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ZXTP2012ASTZ ZXTP2012ASTZ Diodes Incorporated ZXTP2012A.pdf Description: TRANS PNP 60V 3.5A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 400mA, 4A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
auf Bestellung 3928 Stücke:
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12+1.58 EUR
100+1.23 EUR
500+1.04 EUR
1000+0.85 EUR
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ZXTP2012ASTZ ZXTP2012ASTZ Diodes Incorporated ZXTP2012A.pdf Description: TRANS PNP 60V 3.5A E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 400mA, 4A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
auf Bestellung 6000 Stücke:
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4000+0.76 EUR
6000+0.73 EUR
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ZXTP2012A ZXTP2012A Diodes Incorporated ZXTP2012A.pdf Description: TRANS PNP 60V 3.5A TO92-3
Packaging: Bulk
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 400mA, 4A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
auf Bestellung 20000 Stücke:
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ZXTP2012ZQTA ZXTP2012ZQTA Diodes Incorporated ZXTP2012Z.pdf Description: TRANS PNP 60V 4.3A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 215mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 4.3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Qualification: AEC-Q101
auf Bestellung 349000 Stücke:
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2000+0.6 EUR
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ZXTP2012ZQTA ZXTP2012ZQTA Diodes Incorporated ZXTP2012Z.pdf Description: TRANS PNP 60V 4.3A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 215mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 4.3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Qualification: AEC-Q101
auf Bestellung 349000 Stücke:
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PI5C3384QEX PI5C3384QEX Diodes Incorporated PI5C3384%28C%29.pdf Description: IC BUS SWITCH 5 X 1:1 24QSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 5 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 24-QSOP
Produkt ist nicht verfügbar
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PI5C3384QEX PI5C3384QEX Diodes Incorporated PI5C3384%28C%29.pdf Description: IC BUS SWITCH 5 X 1:1 24QSOP
Packaging: Cut Tape (CT)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 5 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 24-QSOP
Produkt ist nicht verfügbar
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AP7365-30SNG-7 AP7365-30SNG-7 Diodes Incorporated AP7365.pdf Description: IC REG LIN 3V 600MA U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.4V @ 600mA
Protection Features: Over Current, Over Temperature
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AP7365-30SNG-7 AP7365-30SNG-7 Diodes Incorporated AP7365.pdf Description: IC REG LIN 3V 600MA U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.4V @ 600mA
Protection Features: Over Current, Over Temperature
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250+0.44 EUR
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1000+0.35 EUR
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AP7365-10EG-13 AP7365-10EG-13 Diodes Incorporated AP7365.pdf Description: IC REG LINEAR 1V 600MA SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1V
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.6V @ 600mA
Protection Features: Over Current, Over Temperature
auf Bestellung 20000 Stücke:
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2500+0.31 EUR
5000+0.28 EUR
7500+0.26 EUR
12500+0.25 EUR
17500+0.24 EUR
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AP7365-10EG-13 AP7365-10EG-13 Diodes Incorporated AP7365.pdf Description: IC REG LINEAR 1V 600MA SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1V
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.6V @ 600mA
Protection Features: Over Current, Over Temperature
auf Bestellung 22495 Stücke:
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22+0.83 EUR
26+0.68 EUR
100+0.52 EUR
250+0.44 EUR
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1000+0.35 EUR
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ZHB6792TA ZHB6792TA Diodes Incorporated ZHB6792.pdf Description: TRANS 2NPN/2PNP 70V 1A SM8
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Transistor Type: 2 NPN, 2 PNP (H-Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SM8
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1000+1.78 EUR
2000+1.66 EUR
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ZHB6792TA ZHB6792TA Diodes Incorporated ZHB6792.pdf Description: TRANS 2NPN/2PNP 70V 1A SM8
Packaging: Cut Tape (CT)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Transistor Type: 2 NPN, 2 PNP (H-Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SM8
auf Bestellung 12628 Stücke:
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4+5.21 EUR
10+3.4 EUR
100+2.37 EUR
500+1.93 EUR
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DMT32M5LPS-13 DMT32M5LPS-13 Diodes Incorporated DMT32M5LPS.pdf Description: MOSFET N-CH 30V 150A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
auf Bestellung 1847500 Stücke:
