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EPC2088 EPC2088 EPC EPC2088_datasheet.pdf Description: TRANS GAN 100V .0032OHM BMP DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 50 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.65 EUR
2000+3.45 EUR
Mindestbestellmenge: 1000 Stücke
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EPC2088 EPC2088 EPC EPC2088_datasheet.pdf Description: TRANS GAN 100V .0032OHM BMP DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 50 V
auf Bestellung 34776 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.92 EUR
10+6.6 EUR
100+4.72 EUR
500+4.22 EUR
Mindestbestellmenge: 3 Stücke
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EPC2090 EPC2090 EPC EPC2090_datasheet.pdf GaN FETs 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP
auf Bestellung 1901 Stücke:
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1+7.52 EUR
10+4.96 EUR
100+3.47 EUR
500+2.89 EUR
2500+2.45 EUR
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EPC2091 EPC2091 EPC EPC2091_datasheet.pdf GaN FETs 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP
auf Bestellung 800 Stücke:
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1+17.53 EUR
10+12.02 EUR
100+8.96 EUR
1000+7.63 EUR
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EPC2092 EPC2092 EPC GaN FETs 100 V eGaN FET, 3.2 mohm Rdson, 3.725 mm x 1.45 mm, Cu pillar CSP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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EPC2100 EPC2100 EPC EPC2100_datasheet.pdf Description: MOSFET 2N-CH 30V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Active
Produkt ist nicht verfügbar
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EPC2100 EPC2100 EPC EPC2100_datasheet.pdf Description: MOSFET 2N-CH 30V 10A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)
2+19.4 EUR
10+13.4 EUR
100+10.01 EUR
Mindestbestellmenge: 2 Stücke
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EPC2100ENG EPC2100ENG EPC EPC2106_preliminary.pdf Description: TRANS GAN 2N-CH 30V BUMPED DIE
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 10 Stücke
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EPC2100ENGRT EPC2100ENGRT EPC EPC2100_datasheet.pdf Description: GANFET 2 N-CH 30V 9.5A/38A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Active
Produkt ist nicht verfügbar
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EPC2100ENGRT EPC2100ENGRT EPC EPC2100_datasheet.pdf Description: GANFET 2 N-CH 30V 9.5A/38A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 500 Stücke
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EPC2101 EPC2101 EPC EPC2101_datasheet.pdf Description: MOSFET 2N-CH 60V 9.5A/38A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
500+9 EUR
Mindestbestellmenge: 500 Stücke
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EPC2101 EPC2101 EPC EPC2101_datasheet.pdf Description: MOSFET 2N-CH 60V 9.5A/38A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 563 Stücke:
Lieferzeit 10-14 Tag (e)
2+19.12 EUR
10+13.2 EUR
100+11.01 EUR
Mindestbestellmenge: 2 Stücke
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EPC2101ENG EPC2101ENG EPC EPC2101_preliminary.pdf Description: TRANS GAN 2N-CH 60V BUMPED DIE
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 10 Stücke
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EPC2101ENGRT EPC2101ENGRT EPC EPC2101_datasheet.pdf Description: GANFET 2N-CH 60V 9.5A/38A DIE
Part Status: Discontinued at Digi-Key
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Drain to Source Voltage (Vdss): 60V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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EPC2101ENGRT EPC2101ENGRT EPC EPC2101_datasheet.pdf Description: GANFET 2N-CH 60V 9.5A/38A DIE
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Drain to Source Voltage (Vdss): 60V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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EPC2102 EPC2102 EPC EPC2102_datasheet.pdf Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1378 Stücke:
Lieferzeit 10-14 Tag (e)
2+18.39 EUR
10+12.67 EUR
100+10.46 EUR
Mindestbestellmenge: 2 Stücke
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EPC2102 EPC2102 EPC EPC2102_datasheet.pdf Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
500+8.54 EUR
Mindestbestellmenge: 500 Stücke
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EPC2102 EPC2102 EPC EPC2102_datasheet.pdf GaN FETs EPC eGaN Symetrical Half Bridge,60 V, 4.9 milliohm at 5 V, BGA 6.05 x 2.3
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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EPC2102ENG EPC2102ENG EPC EPC2102_preliminary.pdf Description: TRANS GAN 2N-CH 60V BUMPED DIE
