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EPC2101ENGRT EPC2101ENGRT EPC EPC2101_datasheet.pdf Description: GANFET 2N-CH 60V 9.5A/38A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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EPC2101ENGRT EPC2101ENGRT EPC EPC2101_datasheet.pdf Description: GANFET 2N-CH 60V 9.5A/38A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2102 EPC2102 EPC EPC2102_datasheet.pdf Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1378 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.45 EUR
10+10.65 EUR
100+8.79 EUR
Mindestbestellmenge: 2
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EPC2102 EPC2102 EPC EPC2102_datasheet.pdf Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
500+7.18 EUR
Mindestbestellmenge: 500
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EPC2102ENG EPC2102ENG EPC EPC2102_preliminary.pdf Description: TRANS GAN 2N-CH 60V BUMPED DIE
Produkt ist nicht verfügbar
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EPC2102ENGRT EPC2102ENGRT EPC EPC2102_datasheet.pdf Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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EPC2102ENGRT EPC2102ENGRT EPC EPC2102_datasheet.pdf Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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EPC2103 EPC2103 EPC EPC2103_datasheet.pdf Description: MOSFET 2N-CH 80V 28A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
500+7.71 EUR
1000+7.67 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
EPC2103 EPC2103 EPC EPC2103_datasheet.pdf Description: MOSFET 2N-CH 80V 28A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 8040 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.44 EUR
10+12.04 EUR
100+9.39 EUR
Mindestbestellmenge: 2
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EPC2103ENG EPC2103ENG EPC EPC2103_datasheet.pdf Description: GAN TRANS 2N-CH 80V BUMPED DIE
Produkt ist nicht verfügbar
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EPC2103ENGRT EPC2103ENGRT EPC EPC2103_datasheet.pdf Description: GANFET 2N-CH 80V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2103ENGRT EPC2103ENGRT EPC EPC2103_datasheet.pdf Description: GANFET 2N-CH 80V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2104 EPC2104 EPC EPC2104_datasheet.pdf Description: MOSFET 2N-CH 100V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
500+7.37 EUR
Mindestbestellmenge: 500
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EPC2104 EPC2104 EPC EPC2104_datasheet.pdf Description: MOSFET 2N-CH 100V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 2380 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.77 EUR
10+11.56 EUR
100+8.92 EUR
Mindestbestellmenge: 2
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EPC2104ENG EPC2104ENG EPC EPC2104_preliminary.pdf Description: TRANS GAN 2N-CH 100V BUMPED DIE
Produkt ist nicht verfügbar
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EPC2104ENGRT EPC2104ENGRT EPC EPC2104_datasheet.pdf Description: GANFET 2NCH 100V 23A DIE
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EPC2104ENGRT EPC2104ENGRT EPC EPC2104_datasheet.pdf Description: GANFET 2NCH 100V 23A DIE
Produkt ist nicht verfügbar
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EPC2105 EPC2105 EPC EPC2105_datasheet.pdf Description: MOSFET 2N-CH 80V 9.5A/38A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
500+8.11 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
EPC2105 EPC2105 EPC EPC2105_datasheet.pdf Description: MOSFET 2N-CH 80V 9.5A/38A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1364 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.44 EUR
10+12.02 EUR
100+8.96 EUR
Mindestbestellmenge: 2
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EPC2105ENG EPC2105ENG EPC EPC2105_preliminary.pdf Description: TRANS GAN 2N-CH 80V BUMPED DIE
Produkt ist nicht verfügbar
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EPC2105ENGRT EPC2105ENGRT EPC EPC2105_datasheet.pdf Description: GANFET 2NCH 80V 9.5A DIE
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EPC2105ENGRT EPC2105ENGRT EPC EPC2105_datasheet.pdf Description: GANFET 2NCH 80V 9.5A DIE
Produkt ist nicht verfügbar
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EPC2106 EPC2106 EPC EPC2106_datasheet.pdf GaN FETs EPC eGaN Dual FET,100 V, 70 milliohm at 5 V, BGA 1.35 x 1.35
auf Bestellung 2090 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.03 EUR
10+2.59 EUR
100+1.78 EUR
500+1.44 EUR
1000+1.4 EUR
2500+1.22 EUR
