Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (78561) > Seite 635 nach 1310

Wählen Sie Seite:   [  << Vorherige Seite ]  1 131 262 393 524 630 631 632 633 634 635 636 637 638 639 640 655 786 917 1048 1179 1310  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AP9101CAK6-BDTRG1 AP9101CAK6-BDTRG1 Diodes Incorporated AP9101C.pdf Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC2G32RA3-7 74LVC2G32RA3-7 Diodes Incorporated 74LVC2G32.pdf Description: IC GATE OR 2CH 2-INP DFN1210-8
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1210-8
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 40 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC2G32RA3-7 74LVC2G32RA3-7 Diodes Incorporated 74LVC2G32.pdf Description: IC GATE OR 2CH 2-INP DFN1210-8
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1210-8
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 40 µA
auf Bestellung 3484 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
45+0.39 EUR
55+0.32 EUR
100+0.24 EUR
250+0.20 EUR
500+0.18 EUR
1000+0.15 EUR
2500+0.13 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
AH277AZ4-BG1 AH277AZ4-BG1 Diodes Incorporated AH277A.pdf Description: MAGNETIC SWITCH LATCH TO94
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 4-SSIP
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3.5V ~ 16V
Technology: Hall Effect
Sensing Range: 7mT Trip, -7mT Release
Current - Output (Max): 400mA
Current - Supply (Max): 16mA
Supplier Device Package: TO-94
Test Condition: 25°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AH277AZ4-AG1 AH277AZ4-AG1 Diodes Incorporated AH277A.pdf Description: MAGNETIC SWITCH LATCH TO94
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 4-SSIP
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3.5V ~ 16V
Technology: Hall Effect
Sensing Range: 5mT Trip, -5mT Release
Current - Output (Max): 400mA
Current - Supply (Max): 16mA
Supplier Device Package: TO-94
Test Condition: 25°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN32D0LV-7 DMN32D0LV-7 Diodes Incorporated DMN32D0LV.pdf Description: MOSFET 2N-CH 30V 0.68A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.07 EUR
6000+0.07 EUR
9000+0.06 EUR
15000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMN32D0LV-7 DMN32D0LV-7 Diodes Incorporated DMN32D0LV.pdf Description: MOSFET 2N-CH 30V 0.68A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 15946 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
94+0.19 EUR
140+0.13 EUR
500+0.10 EUR
1000+0.09 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
MBR2150VG-E1 MBR2150VG-E1 Diodes Incorporated MBR2150.pdf Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2150VG-G1 MBR2150VG-G1 Diodes Incorporated MBR2150.pdf Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2150VGTR-G1 MBR2150VGTR-G1 Diodes Incorporated MBR2150.pdf Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2150VRTR-E1 MBR2150VRTR-E1 Diodes Incorporated MBR2150.pdf Description: DIODE SCHOTTKY 150V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B340LB-13-F-2477 B340LB-13-F-2477 Diodes Incorporated Description: DIODE
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN31D5UDA-7B DMN31D5UDA-7B Diodes Incorporated DMN31D5UDA.pdf Description: MOSFET 2N-CH 0.4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN31D5UDA-7B DMN31D5UDA-7B Diodes Incorporated DMN31D5UDA.pdf Description: MOSFET 2N-CH 0.4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
auf Bestellung 7036 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
68+0.26 EUR
138+0.13 EUR
500+0.11 EUR
1000+0.07 EUR
2000+0.06 EUR
5000+0.06 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1G32FS3-7 74AUP1G32FS3-7 Diodes Incorporated 74AUP1G32.pdf Description: IC GATE OR 1CH 2-INP DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.16 EUR
10000+0.15 EUR
25000+0.14 EUR
50000+0.13 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1G32FS3-7 74AUP1G32FS3-7 Diodes Incorporated 74AUP1G32.pdf Description: IC GATE OR 1CH 2-INP DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.60 EUR
37+0.49 EUR
40+0.44 EUR
100+0.33 EUR
250+0.30 EUR
500+0.25 EUR
1000+0.19 EUR
2500+0.17 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1G02FS3-7 74AUP1G02FS3-7 Diodes Incorporated 74AUP1G02.pdf Description: IC GATE NOR 1CH 2-INP DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.16 EUR
10000+0.15 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1G02FS3-7 74AUP1G02FS3-7 Diodes Incorporated 74AUP1G02.pdf Description: IC GATE NOR 1CH 2-INP DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.60 EUR
37+0.49 EUR
40+0.44 EUR
100+0.33 EUR
250+0.30 EUR
500+0.25 EUR
1000+0.19 EUR
2500+0.17 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1G06FS3-7 74AUP1G06FS3-7 Diodes Incorporated 74AUP1G06.pdf Description: IC INVERTER 1CH 1-INP DFN0808-4
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 515000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.18 EUR
10000+0.16 EUR
25000+0.15 EUR
35000+0.14 EUR
