NX21100001.pdf
NX21100001
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 10.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 10 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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SMBJ11A-13-F ds19002.pdf
SMBJ11A-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 11V 18.2V SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 450000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.13 EUR
9000+0.12 EUR
30000+0.11 EUR
75000+0.1 EUR
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SMBJ11A-13-F ds19002.pdf
SMBJ11A-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 11V 18.2V SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 452970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
43+0.42 EUR
100+0.2 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
PI6C48535-01LE PI6C48535-01.pdf
PI6C48535-01LE
Hersteller: Diodes Incorporated
Description: IC CLK BUFFER 2:4 500MHZ 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution), Multiplexer
Input: LVCMOS, LVPECL, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 2:4
Differential - Input:Output: No/Yes
Supplier Device Package: 20-TSSOP
Frequency - Max: 500 MHz
Produkt ist nicht verfügbar
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PNP000013 PN_3-3V_Dec04,2008_DS.pdf
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Type: XO (Standard)
Base Resonator: Crystal
Produkt ist nicht verfügbar
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PNU000001 PN_3-3V_Dec04,2008_DS.pdf
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 300.0375MHZ PECL
Packaging: Bulk
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: PECL
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 300.0375 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FL4820001 FL.pdf
FL4820001
Hersteller: Diodes Incorporated
Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
Produkt ist nicht verfügbar
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