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EPC2106 EPC2106 EPC EPC2106_datasheet.pdf Description: MOSFET 2N-CH 100V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 17497 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.27 EUR
5000+1.19 EUR
7500+1.16 EUR
Mindestbestellmenge: 2500
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EPC2106 EPC2106 EPC EPC2106_datasheet.pdf Description: MOSFET 2N-CH 100V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 17497 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.24 EUR
10+2.74 EUR
100+1.88 EUR
500+1.51 EUR
1000+1.42 EUR
Mindestbestellmenge: 5
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EPC2106ENGRT EPC2106ENGRT EPC EPC2106_datasheet.pdf Description: GANFET 2N-CH 100V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Produkt ist nicht verfügbar
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EPC2106ENGRT EPC2106ENGRT EPC EPC2106_datasheet.pdf Description: GANFET 2N-CH 100V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2107 EPC2107 EPC EPC2107_datasheet.pdf Description: MOSFET 3N-CH 100V 9BGA
Packaging: Tape & Reel (TR)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package: 9-BGA (1.35x1.35)
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.32 EUR
Mindestbestellmenge: 2500
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EPC2107 EPC2107 EPC EPC2107_datasheet.pdf Description: MOSFET 3N-CH 100V 9BGA
Packaging: Cut Tape (CT)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package: 9-BGA (1.35x1.35)
Part Status: Active
auf Bestellung 5068 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.4 EUR
10+2.84 EUR
100+1.96 EUR
500+1.61 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
EPC2107ENGRT EPC2107ENGRT EPC EPC2107_preliminary.pdf Description: TRANS GAN 3N-CH 100V BUMPED DIE
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
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EPC2107ENGRT EPC2107ENGRT EPC EPC2107_preliminary.pdf Description: TRANS GAN 3N-CH 100V BUMPED DIE
auf Bestellung 4617 Stücke:
Lieferzeit 10-14 Tag (e)
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EPC2107ENGRT EPC2107ENGRT EPC EPC2107_preliminary.pdf Description: TRANS GAN 3N-CH 100V BUMPED DIE
auf Bestellung 4617 Stücke:
Lieferzeit 10-14 Tag (e)
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EPC2108 EPC2108 EPC EPC2108_datasheet.pdf Description: MOSFET 3N-CH 60V/100V 9BGA
Packaging: Cut Tape (CT)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V, 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package: 9-BGA (1.35x1.35)
Part Status: Obsolete
auf Bestellung 636 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.89 EUR
10+2.51 EUR
100+1.72 EUR
500+1.38 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
EPC2108 EPC2108 EPC EPC2108_datasheet.pdf Description: MOSFET 3N-CH 60V/100V 9BGA
Packaging: Tape & Reel (TR)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V, 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package: 9-BGA (1.35x1.35)
Part Status: Obsolete
Produkt ist nicht verfügbar
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EPC2108ENGRT EPC2108ENGRT EPC EPC2108_preliminary.pdf Description: TRANS GAN 3N-CH BUMPED DIE
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EPC2108ENGRT EPC2108ENGRT EPC EPC2108_preliminary.pdf Description: TRANS GAN 3N-CH BUMPED DIE
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EPC2108ENGRT EPC2108ENGRT EPC EPC2108_preliminary.pdf Description: TRANS GAN 3N-CH BUMPED DIE
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EPC2110 EPC2110 EPC EPC2110_datasheet.pdf Description: MOSFET 2N-CH 120V 3.4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: Die
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EPC2110 EPC2110 EPC EPC2110_datasheet.pdf Description: MOSFET 2N-CH 120V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: Die
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EPC2110ENGRT EPC2110ENGRT EPC epc2110_datasheet.pdf Description: GAN TRANS 2N-CH 120V BUMPED DIE
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EPC2110ENGRT EPC2110ENGRT EPC epc2110_datasheet.pdf Description: GAN TRANS 2N-CH 120V BUMPED DIE
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EPC2111 EPC2111 EPC EPC2111_datasheet.pdf Description: MOSFET 2N-CH 30V 16A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 595pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA, 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Active
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500+2.69 EUR
