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EPC2112ENGRT EPC2112ENGRT EPC Description: IC LOW SIDE DRIVER 10A 10BGA
Packaging: Tape & Reel (TR)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 32mOhm
Applications: DC-DC Converters
Current - Output / Channel: 10A
Current - Peak Output: 40A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 160V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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EPC2115ENGRT EPC2115ENGRT EPC EPC2115_preliminary.pdf Description: IC LOW SIDE DRIVER 5A 10BGA
Packaging: Cut Tape (CT)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 70mOhm
Applications: DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 18A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 120V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Produkt ist nicht verfügbar
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EPC2115ENGRT EPC2115ENGRT EPC EPC2115_preliminary.pdf Description: IC LOW SIDE DRIVER 5A 10BGA
Packaging: Tape & Reel (TR)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 70mOhm
Applications: DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 18A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 120V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Produkt ist nicht verfügbar
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EPC2121 EPC EPC2121_datasheet.pdf Description: IC BIDIRECT SW 100V .045OHM 4BGA
Packaging: Cut Tape (CT)
auf Bestellung 4806 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.83 EUR
10+2.45 EUR
25+2.08 EUR
100+1.67 EUR
250+1.48 EUR
500+1.34 EUR
1000+1.25 EUR
Mindestbestellmenge: 6 Stücke
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EPC2121 EPC EPC2121_datasheet.pdf Description: IC BIDIRECT SW 100V .045OHM 4BGA
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.08 EUR
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EPC2152 EPC2152 EPC EPC2152_datasheet.pdf Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 10mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Voltage - Load: 0V ~ 60V
Supplier Device Package: Die
Fault Protection: Over Voltage, UVLO
Load Type: Inductive, Capacitive
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
500+9.98 EUR
1000+9.76 EUR
1500+9.64 EUR
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EPC2152 EPC2152 EPC EPC2152_datasheet.pdf Gate Drivers EPC eGaN IC, 80 V, 15 A Integrated DrGaN Symetrical Half-Bridge Power Stage
auf Bestellung 2379 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.65 EUR
10+13.8 EUR
25+12.27 EUR
100+10.56 EUR
250+9.82 EUR
500+9.72 EUR
1000+9.47 EUR
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EPC2152 EPC2152 EPC EPC2152_datasheet.pdf Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 10mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Voltage - Load: 0V ~ 60V
Supplier Device Package: Die
Fault Protection: Over Voltage, UVLO
Load Type: Inductive, Capacitive
auf Bestellung 8349 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.29 EUR
10+12.66 EUR
25+11.75 EUR
100+10.75 EUR
250+10.54 EUR
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EPC2152ENGRT EPC2152ENGRT EPC EPC2152_datasheet.pdf Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 12-WFLGA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 12.5A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 11V ~ 13V
Supplier Device Package: 12-LGA (3.85x2.59)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
500+9.34 EUR
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EPC2152ENGRT EPC2152ENGRT EPC EPC2152_datasheet.pdf Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 12-WFLGA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 12.5A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 11V ~ 13V
Supplier Device Package: 12-LGA (3.85x2.59)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
auf Bestellung 22977 Stücke:
Lieferzeit 10-14 Tag (e)
2+20.11 EUR
10+13.7 EUR
25+12.02 EUR
100+10.13 EUR
250+9.34 EUR
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EPC21601 EPC21601 EPC EPC21601_datasheet.pdf Description: IC LASER DRVER 40V 10A 3.3VLOGIC
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Number of Channels: 1
Current - Supply: 50 mA
auf Bestellung 7500 Stücke:
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2500+2.82 EUR
5000+2.76 EUR
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EPC21601 EPC21601 EPC EPC21601_datasheet.pdf Description: IC LASER DRVER 40V 10A 3.3VLOGIC
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Number of Channels: 1
Current - Supply: 50 mA
auf Bestellung 9877 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.34 EUR
10+3.99 EUR
25+3.65 EUR
100+3.28 EUR
250+3.11 EUR
500+3.05 EUR
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EPC21601ENGRT EPC21601ENGRT EPC EPC21601_datasheet.pdf Description: IC LASER DRVR 40V 10A 3.3V 6BMPD
