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DMPH6050SFGQ-13 DMPH6050SFGQ-13 Diodes Incorporated DMPH6050SFGQ.pdf Description: MOSFET P-CH 60V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
Qualification: AEC-Q101
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DMPH6050SSDQ-13 DMPH6050SSDQ-13 Diodes Incorporated DMPH6050SSDQ.pdf Description: MOSFET 2P-CH 60V 5.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
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DMPH6050SSDQ-13 DMPH6050SSDQ-13 Diodes Incorporated DMPH6050SSDQ.pdf Description: MOSFET 2P-CH 60V 5.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
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DMPH6050SPDWQ-13 DMPH6050SPDWQ-13 Diodes Incorporated DMPH6050SPDWQ.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 26A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN67D7L-13 DMN67D7L-13 Diodes Incorporated DMN67D7L.pdf Description: MOSFET N-CH 60V 210MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 570mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
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DMN67D7L-13 DMN67D7L-13 Diodes Incorporated DMN67D7L.pdf Description: MOSFET N-CH 60V 210MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 570mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
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SDT12A120P5-13D SDT12A120P5-13D Diodes Incorporated SDT12A120P5.pdf Description: DIODE SCHOTTK 120V 12A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
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SDT12A120P5-7 SDT12A120P5-7 Diodes Incorporated SDT12A120P5.pdf Description: DIODE SCHOTTK 120V 12A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Produkt ist nicht verfügbar
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SDT12A120P5-7D SDT12A120P5-7D Diodes Incorporated SDT12A120P5.pdf Description: DIODE SCHOTTK 120V 12A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Produkt ist nicht verfügbar
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TLC27L1ACS-13 TLC27L1ACS-13 Diodes Incorporated TLC27L1.pdf Description: IC CMOS 1 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: 0°C ~ 70°C
Current - Supply: 14µA
Slew Rate: 0.04V/µs
Gain Bandwidth Product: 110 kHz
Current - Input Bias: 0.7 pA
Voltage - Input Offset: 5 mV
Supplier Device Package: 8-SO
Number of Circuits: 1
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V
Produkt ist nicht verfügbar
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GC1630007 GC1630007 Diodes Incorporated GC1630007.pdf Description: CRYSTAL 16.3840MHZ 18PF
Packaging: Tape & Reel (TR)
Load Capacitance: 18pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 16.384 MHz
Produkt ist nicht verfügbar
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GC1630008 GC1630008 Diodes Incorporated GC%2CGF_Series.pdf Description: CRYSTAL 16.3840MHZ 12PF
Packaging: Tape & Reel (TR)
Load Capacitance: 12pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 16.384 MHz
Produkt ist nicht verfügbar
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DMC3071LVT-13 DMC3071LVT-13 Diodes Incorporated DMC3071LVT.pdf Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
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DMC3071LVT-13 DMC3071LVT-13 Diodes Incorporated DMC3071LVT.pdf Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
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DMC3732UVT-13 DMC3732UVT-13 Diodes Incorporated DMC3732UVT.pdf Description: MOSFET N/P-CH 30V 1.1A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 540mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V, 54pF @ 15V
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 1.6nC @ 8V
Vgs(th) (Max) @ Id: 950mV @ 250µA, 1.1V @ 250µA
Supplier Device Package: TSOT-26
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DMP31D1UVT-13 DMP31D1UVT-13 Diodes Incorporated DMP31D1UVT.pdf Description: MOSFET 2P-CH 30V 0.76A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V
Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TSOT-26
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DMN3732UVT-13 DMN3732UVT-13 Diodes Incorporated DMN3732UVT.pdf Description: MOSFET 2N-CH 30V 1.1A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TSOT-26
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DMN62D2UVT-13 DMN62D2UVT-13 Diodes Incorporated DMN62D2UVT.pdf Description: MOSFET 2N-CH 60V 0.455A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 455mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
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DMN2046UVT-13 DMN2046UVT-13 Diodes Incorporated DMN2046UVT.pdf Description: MOSFET 2N-CH 20V 2.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 590mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: TSOT-26
Produkt ist nicht verfügbar
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DMC3730UVT-13 DMC3730UVT-13 Diodes Incorporated DMC3730UVT.pdf Description: MOSFET N/P-CH 25V 0.68A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
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DMP2040UVT-13 DMP2040UVT-13 Diodes Incorporated DMP2040UVT.pdf Description: MOSFET P-CH 20V TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
Produkt ist nicht verfügbar
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DMN3066LVT-13 DMN3066LVT-13 Diodes Incorporated DMN3066LVT.pdf Description: MOSFET BVDSS: 25V~30V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 10 V
Produkt ist nicht verfügbar
