| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EPC2367A | EPC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2619 | EPC |
GaN FETs EPC eGaN FET,100 V, 3.3 milliohm typ at 5 V, LGA 2.5 x 1.5 |
auf Bestellung 1399 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2619 | EPC |
Description: TRANS GAN 100V .0042 OHM 6LGAPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2619 | EPC |
Description: TRANS GAN 100V .0042 OHM 6LGAPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V |
auf Bestellung 6231 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2619ENGRT | EPC |
Description: TRANS GAN 80V .0033OHM 6LGAPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC2619ENGRT | EPC |
Description: TRANS GAN 80V .0033OHM 6LGAPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC2801 | EPC |
Description: TRANS GAN 100V 25A BUMPED DIE |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC2801 | EPC |
Description: TRANS GAN 100V 25A BUMPED DIE |
auf Bestellung 354 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC2801 | EPC |
Description: TRANS GAN 100V 25A BUMPED DIE |
auf Bestellung 354 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC2815 | EPC |
Description: TRANS GAN 40V 33A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC2815 | EPC |
Description: TRANS GAN 40V 33A BUMPED DIE |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC2815 | EPC |
Description: TRANS GAN 40V 33A BUMPED DIE |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC2818 | EPC |
Description: TRANS GAN 150V 12A BUMPED DIE |
auf Bestellung 705 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC2818 | EPC |
Description: TRANS GAN 150V 12A BUMPED DIE |
auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC2818 | EPC |
Description: TRANS GAN 150V 12A BUMPED DIE |
auf Bestellung 705 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC8002 | EPC |
GaN FETs EPC eGaN FET,65 V, 480 milliohm at 5 V, LGA 2.05 x 0.85 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC8002 | EPC |
Description: GANFET N-CH 65V 2A DIEPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 530mOhm @ 500mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 65 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 32.5 V |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC8002 | EPC |
Description: GANFET N-CH 65V 2A DIEPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 530mOhm @ 500mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 65 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 32.5 V |
auf Bestellung 40111 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC8002ENGR | EPC |
Description: TRANS GAN 65V 2A BUMPED DIE |
auf Bestellung 530 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC8002TENGR | EPC |
Description: TRANS GAN 65V 2A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC8003ENGR | EPC |
Description: TRANS GAN 100V 2.5A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC8003TENGR | EPC |
Description: TRANS GAN 100V 2.5A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC8004 | EPC |
Description: GANFET N-CH 40V 4A DIEPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 20 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20 |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC8004 | EPC |
Description: GANFET N-CH 40V 4A DIEPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 20 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20 |
auf Bestellung 9156 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC8004ENGR | EPC |
Description: TRANS GAN 40V 4.4A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC8004TENGR | EPC |
Description: TRANS GAN 40V 4.4A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC8005ENGR | EPC |
Description: TRANS GAN 65V 2.9A BUMPED DIE |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC8005TENGR | EPC |
Description: TRANS GAN 65V 2.9A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC8007ENGR | EPC |
Description: TRANS GAN 40V 3.8A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC8007TENGR | EPC |
Description: TRANS GAN 40V 3.8A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC8008ENGR | EPC |
Description: TRANS GAN 40V 2.7A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC8008TENGR | EPC |
Description: TRANS GAN 40V 2.7A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC8009 | EPC |
Description: GANFET N-CH 65V 4A DIEPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 32.5 V |
auf Bestellung 8443 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC8009 | EPC |
