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EPC2038 EPC2038 EPC EPC2038_datasheet.pdf Description: GANFET N-CH 100V 500MA DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 20µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.044 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8.4 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.23 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2038 EPC2038 EPC EPC2038_datasheet.pdf Description: GANFET N-CH 100V 500MA DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 20µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.044 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8.4 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 101333 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.08 EUR
10+2.61 EUR
50+1.96 EUR
100+1.76 EUR
500+1.39 EUR
Mindestbestellmenge: 6 Stücke
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EPC2038ENGR EPC2038ENGR EPC EPC2038_preliminary.pdf Description: TRANS GAN 100V 0.5A BUMPED DIE
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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EPC2038ENGR EPC2038ENGR EPC EPC2038_preliminary.pdf Description: TRANS GAN 100V 0.5A BUMPED DIE
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EPC2038ENGR EPC2038ENGR EPC EPC2038_preliminary.pdf Description: TRANS GAN 100V 0.5A BUMPED DIE
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EPC2039 EPC2039 EPC EPC2039_datasheet.pdf
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.57 EUR
10+2.24 EUR
100+2 EUR
500+1.59 EUR
1000+1.56 EUR
2500+1.33 EUR
5000+1.24 EUR
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EPC2039 EPC2039 EPC EPC2039_datasheet.pdf Description: GANFET N-CH 80V 6.8A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
auf Bestellung 72500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.36 EUR
7500+1.23 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2039 EPC2039 EPC EPC2039_datasheet.pdf Description: GANFET N-CH 80V 6.8A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
auf Bestellung 75371 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.63 EUR
10+2.98 EUR
50+2.26 EUR
100+2.03 EUR
500+1.63 EUR
Mindestbestellmenge: 5 Stücke
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EPC2039ENGRT EPC2039ENGRT EPC EPC2039_preliminary.pdf Description: TRANS GAN 80V 6.8A BUMPED DIE
auf Bestellung 4235 Stücke:
Lieferzeit 10-14 Tag (e)
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EPC2039ENGRT EPC2039ENGRT EPC EPC2039_preliminary.pdf Description: TRANS GAN 80V 6.8A BUMPED DIE
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 1000 Stücke
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EPC2039ENGRT EPC2039ENGRT EPC EPC2039_preliminary.pdf Description: TRANS GAN 80V 6.8A BUMPED DIE
auf Bestellung 4235 Stücke:
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EPC2040 EPC2040 EPC EPC2040_datasheet.pdf?ver=Coff4xFfEBnhHPdgfJimOw%3d%3d Description: GANFET NCH 15V 3.4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 6 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.95 EUR
7500+0.84 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2040 EPC2040 EPC EPC2040_datasheet.pdf GaN FETs EPC eGaN FET,15 V, 30 milliohm at 5 V, BGA 0.85 x 1.2
auf Bestellung 12688 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.39 EUR
10+1.62 EUR
100+1.44 EUR
500+1.14 EUR
1000+1.09 EUR
2500+0.93 EUR
5000+0.83 EUR
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EPC2040 EPC2040 EPC EPC2040_datasheet.pdf?ver=Coff4xFfEBnhHPdgfJimOw%3d%3d Description: GANFET NCH 15V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 6 V
auf Bestellung 60898 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.44 EUR
10+2.18 EUR
50+1.64 EUR
100+1.46 EUR
500+1.15 EUR
Mindestbestellmenge: 7 Stücke
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EPC2040ENGR EPC EPC2040_preliminary.pdf Description: TRANS GAN 25V BUMPED DIE
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
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EPC2040ENGRT EPC2040ENGRT EPC EPC2040_preliminary.pdf Description: TRANS GAN 15V BUMPED DIE
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 2500 Stücke
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EPC2040ENGRT EPC2040ENGRT EPC EPC2040_preliminary.pdf Description: TRANS GAN 15V BUMPED DIE
auf Bestellung 4955 Stücke:
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EPC2040ENGRT EPC2040ENGRT EPC EPC2040_preliminary.pdf Description: TRANS GAN 15V BUMPED DIE
auf Bestellung 4955 Stücke:
Lieferzeit 10-14 Tag (e)
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EPC2044 EPC2044 EPC EPC2044_datasheet.pdf Description: GANFET N-CH 100V 9.4A DIE
