| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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EPC2107ENGRT | EPC |
 Description: TRANS GAN 3N-CH 100V BUMPED DIE |
auf Bestellung 4617 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2107ENGRT | EPC |
Description: TRANS GAN 3N-CH 100V BUMPED DIE |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2107ENGRT | EPC |
Description: TRANS GAN 3N-CH 100V BUMPED DIE |
auf Bestellung 4617 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2108 | EPC |
Description: MOSFET 3N-CH 60V/100V 9BGA Packaging: Tape & Reel (TR) Package / Case: 9-VFBGA Mounting Type: Surface Mount Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V, 100V Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA Supplier Device Package: 9-BGA (1.35x1.35) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2108 | EPC |
Description: MOSFET 3N-CH 60V/100V 9BGA Packaging: Cut Tape (CT) Package / Case: 9-VFBGA Mounting Type: Surface Mount Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V, 100V Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA Supplier Device Package: 9-BGA (1.35x1.35) Part Status: Obsolete |
auf Bestellung 151 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2108ENGRT | EPC |
Description: TRANS GAN 3N-CH BUMPED DIE |
auf Bestellung 4840 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2108ENGRT | EPC |
Description: TRANS GAN 3N-CH BUMPED DIE |
auf Bestellung 4690 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2108ENGRT | EPC |
Description: TRANS GAN 3N-CH BUMPED DIE |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2110 | EPC |
Description: MOSFET 2N-CH 120V 3.4A DIE Packaging: Cut Tape (CT) Package / Case: Die Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 3.4A Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 700µA Supplier Device Package: Die |
auf Bestellung 8133 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2110 | EPC |
Description: MOSFET 2N-CH 120V 3.4A DIE Packaging: Tape & Reel (TR) Package / Case: Die Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 3.4A Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 700µA Supplier Device Package: Die |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2110 | EPC |
GaN FETs EPC eGaN Dual FET, Common Source, 120 V, 110 milliohm at 5 V, BGA 1.35 x 1.35 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2110ENGRT | EPC |
Description: MOSFET 2N-CH 120V 3.4A DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2111 | EPC |
Description: MOSFET 2N-CH 30V 16A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 595pF @ 15V Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.8nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA, 2.5V @ 5mA Supplier Device Package: Die Part Status: Active |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2111 | EPC |
Description: MOSFET 2N-CH 30V 16A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 595pF @ 15V Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.8nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA, 2.5V @ 5mA Supplier Device Package: Die Part Status: Active |
auf Bestellung 9012 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2111ENGRT | EPC |
Description: GAN TRANS ASYMMETRICAL HALF BRID |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2111ENGRT | EPC |
Description: GAN TRANS ASYMMETRICAL HALF BRID |
auf Bestellung 6776 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2112ENGRT | EPC |
Description: IC LOW SIDE DRIVER 10A 10BGA Packaging: Tape & Reel (TR) Package / Case: 10-VFBGA Mounting Type: Surface Mount Interface: On/Off Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 32mOhm Applications: DC-DC Converters Current - Output / Channel: 10A Current - Peak Output: 40A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 160V (Max) Supplier Device Package: 10-BGA (2.9x1.1) Load Type: Inductive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2115ENGRT | EPC |
Description: IC LOW SIDE DRIVER 5A 10BGA Packaging: Cut Tape (CT) Package / Case: 10-VFBGA Mounting Type: Surface Mount Interface: On/Off Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 70mOhm Applications: DC-DC Converters Current - Output / Channel: 5A Current - Peak Output: 18A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 120V (Max) Supplier Device Package: 10-BGA (2.9x1.1) Load Type: Inductive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2115ENGRT | EPC |