Current - Supply: 50 mA
Number of Channels: 1
Voltage - Supply: 1.6V ~ 5.5V
Type: Laser Diode Driver
Packaging: Cut Tape (CT)
auf Bestellung 4333 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.95 EUR
10+5.33 EUR
25+5.05 EUR
100+4.37 EUR
250+4.15 EUR
500+3.72 EUR
1000+3.14 EUR
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EPC21601ENGRT EPC21601ENGRT EPC EPC21601_datasheet.pdf Description: IC LASER DRVR 40V 10A 3.3V 6BMPD
Current - Supply: 50 mA
Number of Channels: 1
Voltage - Supply: 1.6V ~ 5.5V
Type: Laser Diode Driver
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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2500+2.99 EUR
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EPC21603 EPC21603 EPC EPC21603_datasheet.pdf Description: IC LASER DRVR 40V 10A LVDSLOGIC
Current - Supply: 47 mA
Number of Channels: 1
Part Status: Active
Supplier Device Package: Die
Voltage - Supply: 10V ~ 30V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Laser Diode Driver
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
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2500+2.53 EUR
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EPC21603 EPC21603 EPC EPC21603_datasheet.pdf Description: IC LASER DRVR 40V 10A LVDSLOGIC
Current - Supply: 47 mA
Number of Channels: 1
Part Status: Active
Supplier Device Package: Die
Voltage - Supply: 10V ~ 30V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Laser Diode Driver
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
auf Bestellung 7842 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.26 EUR
10+3.94 EUR
25+3.61 EUR
100+3.24 EUR
250+3.07 EUR
500+2.96 EUR
1000+2.87 EUR
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EPC21603ENGRT EPC21603ENGRT EPC EPC21603_datasheet.pdf Description: IC LASER DRVR 40V 10A LVDS 6BMPD
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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2500+2.58 EUR
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EPC21603ENGRT EPC21603ENGRT EPC EPC21603_datasheet.pdf Description: IC LASER DRVR 40V 10A LVDS 6BMPD
Packaging: Cut Tape (CT)
auf Bestellung 5609 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.75 EUR
10+5 EUR
25+4.28 EUR
100+3.47 EUR
250+3.07 EUR
500+2.83 EUR
1000+2.63 EUR
Mindestbestellmenge: 3 Stücke
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EPC21701 EPC21701 EPC EPC21701_datasheet.pdf Description: IC GAN LASER DRVR 80V
Packaging: Tape & Reel (TR)
Type: Laser Diode Driver
Voltage - Supply: 80V
Part Status: Active
Number of Channels: 1
auf Bestellung 32500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.99 EUR
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EPC21701 EPC21701 EPC EPC21701_datasheet.pdf Description: IC GAN LASER DRVR 80V
Packaging: Cut Tape (CT)
Type: Laser Diode Driver
Voltage - Supply: 80V
Part Status: Active
Number of Channels: 1
auf Bestellung 35819 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.63 EUR
10+5.6 EUR
25+4.81 EUR
100+3.92 EUR
250+3.47 EUR
500+3.21 EUR
1000+2.99 EUR
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EPC21702ENGRT EPC Description: IC LASER DRVR GAN 80V 30A
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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EPC21702ENGRT EPC Description: IC LASER DRVR GAN 80V 30A
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 2290 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.27 EUR
10+7.44 EUR
25+7.03 EUR
100+6.09 EUR
250+5.78 EUR
500+5.19 EUR
1000+4.38 EUR
Mindestbestellmenge: 3 Stücke
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EPC21704ENGRT EPC EPC21704_datasheet.pdf Description: IC LASER DRVR GAN 80V 75A
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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EPC21704ENGRT EPC EPC21704_datasheet.pdf Description: IC LASER DRVR GAN 80V 75A
Packaging: Cut Tape (CT)
Part Status: Active
Produkt ist nicht verfügbar
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EPC2202 EPC2202 EPC EPC2202_datasheet.pdf Description: GANFET N-CH 80V 18A DIE
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): +5.75V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
auf Bestellung 32500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.33 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2202 EPC2202 EPC EPC2202_datasheet.pdf Description: GANFET N-CH 80V 18A DIE
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): +5.75V, -4V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
auf Bestellung 34345 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.97 EUR
10+4.57 EUR
100+3.2 EUR
500+2.86 EUR
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EPC2203 EPC2203 EPC EPC2203_datasheet.pdf GaN FETs EPC eGaN FET,80 V, 80 milliohm at 5 V, BGA 0.9 x 0.9