125000+0.13 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1G06FS3-7 74AUP1G06FS3-7 Diodes Incorporated 74AUP1G06.pdf Description: IC INVERTER 1CH 1-INP DFN0808-4
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 515000 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.97 EUR
31+0.57 EUR
38+0.47 EUR
100+0.35 EUR
250+0.30 EUR
500+0.26 EUR
1000+0.23 EUR
2500+0.20 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1G09FS3-7 74AUP1G09FS3-7 Diodes Incorporated 74AUP1G09.pdf Description: IC GATE AND 1CH 2-INP DFN0808-4
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 215000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.17 EUR
10000+0.16 EUR
15000+0.15 EUR
25000+0.14 EUR
50000+0.13 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1G09FS3-7 74AUP1G09FS3-7 Diodes Incorporated 74AUP1G09.pdf Description: IC GATE AND 1CH 2-INP DFN0808-4
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 219360 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.93 EUR
32+0.55 EUR
39+0.45 EUR
100+0.34 EUR
250+0.29 EUR
500+0.25 EUR
1000+0.22 EUR
2500+0.19 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
BC847BFAQ-7B Diodes Incorporated BC847BFAQ.pdf Description: TRANS NPN 45V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN0806-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 435 mW
Qualification: AEC-Q101
auf Bestellung 210000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.10 EUR
50000+0.08 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
BC847BFAQ-7B Diodes Incorporated BC847BFAQ.pdf Description: TRANS NPN 45V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN0806-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 435 mW
Qualification: AEC-Q101
auf Bestellung 210000 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.70 EUR
37+0.49 EUR
100+0.25 EUR
500+0.20 EUR
1000+0.15 EUR
2000+0.13 EUR
5000+0.12 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
DMC31D5UDA-7B DMC31D5UDA-7B Diodes Incorporated DMC31D5UDA.pdf Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
auf Bestellung 4070000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.13 EUR
30000+0.12 EUR
50000+0.11 EUR
100000+0.10 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMC31D5UDA-7B DMC31D5UDA-7B Diodes Incorporated DMC31D5UDA.pdf Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
auf Bestellung 4075830 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
38+0.47 EUR
100+0.24 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.15 EUR
5000+0.14 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
DMP22D5UFA-7B DMP22D5UFA-7B Diodes Incorporated DMP22D5UFA.pdf Description: MOSFET BVDSS: 8V~24V X2-DFN0806-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 16 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN2991UFA-7B DMN2991UFA-7B Diodes Incorporated DMN2991UFA.pdf Description: MOSFET BVDSS: 8V~24V X2-DFN0806-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14.6 pF @ 16 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP32D9UFA-7B DMP32D9UFA-7B Diodes Incorporated DMP32D9UFA.pdf Description: MOSFET BVDSS: 25V~30V X2-DFN0806
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN31D5UFA-7B DMN31D5UFA-7B Diodes Incorporated DMN31D5UFA.pdf Description: MOSFET BVDSS: 25V~30V X2-DFN0806
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP32D9UDAQ-7B DMP32D9UDAQ-7B Diodes Incorporated DMP32D9UDAQ.pdf Description: MOSFET 2P-CH 30V 0.22A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 360mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.8pF @ 15V
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 240000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.07 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMC31D5UDAQ-7B DMC31D5UDAQ-7B Diodes Incorporated DMC31D5UDAQ.pdf Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V, 21.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V, 0.35nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC1510 GBPC1510 Diodes Incorporated ds21208.pdf Description: BRIDGE RECT 1PHASE 1KV 15A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC3G07V8-7 Diodes Incorporated 74LVC3G07.pdf Description: IC INVERTER 3CH 3-INP 8VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 8-VSSOP
auf Bestellung 222000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.23 EUR
6000+0.21 EUR
15000+0.20 EUR
30000+0.18 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
74LVC3G07V8-7 Diodes Incorporated 74LVC3G07.pdf Description: IC INVERTER 3CH 3-INP 8VSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 8-VSSOP
auf Bestellung 222000 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
28+0.65 EUR
30+0.59 EUR
100+0.44 EUR
250+0.40 EUR
500+0.33 EUR
1000+0.25 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
DMS2220LFDB-7 DMS2220LFDB-7 Diodes Incorporated ds31546.pdf Description: MOSFET P-CH 20V 3.5A 6-DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
auf Bestellung 87000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.26 EUR
