| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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EPC2067 | EPC |
 Description: TRANS GAN .0015OHM 40V 14LGAPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 69A (Ta) Rds On (Max) @ Id, Vgs: 1.55mOhm @ 37A, 5V Vgs(th) (Max) @ Id: 2.5V @ 18mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3267 pF @ 20 V |
auf Bestellung 1424 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2069 | EPC |
GaN FETs EPC eGaN FET,40 V, 2.25 milliohm at 5 V, LGA 3.25 x 3.25 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2069 | EPC |
Description: GAN FET 40V .002OHM 8BUMP DIE Packaging: Cut Tape (CT) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Part Status: Not For New Designs Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 40 V |
auf Bestellung 8111 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2069 | EPC |
Description: GAN FET 40V .002OHM 8BUMP DIE Packaging: Tape & Reel (TR) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Part Status: Not For New Designs Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 40 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2070 | EPC |
Description: TRANS GAN DIE 100V .022OHM Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 5V Vgs(th) (Max) @ Id: 2.5V @ 1.5mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V |
auf Bestellung 1817 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2070 | EPC |
GaN FETs EPC eGaN FET,100 V, 23 milliohm at 5 V, BGA 1.3 x 0.85 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2070 | EPC |
Description: TRANS GAN DIE 100V .022OHM Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 5V Vgs(th) (Max) @ Id: 2.5V @ 1.5mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2071 | EPC |
GaN FETs EPC eGaN FET,100 V, 2.2 milliohm at 5 V, LGA 4.45 x 2.3 |
auf Bestellung 460 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2071 | EPC |
Description: TRANS GAN 100V .0022OHM 21BMPD Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Ta) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 13mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3931 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
auf Bestellung 13000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2071 | EPC |
Description: TRANS GAN 100V .0022OHM 21BMPD Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Ta) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 13mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3931 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
auf Bestellung 14259 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2088 | EPC |
Description: TRANS GAN 100V .0032OHM BMP DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2088 | EPC |
Description: TRANS GAN 100V .0032OHM BMP DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 50 V |
auf Bestellung 138 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2088 | EPC |
GaN FETs EPC eGaN FET,100 V, 3.2 milliohm at 5 V, LGA 3.5 x 2.0 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2090 | EPC |
GaN FETs 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP |
auf Bestellung 2139 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2091 | EPC |
GaN FETs 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2092 | EPC | GaN FETs 100 V eGaN FET, 3.2 mohm Rdson, 3.725 mm x 1.45 mm, Cu pillar CSP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2100 | EPC |
Description: MOSFET 2N-CH 30V 10A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA Supplier Device Package: Die Part Status: Active |
auf Bestellung 220 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2100 | EPC |
Description: MOSFET 2N-CH 30V 10A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA Supplier Device Package: Die Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| EPC2100 | EPC |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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EPC2100ENG | EPC |
Description: TRANS GAN 2N-CH 30V BUMPED DIE |
auf Bestellung 270 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2100ENGRT | EPC |
Description: MOSFET 2N-CH 30V 10A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA Supplier Device Package: Die Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2101 | EPC |
Description: MOSFET 2N-CH 60V 9.5A/38A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA Supplier Device Package: Die Part Status: Active |
auf Bestellung 521 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2101 | EPC |