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
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EPC2102ENGRT EPC2102ENGRT EPC EPC2102_datasheet.pdf Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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EPC2102ENGRT EPC2102ENGRT EPC EPC2102_datasheet.pdf Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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EPC2103 EPC2103 EPC EPC2103_datasheet.pdf Description: MOSFET 2N-CH 80V 28A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 7834 Stücke:
Lieferzeit 10-14 Tag (e)
2+20.65 EUR
10+14.27 EUR
100+11.11 EUR
Mindestbestellmenge: 2 Stücke
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EPC2103 EPC2103 EPC EPC2103_datasheet.pdf Description: MOSFET 2N-CH 80V 28A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
500+9.13 EUR
1000+9.08 EUR
Mindestbestellmenge: 500 Stücke
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EPC2103ENG EPC2103ENG EPC EPC2103_datasheet.pdf Description: GAN TRANS 2N-CH 80V BUMPED DIE
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
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EPC2103ENGRT EPC2103ENGRT EPC EPC2103_datasheet.pdf Description: GANFET 2N-CH 80V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2103ENGRT EPC2103ENGRT EPC EPC2103_datasheet.pdf Description: GANFET 2N-CH 80V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Produkt ist nicht verfügbar
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EPC2104 EPC2104 EPC EPC2104_datasheet.pdf Description: MOSFET 2N-CH 100V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 500 Stücke
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EPC2104 EPC2104 EPC EPC2104_datasheet.pdf Description: MOSFET 2N-CH 100V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1780 Stücke:
Lieferzeit 10-14 Tag (e)
2+19.85 EUR
10+13.7 EUR
100+10.57 EUR
Mindestbestellmenge: 2 Stücke
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EPC2104ENG EPC2104ENG EPC EPC2104_preliminary.pdf Description: TRANS GAN 2N-CH 100V BUMPED DIE
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
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EPC2104ENGRT EPC2104ENGRT EPC EPC2104_datasheet.pdf Description: GANFET 2NCH 100V 23A DIE
Produkt ist nicht verfügbar
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EPC2104ENGRT EPC2104ENGRT EPC EPC2104_datasheet.pdf Description: GANFET 2NCH 100V 23A DIE
Produkt ist nicht verfügbar
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EPC2105 EPC2105 EPC EPC2105_datasheet.pdf Description: MOSFET 2N-CH 80V 9.5A/38A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
500+9.65 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2105 EPC2105 EPC EPC2105_datasheet.pdf Description: MOSFET 2N-CH 80V 9.5A/38A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1364 Stücke:
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2+20.75 EUR
10+14.3 EUR
100+10.66 EUR
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EPC2105ENG EPC2105ENG EPC EPC2105_preliminary.pdf Description: TRANS GAN 2N-CH 80V BUMPED DIE
Produkt ist nicht verfügbar
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EPC2105ENGRT EPC2105ENGRT EPC EPC2105_datasheet.pdf Description: GANFET 2NCH 80V 9.5A DIE
Produkt ist nicht verfügbar
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EPC2105ENGRT EPC2105ENGRT EPC EPC2105_datasheet.pdf Description: GANFET 2NCH 80V 9.5A DIE
Produkt ist nicht verfügbar
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EPC2106 EPC2106 EPC EPC2106_datasheet.pdf GaN FETs EPC eGaN Dual FET,100 V, 70 milliohm at 5 V, BGA 1.35 x 1.35
auf Bestellung 2090 Stücke:
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1+5.11 EUR
10+3.31 EUR
100+2.26 EUR
500+1.83 EUR
1000+1.71 EUR
2500+1.52 EUR
5000+1.45 EUR
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EPC2106 EPC2106 EPC EPC2106_datasheet.pdf Description: MOSFET 2N-CH 100V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 92500 Stücke:
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2500+1.52 EUR
5000+1.43 EUR
7500+1.39 EUR
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EPC2106 EPC2106 EPC EPC2106_datasheet.pdf Description: MOSFET 2N-CH 100V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 94914 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.09 EUR
10+3.28 EUR
100+2.26 EUR
500+1.82 EUR
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EPC2106ENGRT EPC2106ENGRT EPC EPC2106_datasheet.pdf Description: GANFET 2N-CH 100V 1.7A DIE
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Drain to Source Voltage (Vdss): 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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EPC2106ENGRT EPC2106ENGRT EPC EPC2106_datasheet.pdf Description: GANFET 2N-CH 100V 1.7A DIE