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EPC2111 EPC2111 EPC EPC2111_datasheet.pdf Description: MOSFET 2N-CH 30V 16A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 595pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA, 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Active
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EPC2111ENGRT EPC2111ENGRT EPC EPC2111_datasheet.pdf Description: GAN TRANS ASYMMETRICAL HALF BRID
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EPC2111ENGRT EPC2111ENGRT EPC EPC2111_datasheet.pdf Description: GAN TRANS ASYMMETRICAL HALF BRID
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EPC2112ENGRT EPC2112ENGRT EPC Description: IC LOW SIDE DRIVER 10A 10BGA
Packaging: Tape & Reel (TR)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 32mOhm
Applications: DC-DC Converters
Current - Output / Channel: 10A
Current - Peak Output: 40A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 160V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Produkt ist nicht verfügbar
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EPC2115ENGRT EPC2115ENGRT EPC EPC2115_preliminary.pdf Description: IC LOW SIDE DRIVER 5A 10BGA
Packaging: Cut Tape (CT)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 70mOhm
Applications: DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 18A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 120V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Produkt ist nicht verfügbar
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EPC2115ENGRT EPC2115ENGRT EPC EPC2115_preliminary.pdf Description: IC LOW SIDE DRIVER 5A 10BGA
Packaging: Tape & Reel (TR)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 70mOhm
Applications: DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 18A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 120V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Produkt ist nicht verfügbar
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EPC2121 EPC EPC2121_datasheet.pdf Description: IC BIDIRECT SW 100V .045OHM 4BGA
Packaging: Tape & Reel (TR)
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2500+0.91 EUR
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EPC2121 EPC EPC2121_datasheet.pdf Description: IC BIDIRECT SW 100V .045OHM 4BGA
Packaging: Cut Tape (CT)
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EPC2152 EPC2152 EPC EPC2152_datasheet.pdf Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 10mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Voltage - Load: 0V ~ 60V
Supplier Device Package: Die
Fault Protection: Over Voltage, UVLO
Load Type: Inductive, Capacitive
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2+16.51 EUR
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EPC2152 EPC2152 EPC EPC2152_datasheet.pdf Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 10mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Voltage - Load: 0V ~ 60V
Supplier Device Package: Die
Fault Protection: Over Voltage, UVLO
Load Type: Inductive, Capacitive
auf Bestellung 8000 Stücke:
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500+8.21 EUR
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EPC2152ENGRT EPC2152ENGRT EPC EPC2152_datasheet.pdf Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 12-WFLGA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 12.5A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 11V ~ 13V
Supplier Device Package: 12-LGA (3.85x2.59)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
auf Bestellung 22500 Stücke:
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EPC2152ENGRT EPC2152ENGRT EPC EPC2152_datasheet.pdf Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit
Package / Case: 12-WFLGA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 12.5A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 11V ~ 13V
Supplier Device Package: 12-LGA (3.85x2.59)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
auf Bestellung 22977 Stücke:
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2+16.9 EUR
10+11.51 EUR
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EPC21601 EPC21601 EPC EPC21601_datasheet.pdf Description: IC LASER DRVER 40V 10A 3.3VLOGIC
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Number of Channels: 1
Current - Supply: 50 mA
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EPC21601 EPC21601 EPC EPC21601_datasheet.pdf Description: IC LASER DRVER 40V 10A 3.3VLOGIC
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Number of Channels: 1
