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EPC2215 EPC2215 EPC EPC2215_datasheet.pdf Description: GAN TRANS 200V 8MOHM BUMPED DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+4.82 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2215 EPC2215 EPC EPC2215_datasheet.pdf Description: GAN TRANS 200V 8MOHM BUMPED DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 61677 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.04 EUR
10+8.77 EUR
50+6.93 EUR
100+6.33 EUR
500+5.9 EUR
Mindestbestellmenge: 2 Stücke
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EPC2216 EPC2216 EPC EPC2216_datasheet.pdf GaN FETs EPC eGaN FET,15 V, 26 milliohm at 5 V, BGA 0.85 x 1.2
auf Bestellung 4892 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.56 EUR
10+1.76 EUR
100+1.52 EUR
500+1.23 EUR
1000+1.15 EUR
2500+1.01 EUR
5000+0.93 EUR
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EPC2216 EPC2216 EPC EPC2216_datasheet.pdf Description: GANFET N-CH 15V 3.4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 7.5 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.01 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2216 EPC2216 EPC EPC2216_datasheet.pdf Description: GANFET N-CH 15V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 7.5 V
Qualification: AEC-Q101
auf Bestellung 31656 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.86 EUR
10+2.46 EUR
100+1.67 EUR
500+1.32 EUR
1000+1.21 EUR
Mindestbestellmenge: 6 Stücke
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EPC2218 EPC2218 EPC EPC2218_datasheet.pdf?ver=C-R46UeqE-iEjg6gr7hUEg%3d%3d Description: GANFET N-CH 100V DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 17350 Stücke:
Lieferzeit 10-14 Tag (e)
1000+6.1 EUR
3000+6.09 EUR
Mindestbestellmenge: 1000 Stücke
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EPC2218 EPC EPC2218_datasheet.pdf?ver=C-R46UeqE-iEjg6gr7hUEg%3d%3d
Produkt ist nicht verfügbar
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EPC2218 EPC2218 EPC EPC2218_datasheet.pdf?ver=C-R46UeqE-iEjg6gr7hUEg%3d%3d Description: GANFET N-CH 100V DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 17531 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.57 EUR
10+10.54 EUR
50+8.39 EUR
100+7.7 EUR
500+7.46 EUR
Mindestbestellmenge: 2 Stücke
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EPC2218A EPC2218A EPC EPC2218A_datasheet.pdf Description: TRANS GAN 80V .0032OHM AECQ101
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 25058 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.23 EUR
10+8.21 EUR
50+6.49 EUR
100+5.93 EUR
500+5.51 EUR
Mindestbestellmenge: 2 Stücke
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EPC2218A EPC2218A EPC EPC2218A_datasheet.pdf Description: TRANS GAN 80V .0032OHM AECQ101
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+4.91 EUR
3000+4.77 EUR
Mindestbestellmenge: 1000 Stücke
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EPC2218A EPC2218A EPC EPC2218A_datasheet.pdf GaN FETs EPC eGaN FET,80 V, 3.2 milliohm at 5 V, LGA 3.5 x 1.95
auf Bestellung 4984 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.29 EUR
10+6 EUR
100+5.49 EUR
500+5.09 EUR
1000+4.11 EUR
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EPC2219 EPC2219 EPC EPC2219_datasheet.pdf Description: TRANS GAN 65V AECQ101 3.3OHM DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.12 EUR
5000+1.07 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2219 EPC2219 EPC EPC2219_datasheet.pdf Description: TRANS GAN 65V AECQ101 3.3OHM DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V
auf Bestellung 7999 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.7 EUR
10+2.21 EUR
100+1.73 EUR
500+1.46 EUR
1000+1.19 EUR
Mindestbestellmenge: 8 Stücke
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EPC2221 EPC2221 EPC epc2221_datasheet.pdf Description: GANFET 2N-CH 100V 5A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5A
Supplier Device Package: Die
Part Status: Active
auf Bestellung 4109 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.64 EUR
10+4.34 EUR
100+3.03 EUR
500+2.46 EUR
1000+2.28 EUR
Mindestbestellmenge: 4 Stücke
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EPC2221 EPC2221 EPC epc2221_datasheet.pdf Description: GANFET 2N-CH 100V 5A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5A