Description: MOSFET 2N-CH 60V 9.5A/38A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA Supplier Device Package: Die Part Status: Active |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2101ENG | EPC |
Description: TRANS GAN 2N-CH 60V BUMPED DIE |
auf Bestellung 110 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2101ENGRT | EPC |
Description: MOSFET 2N-CH 60V 9.5A/38A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Supplier Device Package: Die Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2102 | EPC |
GaN FETs EPC eGaN Symetrical Half Bridge,60 V, 4.9 milliohm at 5 V, BGA 6.05 x 2.3 |
auf Bestellung 490 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2102 | EPC |
Description: MOSFET 2N-CH 60V 23A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: Die Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2102 | EPC |
Description: MOSFET 2N-CH 60V 23A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: Die Part Status: Active |
auf Bestellung 271 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2102ENG | EPC |
Description: TRANS GAN 2N-CH 60V BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2102ENGRT | EPC |
Description: MOSFET 2N-CH 60V 23A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: Die Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2103 | EPC |
GaN FETs EPC eGaN Symetrical Half Bridge80 V, 5.5 milliohm at 5 V, BGA 6.05 x 2.3 |
auf Bestellung 734 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2103 | EPC |
Description: MOSFET 2N-CH 80V 28A DIE |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2103 | EPC |
Description: MOSFET 2N-CH 80V 28A DIE |
auf Bestellung 2124 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2103ENG | EPC |
Description: GAN TRANS 2N-CH 80V BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2103ENGRT | EPC |
Description: GANFET 2N-CH 80V 23A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 23A Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: Die |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2103ENGRT | EPC |
Description: GANFET 2N-CH 80V 23A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 23A Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: Die |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2104 | EPC |
Description: MOSFET 2N-CH 100V 23A DIE |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2104 | EPC |
Description: MOSFET 2N-CH 100V 23A DIE |
auf Bestellung 2250 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2104ENG | EPC |
Description: TRANS GAN 2N-CH 100V BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2104ENGRT | EPC |
Description: GANFET 2NCH 100V 23A DIE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2104ENGRT | EPC |
Description: GANFET 2NCH 100V 23A DIE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2105 | EPC |
Description: MOSFET 2N-CH 80V 9.5A/38A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA Supplier Device Package: Die Part Status: Active |
auf Bestellung 1364 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2105 | EPC |
Description: MOSFET 2N-CH 80V 9.5A/38A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA Supplier Device Package: Die Part Status: Active |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2105ENG | EPC |
Description: TRANS GAN 2N-CH 80V BUMPED DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2105ENGRT | EPC |
Description: GANFET 2NCH 80V 9.5A DIE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2105ENGRT | EPC |
Description: GANFET 2NCH 80V 9.5A DIE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2106 | EPC |
Description: MOSFET 2N-CH 100V 1.7A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 600µA Supplier Device Package: Die Part Status: Active |
auf Bestellung 15864 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2106 | EPC |
GaN FETs EPC eGaN Dual FET,100 V, 70 milliohm at 5 V, BGA 1.35 x 1.35 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2106 | EPC |
Description: MOSFET 2N-CH 100V 1.7A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 600µA Supplier Device Package: Die Part Status: Active |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2106ENGRT | EPC |
Description: GANFET 2N-CH 100V 1.7A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 600µA Supplier Device Package: Die |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2106ENGRT | EPC |
Description: GANFET 2N-CH 100V 1.7A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 600µA Supplier Device Package: Die |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2107 | EPC |
