| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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EPC23102ENGRT | EPC |
 Description: IC HALF BRIDGE DRIVER 35A 13WQFNFeatures: Bootstrap Circuit Packaging: Cut Tape (CT) Package / Case: 13-PowerWFQFN Mounting Type: Surface Mount, Wettable Flank Interface: Logic, PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 5.2mOhm LS, 5.2mOhm HS Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose Current - Output / Channel: 35A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 10V ~ 80V Supplier Device Package: 13-WQFN-HR (3.5x5) Fault Protection: Current Limiting, ESD, Over Voltage, UVLO Load Type: Inductive, Capacitive, Resistive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC23103ENGRT | EPC |
Description: IC GAN EPOWER STAGE 100V 20A Features: Bootstrap Circuit, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 13-PowerWFQFN Mounting Type: Surface Mount, Wettable Flank Interface: Logic Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 10V ~ 80V Rds On (Typ): 7.6mOhm LS + HS Applications: DC Motors, DC-DC Converters Current - Output / Channel: 25A Current - Peak Output: 109A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 10V ~ 80V Supplier Device Package: 13-WQFN-HR (3.5x5) Fault Protection: ESD, Over Voltage, Short Circuit Load Type: Capacitive and Resistive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC23103ENGRT | EPC |
Description: IC GAN EPOWER STAGE 100V 20A Features: Bootstrap Circuit, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 13-PowerWFQFN Mounting Type: Surface Mount, Wettable Flank Interface: Logic Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 10V ~ 80V Rds On (Typ): 7.6mOhm LS + HS Applications: DC Motors, DC-DC Converters Current - Output / Channel: 25A Current - Peak Output: 109A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 10V ~ 80V Supplier Device Package: 13-WQFN-HR (3.5x5) Fault Protection: ESD, Over Voltage, Short Circuit Load Type: Capacitive and Resistive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC23104 | EPC |
Description: IC GAN EPWR STAGE 100V 10A 13QFN Features: Bootstrap Circuit, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 13-PowerWFQFN Mounting Type: Surface Mount, Wettable Flank Interface: Logic Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 10V ~ 80V Rds On (Typ): 7.6mOhm LS + HS Applications: DC Motors, DC-DC Converters Current - Output / Channel: 15A Current - Peak Output: 78A Technology: NMOS Voltage - Load: 10V ~ 80V Supplier Device Package: 13-WQFN-HR (3.5x5) Fault Protection: ESD, Over Voltage, Short Circuit Load Type: Capacitive and Resistive |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC23104 | EPC |
Description: IC GAN EPWR STAGE 100V 10A 13QFN Features: Bootstrap Circuit, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 13-PowerWFQFN Mounting Type: Surface Mount, Wettable Flank Interface: Logic Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 10V ~ 80V Rds On (Typ): 7.6mOhm LS + HS Applications: DC Motors, DC-DC Converters Current - Output / Channel: 15A Current - Peak Output: 78A Technology: NMOS Voltage - Load: 10V ~ 80V Supplier Device Package: 13-WQFN-HR (3.5x5) Fault Protection: ESD, Over Voltage, Short Circuit Load Type: Capacitive and Resistive |
auf Bestellung 3750 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC23104ENGRT | EPC |
Description: IC HALF BRIDGE DRIVER 15A 13WQFN Features: Bootstrap Circuit, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 13-PowerWFQFN Mounting Type: Surface Mount, Wettable Flank Interface: Logic Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 10V ~ 80V Rds On (Typ): 7.6mOhm LS + HS Applications: DC Motors, DC-DC Converters Current - Output / Channel: 15A Current - Peak Output: 78A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 10V ~ 80V Supplier Device Package: 13-WQFN-HR (3.5x5) Fault Protection: ESD, Over Voltage, Short Circuit Load Type: Capacitive and Resistive |
auf Bestellung 7927 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC23104ENGRT | EPC |
Description: IC HALF BRIDGE DRIVER 15A 13WQFN Features: Bootstrap Circuit, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 13-PowerWFQFN Mounting Type: Surface Mount, Wettable Flank Interface: Logic Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 10V ~ 80V Rds On (Typ): 7.6mOhm LS + HS Applications: DC Motors, DC-DC Converters Current - Output / Channel: 15A Current - Peak Output: 78A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 10V ~ 80V Supplier Device Package: 13-WQFN-HR (3.5x5) Fault Protection: ESD, Over Voltage, Short Circuit Load Type: Capacitive and Resistive |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2361 | EPC |
