| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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EPC2302 | EPC |
GaN FETs EPC eGaN FET,100 V, 1.8 milliohm at 5 V, 3 mm x 5 mm QFN |
auf Bestellung 16192 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2302 | EPC |
Description: TRANS GAN 100V DIE .0018OHMPackaging: Tape & Reel (TR) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 101A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V Vgs(th) (Max) @ Id: 2.5V @ 14mA Supplier Device Package: 7-QFN (3x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
auf Bestellung 131000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2302ENGRT | EPC |
Description: TRANS GAN 100V DIE .0018OHMPackaging: Tape & Reel (TR) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 101A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V Vgs(th) (Max) @ Id: 2.5V @ 14mA Supplier Device Package: 7-QFN (3x5) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2304 | EPC |
Description: TRANS GAN 200V .005OHM 7QFNPackaging: Cut Tape (CT) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 102A (Ta) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V Vgs(th) (Max) @ Id: 2.5V @ 8mA Supplier Device Package: 7-QFN (3x5) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V |
auf Bestellung 22727 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2304 | EPC |
Description: TRANS GAN 200V .005OHM 7QFNPackaging: Tape & Reel (TR) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 102A (Ta) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V Vgs(th) (Max) @ Id: 2.5V @ 8mA Supplier Device Package: 7-QFN (3x5) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2304 | EPC |
GaN FETs EPC eGaN FET, 200 V, 5 milliohm at 5 V, 3 mm x 5 mm FCQFN |
auf Bestellung 14070 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2304ENGRT | EPC |
Description: TRANS GAN 200V .005OHM 3X5PQFNPackaging: Tape & Reel (TR) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 102A (Ta) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V Vgs(th) (Max) @ Id: 2.5V @ 8mA Supplier Device Package: 7-QFN (3x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2304ENGRT | EPC |
Description: TRANS GAN 200V .005OHM 3X5PQFNPackaging: Cut Tape (CT) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 102A (Ta) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V Vgs(th) (Max) @ Id: 2.5V @ 8mA Supplier Device Package: 7-QFN (3x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2305 | EPC |
Description: TRANS GAN 150V .0022OHM 3X5 7QFNPackaging: Cut Tape (CT) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 102A (Tj) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 11mA Supplier Device Package: 7-QFN (3x5) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V |
auf Bestellung 25158 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2305 | EPC |
GaN FETs EPC eGaN FET,150 V, 2.2 milliohm typ at 5 V, QFN 3 x 5mm |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2305 | EPC |
Description: TRANS GAN 150V .0022OHM 3X5 7QFNPackaging: Tape & Reel (TR) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 102A (Tj) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 11mA Supplier Device Package: 7-QFN (3x5) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2305ENGRT | EPC |
Description: TRANS GAN 150V .003OHM 3X5MM QFNPackaging: Tape & Reel (TR) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 102A (Tj) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 11mA Supplier Device Package: 7-QFN (3x5) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2305ENGRT | EPC |
Description: TRANS GAN 150V .003OHM 3X5MM QFNPackaging: Cut Tape (CT) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 102A (Tj) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 11mA Supplier Device Package: 7-QFN (3x5) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2306 | EPC |
Description: TRANS GAN 100V .0038OHM 3X5PQFNPackaging: Tape & Reel (TR) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: 7-QFN (3x5) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2306 | EPC |
Description: TRANS GAN 100V .0038OHM 3X5PQFNPackaging: Cut Tape (CT) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: 7-QFN (3x5) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V |
auf Bestellung 16952 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2306 | EPC |
GaN FETs EPC eGaN FET,100 V, 3.1 milliohm at 5 V, 3 mm x 5 mm QFN |
auf Bestellung 14025 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2306ENGRT | EPC |
Description: TRANS GAN 100V .0038OHM3X5MM QFNPackaging: Tape & Reel (TR) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: 7-QFN (3x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2306ENGRT | EPC |
Description: TRANS GAN 100V .0038OHM3X5MM QFNPackaging: Cut Tape (CT) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: 7-QFN (3x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V |
