Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (73295) > Seite 628 nach 1222
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3.0SMCJ28CAQ-13 | Diodes Incorporated |
Description: TVS DIODE 28VWM 45.4VC SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 66.1A Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 31.1V Voltage - Clamping (Max) @ Ipp: 45.4V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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3.0SMCJ28CAQ-13 | Diodes Incorporated |
Description: TVS DIODE 28VWM 45.4VC SMCQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 3000W (3kW) Voltage - Clamping (Max) @ Ipp: 45.4V Voltage - Breakdown (Min): 31.1V Bidirectional Channels: 1 Supplier Device Package: SMC Voltage - Reverse Standoff (Typ): 28V Current - Peak Pulse (10/1000µs): 66.1A Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
auf Bestellung 1154 Stücke: Lieferzeit 10-14 Tag (e) |
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KK3800001 | Diodes Incorporated |
Description: XTAL OSC XO 38.0000KHZ CMOSPackaging: Tape & Reel (TR) Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Frequency: 38 kHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KK3800001 | Diodes Incorporated |
Description: XTAL OSC XO 38.0000KHZ CMOSPackaging: Cut Tape (CT) Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Frequency: 38 kHz Base Resonator: Crystal |
auf Bestellung 2777 Stücke: Lieferzeit 10-14 Tag (e) |
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AP7315-25W5-7 | Diodes Incorporated |
Description: IC REG LINEAR 2.5V 150MA SOT-25Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: SOT-25 Voltage - Output (Min/Fixed): 2.5V Control Features: Enable PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.32V @ 150mA Protection Features: Over Current Current - Supply (Max): 100 µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AP7315-25W5-7 | Diodes Incorporated |
Description: IC REG LINEAR 2.5V 150MA SOT-25Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: SOT-25 Voltage - Output (Min/Fixed): 2.5V Control Features: Enable PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.32V @ 150mA Protection Features: Over Current Current - Supply (Max): 100 µA |
auf Bestellung 1349 Stücke: Lieferzeit 10-14 Tag (e) |
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AL58263T24E-13 | Diodes Incorporated |
Description: IC LED DVR LINEAR 55MA 24TSSOPPackaging: Tape & Reel (TR) Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad Voltage - Output: 15V Mounting Type: Surface Mount Number of Outputs: 16 Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 55mA Internal Switch(s): No Topology: Constant Current Supplier Device Package: 24-TSSOP-EP (Type A1) Dimming: PWM Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V |
auf Bestellung 675000 Stücke: Lieferzeit 10-14 Tag (e) |
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AL58263T24E-13 | Diodes Incorporated |
Description: IC LED DVR LINEAR 55MA 24TSSOPPackaging: Cut Tape (CT) Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad Voltage - Output: 15V Mounting Type: Surface Mount Number of Outputs: 16 Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 55mA Internal Switch(s): No Topology: Constant Current Supplier Device Package: 24-TSSOP-EP (Type A1) Dimming: PWM Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V |
auf Bestellung 675868 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR3U100LP-7 | Diodes Incorporated |
Description: DIODE SBR 100V 3A U-DFN3030-8Current - Reverse Leakage @ Vr: 200 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: U-DFN3030-8 Current - Average Rectified (Io): 3A Technology: Super Barrier Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Tape & Reel (TR) |
auf Bestellung 700 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 700 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SBR3U100LP-7 | Diodes Incorporated |
Description: DIODE SBR 100V 3A U-DFN3030-8Current - Reverse Leakage @ Vr: 200 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: U-DFN3030-8 Current - Average Rectified (Io): 3A Technology: Super Barrier Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Cut Tape (CT) |
auf Bestellung 1338 Stücke: Lieferzeit 10-14 Tag (e) |
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| TT4TM | Diodes Incorporated |
Description: Medium/High Power Bridge TTL T&RPackaging: Bulk Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TTL Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FW4090001 | Diodes Incorporated |
Description: CRYSTAL 40.9600MHZ 6PF SMD Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 6pF Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 125°C Frequency Stability: ±50ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Height - Seated (Max): 0.022" (0.55mm) ESR (Equivalent Series Resistance): 60 Ohms Frequency: 40.96 MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DMPH1006UPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 12V 80A PWRDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V Power Dissipation (Max): 3.2W Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 6334 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMPH1006UPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 12V 80A PWRDI5060-8Power Dissipation (Max): 3.2W Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 6334 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 8 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Grade: Automotive Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 1V @ 250µA Packaging: Cut Tape (CT) |
auf Bestellung 4984 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN60H80DHFF-7 | Diodes Incorporated |
Description: MOSFET N-CH 600V 80MA SOT23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FX1200065 | Diodes Incorporated |
Description: CRYSTAL SURFACE MOUNTPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.236" L x 0.138" W (6.00mm x 3.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Mode: Fundamental Height - Seated (Max): 0.053" (1.35mm) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FN2500226 | Diodes Incorporated |