auf Bestellung 5285 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.84 EUR
10+1.8 EUR
100+1.19 EUR
500+0.93 EUR
1000+0.84 EUR
2500+0.76 EUR
5000+0.68 EUR
Mindestbestellmenge: 2 Stücke
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EPC2203 EPC2203 EPC EPC2203_datasheet.pdf Description: GANFET N-CH 80V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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EPC2203 EPC2203 EPC EPC2203_datasheet.pdf Description: GANFET N-CH 80V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 246 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.81 EUR
12+1.77 EUR
100+1.18 EUR
Mindestbestellmenge: 8 Stücke
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EPC2204 EPC2204 EPC EPC2204_datasheet.pdf Description: TRANS GAN 100V DIE 5.6MOHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
auf Bestellung 127929 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.2 EUR
10+4.03 EUR
100+2.8 EUR
500+2.27 EUR
1000+2.23 EUR
Mindestbestellmenge: 4 Stücke
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EPC2204 EPC2204 EPC EPC2204_datasheet.pdf GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
auf Bestellung 14783 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.81 EUR
10+3.8 EUR
100+2.64 EUR
500+2.24 EUR
1000+2.14 EUR
2500+1.89 EUR
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EPC2204 EPC2204 EPC EPC2204_datasheet.pdf Description: TRANS GAN 100V DIE 5.6MOHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
auf Bestellung 127500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.92 EUR
5000+1.82 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2204 EPC EPC2204_datasheet.pdf N-Channel 100 V 29A (Ta) Surface Mount Die Транзистори
Produkt ist nicht verfügbar
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EPC2204A EPC2204A EPC EPC2204A_datasheet.pdf GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
auf Bestellung 2137 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.64 EUR
10+4.36 EUR
100+3.03 EUR
500+2.68 EUR
1000+2.57 EUR
2500+2.28 EUR
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EPC2204A EPC2204A EPC EPC2204A_datasheet.pdf Description: TRANS GAN 80V .006OHM AECQ101
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 22500 Stücke:
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2500+2.25 EUR
5000+2.18 EUR
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EPC2204A EPC2204A EPC EPC2204A_datasheet.pdf Description: TRANS GAN 80V .006OHM AECQ101
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 26990 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.08 EUR
10+4.64 EUR
100+3.25 EUR
500+2.67 EUR
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EPC2206 EPC2206 EPC EPC2206_datasheet.pdf Description: GANFET N-CH 80V 90A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
Qualification: AEC-Q101
auf Bestellung 399802 Stücke:
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EPC2206 EPC2206 EPC EPC2206_datasheet.pdf Description: GANFET N-CH 80V 90A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
Qualification: AEC-Q101
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EPC2207 EPC2207 EPC EPC2207_datasheet.pdf Description: TRANS GAN 200V DIE .022OHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 31007 Stücke:
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10+3.96 EUR
100+2.75 EUR
500+2.23 EUR
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EPC2207 EPC2207 EPC EPC2207_datasheet.pdf Description: TRANS GAN 200V DIE .022OHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.88 EUR
5000+1.78 EUR
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EPC2212 EPC2212 EPC EPC2212_datasheet.pdf Description: GANFET N-CH 100V 18A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Qualification: AEC-Q101
auf Bestellung 80000 Stücke:
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2500+2.42 EUR
5000+2.36 EUR
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EPC2212 EPC2212 EPC EPC2212_datasheet.pdf Description: GANFET N-CH 100V 18A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 82713 Stücke:
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3+7.5 EUR
10+4.91 EUR
100+3.45 EUR
500+2.89 EUR
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EPC2214 EPC2214 EPC EPC2214_datasheet.pdf Description: GANFET N-CH 80V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 107500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.42 EUR
5000+1.32 EUR
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EPC2214 EPC2214 EPC EPC2214_datasheet.pdf Description: GANFET N-CH 80V 10A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 108557 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.8 EUR
10+3.08 EUR
100+2.11 EUR
500+1.69 EUR
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EPC2214 EPC2214 EPC EPC2214_datasheet.pdf GaN FETs EPC eGaN FET, 80 V, 20 milliohm at 5 V, BGA 1.35 x 1.35