Description: MOSFET 3N-CH 100V 9BGA Packaging: Tape & Reel (TR) Package / Case: 9-VFBGA Mounting Type: Surface Mount Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA Supplier Device Package: 9-BGA (1.35x1.35) Part Status: Active |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2107 | EPC |
Description: MOSFET 3N-CH 100V 9BGA Packaging: Cut Tape (CT) Package / Case: 9-VFBGA Mounting Type: Surface Mount Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA Supplier Device Package: 9-BGA (1.35x1.35) Part Status: Active |
auf Bestellung 4858 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2107ENGRT | EPC |
Description: TRANS GAN 3N-CH 100V BUMPED DIE |
auf Bestellung 4617 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2107ENGRT | EPC |
Description: TRANS GAN 3N-CH 100V BUMPED DIE |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2107ENGRT | EPC |
Description: TRANS GAN 3N-CH 100V BUMPED DIE |
auf Bestellung 4617 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2108 | EPC |
Description: MOSFET 3N-CH 60V/100V 9BGA Packaging: Cut Tape (CT) Package / Case: 9-VFBGA Mounting Type: Surface Mount Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V, 100V Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA Supplier Device Package: 9-BGA (1.35x1.35) Part Status: Obsolete |
auf Bestellung 151 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2108 | EPC |
Description: MOSFET 3N-CH 60V/100V 9BGA Packaging: Tape & Reel (TR) Package / Case: 9-VFBGA Mounting Type: Surface Mount Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V, 100V Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA Supplier Device Package: 9-BGA (1.35x1.35) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2108ENGRT | EPC |
Description: TRANS GAN 3N-CH BUMPED DIE |
auf Bestellung 4690 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EPC2108ENGRT | EPC |
Description: TRANS GAN 3N-CH BUMPED DIE |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| EPC2067 |
|
Hersteller: EPC
Description: TRANS GAN .0015OHM 40V 14LGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Ta)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 37A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 18mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3267 pF @ 20 V
Description: TRANS GAN .0015OHM 40V 14LGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Ta)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 37A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 18mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3267 pF @ 20 V
auf Bestellung 1424 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.22 EUR |
| 10+ | 7.51 EUR |
| 50+ | 5.9 EUR |
| 100+ | 5.39 EUR |
| 500+ | 4.93 EUR |
| EPC2069 |
|
Hersteller: EPC
GaN FETs EPC eGaN FET,40 V, 2.25 milliohm at 5 V, LGA 3.25 x 3.25
GaN FETs EPC eGaN FET,40 V, 2.25 milliohm at 5 V, LGA 3.25 x 3.25
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.4 EUR |
| 10+ | 3.81 EUR |
| 100+ | 3.45 EUR |
| 500+ | 2.94 EUR |
| 1000+ | 2.63 EUR |
| 2000+ | 2.5 EUR |
| EPC2069 |
|
Hersteller: EPC
Description: GAN FET 40V .002OHM 8BUMP DIE
Packaging: Cut Tape (CT)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Part Status: Not For New Designs
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Description: GAN FET 40V .002OHM 8BUMP DIE
Packaging: Cut Tape (CT)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Part Status: Not For New Designs
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
auf Bestellung 8111 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.59 EUR |
| 10+ | 10.78 EUR |
| 100+ | 8.98 EUR |
| 500+ | 7.93 EUR |
| EPC2069 |
|
Hersteller: EPC
Description: GAN FET 40V .002OHM 8BUMP DIE
Packaging: Tape & Reel (TR)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Part Status: Not For New Designs
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Description: GAN FET 40V .002OHM 8BUMP DIE
Packaging: Tape & Reel (TR)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Part Status: Not For New Designs
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 7.14 EUR |
| 2000+ | 6.69 EUR |
| EPC2070 |
|
Hersteller: EPC
Description: TRANS GAN DIE 100V .022OHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Description: TRANS GAN DIE 100V .022OHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
auf Bestellung 1817 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.37 EUR |
| 10+ | 2.14 EUR |
| 50+ | 1.61 EUR |
| 100+ | 1.43 EUR |
| 500+ | 1.13 EUR |
| EPC2070 |
|