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DMT32M5LPS-13 DMT32M5LPS-13 Diodes Incorporated DMT32M5LPS.pdf Description: MOSFET N-CH 30V 150A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
auf Bestellung 1849905 Stücke:
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14+1.34 EUR
16+1.17 EUR
100+0.81 EUR
500+0.68 EUR
1000+0.58 EUR
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DMT32M5LFG-13 DMT32M5LFG-13 Diodes Incorporated DMT32M5LFG.pdf Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 831000 Stücke:
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6000+0.72 EUR
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DMT32M5LFG-13 DMT32M5LFG-13 Diodes Incorporated DMT32M5LFG.pdf Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 833856 Stücke:
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12+1.49 EUR
100+1.16 EUR
500+0.98 EUR
1000+0.8 EUR
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DMT32M5LFG-7 DMT32M5LFG-7 Diodes Incorporated DMT32M5LFG.pdf Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
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DMT32M5LFG-7 DMT32M5LFG-7 Diodes Incorporated DMT32M5LFG.pdf Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 29928 Stücke:
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12+1.49 EUR
100+1.16 EUR
500+0.98 EUR
1000+0.8 EUR
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DMT32M4LFG-7 DMT32M4LFG-7 Diodes Incorporated DMT32M4LFG.pdf Description: MOSFET BVDSS: 25V~30V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V
Produkt ist nicht verfügbar
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DMT32M4LFG-13 DMT32M4LFG-13 Diodes Incorporated DMT32M4LFG.pdf Description: MOSFET BVDSS: 25V~30V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V
Produkt ist nicht verfügbar
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PI3EQX5801ZDEX PI3EQX5801ZDEX Diodes Incorporated PI3EQX5801-PB.pdf Description: IC REDRIVER USB 3.0 1CH 20TQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Delay Time: 1.0ns
Number of Channels: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.5V, 3.3V
Applications: USB 3.0
Data Rate (Max): 5Gbps
Supplier Device Package: 20-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
auf Bestellung 206500 Stücke:
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3500+4.98 EUR
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PI3EQX5801ZDEX PI3EQX5801ZDEX Diodes Incorporated PI3EQX5801-PB.pdf Description: IC REDRIVER USB 3.0 1CH 20TQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Delay Time: 1.0ns
Number of Channels: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.5V, 3.3V
Applications: USB 3.0
Data Rate (Max): 5Gbps
Supplier Device Package: 20-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
auf Bestellung 208167 Stücke:
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2+9.93 EUR
10+8.91 EUR
25+8.43 EUR
100+7.3 EUR
250+6.93 EUR
500+6.22 EUR
1000+5.24 EUR
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ZVN3310ASTZ ZVN3310ASTZ Diodes Incorporated ZVN3310A.pdf Description: MOSFET N-CH 100V 200MA E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
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GBU25JL_HF Diodes Incorporated GBU25JL_LS.pdf Description: MEDIUM/HIGH POWER BRIDGE GBU TUB
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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AH1887-ZG-7 AH1887-ZG-7 Diodes Incorporated AH1887.pdf Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.3V
Technology: Hall Effect
Sensing Range: ±5mT Trip, ±0.6mT Release
Current - Supply (Max): 12µA
Supplier Device Package: SOT-553
Test Condition: 25°C
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AH1887-ZG-7 AH1887-ZG-7 Diodes Incorporated AH1887.pdf Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.3V
Technology: Hall Effect
Sensing Range: ±5mT Trip, ±0.6mT Release
Current - Supply (Max): 12µA
Supplier Device Package: SOT-553
Test Condition: 25°C
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AP9101CAK6-BBTRG1 AP9101CAK6-BBTRG1 Diodes Incorporated Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
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AP9101CAK6-BDTRG1 AP9101CAK6-BDTRG1 Diodes Incorporated Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
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74LVC2G32RA3-7 74LVC2G32RA3-7 Diodes Incorporated 74LVC2G32.pdf Description: IC GATE OR 2CH 2-INP DFN1210-8
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1210-8
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 40 µA
Produkt ist nicht verfügbar
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74LVC2G32RA3-7 74LVC2G32RA3-7 Diodes Incorporated 74LVC2G32.pdf Description: IC GATE OR 2CH 2-INP DFN1210-8
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1210-8
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 40 µA
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AH277AZ4-BG1 AH277AZ4-BG1 Diodes Incorporated AH277A.pdf Description: MAGNETIC SWITCH LATCH TO94
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 4-SSIP
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3.5V ~ 16V
Technology: Hall Effect
Sensing Range: 7mT Trip, -7mT Release
