Produkte > EPC > Alle Produkte des Herstellers EPC (571) > Seite 3 nach 10

Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
EPC2030 EPC2030 EPC EPC2030_datasheet.pdf Description: GANFET NCH 40V 31A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
500+7.46 EUR
1000+ 6.71 EUR
2500+ 6.29 EUR
Mindestbestellmenge: 500
EPC2030ENGR EPC2030ENGR EPC EPC2030_preliminary.pdf Description: TRANS GAN 40V 31A BUMPED DIE
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2030ENGRT EPC2030ENGRT EPC EPC2030_preliminary.pdf Description: GANFET NCH 40V 31A DIE
auf Bestellung 3967 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2030ENGRT EPC2030ENGRT EPC EPC2030_preliminary.pdf Description: GANFET NCH 40V 31A DIE
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2031 EPC2031 EPC EPC2031_datasheet.pdf Description: GANFET NCH 60V 31A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: Die
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 300
auf Bestellung 14435 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.01 EUR
10+ 6.87 EUR
100+ 5.93 EUR
Mindestbestellmenge: 3
EPC2031 EPC2031 EPC EPC2031_datasheet.pdf Description: GANFET NCH 60V 31A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: Die
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 300
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
500+5.93 EUR
Mindestbestellmenge: 500
EPC2031ENGR EPC2031ENGR EPC EPC2031_preliminary.pdf Description: TRANS GAN 60V 31A BUMPED DIE
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2031ENGRT EPC2031ENGRT EPC EPC2031_datasheet.pdf Description: GANFET NCH 60V 31A DIE
auf Bestellung 3448 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2031ENGRT EPC2031ENGRT EPC EPC2031_datasheet.pdf Description: GANFET NCH 60V 31A DIE
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2032 EPC2032 EPC EPC2032_datasheet.pdf Description: GANFET N-CH 100V 48A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
500+7.41 EUR
1000+ 6.67 EUR
2500+ 6.25 EUR
Mindestbestellmenge: 500
EPC2032 EPC2032 EPC EPC2032_datasheet.pdf Description: GANFET N-CH 100V 48A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 50 V
auf Bestellung 3014 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.77 EUR
10+ 10.08 EUR
100+ 8.4 EUR
Mindestbestellmenge: 2
EPC2032ENGR EPC2032ENGR EPC EPC2032_preliminary.pdf Description: TRANS GAN 100V 48A BUMPED DIE
Produkt ist nicht verfügbar
EPC2032ENGRT EPC2032ENGRT EPC EPC2032_preliminary.pdf Description: TRANS GAN 100V 48A BUMPED DIE
Produkt ist nicht verfügbar
EPC2032ENGRT EPC2032ENGRT EPC EPC2032_preliminary.pdf Description: TRANS GAN 100V 48A BUMPED DIE
auf Bestellung 356 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2032ENGRT EPC2032ENGRT EPC EPC2032_preliminary.pdf Description: TRANS GAN 100V 48A BUMPED DIE
auf Bestellung 356 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2033 EPC2033 EPC EPC2033_datasheet.pdf Description: GANFET N-CH 150V 48A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: Die
Part Status: Active
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 75 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 75
auf Bestellung 2656 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.32 EUR
10+ 13.99 EUR
100+ 11.66 EUR
Mindestbestellmenge: 2
EPC2033 EPC2033 EPC EPC2033_datasheet.pdf Description: GANFET N-CH 150V 48A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: Die
Part Status: Active
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 75 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 75
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
500+10.29 EUR
1000+ 9.26 EUR
Mindestbestellmenge: 500
EPC2033ENGR EPC2033ENGR EPC EPC2033_preliminary.pdf Description: TRANS GAN 150V 31A BUMPED DIE
Produkt ist nicht verfügbar
EPC2033ENGRT EPC2033ENGRT EPC EPC2033_preliminary.pdf Description: TRANS GAN 150V 31A BUMPED DIE
Produkt ist nicht verfügbar
EPC2033ENGRT EPC2033ENGRT EPC EPC2033_preliminary.pdf Description: TRANS GAN 150V 31A BUMPED DIE
Produkt ist nicht verfügbar
EPC2033ENGRT EPC2033ENGRT EPC EPC2033_preliminary.pdf Description: TRANS GAN 150V 31A BUMPED DIE
Produkt ist nicht verfügbar