auf Bestellung 11558 Stücke:
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1+4.82 EUR
10+3.09 EUR
100+2.12 EUR
500+1.7 EUR
1000+1.57 EUR
2500+1.42 EUR
5000+1.33 EUR
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EPC2215 EPC2215 EPC EPC2215_datasheet.pdf GaN FETs EPC eGaN FET,200 V, 8 milliohm at 5 V, LGA 4.6 x 1.6
auf Bestellung 10850 Stücke:
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1+11.41 EUR
10+7.66 EUR
100+6.37 EUR
1000+6.2 EUR
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EPC2215 EPC2215 EPC EPC2215_datasheet.pdf Description: GAN TRANS 200V 8MOHM BUMPED DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 187500 Stücke:
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2500+3.94 EUR
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EPC2215 EPC2215 EPC EPC2215_datasheet.pdf Description: GAN TRANS 200V 8MOHM BUMPED DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 190912 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.97 EUR
10+7.34 EUR
100+5.27 EUR
500+4.83 EUR
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EPC2216 EPC2216 EPC EPC2216_datasheet.pdf Description: GANFET N-CH 15V 3.4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 7.5 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
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2500+1.01 EUR
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EPC2216 EPC2216 EPC EPC2216_datasheet.pdf GaN FETs EPC eGaN FET,15 V, 26 milliohm at 5 V, BGA 0.85 x 1.2
auf Bestellung 4917 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.86 EUR
10+2.48 EUR
100+1.67 EUR
500+1.32 EUR
1000+1.21 EUR
2500+1.09 EUR
5000+0.99 EUR
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EPC2216 EPC2216 EPC EPC2216_datasheet.pdf Description: GANFET N-CH 15V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 7.5 V
Qualification: AEC-Q101
auf Bestellung 31656 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.86 EUR
10+2.46 EUR
100+1.67 EUR
500+1.32 EUR
1000+1.21 EUR
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EPC2218 EPC2218 EPC EPC2218_datasheet.pdf?ver=C-R46UeqE-iEjg6gr7hUEg%3d%3d Description: GANFET N-CH 100V DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 23000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+5.62 EUR
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EPC2218 EPC2218 EPC EPC2218_datasheet.pdf?ver=C-R46UeqE-iEjg6gr7hUEg%3d%3d Description: GANFET N-CH 100V DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 23560 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.4 EUR
10+9.08 EUR
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EPC2218 EPC EPC2218_datasheet.pdf?ver=C-R46UeqE-iEjg6gr7hUEg%3d%3d
Produkt ist nicht verfügbar
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EPC2218A EPC2218A EPC EPC2218A_datasheet.pdf GaN FETs EPC eGaN FET,80 V, 3.2 milliohm at 5 V, LGA 3.5 x 1.95
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.98 EUR
10+8.04 EUR
100+5.82 EUR
500+5.4 EUR
1000+4.61 EUR
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EPC2218A EPC2218A EPC EPC2218A_datasheet.pdf Description: TRANS GAN 80V .0032OHM AECQ101
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+4.5 EUR
2000+4.36 EUR
Mindestbestellmenge: 1000 Stücke
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EPC2218A EPC2218A EPC EPC2218A_datasheet.pdf Description: TRANS GAN 80V .0032OHM AECQ101
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21758 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.83 EUR
10+7.94 EUR
100+5.74 EUR
500+5.34 EUR
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EPC2219 EPC2219 EPC EPC2219_datasheet.pdf Description: TRANS GAN 65V AECQ101 3.3OHM DIE
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V
Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V
Drain to Source Voltage (Vdss): 65 V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
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10+2.21 EUR
100+1.73 EUR
500+1.46 EUR
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EPC2219 EPC2219 EPC EPC2219_datasheet.pdf Description: TRANS GAN 65V AECQ101 3.3OHM DIE
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V
Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V
Drain to Source Voltage (Vdss): 65 V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
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EPC2221 EPC2221 EPC epc2221_datasheet.pdf GaN FETs EPC AEC eGaN Dual FET,100 V, 58 milliohm at 5 V, BGA 1.35 x 1.35
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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EPC2112ENGRT
EPC2112ENGRT
Hersteller: EPC
Description: IC LOW SIDE DRIVER 10A 10BGA
Packaging: Tape & Reel (TR)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 32mOhm