Current - Supply: 50 mA
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4+4.54 EUR
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EPC21601ENGRT EPC21601ENGRT EPC EPC21601_datasheet.pdf Description: IC LASER DRVR 40V 10A 3.3V 6BMPD
Packaging: Tape & Reel (TR)
Type: Laser Diode Driver
Voltage - Supply: 1.6V ~ 5.5V
Number of Channels: 1
Current - Supply: 50 mA
auf Bestellung 2500 Stücke:
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2500+2.51 EUR
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EPC21601ENGRT EPC21601ENGRT EPC EPC21601_datasheet.pdf Description: IC LASER DRVR 40V 10A 3.3V 6BMPD
Packaging: Cut Tape (CT)
Type: Laser Diode Driver
Voltage - Supply: 1.6V ~ 5.5V
Number of Channels: 1
Current - Supply: 50 mA
auf Bestellung 4333 Stücke:
Lieferzeit 10-14 Tag (e)
4+5 EUR
10+4.48 EUR
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100+3.67 EUR
250+3.49 EUR
500+3.13 EUR
1000+2.64 EUR
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EPC21603 EPC21603 EPC EPC21603_datasheet.pdf Description: IC LASER DRVR 40V 10A LVDSLOGIC
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Part Status: Active
Number of Channels: 1
Current - Supply: 47 mA
auf Bestellung 7842 Stücke:
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4+4.42 EUR
10+3.31 EUR
25+3.03 EUR
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EPC21603 EPC21603 EPC EPC21603_datasheet.pdf Description: IC LASER DRVR 40V 10A LVDSLOGIC
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Part Status: Active
Number of Channels: 1
Current - Supply: 47 mA
auf Bestellung 7500 Stücke:
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2500+2.13 EUR
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EPC2101ENGRT EPC2101_datasheet.pdf
EPC2101ENGRT
Hersteller: EPC
Description: GANFET 2N-CH 60V 9.5A/38A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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EPC2101ENGRT EPC2101_datasheet.pdf
EPC2101ENGRT
Hersteller: EPC
Description: GANFET 2N-CH 60V 9.5A/38A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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EPC2102 EPC2102_datasheet.pdf
EPC2102
Hersteller: EPC
Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1378 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.45 EUR
10+10.65 EUR
100+8.79 EUR
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EPC2102 EPC2102_datasheet.pdf
EPC2102
Hersteller: EPC
Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+7.18 EUR
Mindestbestellmenge: 500
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EPC2102ENG EPC2102_preliminary.pdf
EPC2102ENG
Hersteller: EPC
Description: TRANS GAN 2N-CH 60V BUMPED DIE
Produkt ist nicht verfügbar
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EPC2102ENGRT EPC2102_datasheet.pdf
EPC2102ENGRT
Hersteller: EPC
Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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EPC2102ENGRT EPC2102_datasheet.pdf
EPC2102ENGRT
Hersteller: EPC
Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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EPC2103 EPC2103_datasheet.pdf
EPC2103
Hersteller: EPC
Description: MOSFET 2N-CH 80V 28A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+7.71 EUR
1000+7.67 EUR
Mindestbestellmenge: 500
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EPC2103 EPC2103_datasheet.pdf
EPC2103
Hersteller: EPC
Description: MOSFET 2N-CH 80V 28A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 8040 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.44 EUR
10+12.04 EUR
100+9.39 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
EPC2103ENG EPC2103_datasheet.pdf
EPC2103ENG
Hersteller: EPC
Description: GAN TRANS 2N-CH 80V BUMPED DIE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2103ENGRT EPC2103_datasheet.pdf
EPC2103ENGRT
Hersteller: EPC
Description: GANFET 2N-CH 80V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2103ENGRT EPC2103_datasheet.pdf
EPC2103ENGRT
Hersteller: EPC
Description: GANFET 2N-CH 80V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2104 EPC2104_datasheet.pdf
EPC2104
Hersteller: EPC
Description: MOSFET 2N-CH 100V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+7.37 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
EPC2104 EPC2104_datasheet.pdf
EPC2104
Hersteller: EPC
Description: MOSFET 2N-CH 100V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 2380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.77 EUR
10+11.56 EUR
