Produkte > FAIRCHILD SEMICONDUCTOR > Alle Produkte des Herstellers FAIRCHILD SEMICONDUCTOR (2370) > Seite 23 nach 40
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FQPF2N60C | Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 2Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V Power Dissipation (Max): 23W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V |
auf Bestellung 6360 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF2N80YDTU | Fairchild Semiconductor |
Description: MOSFET N-CH 800V 1.5A TO220F-3Packaging: Bulk Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 6.3Ohm @ 750mA, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V |
auf Bestellung 425 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF2N90 | Fairchild Semiconductor |
Description: MOSFET N-CH 900V 1.4A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 7.2Ohm @ 700mA, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
auf Bestellung 52651 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF30N06 | Fairchild Semiconductor |
Description: MOSFET N-CH 60V 21A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 10.5A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V |
auf Bestellung 82723 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF3N60 | Fairchild Semiconductor |
Description: MOSFET N-CH 600V 2A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
auf Bestellung 2360 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF3N80CYDTU | Fairchild Semiconductor |
Description: MOSFET N-CH 800V 3A TO220F-3Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V |
auf Bestellung 1570 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF4N60 | Fairchild Semiconductor |
Description: MOSFET N-CH 600V 2.6A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.3A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
auf Bestellung 4775 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF4N80 | Fairchild Semiconductor |
Description: MOSFET N-CH 800V 2.2A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V |
auf Bestellung 334 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF4N90 | Fairchild Semiconductor |
Description: MOSFET N-CH 900V 2.5A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.25A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
auf Bestellung 744 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF5N60CYDTU | Fairchild Semiconductor |
Description: MOSFET N-CH 600V 4.5A TO220F-3Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
auf Bestellung 2878 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF6N60 | Fairchild Semiconductor |
Description: MOSFET N-CH 600V 3.6A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.8A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
auf Bestellung 887 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF6N60C | Fairchild Semiconductor |
Description: MOSFET N-CH 600V 5.5A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V |
auf Bestellung 5632 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF6N70 | Fairchild Semiconductor |
Description: MOSFET N-CH 700V 3.5A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.75A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 5064 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF7N10L | Fairchild Semiconductor |
Description: MOSFET N-CH 100V 5.5A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 2.75A, 10V Power Dissipation (Max): 23W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V |
auf Bestellung 5887 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF7N65CYDTU | Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, NPackaging: Bulk Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V |
auf Bestellung 1572 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF7N80C | Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 6Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.3A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF8N60CYDTU | Fairchild Semiconductor |
Description: MOSFET N-CH 600V 7.5A TO220F-3Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V |
auf Bestellung 1924 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF8N80CYDTU | Fairchild Semiconductor |
Description: MOSFET N-CH 800V 8A TO220F-3Packaging: Bulk Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4A, 10V Power Dissipation (Max): 59W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V |
auf Bestellung 367 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF9N50 | Fairchild Semiconductor |
Description: MOSFET N-CH 500V 5.3A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 730mOhm @ 2.65A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V |
auf Bestellung 35450 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF9N50C | Fairchild Semiconductor |
Description: MOSFET N-CH 500V 9A TO220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V |
auf Bestellung 404493 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF9N50CF | Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 9Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V |
auf Bestellung 103280 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF9N50CT | Fairchild Semiconductor |
Description: MOSFET N-CH 500V 9A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V |
auf Bestellung 549940 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF9N50T | Fairchild Semiconductor |
Description: MOSFET N-CH 500V 5.3A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 730mOhm @ 2.65A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V |
auf Bestellung 11000 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF9N50YDTU | Fairchild Semiconductor |
Description: MOSFET N-CH 500V 5.3A TO220F-3Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 730mOhm @ 2.65A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V |
auf Bestellung 24800 Stücke: Lieferzeit 10-14 Tag (e) |
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FQU1N50TU | Fairchild Semiconductor |
Description: MOSFET N-CH 500V 1.1A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc) Rds On (Max) @ Id, Vgs: 9Ohm @ 550mA, 10V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
auf Bestellung 1212 Stücke: Lieferzeit 10-14 Tag (e) |
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FQU20N06TU | Fairchild Semiconductor |
Description: MOSFET N-CH 60V 16.8A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 8.4A, 10V Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V |
auf Bestellung 20176 Stücke: Lieferzeit 10-14 Tag (e) |
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FQU2N50BTU | Fairchild Semiconductor |