Applications: DC-DC Converters
Current - Output / Channel: 10A
Current - Peak Output: 40A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 160V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Produkt ist nicht verfügbar
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EPC2115ENGRT EPC2115_preliminary.pdf
EPC2115ENGRT
Hersteller: EPC
Description: IC LOW SIDE DRIVER 5A 10BGA
Packaging: Cut Tape (CT)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 70mOhm
Applications: DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 18A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 120V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Produkt ist nicht verfügbar
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EPC2115ENGRT EPC2115_preliminary.pdf
EPC2115ENGRT
Hersteller: EPC
Description: IC LOW SIDE DRIVER 5A 10BGA
Packaging: Tape & Reel (TR)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 70mOhm
Applications: DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 18A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 120V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Produkt ist nicht verfügbar
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EPC2121 EPC2121_datasheet.pdf
Hersteller: EPC
Description: IC BIDIRECT SW 100V .045OHM 4BGA
Packaging: Cut Tape (CT)
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6+3.83 EUR
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EPC2121 EPC2121_datasheet.pdf
Hersteller: EPC
Description: IC BIDIRECT SW 100V .045OHM 4BGA
Packaging: Tape & Reel (TR)
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2500+1.08 EUR
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EPC2152 EPC2152_datasheet.pdf
EPC2152
Hersteller: EPC
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 10mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Voltage - Load: 0V ~ 60V
Supplier Device Package: Die
Fault Protection: Over Voltage, UVLO
Load Type: Inductive, Capacitive
auf Bestellung 8000 Stücke:
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500+9.98 EUR
1000+9.76 EUR
1500+9.64 EUR
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EPC2152 EPC2152_datasheet.pdf
EPC2152
Hersteller: EPC
Gate Drivers EPC eGaN IC, 80 V, 15 A Integrated DrGaN Symetrical Half-Bridge Power Stage
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1+19.65 EUR
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100+10.56 EUR
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500+9.72 EUR
1000+9.47 EUR
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EPC2152 EPC2152_datasheet.pdf
EPC2152
Hersteller: EPC
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 10mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Voltage - Load: 0V ~ 60V
Supplier Device Package: Die
Fault Protection: Over Voltage, UVLO
Load Type: Inductive, Capacitive
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2+16.29 EUR
10+12.66 EUR
25+11.75 EUR
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EPC2152ENGRT EPC2152_datasheet.pdf
EPC2152ENGRT
Hersteller: EPC
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 12-WFLGA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 12.5A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 11V ~ 13V
Supplier Device Package: 12-LGA (3.85x2.59)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
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EPC2152ENGRT EPC2152_datasheet.pdf
EPC2152ENGRT
Hersteller: EPC
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 12-WFLGA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 12.5A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 11V ~ 13V
Supplier Device Package: 12-LGA (3.85x2.59)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
auf Bestellung 22977 Stücke:
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AnzahlPrivatkunde
2+20.11 EUR
10+13.7 EUR
25+12.02 EUR
100+10.13 EUR
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EPC21601 EPC21601_datasheet.pdf
EPC21601
Hersteller: EPC
Description: IC LASER DRVER 40V 10A 3.3VLOGIC
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Number of Channels: 1
Current - Supply: 50 mA
auf Bestellung 7500 Stücke:
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2500+2.82 EUR
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EPC21601 EPC21601_datasheet.pdf
EPC21601
Hersteller: EPC
Description: IC LASER DRVER 40V 10A 3.3VLOGIC
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Number of Channels: 1
Current - Supply: 50 mA
auf Bestellung 9877 Stücke:
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4+5.34 EUR
10+3.99 EUR
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100+3.28 EUR
250+3.11 EUR
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EPC21601ENGRT EPC21601_datasheet.pdf
EPC21601ENGRT
Hersteller: EPC
Description: IC LASER DRVR 40V 10A 3.3V 6BMPD