Input Capacitance (Ciss) (Max) @ Vds: 664 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.42 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2044 EPC2044 EPC EPC2044_datasheet.pdf Description: GANFET N-CH 100V 9.4A DIE
Input Capacitance (Ciss) (Max) @ Vds: 664 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
auf Bestellung 2821 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.84 EUR
10+3.11 EUR
50+2.37 EUR
100+2.12 EUR
500+1.7 EUR
Mindestbestellmenge: 5 Stücke
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EPC2044 EPC2044 EPC EPC2044_datasheet.pdf GaN FETs EPC eGaN FET,100 V, 10.5 milliohm at 5 V, CuPillar 2.15 x 1.25
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.76 EUR
10+2.34 EUR
100+2.09 EUR
500+1.68 EUR
1000+1.64 EUR
2500+1.39 EUR
5000+1.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2045 EPC2045 EPC EPC2045_datasheet.pdf Description: GANFET N-CH 100V 16A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+4.09 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2045 EPC2045 EPC EPC2045_datasheet.pdf Description: GANFET N-CH 100V 16A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 108153 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.82 EUR
10+6.52 EUR
50+5.09 EUR
100+4.63 EUR
500+4.07 EUR
Mindestbestellmenge: 3 Stücke
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EPC2045 EPC2045 EPC EPC2045_datasheet.pdf
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2045 EPC EPC2045_datasheet.pdf
Produkt ist nicht verfügbar
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EPC2047 EPC
Produkt ist nicht verfügbar
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EPC2049ENGRT EPC2049ENGRT EPC EPC2049_preliminary.pdf Description: GANFET N-CH 40V 16A DIE
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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EPC2049ENGRT EPC2049ENGRT EPC EPC2049_preliminary.pdf Description: GANFET N-CH 40V 16A DIE
Produkt ist nicht verfügbar
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EPC2050 EPC2050 EPC EPC2050_datasheet.pdf Description: TRANS GAN BUMPED DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 280 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+5.18 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2050 EPC2050 EPC EPC2050_datasheet.pdf Description: TRANS GAN BUMPED DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 280 V
auf Bestellung 9075 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.9 EUR
10+8.7 EUR
50+6.89 EUR
100+6.32 EUR
500+5.99 EUR
Mindestbestellmenge: 2 Stücke
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EPC2050 EPC2050 EPC EPC2050_datasheet.pdf GaN FETs EPC eGaN FET, 350 V, 80 milliohm at 5 V, BGA 1.95 x 1.95
auf Bestellung 597 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.96 EUR
10+8.76 EUR
100+6.37 EUR
500+6.01 EUR
1000+5.26 EUR
2500+5.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2051 EPC2051 EPC EPC2051_datasheet.pdf Description: GANFET N-CH 100V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 42500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.08 EUR
7500+0.96 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2051 EPC2051 EPC EPC2051_datasheet.pdf GaN FETs EPC eGaN FET,100 V, 25 milliohm at 5 V, BGA 1.3 x 0.85
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.58 EUR
10+2.28 EUR
100+1.54 EUR
500+1.21 EUR
1000+1.11 EUR
2500+1 EUR
5000+0.89 EUR
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EPC2051 EPC2051 EPC EPC2051_datasheet.pdf Description: GANFET N-CH 100V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 44616 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.86 EUR
10+2.46 EUR
50+1.86 EUR
100+1.65 EUR
500+1.31 EUR
Mindestbestellmenge: 6 Stücke
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EPC2052 EPC2052 EPC EPC2052_datasheet.pdf Description: GANFET N-CH 100V 8.2A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.39 EUR
7500+1.25 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2052 EPC2052 EPC EPC2052_datasheet.pdf Description: GANFET N-CH 100V 8.2A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 76877 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.77 EUR
10+3.07 EUR
50+2.33 EUR
100+2.09 EUR
500+1.67 EUR
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EPC2052 EPC2052 EPC EPC2052_datasheet.pdf GaN FETs EPC eGaN FET,100 V, 13.5 milliohm at 5 V, BGA 1.5 x 1.5
auf Bestellung 12003 Stücke:
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1+4.44 EUR
10+2.87 EUR
100+1.95 EUR
500+1.55 EUR
1000+1.43 EUR
2500+1.29 EUR
5000+1.19 EUR
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EPC2053 EPC2053 EPC EPC2053_datasheet.pdf Description: GANFET N-CH 100V 48A DIE
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Not For New Designs
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
auf Bestellung 12500 Stücke:
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2500+5.5 EUR