GaN FETs EPC eGaN FET,80 V, 1.0 milliohm at 5 V, 3 mm x 5 mm QFN |
auf Bestellung 10142 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2361 | EPC |
Description: TRANS GAN 100V DIE,1 MOHM, 7PINQ Packaging: Tape & Reel (TR) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 101A (Ta) Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V Vgs(th) (Max) @ Id: 2.5V @ 15mA Supplier Device Package: 7-QFN (3x5) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2361 | EPC |
Description: TRANS GAN 100V DIE,1 MOHM, 7PINQ Packaging: Cut Tape (CT) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 101A (Ta) Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V Vgs(th) (Max) @ Id: 2.5V @ 15mA Supplier Device Package: 7-QFN (3x5) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V |
auf Bestellung 32633 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2361ENGRT | EPC |
Description: TRANS GAN 100V .001OHM 7QFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2361ENGRT | EPC |
Description: TRANS GAN 100V .001OHM 7QFN Packaging: Cut Tape (CT) |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2366 | EPC |
Description: GANFET N-CH 40V 88A 5QFN |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2366 | EPC |
Description: GANFET N-CH 40V 88A 5QFN |
auf Bestellung 5124 Stücke: Lieferzeit 10-14 Tag (e) |
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| EPC2366ENGRT | EPC |
Description: TRANS GAN 40V DIE,0.8 MOHM,5PINQ Packaging: Tape & Reel (TR) Package / Case: 5-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 88A Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 12mA Supplier Device Package: 5-QFN (3.3x2.6) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| EPC2366ENGRT | EPC |
Description: TRANS GAN 40V DIE,0.8 MOHM,5PINQ Packaging: Cut Tape (CT) Package / Case: 5-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 88A Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 12mA Supplier Device Package: 5-QFN (3.3x2.6) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V |
auf Bestellung 443 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2367 | EPC |
Description: GANFET N-CH 100V 101A 5QFN Packaging: Tape & Reel (TR) Package / Case: 5-PowerWQFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tj) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 10mA Supplier Device Package: 5-QFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V |
auf Bestellung 28028 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2367 | EPC |
Description: GANFET N-CH 100V 101A 5QFN Packaging: Cut Tape (CT) Package / Case: 5-PowerWQFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tj) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 10mA Supplier Device Package: 5-QFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V |
auf Bestellung 29110 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2367 | EPC |
GaN FETs EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN |
auf Bestellung 14047 Stücke: Lieferzeit 10-14 Tag (e) |
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| EPC2367A | EPC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| EPC2378 | EPC |
Description: 25V, 101A, 0.37M, 3.3X3.3MM PQFN |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| EPC2378 | EPC |
Description: 25V, 101A, 0.37M, 3.3X3.3MM PQFN |
auf Bestellung 7653 Stücke: Lieferzeit 10-14 Tag (e) |
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| EPC2378 | EPC |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| EPC2378 | EPC |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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EPC2619 | EPC |
GaN FETs EPC eGaN FET,100 V, 3.3 milliohm typ at 5 V, LGA 2.5 x 1.5 |
auf Bestellung 7251 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2619 | EPC |
Description: TRANS GAN 100V .0042 OHM 6LGA Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V |
auf Bestellung 17320 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2619 | EPC |
Description: TRANS GAN 100V .0042 OHM 6LGA Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2619ENGRT | EPC |
Description: TRANS GAN 80V .0033OHM 6LGA Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2619ENGRT | EPC |
Description: TRANS GAN 80V .0033OHM 6LGA Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2801 | EPC |
Description: TRANS GAN 100V 25A BUMPED DIE |
auf Bestellung 354 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2801 | EPC |
Description: TRANS GAN 100V 25A BUMPED DIE |
auf Bestellung 354 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2801 | EPC |
Description: TRANS GAN 100V 25A BUMPED DIE |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2815 | EPC |