Description: IC LOW SIDE DRIVER 5A 10BGA Packaging: Tape & Reel (TR) Package / Case: 10-VFBGA Mounting Type: Surface Mount Interface: On/Off Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 70mOhm Applications: DC-DC Converters Current - Output / Channel: 5A Current - Peak Output: 18A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 120V (Max) Supplier Device Package: 10-BGA (2.9x1.1) Load Type: Inductive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2121 | EPC |
Power Switch ICs - Power Distribution EPC Bi-directional eGaN Power Switch,100 V, 45 milliohm at 5 V, BGA 0.9 x 0.95 |
auf Bestellung 1921 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2121 | EPC |
Description: IC BIDIRECT SW 100V .045OHM 4BGA Packaging: Tape & Reel (TR) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2121 | EPC |
Description: IC BIDIRECT SW 100V .045OHM 4BGA Packaging: Cut Tape (CT) |
auf Bestellung 4287 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2152 | EPC |
Description: IC HALF BRIDGE DRVR 12.5A 12LGA Features: Bootstrap Circuit Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 11V ~ 13V Rds On (Typ): 10mOhm LS + HS Applications: DC Motors, DC-DC Converters Current - Output / Channel: 15A Voltage - Load: 0V ~ 60V Supplier Device Package: Die Fault Protection: Over Voltage, UVLO Load Type: Inductive, Capacitive |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2152 | EPC |
Description: IC HALF BRIDGE DRVR 12.5A 12LGA Features: Bootstrap Circuit Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 11V ~ 13V Rds On (Typ): 10mOhm LS + HS Applications: DC Motors, DC-DC Converters Current - Output / Channel: 15A Voltage - Load: 0V ~ 60V Supplier Device Package: Die Fault Protection: Over Voltage, UVLO Load Type: Inductive, Capacitive |
auf Bestellung 521 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2152 | EPC |
Gate Drivers EPC eGaN IC, 80 V, 15 A Integrated DrGaN Symetrical Half-Bridge Power Stage |
auf Bestellung 496 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2152ENGRT | EPC |
Description: IC HALF BRIDGE DRVR 12.5A 12LGA Features: Bootstrap Circuit Packaging: Tape & Reel (TR) Package / Case: 12-WFLGA Mounting Type: Surface Mount Interface: Logic, PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 11V ~ 13V Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS Applications: Synchronous Buck Converters Current - Output / Channel: 12.5A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 11V ~ 13V Supplier Device Package: 12-LGA (3.85x2.59) Fault Protection: UVLO Load Type: Inductive, Capacitive |
auf Bestellung 22500 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2152ENGRT | EPC |
Description: IC HALF BRIDGE DRVR 12.5A 12LGA Features: Bootstrap Circuit Packaging: Cut Tape (CT) Package / Case: 12-WFLGA Mounting Type: Surface Mount Interface: Logic, PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 11V ~ 13V Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS Applications: Synchronous Buck Converters Current - Output / Channel: 12.5A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 11V ~ 13V Supplier Device Package: 12-LGA (3.85x2.59) Fault Protection: UVLO Load Type: Inductive, Capacitive |
auf Bestellung 22977 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC21601 | EPC |
Description: IC LASER DRVR DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Type: Laser Diode Driver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 30V Supplier Device Package: Die Number of Channels: 1 Current - Supply: 50 mA |
auf Bestellung 8021 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC21601 | EPC |
Laser Drivers IC LASER DRVR 40V 10A 3.3VLOGIC |
auf Bestellung 1886 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC21601 | EPC |
Description: IC LASER DRVR DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Type: Laser Diode Driver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 30V Supplier Device Package: Die Number of Channels: 1 Current - Supply: 50 mA |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC21601ENGRT | EPC |
Description: IC LASER DRVR 40V 10A 3.3V 6BMPD Packaging: Tape & Reel (TR) Type: Laser Diode Driver Voltage - Supply: 1.6V ~ 5.5V Number of Channels: 1 Current - Supply: 50 mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC21603 | EPC |