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EPC2053 EPC2053 EPC EPC2053_datasheet.pdf
auf Bestellung 2500 Stücke:
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1+14.97 EUR
10+8.08 EUR
100+7.41 EUR
500+7.14 EUR
1000+6.37 EUR
2500+5.74 EUR
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EPC2053 EPC2053 EPC EPC2053_datasheet.pdf Description: GANFET N-CH 100V 48A DIE
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Not For New Designs
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
auf Bestellung 14755 Stücke:
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10+8.92 EUR
100+6.74 EUR
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EPC2054 EPC2054 EPC EPC2054_datasheet.pdf GaN FETs EPC eGaN FET,200 V, 43 milliohm at 5 V, BGA 1.8 x 1.8
auf Bestellung 17846 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.05 EUR
10+2.51 EUR
100+2.23 EUR
500+1.8 EUR
1000+1.71 EUR
2500+1.37 EUR
10000+1.34 EUR
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EPC2054 EPC2054 EPC EPC2054_datasheet.pdf Description: TRANS GAN 200V DIE 43MOHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 147500 Stücke:
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EPC2054 EPC2054 EPC EPC2054_datasheet.pdf Description: TRANS GAN 200V DIE 43MOHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 148742 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.18 EUR
10+3.34 EUR
50+2.53 EUR
100+2.28 EUR
500+1.83 EUR
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EPC2055 EPC2055 EPC epc2055_datasheet.pdf Description: GANFET N-CH 40V 29A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
auf Bestellung 22500 Stücke:
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2500+1.98 EUR
7500+1.88 EUR
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EPC2055 EPC2055 EPC epc2055_datasheet.pdf Description: GANFET N-CH 40V 29A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
auf Bestellung 22735 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.39 EUR
10+4.15 EUR
50+3.19 EUR
100+2.88 EUR
500+2.34 EUR
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EPC2055 EPC2055 EPC epc2055_datasheet.pdf GaN FETs EPC eGaN FET, 40 V, 3.5 mohm at 5 V, LGA 2.5 x 1.5
auf Bestellung 5596 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.28 EUR
10+3.17 EUR
100+2.84 EUR
500+2.31 EUR
1000+2.28 EUR
2500+1.95 EUR
5000+1.92 EUR
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EPC2057 EPC2057 EPC EPC2057.pdf Description: TRANS GAN 50V .0085OHM 4LGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 444 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.37 EUR
7500+1.23 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2057 EPC2057 EPC EPC2057.pdf GaN FETs eGaN FET, 50 V, 8.5 milliohm at 5 V, LGA 1.2 x 1.5 mm
auf Bestellung 3621 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.08 EUR
10+2.64 EUR
100+1.78 EUR
500+1.43 EUR
1000+1.36 EUR
2500+1.18 EUR
5000+1.17 EUR
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EPC2057 EPC2057 EPC EPC2057.pdf Description: TRANS GAN 50V .0085OHM 4LGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 444 pF @ 25 V
auf Bestellung 11270 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.71 EUR
10+3.02 EUR
50+2.3 EUR
100+2.06 EUR
500+1.64 EUR
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EPC2059 EPC2059 EPC EPC2059_datasheet.pdf Description: TRANS GAN 170V DIE .009OHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 170 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 85 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 85
auf Bestellung 13162 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.68 EUR
10+5.71 EUR
50+4.45 EUR
100+4.05 EUR
500+3.47 EUR
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EPC2059 EPC2059 EPC EPC2059_datasheet.pdf GaN FETs EPC eGaN FET, 170 V, 9 milliOhm at 5 V, LGA 2.8 x 1.4
auf Bestellung 14202 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.52 EUR
10+4.38 EUR
100+3.97 EUR
500+3.42 EUR
2500+2.92 EUR
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EPC2059 EPC2059 EPC EPC2059_datasheet.pdf Description: TRANS GAN 170V DIE .009OHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 170 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 85 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 85
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.84 EUR
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EPC2059 EPC2059 EPC TEPC2059_0001.pdf Transistor GANFET; 170V; 6V; 9mOhm; 24A; -40°C ~ 150°C; EPC2059 TEPC2059
Anzahl je Verpackung: 2 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
2+22.63 EUR
Mindestbestellmenge: 2 Stücke
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EPC2065 EPC2065 EPC EPC2065_datasheet.pdf Description: GAN FET 80V .0036OHM 8BUMP DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