Current - Supply: 50 mA
Number of Channels: 1
Voltage - Supply: 1.6V ~ 5.5V
Type: Laser Diode Driver
Packaging: Cut Tape (CT)
auf Bestellung 4333 Stücke:
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4+5.95 EUR
10+5.33 EUR
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EPC21601ENGRT EPC21601_datasheet.pdf
EPC21601ENGRT
Hersteller: EPC
Description: IC LASER DRVR 40V 10A 3.3V 6BMPD
Current - Supply: 50 mA
Number of Channels: 1
Voltage - Supply: 1.6V ~ 5.5V
Type: Laser Diode Driver
Packaging: Tape & Reel (TR)
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2500+2.99 EUR
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EPC21603 EPC21603_datasheet.pdf
EPC21603
Hersteller: EPC
Description: IC LASER DRVR 40V 10A LVDSLOGIC
Current - Supply: 47 mA
Number of Channels: 1
Part Status: Active
Supplier Device Package: Die
Voltage - Supply: 10V ~ 30V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Laser Diode Driver
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
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2500+2.53 EUR
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EPC21603 EPC21603_datasheet.pdf
EPC21603
Hersteller: EPC
Description: IC LASER DRVR 40V 10A LVDSLOGIC
Current - Supply: 47 mA
Number of Channels: 1
Part Status: Active
Supplier Device Package: Die
Voltage - Supply: 10V ~ 30V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Laser Diode Driver
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
auf Bestellung 7842 Stücke:
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4+5.26 EUR
10+3.94 EUR
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100+3.24 EUR
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500+2.96 EUR
1000+2.87 EUR
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EPC21603ENGRT EPC21603_datasheet.pdf
EPC21603ENGRT
Hersteller: EPC
Description: IC LASER DRVR 40V 10A LVDS 6BMPD
Packaging: Tape & Reel (TR)
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2500+2.58 EUR
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EPC21603ENGRT EPC21603_datasheet.pdf
EPC21603ENGRT
Hersteller: EPC
Description: IC LASER DRVR 40V 10A LVDS 6BMPD
Packaging: Cut Tape (CT)
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3+7.75 EUR
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EPC21701 EPC21701_datasheet.pdf
EPC21701
Hersteller: EPC
Description: IC GAN LASER DRVR 80V
Packaging: Tape & Reel (TR)
Type: Laser Diode Driver
Voltage - Supply: 80V
Part Status: Active
Number of Channels: 1
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EPC21701 EPC21701_datasheet.pdf
EPC21701
Hersteller: EPC
Description: IC GAN LASER DRVR 80V
Packaging: Cut Tape (CT)
Type: Laser Diode Driver
Voltage - Supply: 80V
Part Status: Active
Number of Channels: 1
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3+8.63 EUR
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EPC21702ENGRT
Hersteller: EPC
Description: IC LASER DRVR GAN 80V 30A
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
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EPC21702ENGRT
Hersteller: EPC
Description: IC LASER DRVR GAN 80V 30A
Packaging: Cut Tape (CT)
Part Status: Active
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3+8.27 EUR
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EPC21704ENGRT EPC21704_datasheet.pdf
Hersteller: EPC
Description: IC LASER DRVR GAN 80V 75A
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
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EPC21704ENGRT EPC21704_datasheet.pdf
Hersteller: EPC
Description: IC LASER DRVR GAN 80V 75A
Packaging: Cut Tape (CT)
Part Status: Active
Produkt ist nicht verfügbar
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EPC2202 EPC2202_datasheet.pdf
EPC2202
Hersteller: EPC
Description: GANFET N-CH 80V 18A DIE
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): +5.75V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
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2500+2.33 EUR
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EPC2202 EPC2202_datasheet.pdf
EPC2202
Hersteller: EPC
Description: GANFET N-CH 80V 18A DIE
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): +5.75V, -4V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
auf Bestellung 34345 Stücke:
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4+6.97 EUR
10+4.57 EUR
100+3.2 EUR
500+2.86 EUR
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EPC2203 EPC2203_datasheet.pdf
EPC2203
Hersteller: EPC
GaN FETs EPC eGaN FET,80 V, 80 milliohm at 5 V, BGA 0.9 x 0.9
auf Bestellung 5285 Stücke:
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2+2.84 EUR
10+1.8 EUR
100+1.19 EUR
500+0.93 EUR
1000+0.84 EUR
2500+0.76 EUR
5000+0.68 EUR
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EPC2203 EPC2203_datasheet.pdf
EPC2203
Hersteller: EPC