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 23 milliohm at 5 V, BGA 1.3 x 0.85
GaN FETs EPC eGaN FET,100 V, 23 milliohm at 5 V, BGA 1.3 x 0.85
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2070 |
|
Hersteller: EPC
Description: TRANS GAN DIE 100V .022OHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Description: TRANS GAN DIE 100V .022OHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC2071 |
|
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 2.2 milliohm at 5 V, LGA 4.45 x 2.3
GaN FETs EPC eGaN FET,100 V, 2.2 milliohm at 5 V, LGA 4.45 x 2.3
auf Bestellung 460 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.46 EUR |
| 10+ | 7.27 EUR |
| 100+ | 6.68 EUR |
| 500+ | 6.09 EUR |
| 1000+ | 5.27 EUR |
| 2000+ | 5.22 EUR |
| EPC2071 |
|
Hersteller: EPC
Description: TRANS GAN 100V .0022OHM 21BMPD
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3931 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Description: TRANS GAN 100V .0022OHM 21BMPD
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3931 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 13000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 5.7 EUR |
| 2000+ | 5.69 EUR |
| EPC2071 |
|
Hersteller: EPC
Description: TRANS GAN 100V .0022OHM 21BMPD
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3931 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Description: TRANS GAN 100V .0022OHM 21BMPD
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3931 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 14259 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.55 EUR |
| 10+ | 9.87 EUR |
| 100+ | 7.2 EUR |
| 500+ | 6.96 EUR |
| EPC2088 |
|
Hersteller: EPC
Description: TRANS GAN 100V .0032OHM BMP DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 50 V
Description: TRANS GAN 100V .0032OHM BMP DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC2088 |
|
Hersteller: EPC
Description: TRANS GAN 100V .0032OHM BMP DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 50 V
Description: TRANS GAN 100V .0032OHM BMP DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 50 V
auf Bestellung 138 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.61 EUR |
| 10+ | 7.06 EUR |
| 50+ | 5.53 EUR |
| 100+ | 5.05 EUR |
| EPC2088 |
|
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 3.2 milliohm at 5 V, LGA 3.5 x 2.0
GaN FETs EPC eGaN FET,100 V, 3.2 milliohm at 5 V, LGA 3.5 x 2.0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2090 |
|
Hersteller: EPC
GaN FETs 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP
GaN FETs 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP
auf Bestellung 2139 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.69 EUR |
| 10+ | 4.41 EUR |
| 100+ | 3.09 EUR |
| 500+ | 2.59 EUR |
| 1000+ | 2.53 EUR |
| 2500+ | 2.34 EUR |
| 5000+ | 2.24 EUR |
| EPC2091 |
|
Hersteller: EPC
GaN FETs 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP
GaN FETs 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.6 EUR |
| 10+ | 10.7 EUR |
| 100+ | 8.03 EUR |
| 500+ | 8 EUR |
| 1000+ | 7.27 EUR |
| EPC2092 |
Hersteller: EPC
GaN FETs 100 V eGaN FET, 3.2 mohm Rdson, 3.725 mm x 1.45 mm, Cu pillar CSP
GaN FETs 100 V eGaN FET, 3.2 mohm Rdson, 3.725 mm x 1.45 mm, Cu pillar CSP
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC2100 |
|
Hersteller: EPC
Description: MOSFET 2N-CH 30V 10A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Active
Description: MOSFET 2N-CH 30V 10A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.63 EUR |
| 10+ | 14.26 EUR |
| 100+ | 10.66 EUR |
| EPC2100 |
|
Hersteller: EPC
Description: MOSFET 2N-CH 30V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Active
Description: MOSFET 2N-CH 30V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2100ENG |
|
Hersteller: EPC
Description: TRANS GAN 2N-CH 30V BUMPED DIE
Description: TRANS GAN 2N-CH 30V BUMPED DIE
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2100ENGRT |
|
Hersteller: EPC
Description: MOSFET 2N-CH 30V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Active
Description: MOSFET 2N-CH 30V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC2101 |
|
Hersteller: EPC
Description: MOSFET 2N-CH 60V 9.5A/38A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA
Supplier Device Package: Die
Part Status: Active
Description: MOSFET 2N-CH 60V 9.5A/38A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 521 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.07 EUR |
| 10+ | 14.57 EUR |
| 100+ | 10.89 EUR |
| EPC2101 |
|
Hersteller: EPC