Description: XTAL OSC XO 25.0000MHZ CMOSPackaging: Tape & Reel (TR) Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Output: CMOS Type: XO (Standard) Operating Temperature: -20°C ~ 95°C Voltage - Supply: 3.3V Frequency: 25 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SMBJ45CAQ-13-F | Diodes Incorporated |
Description: TRANSIENT VOLTAGE SUPPRESSOR SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 8.3A Voltage - Reverse Standoff (Typ): 45V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 50V Voltage - Clamping (Max) @ Ipp: 72.7V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FN3300067 | Diodes Incorporated |
Description: XTAL OSC XO 33.0000MHZ CMOSPackaging: Tape & Reel (TR) Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Output: CMOS Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Voltage - Supply: 3.3V Frequency: 33 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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D15V0S1U2LP1610-7 | Diodes Incorporated |
Description: SURGE PROTECTION PP U-DFN1610-2Packaging: Tape & Reel (TR) Package / Case: 0603 (1610 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 270pF @ 1MHz Current - Peak Pulse (10/1000µs): 48A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: U-DFN1610-2 (Type B) Unidirectional Channels: 1 Voltage - Breakdown (Min): 17V Voltage - Clamping (Max) @ Ipp: 30V Power Line Protection: No |
auf Bestellung 410000 Stücke: Lieferzeit 10-14 Tag (e) |
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D15V0S1U2LP1610-7 | Diodes Incorporated |
Description: SURGE PROTECTION PP U-DFN1610-2Packaging: Cut Tape (CT) Package / Case: 0603 (1610 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 270pF @ 1MHz Current - Peak Pulse (10/1000µs): 48A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: U-DFN1610-2 (Type B) Unidirectional Channels: 1 Voltage - Breakdown (Min): 17V Voltage - Clamping (Max) @ Ipp: 30V Power Line Protection: No |
auf Bestellung 419864 Stücke: Lieferzeit 10-14 Tag (e) |
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D12V0S1U2LP1610-7 | Diodes Incorporated |
Description: TVS DIODE 12VWM 20V UDFN16102Packaging: Tape & Reel (TR) Package / Case: 0603 (1610 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 400pF @ 1MHz Current - Peak Pulse (10/1000µs): 65A Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: U-DFN1610-2 (Type B) Unidirectional Channels: 1 Voltage - Breakdown (Min): 13V Voltage - Clamping (Max) @ Ipp: 20V Power Line Protection: No |
auf Bestellung 280000 Stücke: Lieferzeit 10-14 Tag (e) |
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D12V0S1U2LP1610-7 | Diodes Incorporated |
Description: TVS DIODE 12VWM 20V UDFN16102Packaging: Cut Tape (CT) Package / Case: 0603 (1610 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 400pF @ 1MHz Current - Peak Pulse (10/1000µs): 65A Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: U-DFN1610-2 (Type B) Unidirectional Channels: 1 Voltage - Breakdown (Min): 13V Voltage - Clamping (Max) @ Ipp: 20V Power Line Protection: No |
auf Bestellung 287170 Stücke: Lieferzeit 10-14 Tag (e) |
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D22V0S1U2LP1610-7 | Diodes Incorporated |
Description: TVS DIODE 22VWM 38V UDFN16102Packaging: Tape & Reel (TR) Package / Case: 0603 (1610 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 226pF @ 1MHz Current - Peak Pulse (10/1000µs): 32A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: U-DFN1610-2 (Type B) Unidirectional Channels: 1 Voltage - Breakdown (Min): 24V Voltage - Clamping (Max) @ Ipp: 38V Power Line Protection: No |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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D22V0S1U2LP1610-7 | Diodes Incorporated |
Description: TVS DIODE 22VWM 38V UDFN16102Packaging: Cut Tape (CT) Package / Case: 0603 (1610 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 226pF @ 1MHz Current - Peak Pulse (10/1000µs): 32A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: U-DFN1610-2 (Type B) Unidirectional Channels: 1 Voltage - Breakdown (Min): 24V Voltage - Clamping (Max) @ Ipp: 38V Power Line Protection: No |
auf Bestellung 4771 Stücke: Lieferzeit 10-14 Tag (e) |
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D20V0S1U2LP1610-7 | Diodes Incorporated |
Description: SURGE PROTECTION PP U-DFN1610-2Packaging: Tape & Reel (TR) Package / Case: 0603 (1610 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 242pF @ 1MHz Current - Peak Pulse (10/1000µs): 37A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: U-DFN1610-2 (Type B) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22V Voltage - Clamping (Max) @ Ipp: 36V Power Line Protection: No |
auf Bestellung 550000 Stücke: Lieferzeit 10-14 Tag (e) |
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D20V0S1U2LP1610-7 | Diodes Incorporated |
Description: SURGE PROTECTION PP U-DFN1610-2Packaging: Cut Tape (CT) Package / Case: 0603 (1610 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 242pF @ 1MHz Current - Peak Pulse (10/1000µs): 37A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: U-DFN1610-2 (Type B) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22V Voltage - Clamping (Max) @ Ipp: 36V Power Line Protection: No |
auf Bestellung 558735 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6018LPS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V POWERDI506Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V Power Dissipation (Max): 2.6W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3505 pF @ 30 V |
auf Bestellung 12413 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6018LPSQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V POWERDI506Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V Power Dissipation (Max): 2.6W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3505 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 994 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBZ5251BW-7-F | Diodes Incorporated |