EPC2034 EPC2034 EPC EPC2034_datasheet.pdf Description: GANFET N-CH 200V 48A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
EPC2034 EPC2034 EPC EPC2034_datasheet.pdf Description: GANFET N-CH 200V 48A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
EPC2034C EPC2034C EPC EPC2034C_datasheet.pdf Description: GANFET N-CH 200V 48A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 5500 Stücke:
Lieferzeit 10-14 Tag (e)
500+9.48 EUR
1000+ 8.53 EUR
Mindestbestellmenge: 500
EPC2034C EPC2034C EPC EPC2034C_datasheet.pdf Description: GANFET N-CH 200V 48A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 5891 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.03 EUR
10+ 12.89 EUR
100+ 10.74 EUR
Mindestbestellmenge: 2
EPC2034ENGR EPC2034ENGR EPC EPC2034_preliminary.pdf Description: TRANS GAN 200V 31A BUMPED DIE
Produkt ist nicht verfügbar
EPC2034ENGRT EPC2034ENGRT EPC EPC2034_preliminary.pdf Description: TRANS GAN 200V 31A BUMPED DIE
Produkt ist nicht verfügbar
EPC2034ENGRT EPC2034ENGRT EPC EPC2034_preliminary.pdf Description: TRANS GAN 200V 31A BUMPED DIE
Produkt ist nicht verfügbar
EPC2034ENGRT EPC2034ENGRT EPC EPC2034_preliminary.pdf Description: TRANS GAN 200V 31A BUMPED DIE
Produkt ist nicht verfügbar
EPC2035 EPC2035 EPC EPC2035_datasheet.pdf Description: GANFET N-CH 60V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 800µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 30 V
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.92 EUR
5000+ 0.87 EUR
12500+ 0.83 EUR
Mindestbestellmenge: 2500
EPC2035 EPC2035 EPC EPC2035_datasheet.pdf Description: GANFET N-CH 60V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 800µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 30 V
auf Bestellung 37276 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.24 EUR
10+ 1.82 EUR
100+ 1.41 EUR
500+ 1.2 EUR
1000+ 0.98 EUR
Mindestbestellmenge: 8
EPC2036 EPC2036 EPC EPC2036_datasheet.pdf Description: GANFET N-CH 100V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.93 EUR
5000+ 0.89 EUR
Mindestbestellmenge: 2500
EPC2036 EPC2036 EPC EPC2036_datasheet.pdf Description: GANFET N-CH 100V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 14919 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.25 EUR
10+ 1.84 EUR
100+ 1.43 EUR
500+ 1.21 EUR
1000+ 0.99 EUR
Mindestbestellmenge: 8
EPC2037 EPC2037 EPC EPC2037_datasheet.pdf Description: GANFET N-CH 100V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 80µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Produkt ist nicht verfügbar
EPC2037 EPC2037 EPC EPC2037_datasheet.pdf Description: GANFET N-CH 100V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 80µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 22582 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.24 EUR
10+ 1.82 EUR
100+ 1.41 EUR
500+ 1.2 EUR
1000+ 0.98 EUR
Mindestbestellmenge: 8
EPC2037ENGR EPC EPC2037_preliminary.pdf Description: TRANS GAN 100V BUMPED DIE
auf Bestellung 1730 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2037ENGR EPC EPC2037_preliminary.pdf Description: TRANS GAN 100V BUMPED DIE
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2037ENGR EPC EPC2037_preliminary.pdf Description: TRANS GAN 100V BUMPED DIE
auf Bestellung 1730 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2038 EPC2038 EPC EPC2038_datasheet.pdf Description: GANFET N-CH 100V 500MA DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 20µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.044 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8.4 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 77500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.93 EUR
5000+ 0.89 EUR
12500+ 0.85 EUR
Mindestbestellmenge: 2500
EPC2038 EPC2038 EPC EPC2038_datasheet.pdf Description: GANFET N-CH 100V 500MA DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 20µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.044 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8.4 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 82758 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.25 EUR
10+ 1.84 EUR
100+ 1.43 EUR