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Drain to Source Voltage (Vdss): 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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EPC2107 EPC2107 EPC EPC2107_datasheet.pdf Description: MOSFET 3N-CH 100V 9BGA
Part Status: Active
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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2500+1.57 EUR
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EPC2107 EPC2107 EPC EPC2107_datasheet.pdf Description: MOSFET 3N-CH 100V 9BGA
Part Status: Active
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Packaging: Cut Tape (CT)
auf Bestellung 5068 Stücke:
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4+5.24 EUR
10+3.38 EUR
100+2.33 EUR
500+1.92 EUR
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EPC2107ENGRT EPC2107ENGRT EPC EPC2107_preliminary.pdf Description: TRANS GAN 3N-CH 100V BUMPED DIE
auf Bestellung 4617 Stücke:
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EPC2107ENGRT EPC2107ENGRT EPC EPC2107_preliminary.pdf Description: TRANS GAN 3N-CH 100V BUMPED DIE
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 Mindestbestellmenge: 1000 Stücke
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EPC2107ENGRT EPC2107ENGRT EPC EPC2107_preliminary.pdf Description: TRANS GAN 3N-CH 100V BUMPED DIE
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EPC2108 EPC2108 EPC EPC2108_datasheet.pdf Description: MOSFET 3N-CH 60V/100V 9BGA
Part Status: Obsolete
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 60V, 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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EPC2108 EPC2108 EPC EPC2108_datasheet.pdf Description: MOSFET 3N-CH 60V/100V 9BGA
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 60V, 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
auf Bestellung 636 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.63 EUR
10+2.99 EUR
100+2.05 EUR
500+1.64 EUR
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EPC2108ENGRT EPC2108ENGRT EPC EPC2108_preliminary.pdf Description: TRANS GAN 3N-CH BUMPED DIE
auf Bestellung 4840 Stücke:
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EPC2108ENGRT EPC2108ENGRT EPC EPC2108_preliminary.pdf Description: TRANS GAN 3N-CH BUMPED DIE
auf Bestellung 4690 Stücke:
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EPC2108ENGRT EPC2108ENGRT EPC EPC2108_preliminary.pdf Description: TRANS GAN 3N-CH BUMPED DIE
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EPC2110 EPC2110 EPC EPC2110_datasheet.pdf Description: MOSFET 2N-CH 120V 3.4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: Die
auf Bestellung 10000 Stücke:
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2500+1.93 EUR
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EPC2110 EPC2110 EPC EPC2110_datasheet.pdf Description: MOSFET 2N-CH 120V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: Die
auf Bestellung 12120 Stücke:
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4+6.18 EUR
10+4.02 EUR
100+2.78 EUR
500+2.26 EUR
1000+2.09 EUR
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EPC2110 EPC2110 EPC EPC2110_datasheet.pdf GaN FETs EPC eGaN Dual FET, Common Source, 120 V, 110 milliohm at 5 V, BGA 1.35 x 1.35
Produkt ist nicht verfügbar
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EPC2110ENGRT EPC2110ENGRT EPC epc2110_datasheet.pdf Description: GAN TRANS 2N-CH 120V BUMPED DIE
auf Bestellung 11681 Stücke:
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EPC2110ENGRT EPC2110ENGRT EPC epc2110_datasheet.pdf Description: GAN TRANS 2N-CH 120V BUMPED DIE
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 2500 Stücke
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EPC2111 EPC2111 EPC EPC2111_datasheet.pdf Description: MOSFET 2N-CH 30V 16A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 595pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA, 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 15000 Stücke:
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2500+2.73 EUR
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EPC2111 EPC2111 EPC EPC2111_datasheet.pdf Description: MOSFET 2N-CH 30V 16A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 595pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA, 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 15523 Stücke:
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3+8.35 EUR
10+5.52 EUR
100+3.9 EUR
500+3.2 EUR
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EPC2111ENGRT EPC2111ENGRT EPC EPC2111_datasheet.pdf Description: GAN TRANS ASYMMETRICAL HALF BRID
auf Bestellung 6000 Stücke:
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 Mindestbestellmenge: 1000 Stücke
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EPC2111ENGRT EPC2111ENGRT EPC EPC2111_datasheet.pdf Description: GAN TRANS ASYMMETRICAL HALF BRID
auf Bestellung 6776 Stücke:
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EPC2088 EPC2088_datasheet.pdf
EPC2088
Hersteller: EPC
Description: TRANS GAN 100V .0032OHM BMP DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 50 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+3.65 EUR
2000+3.45 EUR
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EPC2088 EPC2088_datasheet.pdf
EPC2088
Hersteller: EPC
Description: TRANS GAN 100V .0032OHM BMP DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 50 V
auf Bestellung 34776 Stücke:
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AnzahlPrivatkunde
3+9.92 EUR
10+6.6 EUR
100+4.72 EUR
500+4.22 EUR
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EPC2090 EPC2090_datasheet.pdf
EPC2090
Hersteller: EPC
GaN FETs 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP
auf Bestellung 1901 Stücke:
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AnzahlPrivatkunde
1+7.52 EUR
10+4.96 EUR
100+3.47 EUR
500+2.89 EUR
2500+2.45 EUR
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EPC2091 EPC2091_datasheet.pdf
EPC2091
Hersteller: EPC
GaN FETs 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP
auf Bestellung 800 Stücke:
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AnzahlPrivatkunde
1+17.53 EUR
10+12.02 EUR
100+8.96 EUR
1000+7.63 EUR
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EPC2092
EPC2092
Hersteller: EPC
GaN FETs 100 V eGaN FET, 3.2 mohm Rdson, 3.725 mm x 1.45 mm, Cu pillar CSP
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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EPC2100 EPC2100_datasheet.pdf
EPC2100
Hersteller: EPC
Description: MOSFET 2N-CH 30V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Active
Produkt ist nicht verfügbar
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EPC2100 EPC2100_datasheet.pdf
EPC2100
Hersteller: EPC
Description: MOSFET 2N-CH 30V 10A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.4 EUR
10+13.4 EUR
100+10.01 EUR
Mindestbestellmenge: 2 Stücke
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EPC2100ENG EPC2106_preliminary.pdf
EPC2100ENG
Hersteller: EPC
Description: TRANS GAN 2N-CH 30V BUMPED DIE
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 10 Stücke
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EPC2100ENGRT EPC2100_datasheet.pdf
EPC2100ENGRT
Hersteller: EPC
Description: GANFET 2 N-CH 30V 9.5A/38A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2100ENGRT EPC2100_datasheet.pdf
EPC2100ENGRT
Hersteller: EPC
Description: GANFET 2 N-CH 30V 9.5A/38A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2101 EPC2101_datasheet.pdf
EPC2101
Hersteller: EPC
Description: MOSFET 2N-CH 60V 9.5A/38A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
500+9 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2101 EPC2101_datasheet.pdf
EPC2101
Hersteller: EPC
Description: MOSFET 2N-CH 60V 9.5A/38A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 563 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.12 EUR
10+13.2 EUR
100+11.01 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2101ENG EPC2101_preliminary.pdf
EPC2101ENG
Hersteller: EPC
Description: TRANS GAN 2N-CH 60V BUMPED DIE
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2101ENGRT EPC2101_datasheet.pdf
EPC2101ENGRT
Hersteller: EPC
Description: GANFET 2N-CH 60V 9.5A/38A DIE
Part Status: Discontinued at Digi-Key
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Drain to Source Voltage (Vdss): 60V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2101ENGRT EPC2101_datasheet.pdf
EPC2101ENGRT
Hersteller: EPC
Description: GANFET 2N-CH 60V 9.5A/38A DIE
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Drain to Source Voltage (Vdss): 60V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2102 EPC2102_datasheet.pdf
EPC2102
Hersteller: EPC
Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1378 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.39 EUR
10+12.67 EUR
100+10.46 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2102 EPC2102_datasheet.pdf
EPC2102
Hersteller: EPC
Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
500+8.54 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2102 EPC2102_datasheet.pdf
EPC2102
Hersteller: EPC
GaN FETs EPC eGaN Symetrical Half Bridge,60 V, 4.9 milliohm at 5 V, BGA 6.05 x 2.3
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2102ENG EPC2102_preliminary.pdf
EPC2102ENG
Hersteller: EPC