Description: DIODE ZENER 22V 200MW SOT323Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 29 Ohms Supplier Device Package: SOT-323 Grade: Automotive Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 17 V Qualification: AEC-Q101 |
auf Bestellung 108000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBZ5221BW-7-F | Diodes Incorporated |
Description: DIODE ZENER 2.4V 200MW SOT323Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 2.4 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOT-323 Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 µA @ 1 V |
auf Bestellung 69000 Stücke: Lieferzeit 10-14 Tag (e) |
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AP393AM8G-13 | Diodes Incorporated |
Description: IC COMPARATOR 2 GEN PUR 8MSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: CMOS, DTL, ECL, MOS, Open-Collector, TTL Mounting Type: Surface Mount Number of Elements: 2 Type: Standard (General Purpose) Operating Temperature: 0°C ~ 70°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: 8-MSOP Current - Quiescent (Max): 2.5mA Voltage - Input Offset (Max): 8mV @ 5V Current - Input Bias (Max): 0.4µA @ 5V Current - Output (Typ): 16mA @ 5V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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AP393AM8G-13 | Diodes Incorporated |
Description: IC COMPARATOR 2 GEN PUR 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: CMOS, DTL, ECL, MOS, Open-Collector, TTL Mounting Type: Surface Mount Number of Elements: 2 Type: Standard (General Purpose) Operating Temperature: 0°C ~ 70°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: 8-MSOP Current - Quiescent (Max): 2.5mA Voltage - Input Offset (Max): 8mV @ 5V Current - Input Bias (Max): 0.4µA @ 5V Current - Output (Typ): 16mA @ 5V |
auf Bestellung 4990 Stücke: Lieferzeit 10-14 Tag (e) |
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BS107PSTZ | Diodes Incorporated |
Description: MOSFET N-CH 200V 120MA E-LINEPackaging: Tape & Box (TB) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 5V Power Dissipation (Max): 500mW (Ta) Supplier Device Package: E-Line (TO-92 compatible) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH69M8LFVWQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V-60V POWERDI333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 148000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH69M8LFVWQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V-60V POWERDI333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 149330 Stücke: Lieferzeit 10-14 Tag (e) |
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LSF0204ZB14-13 | Diodes Incorporated |
Description: LOGIC ULS V-QFN3535-14 T&R 5KPackaging: Tape & Reel (TR) Package / Case: 14-VFQFN Exposed Pad Output Type: Open Drain, Push-Pull, Tri-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100MHz Supplier Device Package: 14-QFN (3.5x3.5) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 0.8 V ~ 5.5 V Voltage - VCCB: 1.8 V ~ 5.5 V Number of Circuits: 1 |
auf Bestellung 50000 Stücke: Lieferzeit 10-14 Tag (e) |
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LSF0204T14-13 | Diodes Incorporated |
Description: LOGIC ULS TSSOP-14 T&R 2.5KPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Open Drain, Push-Pull, Tri-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100MHz Supplier Device Package: 14-TSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 0.8 V ~ 4.5 V Voltage - VCCB: 1.8 V ~ 5.5 V Number of Circuits: 1 |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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LSF0204QT14-13 | Diodes Incorporated |
Description: LOGIC ULS TSSOP-14 T&R 2.5KPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100MHz Supplier Device Package: 14-TSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 0.8 V ~ 4.5 V Voltage - VCCB: 1.8 V ~ 5.5 V Grade: Automotive Number of Circuits: 1 Qualification: AEC-Q100 |
auf Bestellung 37500 Stücke: Lieferzeit 10-14 Tag (e) |
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D12V0S1U2LP1610Q-7 | Diodes Incorporated |
Description: TVS DIODE 12VWM 20V UDFN16102Packaging: Tape & Reel (TR) Package / Case: 0603 (1610 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 400pF @ 1MHz Current - Peak Pulse (10/1000µs): 65A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: U-DFN1610-2 (Type B) Unidirectional Channels: 1 Voltage - Breakdown (Min): 13V Voltage - Clamping (Max) @ Ipp: 20V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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D12V0S1U2LP1610Q-7 | Diodes Incorporated |
Description: TVS DIODE 12VWM 20V UDFN16102Packaging: Cut Tape (CT) Package / Case: 0603 (1610 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 400pF @ 1MHz Current - Peak Pulse (10/1000µs): 65A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: U-DFN1610-2 (Type B) Unidirectional Channels: 1 Voltage - Breakdown (Min): 13V Voltage - Clamping (Max) @ Ipp: 20V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 19285 Stücke: Lieferzeit 10-14 Tag (e) |
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LM4040B33FTA | Diodes Incorporated |
Description: IC VREF SHUNT 0.2% SOT23Tolerance: ±0.2% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Temperature Coefficient: 100ppm/°C Output Type: Fixed Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 3.3V Noise - 10Hz to 10kHz: 35µVrms Current - Cathode: 70 µA Current - Output: 15 mA |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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LM4040B33FTA | Diodes Incorporated |
Description: IC VREF SHUNT 0.2% SOT23Tolerance: ±0.2% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Temperature Coefficient: 100ppm/°C Output Type: Fixed Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 3.3V Noise - 10Hz to 10kHz: 35µVrms Current - Cathode: 70 µA Current - Output: 15 mA |
auf Bestellung 18238 Stücke: Lieferzeit 10-14 Tag (e) |
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FL1690007 | Diodes Incorporated |