Description: GANFET N-CH 65V 4A DIEPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 32.5 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC8009ENGR | EPC |
Description: TRANS GAN 65V 4.1A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC8009TENGR | EPC |
Description: TRANS GAN 65V 4.1A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC8010 | EPC |
Description: GANFET N-CH 100V 4A DIEPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.48 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
auf Bestellung 19127 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC8010 | EPC |
Description: GANFET N-CH 100V 4A DIEPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.48 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
auf Bestellung 17500 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC8010 | EPC |
GaN FETs EPC eGaN FET,100 V, 160 milliohm at 5 V, LGA 2.05 x 0.85 |
auf Bestellung 3800 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC8010ENGR | EPC |
Description: TRANS GAN 100V 2.7A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC8010TENGR | EPC |
Description: TRANS GAN 100V 3.4A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC9001 | EPC |
Description: EVAL BOARD FOR EPC2015Packaging: Bulk Function: Half H-Bridge Driver (External FET) Type: Power Management Contents: Board(s) Utilized IC / Part: EPC2015 Primary Attributes: 40V, 15A Max Output GaNFET Capability Secondary Attributes: GaNFET Driver Circuit Uses 7V ~ 12V Embedded: No |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC9001C | EPC |
Description: BOARD DEV EPC2015C 40V EGANContents: Board(s) Part Status: Active Embedded: No Supplied Contents: Board(s) Utilized IC / Part: EPC2015C Type: Power Management Function: Half H-Bridge Driver (External FET) Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC9002 | EPC |
Description: EVAL BOARD FOR EPC2001Packaging: Bulk Function: Half H-Bridge Driver (External FET) Type: Power Management Contents: Board(s) Utilized IC / Part: EPC2001 Supplied Contents: Board(s) Primary Attributes: 100V, 10A Max Output GaNFET Capability Secondary Attributes: GaNFET Driver Circuit Uses 7V ~ 12V Embedded: No |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC9002C | EPC |
Description: EVAL BOARD FOR EPC2001CPackaging: Bulk Function: * Type: Power Management Contents: Board(s) Utilized IC / Part: EPC2001C Supplied Contents: Board(s) Part Status: Active |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC9003 | EPC |
Description: EVAL BOARD FOR EPC2010Packaging: Bulk Function: Half H-Bridge Driver (External FET) Type: Power Management Contents: Board(s) Utilized IC / Part: EPC2010 Primary Attributes: 200V, 5A Max Output GaNFET Capability Secondary Attributes: GaNFET Driver Circuit Uses 7V ~ 12V Embedded: No |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC9003C | EPC |
Description: EVAL BOARD FOR EPC2010CPackaging: Bulk Function: Half H-Bridge Driver (External FET) Type: Power Management Contents: Board(s) Utilized IC / Part: EPC2010C Supplied Contents: Board(s) Embedded: No Part Status: Active |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC9004 | EPC |
Description: BOARD DEV FOR EPC2012 200V EGANPackaging: Bulk Function: Half H-Bridge Driver (External FET) Type: Power Management Contents: Board(s) Utilized IC / Part: EPC2012 Primary Attributes: 200V, 3A Max Output GaNFET Capability Secondary Attributes: GaNFET Driver Circuit Uses 7V ~ 12V Embedded: No |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC9004C | EPC |
Description: EVAL BOARD FOR EPC2012CPackaging: Bulk Function: Half H-Bridge Driver (External FET) Type: Power Management Contents: Board(s) Utilized IC / Part: EPC2012C Supplied Contents: Board(s) Embedded: No Part Status: Active |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC9005 | EPC |
Description: BOARD DEV FOR EPC2014 40V EGANEmbedded: No Secondary Attributes: GaNFET Driver Circuit Uses 7V ~ 12V Primary Attributes: 40V, 5A Max Output GaNFET Capability Utilized IC / Part: EPC2014 Contents: Board(s) Type: Power Management Function: Half H-Bridge Driver (External FET) Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC9005C | EPC |
Description: EVAL BOARD FOR EPC2014CContents: Board(s) Part Status: Active Embedded: No Supplied Contents: Board(s) Utilized IC / Part: EPC2014C Type: Power Management Function: Half H-Bridge Driver (External FET) Packaging: Bulk |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC9006 | EPC |