Current - Output (Max): 400mA
Current - Supply (Max): 16mA
Supplier Device Package: TO-94
Test Condition: 25°C
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AH277AZ4-AG1 AH277AZ4-AG1 Diodes Incorporated AH277A.pdf Description: MAGNETIC SWITCH LATCH TO94
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 4-SSIP
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3.5V ~ 16V
Technology: Hall Effect
Sensing Range: 5mT Trip, -5mT Release
Current - Output (Max): 400mA
Current - Supply (Max): 16mA
Supplier Device Package: TO-94
Test Condition: 25°C
Produkt ist nicht verfügbar
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DMN32D0LV-7 DMN32D0LV-7 Diodes Incorporated DMN32D0LV.pdf Description: MOSFET 2N-CH 30V 0.68A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
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DMN32D0LV-7 DMN32D0LV-7 Diodes Incorporated DMN32D0LV.pdf Description: MOSFET 2N-CH 30V 0.68A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
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MBR2150VG-E1 MBR2150VG-E1 Diodes Incorporated MBR2150.pdf Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
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MBR2150VG-G1 MBR2150VG-G1 Diodes Incorporated MBR2150.pdf Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
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MBR2150VGTR-G1 MBR2150VGTR-G1 Diodes Incorporated MBR2150.pdf Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
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MBR2150VRTR-E1 MBR2150VRTR-E1 Diodes Incorporated MBR2150.pdf Description: DIODE SCHOTTKY 150V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
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B340LB-13-F-2477 B340LB-13-F-2477 Diodes Incorporated Description: DIODE
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar
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DMN31D5UDA-7B DMN31D5UDA-7B Diodes Incorporated DMN31D5UDA.pdf Description: MOSFET 2N-CH 0.4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Produkt ist nicht verfügbar
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DMN31D5UDA-7B DMN31D5UDA-7B Diodes Incorporated DMN31D5UDA.pdf Description: MOSFET 2N-CH 0.4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
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74AUP1G32FS3-7 74AUP1G32FS3-7 Diodes Incorporated 74AUP1G32.pdf Description: IC GATE OR 1CH 2-INP DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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74AUP1G32FS3-7 74AUP1G32FS3-7 Diodes Incorporated 74AUP1G32.pdf Description: IC GATE OR 1CH 2-INP DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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74AUP1G02FS3-7 74AUP1G02FS3-7 Diodes Incorporated 74AUP1G02.pdf Description: IC GATE NOR 1CH 2-INP DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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74AUP1G02FS3-7 74AUP1G02FS3-7 Diodes Incorporated 74AUP1G02.pdf Description: IC GATE NOR 1CH 2-INP DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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74AUP1G06FS3-7 74AUP1G06FS3-7 Diodes Incorporated 74AUP1G06.pdf Description: IC INVERTER 1CH 1-INP DFN0808-4
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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74AUP1G06FS3-7 74AUP1G06FS3-7 Diodes Incorporated 74AUP1G06.pdf Description: IC INVERTER 1CH 1-INP DFN0808-4
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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74AUP1G09FS3-7 74AUP1G09FS3-7 Diodes Incorporated 74AUP1G09.pdf Description: IC GATE AND 1CH 2-INP DFN0808-4
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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74AUP1G09FS3-7 74AUP1G09FS3-7 Diodes Incorporated 74AUP1G09.pdf Description: IC GATE AND 1CH 2-INP DFN0808-4
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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BC847BFAQ-7B Diodes Incorporated BC847BFAQ.pdf Description: TRANS NPN 45V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN0806-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 435 mW
Qualification: AEC-Q101
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BC847BFAQ-7B Diodes Incorporated BC847BFAQ.pdf Description: TRANS NPN 45V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN0806-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 435 mW
Qualification: AEC-Q101
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500+0.2 EUR
1000+0.15 EUR
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5000+0.12 EUR
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DMC31D5UDA-7B DMC31D5UDA-7B Diodes Incorporated DMC31D5UDA.pdf Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
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DMC31D5UDA-7B DMC31D5UDA-7B Diodes Incorporated DMC31D5UDA.pdf Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
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DMP22D5UFA-7B DMP22D5UFA-7B Diodes Incorporated DMP22D5UFA.pdf Description: MOSFET BVDSS: 8V~24V X2-DFN0806-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 16 V
Produkt ist nicht verfügbar