6000+0.24 EUR
9000+0.23 EUR
15000+0.22 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMS2220LFDB-7 DMS2220LFDB-7 Diodes Incorporated ds31546.pdf Description: MOSFET P-CH 20V 3.5A 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
auf Bestellung 89997 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.90 EUR
29+0.61 EUR
100+0.41 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
DMS2220LFDB-7 DMS2220LFDB-7 Diodes Incorporated ds31546.pdf Description: MOSFET P-CH 20V 3.5A 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
auf Bestellung 89297 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.90 EUR
30+0.60 EUR
100+0.41 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
49SNC200-18-E Diodes Incorporated Description: CRYSTAL METAL CAN SMD
Packaging: Bulk
Package / Case: HC-49/US
Load Capacitance: 18pF
Size / Dimension: 0.461" L x 0.189" W (11.70mm x 4.80mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±100ppm
Frequency Tolerance: ±50ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.205" (5.20mm)
ESR (Equivalent Series Resistance): 200 Ohms
Frequency: 20 MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DESD3V3ZS1BLP3-7 DESD3V3ZS1BLP3-7 Diodes Incorporated DESD3V3ZS1BLP3.pdf Description: TVS DIODE 3.3VWM 4.5V X3DFN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 4.5V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DESD3V3XA1BCSF-7 DESD3V3XA1BCSF-7 Diodes Incorporated DESD3V3XA1BCSF.pdf Description: DATALINE PROTECTION PP X2-DSN060
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 7V (Typ)
Power - Peak Pulse: 27.5W
Power Line Protection: No
auf Bestellung 200000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.10 EUR
50000+0.08 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DESD3V3X1BCSF-7 DESD3V3X1BCSF-7 Diodes Incorporated DESD3V3X1BCSF.pdf Description: DATALINE PROTECTION PP X2-DSN060
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 5.2V
Power - Peak Pulse: 21W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DESD3V3Z1BCSFQ-7 DESD3V3Z1BCSFQ-7 Diodes Incorporated DESD3V3Z1BCSFQ.pdf Description: GENERAL PROTECTION PP X2-DSN0603
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.17pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 4.5V (Typ)
Power - Peak Pulse: 25W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT54LPQ-7 BAT54LPQ-7 Diodes Incorporated BAT54LPQ.pdf Description: DIODE SCHOTTKY 30V 200MA 2DFN TR
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
auf Bestellung 211958 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
48+0.37 EUR
100+0.19 EUR
500+0.15 EUR
1000+0.11 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
BAT54LP-7-2477 BAT54LP-7-2477 Diodes Incorporated Description: DIODE
Packaging: Bulk
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT54LP-7B-2477 BAT54LP-7B-2477 Diodes Incorporated Description: DIODE
Packaging: Bulk
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5235BS-7-F MMBZ5235BS-7-F Diodes Incorporated ds31039.pdf Description: DIODE ZENER ARRAY 6.8V SOT363
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 Independent
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-363
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5235BS-7-F MMBZ5235BS-7-F Diodes Incorporated ds31039.pdf Description: DIODE ZENER ARRAY 6.8V SOT363
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 Independent
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-363
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
34+0.52 EUR
100+0.26 EUR
500+0.21 EUR
1000+0.16 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5235BW-7-F MMBZ5235BW-7-F Diodes Incorporated ds31037.pdf Description: DIODE ZENER 6.8V 200MW SOT323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
auf Bestellung 129000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.10 EUR
6000+0.10 EUR
9000+0.08 EUR
30000+0.08 EUR
75000+0.07 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5235BW-7-F MMBZ5235BW-7-F Diodes Incorporated ds31037.pdf Description: DIODE ZENER 6.8V 200MW SOT323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
auf Bestellung 129000 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
46+0.39 EUR
100+0.20 EUR
500+0.16 EUR
1000+0.12 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
DMN6075SQ-7 DMN6075SQ-7 Diodes Incorporated DMN6075SQ.pdf Description: MOSFET BVDSS: 41V~60V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2954 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.86 EUR
33+0.54 EUR
100+0.27 EUR
500+0.25 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
DMN6075SQ-13 DMN6075SQ-13 Diodes Incorporated DMN6075SQ.pdf Description: MOSFET BVDSS: 41V~60V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 9642 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.93 EUR
32+0.57 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.22 EUR
5000+0.19 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
DGD2136MS28-13 DGD2136MS28-13 Diodes Incorporated DGD2136M.pdf Description: IC GATE DRVR HALF-BRIDGE 28SO