Description: TRANS GAN 40V 33A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2815 | EPC |
Description: TRANS GAN 40V 33A BUMPED DIE |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2815 | EPC |
Description: TRANS GAN 40V 33A BUMPED DIE |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2818 | EPC |
Description: TRANS GAN 150V 12A BUMPED DIE |
auf Bestellung 705 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2818 | EPC |
Description: TRANS GAN 150V 12A BUMPED DIE |
auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2818 | EPC |
Description: TRANS GAN 150V 12A BUMPED DIE |
auf Bestellung 705 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC33110 | EPC | Motor/Motion/Ignition Controllers & Drivers |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC8002 | EPC |
GaN FETs EPC eGaN FET,65 V, 480 milliohm at 5 V, LGA 2.05 x 0.85 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC8002 | EPC |
Description: GANFET N-CH 65V 2A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 530mOhm @ 500mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 65 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 32.5 V |
auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC8002 | EPC |
Description: GANFET N-CH 65V 2A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 530mOhm @ 500mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 65 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 32.5 V |
auf Bestellung 36646 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC8002ENGR | EPC |
Description: TRANS GAN 65V 2A BUMPED DIE |
auf Bestellung 530 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC8002TENGR | EPC |
Description: TRANS GAN 65V 2A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC8003ENGR | EPC |
Description: TRANS GAN 100V 2.5A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC8003TENGR | EPC |
Description: TRANS GAN 100V 2.5A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC8004 | EPC |
Description: GANFET N-CH 40V 4A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 20 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20 |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC8004 | EPC |
Description: GANFET N-CH 40V 4A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 20 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20 |
auf Bestellung 8002 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC8004ENGR | EPC |
Description: TRANS GAN 40V 4.4A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC8004TENGR | EPC |
Description: TRANS GAN 40V 4.4A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC8005ENGR | EPC |
Description: TRANS GAN 65V 2.9A BUMPED DIE |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC8005TENGR | EPC |
Description: TRANS GAN 65V 2.9A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC8007ENGR | EPC |
Description: TRANS GAN 40V 3.8A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC8007TENGR | EPC |
Description: TRANS GAN 40V 3.8A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC8008ENGR | EPC |
Description: TRANS GAN 40V 2.7A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC8008TENGR | EPC |
Description: TRANS GAN 40V 2.7A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC8009 | EPC |
Description: GANFET N-CH 65V 4A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 32.5 V |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC8009 | EPC |
Description: GANFET N-CH 65V 4A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 32.5 V |
auf Bestellung 7082 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC8009ENGR | EPC |
Description: TRANS GAN 65V 4.1A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC8009TENGR | EPC |
Description: TRANS GAN 65V 4.1A BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
| EPC23102ENGRT |
|
Hersteller: EPC
Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 5.2mOhm LS, 5.2mOhm HS
Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
Current - Output / Channel: 35A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: Current Limiting, ESD, Over Voltage, UVLO
Load Type: Inductive, Capacitive, Resistive
Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 5.2mOhm LS, 5.2mOhm HS
Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
Current - Output / Channel: 35A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: Current Limiting, ESD, Over Voltage, UVLO
Load Type: Inductive, Capacitive, Resistive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC23103ENGRT |
|
Hersteller: EPC
Description: IC GAN EPOWER STAGE 100V 20A
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 25A
Current - Peak Output: 109A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