100+8.92 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
EPC2104ENG EPC2104_preliminary.pdf
EPC2104ENG
Hersteller: EPC
Description: TRANS GAN 2N-CH 100V BUMPED DIE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2104ENGRT EPC2104_datasheet.pdf
EPC2104ENGRT
Hersteller: EPC
Description: GANFET 2NCH 100V 23A DIE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2104ENGRT EPC2104_datasheet.pdf
EPC2104ENGRT
Hersteller: EPC
Description: GANFET 2NCH 100V 23A DIE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2105 EPC2105_datasheet.pdf
EPC2105
Hersteller: EPC
Description: MOSFET 2N-CH 80V 9.5A/38A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+8.11 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
EPC2105 EPC2105_datasheet.pdf
EPC2105
Hersteller: EPC
Description: MOSFET 2N-CH 80V 9.5A/38A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1364 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.44 EUR
10+12.02 EUR
100+8.96 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
EPC2105ENG EPC2105_preliminary.pdf
EPC2105ENG
Hersteller: EPC
Description: TRANS GAN 2N-CH 80V BUMPED DIE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2105ENGRT EPC2105_datasheet.pdf
EPC2105ENGRT
Hersteller: EPC
Description: GANFET 2NCH 80V 9.5A DIE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2105ENGRT EPC2105_datasheet.pdf
EPC2105ENGRT
Hersteller: EPC
Description: GANFET 2NCH 80V 9.5A DIE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2106 EPC2106_datasheet.pdf
EPC2106
Hersteller: EPC
GaN FETs EPC eGaN Dual FET,100 V, 70 milliohm at 5 V, BGA 1.35 x 1.35
auf Bestellung 2090 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.03 EUR
10+2.59 EUR
100+1.78 EUR
500+1.44 EUR
1000+1.4 EUR
2500+1.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2106 EPC2106_datasheet.pdf
EPC2106
Hersteller: EPC
Description: MOSFET 2N-CH 100V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 17497 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.27 EUR
5000+1.19 EUR
7500+1.16 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
EPC2106 EPC2106_datasheet.pdf
EPC2106
Hersteller: EPC
Description: MOSFET 2N-CH 100V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 17497 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.24 EUR
10+2.74 EUR
100+1.88 EUR
500+1.51 EUR
1000+1.42 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
EPC2106ENGRT EPC2106_datasheet.pdf
EPC2106ENGRT
Hersteller: EPC
Description: GANFET 2N-CH 100V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2106ENGRT EPC2106_datasheet.pdf
EPC2106ENGRT
Hersteller: EPC
Description: GANFET 2N-CH 100V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2107 EPC2107_datasheet.pdf
EPC2107
Hersteller: EPC
Description: MOSFET 3N-CH 100V 9BGA
Packaging: Tape & Reel (TR)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package: 9-BGA (1.35x1.35)
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.32 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
EPC2107 EPC2107_datasheet.pdf
EPC2107
Hersteller: EPC
Description: MOSFET 3N-CH 100V 9BGA
Packaging: Cut Tape (CT)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package: 9-BGA (1.35x1.35)
Part Status: Active
auf Bestellung 5068 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.4 EUR
10+2.84 EUR
100+1.96 EUR
500+1.61 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
EPC2107ENGRT EPC2107_preliminary.pdf
EPC2107ENGRT
Hersteller: EPC
Description: TRANS GAN 3N-CH 100V BUMPED DIE
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
EPC2107ENGRT EPC2107_preliminary.pdf
EPC2107ENGRT
Hersteller: EPC
Description: TRANS GAN 3N-CH 100V BUMPED DIE
auf Bestellung 4617 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
EPC2107ENGRT EPC2107_preliminary.pdf
EPC2107ENGRT
Hersteller: EPC
Description: TRANS GAN 3N-CH 100V BUMPED DIE
auf Bestellung 4617 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
EPC2108 EPC2108_datasheet.pdf
EPC2108
Hersteller: EPC
Description: MOSFET 3N-CH 60V/100V 9BGA
Packaging: Cut Tape (CT)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V, 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package: 9-BGA (1.35x1.35)
Part Status: Obsolete
auf Bestellung 636 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.89 EUR
10+2.51 EUR
100+1.72 EUR
500+1.38 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
EPC2108 EPC2108_datasheet.pdf
EPC2108
Hersteller: EPC
Description: MOSFET 3N-CH 60V/100V 9BGA