Laser Drivers IC LASER DRVR 40V 15A LVDS LOGIC |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC21603 | EPC |
Description: IC LASER DRVR 40V 10A LVDSLOGIC Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Type: Laser Diode Driver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 30V Supplier Device Package: Die Part Status: Active Number of Channels: 1 Current - Supply: 47 mA |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC21603 | EPC |
Description: IC LASER DRVR 40V 10A LVDSLOGIC Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Type: Laser Diode Driver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 30V Supplier Device Package: Die Part Status: Active Number of Channels: 1 Current - Supply: 47 mA |
auf Bestellung 7512 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC21603ENGRT | EPC |
Description: IC LASER DRVR 40V 10A LVDS 6BMPD Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC21603ENGRT | EPC |
Description: IC LASER DRVR 40V 10A LVDS 6BMPD Packaging: Cut Tape (CT) |
auf Bestellung 2185 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC21701 | EPC |
Description: IC LASER DRVR Packaging: Tape & Reel (TR) Type: Laser Diode Driver Voltage - Supply: 80V Part Status: Active Number of Channels: 1 |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC21701 | EPC |
Description: IC LASER DRVR Packaging: Cut Tape (CT) Type: Laser Diode Driver Voltage - Supply: 80V Part Status: Active Number of Channels: 1 |
auf Bestellung 31329 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC21701 | EPC |
Laser Drivers IC LASER DRVR 80V 15A |
auf Bestellung 1650 Stücke: Lieferzeit 10-14 Tag (e) |
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| EPC21702ENGRT | EPC |
Description: IC LASER DRVR GAN 80V 30A Packaging: Tape & Reel (TR) Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| EPC21702ENGRT | EPC |
Description: IC LASER DRVR GAN 80V 30A Packaging: Cut Tape (CT) Part Status: Active |
auf Bestellung 2290 Stücke: Lieferzeit 10-14 Tag (e) |
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| EPC21704ENGRT | EPC |
Description: IC LASER DRVR GAN 80V 75A Packaging: Cut Tape (CT) Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| EPC21704ENGRT | EPC |
Description: IC LASER DRVR GAN 80V 75A Packaging: Tape & Reel (TR) Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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EPC2202 | EPC |
Description: GANFET N-CH 80V 18A DIE |
auf Bestellung 32500 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2202 | EPC |
Description: GANFET N-CH 80V 18A DIE |
auf Bestellung 34160 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2203 | EPC |
Description: GANFET N-CH 80V 1.7A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V Vgs(th) (Max) @ Id: 2.5V @ 600µA Supplier Device Package: Die Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +5.75V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 9222 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2203 | EPC |
GaN FETs EPC eGaN FET,80 V, 80 milliohm at 5 V, BGA 0.9 x 0.9 |
auf Bestellung 23653 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2203 | EPC |
Description: GANFET N-CH 80V 1.7A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V Vgs(th) (Max) @ Id: 2.5V @ 600µA Supplier Device Package: Die Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +5.75V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2204 | EPC |
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5 |
auf Bestellung 14783 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2204 | EPC |
Description: TRANS GAN 100V DIE 5.6MOHM Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2204 | EPC |
Description: TRANS GAN 100V DIE 5.6MOHM Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V |
auf Bestellung 104128 Stücke: Lieferzeit 10-14 Tag (e) |
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| EPC2204 | EPC |
N-Channel 100 V 29A (Ta) Surface Mount Die Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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EPC2204A | EPC |
Description: TRANS GAN 80V .006OHM AECQ101 Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA Supplier Device Package: Die Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 Qualification: AEC-Q101 |
auf Bestellung 17500 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2204A | EPC |