Supplier Device Package: Die
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.17 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2221 EPC2221 EPC epc2221_datasheet.pdf GaN FETs EPC AEC eGaN Dual FET,100 V, 58 milliohm at 5 V, BGA 1.35 x 1.35
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.26 EUR
10+3.26 EUR
100+2.93 EUR
500+2.4 EUR
1000+2.33 EUR
2500+2.01 EUR
5000+1.92 EUR
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EPC2234 EPC2234 EPC EPC2234_datasheet.pdf Description: TRANS GAN AEC 160V .008OHM 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 24-BGA (4.6x2.6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 160 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
500+12.39 EUR
Mindestbestellmenge: 500 Stücke
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EPC2234 EPC2234 EPC EPC2234_datasheet.pdf GaN FETs EPC eGaN FET,160 V, 8 milliohm at 5 V, BGA 4.6 x 2.6
auf Bestellung 457 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.61 EUR
10+13.23 EUR
500+10.79 EUR
1000+10.69 EUR
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EPC2234 EPC2234 EPC EPC2234_datasheet.pdf Description: TRANS GAN AEC 160V .008OHM 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 24-BGA (4.6x2.6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 160 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 3547 Stücke:
Lieferzeit 10-14 Tag (e)
1+26.7 EUR
10+18.62 EUR
50+15.18 EUR
100+15.16 EUR
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EPC2252 EPC2252 EPC EPC2252_datasheet.pdf GaN FETs eGaN FET, 80V, 11milliohm at 5 V, 1.5 x 1.5mm BGA
auf Bestellung 10531 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.41 EUR
10+2.2 EUR
100+1.98 EUR
500+1.58 EUR
1000+1.52 EUR
2500+1.32 EUR
5000+1.25 EUR
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EPC2252 EPC2252 EPC EPC2252_datasheet.pdf Description: TRANSGAN 80V.011OHM AECQ101 9BGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 576 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.51 EUR
7500+1.38 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2252 EPC2252 EPC EPC2252_datasheet.pdf Description: TRANSGAN 80V.011OHM AECQ101 9BGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 576 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 47158 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.09 EUR
10+3.28 EUR
50+2.5 EUR
100+2.25 EUR
500+1.81 EUR
Mindestbestellmenge: 5 Stücke
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EPC2302 EPC2302 EPC epc2302_datasheet.pdf Description: TRANS GAN 100V DIE .0018OHM
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 29700 Stücke:
Lieferzeit 10-14 Tag (e)
3000+6.75 EUR
Mindestbestellmenge: 3000 Stücke
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EPC2302 EPC2302 EPC epc2302_datasheet.pdf GaN FETs EPC eGaN FET,100 V, 1.8 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 1097 Stücke:
Lieferzeit 10-14 Tag (e)
1+13.76 EUR
10+9.35 EUR
100+6.85 EUR
500+6.75 EUR
1000+6.19 EUR
3000+5.78 EUR
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EPC2302 EPC2302 EPC epc2302_datasheet.pdf Description: TRANS GAN 100V DIE .0018OHM
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 29834 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.71 EUR
10+11.38 EUR
50+9.08 EUR
100+8.34 EUR
500+8.2 EUR
Mindestbestellmenge: 2 Stücke
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EPC2302 EPC epc2302_datasheet.pdf N-Channel 100 V 101A (Ta) Surface Mount 7-QFN (3x5) Транзистори
Produkt ist nicht verfügbar
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EPC2302ENGRT EPC2302ENGRT EPC epc2302_datasheet.pdf Description: TRANS GAN 100V DIE .0018OHM
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2304 EPC2304 EPC EPC2304_datasheet.pdf GaN FETs EPC eGaN FET, 200 V, 5 milliohm at 5 V, 3 mm x 5 mm FCQFN
auf Bestellung 6130 Stücke:
Lieferzeit 10-14 Tag (e)
1+14.51 EUR
10+7.93 EUR
100+7.28 EUR
500+7.25 EUR
1000+6.64 EUR
3000+6.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2304 EPC2304 EPC EPC2304_datasheet.pdf Description: TRANS GAN 200V .005OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+7.16 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2304 EPC2304 EPC EPC2304_datasheet.pdf Description: TRANS GAN 200V .005OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
