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EPC2012CENGR EPC2012CENGR EPC EPC2012C_datasheet.pdf Description: TRANS GAN 200V 5A BUMPED DIE
Produkt ist nicht verfügbar
EPC2012CENGR EPC2012CENGR EPC EPC2012C_datasheet.pdf Description: TRANS GAN 200V 5A BUMPED DIE
Produkt ist nicht verfügbar
EPC2013 EPC Description: TRANS GAN 150V 10MO BUMPED DIE
Produkt ist nicht verfügbar
EPC2014 EPC2014 EPC EPC2014_datasheet.pdf Description: GANFET N-CH 40V 10A DIE OUTLINE
Produkt ist nicht verfügbar
EPC2014 EPC2014 EPC EPC2014_datasheet.pdf Description: GANFET N-CH 40V 10A DIE OUTLINE
Produkt ist nicht verfügbar
EPC2014C EPC2014C EPC EPC2014C_datasheet.pdf Description: GANFET N-CH 40V 10A DIE OUTLINE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 20 V
auf Bestellung 53213 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.6 EUR
10+ 2.13 EUR
100+ 1.65 EUR
500+ 1.4 EUR
1000+ 1.14 EUR
Mindestbestellmenge: 7
EPC2014C EPC2014C EPC EPC2014C_datasheet.pdf Description: GANFET N-CH 40V 10A DIE OUTLINE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 20 V
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.08 EUR
5000+ 1.02 EUR
12500+ 0.98 EUR
Mindestbestellmenge: 2500
EPC2015 EPC2015 EPC EPC2015_datasheet.pdf Description: GANFET N-CH 40V 33A DIE OUTLINE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 33A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V
Produkt ist nicht verfügbar
EPC2015 EPC2015 EPC EPC2015_datasheet.pdf Description: GANFET N-CH 40V 33A DIE OUTLINE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 33A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V
Produkt ist nicht verfügbar
EPC2015C EPC2015C EPC EPC2015C_datasheet.pdf Description: GANFET N-CH 40V 53A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 33A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
auf Bestellung 19049 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.6 EUR
10+ 4.7 EUR
100+ 3.8 EUR
500+ 3.72 EUR
Mindestbestellmenge: 4
EPC2015C EPC2015C EPC EPC2015C_datasheet.pdf Description: GANFET N-CH 40V 53A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 33A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+3.72 EUR
Mindestbestellmenge: 2500
EPC2015CENGR EPC2015CENGR EPC EPC2015C_preliminary.pdf Description: TRANS GAN 40V 36A BUMPED DIE
auf Bestellung 3875 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2015CENGR EPC2015CENGR EPC EPC2015C_preliminary.pdf Description: TRANS GAN 40V 36A BUMPED DIE
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2015CENGR EPC2015CENGR EPC EPC2015C_preliminary.pdf Description: TRANS GAN 40V 36A BUMPED DIE
auf Bestellung 3875 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2016 EPC2016 EPC EPC2016_datasheet.pdf Description: TRANS GAN 100V 11A BUMPED DIE
Produkt ist nicht verfügbar
EPC2016 EPC2016 EPC EPC2016_datasheet.pdf Description: TRANS GAN 100V 11A BUMPED DIE
Produkt ist nicht verfügbar
EPC2016 EPC2016 EPC EPC2016_datasheet.pdf Description: TRANS GAN 100V 11A BUMPED DIE
Produkt ist nicht verfügbar
EPC2016C EPC2016C EPC EPC2016C_datasheet.pdf Description: GANFET N-CH 100V 18A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V
auf Bestellung 107500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.9 EUR
5000+ 1.83 EUR
Mindestbestellmenge: 2500
EPC2016C EPC2016C EPC EPC2016C_datasheet.pdf Description: GANFET N-CH 100V 18A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V
auf Bestellung 107880 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.21 EUR
10+ 3.5 EUR
100+ 2.78 EUR
500+ 2.36 EUR
1000+ 2 EUR
Mindestbestellmenge: 5
EPC2018 EPC2018 EPC EPC2018_datasheet.pdf Description: GANFET N-CH 150V 12A DIE
Produkt ist nicht verfügbar
EPC2018 EPC2018 EPC EPC2018_datasheet.pdf Description: GANFET N-CH 150V 12A DIE
Produkt ist nicht verfügbar