auf Bestellung 5000 Stücke:
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1000+2.95 EUR
3000+2.69 EUR
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EPC2065 EPC2065 EPC EPC2065_datasheet.pdf Description: GAN FET 80V .0036OHM 8BUMP DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
auf Bestellung 5616 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.29 EUR
10+5.45 EUR
50+4.24 EUR
100+3.86 EUR
500+3.3 EUR
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EPC2065 EPC2065 EPC EPC2065_datasheet.pdf GaN FETs EPC eGaN FET, 80 V, 3.6 milliohm at 5 V, LGA 3.5 x 1.95
auf Bestellung 2531 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.32 EUR
10+4.27 EUR
100+3.88 EUR
500+3.31 EUR
1000+2.95 EUR
2000+2.81 EUR
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EPC2066 EPC2066 EPC EPC2066_datasheet.pdf Description: TRANSISTOR GAN 40V .001OHM
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 28mA
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 5V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +6V, -4V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+5.74 EUR
3000+5.72 EUR
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EPC2066 EPC2066 EPC EPC2066_datasheet.pdf Description: TRANSISTOR GAN 40V .001OHM
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 28mA
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 5V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
auf Bestellung 8628 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.61 EUR
10+9.9 EUR
50+7.88 EUR
100+7.24 EUR
500+7.01 EUR
Mindestbestellmenge: 2 Stücke
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EPC2067 EPC2067 EPC EPC2067_datasheet.pdf Description: TRANS GAN .0015OHM 40V 14LGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Ta)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 37A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 18mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3267 pF @ 20 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+4.19 EUR
Mindestbestellmenge: 1000 Stücke
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EPC2067 EPC2067 EPC EPC2067_datasheet.pdf GaN FETs EPC eGaN FET,40 V, 1.5 milliohm at 5 V, LGA 3.25 x 2.85
auf Bestellung 1831 Stücke:
Lieferzeit 10-14 Tag (e)
1+11 EUR
10+5.81 EUR
100+5.3 EUR
500+4.82 EUR
1000+4.11 EUR
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EPC2038 EPC2038_datasheet.pdf
EPC2038
Hersteller: EPC
Description: GANFET N-CH 100V 500MA DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 20µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.044 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8.4 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.23 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2038 EPC2038_datasheet.pdf
EPC2038
Hersteller: EPC
Description: GANFET N-CH 100V 500MA DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 20µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.044 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8.4 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 101333 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.08 EUR
10+2.61 EUR
50+1.96 EUR
100+1.76 EUR
500+1.39 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2038ENGR EPC2038_preliminary.pdf
EPC2038ENGR
Hersteller: EPC
Description: TRANS GAN 100V 0.5A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2038ENGR EPC2038_preliminary.pdf
EPC2038ENGR
Hersteller: EPC
Description: TRANS GAN 100V 0.5A BUMPED DIE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2038ENGR EPC2038_preliminary.pdf
EPC2038ENGR
Hersteller: EPC
Description: TRANS GAN 100V 0.5A BUMPED DIE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2039 EPC2039_datasheet.pdf
EPC2039
Hersteller: EPC
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+4.57 EUR
10+2.24 EUR
100+2 EUR
500+1.59 EUR
1000+1.56 EUR
2500+1.33 EUR
5000+1.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2039 EPC2039_datasheet.pdf
EPC2039
Hersteller: EPC
Description: GANFET N-CH 80V 6.8A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
auf Bestellung 72500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.36 EUR
7500+1.23 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2039 EPC2039_datasheet.pdf
EPC2039
Hersteller: EPC
Description: GANFET N-CH 80V 6.8A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
auf Bestellung 75371 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.63 EUR
10+2.98 EUR
50+2.26 EUR
100+2.03 EUR
500+1.63 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2039ENGRT EPC2039_preliminary.pdf
EPC2039ENGRT
Hersteller: EPC
Description: TRANS GAN 80V 6.8A BUMPED DIE
auf Bestellung 4235 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