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DMN2991UFA-7B DMN2991UFA-7B Diodes Incorporated DMN2991UFA.pdf Description: MOSFET BVDSS: 8V~24V X2-DFN0806-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14.6 pF @ 16 V
Produkt ist nicht verfügbar
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DMP32D9UFA-7B DMP32D9UFA-7B Diodes Incorporated DMP32D9UFA.pdf Description: MOSFET BVDSS: 25V~30V X2-DFN0806
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V
Produkt ist nicht verfügbar
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DMN31D5UFA-7B DMN31D5UFA-7B Diodes Incorporated DMN31D5UFA.pdf Description: MOSFET BVDSS: 25V~30V X2-DFN0806
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
Produkt ist nicht verfügbar
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DMP32D9UDAQ-7B DMP32D9UDAQ-7B Diodes Incorporated DMP32D9UDAQ.pdf Description: MOSFET 2P-CH 30V 0.22A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 360mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.8pF @ 15V
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
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10000+0.065 EUR
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DMC31D5UDAQ-7B DMC31D5UDAQ-7B Diodes Incorporated DMC31D5UDAQ.pdf Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V, 21.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V, 0.35nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ZXTP2012ASTZ ZXTP2012A.pdf
ZXTP2012ASTZ
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 3.5A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 400mA, 4A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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ZXTP2012ASTZ ZXTP2012A.pdf
ZXTP2012ASTZ
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 3.5A E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 400mA, 4A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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ZXTP2012A ZXTP2012A.pdf
ZXTP2012A
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 3.5A TO92-3
Packaging: Bulk
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 400mA, 4A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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Anzahl Preis
4000+0.75 EUR
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ZXTP2012ZQTA ZXTP2012Z.pdf
ZXTP2012ZQTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 4.3A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 215mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 4.3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Qualification: AEC-Q101
auf Bestellung 349000 Stücke:
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Anzahl Preis
1000+0.64 EUR
2000+0.6 EUR
5000+0.57 EUR
10000+0.55 EUR
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ZXTP2012ZQTA ZXTP2012Z.pdf
ZXTP2012ZQTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 4.3A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 215mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 4.3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Qualification: AEC-Q101
auf Bestellung 349000 Stücke:
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Anzahl Preis
13+1.46 EUR
15+1.19 EUR
100+0.93 EUR
500+0.78 EUR
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PI5C3384QEX PI5C3384%28C%29.pdf
PI5C3384QEX
Hersteller: Diodes Incorporated
Description: IC BUS SWITCH 5 X 1:1 24QSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 5 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 24-QSOP
Produkt ist nicht verfügbar
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PI5C3384QEX PI5C3384%28C%29.pdf
PI5C3384QEX
Hersteller: Diodes Incorporated
Description: IC BUS SWITCH 5 X 1:1 24QSOP
Packaging: Cut Tape (CT)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 5 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 24-QSOP
Produkt ist nicht verfügbar
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AP7365-30SNG-7 AP7365.pdf
AP7365-30SNG-7
Hersteller: Diodes Incorporated
Description: IC REG LIN 3V 600MA U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.4V @ 600mA
Protection Features: Over Current, Over Temperature
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3000+0.3 EUR
6000+0.27 EUR
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AP7365-30SNG-7 AP7365.pdf
AP7365-30SNG-7
Hersteller: Diodes Incorporated
Description: IC REG LIN 3V 600MA U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.4V @ 600mA
Protection Features: Over Current, Over Temperature
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13+1.37 EUR
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AP7365-10EG-13 AP7365.pdf
AP7365-10EG-13
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1V 600MA SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1V
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.6V @ 600mA
Protection Features: Over Current, Over Temperature
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2500+0.31 EUR
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AP7365-10EG-13 AP7365.pdf
AP7365-10EG-13
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1V 600MA SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1V