EPC2019 EPC2019 EPC EPC2019_datasheet.pdf Description: GANFET N-CH 200V 8.5A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 7A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 288 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 94840 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.44 EUR
10+ 3.72 EUR
100+ 3.01 EUR
500+ 2.95 EUR
Mindestbestellmenge: 4
EPC2019 EPC2019 EPC EPC2019_datasheet.pdf Description: GANFET N-CH 200V 8.5A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 7A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 288 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 94000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.95 EUR
Mindestbestellmenge: 1000
EPC2019ENG EPC2019ENG EPC EPC2019_datasheet.pdf Description: TRANS GAN 200V 8.5A BUMPED DIE
Produkt ist nicht verfügbar
EPC2019ENG EPC2019ENG EPC EPC2019_datasheet.pdf Description: TRANS GAN 200V 8.5A BUMPED DIE
Produkt ist nicht verfügbar
EPC2019ENG EPC2019ENG EPC EPC2019_datasheet.pdf Description: TRANS GAN 200V 8.5A BUMPED DIE
Produkt ist nicht verfügbar
EPC2020 EPC2020 EPC EPC2020_datasheet.pdf Description: GANFET N-CH 60V 90A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 31A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 30 V
auf Bestellung 3706 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.55 EUR
10+ 11.61 EUR
100+ 9.68 EUR
Mindestbestellmenge: 2
EPC2020 EPC2020 EPC EPC2020_datasheet.pdf Description: GANFET N-CH 60V 90A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 31A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
500+8.54 EUR
1000+ 7.68 EUR
Mindestbestellmenge: 500
EPC2020ENG EPC2020ENG EPC EPC2020_preliminary.pdf Description: TRANS GAN 60V 60A BUMPED DIE
auf Bestellung 330 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2020ENGR EPC2020ENGR EPC EPC2020_preliminary.pdf Description: TRANS GAN 60V 60A BUMPED DIE
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2020ENGR EPC2020ENGR EPC EPC2020_preliminary.pdf Description: TRANS GAN 60V 60A BUMPED DIE
auf Bestellung 1915 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2020ENGR EPC2020ENGR EPC EPC2020_preliminary.pdf Description: TRANS GAN 60V 60A BUMPED DIE
auf Bestellung 1915 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2021 EPC2021 EPC EPC2021_datasheet.pdf Description: GANFET N-CH 80V 90A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
auf Bestellung 6866 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.61 EUR
10+ 12.52 EUR
100+ 10.44 EUR
500+ 9.21 EUR
Mindestbestellmenge: 2
EPC2021 EPC2021 EPC EPC2021_datasheet.pdf Description: GANFET N-CH 80V 90A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+8.29 EUR
2000+ 7.77 EUR
Mindestbestellmenge: 1000
EPC2021ENG EPC2021ENG EPC EPC2021_preliminary.pdf Description: TRANS GAN 80V 60A BUMPED DIE
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2021ENGR EPC2021ENGR EPC EPC2021_datasheet.pdf Description: TRANS GAN 80V 60A BUMPED DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 40 V
Produkt ist nicht verfügbar
EPC2022 EPC2022 EPC EPC2022_datasheet.pdf Description: GANFET N-CH 100V 90A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 50 V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+8.38 EUR
2000+ 7.85 EUR
Mindestbestellmenge: 1000
EPC2022 EPC2022 EPC EPC2022_datasheet.pdf Description: GANFET N-CH 100V 90A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 50 V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 3351 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.78 EUR
10+ 12.66 EUR
100+ 10.55 EUR
500+ 9.31 EUR
Mindestbestellmenge: 2
EPC2022ENG EPC2022ENG EPC EPC2022_preliminary.pdf Description: TRANS GAN 100V 60A BUMPED DIE
Produkt ist nicht verfügbar
EPC2022ENGRT EPC2022ENGRT EPC EPC2022_preliminary.pdf Description: TRANS GAN 100V 60A BUMPED DIE
Produkt ist nicht verfügbar
EPC2022ENGRT EPC2022ENGRT EPC EPC2022_preliminary.pdf Description: TRANS GAN 100V 60A BUMPED DIE
Produkt ist nicht verfügbar
EPC2022ENGRT EPC2022ENGRT EPC EPC2022_preliminary.pdf Description: TRANS GAN 100V 60A BUMPED DIE