EPC2039ENGRT EPC2039_preliminary.pdf
EPC2039ENGRT
Hersteller: EPC
Description: TRANS GAN 80V 6.8A BUMPED DIE
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2039ENGRT EPC2039_preliminary.pdf
EPC2039ENGRT
Hersteller: EPC
Description: TRANS GAN 80V 6.8A BUMPED DIE
auf Bestellung 4235 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
EPC2040 EPC2040_datasheet.pdf?ver=Coff4xFfEBnhHPdgfJimOw%3d%3d
EPC2040
Hersteller: EPC
Description: GANFET NCH 15V 3.4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 6 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.95 EUR
7500+0.84 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2040 EPC2040_datasheet.pdf
EPC2040
Hersteller: EPC
GaN FETs EPC eGaN FET,15 V, 30 milliohm at 5 V, BGA 0.85 x 1.2
auf Bestellung 12688 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+3.39 EUR
10+1.62 EUR
100+1.44 EUR
500+1.14 EUR
1000+1.09 EUR
2500+0.93 EUR
5000+0.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2040 EPC2040_datasheet.pdf?ver=Coff4xFfEBnhHPdgfJimOw%3d%3d
EPC2040
Hersteller: EPC
Description: GANFET NCH 15V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 6 V
auf Bestellung 60898 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.44 EUR
10+2.18 EUR
50+1.64 EUR
100+1.46 EUR
500+1.15 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2040ENGR EPC2040_preliminary.pdf
Hersteller: EPC
Description: TRANS GAN 25V BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2040ENGRT EPC2040_preliminary.pdf
EPC2040ENGRT
Hersteller: EPC
Description: TRANS GAN 15V BUMPED DIE
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2040ENGRT EPC2040_preliminary.pdf
EPC2040ENGRT
Hersteller: EPC
Description: TRANS GAN 15V BUMPED DIE
auf Bestellung 4955 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
EPC2040ENGRT EPC2040_preliminary.pdf
EPC2040ENGRT
Hersteller: EPC
Description: TRANS GAN 15V BUMPED DIE
auf Bestellung 4955 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
EPC2044 EPC2044_datasheet.pdf
EPC2044
Hersteller: EPC
Description: GANFET N-CH 100V 9.4A DIE
Input Capacitance (Ciss) (Max) @ Vds: 664 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.42 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2044 EPC2044_datasheet.pdf
EPC2044
Hersteller: EPC
Description: GANFET N-CH 100V 9.4A DIE
Input Capacitance (Ciss) (Max) @ Vds: 664 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
auf Bestellung 2821 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.84 EUR
10+3.11 EUR
50+2.37 EUR
100+2.12 EUR
500+1.7 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2044 EPC2044_datasheet.pdf
EPC2044
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 10.5 milliohm at 5 V, CuPillar 2.15 x 1.25
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+4.76 EUR
10+2.34 EUR
100+2.09 EUR
500+1.68 EUR
1000+1.64 EUR
2500+1.39 EUR
5000+1.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2045 EPC2045_datasheet.pdf
EPC2045
Hersteller: EPC
Description: GANFET N-CH 100V 16A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+4.09 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2045 EPC2045_datasheet.pdf
EPC2045
Hersteller: EPC
Description: GANFET N-CH 100V 16A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 108153 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.82 EUR
10+6.52 EUR
50+5.09 EUR
100+4.63 EUR
500+4.07 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2045 EPC2045_datasheet.pdf
EPC2045
Hersteller: EPC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2045 EPC2045_datasheet.pdf
Hersteller: EPC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2047
Hersteller: EPC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2049ENGRT EPC2049_preliminary.pdf
EPC2049ENGRT
Hersteller: EPC
Description: GANFET N-CH 40V 16A DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2049ENGRT EPC2049_preliminary.pdf
EPC2049ENGRT
Hersteller: EPC
Description: GANFET N-CH 40V 16A DIE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2050 EPC2050_datasheet.pdf
EPC2050
Hersteller: EPC
Description: TRANS GAN BUMPED DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 280 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+5.18 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2050 EPC2050_datasheet.pdf
EPC2050
Hersteller: EPC
Description: TRANS GAN BUMPED DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 280 V
auf Bestellung 9075 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.9 EUR
10+8.7 EUR
50+6.89 EUR
100+6.32 EUR
500+5.99 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2050 EPC2050_datasheet.pdf
EPC2050
Hersteller: EPC
GaN FETs EPC eGaN FET, 350 V, 80 milliohm at 5 V, BGA 1.95 x 1.95
auf Bestellung 597 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+12.96 EUR
10+8.76 EUR
100+6.37 EUR
500+6.01 EUR
1000+5.26 EUR