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.6V @ 600mA
Protection Features: Over Current, Over Temperature
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Anzahl Preis
13+1.37 EUR
22+0.83 EUR
26+0.68 EUR
100+0.52 EUR
250+0.44 EUR
500+0.39 EUR
1000+0.35 EUR
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ZHB6792TA ZHB6792.pdf
ZHB6792TA
Hersteller: Diodes Incorporated
Description: TRANS 2NPN/2PNP 70V 1A SM8
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Transistor Type: 2 NPN, 2 PNP (H-Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SM8
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1000+1.78 EUR
2000+1.66 EUR
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ZHB6792TA ZHB6792.pdf
ZHB6792TA
Hersteller: Diodes Incorporated
Description: TRANS 2NPN/2PNP 70V 1A SM8
Packaging: Cut Tape (CT)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Transistor Type: 2 NPN, 2 PNP (H-Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SM8
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Anzahl Preis
4+5.21 EUR
10+3.4 EUR
100+2.37 EUR
500+1.93 EUR
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DMT32M5LPS-13 DMT32M5LPS.pdf
DMT32M5LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 150A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
auf Bestellung 1847500 Stücke:
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Anzahl Preis
2500+0.53 EUR
5000+0.49 EUR
7500+0.47 EUR
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DMT32M5LPS-13 DMT32M5LPS.pdf
DMT32M5LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 150A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
auf Bestellung 1849905 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
16+1.17 EUR
100+0.81 EUR
500+0.68 EUR
1000+0.58 EUR
Mindestbestellmenge: 14
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DMT32M5LFG-13 DMT32M5LFG.pdf
DMT32M5LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 831000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.75 EUR
6000+0.72 EUR
9000+0.68 EUR
Mindestbestellmenge: 3000
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DMT32M5LFG-13 DMT32M5LFG.pdf
DMT32M5LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 833856 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.81 EUR
12+1.49 EUR
100+1.16 EUR
500+0.98 EUR
1000+0.8 EUR
Mindestbestellmenge: 10
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DMT32M5LFG-7 DMT32M5LFG.pdf
DMT32M5LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.75 EUR
6000+0.72 EUR
10000+0.68 EUR
Mindestbestellmenge: 2000
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DMT32M5LFG-7 DMT32M5LFG.pdf
DMT32M5LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 29928 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.81 EUR
12+1.49 EUR
100+1.16 EUR
500+0.98 EUR
1000+0.8 EUR
Mindestbestellmenge: 10
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DMT32M4LFG-7 DMT32M4LFG.pdf
DMT32M4LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V
Produkt ist nicht verfügbar
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DMT32M4LFG-13 DMT32M4LFG.pdf
DMT32M4LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V
Produkt ist nicht verfügbar
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PI3EQX5801ZDEX PI3EQX5801-PB.pdf
PI3EQX5801ZDEX
Hersteller: Diodes Incorporated
Description: IC REDRIVER USB 3.0 1CH 20TQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Delay Time: 1.0ns
Number of Channels: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.5V, 3.3V
Applications: USB 3.0
Data Rate (Max): 5Gbps
Supplier Device Package: 20-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
auf Bestellung 206500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+4.98 EUR
Mindestbestellmenge: 3500
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PI3EQX5801ZDEX PI3EQX5801-PB.pdf
PI3EQX5801ZDEX
Hersteller: Diodes Incorporated
Description: IC REDRIVER USB 3.0 1CH 20TQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Delay Time: 1.0ns
Number of Channels: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.5V, 3.3V
Applications: USB 3.0
Data Rate (Max): 5Gbps
Supplier Device Package: 20-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
auf Bestellung 208167 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.93 EUR
10+8.91 EUR
25+8.43 EUR
100+7.3 EUR
250+6.93 EUR
500+6.22 EUR
1000+5.24 EUR
Mindestbestellmenge: 2
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ZVN3310ASTZ ZVN3310A.pdf
ZVN3310ASTZ
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 200MA E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
auf Bestellung 68000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.44 EUR
4000+0.41 EUR
6000+0.4 EUR
Mindestbestellmenge: 2000
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GBU25JL_HF GBU25JL_LS.pdf
Hersteller: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE GBU TUB
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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AH1887-ZG-7 AH1887.pdf
AH1887-ZG-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.3V
Technology: Hall Effect
Sensing Range: ±5mT Trip, ±0.6mT Release
Current - Supply (Max): 12µA
Supplier Device Package: SOT-553
Test Condition: 25°C