Produkt ist nicht verfügbar
EPC2023 EPC2023 EPC EPC2023_datasheet.pdf Description: GANFET N-CH 30V 60A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 40A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: Die
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 5643 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.71 EUR
10+ 11.75 EUR
100+ 9.79 EUR
Mindestbestellmenge: 2
EPC2023 EPC2023 EPC EPC2023_datasheet.pdf Description: GANFET N-CH 30V 60A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 40A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: Die
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
500+8.64 EUR
1000+ 7.77 EUR
Mindestbestellmenge: 500
EPC2023ENG EPC2023ENG EPC EPC2023_preliminary.pdf Description: TRANS GAN 30V 60A BUMPED DIE
auf Bestellung 3370 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2023ENGR EPC2023ENGR EPC EPC2023_preliminary.pdf Description: TRANS GAN 30V 60A BUMPED DIE
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2023ENGR EPC2023ENGR EPC EPC2023_preliminary.pdf Description: TRANS GAN 30V 60A BUMPED DIE
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2023ENGR EPC2023ENGR EPC EPC2023_preliminary.pdf Description: TRANS GAN 30V 60A BUMPED DIE
Produkt ist nicht verfügbar
EPC2024 EPC2024 EPC EPC2024_datasheet.pdf Description: GANFET NCH 40V 60A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 37A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 19mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.25 EUR
10+ 11.35 EUR
100+ 9.46 EUR
Mindestbestellmenge: 2
EPC2024 EPC2024 EPC EPC2024_datasheet.pdf Description: GANFET NCH 40V 60A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 37A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 19mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
auf Bestellung 2200 Stücke:
Lieferzeit 10-14 Tag (e)
500+8.35 EUR
1000+ 7.51 EUR
Mindestbestellmenge: 500
EPC2025 EPC Description: GAN TRANS 300V 150MO BUMPED DIE
Produkt ist nicht verfügbar
EPC2025 EPC Description: GAN TRANS 300V 150MO BUMPED DIE
Produkt ist nicht verfügbar
EPC2025ENGR EPC2025ENGR EPC EPC2025_datasheet.pdf Description: TRANS GAN 300V 4A BUMPED DIE
Produkt ist nicht verfügbar
EPC2029 EPC2029 EPC EPC2029_datasheet.pdf Description: GANFET N-CH 80V 48A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 40 V
auf Bestellung 46000 Stücke:
Lieferzeit 10-14 Tag (e)
500+9.16 EUR
1000+ 8.25 EUR
Mindestbestellmenge: 500
EPC2029 EPC2029 EPC EPC2029_datasheet.pdf Description: GANFET N-CH 80V 48A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 40 V
auf Bestellung 46179 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.54 EUR
10+ 12.46 EUR
100+ 10.38 EUR
Mindestbestellmenge: 2
EPC2029ENGR EPC2029ENGR EPC EPC2029_preliminary.pdf Description: TRANS GAN 80V 31A BUMPED DIE
Produkt ist nicht verfügbar
EPC2029ENGRT EPC2029ENGRT EPC EPC2029_preliminary.pdf Description: TRANS GAN 80V 31A BUMPED DIE
auf Bestellung 1807 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2029ENGRT EPC2029ENGRT EPC EPC2029_preliminary.pdf Description: TRANS GAN 80V 31A BUMPED DIE
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2029ENGRT EPC2029ENGRT EPC EPC2029_preliminary.pdf Description: TRANS GAN 80V 31A BUMPED DIE
auf Bestellung 1807 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2030 EPC2030 EPC EPC2030_datasheet.pdf Description: GANFET NCH 40V 31A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
500+7.46 EUR
1000+ 6.71 EUR
2500+ 6.29 EUR
Mindestbestellmenge: 500
EPC2012CENGR EPC2012C_datasheet.pdf
EPC2012CENGR
Hersteller: EPC
Description: TRANS GAN 200V 5A BUMPED DIE
Produkt ist nicht verfügbar
EPC2012CENGR EPC2012C_datasheet.pdf
EPC2012CENGR
Hersteller: EPC
Description: TRANS GAN 200V 5A BUMPED DIE
Produkt ist nicht verfügbar
EPC2013
Hersteller: EPC
Description: TRANS GAN 150V 10MO BUMPED DIE
Produkt ist nicht verfügbar
EPC2014 EPC2014_datasheet.pdf