auf Bestellung 380 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2307 | EPC |
GaN FETs EPC eGaN FET,200 V, 10 milliohm at 5 V, 3 mm x 5 mm QFN |
auf Bestellung 5256 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2307 | EPC |
Description: TRANS GAN 200V .010OHM 7QFNPackaging: Cut Tape (CT) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA Supplier Device Package: 7-QFN (3x5) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V |
auf Bestellung 6249 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2307 | EPC |
Description: TRANS GAN 200V .010OHM 7QFNPackaging: Tape & Reel (TR) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA Supplier Device Package: 7-QFN (3x5) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2307ENGRT | EPC |
Description: TRANS GAN 200V .010OHM 7QFNPackaging: Tape & Reel (TR) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.5V @ 4mA Supplier Device Package: 7-QFN (3x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2307ENGRT | EPC |
Description: TRANS GAN 200V .010OHM 7QFNPackaging: Cut Tape (CT) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.5V @ 4mA Supplier Device Package: 7-QFN (3x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V |
auf Bestellung 17984 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2308 | EPC |
Description: TRANS GAN 150V .006OHM 7QFNPackaging: Tape & Reel (TR) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Supplier Device Package: 7-QFN (3x5) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2308 | EPC |
GaN FETs EPC eGaN FET,150 V, 6 milliohm at 5 V, 3 mm x 5 mm QFN |
auf Bestellung 5541 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2308 | EPC |
Description: TRANS GAN 150V .006OHM 7QFNPackaging: Cut Tape (CT) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Supplier Device Package: 7-QFN (3x5) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V |
auf Bestellung 5756 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2308ENGRT | EPC |
Description: TRANS GAN 150V .006OHM 3X5PQFNPackaging: Cut Tape (CT) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Supplier Device Package: 7-QFN (3x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V |
auf Bestellung 45753 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2308ENGRT | EPC |
Description: TRANS GAN 150V .006OHM 3X5PQFNPackaging: Tape & Reel (TR) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Supplier Device Package: 7-QFN (3x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V |
auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC23101ENGRT | EPC |
Description: TRANS GAN 100V EPOWER STAGEFeatures: Bootstrap Circuit, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 14-PowerWFQFN Mounting Type: Surface Mount, Wettable Flank Interface: Logic Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 10V ~ 80V Rds On (Typ): 3.3mOhm Applications: General Purpose Current - Output / Channel: 65A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 10V ~ 80V Supplier Device Package: 14-QFN (3.5x5) Fault Protection: ESD, UVLO Load Type: Inductive, Capacitive, Resistive |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC23101ENGRT | EPC |
Description: TRANS GAN 100V EPOWER STAGEFeatures: Bootstrap Circuit, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 14-PowerWFQFN Mounting Type: Surface Mount, Wettable Flank Interface: Logic Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 10V ~ 80V Rds On (Typ): 3.3mOhm Applications: General Purpose Current - Output / Channel: 65A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 10V ~ 80V Supplier Device Package: 14-QFN (3.5x5) Fault Protection: ESD, UVLO Load Type: Inductive, Capacitive, Resistive |
auf Bestellung 4695 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC23102 | EPC |
Description: IC HALF BRIDGE DRIVER 35A 13WQFNPackaging: Cut Tape (CT) Features: Bootstrap Circuit Package / Case: 13-PowerWFQFN Mounting Type: Surface Mount, Wettable Flank Interface: PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 10V ~ 80V Rds On (Typ): 6.6mOhm LS + HS Applications: DC Motors, DC-DC Converters Current - Output / Channel: 35A Technology: MOSFET (Metal Oxide) Voltage - Load: 10V ~ 80V Supplier Device Package: 13-WQFN-HR (3.5x5) Load Type: Inductive, Capacitive, Resistive |
auf Bestellung 8113 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC23102 | EPC |
Gate Drivers Integrated Circuits 100 V ePower stage in FCQFN |
auf Bestellung 3677 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC23102 | EPC |
Description: IC HALF BRIDGE DRIVER 35A 13WQFNPackaging: Tape & Reel (TR) Features: Bootstrap Circuit Package / Case: 13-PowerWFQFN Mounting Type: Surface Mount, Wettable Flank Interface: PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 10V ~ 80V Rds On (Typ): 6.6mOhm LS + HS Applications: DC Motors, DC-DC Converters Current - Output / Channel: 35A Technology: MOSFET (Metal Oxide) Voltage - Load: 10V ~ 80V Supplier Device Package: 13-WQFN-HR (3.5x5) Load Type: Inductive, Capacitive, Resistive |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC23102ENGRT | EPC |
Description: IC HALF BRIDGE DRIVER 35A 13WQFNFeatures: Bootstrap Circuit Packaging: Tape & Reel (TR) Package / Case: 13-PowerWFQFN Mounting Type: Surface Mount, Wettable Flank Interface: Logic, PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 5.2mOhm LS, 5.2mOhm HS Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose Current - Output / Channel: 35A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 10V ~ 80V Supplier Device Package: 13-WQFN-HR (3.5x5) Fault Protection: Current Limiting, ESD, Over Voltage, UVLO Load Type: Inductive, Capacitive, Resistive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC23102ENGRT | EPC |
Description: IC HALF BRIDGE DRIVER 35A 13WQFNFeatures: Bootstrap Circuit Packaging: Cut Tape (CT) Package / Case: 13-PowerWFQFN Mounting Type: Surface Mount, Wettable Flank Interface: Logic, PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 5.2mOhm LS, 5.2mOhm HS Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose Current - Output / Channel: 35A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 10V ~ 80V Supplier Device Package: 13-WQFN-HR (3.5x5) Fault Protection: Current Limiting, ESD, Over Voltage, UVLO Load Type: Inductive, Capacitive, Resistive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC23103ENGRT | EPC |
Description: IC GAN EPOWER STAGE 100V 20AFeatures: Bootstrap Circuit, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 13-PowerWFQFN Mounting Type: Surface Mount, Wettable Flank Interface: Logic Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 10V ~ 80V Rds On (Typ): 7.6mOhm LS + HS Applications: DC Motors, DC-DC Converters Current - Output / Channel: 25A Current - Peak Output: 109A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 10V ~ 80V Supplier Device Package: 13-WQFN-HR (3.5x5) Fault Protection: ESD, Over Voltage, Short Circuit Load Type: Capacitive and Resistive |
auf Bestellung 482 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC23103ENGRT | EPC |
Description: IC GAN EPOWER STAGE 100V 20AFeatures: Bootstrap Circuit, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 13-PowerWFQFN Mounting Type: Surface Mount, Wettable Flank Interface: Logic Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 10V ~ 80V Rds On (Typ): 7.6mOhm LS + HS Applications: DC Motors, DC-DC Converters Current - Output / Channel: 25A Current - Peak Output: 109A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 10V ~ 80V Supplier Device Package: 13-WQFN-HR (3.5x5) Fault Protection: ESD, Over Voltage, Short Circuit Load Type: Capacitive and Resistive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| EPC23104 | EPC |
Description: IC GAN EPWR STAGE 100V 10A 13QFN Features: Bootstrap Circuit, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 13-PowerWFQFN Mounting Type: Surface Mount, Wettable Flank Interface: Logic Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 10V ~ 80V Rds On (Typ): 7.6mOhm LS + HS Applications: DC Motors, DC-DC Converters Current - Output / Channel: 15A Current - Peak Output: 78A Technology: NMOS Voltage - Load: 10V ~ 80V Supplier Device Package: 13-WQFN-HR (3.5x5) Fault Protection: ESD, Over Voltage, Short Circuit Load Type: Capacitive and Resistive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| EPC23104 | EPC |
Description: IC GAN EPWR STAGE 100V 10A 13QFN Features: Bootstrap Circuit, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 13-PowerWFQFN Mounting Type: Surface Mount, Wettable Flank Interface: Logic Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 10V ~ 80V Rds On (Typ): 7.6mOhm LS + HS Applications: DC Motors, DC-DC Converters Current - Output / Channel: 15A Current - Peak Output: 78A Technology: NMOS Voltage - Load: 10V ~ 80V Supplier Device Package: 13-WQFN-HR (3.5x5) Fault Protection: ESD, Over Voltage, Short Circuit Load Type: Capacitive and Resistive |
auf Bestellung 1648 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC23104ENGRT | EPC |
Description: IC HALF BRIDGE DRIVER 15A 13WQFNFeatures: Bootstrap Circuit, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 13-PowerWFQFN Mounting Type: Surface Mount, Wettable Flank Interface: Logic Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 10V ~ 80V Rds On (Typ): 7.6mOhm LS + HS Applications: DC Motors, DC-DC Converters Current - Output / Channel: 15A Current - Peak Output: 78A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 10V ~ 80V Supplier Device Package: 13-WQFN-HR (3.5x5) Fault Protection: ESD, Over Voltage, Short Circuit Load Type: Capacitive and Resistive |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC23104ENGRT | EPC |
Description: IC HALF BRIDGE DRIVER 15A 13WQFNFeatures: Bootstrap Circuit, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 13-PowerWFQFN Mounting Type: Surface Mount, Wettable Flank Interface: Logic Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 10V ~ 80V Rds On (Typ): 7.6mOhm LS + HS Applications: DC Motors, DC-DC Converters Current - Output / Channel: 15A Current - Peak Output: 78A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 10V ~ 80V Supplier Device Package: 13-WQFN-HR (3.5x5) Fault Protection: ESD, Over Voltage, Short Circuit Load Type: Capacitive and Resistive |
auf Bestellung 22887 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2361 | EPC |
Description: TRANS GAN 100V DIE,1 MOHM, 7PINQPackaging: Cut Tape (CT) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 101A (Ta) Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V Vgs(th) (Max) @ Id: 2.5V @ 15mA Supplier Device Package: 7-QFN (3x5) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V |
auf Bestellung 45346 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2361 | EPC |
Description: TRANS GAN 100V DIE,1 MOHM, 7PINQPackaging: Tape & Reel (TR) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 101A (Ta) Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V Vgs(th) (Max) @ Id: 2.5V @ 15mA Supplier Device Package: 7-QFN (3x5) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2361ENGRT | EPC |
Description: TRANS GAN 100V .001OHM 7QFNPackaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2361ENGRT | EPC |
Description: TRANS GAN 100V .001OHM 7QFNPackaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| EPC2366ENGRT | EPC |
Description: TRANS GAN 40V DIE,0.8 MOHM,5PINQPackaging: Tape & Reel (TR) Package / Case: 5-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 88A Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 12mA Supplier Device Package: 5-QFN (3.3x2.6) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| EPC2366ENGRT | EPC |
Description: TRANS GAN 40V DIE,0.8 MOHM,5PINQPackaging: Cut Tape (CT) Package / Case: 5-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 88A Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 12mA Supplier Device Package: 5-QFN (3.3x2.6) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V |
auf Bestellung 443 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2367 | EPC |
Description: TRANS GAN 100V DIE,1.5 MOHM, 5PIPackaging: Tape & Reel (TR) Package / Case: 5-PowerWQFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tj) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 10mA Supplier Device Package: 5-QFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V |
auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2367 | EPC |
Description: TRANS GAN 100V DIE,1.5 MOHM, 5PIPackaging: Cut Tape (CT) Package / Case: 5-PowerWQFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tj) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 10mA Supplier Device Package: 5-QFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V |
auf Bestellung 36191 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2367 | EPC |
GaN FETs EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN |
auf Bestellung 13929 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2619 | EPC |
GaN FETs EPC eGaN FET,100 V, 3.3 milliohm typ at 5 V, LGA 2.5 x 1.5 |
auf Bestellung 1399 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2619 | EPC |
Description: TRANS GAN 100V .0042 OHM 6LGAPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2619 | EPC |
Description: TRANS GAN 100V .0042 OHM 6LGAPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V |
auf Bestellung 7662 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2619ENGRT | EPC |
Description: TRANS GAN 80V .0033OHM 6LGAPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2619ENGRT | EPC |
Description: TRANS GAN 80V .0033OHM 6LGAPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2801 | EPC |
Description: TRANS GAN 100V 25A BUMPED DIE |
auf Bestellung 354 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2801 | EPC |
Description: TRANS GAN 100V 25A BUMPED DIE |
auf Bestellung 354 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2801 | EPC |
Description: TRANS GAN 100V 25A BUMPED DIE |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2815 | EPC |
Description: TRANS GAN 40V 33A BUMPED DIE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2815 | EPC |
Description: TRANS GAN 40V 33A BUMPED DIE |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| EPC2302 |
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Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 1.8 milliohm at 5 V, 3 mm x 5 mm QFN
GaN FETs EPC eGaN FET,100 V, 1.8 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 16192 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 11.95 EUR |
| 10+ | 8.27 EUR |
| 100+ | 6.37 EUR |
| 1000+ | 6 EUR |
| 3000+ | 5.56 EUR |
| EPC2302 |
![]() |
Hersteller: EPC
Description: TRANS GAN 100V DIE .0018OHM
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Description: TRANS GAN 100V DIE .0018OHM
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 131000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 5.49 EUR |
| EPC2302ENGRT |
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Hersteller: EPC
Description: TRANS GAN 100V DIE .0018OHM
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Description: TRANS GAN 100V DIE .0018OHM
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2304 |
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Hersteller: EPC
Description: TRANS GAN 200V .005OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
Description: TRANS GAN 200V .005OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
auf Bestellung 22727 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.53 EUR |
| 10+ | 9.23 EUR |
| 100+ | 6.79 EUR |
| 500+ | 6.75 EUR |
| EPC2304 |
![]() |
Hersteller: EPC
Description: TRANS GAN 200V .005OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
Description: TRANS GAN 200V .005OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 5.52 EUR |
| EPC2304 |
![]() |
Hersteller: EPC
GaN FETs EPC eGaN FET, 200 V, 5 milliohm at 5 V, 3 mm x 5 mm FCQFN
GaN FETs EPC eGaN FET, 200 V, 5 milliohm at 5 V, 3 mm x 5 mm FCQFN
auf Bestellung 14070 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 12.71 EUR |
| 10+ | 8.73 EUR |
| 100+ | 6.85 EUR |
| 1000+ | 6.44 EUR |
| 3000+ | 5.81 EUR |
| EPC2304ENGRT |
![]() |
Hersteller: EPC
Description: TRANS GAN 200V .005OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
Description: TRANS GAN 200V .005OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2304ENGRT |
![]() |
Hersteller: EPC
Description: TRANS GAN 200V .005OHM 3X5PQFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
Description: TRANS GAN 200V .005OHM 3X5PQFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2305 |
![]() |
Hersteller: EPC
Description: TRANS GAN 150V .0022OHM 3X5 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
Description: TRANS GAN 150V .0022OHM 3X5 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
auf Bestellung 25158 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.18 EUR |
| 10+ | 8.98 EUR |
| 100+ | 6.6 EUR |
| 500+ | 6.52 EUR |
| EPC2305 |
![]() |
Hersteller: EPC
GaN FETs EPC eGaN FET,150 V, 2.2 milliohm typ at 5 V, QFN 3 x 5mm
GaN FETs EPC eGaN FET,150 V, 2.2 milliohm typ at 5 V, QFN 3 x 5mm
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 12.34 EUR |
| 10+ | 8.48 EUR |
| 100+ | 6.62 EUR |
| 1000+ | 6.21 EUR |
| 3000+ | 5.61 EUR |
| EPC2305 |
![]() |
Hersteller: EPC
Description: TRANS GAN 150V .0022OHM 3X5 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
Description: TRANS GAN 150V .0022OHM 3X5 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 5.33 EUR |
| EPC2305ENGRT |
![]() |
Hersteller: EPC
Description: TRANS GAN 150V .003OHM 3X5MM QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
Description: TRANS GAN 150V .003OHM 3X5MM QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2305ENGRT |
![]() |
Hersteller: EPC
Description: TRANS GAN 150V .003OHM 3X5MM QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
Description: TRANS GAN 150V .003OHM 3X5MM QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2306 |
![]() |
Hersteller: EPC
Description: TRANS GAN 100V .0038OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
Description: TRANS GAN 100V .0038OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 2.8 EUR |
| EPC2306 |
![]() |
Hersteller: EPC
Description: TRANS GAN 100V .0038OHM 3X5PQFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
Description: TRANS GAN 100V .0038OHM 3X5PQFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
auf Bestellung 16952 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.15 EUR |
| 10+ | 5.41 EUR |
| 100+ | 3.86 EUR |
| 500+ | 3.43 EUR |
| EPC2306 |
![]() |
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 3.1 milliohm at 5 V, 3 mm x 5 mm QFN
GaN FETs EPC eGaN FET,100 V, 3.1 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 14025 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 7.69 EUR |
| 10+ | 5.12 EUR |
| 100+ | 3.66 EUR |
| 500+ | 3.48 EUR |
| 1000+ | 3.29 EUR |
| 3000+ | 2.96 EUR |
| EPC2306ENGRT |
![]() |
Hersteller: EPC
Description: TRANS GAN 100V .0038OHM3X5MM QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
Description: TRANS GAN 100V .0038OHM3X5MM QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2306ENGRT |
![]() |
Hersteller: EPC
Description: TRANS GAN 100V .0038OHM3X5MM QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
Description: TRANS GAN 100V .0038OHM3X5MM QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.43 EUR |
| 10+ | 6.34 EUR |
| 100+ | 4.61 EUR |
| EPC2307 |
![]() |
Hersteller: EPC
GaN FETs EPC eGaN FET,200 V, 10 milliohm at 5 V, 3 mm x 5 mm QFN
GaN FETs EPC eGaN FET,200 V, 10 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 5256 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 7.69 EUR |
| 10+ | 5.12 EUR |
| 100+ | 3.66 EUR |
| 500+ | 3.48 EUR |
| 1000+ | 3.29 EUR |
| 3000+ | 2.96 EUR |
| EPC2307 |
![]() |
Hersteller: EPC
Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
auf Bestellung 6249 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.15 EUR |
| 10+ | 5.41 EUR |
| 100+ | 3.86 EUR |
| 500+ | 3.43 EUR |
| EPC2307 |
![]() |
Hersteller: EPC
Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 2.8 EUR |
| EPC2307ENGRT |
![]() |
Hersteller: EPC
Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 4.67 EUR |
| EPC2307ENGRT |
![]() |
Hersteller: EPC
Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
auf Bestellung 17984 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 11.93 EUR |
| 10+ | 8.09 EUR |
| 100+ | 5.91 EUR |
| 500+ | 5.72 EUR |
| EPC2308 |
![]() |
Hersteller: EPC
Description: TRANS GAN 150V .006OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
Description: TRANS GAN 150V .006OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2308 |
![]() |
Hersteller: EPC
GaN FETs EPC eGaN FET,150 V, 6 milliohm at 5 V, 3 mm x 5 mm QFN
GaN FETs EPC eGaN FET,150 V, 6 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 5541 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 7.9 EUR |
| 10+ | 5.24 EUR |
| 100+ | 3.75 EUR |
| 500+ | 3.61 EUR |
| 1000+ | 3.41 EUR |
| 3000+ | 3.04 EUR |
| EPC2308 |
![]() |
Hersteller: EPC
Description: TRANS GAN 150V .006OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
Description: TRANS GAN 150V .006OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
auf Bestellung 5756 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.34 EUR |
| 10+ | 5.55 EUR |
| 100+ | 3.97 EUR |
| 500+ | 3.55 EUR |
| EPC2308ENGRT |
![]() |
Hersteller: EPC
Description: TRANS GAN 150V .006OHM 3X5PQFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
Description: TRANS GAN 150V .006OHM 3X5PQFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
auf Bestellung 45753 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 10.6 EUR |
| 10+ | 7.14 EUR |
| 100+ | 5.17 EUR |
| 500+ | 4.87 EUR |
| EPC2308ENGRT |
![]() |
Hersteller: EPC
Description: TRANS GAN 150V .006OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
Description: TRANS GAN 150V .006OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 3.98 EUR |
| EPC23101ENGRT |
![]() |
Hersteller: EPC
Description: TRANS GAN 100V EPOWER STAGE
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 3.3mOhm
Applications: General Purpose
Current - Output / Channel: 65A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 14-QFN (3.5x5)
Fault Protection: ESD, UVLO
Load Type: Inductive, Capacitive, Resistive
Description: TRANS GAN 100V EPOWER STAGE
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 3.3mOhm
Applications: General Purpose
Current - Output / Channel: 65A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 14-QFN (3.5x5)
Fault Protection: ESD, UVLO
Load Type: Inductive, Capacitive, Resistive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 6.98 EUR |
| EPC23101ENGRT |
![]() |
Hersteller: EPC
Description: TRANS GAN 100V EPOWER STAGE
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 3.3mOhm
Applications: General Purpose
Current - Output / Channel: 65A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 14-QFN (3.5x5)
Fault Protection: ESD, UVLO
Load Type: Inductive, Capacitive, Resistive
Description: TRANS GAN 100V EPOWER STAGE
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 3.3mOhm
Applications: General Purpose
Current - Output / Channel: 65A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 14-QFN (3.5x5)
Fault Protection: ESD, UVLO
Load Type: Inductive, Capacitive, Resistive
auf Bestellung 4695 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 12.11 EUR |
| 10+ | 9.38 EUR |
| 25+ | 8.7 EUR |
| 100+ | 7.95 EUR |
| 250+ | 7.6 EUR |
| 500+ | 7.38 EUR |
| 1000+ | 7.2 EUR |
| EPC23102 |
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Hersteller: EPC
Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 6.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 35A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Load Type: Inductive, Capacitive, Resistive
Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 6.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 35A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Load Type: Inductive, Capacitive, Resistive
auf Bestellung 8113 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 12.81 EUR |
| 10+ | 9.94 EUR |
| 25+ | 9.22 EUR |
| 100+ | 8.43 EUR |
| 250+ | 8.24 EUR |
| EPC23102 |
![]() |
Hersteller: EPC
Gate Drivers Integrated Circuits 100 V ePower stage in FCQFN
Gate Drivers Integrated Circuits 100 V ePower stage in FCQFN
auf Bestellung 3677 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 12.6 EUR |
| 10+ | 9.79 EUR |
| 25+ | 9.06 EUR |
| 100+ | 8.29 EUR |
| 250+ | 7.92 EUR |
| 500+ | 7.69 EUR |
| 1000+ | 7.52 EUR |
| EPC23102 |
![]() |
Hersteller: EPC
Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 6.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 35A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Load Type: Inductive, Capacitive, Resistive
Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 6.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 35A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Load Type: Inductive, Capacitive, Resistive
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 7.41 EUR |
| EPC23102ENGRT |
![]() |
Hersteller: EPC
Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 5.2mOhm LS, 5.2mOhm HS
Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
Current - Output / Channel: 35A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: Current Limiting, ESD, Over Voltage, UVLO
Load Type: Inductive, Capacitive, Resistive
Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 5.2mOhm LS, 5.2mOhm HS
Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
Current - Output / Channel: 35A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: Current Limiting, ESD, Over Voltage, UVLO
Load Type: Inductive, Capacitive, Resistive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC23102ENGRT |
![]() |
Hersteller: EPC
Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 5.2mOhm LS, 5.2mOhm HS
Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
Current - Output / Channel: 35A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: Current Limiting, ESD, Over Voltage, UVLO
Load Type: Inductive, Capacitive, Resistive
Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 5.2mOhm LS, 5.2mOhm HS
Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
Current - Output / Channel: 35A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: Current Limiting, ESD, Over Voltage, UVLO
Load Type: Inductive, Capacitive, Resistive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC23103ENGRT |
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Hersteller: EPC
Description: IC GAN EPOWER STAGE 100V 20A
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 25A
Current - Peak Output: 109A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
Description: IC GAN EPOWER STAGE 100V 20A
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 25A
Current - Peak Output: 109A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
auf Bestellung 482 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.43 EUR |
| 10+ | 8.52 EUR |
| 25+ | 8.12 EUR |
| 100+ | 7.05 EUR |
| 250+ | 6.74 EUR |
| EPC23103ENGRT |
![]() |
Hersteller: EPC
Description: IC GAN EPOWER STAGE 100V 20A
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 25A
Current - Peak Output: 109A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
Description: IC GAN EPOWER STAGE 100V 20A
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 25A
Current - Peak Output: 109A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC23104 |
Hersteller: EPC
Description: IC GAN EPWR STAGE 100V 10A 13QFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: NMOS
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
Description: IC GAN EPWR STAGE 100V 10A 13QFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: NMOS
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC23104 |
Hersteller: EPC
Description: IC GAN EPWR STAGE 100V 10A 13QFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: NMOS
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
Description: IC GAN EPWR STAGE 100V 10A 13QFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: NMOS
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
auf Bestellung 1648 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 7.53 EUR |
| 10+ | 5.74 EUR |
| 25+ | 5.29 EUR |
| 100+ | 4.8 EUR |
| 250+ | 4.58 EUR |
| EPC23104ENGRT |
![]() |
Hersteller: EPC
Description: IC HALF BRIDGE DRIVER 15A 13WQFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
Description: IC HALF BRIDGE DRIVER 15A 13WQFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 4.16 EUR |
| EPC23104ENGRT |
![]() |
Hersteller: EPC
Description: IC HALF BRIDGE DRIVER 15A 13WQFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
Description: IC HALF BRIDGE DRIVER 15A 13WQFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
auf Bestellung 22887 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 7.53 EUR |
| 10+ | 5.74 EUR |
| 25+ | 5.29 EUR |
| 100+ | 4.8 EUR |
| 250+ | 4.58 EUR |
| EPC2361 |
![]() |
Hersteller: EPC
Description: TRANS GAN 100V DIE,1 MOHM, 7PINQ
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V
Description: TRANS GAN 100V DIE,1 MOHM, 7PINQ
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V
auf Bestellung 45346 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.62 EUR |
| 10+ | 9.3 EUR |
| 100+ | 6.85 EUR |
| 500+ | 6.82 EUR |
| EPC2361 |
![]() |
Hersteller: EPC
Description: TRANS GAN 100V DIE,1 MOHM, 7PINQ
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V
Description: TRANS GAN 100V DIE,1 MOHM, 7PINQ
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 5.57 EUR |
| EPC2366ENGRT |
![]() |
Hersteller: EPC
Description: TRANS GAN 40V DIE,0.8 MOHM,5PINQ
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A
Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-QFN (3.3x2.6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V
Description: TRANS GAN 40V DIE,0.8 MOHM,5PINQ
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A
Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-QFN (3.3x2.6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2366ENGRT |
![]() |
Hersteller: EPC
Description: TRANS GAN 40V DIE,0.8 MOHM,5PINQ
Packaging: Cut Tape (CT)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A
Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-QFN (3.3x2.6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V
Description: TRANS GAN 40V DIE,0.8 MOHM,5PINQ
Packaging: Cut Tape (CT)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A
Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-QFN (3.3x2.6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V
auf Bestellung 443 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.62 EUR |
| 10+ | 4.36 EUR |
| 100+ | 3.08 EUR |
| EPC2367 |
![]() |
Hersteller: EPC
Description: TRANS GAN 100V DIE,1.5 MOHM, 5PI
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 5-QFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V
Description: TRANS GAN 100V DIE,1.5 MOHM, 5PI
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 5-QFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 4.26 EUR |
| EPC2367 |
![]() |
Hersteller: EPC
Description: TRANS GAN 100V DIE,1.5 MOHM, 5PI
Packaging: Cut Tape (CT)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 5-QFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V
Description: TRANS GAN 100V DIE,1.5 MOHM, 5PI
Packaging: Cut Tape (CT)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 5-QFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V
auf Bestellung 36191 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 11.16 EUR |
| 10+ | 7.53 EUR |
| 100+ | 5.48 EUR |
| 500+ | 5.21 EUR |
| EPC2367 |
![]() |
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN
GaN FETs EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN
auf Bestellung 13929 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 10.44 EUR |
| 10+ | 7.04 EUR |
| 100+ | 5.23 EUR |
| 1000+ | 4.93 EUR |
| 3000+ | 4.44 EUR |
| EPC2619 |
![]() |
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 3.3 milliohm typ at 5 V, LGA 2.5 x 1.5
GaN FETs EPC eGaN FET,100 V, 3.3 milliohm typ at 5 V, LGA 2.5 x 1.5
auf Bestellung 1399 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 6.93 EUR |
| 10+ | 4.58 EUR |
| 100+ | 3.26 EUR |
| 500+ | 3.01 EUR |
| 1000+ | 2.87 EUR |
| 2500+ | 2.57 EUR |
| EPC2619 |
![]() |
Hersteller: EPC
Description: TRANS GAN 100V .0042 OHM 6LGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
Description: TRANS GAN 100V .0042 OHM 6LGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 2.43 EUR |
| EPC2619 |
![]() |
Hersteller: EPC
Description: TRANS GAN 100V .0042 OHM 6LGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
Description: TRANS GAN 100V .0042 OHM 6LGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
auf Bestellung 7662 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 7.32 EUR |
| 10+ | 4.84 EUR |
| 100+ | 3.43 EUR |
| 500+ | 2.98 EUR |
| EPC2619ENGRT |
![]() |
Hersteller: EPC
Description: TRANS GAN 80V .0033OHM 6LGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
Description: TRANS GAN 80V .0033OHM 6LGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2619ENGRT |
![]() |
Hersteller: EPC
Description: TRANS GAN 80V .0033OHM 6LGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
Description: TRANS GAN 80V .0033OHM 6LGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2801 |
![]() |
Hersteller: EPC
Description: TRANS GAN 100V 25A BUMPED DIE
Description: TRANS GAN 100V 25A BUMPED DIE
auf Bestellung 354 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| EPC2801 |
![]() |
Hersteller: EPC
Description: TRANS GAN 100V 25A BUMPED DIE
Description: TRANS GAN 100V 25A BUMPED DIE
auf Bestellung 354 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| EPC2801 |
![]() |
Hersteller: EPC
Description: TRANS GAN 100V 25A BUMPED DIE
Description: TRANS GAN 100V 25A BUMPED DIE
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| EPC2815 |
![]() |
Hersteller: EPC
Description: TRANS GAN 40V 33A BUMPED DIE
Description: TRANS GAN 40V 33A BUMPED DIE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2815 |
![]() |
Hersteller: EPC
Description: TRANS GAN 40V 33A BUMPED DIE
Description: TRANS GAN 40V 33A BUMPED DIE
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH





