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SO
Rise / Fall Time (Typ): 90ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.73 EUR
3000+1.70 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
DGD2136MS28-13 DGD2136MS28-13 Diodes Incorporated DGD2136M.pdf Description: IC GATE DRVR HALF-BRIDGE 28SO
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SO
Rise / Fall Time (Typ): 90ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 25095 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.56 EUR
10+3.55 EUR
25+3.03 EUR
100+2.43 EUR
250+2.14 EUR
500+1.96 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
UF5JD1-13 UF5JD1-13 Diodes Incorporated UF5JD1.pdf Description: DIODE STANDARD 600V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 10V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
UF5JD1-13 UF5JD1-13 Diodes Incorporated UF5JD1.pdf Description: DIODE STANDARD 600V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 10V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.43 EUR
16+1.15 EUR
100+0.93 EUR
500+0.72 EUR
1000+0.65 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5250B-13-F MMSZ5250B-13-F Diodes Incorporated Description: DIODE ZENER 20V 370MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
auf Bestellung 1100000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.06 EUR
20000+0.05 EUR
30000+0.05 EUR
50000+0.04 EUR
70000+0.04 EUR
100000+0.04 EUR
250000+0.04 EUR
500000+0.03 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
PI5USB2546HZHDEX PI5USB2546HZHDEX Diodes Incorporated PI5USB2546H-Product-Brief.pdf Description: IC PWR SWITCH N-CHAN 1:1 16UQFN
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 73mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-UQFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PI5USB2546HZHDEX PI5USB2546HZHDEX Diodes Incorporated PI5USB2546H-Product-Brief.pdf Description: IC PWR SWITCH N-CHAN 1:1 16UQFN
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 73mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-UQFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
auf Bestellung 3460 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.01 EUR
10+1.92 EUR
25+1.63 EUR
100+1.30 EUR
250+1.14 EUR
500+1.04 EUR
1000+0.96 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
DMG5802LFX-7 DMG5802LFX-7 Diodes Incorporated DMG5802LFX.pdf Description: MOSFET 2N-CH 24V 6.5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 980mW
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 1066.4pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 31.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: W-DFN5020-6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AP9101CAK6-BDTRG1 AP9101C.pdf
AP9101CAK6-BDTRG1
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC2G32RA3-7 74LVC2G32.pdf
74LVC2G32RA3-7
Hersteller: Diodes Incorporated
Description: IC GATE OR 2CH 2-INP DFN1210-8
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1210-8
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 40 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC2G32RA3-7 74LVC2G32.pdf
74LVC2G32RA3-7
Hersteller: Diodes Incorporated
Description: IC GATE OR 2CH 2-INP DFN1210-8
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1210-8
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 40 µA
auf Bestellung 3484 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
45+0.39 EUR
55+0.32 EUR
100+0.24 EUR
250+0.20 EUR
500+0.18 EUR
1000+0.15 EUR
2500+0.13 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
AH277AZ4-BG1 AH277A.pdf
AH277AZ4-BG1
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH TO94
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 4-SSIP
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3.5V ~ 16V
Technology: Hall Effect
Sensing Range: 7mT Trip, -7mT Release
Current - Output (Max): 400mA
Current - Supply (Max): 16mA
Supplier Device Package: TO-94
Test Condition: 25°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AH277AZ4-AG1 AH277A.pdf
AH277AZ4-AG1
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH TO94
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 4-SSIP
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3.5V ~ 16V
Technology: Hall Effect
Sensing Range: 5mT Trip, -5mT Release
Current - Output (Max): 400mA
Current - Supply (Max): 16mA
Supplier Device Package: TO-94
Test Condition: 25°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN32D0LV-7 DMN32D0LV.pdf
DMN32D0LV-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.68A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.07 EUR
6000+0.07 EUR
9000+0.06 EUR
15000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMN32D0LV-7 DMN32D0LV.pdf
DMN32D0LV-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.68A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 15946 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
94+0.19 EUR
140+0.13 EUR
500+0.10 EUR