Description: GANFET N-CH 80V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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EPC2203 EPC2203_datasheet.pdf
EPC2203
Hersteller: EPC
Description: GANFET N-CH 80V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 246 Stücke:
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8+2.81 EUR
12+1.77 EUR
100+1.18 EUR
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EPC2204 EPC2204_datasheet.pdf
EPC2204
Hersteller: EPC
Description: TRANS GAN 100V DIE 5.6MOHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
auf Bestellung 127929 Stücke:
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AnzahlPrivatkunde
4+6.2 EUR
10+4.03 EUR
100+2.8 EUR
500+2.27 EUR
1000+2.23 EUR
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EPC2204 EPC2204_datasheet.pdf
EPC2204
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
auf Bestellung 14783 Stücke:
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1+5.81 EUR
10+3.8 EUR
100+2.64 EUR
500+2.24 EUR
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EPC2204 EPC2204_datasheet.pdf
EPC2204
Hersteller: EPC
Description: TRANS GAN 100V DIE 5.6MOHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
auf Bestellung 127500 Stücke:
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EPC2204 EPC2204_datasheet.pdf
Hersteller: EPC
N-Channel 100 V 29A (Ta) Surface Mount Die Транзистори
Produkt ist nicht verfügbar
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EPC2204A EPC2204A_datasheet.pdf
EPC2204A
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
auf Bestellung 2137 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+6.64 EUR
10+4.36 EUR
100+3.03 EUR
500+2.68 EUR
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EPC2204A EPC2204A_datasheet.pdf
EPC2204A
Hersteller: EPC
Description: TRANS GAN 80V .006OHM AECQ101
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 22500 Stücke:
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2500+2.25 EUR
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EPC2204A EPC2204A_datasheet.pdf
EPC2204A
Hersteller: EPC
Description: TRANS GAN 80V .006OHM AECQ101
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 26990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.08 EUR
10+4.64 EUR
100+3.25 EUR
500+2.67 EUR
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EPC2206 EPC2206_datasheet.pdf
EPC2206
Hersteller: EPC
Description: GANFET N-CH 80V 90A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
Qualification: AEC-Q101
auf Bestellung 399802 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.2 EUR
10+6.78 EUR
100+4.86 EUR
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EPC2206 EPC2206_datasheet.pdf
EPC2206
Hersteller: EPC
Description: GANFET N-CH 80V 90A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
Qualification: AEC-Q101
auf Bestellung 399500 Stücke:
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500+4.13 EUR
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EPC2207 EPC2207_datasheet.pdf
EPC2207
Hersteller: EPC
Description: TRANS GAN 200V DIE .022OHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 31007 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.09 EUR
10+3.96 EUR
100+2.75 EUR
500+2.23 EUR
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EPC2207 EPC2207_datasheet.pdf
EPC2207
Hersteller: EPC
Description: TRANS GAN 200V DIE .022OHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.88 EUR
5000+1.78 EUR
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EPC2212 EPC2212_datasheet.pdf
EPC2212
Hersteller: EPC
Description: GANFET N-CH 100V 18A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Qualification: AEC-Q101
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.42 EUR
5000+2.36 EUR
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EPC2212 EPC2212_datasheet.pdf
EPC2212
Hersteller: EPC
Description: GANFET N-CH 100V 18A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 82713 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.5 EUR
10+4.91 EUR
100+3.45 EUR
500+2.89 EUR
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EPC2214 EPC2214_datasheet.pdf
EPC2214
Hersteller: EPC
Description: GANFET N-CH 80V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 107500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.42 EUR
5000+1.32 EUR
7500+1.27 EUR
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EPC2214 EPC2214_datasheet.pdf
EPC2214
Hersteller: EPC
Description: GANFET N-CH 80V 10A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 108557 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.8 EUR
10+3.08 EUR
100+2.11 EUR
500+1.69 EUR
1000+1.56 EUR
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EPC2214 EPC2214_datasheet.pdf
EPC2214
Hersteller: EPC
GaN FETs EPC eGaN FET, 80 V, 20 milliohm at 5 V, BGA 1.35 x 1.35
auf Bestellung 11558 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+4.82 EUR