Description: TRANS GAN 80V .006OHM AECQ101 Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA Supplier Device Package: Die Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 Qualification: AEC-Q101 |
auf Bestellung 20161 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2204A | EPC |
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5 |
auf Bestellung 2276 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2206 | EPC |
Description: GANFET N-CH 80V 90A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V Vgs(th) (Max) @ Id: 2.5V @ 13mA Supplier Device Package: Die Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40 Qualification: AEC-Q101 |
auf Bestellung 278519 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2206 | EPC |
Description: GANFET N-CH 80V 90A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V Vgs(th) (Max) @ Id: 2.5V @ 13mA Supplier Device Package: Die Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40 Qualification: AEC-Q101 |
auf Bestellung 278425 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2207 | EPC |
Description: TRANS GAN 200V DIE .022OHM Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2207 | EPC |
Description: TRANS GAN 200V DIE .022OHM Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
auf Bestellung 30630 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2207 | EPC |
GaN FETs EPC eGaN FET,200 V, 22 milliohm at 5 V, LGA 3.5 x 2.0 |
auf Bestellung 8997 Stücke: Lieferzeit 10-14 Tag (e) |
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| EPC2107ENGRT |
|
Hersteller: EPC
Description: TRANS GAN 3N-CH 100V BUMPED DIE
Description: TRANS GAN 3N-CH 100V BUMPED DIE
auf Bestellung 4617 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2107ENGRT |
|
Hersteller: EPC
Description: TRANS GAN 3N-CH 100V BUMPED DIE
Description: TRANS GAN 3N-CH 100V BUMPED DIE
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2107ENGRT |
|
Hersteller: EPC
Description: TRANS GAN 3N-CH 100V BUMPED DIE
Description: TRANS GAN 3N-CH 100V BUMPED DIE
auf Bestellung 4617 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2108 |
|
Hersteller: EPC
Description: MOSFET 3N-CH 60V/100V 9BGA
Packaging: Tape & Reel (TR)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V, 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package: 9-BGA (1.35x1.35)
Part Status: Obsolete
Description: MOSFET 3N-CH 60V/100V 9BGA
Packaging: Tape & Reel (TR)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V, 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package: 9-BGA (1.35x1.35)
Part Status: Obsolete
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC2108 |
|
Hersteller: EPC
Description: MOSFET 3N-CH 60V/100V 9BGA
Packaging: Cut Tape (CT)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V, 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package: 9-BGA (1.35x1.35)
Part Status: Obsolete
Description: MOSFET 3N-CH 60V/100V 9BGA
Packaging: Cut Tape (CT)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V, 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package: 9-BGA (1.35x1.35)
Part Status: Obsolete
auf Bestellung 151 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.02 EUR |
| 10+ | 3.24 EUR |
| 100+ | 2.21 EUR |
| EPC2108ENGRT |
|
Hersteller: EPC
Description: TRANS GAN 3N-CH BUMPED DIE
Description: TRANS GAN 3N-CH BUMPED DIE
auf Bestellung 4840 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2108ENGRT |
|
Hersteller: EPC
Description: TRANS GAN 3N-CH BUMPED DIE
Description: TRANS GAN 3N-CH BUMPED DIE
auf Bestellung 4690 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2108ENGRT |
|
Hersteller: EPC
Description: TRANS GAN 3N-CH BUMPED DIE
Description: TRANS GAN 3N-CH BUMPED DIE
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2110 |
|
Hersteller: EPC
Description: MOSFET 2N-CH 120V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: Die
Description: MOSFET 2N-CH 120V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: Die
auf Bestellung 8133 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.68 EUR |
| 10+ | 4.34 EUR |
| 50+ | 3.33 EUR |
| 100+ | 3.01 EUR |
| 500+ | 2.44 EUR |
| EPC2110 |
|
Hersteller: EPC
Description: MOSFET 2N-CH 120V 3.4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: Die
Description: MOSFET 2N-CH 120V 3.4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: Die
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.06 EUR |
| 7500+ | 1.95 EUR |
| EPC2110 |
|