1000+0.09 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
MBR2150VG-E1 MBR2150.pdf
MBR2150VG-E1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2150VG-G1 MBR2150.pdf
MBR2150VG-G1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2150VGTR-G1 MBR2150.pdf
MBR2150VGTR-G1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2150VRTR-E1 MBR2150.pdf
MBR2150VRTR-E1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 150V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B340LB-13-F-2477
B340LB-13-F-2477
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN31D5UDA-7B DMN31D5UDA.pdf
DMN31D5UDA-7B
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 0.4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN31D5UDA-7B DMN31D5UDA.pdf
DMN31D5UDA-7B
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 0.4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
auf Bestellung 7036 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
68+0.26 EUR
138+0.13 EUR
500+0.11 EUR
1000+0.07 EUR
2000+0.06 EUR
5000+0.06 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1G32FS3-7 74AUP1G32.pdf
74AUP1G32FS3-7
Hersteller: Diodes Incorporated
Description: IC GATE OR 1CH 2-INP DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.16 EUR
10000+0.15 EUR
25000+0.14 EUR
50000+0.13 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1G32FS3-7 74AUP1G32.pdf
74AUP1G32FS3-7
Hersteller: Diodes Incorporated
Description: IC GATE OR 1CH 2-INP DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
37+0.49 EUR
40+0.44 EUR
100+0.33 EUR
250+0.30 EUR
500+0.25 EUR
1000+0.19 EUR
2500+0.17 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1G02FS3-7 74AUP1G02.pdf
74AUP1G02FS3-7
Hersteller: Diodes Incorporated
Description: IC GATE NOR 1CH 2-INP DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.16 EUR
10000+0.15 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1G02FS3-7 74AUP1G02.pdf
74AUP1G02FS3-7
Hersteller: Diodes Incorporated
Description: IC GATE NOR 1CH 2-INP DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
37+0.49 EUR
40+0.44 EUR
100+0.33 EUR
250+0.30 EUR
500+0.25 EUR
1000+0.19 EUR
2500+0.17 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1G06FS3-7 74AUP1G06.pdf
74AUP1G06FS3-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 1CH 1-INP DFN0808-4
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 515000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.18 EUR
10000+0.16 EUR
25000+0.15 EUR
35000+0.14 EUR
125000+0.13 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1G06FS3-7 74AUP1G06.pdf
74AUP1G06FS3-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 1CH 1-INP DFN0808-4
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 515000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
31+0.57 EUR
38+0.47 EUR
100+0.35 EUR
250+0.30 EUR
500+0.26 EUR
1000+0.23 EUR
2500+0.20 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1G09FS3-7 74AUP1G09.pdf
74AUP1G09FS3-7
Hersteller: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP DFN0808-4
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 215000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.17 EUR
10000+0.16 EUR
15000+0.15 EUR
25000+0.14 EUR
50000+0.13 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1G09FS3-7 74AUP1G09.pdf
74AUP1G09FS3-7
Hersteller: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP DFN0808-4
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 219360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
32+0.55 EUR
39+0.45 EUR
100+0.34 EUR
250+0.29 EUR
500+0.25 EUR
1000+0.22 EUR
2500+0.19 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
BC847BFAQ-7B BC847BFAQ.pdf
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN0806-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 435 mW
Qualification: AEC-Q101
auf Bestellung 210000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.10 EUR
50000+0.08 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
BC847BFAQ-7B BC847BFAQ.pdf
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN0806-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 435 mW
Qualification: AEC-Q101
auf Bestellung 210000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.70 EUR
37+0.49 EUR
100+0.25 EUR
500+0.20 EUR
1000+0.15 EUR
2000+0.13 EUR
5000+0.12 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
DMC31D5UDA-7B DMC31D5UDA.pdf
DMC31D5UDA-7B
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
auf Bestellung 4070000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.13 EUR
30000+0.12 EUR
50000+0.11 EUR
100000+0.10 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMC31D5UDA-7B DMC31D5UDA.pdf
DMC31D5UDA-7B
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
auf Bestellung 4075830 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
38+0.47 EUR
100+0.24 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.15 EUR
5000+0.14 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
DMP22D5UFA-7B DMP22D5UFA.pdf