Description: BOARD DEV FOR EPC2007 100V EGANSecondary Attributes: GaNFET Driver Circuit Uses 7V ~ 12V Contents: Board(s) Part Status: Obsolete Embedded: No Primary Attributes: 100V, 5A Max Output GaNFET Capability Supplied Contents: Board(s) Utilized IC / Part: EPC2007 Type: Power Management Function: Half H-Bridge Driver (External FET) Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC9006C | EPC |
Description: BOARD DEV FOR EPC2007C 100VPackaging: Bulk Function: Half H-Bridge Driver (External FET) Type: Power Management Contents: Board(s) Utilized IC / Part: EPC2007C Supplied Contents: Board(s) Primary Attributes: 100V, 7A Max Output GaNFET Capability Secondary Attributes: GaNFET Driver Circuit Uses 7V ~ 12V Embedded: No Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC9010 | EPC |
Description: EVAL BOARD FOR EPC2016Contents: Board(s) Embedded: No Primary Attributes: 100V, 7A Max Output GaNFET Capability Supplied Contents: Board(s) Utilized IC / Part: EPC2016 Type: Power Management Function: Half H-Bridge Driver (External FET) Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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EPC9010C | EPC |
Description: DEV BOARD EPC2016C 100V EGANSupplied Contents: Board(s) Utilized IC / Part: EPC2016C Type: Power Management Function: Half H-Bridge Driver (External FET) Packaging: Bulk |
auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC90120 | EPC |
Description: EVAL BOARD FOR EPC2152Packaging: Box Type: Power Management Utilized IC / Part: EPC2152 Supplied Contents: Board(s) Contents: Board(s) |
auf Bestellung 47 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC90121 | EPC |
Description: EVAL BOARD FOR EPC2050Primary Attributes: 280V, 4A Max Output GaNFET Capability Supplied Contents: Board(s) Utilized IC / Part: EPC2050 Type: Power Management Function: Half H-Bridge Driver (External FET) Packaging: Box Contents: Board(s) Secondary Attributes: GaNFET Driver Circuit Uses 10V ~ 12V |
auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC90122 | EPC |
Description: EVAL BOARD FOR EPC90122Contents: Board(s) Supplied Contents: Board(s) Utilized IC / Part: EPC90122 Type: Power Management Function: Half H-Bridge Driver (External FET) Packaging: Box |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC90123 | EPC |
Description: EVAL BOARD FOR EPC2218Packaging: Box Type: Power Management Contents: Board(s) Utilized IC / Part: EPC2218 Supplied Contents: Board(s) Part Status: Active |
auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC90124 | EPC |
Description: EVAL BOARD FOR EPC2207Packaging: Box Function: Half H-Bridge Driver (External FET) Type: Power Management Contents: Board(s) Utilized IC / Part: EPC2207 Supplied Contents: Board(s) Primary Attributes: 200V, 8A Max Output GaNFET Capability |
auf Bestellung 35 Stücke: Lieferzeit 10-14 Tag (e) |
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| EPC2619 |
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Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 3.3 milliohm typ at 5 V, LGA 2.5 x 1.5
GaN FETs EPC eGaN FET,100 V, 3.3 milliohm typ at 5 V, LGA 2.5 x 1.5
auf Bestellung 1399 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.25 EUR |
| 10+ | 5.45 EUR |
| 100+ | 3.88 EUR |
| 500+ | 3.58 EUR |
| 1000+ | 3.42 EUR |
| 2500+ | 3.06 EUR |
| EPC2619 |
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Hersteller: EPC
Description: TRANS GAN 100V .0042 OHM 6LGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
Description: TRANS GAN 100V .0042 OHM 6LGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.92 EUR |
| EPC2619 |
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Hersteller: EPC
Description: TRANS GAN 100V .0042 OHM 6LGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
Description: TRANS GAN 100V .0042 OHM 6LGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
auf Bestellung 6231 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.79 EUR |
| 10+ | 5.81 EUR |
| 100+ | 4.12 EUR |
| 500+ | 3.57 EUR |
| EPC2619ENGRT |
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Hersteller: EPC
Description: TRANS GAN 80V .0033OHM 6LGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
Description: TRANS GAN 80V .0033OHM 6LGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2619ENGRT |
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Hersteller: EPC
Description: TRANS GAN 80V .0033OHM 6LGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
Description: TRANS GAN 80V .0033OHM 6LGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC2801 |
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Hersteller: EPC
Description: TRANS GAN 100V 25A BUMPED DIE
Description: TRANS GAN 100V 25A BUMPED DIE