EPC2014
Hersteller: EPC
Description: GANFET N-CH 40V 10A DIE OUTLINE
Produkt ist nicht verfügbar
EPC2014 EPC2014_datasheet.pdf
EPC2014
Hersteller: EPC
Description: GANFET N-CH 40V 10A DIE OUTLINE
Produkt ist nicht verfügbar
EPC2014C EPC2014C_datasheet.pdf
EPC2014C
Hersteller: EPC
Description: GANFET N-CH 40V 10A DIE OUTLINE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 20 V
auf Bestellung 53213 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.6 EUR
10+ 2.13 EUR
100+ 1.65 EUR
500+ 1.4 EUR
1000+ 1.14 EUR
Mindestbestellmenge: 7
EPC2014C EPC2014C_datasheet.pdf
EPC2014C
Hersteller: EPC
Description: GANFET N-CH 40V 10A DIE OUTLINE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 20 V
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.08 EUR
5000+ 1.02 EUR
12500+ 0.98 EUR
Mindestbestellmenge: 2500
EPC2015 EPC2015_datasheet.pdf
EPC2015
Hersteller: EPC
Description: GANFET N-CH 40V 33A DIE OUTLINE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 33A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V
Produkt ist nicht verfügbar
EPC2015 EPC2015_datasheet.pdf
EPC2015
Hersteller: EPC
Description: GANFET N-CH 40V 33A DIE OUTLINE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 33A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V
Produkt ist nicht verfügbar
EPC2015C EPC2015C_datasheet.pdf
EPC2015C
Hersteller: EPC
Description: GANFET N-CH 40V 53A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 33A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
auf Bestellung 19049 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.6 EUR
10+ 4.7 EUR
100+ 3.8 EUR
500+ 3.72 EUR
Mindestbestellmenge: 4
EPC2015C EPC2015C_datasheet.pdf
EPC2015C
Hersteller: EPC
Description: GANFET N-CH 40V 53A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 33A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+3.72 EUR
Mindestbestellmenge: 2500
EPC2015CENGR EPC2015C_preliminary.pdf
EPC2015CENGR
Hersteller: EPC
Description: TRANS GAN 40V 36A BUMPED DIE
auf Bestellung 3875 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2015CENGR EPC2015C_preliminary.pdf
EPC2015CENGR
Hersteller: EPC
Description: TRANS GAN 40V 36A BUMPED DIE
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2015CENGR EPC2015C_preliminary.pdf
EPC2015CENGR
Hersteller: EPC
Description: TRANS GAN 40V 36A BUMPED DIE
auf Bestellung 3875 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2016 EPC2016_datasheet.pdf
EPC2016
Hersteller: EPC
Description: TRANS GAN 100V 11A BUMPED DIE
Produkt ist nicht verfügbar
EPC2016 EPC2016_datasheet.pdf
EPC2016
Hersteller: EPC
Description: TRANS GAN 100V 11A BUMPED DIE
Produkt ist nicht verfügbar
EPC2016 EPC2016_datasheet.pdf
EPC2016
Hersteller: EPC
Description: TRANS GAN 100V 11A BUMPED DIE
Produkt ist nicht verfügbar
EPC2016C EPC2016C_datasheet.pdf
EPC2016C
Hersteller: EPC
Description: GANFET N-CH 100V 18A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V
auf Bestellung 107500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.9 EUR
5000+ 1.83 EUR
Mindestbestellmenge: 2500
EPC2016C EPC2016C_datasheet.pdf
EPC2016C
Hersteller: EPC
Description: GANFET N-CH 100V 18A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V
auf Bestellung 107880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.21 EUR
10+ 3.5 EUR
100+ 2.78 EUR
500+ 2.36 EUR
1000+ 2 EUR
Mindestbestellmenge: 5
EPC2018 EPC2018_datasheet.pdf
EPC2018
Hersteller: EPC
Description: GANFET N-CH 150V 12A DIE
Produkt ist nicht verfügbar
EPC2018 EPC2018_datasheet.pdf
EPC2018
Hersteller: EPC
Description: GANFET N-CH 150V 12A DIE
Produkt ist nicht verfügbar
EPC2019 EPC2019_datasheet.pdf
EPC2019
Hersteller: EPC
Description: GANFET N-CH 200V 8.5A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 7A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 288 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 94840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.44 EUR