Description: CRYSTAL 16.9344MHZ 16PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 16pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Frequency Tolerance: ±50ppm Operating Mode: Fundamental Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 80 Ohms Frequency: 16.9344 MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SMF4L18CAQ-7 | Diodes Incorporated |
Description: TRANSIENT VOLTAGE SUPPRESSOR PPPackaging: Tape & Reel (TR) Package / Case: DO-219AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 13.7A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: DO-219AA Bidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DMTH8008LPSQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V Power Dissipation (Max): 1.6W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DMTH8008LPSQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V Power Dissipation (Max): 1.6W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 1894 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH32M5LPSQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 170A PWRDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 105000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH32M5LPSQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 170A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 107371 Stücke: Lieferzeit 10-14 Tag (e) |
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DJT4030P-13 | Diodes Incorporated |
Description: TRANS PNP 40V 3A SOT-223-3Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V Frequency - Transition: 150MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1.2 W |
auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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DJT4030P-13 | Diodes Incorporated |
Description: TRANS PNP 40V 3A SOT-223-3Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V Frequency - Transition: 150MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1.2 W |
auf Bestellung 61706 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN31D4UFZ-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V X2-DFN0606Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0606-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V |
auf Bestellung 1590000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN31D4UFZ-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V X2-DFN0606Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0606-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V |
auf Bestellung 1599389 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN31D6UT-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 350MA SOT523Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Power Dissipation (Max): 320mW Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V |
auf Bestellung 960000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN31D6UT-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 350MA SOT523Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Power Dissipation (Max): 320mW Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V |
auf Bestellung 962995 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN31D5L-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 500MA SOT23 T&RPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V |
auf Bestellung 420000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN31D5L-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 500MA SOT23 T&RPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V |
auf Bestellung 420000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN31D5L-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 500MA SOT23 T&RPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V |
auf Bestellung 5316000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN31D5L-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 500MA SOT23 T&RPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V |
auf Bestellung 5320042 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN31D5UDAQ-7B | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.4A 6DFNPackaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 370mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-6 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 3.0SMCJ28CAQ-13 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 28VWM 45.4VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 28VWM 45.4VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 3.0SMCJ28CAQ-13 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 28VWM 45.4VC SMC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Bidirectional Channels: 1
Supplier Device Package: SMC
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 66.1A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Description: TVS DIODE 28VWM 45.4VC SMC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Bidirectional Channels: 1
Supplier Device Package: SMC
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 66.1A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 1154 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.87 EUR |
| 12+ | 1.81 EUR |
| 100+ | 1.2 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.86 EUR |
| KK3800001 |
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Hersteller: Diodes Incorporated
Description: XTAL OSC XO 38.0000KHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 38 kHz
Base Resonator: Crystal
Description: XTAL OSC XO 38.0000KHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 38 kHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
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| KK3800001 |
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Hersteller: Diodes Incorporated
Description: XTAL OSC XO 38.0000KHZ CMOS
Packaging: Cut Tape (CT)
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 38 kHz
Base Resonator: Crystal
Description: XTAL OSC XO 38.0000KHZ CMOS
Packaging: Cut Tape (CT)
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 38 kHz
Base Resonator: Crystal
auf Bestellung 2777 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.98 EUR |
| 10+ | 2.58 EUR |
| 25+ | 2.44 EUR |
| 50+ | 2.34 EUR |
| 100+ | 2.24 EUR |
| 250+ | 2.12 EUR |
| 500+ | 2.03 EUR |
| 1000+ | 1.95 EUR |
| AP7315-25W5-7 |
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Hersteller: Diodes Incorporated