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2801 |
![]() |
Hersteller: EPC
Description: TRANS GAN 100V 25A BUMPED DIE
Description: TRANS GAN 100V 25A BUMPED DIE
auf Bestellung 354 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2801 |
![]() |
Hersteller: EPC
Description: TRANS GAN 100V 25A BUMPED DIE
Description: TRANS GAN 100V 25A BUMPED DIE
auf Bestellung 354 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2815 |
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Hersteller: EPC
Description: TRANS GAN 40V 33A BUMPED DIE
Description: TRANS GAN 40V 33A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC2815 |
![]() |
Hersteller: EPC
Description: TRANS GAN 40V 33A BUMPED DIE
Description: TRANS GAN 40V 33A BUMPED DIE
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2815 |
![]() |
Hersteller: EPC
Description: TRANS GAN 40V 33A BUMPED DIE
Description: TRANS GAN 40V 33A BUMPED DIE
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2818 |
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Hersteller: EPC
Description: TRANS GAN 150V 12A BUMPED DIE
Description: TRANS GAN 150V 12A BUMPED DIE
auf Bestellung 705 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2818 |
![]() |
Hersteller: EPC
Description: TRANS GAN 150V 12A BUMPED DIE
Description: TRANS GAN 150V 12A BUMPED DIE
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2818 |
![]() |
Hersteller: EPC
Description: TRANS GAN 150V 12A BUMPED DIE
Description: TRANS GAN 150V 12A BUMPED DIE
auf Bestellung 705 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC8002 |
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Hersteller: EPC
GaN FETs EPC eGaN FET,65 V, 480 milliohm at 5 V, LGA 2.05 x 0.85
GaN FETs EPC eGaN FET,65 V, 480 milliohm at 5 V, LGA 2.05 x 0.85
Produkt ist nicht verfügbar
Mindestbestellmenge: 12500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8002 |
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Hersteller: EPC
Description: GANFET N-CH 65V 2A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 530mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 32.5 V
Description: GANFET N-CH 65V 2A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 530mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 32.5 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.75 EUR |
| 5000+ | 2.74 EUR |
| EPC8002 |
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Hersteller: EPC
Description: GANFET N-CH 65V 2A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 530mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 32.5 V
Description: GANFET N-CH 65V 2A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 530mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 32.5 V
auf Bestellung 40111 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.35 EUR |
| 10+ | 5.52 EUR |
| 100+ | 3.9 EUR |
| 500+ | 3.34 EUR |
| EPC8002ENGR |
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Hersteller: EPC
Description: TRANS GAN 65V 2A BUMPED DIE
Description: TRANS GAN 65V 2A BUMPED DIE
auf Bestellung 530 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC8002TENGR |
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Hersteller: EPC
Description: TRANS GAN 65V 2A BUMPED DIE
Description: TRANS GAN 65V 2A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8003ENGR |
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Hersteller: EPC
Description: TRANS GAN 100V 2.5A BUMPED DIE
Description: TRANS GAN 100V 2.5A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8003TENGR |
![]() |
Hersteller: EPC
Description: TRANS GAN 100V 2.5A BUMPED DIE
Description: TRANS GAN 100V 2.5A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8004 |
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Hersteller: EPC
Description: GANFET N-CH 40V 4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
Description: GANFET N-CH 40V 4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.67 EUR |
| 5000+ | 2.65 EUR |
| EPC8004 |
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Hersteller: EPC
Description: GANFET N-CH 40V 4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
Description: GANFET N-CH 40V 4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
auf Bestellung 9156 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.16 EUR |
| 10+ | 5.38 EUR |
| 100+ | 3.8 EUR |
| 500+ | 3.24 EUR |
| EPC8004ENGR |
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Hersteller: EPC
Description: TRANS GAN 40V 4.4A BUMPED DIE
Description: TRANS GAN 40V 4.4A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8004TENGR |