10+ 3.72 EUR
100+ 3.01 EUR
500+ 2.95 EUR
Mindestbestellmenge: 4
EPC2019 EPC2019_datasheet.pdf
EPC2019
Hersteller: EPC
Description: GANFET N-CH 200V 8.5A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 7A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 288 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 94000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+2.95 EUR
Mindestbestellmenge: 1000
EPC2019ENG EPC2019_datasheet.pdf
EPC2019ENG
Hersteller: EPC
Description: TRANS GAN 200V 8.5A BUMPED DIE
Produkt ist nicht verfügbar
EPC2019ENG EPC2019_datasheet.pdf
EPC2019ENG
Hersteller: EPC
Description: TRANS GAN 200V 8.5A BUMPED DIE
Produkt ist nicht verfügbar
EPC2019ENG EPC2019_datasheet.pdf
EPC2019ENG
Hersteller: EPC
Description: TRANS GAN 200V 8.5A BUMPED DIE
Produkt ist nicht verfügbar
EPC2020 EPC2020_datasheet.pdf
EPC2020
Hersteller: EPC
Description: GANFET N-CH 60V 90A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 31A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 30 V
auf Bestellung 3706 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+13.55 EUR
10+ 11.61 EUR
100+ 9.68 EUR
Mindestbestellmenge: 2
EPC2020 EPC2020_datasheet.pdf
EPC2020
Hersteller: EPC
Description: GANFET N-CH 60V 90A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 31A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
500+8.54 EUR
1000+ 7.68 EUR
Mindestbestellmenge: 500
EPC2020ENG EPC2020_preliminary.pdf
EPC2020ENG
Hersteller: EPC
Description: TRANS GAN 60V 60A BUMPED DIE
auf Bestellung 330 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2020ENGR EPC2020_preliminary.pdf
EPC2020ENGR
Hersteller: EPC
Description: TRANS GAN 60V 60A BUMPED DIE
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2020ENGR EPC2020_preliminary.pdf
EPC2020ENGR
Hersteller: EPC
Description: TRANS GAN 60V 60A BUMPED DIE
auf Bestellung 1915 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2020ENGR EPC2020_preliminary.pdf
EPC2020ENGR
Hersteller: EPC
Description: TRANS GAN 60V 60A BUMPED DIE
auf Bestellung 1915 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2021 EPC2021_datasheet.pdf
EPC2021
Hersteller: EPC
Description: GANFET N-CH 80V 90A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
auf Bestellung 6866 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.61 EUR
10+ 12.52 EUR
100+ 10.44 EUR
500+ 9.21 EUR
Mindestbestellmenge: 2
EPC2021 EPC2021_datasheet.pdf
EPC2021
Hersteller: EPC
Description: GANFET N-CH 80V 90A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+8.29 EUR
2000+ 7.77 EUR
Mindestbestellmenge: 1000
EPC2021ENG EPC2021_preliminary.pdf
EPC2021ENG
Hersteller: EPC
Description: TRANS GAN 80V 60A BUMPED DIE
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2021ENGR EPC2021_datasheet.pdf
EPC2021ENGR
Hersteller: EPC
Description: TRANS GAN 80V 60A BUMPED DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 40 V
Produkt ist nicht verfügbar
EPC2022 EPC2022_datasheet.pdf
EPC2022
Hersteller: EPC
Description: GANFET N-CH 100V 90A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 50 V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+8.38 EUR
2000+ 7.85 EUR
Mindestbestellmenge: 1000
EPC2022 EPC2022_datasheet.pdf
EPC2022
Hersteller: EPC
Description: GANFET N-CH 100V 90A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 50 V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 3351 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.78 EUR
10+ 12.66 EUR
100+ 10.55 EUR
500+ 9.31 EUR
Mindestbestellmenge: 2
EPC2022ENG EPC2022_preliminary.pdf
EPC2022ENG
Hersteller: EPC
Description: TRANS GAN 100V 60A BUMPED DIE
Produkt ist nicht verfügbar
EPC2022ENGRT EPC2022_preliminary.pdf
EPC2022ENGRT
Hersteller: EPC
Description: TRANS GAN 100V 60A BUMPED DIE
Produkt ist nicht verfügbar
EPC2022ENGRT EPC2022_preliminary.pdf
EPC2022ENGRT
Hersteller: EPC
Description: TRANS GAN 100V 60A BUMPED DIE
Produkt ist nicht verfügbar