auf Bestellung 46007 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.56 EUR
10+11.29 EUR
50+9.04 EUR
100+8.32 EUR
500+8.27 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2304 EPC EPC2304_datasheet.pdf TRANS GAN 200V .005OHM 7QFN Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2304ENGRT EPC2304ENGRT EPC EPC2304_datasheet.pdf Description: TRANS GAN 200V .005OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2304ENGRT EPC2304ENGRT EPC EPC2304_datasheet.pdf Description: TRANS GAN 200V .005OHM 3X5PQFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2305 EPC2305 EPC EPC2305_datasheet.pdf Description: TRANS GAN 150V .0022OHM 3X5 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+6.39 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2305 EPC2305 EPC EPC2305_datasheet.pdf Description: TRANS GAN 150V .0022OHM 3X5 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
auf Bestellung 35176 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.79 EUR
10+10.76 EUR
50+8.6 EUR
100+7.91 EUR
500+7.82 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2305 EPC2305 EPC EPC2305_datasheet.pdf GaN FETs EPC eGaN FET,150 V, 2.2 milliohm typ at 5 V, QFN 3 x 5mm
auf Bestellung 14040 Stücke:
Lieferzeit 10-14 Tag (e)
1+14.13 EUR
10+7.7 EUR
100+7.08 EUR
500+7.01 EUR
1000+6.41 EUR
3000+5.95 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2305ENGRT EPC2305ENGRT EPC EPC2305_datasheet.pdf Description: TRANS GAN 150V .003OHM 3X5MM QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2305ENGRT EPC2305ENGRT EPC EPC2305_datasheet.pdf Description: TRANS GAN 150V .003OHM 3X5MM QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2306 EPC2306 EPC epc2306_datasheet.pdf Description: TRANS GAN 100V .0038OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+3.45 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2306 EPC2306 EPC epc2306_datasheet.pdf GaN FETs EPC eGaN FET,100 V, 3.1 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 11028 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.75 EUR
10+4.55 EUR
100+4.15 EUR
500+3.69 EUR
1000+3.56 EUR
3000+3.26 EUR
6000+3.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2306 EPC2306 EPC epc2306_datasheet.pdf Description: TRANS GAN 100V .0038OHM 3X5PQFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
auf Bestellung 16891 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.03 EUR
10+6.65 EUR
50+5.21 EUR
100+4.75 EUR
500+4.22 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2306ENGRT EPC2306ENGRT EPC epc2306_datasheet.pdf Description: TRANS GAN 100V .0038OHM3X5MM QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2306ENGRT EPC2306ENGRT EPC epc2306_datasheet.pdf Description: TRANS GAN 100V .0038OHM3X5MM QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
auf Bestellung 375 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.58 EUR
10+7.78 EUR
100+5.65 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2307 EPC2307 EPC EPC2307_datasheet.pdf Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2307 EPC2307 EPC EPC2307_datasheet.pdf GaN FETs EPC eGaN FET,200 V, 10 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 13674 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.75 EUR
10+4.55 EUR
100+4.15 EUR
500+3.69 EUR
1000+3.56 EUR
3000+3.26 EUR
6000+3.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2307 EPC2307 EPC EPC2307_datasheet.pdf Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
auf Bestellung 725 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.03 EUR
10+6.65 EUR
50+5.21 EUR
100+4.75 EUR
500+4.22 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2307ENGRT EPC2307ENGRT EPC EPC2307_datasheet.pdf?ver=fMAB7MZgiHweLm5wyKPLlg%3d%3d Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+5.56 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2307ENGRT EPC2307ENGRT EPC EPC2307_datasheet.pdf?ver=fMAB7MZgiHweLm5wyKPLlg%3d%3d Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
auf Bestellung 17984 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.2 EUR
10+9.63 EUR
100+7.03 EUR
500+6.81 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2308 EPC2308 EPC EPC2308_datasheet.pdf Description: TRANS GAN 150V .006OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+3.56 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2308 EPC2308 EPC EPC2308_datasheet.pdf Description: TRANS GAN 150V .006OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