DMP22D5UFA-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN0806-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 16 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN2991UFA-7B DMN2991UFA.pdf
DMN2991UFA-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN0806-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14.6 pF @ 16 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP32D9UFA-7B DMP32D9UFA.pdf
DMP32D9UFA-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0806
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN31D5UFA-7B DMN31D5UFA.pdf
DMN31D5UFA-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0806
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP32D9UDAQ-7B DMP32D9UDAQ.pdf
DMP32D9UDAQ-7B
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 0.22A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 360mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.8pF @ 15V
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 240000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.07 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMC31D5UDAQ-7B DMC31D5UDAQ.pdf
DMC31D5UDAQ-7B
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V, 21.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V, 0.35nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC1510 ds21208.pdf
GBPC1510
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 15A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC3G07V8-7 74LVC3G07.pdf
Hersteller: Diodes Incorporated
Description: IC INVERTER 3CH 3-INP 8VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 8-VSSOP
auf Bestellung 222000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.23 EUR
6000+0.21 EUR
15000+0.20 EUR
30000+0.18 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
74LVC3G07V8-7 74LVC3G07.pdf
Hersteller: Diodes Incorporated
Description: IC INVERTER 3CH 3-INP 8VSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 8-VSSOP
auf Bestellung 222000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
28+0.65 EUR
30+0.59 EUR
100+0.44 EUR
250+0.40 EUR
500+0.33 EUR
1000+0.25 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
DMS2220LFDB-7 ds31546.pdf
DMS2220LFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.5A 6-DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
auf Bestellung 87000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
6000+0.24 EUR
9000+0.23 EUR
15000+0.22 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMS2220LFDB-7 ds31546.pdf
DMS2220LFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.5A 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
auf Bestellung 89997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.90 EUR
29+0.61 EUR
100+0.41 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
DMS2220LFDB-7 ds31546.pdf
DMS2220LFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.5A 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
auf Bestellung 89297 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.90 EUR
30+0.60 EUR
100+0.41 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
49SNC200-18-E
Hersteller: Diodes Incorporated
Description: CRYSTAL METAL CAN SMD
Packaging: Bulk
Package / Case: HC-49/US
Load Capacitance: 18pF
Size / Dimension: 0.461" L x 0.189" W (11.70mm x 4.80mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±100ppm
Frequency Tolerance: ±50ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.205" (5.20mm)
ESR (Equivalent Series Resistance): 200 Ohms
Frequency: 20 MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DESD3V3ZS1BLP3-7 DESD3V3ZS1BLP3.pdf
DESD3V3ZS1BLP3-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 4.5V X3DFN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 4.5V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DESD3V3XA1BCSF-7 DESD3V3XA1BCSF.pdf
DESD3V3XA1BCSF-7
Hersteller: Diodes Incorporated
Description: DATALINE PROTECTION PP X2-DSN060
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 7V (Typ)
Power - Peak Pulse: 27.5W
Power Line Protection: No
auf Bestellung 200000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.10 EUR
50000+0.08 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DESD3V3X1BCSF-7 DESD3V3X1BCSF.pdf
DESD3V3X1BCSF-7
Hersteller: Diodes Incorporated
Description: DATALINE PROTECTION PP X2-DSN060
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 5.2V
Power - Peak Pulse: 21W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DESD3V3Z1BCSFQ-7 DESD3V3Z1BCSFQ.pdf
DESD3V3Z1BCSFQ-7
Hersteller: Diodes Incorporated
Description: GENERAL PROTECTION PP X2-DSN0603
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.17pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 4.5V (Typ)
Power - Peak Pulse: 25W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT54LPQ-7 BAT54LPQ.pdf
BAT54LPQ-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 200MA 2DFN TR
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
auf Bestellung 211958 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
48+0.37 EUR
100+0.19 EUR
500+0.15 EUR
1000+0.11 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