Packaging: Tape & Reel (TR)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V, 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package: 9-BGA (1.35x1.35)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2108ENGRT EPC2108_preliminary.pdf
EPC2108ENGRT
Hersteller: EPC
Description: TRANS GAN 3N-CH BUMPED DIE
auf Bestellung 4690 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
EPC2108ENGRT EPC2108_preliminary.pdf
EPC2108ENGRT
Hersteller: EPC
Description: TRANS GAN 3N-CH BUMPED DIE
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
EPC2108ENGRT EPC2108_preliminary.pdf
EPC2108ENGRT
Hersteller: EPC
Description: TRANS GAN 3N-CH BUMPED DIE
auf Bestellung 4840 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
EPC2110 EPC2110_datasheet.pdf
EPC2110
Hersteller: EPC
Description: MOSFET 2N-CH 120V 3.4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: Die
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.62 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
EPC2110 EPC2110_datasheet.pdf
EPC2110
Hersteller: EPC
Description: MOSFET 2N-CH 120V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: Die
auf Bestellung 12120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.19 EUR
10+3.38 EUR
100+2.34 EUR
500+1.9 EUR
1000+1.76 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
EPC2110ENGRT epc2110_datasheet.pdf
EPC2110ENGRT
Hersteller: EPC
Description: GAN TRANS 2N-CH 120V BUMPED DIE
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
EPC2110ENGRT epc2110_datasheet.pdf
EPC2110ENGRT
Hersteller: EPC
Description: GAN TRANS 2N-CH 120V BUMPED DIE
auf Bestellung 11681 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
EPC2111 EPC2111_datasheet.pdf
EPC2111
Hersteller: EPC
Description: MOSFET 2N-CH 30V 16A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 595pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA, 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 15523 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.02 EUR
10+4.64 EUR
100+3.28 EUR
500+2.69 EUR
1000+2.51 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
EPC2111 EPC2111_datasheet.pdf
EPC2111
Hersteller: EPC
Description: MOSFET 2N-CH 30V 16A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 595pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA, 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.29 EUR
Mindestbestellmenge: 2500
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EPC2111ENGRT EPC2111_datasheet.pdf
EPC2111ENGRT
Hersteller: EPC
Description: GAN TRANS ASYMMETRICAL HALF BRID
auf Bestellung 6000 Stücke:
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EPC2111ENGRT EPC2111_datasheet.pdf
EPC2111ENGRT
Hersteller: EPC
Description: GAN TRANS ASYMMETRICAL HALF BRID
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EPC2112ENGRT
EPC2112ENGRT
Hersteller: EPC
Description: IC LOW SIDE DRIVER 10A 10BGA
Packaging: Tape & Reel (TR)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 32mOhm
Applications: DC-DC Converters
Current - Output / Channel: 10A
Current - Peak Output: 40A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 160V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Produkt ist nicht verfügbar
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EPC2115ENGRT EPC2115_preliminary.pdf
EPC2115ENGRT
Hersteller: EPC
Description: IC LOW SIDE DRIVER 5A 10BGA
Packaging: Cut Tape (CT)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 70mOhm
Applications: DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 18A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 120V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Produkt ist nicht verfügbar
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EPC2115ENGRT EPC2115_preliminary.pdf
EPC2115ENGRT
Hersteller: EPC
Description: IC LOW SIDE DRIVER 5A 10BGA
Packaging: Tape & Reel (TR)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 70mOhm
Applications: DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 18A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 120V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Produkt ist nicht verfügbar
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EPC2121 EPC2121_datasheet.pdf
Hersteller: EPC
Description: IC BIDIRECT SW 100V .045OHM 4BGA
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.91 EUR
Mindestbestellmenge: 2500
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EPC2121 EPC2121_datasheet.pdf
Hersteller: EPC
Description: IC BIDIRECT SW 100V .045OHM 4BGA
Packaging: Cut Tape (CT)
auf Bestellung 4806 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.22 EUR
10+2.06 EUR
25+1.75 EUR
100+1.4 EUR
250+1.24 EUR
500+1.13 EUR