auf Bestellung 4351 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.26 EUR
10+6.83 EUR
50+5.36 EUR
100+4.88 EUR
500+4.36 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2308 EPC2308 EPC EPC2308_datasheet.pdf GaN FETs EPC eGaN FET,150 V, 6 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 5807 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.95 EUR
10+4.66 EUR
100+4.27 EUR
500+3.82 EUR
1000+3.68 EUR
3000+3.38 EUR
6000+3.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2308ENGRT EPC2308ENGRT EPC EPC2308_datasheet.pdf Description: TRANS GAN 150V .006OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+4.83 EUR
Mindestbestellmenge: 3000 Stücke
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EPC2308ENGRT EPC2308ENGRT EPC EPC2308_datasheet.pdf Description: TRANS GAN 150V .006OHM 3X5PQFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
auf Bestellung 43995 Stücke:
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EPC23101 EPC
Produkt ist nicht verfügbar
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EPC23101ENGRT EPC23101ENGRT EPC EPC23101_datasheet.pdf Description: TRANS GAN 100V EPOWER STAGE
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 3.3mOhm
Applications: General Purpose
Current - Output / Channel: 65A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 14-QFN (3.5x5)
Fault Protection: ESD, UVLO
Load Type: Inductive, Capacitive, Resistive
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EPC23101ENGRT EPC23101ENGRT EPC EPC23101_datasheet.pdf Description: TRANS GAN 100V EPOWER STAGE
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 3.3mOhm
Applications: General Purpose
Current - Output / Channel: 65A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 14-QFN (3.5x5)
Fault Protection: ESD, UVLO
Load Type: Inductive, Capacitive, Resistive
auf Bestellung 4291 Stücke:
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EPC23102 EPC23102 EPC PdfFile_212927.pdf Gate Drivers Integrated Circuits 100 V ePower stage in FCQFN
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EPC23102 EPC23102 EPC PdfFile_212927.pdf Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 6.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 35A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Load Type: Inductive, Capacitive, Resistive
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EPC23102 EPC23102 EPC PdfFile_212927.pdf Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 6.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 35A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Load Type: Inductive, Capacitive, Resistive
auf Bestellung 7275 Stücke:
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EPC23102ENGRT EPC23102ENGRT EPC EPC23102_datasheet.pdf Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 5.2mOhm LS, 5.2mOhm HS
Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
Current - Output / Channel: 35A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: Current Limiting, ESD, Over Voltage, UVLO
Load Type: Inductive, Capacitive, Resistive
Produkt ist nicht verfügbar
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EPC2215 EPC2215_datasheet.pdf
EPC2215
Hersteller: EPC
Description: GAN TRANS 200V 8MOHM BUMPED DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
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EPC2215 EPC2215_datasheet.pdf
EPC2215
Hersteller: EPC
Description: GAN TRANS 200V 8MOHM BUMPED DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 61677 Stücke:
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EPC2216 EPC2216_datasheet.pdf
EPC2216
Hersteller: EPC
GaN FETs EPC eGaN FET,15 V, 26 milliohm at 5 V, BGA 0.85 x 1.2
auf Bestellung 4892 Stücke:
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100+1.52 EUR
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EPC2216 EPC2216_datasheet.pdf
EPC2216
Hersteller: EPC
Description: GANFET N-CH 15V 3.4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 7.5 V
Qualification: AEC-Q101
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2500+1.01 EUR
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EPC2216 EPC2216_datasheet.pdf
EPC2216
Hersteller: EPC
Description: GANFET N-CH 15V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 7.5 V