Description: MOSFET 2N-CH 60V 9.5A/38A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA
Supplier Device Package: Die
Part Status: Active
Description: MOSFET 2N-CH 60V 9.5A/38A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 9.32 EUR |
| EPC2101ENG |
|
Hersteller: EPC
Description: TRANS GAN 2N-CH 60V BUMPED DIE
Description: TRANS GAN 2N-CH 60V BUMPED DIE
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2101ENGRT |
|
Hersteller: EPC
Description: MOSFET 2N-CH 60V 9.5A/38A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key
Description: MOSFET 2N-CH 60V 9.5A/38A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2102 |
|
Hersteller: EPC
GaN FETs EPC eGaN Symetrical Half Bridge,60 V, 4.9 milliohm at 5 V, BGA 6.05 x 2.3
GaN FETs EPC eGaN Symetrical Half Bridge,60 V, 4.9 milliohm at 5 V, BGA 6.05 x 2.3
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 19.09 EUR |
| 10+ | 10.7 EUR |
| 100+ | 10.38 EUR |
| 500+ | 10.17 EUR |
| 1000+ | 8.82 EUR |
| EPC2102 |
|
Hersteller: EPC
Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC2102 |
|
Hersteller: EPC
Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 271 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.36 EUR |
| 10+ | 14.78 EUR |
| 50+ | 11.97 EUR |
| 100+ | 11.61 EUR |
| EPC2102ENG |
|
Hersteller: EPC
Description: TRANS GAN 2N-CH 60V BUMPED DIE
Description: TRANS GAN 2N-CH 60V BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC2102ENGRT |
|
Hersteller: EPC
Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key
Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2103 |
|
Hersteller: EPC
GaN FETs EPC eGaN Symetrical Half Bridge80 V, 5.5 milliohm at 5 V, BGA 6.05 x 2.3
GaN FETs EPC eGaN Symetrical Half Bridge80 V, 5.5 milliohm at 5 V, BGA 6.05 x 2.3
auf Bestellung 734 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.46 EUR |
| 10+ | 10.33 EUR |
| 100+ | 9.94 EUR |
| 500+ | 9.78 EUR |
| 1000+ | 8.43 EUR |
| EPC2103 |
|
Hersteller: EPC
Description: MOSFET 2N-CH 80V 28A DIE
Description: MOSFET 2N-CH 80V 28A DIE
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 9.35 EUR |
| 1500+ | 9.31 EUR |
| EPC2103 |
|
Hersteller: EPC
Description: MOSFET 2N-CH 80V 28A DIE
Description: MOSFET 2N-CH 80V 28A DIE
auf Bestellung 2124 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.17 EUR |
| 10+ | 14.63 EUR |
| 50+ | 11.83 EUR |
| 100+ | 11.4 EUR |
| EPC2103ENG |
|
Hersteller: EPC
Description: GAN TRANS 2N-CH 80V BUMPED DIE
Description: GAN TRANS 2N-CH 80V BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC2103ENGRT |
|
Hersteller: EPC
Description: GANFET 2N-CH 80V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Description: GANFET 2N-CH 80V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2103ENGRT |
|
Hersteller: EPC
Description: GANFET 2N-CH 80V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Description: GANFET 2N-CH 80V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2104 |
|
Hersteller: EPC
Description: MOSFET 2N-CH 100V 23A DIE
Description: MOSFET 2N-CH 100V 23A DIE
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 9.73 EUR |
| EPC2104 |
|
Hersteller: EPC
Description: MOSFET 2N-CH 100V 23A DIE
Description: MOSFET 2N-CH 100V 23A DIE
auf Bestellung 2250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.91 EUR |
| 10+ | 15.16 EUR |
| 50+ | 12.28 EUR |
| 100+ | 11.91 EUR |
| EPC2104ENG |
|
Hersteller: EPC
Description: TRANS GAN 2N-CH 100V BUMPED DIE
Description: TRANS GAN 2N-CH 100V BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC2104ENGRT |
|
Hersteller: EPC
Description: GANFET 2NCH 100V 23A DIE
Description: GANFET 2NCH 100V 23A DIE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2104ENGRT |
|
Hersteller: EPC
Description: GANFET 2NCH 100V 23A DIE
Description: GANFET 2NCH 100V 23A DIE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2105 |
|
Hersteller: EPC
Description: MOSFET 2N-CH 80V 9.5A/38A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA
Supplier Device Package: Die
Part Status: Active
Description: MOSFET 2N-CH 80V 9.5A/38A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1364 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.75 EUR |
| 10+ | 14.3 EUR |
| 100+ | 10.66 EUR |
| EPC2105 |
|
Hersteller: EPC
Description: MOSFET 2N-CH 80V 9.5A/38A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA
Supplier Device Package: Die
Part Status: Active
Description: MOSFET 2N-CH 80V 9.5A/38A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 9.65 EUR |
| EPC2105ENG |
|
Hersteller: EPC
Description: TRANS GAN 2N-CH 80V BUMPED DIE