Description: IC REG LINEAR 2.5V 150MA SOT-25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.32V @ 150mA
Protection Features: Over Current
Current - Supply (Max): 100 µA
Description: IC REG LINEAR 2.5V 150MA SOT-25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.32V @ 150mA
Protection Features: Over Current
Current - Supply (Max): 100 µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| AP7315-25W5-7 |
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Hersteller: Diodes Incorporated
Description: IC REG LINEAR 2.5V 150MA SOT-25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.32V @ 150mA
Protection Features: Over Current
Current - Supply (Max): 100 µA
Description: IC REG LINEAR 2.5V 150MA SOT-25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.32V @ 150mA
Protection Features: Over Current
Current - Supply (Max): 100 µA
auf Bestellung 1349 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 0.65 EUR |
| 47+ | 0.44 EUR |
| 53+ | 0.39 EUR |
| 100+ | 0.35 EUR |
| 250+ | 0.32 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.29 EUR |
| AL58263T24E-13 |
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Hersteller: Diodes Incorporated
Description: IC LED DVR LINEAR 55MA 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 15V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 55mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: 24-TSSOP-EP (Type A1)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Description: IC LED DVR LINEAR 55MA 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 15V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 55mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: 24-TSSOP-EP (Type A1)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
auf Bestellung 675000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.94 EUR |
| 5000+ | 0.92 EUR |
| 7500+ | 0.9 EUR |
| 12500+ | 0.89 EUR |
| AL58263T24E-13 |
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Hersteller: Diodes Incorporated
Description: IC LED DVR LINEAR 55MA 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 15V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 55mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: 24-TSSOP-EP (Type A1)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Description: IC LED DVR LINEAR 55MA 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 15V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 55mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: 24-TSSOP-EP (Type A1)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
auf Bestellung 675868 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.95 EUR |
| 15+ | 1.42 EUR |
| 25+ | 1.29 EUR |
| 100+ | 1.13 EUR |
| 250+ | 1.06 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.98 EUR |
| SBR3U100LP-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 3A U-DFN3030-8
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: U-DFN3030-8
Current - Average Rectified (Io): 3A
Technology: Super Barrier
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
Description: DIODE SBR 100V 3A U-DFN3030-8
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: U-DFN3030-8
Current - Average Rectified (Io): 3A
Technology: Super Barrier
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
| SBR3U100LP-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 3A U-DFN3030-8
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: U-DFN3030-8
Current - Average Rectified (Io): 3A
Technology: Super Barrier
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Description: DIODE SBR 100V 3A U-DFN3030-8
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: U-DFN3030-8
Current - Average Rectified (Io): 3A
Technology: Super Barrier
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
auf Bestellung 1338 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.26 EUR |
| 15+ | 1.43 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.65 EUR |
| TT4TM |
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Hersteller: Diodes Incorporated
Description: Medium/High Power Bridge TTL T&R
Packaging: Bulk
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TTL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: Medium/High Power Bridge TTL T&R
Packaging: Bulk
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TTL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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| FW4090001 |
Hersteller: Diodes Incorporated
Description: CRYSTAL 40.9600MHZ 6PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 6pF
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.022" (0.55mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 40.96 MHz
Description: CRYSTAL 40.9600MHZ 6PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 6pF
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.022" (0.55mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 40.96 MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DMPH1006UPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 80A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 6334 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 12V 80A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 6334 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.73 EUR |
| DMPH1006UPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 80A PWRDI5060-8
Power Dissipation (Max): 3.2W
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6334 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 12V 80A PWRDI5060-8
Power Dissipation (Max): 3.2W
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6334 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Packaging: Cut Tape (CT)
auf Bestellung 4984 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.65 EUR |
| 16+ | 1.36 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.73 EUR |
| DMN60H80DHFF-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 600V 80MA SOT23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 80MA SOT23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| FX1200065 |
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Hersteller: Diodes Incorporated
Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.236" L x 0.138" W (6.00mm x 3.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Height - Seated (Max): 0.053" (1.35mm)
Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.236" L x 0.138" W (6.00mm x 3.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Height - Seated (Max): 0.053" (1.35mm)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| FN2500226 |
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Hersteller: Diodes Incorporated
Description: XTAL OSC XO 25.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 95°C
Voltage - Supply: 3.3V
Frequency: 25 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 25.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 95°C
Voltage - Supply: 3.3V
Frequency: 25 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| SMBJ45CAQ-13-F |
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Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TRANSIENT VOLTAGE SUPPRESSOR SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| FN3300067 |
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Hersteller: Diodes Incorporated
Description: XTAL OSC XO 33.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 33 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 33.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 33 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| D15V0S1U2LP1610-7 |
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Hersteller: Diodes Incorporated
Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 270pF @ 1MHz
Current - Peak Pulse (10/1000µs): 48A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 270pF @ 1MHz
Current - Peak Pulse (10/1000µs): 48A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
auf Bestellung 410000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.12 EUR |
| 30000+ | 0.12 EUR |
| 50000+ | 0.098 EUR |
| D15V0S1U2LP1610-7 |
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Hersteller: Diodes Incorporated
Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 270pF @ 1MHz
Current - Peak Pulse (10/1000µs): 48A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 270pF @ 1MHz
Current - Peak Pulse (10/1000µs): 48A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
auf Bestellung 419864 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 0.82 EUR |
| 38+ | 0.57 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.18 EUR |
| 2000+ | 0.14 EUR |
| D12V0S1U2LP1610-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 12VWM 20V UDFN16102
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
Description: TVS DIODE 12VWM 20V UDFN16102
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
auf Bestellung 280000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.087 EUR |
| D12V0S1U2LP1610-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 12VWM 20V UDFN16102
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
Description: TVS DIODE 12VWM 20V UDFN16102
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
auf Bestellung 287170 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 0.44 EUR |
| 70+ | 0.3 EUR |
| 160+ | 0.13 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.12 EUR |
| 2000+ | 0.11 EUR |
| 5000+ | 0.11 EUR |
| D22V0S1U2LP1610-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 22VWM 38V UDFN16102
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 226pF @ 1MHz
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Voltage - Clamping (Max) @ Ipp: 38V
Power Line Protection: No
Description: TVS DIODE 22VWM 38V UDFN16102
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 226pF @ 1MHz
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Voltage - Clamping (Max) @ Ipp: 38V
Power Line Protection: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| D22V0S1U2LP1610-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 22VWM 38V UDFN16102
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 226pF @ 1MHz
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Voltage - Clamping (Max) @ Ipp: 38V
Power Line Protection: No
Description: TVS DIODE 22VWM 38V UDFN16102
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 226pF @ 1MHz
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Voltage - Clamping (Max) @ Ipp: 38V
Power Line Protection: No
auf Bestellung 4771 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.75 EUR |
| 46+ | 0.46 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
| 2000+ | 0.17 EUR |
| D20V0S1U2LP1610-7 |
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Hersteller: Diodes Incorporated
Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 242pF @ 1MHz
Current - Peak Pulse (10/1000µs): 37A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22V
Voltage - Clamping (Max) @ Ipp: 36V
Power Line Protection: No
Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 242pF @ 1MHz
Current - Peak Pulse (10/1000µs): 37A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22V
Voltage - Clamping (Max) @ Ipp: 36V
Power Line Protection: No
auf Bestellung 550000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.13 EUR |
| 50000+ | 0.1 EUR |
| D20V0S1U2LP1610-7 |
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Hersteller: Diodes Incorporated
Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 242pF @ 1MHz
Current - Peak Pulse (10/1000µs): 37A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22V
Voltage - Clamping (Max) @ Ipp: 36V
Power Line Protection: No
Description: SURGE PROTECTION PP U-DFN1610-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 242pF @ 1MHz
Current - Peak Pulse (10/1000µs): 37A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22V
Voltage - Clamping (Max) @ Ipp: 36V
Power Line Protection: No
auf Bestellung 558735 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.86 EUR |
| 35+ | 0.61 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.18 EUR |
| 2000+ | 0.15 EUR |
| 5000+ | 0.14 EUR |
| DMP6018LPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V
Power Dissipation (Max): 2.6W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3505 pF @ 30 V
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V