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.7 EUR
6000+0.68 EUR
9000+0.67 EUR
15000+0.66 EUR
Mindestbestellmenge: 3000
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AH1887-ZG-7 AH1887.pdf
AH1887-ZG-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.3V
Technology: Hall Effect
Sensing Range: ±5mT Trip, ±0.6mT Release
Current - Supply (Max): 12µA
Supplier Device Package: SOT-553
Test Condition: 25°C
auf Bestellung 56816 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
17+1.06 EUR
25+0.96 EUR
100+0.84 EUR
250+0.79 EUR
500+0.76 EUR
Mindestbestellmenge: 12
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AP9101CAK6-BBTRG1
AP9101CAK6-BBTRG1
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
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AP9101CAK6-BDTRG1
AP9101CAK6-BDTRG1
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
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74LVC2G32RA3-7 74LVC2G32.pdf
74LVC2G32RA3-7
Hersteller: Diodes Incorporated
Description: IC GATE OR 2CH 2-INP DFN1210-8
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1210-8
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 40 µA
Produkt ist nicht verfügbar
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74LVC2G32RA3-7 74LVC2G32.pdf
74LVC2G32RA3-7
Hersteller: Diodes Incorporated
Description: IC GATE OR 2CH 2-INP DFN1210-8
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1210-8
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 40 µA
auf Bestellung 3484 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
45+0.39 EUR
55+0.32 EUR
100+0.24 EUR
250+0.2 EUR
500+0.18 EUR
1000+0.15 EUR
2500+0.13 EUR
Mindestbestellmenge: 27
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AH277AZ4-BG1 AH277A.pdf
AH277AZ4-BG1
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH TO94
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 4-SSIP
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3.5V ~ 16V
Technology: Hall Effect
Sensing Range: 7mT Trip, -7mT Release
Current - Output (Max): 400mA
Current - Supply (Max): 16mA
Supplier Device Package: TO-94
Test Condition: 25°C
Produkt ist nicht verfügbar
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AH277AZ4-AG1 AH277A.pdf
AH277AZ4-AG1
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH TO94
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 4-SSIP
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3.5V ~ 16V
Technology: Hall Effect
Sensing Range: 5mT Trip, -5mT Release
Current - Output (Max): 400mA
Current - Supply (Max): 16mA
Supplier Device Package: TO-94
Test Condition: 25°C
Produkt ist nicht verfügbar
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DMN32D0LV-7 DMN32D0LV.pdf
DMN32D0LV-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.68A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.073 EUR
6000+0.066 EUR
9000+0.063 EUR
15000+0.059 EUR
Mindestbestellmenge: 3000
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DMN32D0LV-7 DMN32D0LV.pdf
DMN32D0LV-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.68A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 15946 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
94+0.19 EUR
140+0.13 EUR
500+0.096 EUR
1000+0.086 EUR
Mindestbestellmenge: 67
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MBR2150VG-E1 MBR2150.pdf
MBR2150VG-E1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
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MBR2150VG-G1 MBR2150.pdf
MBR2150VG-G1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
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MBR2150VGTR-G1 MBR2150.pdf
MBR2150VGTR-G1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
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MBR2150VRTR-E1 MBR2150.pdf
MBR2150VRTR-E1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 150V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
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B340LB-13-F-2477
B340LB-13-F-2477
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar
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DMN31D5UDA-7B DMN31D5UDA.pdf
DMN31D5UDA-7B
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 0.4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Produkt ist nicht verfügbar
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DMN31D5UDA-7B DMN31D5UDA.pdf
DMN31D5UDA-7B
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 0.4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
auf Bestellung 7036 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
68+0.26 EUR
138+0.13 EUR
500+0.11 EUR
1000+0.074 EUR
2000+0.064 EUR
5000+0.06 EUR
Mindestbestellmenge: 46
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74AUP1G32FS3-7 74AUP1G32.pdf
74AUP1G32FS3-7
Hersteller: Diodes Incorporated
Description: IC GATE OR 1CH 2-INP DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.16 EUR
10000+0.15 EUR
25000+0.14 EUR
50000+0.13 EUR
Mindestbestellmenge: 5000
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74AUP1G32FS3-7 74AUP1G32.pdf
74AUP1G32FS3-7
Hersteller: Diodes Incorporated
Description: IC GATE OR 1CH 2-INP DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
37+0.49 EUR
40+0.44 EUR
100+0.33 EUR
250+0.3 EUR
500+0.25 EUR
1000+0.19 EUR