Description: TRANS GAN 2N-CH 60V BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2102ENGRT EPC2102_datasheet.pdf
EPC2102ENGRT
Hersteller: EPC
Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2102ENGRT EPC2102_datasheet.pdf
EPC2102ENGRT
Hersteller: EPC
Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2103 EPC2103_datasheet.pdf
EPC2103
Hersteller: EPC
Description: MOSFET 2N-CH 80V 28A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 7834 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.65 EUR
10+14.27 EUR
100+11.11 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2103 EPC2103_datasheet.pdf
EPC2103
Hersteller: EPC
Description: MOSFET 2N-CH 80V 28A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
500+9.13 EUR
1000+9.08 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2103ENG EPC2103_datasheet.pdf
EPC2103ENG
Hersteller: EPC
Description: GAN TRANS 2N-CH 80V BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2103ENGRT EPC2103_datasheet.pdf
EPC2103ENGRT
Hersteller: EPC
Description: GANFET 2N-CH 80V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2103ENGRT EPC2103_datasheet.pdf
EPC2103ENGRT
Hersteller: EPC
Description: GANFET 2N-CH 80V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2104 EPC2104_datasheet.pdf
EPC2104
Hersteller: EPC
Description: MOSFET 2N-CH 100V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2104 EPC2104_datasheet.pdf
EPC2104
Hersteller: EPC
Description: MOSFET 2N-CH 100V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1780 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.85 EUR
10+13.7 EUR
100+10.57 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2104ENG EPC2104_preliminary.pdf
EPC2104ENG
Hersteller: EPC
Description: TRANS GAN 2N-CH 100V BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2104ENGRT EPC2104_datasheet.pdf
EPC2104ENGRT
Hersteller: EPC
Description: GANFET 2NCH 100V 23A DIE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2104ENGRT EPC2104_datasheet.pdf
EPC2104ENGRT
Hersteller: EPC
Description: GANFET 2NCH 100V 23A DIE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2105 EPC2105_datasheet.pdf
EPC2105
Hersteller: EPC
Description: MOSFET 2N-CH 80V 9.5A/38A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
500+9.65 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2105 EPC2105_datasheet.pdf
EPC2105
Hersteller: EPC
Description: MOSFET 2N-CH 80V 9.5A/38A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1364 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.75 EUR
10+14.3 EUR
100+10.66 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2105ENG EPC2105_preliminary.pdf
EPC2105ENG
Hersteller: EPC
Description: TRANS GAN 2N-CH 80V BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2105ENGRT EPC2105_datasheet.pdf
EPC2105ENGRT
Hersteller: EPC
Description: GANFET 2NCH 80V 9.5A DIE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2105ENGRT EPC2105_datasheet.pdf
EPC2105ENGRT
Hersteller: EPC
Description: GANFET 2NCH 80V 9.5A DIE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2106 EPC2106_datasheet.pdf
EPC2106
Hersteller: EPC
GaN FETs EPC eGaN Dual FET,100 V, 70 milliohm at 5 V, BGA 1.35 x 1.35
auf Bestellung 2090 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+5.11 EUR
10+3.31 EUR
100+2.26 EUR
500+1.83 EUR
1000+1.71 EUR
2500+1.52 EUR
5000+1.45 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2106 EPC2106_datasheet.pdf
EPC2106
Hersteller: EPC
Description: MOSFET 2N-CH 100V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 92500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.52 EUR
5000+1.43 EUR
7500+1.39 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2106 EPC2106_datasheet.pdf
EPC2106
Hersteller: EPC
Description: MOSFET 2N-CH 100V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 94914 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.09 EUR
10+3.28 EUR
100+2.26 EUR
500+1.82 EUR
1000+1.7 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2106ENGRT EPC2106_datasheet.pdf
EPC2106ENGRT
Hersteller: EPC
Description: GANFET 2N-CH 100V 1.7A DIE
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Drain to Source Voltage (Vdss): 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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EPC2106ENGRT EPC2106_datasheet.pdf
EPC2106ENGRT
Hersteller: EPC
Description: GANFET 2N-CH 100V 1.7A DIE
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Drain to Source Voltage (Vdss): 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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EPC2107 EPC2107_datasheet.pdf
EPC2107
Hersteller: EPC
Description: MOSFET 3N-CH 100V 9BGA
Part Status: Active
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
2500+1.57 EUR
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EPC2107 EPC2107_datasheet.pdf