Qualification: AEC-Q101
auf Bestellung 31656 Stücke:
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6+3.86 EUR
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100+1.67 EUR
500+1.32 EUR
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EPC2218 EPC2218_datasheet.pdf?ver=C-R46UeqE-iEjg6gr7hUEg%3d%3d
EPC2218
Hersteller: EPC
Description: GANFET N-CH 100V DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 17350 Stücke:
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1000+6.1 EUR
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EPC2218 EPC2218_datasheet.pdf?ver=C-R46UeqE-iEjg6gr7hUEg%3d%3d
Hersteller: EPC
Produkt ist nicht verfügbar
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EPC2218 EPC2218_datasheet.pdf?ver=C-R46UeqE-iEjg6gr7hUEg%3d%3d
EPC2218
Hersteller: EPC
Description: GANFET N-CH 100V DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 17531 Stücke:
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2+15.57 EUR
10+10.54 EUR
50+8.39 EUR
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EPC2218A EPC2218A_datasheet.pdf
EPC2218A
Hersteller: EPC
Description: TRANS GAN 80V .0032OHM AECQ101
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 25058 Stücke:
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AnzahlPrivatkunde
2+12.23 EUR
10+8.21 EUR
50+6.49 EUR
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EPC2218A EPC2218A_datasheet.pdf
EPC2218A
Hersteller: EPC
Description: TRANS GAN 80V .0032OHM AECQ101
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 25000 Stücke:
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1000+4.91 EUR
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EPC2218A EPC2218A_datasheet.pdf
EPC2218A
Hersteller: EPC
GaN FETs EPC eGaN FET,80 V, 3.2 milliohm at 5 V, LGA 3.5 x 1.95
auf Bestellung 4984 Stücke:
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10+6 EUR
100+5.49 EUR
500+5.09 EUR
1000+4.11 EUR
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EPC2219 EPC2219_datasheet.pdf
EPC2219
Hersteller: EPC
Description: TRANS GAN 65V AECQ101 3.3OHM DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
2500+1.12 EUR
5000+1.07 EUR
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EPC2219 EPC2219_datasheet.pdf
EPC2219
Hersteller: EPC
Description: TRANS GAN 65V AECQ101 3.3OHM DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V
auf Bestellung 7999 Stücke:
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AnzahlPrivatkunde
8+2.7 EUR
10+2.21 EUR
100+1.73 EUR
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EPC2221 epc2221_datasheet.pdf
EPC2221
Hersteller: EPC
Description: GANFET 2N-CH 100V 5A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5A
Supplier Device Package: Die
Part Status: Active
auf Bestellung 4109 Stücke:
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AnzahlPrivatkunde
4+6.64 EUR
10+4.34 EUR
100+3.03 EUR
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EPC2221 epc2221_datasheet.pdf
EPC2221
Hersteller: EPC
Description: GANFET 2N-CH 100V 5A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5A
Supplier Device Package: Die
Part Status: Active
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
2500+2.17 EUR
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EPC2221 epc2221_datasheet.pdf
EPC2221
Hersteller: EPC
GaN FETs EPC AEC eGaN Dual FET,100 V, 58 milliohm at 5 V, BGA 1.35 x 1.35
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+6.26 EUR
10+3.26 EUR
100+2.93 EUR
500+2.4 EUR
1000+2.33 EUR
2500+2.01 EUR
5000+1.92 EUR
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EPC2234 EPC2234_datasheet.pdf
EPC2234
Hersteller: EPC
Description: TRANS GAN AEC 160V .008OHM 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 24-BGA (4.6x2.6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 160 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
500+12.39 EUR
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EPC2234 EPC2234_datasheet.pdf
EPC2234
Hersteller: EPC
GaN FETs EPC eGaN FET,160 V, 8 milliohm at 5 V, BGA 4.6 x 2.6
auf Bestellung 457 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.61 EUR
10+13.23 EUR
500+10.79 EUR
1000+10.69 EUR
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EPC2234 EPC2234_datasheet.pdf
EPC2234
Hersteller: EPC