![]() |
Hersteller: EPC
Description: TRANS GAN 40V 4.4A BUMPED DIE
Description: TRANS GAN 40V 4.4A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8005ENGR |
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Hersteller: EPC
Description: TRANS GAN 65V 2.9A BUMPED DIE
Description: TRANS GAN 65V 2.9A BUMPED DIE
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC8005TENGR |
![]() |
Hersteller: EPC
Description: TRANS GAN 65V 2.9A BUMPED DIE
Description: TRANS GAN 65V 2.9A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8007ENGR |
![]() |
Hersteller: EPC
Description: TRANS GAN 40V 3.8A BUMPED DIE
Description: TRANS GAN 40V 3.8A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8007TENGR |
![]() |
Hersteller: EPC
Description: TRANS GAN 40V 3.8A BUMPED DIE
Description: TRANS GAN 40V 3.8A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8008ENGR |
![]() |
Hersteller: EPC
Description: TRANS GAN 40V 2.7A BUMPED DIE
Description: TRANS GAN 40V 2.7A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8008TENGR |
![]() |
Hersteller: EPC
Description: TRANS GAN 40V 2.7A BUMPED DIE
Description: TRANS GAN 40V 2.7A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8009 |
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Hersteller: EPC
Description: GANFET N-CH 65V 4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 32.5 V
Description: GANFET N-CH 65V 4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 32.5 V
auf Bestellung 8443 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.77 EUR |
| 10+ | 5.8 EUR |
| 100+ | 4.11 EUR |
| 500+ | 3.57 EUR |
| EPC8009 |
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Hersteller: EPC
Description: GANFET N-CH 65V 4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 32.5 V
Description: GANFET N-CH 65V 4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 32.5 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.92 EUR |
| EPC8009ENGR |
![]() |
Hersteller: EPC
Description: TRANS GAN 65V 4.1A BUMPED DIE
Description: TRANS GAN 65V 4.1A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8009TENGR |
![]() |
Hersteller: EPC
Description: TRANS GAN 65V 4.1A BUMPED DIE
Description: TRANS GAN 65V 4.1A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8010 |
![]() |
Hersteller: EPC
Description: GANFET N-CH 100V 4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Description: GANFET N-CH 100V 4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 19127 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.87 EUR |
| 10+ | 3.81 EUR |
| 100+ | 2.64 EUR |
| 500+ | 2.13 EUR |
| 1000+ | 2.07 EUR |
| EPC8010 |
![]() |
Hersteller: EPC
Description: GANFET N-CH 100V 4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Description: GANFET N-CH 100V 4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.8 EUR |
| 5000+ | 1.69 EUR |
| EPC8010 |
![]() |
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 160 milliohm at 5 V, LGA 2.05 x 0.85
GaN FETs EPC eGaN FET,100 V, 160 milliohm at 5 V, LGA 2.05 x 0.85
auf Bestellung 3800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.55 EUR |
| 10+ | 3.61 EUR |
| 100+ | 2.51 EUR |
| 500+ | 2.12 EUR |
| 1000+ | 2.01 EUR |
| 2500+ | 1.78 EUR |
| EPC8010ENGR |
![]() |
Hersteller: EPC
Description: TRANS GAN 100V 2.7A BUMPED DIE
Description: TRANS GAN 100V 2.7A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8010TENGR |
![]() |
Hersteller: EPC
Description: TRANS GAN 100V 3.4A BUMPED DIE
Description: TRANS GAN 100V 3.4A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC9001 |
![]() |
Hersteller: EPC
Description: EVAL BOARD FOR EPC2015
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: EPC2015
Primary Attributes: 40V, 15A Max Output GaNFET Capability
Secondary Attributes: GaNFET Driver Circuit Uses 7V ~ 12V
Embedded: No
Description: EVAL BOARD FOR EPC2015
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: EPC2015
Primary Attributes: 40V, 15A Max Output GaNFET Capability
Secondary Attributes: GaNFET Driver Circuit Uses 7V ~ 12V
Embedded: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC9001C |
![]() |
Hersteller: EPC
Description: BOARD DEV EPC2015C 40V EGAN
Contents: Board(s)
Part Status: Active
Embedded: No
Supplied Contents: Board(s)
Utilized IC / Part: EPC2015C
Type: Power Management
Function: Half H-Bridge Driver (External FET)
Packaging: Bulk
Description: BOARD DEV EPC2015C 40V EGAN
Contents: Board(s)
Part Status: Active
Embedded: No
Supplied Contents: Board(s)
Utilized IC / Part: EPC2015C
Type: Power Management
Function: Half H-Bridge Driver (External FET)