1000+1.05 EUR
Mindestbestellmenge: 6
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EPC2152 EPC2152_datasheet.pdf
EPC2152
Hersteller: EPC
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 10mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Voltage - Load: 0V ~ 60V
Supplier Device Package: Die
Fault Protection: Over Voltage, UVLO
Load Type: Inductive, Capacitive
auf Bestellung 8369 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.51 EUR
10+11.53 EUR
25+10.25 EUR
100+8.82 EUR
250+8.13 EUR
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EPC2152 EPC2152_datasheet.pdf
EPC2152
Hersteller: EPC
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 10mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Voltage - Load: 0V ~ 60V
Supplier Device Package: Die
Fault Protection: Over Voltage, UVLO
Load Type: Inductive, Capacitive
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+8.21 EUR
1000+8.02 EUR
1500+7.92 EUR
Mindestbestellmenge: 500
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EPC2152ENGRT EPC2152_datasheet.pdf
EPC2152ENGRT
Hersteller: EPC
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 12-WFLGA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 12.5A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 11V ~ 13V
Supplier Device Package: 12-LGA (3.85x2.59)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+7.85 EUR
Mindestbestellmenge: 500
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EPC2152ENGRT EPC2152_datasheet.pdf
EPC2152ENGRT
Hersteller: EPC
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit
Package / Case: 12-WFLGA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 12.5A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 11V ~ 13V
Supplier Device Package: 12-LGA (3.85x2.59)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
auf Bestellung 22977 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.9 EUR
10+11.51 EUR
25+10.1 EUR
100+8.51 EUR
250+7.85 EUR
Mindestbestellmenge: 2
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EPC21601 EPC21601_datasheet.pdf
EPC21601
Hersteller: EPC
Description: IC LASER DRVER 40V 10A 3.3VLOGIC
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Number of Channels: 1
Current - Supply: 50 mA
auf Bestellung 7500 Stücke:
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Anzahl Preis
2500+2.4 EUR
5000+2.35 EUR
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EPC21601 EPC21601_datasheet.pdf
EPC21601
Hersteller: EPC
Description: IC LASER DRVER 40V 10A 3.3VLOGIC
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Number of Channels: 1
Current - Supply: 50 mA
auf Bestellung 9898 Stücke:
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Anzahl Preis
4+4.54 EUR
10+3.4 EUR
25+3.11 EUR
100+2.79 EUR
250+2.64 EUR
500+2.6 EUR
Mindestbestellmenge: 4
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EPC21601ENGRT EPC21601_datasheet.pdf
EPC21601ENGRT
Hersteller: EPC
Description: IC LASER DRVR 40V 10A 3.3V 6BMPD
Packaging: Tape & Reel (TR)
Type: Laser Diode Driver
Voltage - Supply: 1.6V ~ 5.5V
Number of Channels: 1
Current - Supply: 50 mA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.51 EUR
Mindestbestellmenge: 2500
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EPC21601ENGRT EPC21601_datasheet.pdf
EPC21601ENGRT
Hersteller: EPC
Description: IC LASER DRVR 40V 10A 3.3V 6BMPD
Packaging: Cut Tape (CT)
Type: Laser Diode Driver
Voltage - Supply: 1.6V ~ 5.5V
Number of Channels: 1
Current - Supply: 50 mA
auf Bestellung 4333 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5 EUR
10+4.48 EUR
25+4.24 EUR
100+3.67 EUR
250+3.49 EUR
500+3.13 EUR
1000+2.64 EUR
Mindestbestellmenge: 4
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EPC21603 EPC21603_datasheet.pdf
EPC21603
Hersteller: EPC
Description: IC LASER DRVR 40V 10A LVDSLOGIC
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Part Status: Active
Number of Channels: 1
Current - Supply: 47 mA
auf Bestellung 7842 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.42 EUR
10+3.31 EUR
25+3.03 EUR
100+2.72 EUR
250+2.58 EUR
500+2.49 EUR
1000+2.41 EUR
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EPC21603 EPC21603_datasheet.pdf
EPC21603
Hersteller: EPC
Description: IC LASER DRVR 40V 10A LVDSLOGIC
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Part Status: Active
Number of Channels: 1
Current - Supply: 47 mA
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.13 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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