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DMP2067LVT-13 DMP2067LVT-13 Diodes Incorporated DMP2067LVT.pdf Description: MOSFET P-CH 20V 4.2A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
Produkt ist nicht verfügbar
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DMP3045LVT-13 DMP3045LVT-13 Diodes Incorporated DMP3045LVT.pdf Description: MOSFET BVDSS: 25V~30V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.9A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 749 pF @ 15 V
Produkt ist nicht verfügbar
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DMN2041UVT-13 DMN2041UVT-13 Diodes Incorporated DMN2041UVT.pdf Description: MOSFET 2N-CH 20V 5.8A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TSOT-26
Produkt ist nicht verfügbar
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DMN3270UVT-13 DMN3270UVT-13 Diodes Incorporated DMN3270UVT.pdf Description: MOSFET 2N-CH 30V 1.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 760mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 161pF @ 15V
Rds On (Max) @ Id, Vgs: 270mOhm @ 650mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.07nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 40µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN6041SVT-13 DMN6041SVT-13 Diodes Incorporated DMN6041SVT.pdf Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
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DMC1028UVT-13 DMC1028UVT-13 Diodes Incorporated DMC1028UVT.pdf Description: MOSFET N/P-CH 12V 6.1A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Produkt ist nicht verfügbar
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DMP6111SVT-13 DMP6111SVT-13 Diodes Incorporated DMP6111SVT.pdf Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 30 V
Produkt ist nicht verfügbar
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PI3DPX1202A1ZBE PI3DPX1202A1ZBE Diodes Incorporated PI3DPX1202A.pdf Description: ACTIVE DISPLAY V-QFN7070-48 TRAY
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Number of Channels: 1
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Applications: DisplayPort
Data Rate (Max): 5.4Gbps
Supplier Device Package: 48-TQFN (7x7)
Signal Conditioning: Input Equalization, Output Pre-Emphasis
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PI3DPX1202A1ZBEX PI3DPX1202A1ZBEX Diodes Incorporated PI3DPX1202A.pdf Description: ACTIVE DISPLAY V-QFN7070-48 T&R
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Number of Channels: 1
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Applications: DisplayPort
Data Rate (Max): 5.4Gbps
Supplier Device Package: 48-TQFN (7x7)
Signal Conditioning: Input Equalization, Output Pre-Emphasis
Produkt ist nicht verfügbar
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DSC10120 DSC10120 Diodes Incorporated DSC10120.pdf Description: DIODE SIL CARB 1.2KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 640 µA @ 1200 V
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DSC10120D1-13 DSC10120D1-13 Diodes Incorporated DSC10120D1.pdf Description: DIODE SIL CARB 1.2KV 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 608pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 640 µA @ 1200 V
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SQF620002Z Diodes Incorporated SQF620002Z.pdf Description: XTAL OSC XO 156.2500MHZ HCSL
Packaging: Tape & Reel (TR)
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Output: HCSL
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 156.25 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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DMP32D9UFO-7B DMP32D9UFO-7B Diodes Incorporated DMP32D9UFO.pdf Description: MOSFET BVDSS: 25V~30V X2-DFN0604
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0604-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 15 V
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DMP2069UFY4Q-7 DMP2069UFY4Q-7 Diodes Incorporated DMP2069UFY4Q.pdf Description: MOSFET BVDSS: 8V~24V X2-DFN2015-
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 530mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN2015-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V
Qualification: AEC-Q101
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GC1200004 GC1200004 Diodes Incorporated GC%2CGF_Series.pdf Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
Produkt ist nicht verfügbar
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GC1200004 GC1200004 Diodes Incorporated GC%2CGF_Series.pdf Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Cut Tape (CT)
Type: MHz Crystal
Operating Mode: Fundamental
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AH3390Q-P-A AH3390Q-P-A Diodes Incorporated Description: MAGNETIC SWITCH HALL UNIP SIP3
Packaging: Bulk
Package / Case: 3-SIP, Formed Leads
Mounting Type: Through Hole
Supplier Device Package: 3-SIP
Produkt ist nicht verfügbar
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AH3390Q-W-7 AH3390Q-W-7 Diodes Incorporated Description: MAGNETIC SWITCH HALL UNIPOL SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SC-59-3
Produkt ist nicht verfügbar
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MMSTA13-7-F MMSTA13-7-F Diodes Incorporated ds30165.pdf Description: TRANS NPN DARL 30V 0.3A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
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MMSTA13-7-F MMSTA13-7-F Diodes Incorporated ds30165.pdf Description: TRANS NPN DARL 30V 0.3A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
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SMAJ90A-13-F SMAJ90A-13-F Diodes Incorporated SMAJ5.0CA-SMAJ200CA.pdf Description: TVS DIODE 90V 146V SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