Description: IC GAN EPOWER STAGE 100V 20A
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 25A
Current - Peak Output: 109A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC23103ENGRT |
|
Hersteller: EPC
Description: IC GAN EPOWER STAGE 100V 20A
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 25A
Current - Peak Output: 109A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
Description: IC GAN EPOWER STAGE 100V 20A
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 25A
Current - Peak Output: 109A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC23104 |
|
Hersteller: EPC
Description: IC GAN EPWR STAGE 100V 10A 13QFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: NMOS
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
Description: IC GAN EPWR STAGE 100V 10A 13QFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: NMOS
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 5.12 EUR |
| EPC23104 |
|
Hersteller: EPC
Description: IC GAN EPWR STAGE 100V 10A 13QFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: NMOS
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
Description: IC GAN EPWR STAGE 100V 10A 13QFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: NMOS
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
auf Bestellung 3750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.28 EUR |
| 10+ | 7.06 EUR |
| 25+ | 6.51 EUR |
| 100+ | 5.9 EUR |
| 250+ | 5.63 EUR |
| EPC23104ENGRT |
|
Hersteller: EPC
Description: IC HALF BRIDGE DRIVER 15A 13WQFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
Description: IC HALF BRIDGE DRIVER 15A 13WQFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
auf Bestellung 7927 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.28 EUR |
| 10+ | 7.06 EUR |
| 25+ | 6.51 EUR |
| 100+ | 5.9 EUR |
| 250+ | 5.63 EUR |
| EPC23104ENGRT |
|
Hersteller: EPC
Description: IC HALF BRIDGE DRIVER 15A 13WQFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
Description: IC HALF BRIDGE DRIVER 15A 13WQFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 5.12 EUR |
| EPC2361 |
|
Hersteller: EPC
GaN FETs EPC eGaN FET,80 V, 1.0 milliohm at 5 V, 3 mm x 5 mm QFN
GaN FETs EPC eGaN FET,80 V, 1.0 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 10142 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.36 EUR |
| 10+ | 8.46 EUR |
| 100+ | 7.79 EUR |
| 500+ | 7.31 EUR |
| 1000+ | 6.69 EUR |
| 3000+ | 6.25 EUR |
| EPC2361 |
|
Hersteller: EPC
Description: TRANS GAN 100V DIE,1 MOHM, 7PINQ
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V
Description: TRANS GAN 100V DIE,1 MOHM, 7PINQ
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 6.68 EUR |
| EPC2361 |
|
Hersteller: EPC
Description: TRANS GAN 100V DIE,1 MOHM, 7PINQ
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V
Description: TRANS GAN 100V DIE,1 MOHM, 7PINQ
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V
auf Bestellung 32633 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.34 EUR |
| 10+ | 11.15 EUR |
| 50+ | 8.92 EUR |
| 100+ | 8.21 EUR |
| 500+ | 8.18 EUR |
| EPC2361ENGRT |
|
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.31 EUR |
| EPC2366 |
|
Hersteller: EPC
Description: GANFET N-CH 40V 88A 5QFN
Description: GANFET N-CH 40V 88A 5QFN
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.87 EUR |
| EPC2366 |
|
Hersteller: EPC
Description: GANFET N-CH 40V 88A 5QFN
Description: GANFET N-CH 40V 88A 5QFN
auf Bestellung 5124 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.76 EUR |
| 10+ | 5.77 EUR |
| 50+ | 4.5 EUR |
| 100+ | 4.08 EUR |
| 500+ | 3.52 EUR |
| EPC2366ENGRT |
|
Hersteller: EPC
Description: TRANS GAN 40V DIE,0.8 MOHM,5PINQ
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A
Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-QFN (3.3x2.6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V
Description: TRANS GAN 40V DIE,0.8 MOHM,5PINQ
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A
Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-QFN (3.3x2.6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC2366ENGRT |
|
Hersteller: EPC
Description: TRANS GAN 40V DIE,0.8 MOHM,5PINQ
Packaging: Cut Tape (CT)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A
Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-QFN (3.3x2.6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V
Description: TRANS GAN 40V DIE,0.8 MOHM,5PINQ
Packaging: Cut Tape (CT)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A
Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-QFN (3.3x2.6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V
auf Bestellung 443 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.88 EUR |
| 10+ | 5.19 EUR |
| 100+ | 3.67 EUR |
| EPC2367 |
|