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC9002 |
![]() |
Hersteller: EPC
Description: EVAL BOARD FOR EPC2001
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: EPC2001
Supplied Contents: Board(s)
Primary Attributes: 100V, 10A Max Output GaNFET Capability
Secondary Attributes: GaNFET Driver Circuit Uses 7V ~ 12V
Embedded: No
Description: EVAL BOARD FOR EPC2001
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: EPC2001
Supplied Contents: Board(s)
Primary Attributes: 100V, 10A Max Output GaNFET Capability
Secondary Attributes: GaNFET Driver Circuit Uses 7V ~ 12V
Embedded: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC9002C |
![]() |
Hersteller: EPC
Description: EVAL BOARD FOR EPC2001C
Packaging: Bulk
Function: *
Type: Power Management
Contents: Board(s)
Utilized IC / Part: EPC2001C
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL BOARD FOR EPC2001C
Packaging: Bulk
Function: *
Type: Power Management
Contents: Board(s)
Utilized IC / Part: EPC2001C
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 394.21 EUR |
| EPC9003 |
![]() |
Hersteller: EPC
Description: EVAL BOARD FOR EPC2010
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: EPC2010
Primary Attributes: 200V, 5A Max Output GaNFET Capability
Secondary Attributes: GaNFET Driver Circuit Uses 7V ~ 12V
Embedded: No
Description: EVAL BOARD FOR EPC2010
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: EPC2010
Primary Attributes: 200V, 5A Max Output GaNFET Capability
Secondary Attributes: GaNFET Driver Circuit Uses 7V ~ 12V
Embedded: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC9003C |
![]() |
Hersteller: EPC
Description: EVAL BOARD FOR EPC2010C
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: EPC2010C
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Description: EVAL BOARD FOR EPC2010C
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: EPC2010C
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 354.94 EUR |
| EPC9004 |
![]() |
Hersteller: EPC
Description: BOARD DEV FOR EPC2012 200V EGAN
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: EPC2012
Primary Attributes: 200V, 3A Max Output GaNFET Capability
Secondary Attributes: GaNFET Driver Circuit Uses 7V ~ 12V
Embedded: No
Description: BOARD DEV FOR EPC2012 200V EGAN
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: EPC2012
Primary Attributes: 200V, 3A Max Output GaNFET Capability
Secondary Attributes: GaNFET Driver Circuit Uses 7V ~ 12V
Embedded: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC9004C |
![]() |
Hersteller: EPC
Description: EVAL BOARD FOR EPC2012C
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: EPC2012C
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Description: EVAL BOARD FOR EPC2012C
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: EPC2012C
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 179.49 EUR |
| EPC9005 |
![]() |
Hersteller: EPC
Description: BOARD DEV FOR EPC2014 40V EGAN
Embedded: No
Secondary Attributes: GaNFET Driver Circuit Uses 7V ~ 12V
Primary Attributes: 40V, 5A Max Output GaNFET Capability
Utilized IC / Part: EPC2014
Contents: Board(s)
Type: Power Management
Function: Half H-Bridge Driver (External FET)
Packaging: Bulk
Description: BOARD DEV FOR EPC2014 40V EGAN
Embedded: No
Secondary Attributes: GaNFET Driver Circuit Uses 7V ~ 12V
Primary Attributes: 40V, 5A Max Output GaNFET Capability
Utilized IC / Part: EPC2014
Contents: Board(s)
Type: Power Management
Function: Half H-Bridge Driver (External FET)
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC9005C |
![]() |
Hersteller: EPC
Description: EVAL BOARD FOR EPC2014C
Contents: Board(s)
Part Status: Active
Embedded: No
Supplied Contents: Board(s)
Utilized IC / Part: EPC2014C
Type: Power Management
Function: Half H-Bridge Driver (External FET)
Packaging: Bulk
Description: EVAL BOARD FOR EPC2014C
Contents: Board(s)
Part Status: Active
Embedded: No
Supplied Contents: Board(s)
Utilized IC / Part: EPC2014C
Type: Power Management
Function: Half H-Bridge Driver (External FET)
Packaging: Bulk
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 394.21 EUR |
| EPC9006 |
![]() |
Hersteller: EPC
Description: BOARD DEV FOR EPC2007 100V EGAN
Secondary Attributes: GaNFET Driver Circuit Uses 7V ~ 12V
Contents: Board(s)
Part Status: Obsolete
Embedded: No
Primary Attributes: 100V, 5A Max Output GaNFET Capability
Supplied Contents: Board(s)
Utilized IC / Part: EPC2007
Type: Power Management
Function: Half H-Bridge Driver (External FET)
Packaging: Bulk
Description: BOARD DEV FOR EPC2007 100V EGAN
Secondary Attributes: GaNFET Driver Circuit Uses 7V ~ 12V