2500+5.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2051 EPC2051_datasheet.pdf
EPC2051
Hersteller: EPC
Description: GANFET N-CH 100V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 42500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.08 EUR
7500+0.96 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2051 EPC2051_datasheet.pdf
EPC2051
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 25 milliohm at 5 V, BGA 1.3 x 0.85
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+3.58 EUR
10+2.28 EUR
100+1.54 EUR
500+1.21 EUR
1000+1.11 EUR
2500+1 EUR
5000+0.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2051 EPC2051_datasheet.pdf
EPC2051
Hersteller: EPC
Description: GANFET N-CH 100V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 44616 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.86 EUR
10+2.46 EUR
50+1.86 EUR
100+1.65 EUR
500+1.31 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2052 EPC2052_datasheet.pdf
EPC2052
Hersteller: EPC
Description: GANFET N-CH 100V 8.2A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.39 EUR
7500+1.25 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2052 EPC2052_datasheet.pdf
EPC2052
Hersteller: EPC
Description: GANFET N-CH 100V 8.2A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 76877 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.77 EUR
10+3.07 EUR
50+2.33 EUR
100+2.09 EUR
500+1.67 EUR
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EPC2052 EPC2052_datasheet.pdf
EPC2052
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 13.5 milliohm at 5 V, BGA 1.5 x 1.5
auf Bestellung 12003 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+4.44 EUR
10+2.87 EUR
100+1.95 EUR
500+1.55 EUR
1000+1.43 EUR
2500+1.29 EUR
5000+1.19 EUR
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EPC2053 EPC2053_datasheet.pdf
EPC2053
Hersteller: EPC
Description: GANFET N-CH 100V 48A DIE
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Not For New Designs
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+5.5 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2053 EPC2053_datasheet.pdf
EPC2053
Hersteller: EPC
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+14.97 EUR
10+8.08 EUR
100+7.41 EUR
500+7.14 EUR
1000+6.37 EUR
2500+5.74 EUR
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EPC2053 EPC2053_datasheet.pdf
EPC2053
Hersteller: EPC
Description: GANFET N-CH 100V 48A DIE
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Not For New Designs
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
auf Bestellung 14755 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.2 EUR
10+8.92 EUR
100+6.74 EUR
Mindestbestellmenge: 2 Stücke
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EPC2054 EPC2054_datasheet.pdf
EPC2054
Hersteller: EPC
GaN FETs EPC eGaN FET,200 V, 43 milliohm at 5 V, BGA 1.8 x 1.8
auf Bestellung 17846 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+5.05 EUR
10+2.51 EUR
100+2.23 EUR
500+1.8 EUR
1000+1.71 EUR
2500+1.37 EUR
10000+1.34 EUR
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EPC2054 EPC2054_datasheet.pdf
EPC2054
Hersteller: EPC
Description: TRANS GAN 200V DIE 43MOHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 147500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.39 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2054 EPC2054_datasheet.pdf
EPC2054
Hersteller: EPC
Description: TRANS GAN 200V DIE 43MOHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 148742 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.18 EUR
10+3.34 EUR
50+2.53 EUR
100+2.28 EUR
500+1.83 EUR
Mindestbestellmenge: 5 Stücke
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EPC2055 epc2055_datasheet.pdf
EPC2055
Hersteller: EPC
Description: GANFET N-CH 40V 29A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.98 EUR
7500+1.88 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2055 epc2055_datasheet.pdf
EPC2055
Hersteller: EPC
Description: GANFET N-CH 40V 29A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
auf Bestellung 22735 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.39 EUR
10+4.15 EUR
50+3.19 EUR
100+2.88 EUR
500+2.34 EUR
Mindestbestellmenge: 4 Stücke
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EPC2055 epc2055_datasheet.pdf
EPC2055
Hersteller: EPC
GaN FETs EPC eGaN FET, 40 V, 3.5 mohm at 5 V, LGA 2.5 x 1.5
auf Bestellung 5596 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+6.28 EUR
10+3.17 EUR
100+2.84 EUR
500+2.31 EUR
1000+2.28 EUR
2500+1.95 EUR
5000+1.92 EUR
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EPC2057 EPC2057.pdf
EPC2057
Hersteller: EPC
Description: TRANS GAN 50V .0085OHM 4LGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 444 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.37 EUR
7500+1.23 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2057 EPC2057.pdf