BAT54LP-7-2477
BAT54LP-7-2477
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT54LP-7B-2477
BAT54LP-7B-2477
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5235BS-7-F ds31039.pdf
MMBZ5235BS-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER ARRAY 6.8V SOT363
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 Independent
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-363
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5235BS-7-F ds31039.pdf
MMBZ5235BS-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER ARRAY 6.8V SOT363
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 Independent
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-363
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
34+0.52 EUR
100+0.26 EUR
500+0.21 EUR
1000+0.16 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5235BW-7-F ds31037.pdf
MMBZ5235BW-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.8V 200MW SOT323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
auf Bestellung 129000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.10 EUR
6000+0.10 EUR
9000+0.08 EUR
30000+0.08 EUR
75000+0.07 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5235BW-7-F ds31037.pdf
MMBZ5235BW-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.8V 200MW SOT323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
auf Bestellung 129000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
46+0.39 EUR
100+0.20 EUR
500+0.16 EUR
1000+0.12 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
DMN6075SQ-7 DMN6075SQ.pdf
DMN6075SQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2954 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
33+0.54 EUR
100+0.27 EUR
500+0.25 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
DMN6075SQ-13 DMN6075SQ.pdf
DMN6075SQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 9642 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
32+0.57 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.22 EUR
5000+0.19 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
DGD2136MS28-13 DGD2136M.pdf
DGD2136MS28-13
Hersteller: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 28SO
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SO
Rise / Fall Time (Typ): 90ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.73 EUR
3000+1.70 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
DGD2136MS28-13 DGD2136M.pdf
DGD2136MS28-13
Hersteller: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 28SO
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SO
Rise / Fall Time (Typ): 90ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 25095 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.56 EUR
10+3.55 EUR
25+3.03 EUR
100+2.43 EUR
250+2.14 EUR
500+1.96 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
UF5JD1-13 UF5JD1.pdf
UF5JD1-13
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 600V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 10V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
UF5JD1-13 UF5JD1.pdf
UF5JD1-13
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 600V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 10V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
16+1.15 EUR
100+0.93 EUR
500+0.72 EUR
1000+0.65 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5250B-13-F
MMSZ5250B-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 20V 370MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
auf Bestellung 1100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.06 EUR
20000+0.05 EUR
30000+0.05 EUR
50000+0.04 EUR
70000+0.04 EUR
100000+0.04 EUR
250000+0.04 EUR
500000+0.03 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
PI5USB2546HZHDEX PI5USB2546H-Product-Brief.pdf
PI5USB2546HZHDEX
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 16UQFN
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 73mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-UQFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PI5USB2546HZHDEX PI5USB2546H-Product-Brief.pdf
PI5USB2546HZHDEX
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 16UQFN
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 73mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-UQFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
auf Bestellung 3460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.01 EUR
10+1.92 EUR
25+1.63 EUR
100+1.30 EUR
250+1.14 EUR
500+1.04 EUR
1000+0.96 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
DMG5802LFX-7 DMG5802LFX.pdf
DMG5802LFX-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 24V 6.5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 980mW
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 1066.4pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 31.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: W-DFN5020-6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 131 262 393 524 630 631 632 633 634 635 636 637 638 639 640 655 786 917 1048 1179 1310  [ Nächste Seite >> ]