2500+0.17 EUR
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74AUP1G02FS3-7 74AUP1G02.pdf
74AUP1G02FS3-7
Hersteller: Diodes Incorporated
Description: IC GATE NOR 1CH 2-INP DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.16 EUR
10000+0.15 EUR
Mindestbestellmenge: 5000
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74AUP1G02FS3-7 74AUP1G02.pdf
74AUP1G02FS3-7
Hersteller: Diodes Incorporated
Description: IC GATE NOR 1CH 2-INP DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
37+0.49 EUR
40+0.44 EUR
100+0.33 EUR
250+0.3 EUR
500+0.25 EUR
1000+0.19 EUR
2500+0.17 EUR
Mindestbestellmenge: 30
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74AUP1G06FS3-7 74AUP1G06.pdf
74AUP1G06FS3-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 1CH 1-INP DFN0808-4
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 515000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.18 EUR
10000+0.16 EUR
25000+0.15 EUR
35000+0.14 EUR
125000+0.13 EUR
Mindestbestellmenge: 5000
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74AUP1G06FS3-7 74AUP1G06.pdf
74AUP1G06FS3-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 1CH 1-INP DFN0808-4
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 515000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
31+0.57 EUR
38+0.47 EUR
100+0.35 EUR
250+0.3 EUR
500+0.26 EUR
1000+0.23 EUR
2500+0.2 EUR
Mindestbestellmenge: 19
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74AUP1G09FS3-7 74AUP1G09.pdf
74AUP1G09FS3-7
Hersteller: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP DFN0808-4
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 480000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.14 EUR
10000+0.13 EUR
Mindestbestellmenge: 5000
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74AUP1G09FS3-7 74AUP1G09.pdf
74AUP1G09FS3-7
Hersteller: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP DFN0808-4
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 484260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
74+0.24 EUR
84+0.21 EUR
100+0.18 EUR
250+0.17 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 50
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BC847BFAQ-7B BC847BFAQ.pdf
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN0806-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 435 mW
Qualification: AEC-Q101
auf Bestellung 210000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.1 EUR
50000+0.084 EUR
Mindestbestellmenge: 10000
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BC847BFAQ-7B BC847BFAQ.pdf
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN0806-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 435 mW
Qualification: AEC-Q101
auf Bestellung 210000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
37+0.49 EUR
100+0.25 EUR
500+0.2 EUR
1000+0.15 EUR
2000+0.13 EUR
5000+0.12 EUR
Mindestbestellmenge: 25
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DMC31D5UDA-7B DMC31D5UDA.pdf
DMC31D5UDA-7B
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
auf Bestellung 4070000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.13 EUR
30000+0.12 EUR
50000+0.11 EUR
100000+0.1 EUR
Mindestbestellmenge: 10000
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DMC31D5UDA-7B DMC31D5UDA.pdf
DMC31D5UDA-7B
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
auf Bestellung 4075830 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
38+0.47 EUR
100+0.24 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.15 EUR
5000+0.14 EUR
Mindestbestellmenge: 28
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DMP22D5UFA-7B DMP22D5UFA.pdf
DMP22D5UFA-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN0806-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 16 V
Produkt ist nicht verfügbar
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DMN2991UFA-7B DMN2991UFA.pdf
DMN2991UFA-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN0806-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14.6 pF @ 16 V
Produkt ist nicht verfügbar
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DMP32D9UFA-7B DMP32D9UFA.pdf
DMP32D9UFA-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0806
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V
Produkt ist nicht verfügbar
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DMN31D5UFA-7B DMN31D5UFA.pdf
DMN31D5UFA-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0806
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
Produkt ist nicht verfügbar
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DMP32D9UDAQ-7B DMP32D9UDAQ.pdf
DMP32D9UDAQ-7B
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 0.22A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 360mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.8pF @ 15V
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 240000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.065 EUR
Mindestbestellmenge: 10000
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DMC31D5UDAQ-7B DMC31D5UDAQ.pdf
DMC31D5UDAQ-7B
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V, 21.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V, 0.35nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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