500+ 1.21 EUR
1000+ 0.99 EUR
Mindestbestellmenge: 8
EPC2038ENGR EPC2038ENGR EPC EPC2038_preliminary.pdf Description: TRANS GAN 100V 0.5A BUMPED DIE
Produkt ist nicht verfügbar
EPC2038ENGR EPC2038ENGR EPC EPC2038_preliminary.pdf Description: TRANS GAN 100V 0.5A BUMPED DIE
Produkt ist nicht verfügbar
EPC2038ENGR EPC2038ENGR EPC EPC2038_preliminary.pdf Description: TRANS GAN 100V 0.5A BUMPED DIE
Produkt ist nicht verfügbar
EPC2039 EPC2039 EPC EPC2039_datasheet.pdf Description: GANFET N-CH 80V 6.8A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
auf Bestellung 43823 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.6 EUR
10+ 2.16 EUR
100+ 1.72 EUR
500+ 1.46 EUR
1000+ 1.23 EUR
Mindestbestellmenge: 7
EPC2039 EPC2039 EPC EPC2039_datasheet.pdf Description: GANFET N-CH 80V 6.8A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.17 EUR
5000+ 1.13 EUR
12500+ 1.09 EUR
Mindestbestellmenge: 2500
EPC2039ENGRT EPC2039ENGRT EPC EPC2039_preliminary.pdf Description: TRANS GAN 80V 6.8A BUMPED DIE
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2039ENGRT EPC2039ENGRT EPC EPC2039_preliminary.pdf Description: TRANS GAN 80V 6.8A BUMPED DIE
auf Bestellung 4235 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2039ENGRT EPC2039ENGRT EPC EPC2039_preliminary.pdf Description: TRANS GAN 80V 6.8A BUMPED DIE
auf Bestellung 4235 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2040 EPC2040 EPC EPC2040_datasheet.pdf Description: GANFET NCH 15V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 6 V
auf Bestellung 27700 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.06 EUR
11+ 1.68 EUR
100+ 1.31 EUR
500+ 1.11 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 9
EPC2040 EPC2040 EPC EPC2040_datasheet.pdf Description: GANFET NCH 15V 3.4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 6 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.85 EUR
5000+ 0.81 EUR
12500+ 0.77 EUR
Mindestbestellmenge: 2500
EPC2040ENGR EPC EPC2040_preliminary.pdf Description: TRANS GAN 25V BUMPED DIE
Produkt ist nicht verfügbar
EPC2040ENGRT EPC2040ENGRT EPC EPC2040_preliminary.pdf Description: TRANS GAN 15V BUMPED DIE
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2040ENGRT EPC2040ENGRT EPC EPC2040_preliminary.pdf Description: TRANS GAN 15V BUMPED DIE
auf Bestellung 4955 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2040ENGRT EPC2040ENGRT EPC EPC2040_preliminary.pdf Description: TRANS GAN 15V BUMPED DIE
auf Bestellung 4955 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2044 EPC2044 EPC EPC2044_datasheet.pdf Description: TRANSISTOR GAN 40V .0105OHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 664 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.65 EUR
Mindestbestellmenge: 2500
EPC2044 EPC2044 EPC EPC2044_datasheet.pdf Description: TRANSISTOR GAN 40V .0105OHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 664 pF @ 50 V
auf Bestellung 7488 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.59 EUR
10+ 3.23 EUR
100+ 2.6 EUR
500+ 2.13 EUR
1000+ 1.77 EUR
Mindestbestellmenge: 5
EPC2045 EPC2045 EPC EPC2045_datasheet.pdf Description: GANFET N-CH 100V 16A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 37500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.96 EUR
5000+ 2.84 EUR
Mindestbestellmenge: 2500
EPC2045 EPC2045 EPC EPC2045_datasheet.pdf Description: GANFET N-CH 100V 16A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 47642 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.09 EUR
10+ 5.11 EUR
100+ 4.14 EUR
500+ 3.68 EUR
1000+ 3.15 EUR
Mindestbestellmenge: 3
EPC2049ENGRT EPC2049ENGRT EPC EPC2049_preliminary.pdf Description: GANFET N-CH 40V 16A DIE
Produkt ist nicht verfügbar
EPC2049ENGRT EPC2049ENGRT EPC EPC2049_preliminary.pdf Description: GANFET N-CH 40V 16A DIE
Produkt ist nicht verfügbar
EPC2030 EPC2030_datasheet.pdf
EPC2030
Hersteller: EPC
Description: GANFET NCH 40V 31A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
500+7.46 EUR
1000+ 6.71 EUR
2500+ 6.29 EUR
Mindestbestellmenge: 500
EPC2030ENGR EPC2030_preliminary.pdf
EPC2030ENGR
Hersteller: EPC
Description: TRANS GAN 40V 31A BUMPED DIE