10+3.09 EUR
100+2.12 EUR
500+1.7 EUR
1000+1.57 EUR
2500+1.42 EUR
5000+1.33 EUR
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EPC2215 EPC2215_datasheet.pdf
EPC2215
Hersteller: EPC
GaN FETs EPC eGaN FET,200 V, 8 milliohm at 5 V, LGA 4.6 x 1.6
auf Bestellung 10850 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+11.41 EUR
10+7.66 EUR
100+6.37 EUR
1000+6.2 EUR
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EPC2215 EPC2215_datasheet.pdf
EPC2215
Hersteller: EPC
Description: GAN TRANS 200V 8MOHM BUMPED DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 187500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+3.94 EUR
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EPC2215 EPC2215_datasheet.pdf
EPC2215
Hersteller: EPC
Description: GAN TRANS 200V 8MOHM BUMPED DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 190912 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.97 EUR
10+7.34 EUR
100+5.27 EUR
500+4.83 EUR
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EPC2216 EPC2216_datasheet.pdf
EPC2216
Hersteller: EPC
Description: GANFET N-CH 15V 3.4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 7.5 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.01 EUR
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EPC2216 EPC2216_datasheet.pdf
EPC2216
Hersteller: EPC
GaN FETs EPC eGaN FET,15 V, 26 milliohm at 5 V, BGA 0.85 x 1.2
auf Bestellung 4917 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+3.86 EUR
10+2.48 EUR
100+1.67 EUR
500+1.32 EUR
1000+1.21 EUR
2500+1.09 EUR
5000+0.99 EUR
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EPC2216 EPC2216_datasheet.pdf
EPC2216
Hersteller: EPC
Description: GANFET N-CH 15V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 7.5 V
Qualification: AEC-Q101
auf Bestellung 31656 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.86 EUR
10+2.46 EUR
100+1.67 EUR
500+1.32 EUR
1000+1.21 EUR
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EPC2218 EPC2218_datasheet.pdf?ver=C-R46UeqE-iEjg6gr7hUEg%3d%3d
EPC2218
Hersteller: EPC
Description: GANFET N-CH 100V DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 23000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+5.62 EUR
Mindestbestellmenge: 1000 Stücke
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EPC2218 EPC2218_datasheet.pdf?ver=C-R46UeqE-iEjg6gr7hUEg%3d%3d
EPC2218
Hersteller: EPC
Description: GANFET N-CH 100V DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 23560 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.4 EUR
10+9.08 EUR
100+6.87 EUR
Mindestbestellmenge: 2 Stücke
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EPC2218 EPC2218_datasheet.pdf?ver=C-R46UeqE-iEjg6gr7hUEg%3d%3d
Hersteller: EPC
Produkt ist nicht verfügbar
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EPC2218A EPC2218A_datasheet.pdf
EPC2218A
Hersteller: EPC
GaN FETs EPC eGaN FET,80 V, 3.2 milliohm at 5 V, LGA 3.5 x 1.95
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+11.98 EUR
10+8.04 EUR
100+5.82 EUR
500+5.4 EUR
1000+4.61 EUR
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EPC2218A EPC2218A_datasheet.pdf
EPC2218A
Hersteller: EPC
Description: TRANS GAN 80V .0032OHM AECQ101
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+4.5 EUR
2000+4.36 EUR
Mindestbestellmenge: 1000 Stücke
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EPC2218A EPC2218A_datasheet.pdf
EPC2218A
Hersteller: EPC
Description: TRANS GAN 80V .0032OHM AECQ101
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21758 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.83 EUR
10+7.94 EUR
100+5.74 EUR
500+5.34 EUR
Mindestbestellmenge: 2 Stücke
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EPC2219 EPC2219_datasheet.pdf
EPC2219
Hersteller: EPC
Description: TRANS GAN 65V AECQ101 3.3OHM DIE
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V
Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V
Drain to Source Voltage (Vdss): 65 V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
auf Bestellung 7999 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.7 EUR
10+2.21 EUR
100+1.73 EUR
500+1.46 EUR
1000+1.19 EUR
Mindestbestellmenge: 8 Stücke
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EPC2219 EPC2219_datasheet.pdf
EPC2219
Hersteller: EPC
Description: TRANS GAN 65V AECQ101 3.3OHM DIE
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V
Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V
Drain to Source Voltage (Vdss): 65 V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.12 EUR
5000+1.07 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2221 epc2221_datasheet.pdf
EPC2221
Hersteller: EPC
GaN FETs EPC AEC eGaN Dual FET,100 V, 58 milliohm at 5 V, BGA 1.35 x 1.35
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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