Description: TRANS GAN AEC 160V .008OHM 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 24-BGA (4.6x2.6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 160 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 3547 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+26.7 EUR
10+18.62 EUR
50+15.18 EUR
100+15.16 EUR
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EPC2252 EPC2252_datasheet.pdf
EPC2252
Hersteller: EPC
GaN FETs eGaN FET, 80V, 11milliohm at 5 V, 1.5 x 1.5mm BGA
auf Bestellung 10531 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+4.41 EUR
10+2.2 EUR
100+1.98 EUR
500+1.58 EUR
1000+1.52 EUR
2500+1.32 EUR
5000+1.25 EUR
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EPC2252 EPC2252_datasheet.pdf
EPC2252
Hersteller: EPC
Description: TRANSGAN 80V.011OHM AECQ101 9BGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 576 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.51 EUR
7500+1.38 EUR
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EPC2252 EPC2252_datasheet.pdf
EPC2252
Hersteller: EPC
Description: TRANSGAN 80V.011OHM AECQ101 9BGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 576 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 47158 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.09 EUR
10+3.28 EUR
50+2.5 EUR
100+2.25 EUR
500+1.81 EUR
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EPC2302 epc2302_datasheet.pdf
EPC2302
Hersteller: EPC
Description: TRANS GAN 100V DIE .0018OHM
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 29700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+6.75 EUR
Mindestbestellmenge: 3000 Stücke
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EPC2302 epc2302_datasheet.pdf
EPC2302
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 1.8 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 1097 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+13.76 EUR
10+9.35 EUR
100+6.85 EUR
500+6.75 EUR
1000+6.19 EUR
3000+5.78 EUR
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EPC2302 epc2302_datasheet.pdf
EPC2302
Hersteller: EPC
Description: TRANS GAN 100V DIE .0018OHM
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 29834 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.71 EUR
10+11.38 EUR
50+9.08 EUR
100+8.34 EUR
500+8.2 EUR
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EPC2302 epc2302_datasheet.pdf
Hersteller: EPC
N-Channel 100 V 101A (Ta) Surface Mount 7-QFN (3x5) Транзистори
Produkt ist nicht verfügbar
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EPC2302ENGRT epc2302_datasheet.pdf
EPC2302ENGRT
Hersteller: EPC
Description: TRANS GAN 100V DIE .0018OHM
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Produkt ist nicht verfügbar
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EPC2304 EPC2304_datasheet.pdf
EPC2304
Hersteller: EPC
GaN FETs EPC eGaN FET, 200 V, 5 milliohm at 5 V, 3 mm x 5 mm FCQFN
auf Bestellung 6130 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+14.51 EUR
10+7.93 EUR
100+7.28 EUR
500+7.25 EUR
1000+6.64 EUR
3000+6.15 EUR
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EPC2304 EPC2304_datasheet.pdf
EPC2304
Hersteller: EPC
Description: TRANS GAN 200V .005OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+7.16 EUR
Mindestbestellmenge: 3000 Stücke
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EPC2304 EPC2304_datasheet.pdf
EPC2304
Hersteller: EPC
Description: TRANS GAN 200V .005OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
auf Bestellung 46007 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.56 EUR
10+11.29 EUR
50+9.04 EUR
100+8.32 EUR
500+8.27 EUR
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EPC2304 EPC2304_datasheet.pdf
Hersteller: EPC
TRANS GAN 200V .005OHM 7QFN Транзистори
Produkt ist nicht verfügbar
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EPC2304ENGRT EPC2304_datasheet.pdf
EPC2304ENGRT
Hersteller: EPC
Description: TRANS GAN 200V .005OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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EPC2304ENGRT EPC2304_datasheet.pdf
EPC2304ENGRT
Hersteller: EPC
Description: TRANS GAN 200V .005OHM 3X5PQFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
Produkt ist nicht verfügbar
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EPC2305 EPC2305_datasheet.pdf
EPC2305
Hersteller: EPC