EPC2057
Hersteller: EPC
GaN FETs eGaN FET, 50 V, 8.5 milliohm at 5 V, LGA 1.2 x 1.5 mm
auf Bestellung 3621 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+4.08 EUR
10+2.64 EUR
100+1.78 EUR
500+1.43 EUR
1000+1.36 EUR
2500+1.18 EUR
5000+1.17 EUR
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EPC2057 EPC2057.pdf
EPC2057
Hersteller: EPC
Description: TRANS GAN 50V .0085OHM 4LGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 444 pF @ 25 V
auf Bestellung 11270 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.71 EUR
10+3.02 EUR
50+2.3 EUR
100+2.06 EUR
500+1.64 EUR
Mindestbestellmenge: 5 Stücke
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EPC2059 EPC2059_datasheet.pdf
EPC2059
Hersteller: EPC
Description: TRANS GAN 170V DIE .009OHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 170 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 85 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 85
auf Bestellung 13162 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.68 EUR
10+5.71 EUR
50+4.45 EUR
100+4.05 EUR
500+3.47 EUR
Mindestbestellmenge: 3 Stücke
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EPC2059 EPC2059_datasheet.pdf
EPC2059
Hersteller: EPC
GaN FETs EPC eGaN FET, 170 V, 9 milliOhm at 5 V, LGA 2.8 x 1.4
auf Bestellung 14202 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+8.52 EUR
10+4.38 EUR
100+3.97 EUR
500+3.42 EUR
2500+2.92 EUR
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EPC2059 EPC2059_datasheet.pdf
EPC2059
Hersteller: EPC
Description: TRANS GAN 170V DIE .009OHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 170 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 85 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 85
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.84 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2059 TEPC2059_0001.pdf
EPC2059
Hersteller: EPC
Transistor GANFET; 170V; 6V; 9mOhm; 24A; -40°C ~ 150°C; EPC2059 TEPC2059
Anzahl je Verpackung: 2 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
2+22.63 EUR
Mindestbestellmenge: 2 Stücke
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EPC2065 EPC2065_datasheet.pdf
EPC2065
Hersteller: EPC
Description: GAN FET 80V .0036OHM 8BUMP DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+2.95 EUR
3000+2.69 EUR
Mindestbestellmenge: 1000 Stücke
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EPC2065 EPC2065_datasheet.pdf
EPC2065
Hersteller: EPC
Description: GAN FET 80V .0036OHM 8BUMP DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
auf Bestellung 5616 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.29 EUR
10+5.45 EUR
50+4.24 EUR
100+3.86 EUR
500+3.3 EUR
Mindestbestellmenge: 3 Stücke
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EPC2065 EPC2065_datasheet.pdf
EPC2065
Hersteller: EPC
GaN FETs EPC eGaN FET, 80 V, 3.6 milliohm at 5 V, LGA 3.5 x 1.95
auf Bestellung 2531 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+8.32 EUR
10+4.27 EUR
100+3.88 EUR
500+3.31 EUR
1000+2.95 EUR
2000+2.81 EUR
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EPC2066 EPC2066_datasheet.pdf
EPC2066
Hersteller: EPC
Description: TRANSISTOR GAN 40V .001OHM
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 28mA
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 5V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +6V, -4V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+5.74 EUR
3000+5.72 EUR
Mindestbestellmenge: 1000 Stücke
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EPC2066 EPC2066_datasheet.pdf
EPC2066
Hersteller: EPC
Description: TRANSISTOR GAN 40V .001OHM
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 28mA
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 5V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
auf Bestellung 8628 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.61 EUR
10+9.9 EUR
50+7.88 EUR
100+7.24 EUR
500+7.01 EUR
Mindestbestellmenge: 2 Stücke
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EPC2067 EPC2067_datasheet.pdf
EPC2067
Hersteller: EPC
Description: TRANS GAN .0015OHM 40V 14LGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Ta)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 37A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 18mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3267 pF @ 20 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+4.19 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2067 EPC2067_datasheet.pdf
EPC2067
Hersteller: EPC
GaN FETs EPC eGaN FET,40 V, 1.5 milliohm at 5 V, LGA 3.25 x 2.85
auf Bestellung 1831 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+11 EUR
10+5.81 EUR
100+5.3 EUR
500+4.82 EUR
1000+4.11 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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