Contents: Board(s)
Part Status: Obsolete
Embedded: No
Primary Attributes: 100V, 5A Max Output GaNFET Capability
Supplied Contents: Board(s)
Utilized IC / Part: EPC2007
Type: Power Management
Function: Half H-Bridge Driver (External FET)
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC9006C |
![]() |
Hersteller: EPC
Description: BOARD DEV FOR EPC2007C 100V
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: EPC2007C
Supplied Contents: Board(s)
Primary Attributes: 100V, 7A Max Output GaNFET Capability
Secondary Attributes: GaNFET Driver Circuit Uses 7V ~ 12V
Embedded: No
Part Status: Active
Description: BOARD DEV FOR EPC2007C 100V
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: EPC2007C
Supplied Contents: Board(s)
Primary Attributes: 100V, 7A Max Output GaNFET Capability
Secondary Attributes: GaNFET Driver Circuit Uses 7V ~ 12V
Embedded: No
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 389.34 EUR |
| EPC9010 |
![]() |
Hersteller: EPC
Description: EVAL BOARD FOR EPC2016
Contents: Board(s)
Embedded: No
Primary Attributes: 100V, 7A Max Output GaNFET Capability
Supplied Contents: Board(s)
Utilized IC / Part: EPC2016
Type: Power Management
Function: Half H-Bridge Driver (External FET)
Packaging: Bulk
Description: EVAL BOARD FOR EPC2016
Contents: Board(s)
Embedded: No
Primary Attributes: 100V, 7A Max Output GaNFET Capability
Supplied Contents: Board(s)
Utilized IC / Part: EPC2016
Type: Power Management
Function: Half H-Bridge Driver (External FET)
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC9010C |
![]() |
Hersteller: EPC
Description: DEV BOARD EPC2016C 100V EGAN
Supplied Contents: Board(s)
Utilized IC / Part: EPC2016C
Type: Power Management
Function: Half H-Bridge Driver (External FET)
Packaging: Bulk
Description: DEV BOARD EPC2016C 100V EGAN
Supplied Contents: Board(s)
Utilized IC / Part: EPC2016C
Type: Power Management
Function: Half H-Bridge Driver (External FET)
Packaging: Bulk
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 386.8 EUR |
| EPC90120 |
![]() |
Hersteller: EPC
Description: EVAL BOARD FOR EPC2152
Packaging: Box
Type: Power Management
Utilized IC / Part: EPC2152
Supplied Contents: Board(s)
Contents: Board(s)
Description: EVAL BOARD FOR EPC2152
Packaging: Box
Type: Power Management
Utilized IC / Part: EPC2152
Supplied Contents: Board(s)
Contents: Board(s)
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 351.11 EUR |
| EPC90121 |
![]() |
Hersteller: EPC
Description: EVAL BOARD FOR EPC2050
Primary Attributes: 280V, 4A Max Output GaNFET Capability
Supplied Contents: Board(s)
Utilized IC / Part: EPC2050
Type: Power Management
Function: Half H-Bridge Driver (External FET)
Packaging: Box
Contents: Board(s)
Secondary Attributes: GaNFET Driver Circuit Uses 10V ~ 12V
Description: EVAL BOARD FOR EPC2050
Primary Attributes: 280V, 4A Max Output GaNFET Capability
Supplied Contents: Board(s)
Utilized IC / Part: EPC2050
Type: Power Management
Function: Half H-Bridge Driver (External FET)
Packaging: Box
Contents: Board(s)
Secondary Attributes: GaNFET Driver Circuit Uses 10V ~ 12V
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 363.99 EUR |
| EPC90122 |
![]() |
Hersteller: EPC
Description: EVAL BOARD FOR EPC90122
Contents: Board(s)
Supplied Contents: Board(s)
Utilized IC / Part: EPC90122
Type: Power Management
Function: Half H-Bridge Driver (External FET)
Packaging: Box
Description: EVAL BOARD FOR EPC90122
Contents: Board(s)
Supplied Contents: Board(s)
Utilized IC / Part: EPC90122
Type: Power Management
Function: Half H-Bridge Driver (External FET)
Packaging: Box
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 352.85 EUR |
| EPC90123 |
![]() |
Hersteller: EPC
Description: EVAL BOARD FOR EPC2218
Packaging: Box
Type: Power Management
Contents: Board(s)
Utilized IC / Part: EPC2218
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL BOARD FOR EPC2218
Packaging: Box
Type: Power Management
Contents: Board(s)
Utilized IC / Part: EPC2218
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 352.85 EUR |
| EPC90124 |
![]() |
Hersteller: EPC
Description: EVAL BOARD FOR EPC2207
Packaging: Box
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: EPC2207
Supplied Contents: Board(s)
Primary Attributes: 200V, 8A Max Output GaNFET Capability
Description: EVAL BOARD FOR EPC2207
Packaging: Box
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: EPC2207
Supplied Contents: Board(s)
Primary Attributes: 200V, 8A Max Output GaNFET Capability
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 363.99 EUR |