EPC2022ENGRT EPC2022_preliminary.pdf
EPC2022ENGRT
Hersteller: EPC
Description: TRANS GAN 100V 60A BUMPED DIE
Produkt ist nicht verfügbar
EPC2023 EPC2023_datasheet.pdf
EPC2023
Hersteller: EPC
Description: GANFET N-CH 30V 60A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 40A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: Die
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 5643 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+13.71 EUR
10+ 11.75 EUR
100+ 9.79 EUR
Mindestbestellmenge: 2
EPC2023 EPC2023_datasheet.pdf
EPC2023
Hersteller: EPC
Description: GANFET N-CH 30V 60A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 40A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: Die
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
500+8.64 EUR
1000+ 7.77 EUR
Mindestbestellmenge: 500
EPC2023ENG EPC2023_preliminary.pdf
EPC2023ENG
Hersteller: EPC
Description: TRANS GAN 30V 60A BUMPED DIE
auf Bestellung 3370 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2023ENGR EPC2023_preliminary.pdf
EPC2023ENGR
Hersteller: EPC
Description: TRANS GAN 30V 60A BUMPED DIE
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2023ENGR EPC2023_preliminary.pdf
EPC2023ENGR
Hersteller: EPC
Description: TRANS GAN 30V 60A BUMPED DIE
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2023ENGR EPC2023_preliminary.pdf
EPC2023ENGR
Hersteller: EPC
Description: TRANS GAN 30V 60A BUMPED DIE
Produkt ist nicht verfügbar
EPC2024 EPC2024_datasheet.pdf
EPC2024
Hersteller: EPC
Description: GANFET NCH 40V 60A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 37A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 19mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+13.25 EUR
10+ 11.35 EUR
100+ 9.46 EUR
Mindestbestellmenge: 2
EPC2024 EPC2024_datasheet.pdf
EPC2024
Hersteller: EPC
Description: GANFET NCH 40V 60A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 37A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 19mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
auf Bestellung 2200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
500+8.35 EUR
1000+ 7.51 EUR
Mindestbestellmenge: 500
EPC2025
Hersteller: EPC
Description: GAN TRANS 300V 150MO BUMPED DIE
Produkt ist nicht verfügbar
EPC2025
Hersteller: EPC
Description: GAN TRANS 300V 150MO BUMPED DIE
Produkt ist nicht verfügbar
EPC2025ENGR EPC2025_datasheet.pdf
EPC2025ENGR
Hersteller: EPC
Description: TRANS GAN 300V 4A BUMPED DIE
Produkt ist nicht verfügbar
EPC2029 EPC2029_datasheet.pdf
EPC2029
Hersteller: EPC
Description: GANFET N-CH 80V 48A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 40 V
auf Bestellung 46000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
500+9.16 EUR
1000+ 8.25 EUR
Mindestbestellmenge: 500
EPC2029 EPC2029_datasheet.pdf
EPC2029
Hersteller: EPC
Description: GANFET N-CH 80V 48A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 40 V
auf Bestellung 46179 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.54 EUR
10+ 12.46 EUR
100+ 10.38 EUR
Mindestbestellmenge: 2
EPC2029ENGR EPC2029_preliminary.pdf
EPC2029ENGR
Hersteller: EPC
Description: TRANS GAN 80V 31A BUMPED DIE
Produkt ist nicht verfügbar
EPC2029ENGRT EPC2029_preliminary.pdf
EPC2029ENGRT
Hersteller: EPC
Description: TRANS GAN 80V 31A BUMPED DIE
auf Bestellung 1807 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2029ENGRT EPC2029_preliminary.pdf
EPC2029ENGRT
Hersteller: EPC
Description: TRANS GAN 80V 31A BUMPED DIE
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2029ENGRT EPC2029_preliminary.pdf
EPC2029ENGRT
Hersteller: EPC
Description: TRANS GAN 80V 31A BUMPED DIE
auf Bestellung 1807 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2030 EPC2030_datasheet.pdf
EPC2030
Hersteller: EPC
Description: GANFET NCH 40V 31A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
500+7.46 EUR
1000+ 6.71 EUR
2500+ 6.29 EUR
Mindestbestellmenge: 500
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