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2030ENGRT EPC2030_preliminary.pdf
EPC2030ENGRT
Hersteller: EPC
Description: GANFET NCH 40V 31A DIE
auf Bestellung 3967 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2030ENGRT EPC2030_preliminary.pdf
EPC2030ENGRT
Hersteller: EPC
Description: GANFET NCH 40V 31A DIE
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2031 EPC2031_datasheet.pdf
EPC2031
Hersteller: EPC
Description: GANFET NCH 60V 31A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: Die
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 300
auf Bestellung 14435 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.01 EUR
10+ 6.87 EUR
100+ 5.93 EUR
Mindestbestellmenge: 3
EPC2031 EPC2031_datasheet.pdf
EPC2031
Hersteller: EPC
Description: GANFET NCH 60V 31A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: Die
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 300
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
500+5.93 EUR
Mindestbestellmenge: 500
EPC2031ENGR EPC2031_preliminary.pdf
EPC2031ENGR
Hersteller: EPC
Description: TRANS GAN 60V 31A BUMPED DIE
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2031ENGRT EPC2031_datasheet.pdf
EPC2031ENGRT
Hersteller: EPC
Description: GANFET NCH 60V 31A DIE
auf Bestellung 3448 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2031ENGRT EPC2031_datasheet.pdf
EPC2031ENGRT
Hersteller: EPC
Description: GANFET NCH 60V 31A DIE
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2032 EPC2032_datasheet.pdf
EPC2032
Hersteller: EPC
Description: GANFET N-CH 100V 48A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
500+7.41 EUR
1000+ 6.67 EUR
2500+ 6.25 EUR
Mindestbestellmenge: 500
EPC2032 EPC2032_datasheet.pdf
EPC2032
Hersteller: EPC
Description: GANFET N-CH 100V 48A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 50 V
auf Bestellung 3014 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.77 EUR
10+ 10.08 EUR
100+ 8.4 EUR
Mindestbestellmenge: 2
EPC2032ENGR EPC2032_preliminary.pdf
EPC2032ENGR
Hersteller: EPC
Description: TRANS GAN 100V 48A BUMPED DIE
Produkt ist nicht verfügbar
EPC2032ENGRT EPC2032_preliminary.pdf
EPC2032ENGRT
Hersteller: EPC
Description: TRANS GAN 100V 48A BUMPED DIE
Produkt ist nicht verfügbar
EPC2032ENGRT EPC2032_preliminary.pdf
EPC2032ENGRT
Hersteller: EPC
Description: TRANS GAN 100V 48A BUMPED DIE
auf Bestellung 356 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2032ENGRT EPC2032_preliminary.pdf
EPC2032ENGRT
Hersteller: EPC
Description: TRANS GAN 100V 48A BUMPED DIE
auf Bestellung 356 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2033 EPC2033_datasheet.pdf
EPC2033
Hersteller: EPC
Description: GANFET N-CH 150V 48A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: Die
Part Status: Active
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 75 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 75
auf Bestellung 2656 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+16.32 EUR
10+ 13.99 EUR
100+ 11.66 EUR
Mindestbestellmenge: 2
EPC2033 EPC2033_datasheet.pdf
EPC2033
Hersteller: EPC
Description: GANFET N-CH 150V 48A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: Die
Part Status: Active
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 75 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 75
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
500+10.29 EUR
1000+ 9.26 EUR
Mindestbestellmenge: 500
EPC2033ENGR EPC2033_preliminary.pdf
EPC2033ENGR
Hersteller: EPC
Description: TRANS GAN 150V 31A BUMPED DIE
Produkt ist nicht verfügbar
EPC2033ENGRT EPC2033_preliminary.pdf
EPC2033ENGRT
Hersteller: EPC
Description: TRANS GAN 150V 31A BUMPED DIE
Produkt ist nicht verfügbar
EPC2033ENGRT EPC2033_preliminary.pdf
EPC2033ENGRT
Hersteller: EPC
Description: TRANS GAN 150V 31A BUMPED DIE
Produkt ist nicht verfügbar
EPC2033ENGRT EPC2033_preliminary.pdf
EPC2033ENGRT
Hersteller: EPC
Description: TRANS GAN 150V 31A BUMPED DIE
Produkt ist nicht verfügbar
EPC2034 EPC2034_datasheet.pdf
EPC2034
Hersteller: EPC
Description: GANFET N-CH 200V 48A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
EPC2034 EPC2034_datasheet.pdf
EPC2034
Hersteller: EPC