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SMAJ90A-13-F SMAJ90A-13-F Diodes Incorporated SMAJ5.0CA-SMAJ200CA.pdf Description: TVS DIODE 90V 146V SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
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TT4M-T TT4M-T Diodes Incorporated TT4M.pdf Description: BRIDGE RECT 1PHASE 1KV 4A TTL
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TTL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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UX3213E0050.000000 UX3213E0050.000000 Diodes Incorporated UX31-UX321.pdf Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 25mA
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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SMBJ120CA-13-F SMBJ120CA-13-F Diodes Incorporated ds19002.pdf Description: TVS DIODE 120VWM 193VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ120CA-13-F SMBJ120CA-13-F Diodes Incorporated ds19002.pdf Description: TVS DIODE 120VWM 193VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 600W
Power Line Protection: No
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S12M15600B S12M15600B Diodes Incorporated S12M15600B_LS.pdf Description: THYRISTOR TO220AB TUBE 50PCS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 125A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
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S8M02600B S8M02600B Diodes Incorporated S8M02-B.PDF Description: THYRISTOR TO220AB TUBE 50PCS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 110°C (TJ)
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 600 V
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T4M35T600B T4M35T600B Diodes Incorporated T4M35T600B_LS.pdf Description: THYRISTOR TO220AB TUBE 50PCS
Packaging: Tube
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T12M25F600B Diodes Incorporated T12M25F600B_Rev3_Oct2010.pdf Description: THYRISTOR TO220AB TUBE 50PCS
Packaging: Tube
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T16M35T600B T16M35T600B Diodes Incorporated T16M35T600B_LS.pdf Description: THYRISTOR TO220AB TUBE 50PCS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 150A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
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FH1600054 FH1600054 Diodes Incorporated FH.pdf Description: CRYSTAL 16.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 16 MHz
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FH2700030 FH2700030 Diodes Incorporated FH.pdf Description: CRYSTAL 27.0000MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 27 MHz
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FH3200007 FH3200007 Diodes Incorporated FH.pdf Description: CRYSTAL 32.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 32 MHz
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FH4000079 FH4000079 Diodes Incorporated FH.pdf Description: CRYSTAL 40.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 40 MHz
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D18V0X1B2LPQ-7B D18V0X1B2LPQ-7B Diodes Incorporated D18V0X1B2LPQ.pdf Description: Dataline Protection PP X1-DFN100
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.7V
Voltage - Clamping (Max) @ Ipp: 36V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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D18V0X1B2LP-7B D18V0X1B2LP-7B Diodes Incorporated D18V0X1B2LP.pdf Description: DATALINE PROTECTION PP X1-DFN100
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.7V
Voltage - Clamping (Max) @ Ipp: 36V
Power Line Protection: No
Produkt ist nicht verfügbar
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D18V0X1B2LP4Q-7B D18V0X1B2LP4Q-7B Diodes Incorporated DS43178.pdf Description: DATALINE PROTECTION PP X2-DFN100
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Current - Peak Pulse (10/1000µs): 3A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: X2-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.7V
Voltage - Clamping (Max) @ Ipp: 36V
Power - Peak Pulse: 120W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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DMPH6050SFGQ-13 DMPH6050SFGQ.pdf
DMPH6050SFGQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
Qualification: AEC-Q101
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DMPH6050SSDQ-13 DMPH6050SSDQ.pdf
DMPH6050SSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 5.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
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DMPH6050SSDQ-13 DMPH6050SSDQ.pdf
DMPH6050SSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 5.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
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8+2.22 EUR
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DMPH6050SPDWQ-13 DMPH6050SPDWQ.pdf
DMPH6050SPDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 26A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Qualification: AEC-Q101
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DMN67D7L-13 DMN67D7L.pdf
DMN67D7L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 210MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 570mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
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DMN67D7L-13 DMN67D7L.pdf
DMN67D7L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 210MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 570mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
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SDT12A120P5-13D SDT12A120P5.pdf