EPC2107
Hersteller: EPC
Description: MOSFET 3N-CH 100V 9BGA
Part Status: Active
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Packaging: Cut Tape (CT)
auf Bestellung 5068 Stücke:
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AnzahlPrivatkunde
4+5.24 EUR
10+3.38 EUR
100+2.33 EUR
500+1.92 EUR
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EPC2107ENGRT EPC2107_preliminary.pdf
EPC2107ENGRT
Hersteller: EPC
Description: TRANS GAN 3N-CH 100V BUMPED DIE
auf Bestellung 4617 Stücke:
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EPC2107ENGRT EPC2107_preliminary.pdf
EPC2107ENGRT
Hersteller: EPC
Description: TRANS GAN 3N-CH 100V BUMPED DIE
auf Bestellung 4000 Stücke:
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Mindestbestellmenge: 1000 Stücke
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EPC2107ENGRT EPC2107_preliminary.pdf
EPC2107ENGRT
Hersteller: EPC
Description: TRANS GAN 3N-CH 100V BUMPED DIE
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EPC2108 EPC2108_datasheet.pdf
EPC2108
Hersteller: EPC
Description: MOSFET 3N-CH 60V/100V 9BGA
Part Status: Obsolete
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 60V, 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Produkt ist nicht verfügbar
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EPC2108 EPC2108_datasheet.pdf
EPC2108
Hersteller: EPC
Description: MOSFET 3N-CH 60V/100V 9BGA
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 60V, 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
auf Bestellung 636 Stücke:
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AnzahlPrivatkunde
5+4.63 EUR
10+2.99 EUR
100+2.05 EUR
500+1.64 EUR
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EPC2108ENGRT EPC2108_preliminary.pdf
EPC2108ENGRT
Hersteller: EPC
Description: TRANS GAN 3N-CH BUMPED DIE
auf Bestellung 4840 Stücke:
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EPC2108ENGRT EPC2108_preliminary.pdf
EPC2108ENGRT
Hersteller: EPC
Description: TRANS GAN 3N-CH BUMPED DIE
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EPC2108ENGRT EPC2108_preliminary.pdf
EPC2108ENGRT
Hersteller: EPC
Description: TRANS GAN 3N-CH BUMPED DIE
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EPC2110 EPC2110_datasheet.pdf
EPC2110
Hersteller: EPC
Description: MOSFET 2N-CH 120V 3.4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: Die
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2500+1.93 EUR
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EPC2110 EPC2110_datasheet.pdf
EPC2110
Hersteller: EPC
Description: MOSFET 2N-CH 120V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: Die
auf Bestellung 12120 Stücke:
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4+6.18 EUR
10+4.02 EUR
100+2.78 EUR
500+2.26 EUR
1000+2.09 EUR
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EPC2110 EPC2110_datasheet.pdf
EPC2110
Hersteller: EPC
GaN FETs EPC eGaN Dual FET, Common Source, 120 V, 110 milliohm at 5 V, BGA 1.35 x 1.35
Produkt ist nicht verfügbar
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EPC2110ENGRT epc2110_datasheet.pdf
EPC2110ENGRT
Hersteller: EPC
Description: GAN TRANS 2N-CH 120V BUMPED DIE
auf Bestellung 11681 Stücke:
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EPC2110ENGRT epc2110_datasheet.pdf
EPC2110ENGRT
Hersteller: EPC
Description: GAN TRANS 2N-CH 120V BUMPED DIE
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EPC2111 EPC2111_datasheet.pdf
EPC2111
Hersteller: EPC
Description: MOSFET 2N-CH 30V 16A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 595pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA, 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Active
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AnzahlPrivatkunde
2500+2.73 EUR
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EPC2111 EPC2111_datasheet.pdf
EPC2111
Hersteller: EPC
Description: MOSFET 2N-CH 30V 16A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 595pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA, 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 15523 Stücke:
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AnzahlPrivatkunde
3+8.35 EUR
10+5.52 EUR
100+3.9 EUR
500+3.2 EUR
1000+2.99 EUR
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EPC2111ENGRT EPC2111_datasheet.pdf
EPC2111ENGRT
Hersteller: EPC
Description: GAN TRANS ASYMMETRICAL HALF BRID
auf Bestellung 6000 Stücke:
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Mindestbestellmenge: 1000 Stücke
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EPC2111ENGRT EPC2111_datasheet.pdf
EPC2111ENGRT
Hersteller: EPC
Description: GAN TRANS ASYMMETRICAL HALF BRID
auf Bestellung 6776 Stücke:
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