Description: TRANS GAN 150V .0022OHM 3X5 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+6.39 EUR
Mindestbestellmenge: 3000 Stücke
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EPC2305 EPC2305_datasheet.pdf
EPC2305
Hersteller: EPC
Description: TRANS GAN 150V .0022OHM 3X5 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
auf Bestellung 35176 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.79 EUR
10+10.76 EUR
50+8.6 EUR
100+7.91 EUR
500+7.82 EUR
Mindestbestellmenge: 2 Stücke
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EPC2305 EPC2305_datasheet.pdf
EPC2305
Hersteller: EPC
GaN FETs EPC eGaN FET,150 V, 2.2 milliohm typ at 5 V, QFN 3 x 5mm
auf Bestellung 14040 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+14.13 EUR
10+7.7 EUR
100+7.08 EUR
500+7.01 EUR
1000+6.41 EUR
3000+5.95 EUR
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EPC2305ENGRT EPC2305_datasheet.pdf
EPC2305ENGRT
Hersteller: EPC
Description: TRANS GAN 150V .003OHM 3X5MM QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
Produkt ist nicht verfügbar
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EPC2305ENGRT EPC2305_datasheet.pdf
EPC2305ENGRT
Hersteller: EPC
Description: TRANS GAN 150V .003OHM 3X5MM QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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EPC2306 epc2306_datasheet.pdf
EPC2306
Hersteller: EPC
Description: TRANS GAN 100V .0038OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+3.45 EUR
Mindestbestellmenge: 3000 Stücke
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EPC2306 epc2306_datasheet.pdf
EPC2306
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 3.1 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 11028 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+8.75 EUR
10+4.55 EUR
100+4.15 EUR
500+3.69 EUR
1000+3.56 EUR
3000+3.26 EUR
6000+3.13 EUR
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EPC2306 epc2306_datasheet.pdf
EPC2306
Hersteller: EPC
Description: TRANS GAN 100V .0038OHM 3X5PQFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
auf Bestellung 16891 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.03 EUR
10+6.65 EUR
50+5.21 EUR
100+4.75 EUR
500+4.22 EUR
Mindestbestellmenge: 3 Stücke
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EPC2306ENGRT epc2306_datasheet.pdf
EPC2306ENGRT
Hersteller: EPC
Description: TRANS GAN 100V .0038OHM3X5MM QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
Produkt ist nicht verfügbar
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EPC2306ENGRT epc2306_datasheet.pdf
EPC2306ENGRT
Hersteller: EPC
Description: TRANS GAN 100V .0038OHM3X5MM QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
auf Bestellung 375 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.58 EUR
10+7.78 EUR
100+5.65 EUR
Mindestbestellmenge: 2 Stücke
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EPC2307 EPC2307_datasheet.pdf
EPC2307
Hersteller: EPC
Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
Produkt ist nicht verfügbar
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EPC2307 EPC2307_datasheet.pdf
EPC2307
Hersteller: EPC
GaN FETs EPC eGaN FET,200 V, 10 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 13674 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+8.75 EUR
10+4.55 EUR
100+4.15 EUR
500+3.69 EUR
1000+3.56 EUR
3000+3.26 EUR
6000+3.13 EUR
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EPC2307 EPC2307_datasheet.pdf
EPC2307
Hersteller: EPC
Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
auf Bestellung 725 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.03 EUR
10+6.65 EUR
50+5.21 EUR
100+4.75 EUR
500+4.22 EUR
Mindestbestellmenge: 3 Stücke
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EPC2307ENGRT EPC2307_datasheet.pdf?ver=fMAB7MZgiHweLm5wyKPLlg%3d%3d
EPC2307ENGRT
Hersteller: EPC
Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+5.56 EUR
Mindestbestellmenge: 3000 Stücke
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EPC2307ENGRT EPC2307_datasheet.pdf?ver=fMAB7MZgiHweLm5wyKPLlg%3d%3d
EPC2307ENGRT
Hersteller: EPC
Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
auf Bestellung 17984 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.2 EUR
10+9.63 EUR
100+7.03 EUR
500+6.81 EUR
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EPC2308 EPC2308_datasheet.pdf
EPC2308
Hersteller: EPC