Hersteller: EPC
GaN FETs EPC eGaN Dual FET, Common Source, 120 V, 110 milliohm at 5 V, BGA 1.35 x 1.35
GaN FETs EPC eGaN Dual FET, Common Source, 120 V, 110 milliohm at 5 V, BGA 1.35 x 1.35
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.37 EUR |
| 10+ | 3.28 EUR |
| 100+ | 2.89 EUR |
| 500+ | 2.39 EUR |
| 1000+ | 2.31 EUR |
| 2500+ | 2.01 EUR |
| 5000+ | 1.87 EUR |
| EPC2110ENGRT |
|
Hersteller: EPC
Description: MOSFET 2N-CH 120V 3.4A DIE
Description: MOSFET 2N-CH 120V 3.4A DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC2111 |
|
Hersteller: EPC
Description: MOSFET 2N-CH 30V 16A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 595pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA, 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Active
Description: MOSFET 2N-CH 30V 16A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 595pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA, 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 3.7 EUR |
| EPC2111 |
|
Hersteller: EPC
Description: MOSFET 2N-CH 30V 16A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 595pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA, 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Active
Description: MOSFET 2N-CH 30V 16A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 595pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA, 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 9012 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.53 EUR |
| 10+ | 7.02 EUR |
| 50+ | 5.51 EUR |
| 100+ | 5.02 EUR |
| 500+ | 4.18 EUR |
| EPC2111ENGRT |
|
Hersteller: EPC
Description: GAN TRANS ASYMMETRICAL HALF BRID
Description: GAN TRANS ASYMMETRICAL HALF BRID
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2111ENGRT |
|
Hersteller: EPC
Description: GAN TRANS ASYMMETRICAL HALF BRID
Description: GAN TRANS ASYMMETRICAL HALF BRID
auf Bestellung 6776 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2112ENGRT |
Hersteller: EPC
Description: IC LOW SIDE DRIVER 10A 10BGA
Packaging: Tape & Reel (TR)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 32mOhm
Applications: DC-DC Converters
Current - Output / Channel: 10A
Current - Peak Output: 40A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 160V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Description: IC LOW SIDE DRIVER 10A 10BGA
Packaging: Tape & Reel (TR)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 32mOhm
Applications: DC-DC Converters
Current - Output / Channel: 10A
Current - Peak Output: 40A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 160V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC2115ENGRT |
|
Hersteller: EPC
Description: IC LOW SIDE DRIVER 5A 10BGA
Packaging: Cut Tape (CT)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 70mOhm
Applications: DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 18A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 120V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Description: IC LOW SIDE DRIVER 5A 10BGA
Packaging: Cut Tape (CT)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 70mOhm
Applications: DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 18A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 120V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2115ENGRT |
|
Hersteller: EPC
Description: IC LOW SIDE DRIVER 5A 10BGA
Packaging: Tape & Reel (TR)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 70mOhm
Applications: DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 18A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 120V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Description: IC LOW SIDE DRIVER 5A 10BGA
Packaging: Tape & Reel (TR)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 70mOhm
Applications: DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 18A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 120V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2121 |
|
Hersteller: EPC
Power Switch ICs - Power Distribution EPC Bi-directional eGaN Power Switch,100 V, 45 milliohm at 5 V, BGA 0.9 x 0.95
Power Switch ICs - Power Distribution EPC Bi-directional eGaN Power Switch,100 V, 45 milliohm at 5 V, BGA 0.9 x 0.95
auf Bestellung 1921 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.26 EUR |
| 10+ | 1.64 EUR |
| 25+ | 1.49 EUR |
| 100+ | 1.31 EUR |
| 250+ | 1.23 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 1.13 EUR |