SDT12A120P5-13D
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTK 120V 12A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
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SDT12A120P5-7 SDT12A120P5.pdf
SDT12A120P5-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTK 120V 12A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
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SDT12A120P5-7D SDT12A120P5.pdf
SDT12A120P5-7D
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTK 120V 12A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
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TLC27L1ACS-13 TLC27L1.pdf
TLC27L1ACS-13
Hersteller: Diodes Incorporated
Description: IC CMOS 1 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: 0°C ~ 70°C
Current - Supply: 14µA
Slew Rate: 0.04V/µs
Gain Bandwidth Product: 110 kHz
Current - Input Bias: 0.7 pA
Voltage - Input Offset: 5 mV
Supplier Device Package: 8-SO
Number of Circuits: 1
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V
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GC1630007 GC1630007.pdf
GC1630007
Hersteller: Diodes Incorporated
Description: CRYSTAL 16.3840MHZ 18PF
Packaging: Tape & Reel (TR)
Load Capacitance: 18pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 16.384 MHz
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GC1630008 GC%2CGF_Series.pdf
GC1630008
Hersteller: Diodes Incorporated
Description: CRYSTAL 16.3840MHZ 12PF
Packaging: Tape & Reel (TR)
Load Capacitance: 12pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 16.384 MHz
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DMC3071LVT-13 DMC3071LVT.pdf
DMC3071LVT-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
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DMC3071LVT-13 DMC3071LVT.pdf
DMC3071LVT-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
auf Bestellung 17750 Stücke:
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Anzahl Preis
22+0.81 EUR
36+0.49 EUR
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DMC3732UVT-13 DMC3732UVT.pdf
DMC3732UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 1.1A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 540mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V, 54pF @ 15V
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 1.6nC @ 8V
Vgs(th) (Max) @ Id: 950mV @ 250µA, 1.1V @ 250µA
Supplier Device Package: TSOT-26
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DMP31D1UVT-13 DMP31D1UVT.pdf
DMP31D1UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 0.76A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V
Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TSOT-26
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DMN3732UVT-13 DMN3732UVT.pdf
DMN3732UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 1.1A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TSOT-26
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DMN62D2UVT-13 DMN62D2UVT.pdf
DMN62D2UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.455A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 455mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
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DMN2046UVT-13 DMN2046UVT.pdf
DMN2046UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 2.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 590mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: TSOT-26
Produkt ist nicht verfügbar
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DMC3730UVT-13 DMC3730UVT.pdf
DMC3730UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 25V 0.68A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 190000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.14 EUR
20000+0.13 EUR
30000+0.12 EUR
50000+0.11 EUR
Mindestbestellmenge: 10000
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DMP2040UVT-13 DMP2040UVT.pdf
DMP2040UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
Produkt ist nicht verfügbar
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DMN3066LVT-13 DMN3066LVT.pdf
DMN3066LVT-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 10 V
Produkt ist nicht verfügbar
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DMP2067LVT-13 DMP2067LVT.pdf
DMP2067LVT-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 4.2A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
Produkt ist nicht verfügbar
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DMP3045LVT-13 DMP3045LVT.pdf
DMP3045LVT-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.9A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 749 pF @ 15 V
Produkt ist nicht verfügbar
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DMN2041UVT-13 DMN2041UVT.pdf
DMN2041UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.8A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TSOT-26
Produkt ist nicht verfügbar
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DMN3270UVT-13 DMN3270UVT.pdf
DMN3270UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 1.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 760mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 161pF @ 15V
Rds On (Max) @ Id, Vgs: 270mOhm @ 650mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.07nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 40µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN6041SVT-13 DMN6041SVT.pdf
DMN6041SVT-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.19 EUR
Mindestbestellmenge: 10000
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DMC1028UVT-13 DMC1028UVT.pdf