Description: GANFET N-CH 200V 48A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
EPC2034C EPC2034C_datasheet.pdf
EPC2034C
Hersteller: EPC
Description: GANFET N-CH 200V 48A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 5500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
500+9.48 EUR
1000+ 8.53 EUR
Mindestbestellmenge: 500
EPC2034C EPC2034C_datasheet.pdf
EPC2034C
Hersteller: EPC
Description: GANFET N-CH 200V 48A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 5891 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+15.03 EUR
10+ 12.89 EUR
100+ 10.74 EUR
Mindestbestellmenge: 2
EPC2034ENGR EPC2034_preliminary.pdf
EPC2034ENGR
Hersteller: EPC
Description: TRANS GAN 200V 31A BUMPED DIE
Produkt ist nicht verfügbar
EPC2034ENGRT EPC2034_preliminary.pdf
EPC2034ENGRT
Hersteller: EPC
Description: TRANS GAN 200V 31A BUMPED DIE
Produkt ist nicht verfügbar
EPC2034ENGRT EPC2034_preliminary.pdf
EPC2034ENGRT
Hersteller: EPC
Description: TRANS GAN 200V 31A BUMPED DIE
Produkt ist nicht verfügbar
EPC2034ENGRT EPC2034_preliminary.pdf
EPC2034ENGRT
Hersteller: EPC
Description: TRANS GAN 200V 31A BUMPED DIE
Produkt ist nicht verfügbar
EPC2035 EPC2035_datasheet.pdf
EPC2035
Hersteller: EPC
Description: GANFET N-CH 60V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 800µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 30 V
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.92 EUR
5000+ 0.87 EUR
12500+ 0.83 EUR
Mindestbestellmenge: 2500
EPC2035 EPC2035_datasheet.pdf
EPC2035
Hersteller: EPC
Description: GANFET N-CH 60V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 800µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 30 V
auf Bestellung 37276 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.24 EUR
10+ 1.82 EUR
100+ 1.41 EUR
500+ 1.2 EUR
1000+ 0.98 EUR
Mindestbestellmenge: 8
EPC2036 EPC2036_datasheet.pdf
EPC2036
Hersteller: EPC
Description: GANFET N-CH 100V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.93 EUR
5000+ 0.89 EUR
Mindestbestellmenge: 2500
EPC2036 EPC2036_datasheet.pdf
EPC2036
Hersteller: EPC
Description: GANFET N-CH 100V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 14919 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.25 EUR
10+ 1.84 EUR
100+ 1.43 EUR
500+ 1.21 EUR
1000+ 0.99 EUR
Mindestbestellmenge: 8
EPC2037 EPC2037_datasheet.pdf
EPC2037
Hersteller: EPC
Description: GANFET N-CH 100V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 80µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Produkt ist nicht verfügbar
EPC2037 EPC2037_datasheet.pdf
EPC2037
Hersteller: EPC
Description: GANFET N-CH 100V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 80µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 22582 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.24 EUR
10+ 1.82 EUR
100+ 1.41 EUR
500+ 1.2 EUR
1000+ 0.98 EUR
Mindestbestellmenge: 8
EPC2037ENGR EPC2037_preliminary.pdf
Hersteller: EPC
Description: TRANS GAN 100V BUMPED DIE
auf Bestellung 1730 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2037ENGR EPC2037_preliminary.pdf
Hersteller: EPC
Description: TRANS GAN 100V BUMPED DIE
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2037ENGR EPC2037_preliminary.pdf
Hersteller: EPC
Description: TRANS GAN 100V BUMPED DIE
auf Bestellung 1730 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2038 EPC2038_datasheet.pdf
EPC2038
Hersteller: EPC
Description: GANFET N-CH 100V 500MA DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 20µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.044 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8.4 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 77500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.93 EUR
5000+ 0.89 EUR
12500+ 0.85 EUR
Mindestbestellmenge: 2500
EPC2038 EPC2038_datasheet.pdf
EPC2038
Hersteller: EPC
Description: GANFET N-CH 100V 500MA DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 20µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.044 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8.4 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 82758 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.25 EUR