| EPC2121 |
|
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.12 EUR |
| EPC2121 |
|
auf Bestellung 4287 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.94 EUR |
| 10+ | 2.51 EUR |
| 50+ | 1.89 EUR |
| 100+ | 1.7 EUR |
| 500+ | 1.34 EUR |
| EPC2152 |
|
Hersteller: EPC
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 10mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Voltage - Load: 0V ~ 60V
Supplier Device Package: Die
Fault Protection: Over Voltage, UVLO
Load Type: Inductive, Capacitive
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 10mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Voltage - Load: 0V ~ 60V
Supplier Device Package: Die
Fault Protection: Over Voltage, UVLO
Load Type: Inductive, Capacitive
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 11.06 EUR |
| EPC2152 |
|
Hersteller: EPC
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 10mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Voltage - Load: 0V ~ 60V
Supplier Device Package: Die
Fault Protection: Over Voltage, UVLO
Load Type: Inductive, Capacitive
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 10mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Voltage - Load: 0V ~ 60V
Supplier Device Package: Die
Fault Protection: Over Voltage, UVLO
Load Type: Inductive, Capacitive
auf Bestellung 521 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.03 EUR |
| 10+ | 14.01 EUR |
| 25+ | 13.01 EUR |
| 100+ | 11.9 EUR |
| 250+ | 11.67 EUR |
| EPC2152 |
|
Hersteller: EPC
Gate Drivers EPC eGaN IC, 80 V, 15 A Integrated DrGaN Symetrical Half-Bridge Power Stage
Gate Drivers EPC eGaN IC, 80 V, 15 A Integrated DrGaN Symetrical Half-Bridge Power Stage
auf Bestellung 496 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.48 EUR |
| 10+ | 12.79 EUR |
| 25+ | 11.9 EUR |
| 100+ | 10.86 EUR |
| 250+ | 10.53 EUR |
| 500+ | 10.09 EUR |
| 1000+ | 9.73 EUR |
| EPC2152ENGRT |
|
Hersteller: EPC
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 12-WFLGA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 12.5A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 11V ~ 13V
Supplier Device Package: 12-LGA (3.85x2.59)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 12-WFLGA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 12.5A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 11V ~ 13V
Supplier Device Package: 12-LGA (3.85x2.59)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 9.34 EUR |
| EPC2152ENGRT |
|
Hersteller: EPC
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 12-WFLGA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 12.5A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 11V ~ 13V
Supplier Device Package: 12-LGA (3.85x2.59)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 12-WFLGA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 12.5A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 11V ~ 13V
Supplier Device Package: 12-LGA (3.85x2.59)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
auf Bestellung 22977 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.11 EUR |
| 10+ | 13.7 EUR |
| 25+ | 12.02 EUR |
| 100+ | 10.13 EUR |
| 250+ | 9.34 EUR |
| EPC21601 |
|
Hersteller: EPC
Description: IC LASER DRVR DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Number of Channels: 1
Current - Supply: 50 mA
Description: IC LASER DRVR DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Number of Channels: 1
Current - Supply: 50 mA
auf Bestellung 8021 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.57 EUR |
| 10+ | 4.16 EUR |
| 25+ | 3.82 EUR |
| 100+ | 3.43 EUR |
| 250+ | 3.25 EUR |
| 500+ | 3.19 EUR |
| EPC21601 |
|
Hersteller: EPC
Laser Drivers IC LASER DRVR 40V 10A 3.3VLOGIC
Laser Drivers IC LASER DRVR 40V 10A 3.3VLOGIC
auf Bestellung 1886 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.4 EUR |
| 10+ | 4.06 EUR |
| 25+ | 3.71 EUR |
| 100+ | 3.33 EUR |
| 250+ | 3.17 EUR |
| 500+ | 3.09 EUR |
| 1000+ | 2.93 EUR |
| EPC21601 |
|
Hersteller: EPC
Description: IC LASER DRVR DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Number of Channels: 1
Current - Supply: 50 mA
Description: IC LASER DRVR DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Number of Channels: 1
Current - Supply: 50 mA
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.95 EUR |
| 5000+ | 2.89 EUR |
| EPC21601ENGRT |
|
Hersteller: EPC