Description: TRANS GAN 150V .006OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+3.56 EUR
Mindestbestellmenge: 3000 Stücke
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EPC2308 EPC2308_datasheet.pdf
EPC2308
Hersteller: EPC
Description: TRANS GAN 150V .006OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
auf Bestellung 4351 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.26 EUR
10+6.83 EUR
50+5.36 EUR
100+4.88 EUR
500+4.36 EUR
Mindestbestellmenge: 3 Stücke
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EPC2308 EPC2308_datasheet.pdf
EPC2308
Hersteller: EPC
GaN FETs EPC eGaN FET,150 V, 6 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 5807 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+8.95 EUR
10+4.66 EUR
100+4.27 EUR
500+3.82 EUR
1000+3.68 EUR
3000+3.38 EUR
6000+3.22 EUR
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EPC2308ENGRT EPC2308_datasheet.pdf
EPC2308ENGRT
Hersteller: EPC
Description: TRANS GAN 150V .006OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+4.83 EUR
Mindestbestellmenge: 3000 Stücke
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EPC2308ENGRT EPC2308_datasheet.pdf
EPC2308ENGRT
Hersteller: EPC
Description: TRANS GAN 150V .006OHM 3X5PQFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
auf Bestellung 43995 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.88 EUR
10+8.66 EUR
50+6.85 EUR
100+6.27 EUR
500+5.9 EUR
Mindestbestellmenge: 2 Stücke
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EPC23101
Hersteller: EPC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC23101ENGRT EPC23101_datasheet.pdf
EPC23101ENGRT
Hersteller: EPC
Description: TRANS GAN 100V EPOWER STAGE
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 3.3mOhm
Applications: General Purpose
Current - Output / Channel: 65A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 14-QFN (3.5x5)
Fault Protection: ESD, UVLO
Load Type: Inductive, Capacitive, Resistive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+8.69 EUR
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EPC23101ENGRT EPC23101_datasheet.pdf
EPC23101ENGRT
Hersteller: EPC
Description: TRANS GAN 100V EPOWER STAGE
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 3.3mOhm
Applications: General Purpose
Current - Output / Channel: 65A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 14-QFN (3.5x5)
Fault Protection: ESD, UVLO
Load Type: Inductive, Capacitive, Resistive
auf Bestellung 4291 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.05 EUR
10+11.66 EUR
25+10.82 EUR
100+9.89 EUR
250+9.65 EUR
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EPC23102 PdfFile_212927.pdf
EPC23102
Hersteller: EPC
Gate Drivers Integrated Circuits 100 V ePower stage in FCQFN
auf Bestellung 6929 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+13.73 EUR
10+10.66 EUR
25+9.9 EUR
100+9.04 EUR
250+8.65 EUR
500+8.4 EUR
1000+8.19 EUR
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EPC23102 PdfFile_212927.pdf
EPC23102
Hersteller: EPC
Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 6.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 35A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Load Type: Inductive, Capacitive, Resistive
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+9.1 EUR
Mindestbestellmenge: 3000 Stücke
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EPC23102 PdfFile_212927.pdf
EPC23102
Hersteller: EPC
Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 6.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 35A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Load Type: Inductive, Capacitive, Resistive
auf Bestellung 7275 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.76 EUR
10+12.22 EUR
25+11.33 EUR
100+10.36 EUR
250+10.13 EUR
Mindestbestellmenge: 2 Stücke
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EPC23102ENGRT EPC23102_datasheet.pdf
EPC23102ENGRT
Hersteller: EPC
Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 5.2mOhm LS, 5.2mOhm HS
Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
Current - Output / Channel: 35A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: Current Limiting, ESD, Over Voltage, UVLO
Load Type: Inductive, Capacitive, Resistive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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