Description: TRANS GAN 2N-CH 80V BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC2105ENGRT |
|
Hersteller: EPC
Description: GANFET 2NCH 80V 9.5A DIE
Description: GANFET 2NCH 80V 9.5A DIE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2105ENGRT |
|
Hersteller: EPC
Description: GANFET 2NCH 80V 9.5A DIE
Description: GANFET 2NCH 80V 9.5A DIE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2106 |
|
Hersteller: EPC
Description: MOSFET 2N-CH 100V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Description: MOSFET 2N-CH 100V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 15864 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.53 EUR |
| 10+ | 3.57 EUR |
| 50+ | 2.73 EUR |
| 100+ | 2.45 EUR |
| 500+ | 1.98 EUR |
| EPC2106 |
|
Hersteller: EPC
GaN FETs EPC eGaN Dual FET,100 V, 70 milliohm at 5 V, BGA 1.35 x 1.35
GaN FETs EPC eGaN Dual FET,100 V, 70 milliohm at 5 V, BGA 1.35 x 1.35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2106 |
|
Hersteller: EPC
Description: MOSFET 2N-CH 100V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Description: MOSFET 2N-CH 100V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.65 EUR |
| 7500+ | 1.51 EUR |
| EPC2106ENGRT |
|
Hersteller: EPC
Description: GANFET 2N-CH 100V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Description: GANFET 2N-CH 100V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2106ENGRT |
|
Hersteller: EPC
Description: GANFET 2N-CH 100V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Description: GANFET 2N-CH 100V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EPC2107 |
|
Hersteller: EPC
Description: MOSFET 3N-CH 100V 9BGA
Packaging: Tape & Reel (TR)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package: 9-BGA (1.35x1.35)
Part Status: Active
Description: MOSFET 3N-CH 100V 9BGA
Packaging: Tape & Reel (TR)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package: 9-BGA (1.35x1.35)
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 2 EUR |
| 1000+ | 1.84 EUR |
| 1500+ | 1.77 EUR |
| 2500+ | 1.68 EUR |
| EPC2107 |
|
Hersteller: EPC
Description: MOSFET 3N-CH 100V 9BGA
Packaging: Cut Tape (CT)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package: 9-BGA (1.35x1.35)
Part Status: Active
Description: MOSFET 3N-CH 100V 9BGA
Packaging: Cut Tape (CT)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package: 9-BGA (1.35x1.35)
Part Status: Active
auf Bestellung 4858 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.57 EUR |
| 10+ | 3.61 EUR |
| 100+ | 2.48 EUR |
| 500+ | 2 EUR |
| 1000+ | 1.84 EUR |
| EPC2107ENGRT |
|
Hersteller: EPC
Description: TRANS GAN 3N-CH 100V BUMPED DIE
Description: TRANS GAN 3N-CH 100V BUMPED DIE
auf Bestellung 4617 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2107ENGRT |
|
Hersteller: EPC
Description: TRANS GAN 3N-CH 100V BUMPED DIE
Description: TRANS GAN 3N-CH 100V BUMPED DIE
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2107ENGRT |
|
Hersteller: EPC
Description: TRANS GAN 3N-CH 100V BUMPED DIE
Description: TRANS GAN 3N-CH 100V BUMPED DIE
auf Bestellung 4617 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2108 |
|
Hersteller: EPC
Description: MOSFET 3N-CH 60V/100V 9BGA
Packaging: Cut Tape (CT)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V, 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package: 9-BGA (1.35x1.35)
Part Status: Obsolete
Description: MOSFET 3N-CH 60V/100V 9BGA
Packaging: Cut Tape (CT)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V, 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package: 9-BGA (1.35x1.35)
Part Status: Obsolete
auf Bestellung 151 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.02 EUR |
| 10+ | 3.24 EUR |
| 100+ | 2.21 EUR |
| EPC2108 |
|
Hersteller: EPC
Description: MOSFET 3N-CH 60V/100V 9BGA
Packaging: Tape & Reel (TR)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V, 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package: 9-BGA (1.35x1.35)
Part Status: Obsolete
Description: MOSFET 3N-CH 60V/100V 9BGA
Packaging: Tape & Reel (TR)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V, 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package: 9-BGA (1.35x1.35)
Part Status: Obsolete
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EPC2108ENGRT |
|
Hersteller: EPC
Description: TRANS GAN 3N-CH BUMPED DIE
Description: TRANS GAN 3N-CH BUMPED DIE
auf Bestellung 4690 Stücke:
Lieferzeit 10-14 Tag (e)
| EPC2108ENGRT |
|
Hersteller: EPC
Description: TRANS GAN 3N-CH BUMPED DIE
Description: TRANS GAN 3N-CH BUMPED DIE
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)