Power Dissipation (Max): 2.6W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3505 pF @ 30 V
auf Bestellung 12413 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.22 EUR |
| 10+ | 2.67 EUR |
| 100+ | 2.13 EUR |
| 500+ | 1.8 EUR |
| 1000+ | 1.52 EUR |
| DMP6018LPSQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V
Power Dissipation (Max): 2.6W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3505 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V
Power Dissipation (Max): 2.6W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3505 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 994 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.9 EUR |
| 10+ | 3.15 EUR |
| 100+ | 2.15 EUR |
| 500+ | 1.74 EUR |
| MMBZ5251BW-7-F |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 22V 200MW SOT323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
Qualification: AEC-Q101
Description: DIODE ZENER 22V 200MW SOT323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
Qualification: AEC-Q101
auf Bestellung 108000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.12 EUR |
| 6000+ | 0.12 EUR |
| 9000+ | 0.1 EUR |
| 30000+ | 0.098 EUR |
| 75000+ | 0.081 EUR |
| MMBZ5221BW-7-F |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.4V 200MW SOT323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Description: DIODE ZENER 2.4V 200MW SOT323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 0.69 EUR |
| AP393AM8G-13 |
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Hersteller: Diodes Incorporated
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: CMOS, DTL, ECL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 8mV @ 5V
Current - Input Bias (Max): 0.4µA @ 5V
Current - Output (Typ): 16mA @ 5V
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: CMOS, DTL, ECL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 8mV @ 5V
Current - Input Bias (Max): 0.4µA @ 5V
Current - Output (Typ): 16mA @ 5V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.36 EUR |
| AP393AM8G-13 |
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Hersteller: Diodes Incorporated
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: CMOS, DTL, ECL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 8mV @ 5V
Current - Input Bias (Max): 0.4µA @ 5V
Current - Output (Typ): 16mA @ 5V
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: CMOS, DTL, ECL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 8mV @ 5V
Current - Input Bias (Max): 0.4µA @ 5V
Current - Output (Typ): 16mA @ 5V
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 0.82 EUR |
| 38+ | 0.56 EUR |
| 42+ | 0.5 EUR |
| 100+ | 0.44 EUR |
| 250+ | 0.4 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.37 EUR |
| BS107PSTZ |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 200V 120MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 5V
Power Dissipation (Max): 500mW (Ta)
Supplier Device Package: E-Line (TO-92 compatible)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 200V 120MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 5V
Power Dissipation (Max): 500mW (Ta)
Supplier Device Package: E-Line (TO-92 compatible)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.71 EUR |
| DMTH69M8LFVWQ-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 41V-60V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 148000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.54 EUR |
| 4000+ | 0.5 EUR |
| 6000+ | 0.48 EUR |
| 10000+ | 0.45 EUR |
| 14000+ | 0.43 EUR |
| 20000+ | 0.42 EUR |
| DMTH69M8LFVWQ-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 41V-60V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 149330 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.07 EUR |
| 17+ | 1.29 EUR |
| 100+ | 0.84 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.6 EUR |
| LSF0204ZB14-13 |
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Hersteller: Diodes Incorporated
Description: LOGIC ULS V-QFN3535-14 T&R 5K
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 14-QFN (3.5x3.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 5.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
Description: LOGIC ULS V-QFN3535-14 T&R 5K
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 14-QFN (3.5x3.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 5.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.26 EUR |
| LSF0204T14-13 |
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Hersteller: Diodes Incorporated
Description: LOGIC ULS TSSOP-14 T&R 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 14-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 4.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
Description: LOGIC ULS TSSOP-14 T&R 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 14-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 4.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.33 EUR |
| 5000+ | 0.32 EUR |
| 17500+ | 0.31 EUR |
| LSF0204QT14-13 |
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Hersteller: Diodes Incorporated
Description: LOGIC ULS TSSOP-14 T&R 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 14-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 4.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q100
Description: LOGIC ULS TSSOP-14 T&R 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 14-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 4.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q100
auf Bestellung 37500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.37 EUR |
| 5000+ | 0.36 EUR |
| 7500+ | 0.35 EUR |
| 25000+ | 0.33 EUR |
| D12V0S1U2LP1610Q-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 12VWM 20V UDFN16102
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 12VWM 20V UDFN16102
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.14 EUR |
| D12V0S1U2LP1610Q-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 12VWM 20V UDFN16102
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 12VWM 20V UDFN16102
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 19285 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 0.8 EUR |