Description: IC LASER DRVR 40V 10A 3.3V 6BMPD
Packaging: Tape & Reel (TR)
Type: Laser Diode Driver
Voltage - Supply: 1.6V ~ 5.5V
Number of Channels: 1
Current - Supply: 50 mA
Description: IC LASER DRVR 40V 10A 3.3V 6BMPD
Packaging: Tape & Reel (TR)
Type: Laser Diode Driver
Voltage - Supply: 1.6V ~ 5.5V
Number of Channels: 1
Current - Supply: 50 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC21603 |
|
Hersteller: EPC
Laser Drivers IC LASER DRVR 40V 15A LVDS LOGIC
Laser Drivers IC LASER DRVR 40V 15A LVDS LOGIC
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.4 EUR |
| 10+ | 4.06 EUR |
| 25+ | 3.71 EUR |
| 100+ | 3.33 EUR |
| 250+ | 3.17 EUR |
| 500+ | 3.09 EUR |
| 1000+ | 3.01 EUR |
| EPC21603 |
|
Hersteller: EPC
Description: IC LASER DRVR 40V 10A LVDSLOGIC
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Part Status: Active
Number of Channels: 1
Current - Supply: 47 mA
Description: IC LASER DRVR 40V 10A LVDSLOGIC
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Part Status: Active
Number of Channels: 1
Current - Supply: 47 mA
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.9 EUR |
| 5000+ | 2.84 EUR |
| EPC21603 |
|
Hersteller: EPC
Description: IC LASER DRVR 40V 10A LVDSLOGIC
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Part Status: Active
Number of Channels: 1
Current - Supply: 47 mA
Description: IC LASER DRVR 40V 10A LVDSLOGIC
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Part Status: Active
Number of Channels: 1
Current - Supply: 47 mA
auf Bestellung 7512 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.49 EUR |
| 10+ | 4.11 EUR |
| 25+ | 3.76 EUR |
| 100+ | 3.38 EUR |
| 250+ | 3.2 EUR |
| 500+ | 3.14 EUR |
| EPC21603ENGRT |
|
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC21603ENGRT |
|
auf Bestellung 2185 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.49 EUR |
| 10+ | 4.11 EUR |
| 25+ | 3.76 EUR |
| 100+ | 3.38 EUR |
| 250+ | 3.2 EUR |
| 500+ | 3.14 EUR |
| EPC21701 |
|
Hersteller: EPC
Description: IC LASER DRVR
Packaging: Tape & Reel (TR)
Type: Laser Diode Driver
Voltage - Supply: 80V
Part Status: Active
Number of Channels: 1
Description: IC LASER DRVR
Packaging: Tape & Reel (TR)
Type: Laser Diode Driver
Voltage - Supply: 80V
Part Status: Active
Number of Channels: 1
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 3.62 EUR |
| 5000+ | 3.55 EUR |
| EPC21701 |
|
Hersteller: EPC
Description: IC LASER DRVR
Packaging: Cut Tape (CT)
Type: Laser Diode Driver
Voltage - Supply: 80V
Part Status: Active
Number of Channels: 1
Description: IC LASER DRVR
Packaging: Cut Tape (CT)
Type: Laser Diode Driver
Voltage - Supply: 80V
Part Status: Active
Number of Channels: 1
auf Bestellung 31329 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.75 EUR |
| 10+ | 5.07 EUR |
| 25+ | 4.65 EUR |
| 100+ | 4.19 EUR |
| 250+ | 3.97 EUR |
| 500+ | 3.92 EUR |
| EPC21701 |
|
Hersteller: EPC
Laser Drivers IC LASER DRVR 80V 15A
Laser Drivers IC LASER DRVR 80V 15A
auf Bestellung 1650 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.18 EUR |
| 10+ | 4.27 EUR |
| 100+ | 3.64 EUR |
| 500+ | 3.58 EUR |
| 2500+ | 3.28 EUR |
| 5000+ | 3.14 EUR |
| EPC21702ENGRT |
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC21702ENGRT |
auf Bestellung 2290 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.27 EUR |
| 10+ | 7.44 EUR |
| 25+ | 7.03 EUR |
| 100+ | 6.09 EUR |
| 250+ | 5.78 EUR |
| 500+ | 5.19 EUR |
| 1000+ | 4.38 EUR |
| EPC21704ENGRT |
|
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC2202 |
|
Hersteller: EPC
Description: GANFET N-CH 80V 18A DIE
Description: GANFET N-CH 80V 18A DIE
auf Bestellung 32500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.42 EUR |
| 7500+ | 2.36 EUR |
| EPC2202 |
|
Hersteller: EPC
Description: GANFET N-CH 80V 18A DIE
Description: GANFET N-CH 80V 18A DIE
auf Bestellung 34160 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.54 EUR |
| 10+ | 4.95 EUR |
| 50+ | 3.83 EUR |
| 100+ | 3.47 EUR |
| 500+ | 2.89 EUR |
| EPC2203 |
|
Hersteller: EPC
Description: GANFET N-CH 80V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
Qualification: AEC-Q101
Description: GANFET N-CH 80V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 9222 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.14 EUR |
| 11+ | 1.98 EUR |
| 50+ | 1.48 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.04 EUR |
| EPC2203 |
|
Hersteller: EPC