Hersteller: EPC
Description: GANFET N-CH 100V 101A 5QFN
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 5-QFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V
Description: GANFET N-CH 100V 101A 5QFN
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 5-QFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V
auf Bestellung 28028 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 5.18 EUR |
| EPC2367 |
|
Hersteller: EPC
Description: GANFET N-CH 100V 101A 5QFN
Packaging: Cut Tape (CT)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 5-QFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V
Description: GANFET N-CH 100V 101A 5QFN
Packaging: Cut Tape (CT)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 5-QFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V
auf Bestellung 29110 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.55 EUR |
| 10+ | 9.15 EUR |
| 50+ | 7.26 EUR |
| 100+ | 6.65 EUR |
| 500+ | 6.33 EUR |
| EPC2367 |
|
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN
GaN FETs EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN
auf Bestellung 14047 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.34 EUR |
| 10+ | 6.71 EUR |
| 100+ | 6.15 EUR |
| 500+ | 5.85 EUR |
| 1000+ | 5.22 EUR |
| 3000+ | 4.7 EUR |
| EPC2378 |
|
Hersteller: EPC
Description: 25V, 101A, 0.37M, 3.3X3.3MM PQFN
Description: 25V, 101A, 0.37M, 3.3X3.3MM PQFN
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 4.49 EUR |
| EPC2378 |
|
Hersteller: EPC
Description: 25V, 101A, 0.37M, 3.3X3.3MM PQFN
Description: 25V, 101A, 0.37M, 3.3X3.3MM PQFN
auf Bestellung 7653 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.1 EUR |
| 10+ | 8.13 EUR |
| 50+ | 6.43 EUR |
| 100+ | 5.88 EUR |
| 500+ | 5.49 EUR |
| EPC2619 |
|
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 3.3 milliohm typ at 5 V, LGA 2.5 x 1.5
GaN FETs EPC eGaN FET,100 V, 3.3 milliohm typ at 5 V, LGA 2.5 x 1.5
auf Bestellung 7251 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.4 EUR |
| 10+ | 4.87 EUR |
| 100+ | 4.12 EUR |
| 500+ | 3.45 EUR |
| 1000+ | 3.26 EUR |
| 2500+ | 2.96 EUR |
| 5000+ | 2.73 EUR |
| EPC2619 |
|
Hersteller: EPC
Description: TRANS GAN 100V .0042 OHM 6LGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
Description: TRANS GAN 100V .0042 OHM 6LGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
auf Bestellung 17320 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.01 EUR |
| 10+ | 5.95 EUR |
| 50+ | 4.64 EUR |
| 100+ | 4.21 EUR |
| 500+ | 3.65 EUR |
| EPC2619 |
|
Hersteller: EPC
Description: TRANS GAN 100V .0042 OHM 6LGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
Description: TRANS GAN 100V .0042 OHM 6LGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.99 EUR |
| EPC2619ENGRT |
|
Hersteller: EPC
Description: TRANS GAN 80V .0033OHM 6LGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
Description: TRANS GAN 80V .0033OHM 6LGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC2619ENGRT |
|
Hersteller: EPC
Description: TRANS GAN 80V .0033OHM 6LGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
Description: TRANS GAN 80V .0033OHM 6LGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2801 |
|
Hersteller: EPC
Description: TRANS GAN 100V 25A BUMPED DIE
Description: TRANS GAN 100V 25A BUMPED DIE
auf Bestellung 354 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2801 |
|
Hersteller: EPC
Description: TRANS GAN 100V 25A BUMPED DIE
Description: TRANS GAN 100V 25A BUMPED DIE
auf Bestellung 354 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2801 |
|
Hersteller: EPC
Description: TRANS GAN 100V 25A BUMPED DIE
Description: TRANS GAN 100V 25A BUMPED DIE
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2815 |
|
Hersteller: EPC
Description: TRANS GAN 40V 33A BUMPED DIE
Description: TRANS GAN 40V 33A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC2815 |
|
Hersteller: EPC
Description: TRANS GAN 40V 33A BUMPED DIE
Description: TRANS GAN 40V 33A BUMPED DIE
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2815 |
|
Hersteller: EPC
Description: TRANS GAN 40V 33A BUMPED DIE
Description: TRANS GAN 40V 33A BUMPED DIE
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2818 |
|
Hersteller: EPC
Description: TRANS GAN 150V 12A BUMPED DIE
Description: TRANS GAN 150V 12A BUMPED DIE
auf Bestellung 705 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2818 |
|
Hersteller: EPC
Description: TRANS GAN 150V 12A BUMPED DIE
Description: TRANS GAN 150V 12A BUMPED DIE
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2818 |
|
Hersteller: EPC
Description: TRANS GAN 150V 12A BUMPED DIE
Description: TRANS GAN 150V 12A BUMPED DIE
auf Bestellung 705 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC33110 |