| 44+ | 0.49 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| 2000+ | 0.18 EUR |
| 5000+ | 0.15 EUR |
| LM4040B33FTA |
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Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 0.2% SOT23
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.3V
Noise - 10Hz to 10kHz: 35µVrms
Current - Cathode: 70 µA
Current - Output: 15 mA
Description: IC VREF SHUNT 0.2% SOT23
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.3V
Noise - 10Hz to 10kHz: 35µVrms
Current - Cathode: 70 µA
Current - Output: 15 mA
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.76 EUR |
| 6000+ | 0.71 EUR |
| 9000+ | 0.69 EUR |
| 15000+ | 0.67 EUR |
| LM4040B33FTA |
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Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 0.2% SOT23
Tolerance: ±0.2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.3V
Noise - 10Hz to 10kHz: 35µVrms
Current - Cathode: 70 µA
Current - Output: 15 mA
Description: IC VREF SHUNT 0.2% SOT23
Tolerance: ±0.2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.3V
Noise - 10Hz to 10kHz: 35µVrms
Current - Cathode: 70 µA
Current - Output: 15 mA
auf Bestellung 18238 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.81 EUR |
| 12+ | 1.77 EUR |
| 25+ | 1.5 EUR |
| 100+ | 1.18 EUR |
| 250+ | 1.04 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.86 EUR |
| FL1690007 |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 16.9344MHZ 16PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 16pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±50ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 16.9344 MHz
Description: CRYSTAL 16.9344MHZ 16PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 16pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±50ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 16.9344 MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMF4L18CAQ-7 |
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Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-219AA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-219AA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMTH8008LPSQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMTH8008LPSQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1894 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.34 EUR |
| 15+ | 1.48 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.69 EUR |
| DMTH32M5LPSQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 170A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 170A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.9 EUR |
| DMTH32M5LPSQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 170A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 170A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 107371 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.37 EUR |
| 11+ | 1.92 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.13 EUR |
| 1000+ | 1.04 EUR |
| DJT4030P-13 |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.2 W
Description: TRANS PNP 40V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.2 W
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.37 EUR |
| 5000+ | 0.33 EUR |
| 7500+ | 0.32 EUR |
| 12500+ | 0.3 EUR |
| 17500+ | 0.29 EUR |
| DJT4030P-13 |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 3A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.2 W
Description: TRANS PNP 40V 3A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.2 W
auf Bestellung 61706 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.51 EUR |
| 23+ | 0.94 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.42 EUR |
| DMN31D4UFZ-7B |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
auf Bestellung 1590000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.06 EUR |
| 20000+ | 0.054 EUR |
| 30000+ | 0.051 EUR |
| 50000+ | 0.048 EUR |
| 70000+ | 0.045 EUR |
| 100000+ | 0.044 EUR |
| 250000+ | 0.039 EUR |
| DMN31D4UFZ-7B |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
auf Bestellung 1599389 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 56+ | 0.38 EUR |
| 93+ | 0.23 EUR |
| 150+ | 0.14 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.09 EUR |
| 2000+ | 0.08 EUR |
| 5000+ | 0.069 EUR |
| DMN31D6UT-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
Description: MOSFET N-CH 30V 350MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
auf Bestellung 960000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.1 EUR |
| 6000+ | 0.096 EUR |
| 9000+ | 0.08 EUR |
| 30000+ | 0.079 EUR |
| 75000+ | 0.07 EUR |
| 150000+ | 0.061 EUR |
| DMN31D6UT-7 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
Description: MOSFET N-CH 30V 350MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
auf Bestellung 962995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 35+ | 0.61 EUR |
| 50+ | 0.43 EUR |
| 102+ | 0.2 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.12 EUR |
| DMN31D5L-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 420000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.094 EUR |
| 30000+ | 0.093 EUR |
| 50000+ | 0.083 EUR |
| 100000+ | 0.074 EUR |
| 250000+ | 0.071 EUR |
| DMN31D5L-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 420000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 0.74 EUR |
| 43+ | 0.5 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.14 EUR |
| 2000+ | 0.12 EUR |
| 5000+ | 0.11 EUR |
| DMN31D5L-7 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 5316000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.12 EUR |
| 6000+ | 0.11 EUR |
| 9000+ | 0.094 EUR |
| 30000+ | 0.093 EUR |
| 75000+ | 0.083 EUR |
| 150000+ | 0.071 EUR |
| DMN31D5L-7 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 5320042 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 0.74 EUR |
| 43+ | 0.5 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.14 EUR |
| DMN31D5UDAQ-7B |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.4A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 0.4A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
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