GaN FETs EPC eGaN FET,80 V, 80 milliohm at 5 V, BGA 0.9 x 0.9
GaN FETs EPC eGaN FET,80 V, 80 milliohm at 5 V, BGA 0.9 x 0.9
auf Bestellung 23653 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.03 EUR |
| 10+ | 1.44 EUR |
| 100+ | 1.27 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.96 EUR |
| 2500+ | 0.82 EUR |
| 5000+ | 0.73 EUR |
| EPC2203 |
|
Hersteller: EPC
Description: GANFET N-CH 80V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
Qualification: AEC-Q101
Description: GANFET N-CH 80V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.84 EUR |
| 7500+ | 0.75 EUR |
| EPC2204 |
|
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
auf Bestellung 14783 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.81 EUR |
| 10+ | 3.8 EUR |
| 100+ | 2.64 EUR |
| 500+ | 2.24 EUR |
| 1000+ | 2.14 EUR |
| 2500+ | 1.89 EUR |
| EPC2204 |
|
Hersteller: EPC
Description: TRANS GAN 100V DIE 5.6MOHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Description: TRANS GAN 100V DIE 5.6MOHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.11 EUR |
| 7500+ | 2 EUR |
| EPC2204 |
|
Hersteller: EPC
Description: TRANS GAN 100V DIE 5.6MOHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Description: TRANS GAN 100V DIE 5.6MOHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
auf Bestellung 104128 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.81 EUR |
| 10+ | 4.43 EUR |
| 50+ | 3.4 EUR |
| 100+ | 3.07 EUR |
| 500+ | 2.5 EUR |
| EPC2204 |
|
Hersteller: EPC
N-Channel 100 V 29A (Ta) Surface Mount Die Транзистори
N-Channel 100 V 29A (Ta) Surface Mount Die Транзистори
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| EPC2204A |
|
Hersteller: EPC
Description: TRANS GAN 80V .006OHM AECQ101
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Qualification: AEC-Q101
Description: TRANS GAN 80V .006OHM AECQ101
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Qualification: AEC-Q101
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.48 EUR |
| 7500+ | 2.39 EUR |
| EPC2204A |
|
Hersteller: EPC
Description: TRANS GAN 80V .006OHM AECQ101
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Qualification: AEC-Q101
Description: TRANS GAN 80V .006OHM AECQ101
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Qualification: AEC-Q101
auf Bestellung 20161 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.79 EUR |
| 10+ | 5.09 EUR |
| 50+ | 3.94 EUR |
| 100+ | 3.56 EUR |
| 500+ | 2.93 EUR |
| EPC2204A |
|
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
auf Bestellung 2276 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.39 EUR |
| 10+ | 3.81 EUR |
| 100+ | 3.45 EUR |
| 500+ | 2.84 EUR |
| 1000+ | 2.76 EUR |
| 2500+ | 2.39 EUR |
| 5000+ | 2.28 EUR |
| EPC2206 |
|
Hersteller: EPC
Description: GANFET N-CH 80V 90A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
Qualification: AEC-Q101
Description: GANFET N-CH 80V 90A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
Qualification: AEC-Q101
auf Bestellung 278519 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.19 EUR |
| 10+ | 7.45 EUR |
| 50+ | 5.84 EUR |
| 100+ | 5.33 EUR |
| EPC2206 |
|
Hersteller: EPC
Description: GANFET N-CH 80V 90A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
Qualification: AEC-Q101
Description: GANFET N-CH 80V 90A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
Qualification: AEC-Q101
auf Bestellung 278425 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 4.82 EUR |
| EPC2207 |
|
Hersteller: EPC
Description: TRANS GAN 200V DIE .022OHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: TRANS GAN 200V DIE .022OHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.96 EUR |
| 7500+ | 1.86 EUR |
| EPC2207 |
|
Hersteller: EPC
Description: TRANS GAN 200V DIE .022OHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: TRANS GAN 200V DIE .022OHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 30630 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.37 EUR |
| 10+ | 4.14 EUR |
| 50+ | 3.18 EUR |
| 100+ | 2.87 EUR |
| 500+ | 2.33 EUR |
| EPC2207 |
|
Hersteller: EPC
GaN FETs EPC eGaN FET,200 V, 22 milliohm at 5 V, LGA 3.5 x 2.0
GaN FETs EPC eGaN FET,200 V, 22 milliohm at 5 V, LGA 3.5 x 2.0
auf Bestellung 8997 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.15 EUR |
| 10+ | 3.09 EUR |
| 100+ | 2.78 EUR |
| 500+ | 2.26 EUR |
| 1000+ | 2.24 EUR |
| 2500+ | 1.89 EUR |
| 5000+ | 1.87 EUR |