DMC1028UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 6.1A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Produkt ist nicht verfügbar
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DMP6111SVT-13 DMP6111SVT.pdf
DMP6111SVT-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 30 V
Produkt ist nicht verfügbar
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PI3DPX1202A1ZBE PI3DPX1202A.pdf
PI3DPX1202A1ZBE
Hersteller: Diodes Incorporated
Description: ACTIVE DISPLAY V-QFN7070-48 TRAY
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Number of Channels: 1
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Applications: DisplayPort
Data Rate (Max): 5.4Gbps
Supplier Device Package: 48-TQFN (7x7)
Signal Conditioning: Input Equalization, Output Pre-Emphasis
Produkt ist nicht verfügbar
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PI3DPX1202A1ZBEX PI3DPX1202A.pdf
PI3DPX1202A1ZBEX
Hersteller: Diodes Incorporated
Description: ACTIVE DISPLAY V-QFN7070-48 T&R
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Number of Channels: 1
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Applications: DisplayPort
Data Rate (Max): 5.4Gbps
Supplier Device Package: 48-TQFN (7x7)
Signal Conditioning: Input Equalization, Output Pre-Emphasis
Produkt ist nicht verfügbar
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DSC10120 DSC10120.pdf
DSC10120
Hersteller: Diodes Incorporated
Description: DIODE SIL CARB 1.2KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 640 µA @ 1200 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.64 EUR
50+14.07 EUR
100+12.59 EUR
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DSC10120D1-13 DSC10120D1.pdf
DSC10120D1-13
Hersteller: Diodes Incorporated
Description: DIODE SIL CARB 1.2KV 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 608pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 640 µA @ 1200 V
Produkt ist nicht verfügbar
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SQF620002Z SQF620002Z.pdf
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 156.2500MHZ HCSL
Packaging: Tape & Reel (TR)
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Output: HCSL
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 156.25 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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DMP32D9UFO-7B DMP32D9UFO.pdf
DMP32D9UFO-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0604
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0604-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 15 V
auf Bestellung 369950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
76+0.23 EUR
121+0.15 EUR
500+0.11 EUR
1000+0.094 EUR
2000+0.083 EUR
5000+0.072 EUR
Mindestbestellmenge: 46
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DMP2069UFY4Q-7 DMP2069UFY4Q.pdf
DMP2069UFY4Q-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN2015-
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 530mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN2015-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 35975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
25+0.72 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.31 EUR
Mindestbestellmenge: 16
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GC1200004 GC%2CGF_Series.pdf
GC1200004
Hersteller: Diodes Incorporated
Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
Produkt ist nicht verfügbar
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GC1200004 GC%2CGF_Series.pdf
GC1200004
Hersteller: Diodes Incorporated
Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Cut Tape (CT)
Type: MHz Crystal
Operating Mode: Fundamental
auf Bestellung 824 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
28+0.65 EUR
50+0.58 EUR
100+0.56 EUR
500+0.5 EUR
Mindestbestellmenge: 24
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AH3390Q-P-A
AH3390Q-P-A
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH HALL UNIP SIP3
Packaging: Bulk
Package / Case: 3-SIP, Formed Leads
Mounting Type: Through Hole
Supplier Device Package: 3-SIP
Produkt ist nicht verfügbar
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AH3390Q-W-7
AH3390Q-W-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH HALL UNIPOL SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SC-59-3
Produkt ist nicht verfügbar
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MMSTA13-7-F ds30165.pdf
MMSTA13-7-F
Hersteller: Diodes Incorporated
Description: TRANS NPN DARL 30V 0.3A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000
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MMSTA13-7-F ds30165.pdf
MMSTA13-7-F
Hersteller: Diodes Incorporated
Description: TRANS NPN DARL 30V 0.3A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
auf Bestellung 29500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
34+0.52 EUR
100+0.26 EUR
500+0.21 EUR
1000+0.16 EUR
Mindestbestellmenge: 24
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SMAJ90A-13-F SMAJ5.0CA-SMAJ200CA.pdf
SMAJ90A-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 90V 146V SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
auf Bestellung 390000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.14 EUR
10000+0.12 EUR
50000+0.1 EUR
125000+0.098 EUR
Mindestbestellmenge: 5000
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SMAJ90A-13-F SMAJ5.0CA-SMAJ200CA.pdf
SMAJ90A-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 90V 146V SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
auf Bestellung 394890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
39+0.45 EUR
100+0.23 EUR
500+0.2 EUR
1000+0.16 EUR
2000+0.14 EUR