Hersteller: EPC
Motor/Motion/Ignition Controllers & Drivers
Motor/Motion/Ignition Controllers & Drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC8002 |
|
Hersteller: EPC
GaN FETs EPC eGaN FET,65 V, 480 milliohm at 5 V, LGA 2.05 x 0.85
GaN FETs EPC eGaN FET,65 V, 480 milliohm at 5 V, LGA 2.05 x 0.85
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC8002 |
|
Hersteller: EPC
Description: GANFET N-CH 65V 2A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 530mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 32.5 V
Description: GANFET N-CH 65V 2A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 530mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 32.5 V
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 3.01 EUR |
| EPC8002 |
|
Hersteller: EPC
Description: GANFET N-CH 65V 2A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 530mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 32.5 V
Description: GANFET N-CH 65V 2A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 530mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 32.5 V
auf Bestellung 36646 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.15 EUR |
| 10+ | 6.05 EUR |
| 50+ | 4.7 EUR |
| 100+ | 4.27 EUR |
| 500+ | 3.67 EUR |
| EPC8002ENGR |
|
Hersteller: EPC
Description: TRANS GAN 65V 2A BUMPED DIE
Description: TRANS GAN 65V 2A BUMPED DIE
auf Bestellung 530 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC8002TENGR |
|
Hersteller: EPC
Description: TRANS GAN 65V 2A BUMPED DIE
Description: TRANS GAN 65V 2A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8003ENGR |
|
Hersteller: EPC
Description: TRANS GAN 100V 2.5A BUMPED DIE
Description: TRANS GAN 100V 2.5A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8003TENGR |
|
Hersteller: EPC
Description: TRANS GAN 100V 2.5A BUMPED DIE
Description: TRANS GAN 100V 2.5A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8004 |
|
Hersteller: EPC
Description: GANFET N-CH 40V 4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
Description: GANFET N-CH 40V 4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.76 EUR |
| EPC8004 |
|
Hersteller: EPC
Description: GANFET N-CH 40V 4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
Description: GANFET N-CH 40V 4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
auf Bestellung 8002 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.44 EUR |
| 10+ | 5.56 EUR |
| 50+ | 4.32 EUR |
| 100+ | 3.93 EUR |
| 500+ | 3.34 EUR |
| EPC8004ENGR |
|
Hersteller: EPC
Description: TRANS GAN 40V 4.4A BUMPED DIE
Description: TRANS GAN 40V 4.4A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8004TENGR |
|
Hersteller: EPC
Description: TRANS GAN 40V 4.4A BUMPED DIE
Description: TRANS GAN 40V 4.4A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8005ENGR |
|
Hersteller: EPC
Description: TRANS GAN 65V 2.9A BUMPED DIE
Description: TRANS GAN 65V 2.9A BUMPED DIE
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC8005TENGR |
|
Hersteller: EPC
Description: TRANS GAN 65V 2.9A BUMPED DIE
Description: TRANS GAN 65V 2.9A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8007ENGR |
|
Hersteller: EPC
Description: TRANS GAN 40V 3.8A BUMPED DIE
Description: TRANS GAN 40V 3.8A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8007TENGR |
|
Hersteller: EPC
Description: TRANS GAN 40V 3.8A BUMPED DIE
Description: TRANS GAN 40V 3.8A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8008ENGR |
|
Hersteller: EPC
Description: TRANS GAN 40V 2.7A BUMPED DIE
Description: TRANS GAN 40V 2.7A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8008TENGR |
|
Hersteller: EPC
Description: TRANS GAN 40V 2.7A BUMPED DIE
Description: TRANS GAN 40V 2.7A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8009 |
|
Hersteller: EPC
Description: GANFET N-CH 65V 4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 32.5 V
Description: GANFET N-CH 65V 4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 32.5 V
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.94 EUR |
| EPC8009 |
|
Hersteller: EPC
Description: GANFET N-CH 65V 4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 32.5 V
Description: GANFET N-CH 65V 4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 32.5 V
auf Bestellung 7082 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.84 EUR |
| 10+ | 5.84 EUR |
| 50+ | 4.56 EUR |
| 100+ | 4.14 EUR |
| 500+ | 3.59 EUR |
| EPC8009ENGR |
|
Hersteller: EPC
Description: TRANS GAN 65V 4.1A BUMPED DIE
Description: TRANS GAN 65V 4.1A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC8009TENGR |
|
Hersteller: EPC
Description: TRANS GAN 65V 4.1A BUMPED DIE
Description: TRANS GAN 65V 4.1A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH