Produkte > EPC > Alle Produkte des Herstellers EPC (696) > Seite 7 nach 12

Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11 12  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
EPC2221 EPC2221 EPC epc2221_datasheet.pdf Description: GANFET 2N-CH 100V 5A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5A
Supplier Device Package: Die
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.17 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2221 EPC2221 EPC epc2221_datasheet.pdf Description: GANFET 2N-CH 100V 5A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5A
Supplier Device Package: Die
Part Status: Active
auf Bestellung 4109 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.64 EUR
10+4.34 EUR
100+3.03 EUR
500+2.46 EUR
1000+2.28 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2234 EPC2234 EPC GaN FETs EPC eGaN FET,160 V, 8 milliohm at 5 V, BGA 4.6 x 2.6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2234 EPC2234 EPC Description: TRANS GAN AEC 160V .008OHM 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 24-BGA (4.6x2.6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 160 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
500+12.27 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2234 EPC2234 EPC Description: TRANS GAN AEC 160V .008OHM 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 24-BGA (4.6x2.6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 160 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 6530 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.72 EUR
10+17.24 EUR
100+13.03 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2252 EPC2252 EPC EPC2252_datasheet.pdf Description: TRANSGAN 80V.011OHM AECQ101 9BGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 576 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2252 EPC2252 EPC EPC2252_datasheet.pdf Description: TRANSGAN 80V.011OHM AECQ101 9BGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 576 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 412 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.93 EUR
10+3.19 EUR
100+2.18 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2252 EPC2252 EPC EPC2252_datasheet.pdf GaN FETs eGaN FET, 80V, 11milliohm at 5 V, 1.5 x 1.5mm BGA
auf Bestellung 12094 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.96 EUR
10+3.2 EUR
100+2.23 EUR
500+1.82 EUR
1000+1.69 EUR
2500+1.59 EUR
5000+1.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2302 EPC2302 EPC epc2302_datasheet.pdf Description: TRANS GAN 100V DIE .0018OHM
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+6.58 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2302 EPC2302 EPC epc2302_datasheet.pdf Description: TRANS GAN 100V DIE .0018OHM
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 93657 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.4 EUR
10+10.46 EUR
100+7.68 EUR
500+7.54 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2302 EPC2302 EPC epc2302_datasheet.pdf GaN FETs EPC eGaN FET,100 V, 1.8 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 16192 Stücke:
Lieferzeit 10-14 Tag (e)
1+14.22 EUR
10+9.84 EUR
100+7.58 EUR
1000+7.14 EUR
3000+6.62 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2302ENGRT EPC2302ENGRT EPC epc2302_datasheet.pdf Description: TRANS GAN 100V DIE .0018OHM
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2304 EPC2304 EPC EPC2304_datasheet.pdf Description: TRANS GAN 200V .005OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+6.62 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2304 EPC2304 EPC EPC2304_datasheet.pdf GaN FETs EPC eGaN FET, 200 V, 5 milliohm at 5 V, 3 mm x 5 mm FCQFN
auf Bestellung 14070 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.12 EUR
10+10.39 EUR
100+8.15 EUR
1000+7.66 EUR
3000+6.91 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2304 EPC2304 EPC EPC2304_datasheet.pdf Description: TRANS GAN 200V .005OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
auf Bestellung 24890 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.23 EUR
10+11.07 EUR
100+8.15 EUR
500+8.1 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2304ENGRT EPC2304ENGRT EPC EPC2304_datasheet.pdf Description: TRANS GAN 200V .005OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Supplier Device Package: 7-QFN (3x5)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2304ENGRT EPC2304ENGRT EPC EPC2304_datasheet.pdf Description: TRANS GAN 200V .005OHM 3X5PQFN
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Supplier Device Package: 7-QFN (3x5)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2305 EPC2305 EPC EPC2305_datasheet.pdf Description: TRANS GAN 150V .0022OHM 3X5 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2305 EPC2305 EPC EPC2305_datasheet.pdf Description: TRANS GAN 150V .0022OHM 3X5 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
auf Bestellung 2206 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.82 EUR
10+10.77 EUR
100+7.91 EUR
500+7.82 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2305 EPC2305 EPC EPC2305_datasheet.pdf GaN FETs EPC eGaN FET,150 V, 2.2 milliohm typ at 5 V, QFN 3 x 5mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2305ENGRT EPC2305ENGRT EPC EPC2305_datasheet.pdf Description: TRANS GAN 150V .003OHM 3X5MM QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2305ENGRT EPC2305ENGRT EPC EPC2305_datasheet.pdf Description: TRANS GAN 150V .003OHM 3X5MM QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2306 EPC2306 EPC epc2306_datasheet.pdf Description: TRANS GAN 100V .0038OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+3.37 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2306 EPC2306 EPC epc2306_datasheet.pdf Description: TRANS GAN 100V .0038OHM 3X5PQFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
auf Bestellung 10440 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.78 EUR
10+6.5 EUR
100+4.63 EUR
500+4.12 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2306 EPC2306 EPC epc2306_datasheet.pdf GaN FETs EPC eGaN FET,100 V, 3.1 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 14025 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.15 EUR
10+6.09 EUR
100+4.36 EUR
500+4.14 EUR
1000+3.92 EUR
3000+3.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2306ENGRT EPC2306ENGRT EPC epc2306_datasheet.pdf Description: TRANS GAN 100V .0038OHM3X5MM QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
auf Bestellung 375 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.33 EUR
10+7.6 EUR
100+5.52 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2306ENGRT EPC2306ENGRT EPC epc2306_datasheet.pdf Description: TRANS GAN 100V .0038OHM3X5MM QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2307 EPC2307 EPC EPC2307_datasheet.pdf GaN FETs EPC eGaN FET,200 V, 10 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 3887 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.82 EUR
10+6.51 EUR
100+4.66 EUR
500+4.14 EUR
1000+3.97 EUR
3000+3.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2307 EPC2307 EPC EPC2307_datasheet.pdf Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
auf Bestellung 1389 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.78 EUR
10+6.5 EUR
100+4.63 EUR
500+4.12 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2307 EPC2307 EPC EPC2307_datasheet.pdf Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2307ENGRT EPC2307ENGRT EPC EPC2307_datasheet.pdf?ver=fMAB7MZgiHweLm5wyKPLlg%3d%3d Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
auf Bestellung 17984 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.2 EUR
10+9.63 EUR
100+7.03 EUR
500+6.81 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2307ENGRT EPC2307ENGRT EPC EPC2307_datasheet.pdf?ver=fMAB7MZgiHweLm5wyKPLlg%3d%3d Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+5.56 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2308 EPC2308 EPC EPC2308_datasheet.pdf Description: TRANS GAN 150V .006OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2308 EPC2308 EPC EPC2308_datasheet.pdf GaN FETs EPC eGaN FET,150 V, 6 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 5541 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.4 EUR
10+6.24 EUR
100+4.46 EUR
500+4.3 EUR
1000+4.06 EUR
3000+3.62 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2308 EPC2308 EPC EPC2308_datasheet.pdf Description: TRANS GAN 150V .006OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
auf Bestellung 4491 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.01 EUR
10+6.66 EUR
100+4.76 EUR
500+4.26 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2308ENGRT EPC2308ENGRT EPC EPC2308_datasheet.pdf Description: TRANS GAN 150V .006OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+4.74 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2308ENGRT EPC2308ENGRT EPC EPC2308_datasheet.pdf Description: TRANS GAN 150V .006OHM 3X5PQFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
auf Bestellung 45753 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.61 EUR
10+8.5 EUR
100+6.15 EUR
500+5.8 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23101ENGRT EPC23101ENGRT EPC EPC23101_datasheet.pdf Description: TRANS GAN 100V EPOWER STAGE
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 3.3mOhm
Applications: General Purpose
Current - Output / Channel: 65A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 14-QFN (3.5x5)
Fault Protection: ESD, UVLO
Load Type: Inductive, Capacitive, Resistive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+8.31 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23101ENGRT EPC23101ENGRT EPC EPC23101_datasheet.pdf Description: TRANS GAN 100V EPOWER STAGE
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 3.3mOhm
Applications: General Purpose
Current - Output / Channel: 65A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 14-QFN (3.5x5)
Fault Protection: ESD, UVLO
Load Type: Inductive, Capacitive, Resistive
auf Bestellung 4695 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.41 EUR
10+11.16 EUR
25+10.35 EUR
100+9.46 EUR
250+9.04 EUR
500+8.78 EUR
1000+8.57 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23102 EPC23102 EPC PdfFile_212927.pdf Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 6.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 35A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Load Type: Inductive, Capacitive, Resistive
auf Bestellung 8113 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.24 EUR
10+11.83 EUR
25+10.97 EUR
100+10.03 EUR
250+9.81 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23102 EPC23102 EPC PdfFile_212927.pdf Gate Drivers Integrated Circuits 100 V ePower stage in FCQFN
auf Bestellung 3677 Stücke:
Lieferzeit 10-14 Tag (e)
1+14.99 EUR
10+11.65 EUR
25+10.78 EUR
100+9.87 EUR
250+9.42 EUR
500+9.15 EUR
1000+8.95 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC23102 EPC23102 EPC PdfFile_212927.pdf Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 6.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 35A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Load Type: Inductive, Capacitive, Resistive
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+8.82 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23102ENGRT EPC23102ENGRT EPC EPC23102_datasheet.pdf Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 5.2mOhm LS, 5.2mOhm HS
Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
Current - Output / Channel: 35A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: Current Limiting, ESD, Over Voltage, UVLO
Load Type: Inductive, Capacitive, Resistive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC23102ENGRT EPC23102ENGRT EPC EPC23102_datasheet.pdf Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 5.2mOhm LS, 5.2mOhm HS
Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
Current - Output / Channel: 35A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: Current Limiting, ESD, Over Voltage, UVLO
Load Type: Inductive, Capacitive, Resistive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23103ENGRT EPC23103ENGRT EPC EPC23103_datasheet.pdf Description: IC GAN EPOWER STAGE 100V 20A
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 25A
Current - Peak Output: 109A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23103ENGRT EPC23103ENGRT EPC EPC23103_datasheet.pdf Description: IC GAN EPOWER STAGE 100V 20A
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 25A
Current - Peak Output: 109A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
auf Bestellung 482 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.22 EUR
10+10.14 EUR
25+9.66 EUR
100+8.39 EUR
250+8.02 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23104 EPC Description: IC GAN EPWR STAGE 100V 10A 13QFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Slew Rate Controlled
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: NMOS
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
auf Bestellung 678 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.04 EUR
10+6.89 EUR
25+6.34 EUR
100+5.76 EUR
250+5.49 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23104 EPC Description: IC GAN EPWR STAGE 100V 10A 13QFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: NMOS
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23104ENGRT EPC23104ENGRT EPC EPC23104_datasheet.pdf Description: IC HALF BRIDGE DRIVER 15A 13WQFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+4.99 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23104ENGRT EPC23104ENGRT EPC EPC23104_datasheet.pdf Description: IC HALF BRIDGE DRIVER 15A 13WQFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
auf Bestellung 10850 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.04 EUR
10+6.89 EUR
25+6.34 EUR
100+5.76 EUR
250+5.49 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2361 EPC2361 EPC EPC2361_datasheet.pdf Description: TRANS GAN 100V DIE,1 MOHM, 7PINQ
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+6.69 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2361 EPC2361 EPC EPC2361_datasheet.pdf Description: TRANS GAN 100V DIE,1 MOHM, 7PINQ
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V
auf Bestellung 54237 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.34 EUR
10+11.16 EUR
100+8.22 EUR
500+8.18 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2361 EPC2361 EPC EPC2361_datasheet.pdf GaN FETs EPC eGaN FET,80 V, 1.0 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 7539 Stücke:
Lieferzeit 10-14 Tag (e)
1+16.4 EUR
10+11.21 EUR
100+8.27 EUR
500+8.21 EUR
1000+7.19 EUR
3000+6.97 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2361ENGRT EPC2361ENGRT EPC EPC2361_datasheet.pdf Description: TRANS GAN 100V .001OHM 7QFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2361ENGRT EPC2361ENGRT EPC EPC2361_datasheet.pdf Description: TRANS GAN 100V .001OHM 7QFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2366ENGRT EPC EPC2366_datasheet.pdf Description: TRANS GAN 40V DIE,0.8 MOHM,5PINQ
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A
Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-QFN (3.3x2.6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2366ENGRT EPC EPC2366_datasheet.pdf Description: TRANS GAN 40V DIE,0.8 MOHM,5PINQ
Packaging: Cut Tape (CT)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A
Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-QFN (3.3x2.6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V
auf Bestellung 443 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.88 EUR
10+5.19 EUR
100+3.67 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2367 EPC2367 EPC EPC2367_datasheet.pdf Description: TRANS GAN 100V DIE,1.5 MOHM, 5PI
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 5-QFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+5.07 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2367 EPC2367 EPC EPC2367_datasheet.pdf Description: TRANS GAN 100V DIE,1.5 MOHM, 5PI
Packaging: Cut Tape (CT)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 5-QFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V
auf Bestellung 36191 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.28 EUR
10+8.96 EUR
100+6.52 EUR
500+6.2 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2367 EPC2367 EPC EPC2367_datasheet.pdf GaN FETs EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN
auf Bestellung 5528 Stücke:
Lieferzeit 10-14 Tag (e)
1+13.28 EUR
10+8.96 EUR
100+6.51 EUR
500+6.22 EUR
1000+5.43 EUR
3000+5.28 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2221 epc2221_datasheet.pdf
EPC2221
Hersteller: EPC
Description: GANFET 2N-CH 100V 5A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5A
Supplier Device Package: Die
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.17 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2221 epc2221_datasheet.pdf
EPC2221
Hersteller: EPC
Description: GANFET 2N-CH 100V 5A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5A
Supplier Device Package: Die
Part Status: Active
auf Bestellung 4109 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.64 EUR
10+4.34 EUR
100+3.03 EUR
500+2.46 EUR
1000+2.28 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2234
EPC2234
Hersteller: EPC
GaN FETs EPC eGaN FET,160 V, 8 milliohm at 5 V, BGA 4.6 x 2.6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2234
EPC2234
Hersteller: EPC
Description: TRANS GAN AEC 160V .008OHM 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 24-BGA (4.6x2.6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 160 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
500+12.27 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2234
EPC2234
Hersteller: EPC
Description: TRANS GAN AEC 160V .008OHM 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 24-BGA (4.6x2.6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 160 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 6530 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.72 EUR
10+17.24 EUR
100+13.03 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2252 EPC2252_datasheet.pdf
EPC2252
Hersteller: EPC
Description: TRANSGAN 80V.011OHM AECQ101 9BGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 576 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2252 EPC2252_datasheet.pdf
EPC2252
Hersteller: EPC
Description: TRANSGAN 80V.011OHM AECQ101 9BGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 576 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 412 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.93 EUR
10+3.19 EUR
100+2.18 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2252 EPC2252_datasheet.pdf
EPC2252
Hersteller: EPC
GaN FETs eGaN FET, 80V, 11milliohm at 5 V, 1.5 x 1.5mm BGA
auf Bestellung 12094 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+4.96 EUR
10+3.2 EUR
100+2.23 EUR
500+1.82 EUR
1000+1.69 EUR
2500+1.59 EUR
5000+1.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2302 epc2302_datasheet.pdf
EPC2302
Hersteller: EPC
Description: TRANS GAN 100V DIE .0018OHM
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+6.58 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2302 epc2302_datasheet.pdf
EPC2302
Hersteller: EPC
Description: TRANS GAN 100V DIE .0018OHM
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 93657 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.4 EUR
10+10.46 EUR
100+7.68 EUR
500+7.54 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2302 epc2302_datasheet.pdf
EPC2302
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 1.8 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 16192 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+14.22 EUR
10+9.84 EUR
100+7.58 EUR
1000+7.14 EUR
3000+6.62 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2302ENGRT epc2302_datasheet.pdf
EPC2302ENGRT
Hersteller: EPC
Description: TRANS GAN 100V DIE .0018OHM
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2304 EPC2304_datasheet.pdf
EPC2304
Hersteller: EPC
Description: TRANS GAN 200V .005OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+6.62 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2304 EPC2304_datasheet.pdf
EPC2304
Hersteller: EPC
GaN FETs EPC eGaN FET, 200 V, 5 milliohm at 5 V, 3 mm x 5 mm FCQFN
auf Bestellung 14070 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+15.12 EUR
10+10.39 EUR
100+8.15 EUR
1000+7.66 EUR
3000+6.91 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2304 EPC2304_datasheet.pdf
EPC2304
Hersteller: EPC
Description: TRANS GAN 200V .005OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
auf Bestellung 24890 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.23 EUR
10+11.07 EUR
100+8.15 EUR
500+8.1 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2304ENGRT EPC2304_datasheet.pdf
EPC2304ENGRT
Hersteller: EPC
Description: TRANS GAN 200V .005OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Supplier Device Package: 7-QFN (3x5)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2304ENGRT EPC2304_datasheet.pdf
EPC2304ENGRT
Hersteller: EPC
Description: TRANS GAN 200V .005OHM 3X5PQFN
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Supplier Device Package: 7-QFN (3x5)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2305 EPC2305_datasheet.pdf
EPC2305
Hersteller: EPC
Description: TRANS GAN 150V .0022OHM 3X5 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2305 EPC2305_datasheet.pdf
EPC2305
Hersteller: EPC
Description: TRANS GAN 150V .0022OHM 3X5 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
auf Bestellung 2206 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.82 EUR
10+10.77 EUR
100+7.91 EUR
500+7.82 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2305 EPC2305_datasheet.pdf
EPC2305
Hersteller: EPC
GaN FETs EPC eGaN FET,150 V, 2.2 milliohm typ at 5 V, QFN 3 x 5mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2305ENGRT EPC2305_datasheet.pdf
EPC2305ENGRT
Hersteller: EPC
Description: TRANS GAN 150V .003OHM 3X5MM QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2305ENGRT EPC2305_datasheet.pdf
EPC2305ENGRT
Hersteller: EPC
Description: TRANS GAN 150V .003OHM 3X5MM QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2306 epc2306_datasheet.pdf
EPC2306
Hersteller: EPC
Description: TRANS GAN 100V .0038OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+3.37 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2306 epc2306_datasheet.pdf
EPC2306
Hersteller: EPC
Description: TRANS GAN 100V .0038OHM 3X5PQFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
auf Bestellung 10440 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.78 EUR
10+6.5 EUR
100+4.63 EUR
500+4.12 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2306 epc2306_datasheet.pdf
EPC2306
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 3.1 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 14025 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+9.15 EUR
10+6.09 EUR
100+4.36 EUR
500+4.14 EUR
1000+3.92 EUR
3000+3.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2306ENGRT epc2306_datasheet.pdf
EPC2306ENGRT
Hersteller: EPC
Description: TRANS GAN 100V .0038OHM3X5MM QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
auf Bestellung 375 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.33 EUR
10+7.6 EUR
100+5.52 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2306ENGRT epc2306_datasheet.pdf
EPC2306ENGRT
Hersteller: EPC
Description: TRANS GAN 100V .0038OHM3X5MM QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2307 EPC2307_datasheet.pdf
EPC2307
Hersteller: EPC
GaN FETs EPC eGaN FET,200 V, 10 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 3887 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+9.82 EUR
10+6.51 EUR
100+4.66 EUR
500+4.14 EUR
1000+3.97 EUR
3000+3.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2307 EPC2307_datasheet.pdf
EPC2307
Hersteller: EPC
Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
auf Bestellung 1389 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.78 EUR
10+6.5 EUR
100+4.63 EUR
500+4.12 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2307 EPC2307_datasheet.pdf
EPC2307
Hersteller: EPC
Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2307ENGRT EPC2307_datasheet.pdf?ver=fMAB7MZgiHweLm5wyKPLlg%3d%3d
EPC2307ENGRT
Hersteller: EPC
Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
auf Bestellung 17984 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.2 EUR
10+9.63 EUR
100+7.03 EUR
500+6.81 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2307ENGRT EPC2307_datasheet.pdf?ver=fMAB7MZgiHweLm5wyKPLlg%3d%3d
EPC2307ENGRT
Hersteller: EPC
Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+5.56 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2308 EPC2308_datasheet.pdf
EPC2308
Hersteller: EPC
Description: TRANS GAN 150V .006OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2308 EPC2308_datasheet.pdf
EPC2308
Hersteller: EPC
GaN FETs EPC eGaN FET,150 V, 6 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 5541 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+9.4 EUR
10+6.24 EUR
100+4.46 EUR
500+4.3 EUR
1000+4.06 EUR
3000+3.62 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2308 EPC2308_datasheet.pdf
EPC2308
Hersteller: EPC
Description: TRANS GAN 150V .006OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
auf Bestellung 4491 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.01 EUR
10+6.66 EUR
100+4.76 EUR
500+4.26 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2308ENGRT EPC2308_datasheet.pdf
EPC2308ENGRT
Hersteller: EPC
Description: TRANS GAN 150V .006OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+4.74 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2308ENGRT EPC2308_datasheet.pdf
EPC2308ENGRT
Hersteller: EPC
Description: TRANS GAN 150V .006OHM 3X5PQFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
auf Bestellung 45753 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.61 EUR
10+8.5 EUR
100+6.15 EUR
500+5.8 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23101ENGRT EPC23101_datasheet.pdf
EPC23101ENGRT
Hersteller: EPC
Description: TRANS GAN 100V EPOWER STAGE
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 3.3mOhm
Applications: General Purpose
Current - Output / Channel: 65A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 14-QFN (3.5x5)
Fault Protection: ESD, UVLO
Load Type: Inductive, Capacitive, Resistive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+8.31 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23101ENGRT EPC23101_datasheet.pdf
EPC23101ENGRT
Hersteller: EPC
Description: TRANS GAN 100V EPOWER STAGE
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 3.3mOhm
Applications: General Purpose
Current - Output / Channel: 65A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 14-QFN (3.5x5)
Fault Protection: ESD, UVLO
Load Type: Inductive, Capacitive, Resistive
auf Bestellung 4695 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.41 EUR
10+11.16 EUR
25+10.35 EUR
100+9.46 EUR
250+9.04 EUR
500+8.78 EUR
1000+8.57 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23102 PdfFile_212927.pdf
EPC23102
Hersteller: EPC
Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 6.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 35A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Load Type: Inductive, Capacitive, Resistive
auf Bestellung 8113 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.24 EUR
10+11.83 EUR
25+10.97 EUR
100+10.03 EUR
250+9.81 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23102 PdfFile_212927.pdf
EPC23102
Hersteller: EPC
Gate Drivers Integrated Circuits 100 V ePower stage in FCQFN
auf Bestellung 3677 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+14.99 EUR
10+11.65 EUR
25+10.78 EUR
100+9.87 EUR
250+9.42 EUR
500+9.15 EUR
1000+8.95 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC23102 PdfFile_212927.pdf
EPC23102
Hersteller: EPC
Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 6.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 35A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Load Type: Inductive, Capacitive, Resistive
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+8.82 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23102ENGRT EPC23102_datasheet.pdf
EPC23102ENGRT
Hersteller: EPC
Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 5.2mOhm LS, 5.2mOhm HS
Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
Current - Output / Channel: 35A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: Current Limiting, ESD, Over Voltage, UVLO
Load Type: Inductive, Capacitive, Resistive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC23102ENGRT EPC23102_datasheet.pdf
EPC23102ENGRT
Hersteller: EPC
Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 5.2mOhm LS, 5.2mOhm HS
Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
Current - Output / Channel: 35A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: Current Limiting, ESD, Over Voltage, UVLO
Load Type: Inductive, Capacitive, Resistive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23103ENGRT EPC23103_datasheet.pdf
EPC23103ENGRT
Hersteller: EPC
Description: IC GAN EPOWER STAGE 100V 20A
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 25A
Current - Peak Output: 109A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23103ENGRT EPC23103_datasheet.pdf
EPC23103ENGRT
Hersteller: EPC
Description: IC GAN EPOWER STAGE 100V 20A
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 25A
Current - Peak Output: 109A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
auf Bestellung 482 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.22 EUR
10+10.14 EUR
25+9.66 EUR
100+8.39 EUR
250+8.02 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23104
Hersteller: EPC
Description: IC GAN EPWR STAGE 100V 10A 13QFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Slew Rate Controlled
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: NMOS
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
auf Bestellung 678 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.04 EUR
10+6.89 EUR
25+6.34 EUR
100+5.76 EUR
250+5.49 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23104
Hersteller: EPC
Description: IC GAN EPWR STAGE 100V 10A 13QFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: NMOS
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23104ENGRT EPC23104_datasheet.pdf
EPC23104ENGRT
Hersteller: EPC
Description: IC HALF BRIDGE DRIVER 15A 13WQFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+4.99 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23104ENGRT EPC23104_datasheet.pdf
EPC23104ENGRT
Hersteller: EPC
Description: IC HALF BRIDGE DRIVER 15A 13WQFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
auf Bestellung 10850 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.04 EUR
10+6.89 EUR
25+6.34 EUR
100+5.76 EUR
250+5.49 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2361 EPC2361_datasheet.pdf
EPC2361
Hersteller: EPC
Description: TRANS GAN 100V DIE,1 MOHM, 7PINQ
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+6.69 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2361 EPC2361_datasheet.pdf
EPC2361
Hersteller: EPC
Description: TRANS GAN 100V DIE,1 MOHM, 7PINQ
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V
auf Bestellung 54237 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.34 EUR
10+11.16 EUR
100+8.22 EUR
500+8.18 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2361 EPC2361_datasheet.pdf
EPC2361
Hersteller: EPC
GaN FETs EPC eGaN FET,80 V, 1.0 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 7539 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+16.4 EUR
10+11.21 EUR
100+8.27 EUR
500+8.21 EUR
1000+7.19 EUR
3000+6.97 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2361ENGRT EPC2361_datasheet.pdf
EPC2361ENGRT
Hersteller: EPC
Description: TRANS GAN 100V .001OHM 7QFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2361ENGRT EPC2361_datasheet.pdf
EPC2361ENGRT
Hersteller: EPC
Description: TRANS GAN 100V .001OHM 7QFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2366ENGRT EPC2366_datasheet.pdf
Hersteller: EPC
Description: TRANS GAN 40V DIE,0.8 MOHM,5PINQ
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A
Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-QFN (3.3x2.6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2366ENGRT EPC2366_datasheet.pdf
Hersteller: EPC
Description: TRANS GAN 40V DIE,0.8 MOHM,5PINQ
Packaging: Cut Tape (CT)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A
Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-QFN (3.3x2.6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V
auf Bestellung 443 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.88 EUR
10+5.19 EUR
100+3.67 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2367 EPC2367_datasheet.pdf
EPC2367
Hersteller: EPC
Description: TRANS GAN 100V DIE,1.5 MOHM, 5PI
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 5-QFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+5.07 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2367 EPC2367_datasheet.pdf
EPC2367
Hersteller: EPC
Description: TRANS GAN 100V DIE,1.5 MOHM, 5PI
Packaging: Cut Tape (CT)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 5-QFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V
auf Bestellung 36191 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.28 EUR
10+8.96 EUR
100+6.52 EUR
500+6.2 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2367 EPC2367_datasheet.pdf
EPC2367
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN
auf Bestellung 5528 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+13.28 EUR
10+8.96 EUR
100+6.51 EUR
500+6.22 EUR
1000+5.43 EUR
3000+5.28 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11 12  [ Nächste Seite >> ]