Mindestbestellmenge: 28
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TT4M-T TT4M.pdf
TT4M-T
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 4A TTL
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TTL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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UX3213E0050.000000 UX31-UX321.pdf
UX3213E0050.000000
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 25mA
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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SMBJ120CA-13-F ds19002.pdf
SMBJ120CA-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 120VWM 193VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 258000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
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SMBJ120CA-13-F ds19002.pdf
SMBJ120CA-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 120VWM 193VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 259424 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
48+0.37 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 33
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S12M15600B S12M15600B_LS.pdf
S12M15600B
Hersteller: Diodes Incorporated
Description: THYRISTOR TO220AB TUBE 50PCS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 125A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
auf Bestellung 6526 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
50+0.58 EUR
100+0.42 EUR
500+0.35 EUR
1000+0.33 EUR
Mindestbestellmenge: 25
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S8M02600B S8M02-B.PDF
S8M02600B
Hersteller: Diodes Incorporated
Description: THYRISTOR TO220AB TUBE 50PCS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 110°C (TJ)
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 600 V
auf Bestellung 58486 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
50+0.79 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
2000+0.44 EUR
5000+0.4 EUR
10000+0.37 EUR
Mindestbestellmenge: 11
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T4M35T600B T4M35T600B_LS.pdf
T4M35T600B
Hersteller: Diodes Incorporated
Description: THYRISTOR TO220AB TUBE 50PCS
Packaging: Tube
auf Bestellung 12050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
50+0.73 EUR
100+0.64 EUR
500+0.49 EUR
1000+0.45 EUR
2000+0.41 EUR
5000+0.36 EUR
10000+0.34 EUR
Mindestbestellmenge: 12
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T12M25F600B T12M25F600B_Rev3_Oct2010.pdf
Hersteller: Diodes Incorporated
Description: THYRISTOR TO220AB TUBE 50PCS
Packaging: Tube
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.81 EUR
50+0.84 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.53 EUR
2000+0.48 EUR
Mindestbestellmenge: 10
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T16M35T600B T16M35T600B_LS.pdf
T16M35T600B
Hersteller: Diodes Incorporated
Description: THYRISTOR TO220AB TUBE 50PCS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 150A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
auf Bestellung 21024 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
50+1.13 EUR
100+1 EUR
500+0.79 EUR
1000+0.72 EUR
2000+0.66 EUR
5000+0.59 EUR
10000+0.55 EUR
Mindestbestellmenge: 8
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FH1600054 FH.pdf
FH1600054
Hersteller: Diodes Incorporated
Description: CRYSTAL 16.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 16 MHz
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.54 EUR
Mindestbestellmenge: 3000
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FH2700030 FH.pdf
FH2700030
Hersteller: Diodes Incorporated
Description: CRYSTAL 27.0000MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 27 MHz
Produkt ist nicht verfügbar
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FH3200007 FH.pdf
FH3200007
Hersteller: Diodes Incorporated
Description: CRYSTAL 32.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 32 MHz
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.54 EUR
Mindestbestellmenge: 3000
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FH4000079 FH.pdf
FH4000079
Hersteller: Diodes Incorporated
Description: CRYSTAL 40.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 40 MHz
Produkt ist nicht verfügbar
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D18V0X1B2LPQ-7B D18V0X1B2LPQ.pdf
D18V0X1B2LPQ-7B
Hersteller: Diodes Incorporated
Description: Dataline Protection PP X1-DFN100
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.7V
Voltage - Clamping (Max) @ Ipp: 36V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 139000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
33+0.54 EUR
100+0.27 EUR
500+0.24 EUR
1000+0.19 EUR
2000+0.17 EUR
5000+0.16 EUR
Mindestbestellmenge: 24
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D18V0X1B2LP-7B D18V0X1B2LP.pdf
D18V0X1B2LP-7B
Hersteller: Diodes Incorporated
Description: DATALINE PROTECTION PP X1-DFN100
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.7V
Voltage - Clamping (Max) @ Ipp: 36V
Power Line Protection: No
Produkt ist nicht verfügbar
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D18V0X1B2LP4Q-7B DS43178.pdf
D18V0X1B2LP4Q-7B
Hersteller: Diodes Incorporated
Description: DATALINE PROTECTION PP X2-DFN100
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Current - Peak Pulse (10/1000µs): 3A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: X2-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.7V
Voltage - Clamping (Max) @ Ipp: 36V
Power - Peak Pulse: 120W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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