10+ 1.84 EUR
100+ 1.43 EUR
500+ 1.21 EUR
1000+ 0.99 EUR
Mindestbestellmenge: 8
EPC2038ENGR EPC2038_preliminary.pdf
EPC2038ENGR
Hersteller: EPC
Description: TRANS GAN 100V 0.5A BUMPED DIE
Produkt ist nicht verfügbar
EPC2038ENGR EPC2038_preliminary.pdf
EPC2038ENGR
Hersteller: EPC
Description: TRANS GAN 100V 0.5A BUMPED DIE
Produkt ist nicht verfügbar
EPC2038ENGR EPC2038_preliminary.pdf
EPC2038ENGR
Hersteller: EPC
Description: TRANS GAN 100V 0.5A BUMPED DIE
Produkt ist nicht verfügbar
EPC2039 EPC2039_datasheet.pdf
EPC2039
Hersteller: EPC
Description: GANFET N-CH 80V 6.8A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
auf Bestellung 43823 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.6 EUR
10+ 2.16 EUR
100+ 1.72 EUR
500+ 1.46 EUR
1000+ 1.23 EUR
Mindestbestellmenge: 7
EPC2039 EPC2039_datasheet.pdf
EPC2039
Hersteller: EPC
Description: GANFET N-CH 80V 6.8A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.17 EUR
5000+ 1.13 EUR
12500+ 1.09 EUR
Mindestbestellmenge: 2500
EPC2039ENGRT EPC2039_preliminary.pdf
EPC2039ENGRT
Hersteller: EPC
Description: TRANS GAN 80V 6.8A BUMPED DIE
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2039ENGRT EPC2039_preliminary.pdf
EPC2039ENGRT
Hersteller: EPC
Description: TRANS GAN 80V 6.8A BUMPED DIE
auf Bestellung 4235 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2039ENGRT EPC2039_preliminary.pdf
EPC2039ENGRT
Hersteller: EPC
Description: TRANS GAN 80V 6.8A BUMPED DIE
auf Bestellung 4235 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2040 EPC2040_datasheet.pdf
EPC2040
Hersteller: EPC
Description: GANFET NCH 15V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 6 V
auf Bestellung 27700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.06 EUR
11+ 1.68 EUR
100+ 1.31 EUR
500+ 1.11 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 9
EPC2040 EPC2040_datasheet.pdf
EPC2040
Hersteller: EPC
Description: GANFET NCH 15V 3.4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 6 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.85 EUR
5000+ 0.81 EUR
12500+ 0.77 EUR
Mindestbestellmenge: 2500
EPC2040ENGR EPC2040_preliminary.pdf
Hersteller: EPC
Description: TRANS GAN 25V BUMPED DIE
Produkt ist nicht verfügbar
EPC2040ENGRT EPC2040_preliminary.pdf
EPC2040ENGRT
Hersteller: EPC
Description: TRANS GAN 15V BUMPED DIE
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2040ENGRT EPC2040_preliminary.pdf
EPC2040ENGRT
Hersteller: EPC
Description: TRANS GAN 15V BUMPED DIE
auf Bestellung 4955 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2040ENGRT EPC2040_preliminary.pdf
EPC2040ENGRT
Hersteller: EPC
Description: TRANS GAN 15V BUMPED DIE
auf Bestellung 4955 Stücke:
Lieferzeit 10-14 Tag (e)
EPC2044 EPC2044_datasheet.pdf
EPC2044
Hersteller: EPC
Description: TRANSISTOR GAN 40V .0105OHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 664 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.65 EUR
Mindestbestellmenge: 2500
EPC2044 EPC2044_datasheet.pdf
EPC2044
Hersteller: EPC
Description: TRANSISTOR GAN 40V .0105OHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 664 pF @ 50 V
auf Bestellung 7488 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.59 EUR
10+ 3.23 EUR
100+ 2.6 EUR
500+ 2.13 EUR
1000+ 1.77 EUR
Mindestbestellmenge: 5
EPC2045 EPC2045_datasheet.pdf
EPC2045
Hersteller: EPC
Description: GANFET N-CH 100V 16A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 37500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+2.96 EUR
5000+ 2.84 EUR
Mindestbestellmenge: 2500
EPC2045 EPC2045_datasheet.pdf
EPC2045
Hersteller: EPC
Description: GANFET N-CH 100V 16A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 47642 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.09 EUR
10+ 5.11 EUR
100+ 4.14 EUR
500+ 3.68 EUR
1000+ 3.15 EUR
Mindestbestellmenge: 3
EPC2049ENGRT EPC2049_preliminary.pdf
EPC2049ENGRT
Hersteller: EPC
Description: GANFET N-CH 40V 16A DIE
Produkt ist nicht verfügbar
EPC2049ENGRT EPC2049_preliminary.pdf
EPC2049ENGRT
Hersteller: EPC
Description: GANFET N-CH 40V 16A DIE
Produkt ist nicht verfügbar
Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10  [ Nächste Seite >> ]