Description: MOSFET N-CH 500V 1.6A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 5.3Ohm @ 800mA, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V |
auf Bestellung 45243 Stücke: Lieferzeit 10-14 Tag (e) |
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FQU2N80TU | Fairchild Semiconductor |
Description: MOSFET N-CH 800V 1.8A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 6.3Ohm @ 900mA, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V |
auf Bestellung 3037 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU2N90TU-AM002 | Fairchild Semiconductor |
Description: MOSFET N-CH 900V 1.7A I-PAKPackaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
auf Bestellung 977 Stücke: Lieferzeit 10-14 Tag (e) |
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FQU4N25TU | Fairchild Semiconductor |
Description: MOSFET N-CH 250V 3A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.5A, 10V Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 3247 Stücke: Lieferzeit 10-14 Tag (e) |
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FS6S1265REYDTU | Fairchild Semiconductor |
Description: IC OFFLINE SWITCH TO3P-5LPackaging: Tube Package / Case: TO-3P-5 Formed Leads Mounting Type: Through Hole Operating Temperature: -25°C ~ 85°C (TA) Duty Cycle: 95% Frequency - Switching: Up to 150kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Voltage - Supply (Vcc/Vdd): 9V ~ 35V Supplier Device Package: TO-3P-5L (Forming) Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 15 V Control Features: Soft Start, Sync |
auf Bestellung 296 Stücke: Lieferzeit 10-14 Tag (e) |
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FSA1208BQX | Fairchild Semiconductor |
Description: LOW-POWER, EIGHT-PORT, HIGH-SPEEFeatures: Isolation Packaging: Bulk Package / Case: 20-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Memory On-State Resistance (Max): 15Ohm -3db Bandwidth: 1GHz Supplier Device Package: 20-DQFN (2.5x4.5) Voltage - Supply, Single (V+): 2.3V ~ 4.3V Switch Circuit: SPST Multiplexer/Demultiplexer Circuit: 1:1 Number of Channels: 8 |
auf Bestellung 364434 Stücke: Lieferzeit 10-14 Tag (e) |
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FSA1208BQX-P | Fairchild Semiconductor |
Description: LOW-POWER, EIGHT-PORT, HIGH-SPEEPackaging: Bulk |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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FSA2000UMX | Fairchild Semiconductor |
Description: AUTO SELECTING HS-USB SWITCH W/CPackaging: Bulk Features: USB 2.0 Package / Case: 16-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Audio, USB On-State Resistance (Max): 6.5Ohm -3db Bandwidth: 720MHz Supplier Device Package: 16-UMLP (1.8x2.6) Voltage - Supply, Single (V+): 2.7V ~ 4.5V Multiplexer/Demultiplexer Circuit: 1:1 Number of Channels: 1 |
auf Bestellung 5275 Stücke: Lieferzeit 10-14 Tag (e) |
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FSA201L10X | Fairchild Semiconductor |
Description: MULTIMEDIA, USB 2.0 AND AUDIO SWPackaging: Bulk Features: USB 2.0 Package / Case: 10-UFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Audio, USB On-State Resistance (Max): 6Ohm (USB), 1Ohm (Audio) -3db Bandwidth: 400MHz Supplier Device Package: 10-MicroPak™ Voltage - Supply, Single (V+): 2.7V ~ 5.5V Switch Circuit: DPDT Number of Channels: 2 |
auf Bestellung 15963 Stücke: Lieferzeit 10-14 Tag (e) |
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FSA201MUX | Fairchild Semiconductor |
Description: MULTIMEDIA, USB 2.0 AND AUDIO SWPackaging: Bulk Features: USB 2.0 Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Audio, USB On-State Resistance (Max): 6Ohm (USB), 1Ohm (Audio) -3db Bandwidth: 400MHz Supplier Device Package: 10-MSOP Voltage - Supply, Single (V+): 2.7V ~ 5.5V Switch Circuit: DPDT Part Status: Active Number of Channels: 2 |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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FSA203BQX | Fairchild Semiconductor |
Description: DPDTPackaging: Bulk Features: USB 2.0 Package / Case: 20-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Applications: Audio, USB, Video On-State Resistance (Max): 6Ohm (USB), 5Ohm (Audio) -3db Bandwidth: 780MHz Supplier Device Package: 20-DQFN (2.5x4.5) Voltage - Supply, Single (V+): 3V ~ 5.5V Switch Circuit: DPDT Number of Channels: 2 |
auf Bestellung 50500 Stücke: Lieferzeit 10-14 Tag (e) |
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FSA203MTCX | Fairchild Semiconductor |
Description: DPDT, PDSO20Packaging: Bulk Features: USB 2.0 Package / Case: 20-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Audio, USB, Video On-State Resistance (Max): 6Ohm (USB), 5Ohm (Audio) -3db Bandwidth: 780MHz Supplier Device Package: 20-TSSOP Voltage - Supply, Single (V+): 3V ~ 5.5V Switch Circuit: SPDT, DPDT Number of Channels: 2 |
auf Bestellung 9687 Stücke: Lieferzeit 10-14 Tag (e) |
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FSA2270TUMX | Fairchild Semiconductor |
Description: LOW VOLTAGE DUAL-SPDT (0.4 OHM)Features: Break-Before-Make Packaging: Bulk Package / Case: 10-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Audio On-State Resistance (Max): 300mOhm (Typ) -3db Bandwidth: 50MHz Supplier Device Package: 10-UMLP (1.8x1.4) Voltage - Supply, Single (V+): 1.65V ~ 4.3V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 2 |
auf Bestellung 14232 Stücke: Lieferzeit 10-14 Tag (e) |
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| FSA2270TUMX-F106-FS | Fairchild Semiconductor |
Description: LOW VOLTAGE DUAL-SPDT (0.4 OHM) Packaging: Bulk |
auf Bestellung 815000 Stücke: Lieferzeit 10-14 Tag (e) |
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FSA2271TUMX | Fairchild Semiconductor |
Description: LOW VOLTAGE DUAL-SPDT (0.4 OHM)Packaging: Bulk Features: Break-Before-Make Package / Case: 10-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Audio On-State Resistance (Max): 300mOhm (Typ) -3db Bandwidth: 50MHz Supplier Device Package: 10-UMLP (1.8x1.4) Voltage - Supply, Single (V+): 1.65V ~ 4.3V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 2 |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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FSA3157BFHX | Fairchild Semiconductor |
Description: IC SWITCH SPDTX1 15OHM 6MICROPK2Packaging: Bulk Package / Case: 6-UFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 15Ohm -3db Bandwidth: 250MHz Supplier Device Package: 6-MicroPak2™ Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -54dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 6.5pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 1 |
auf Bestellung 69695 Stücke: Lieferzeit 10-14 Tag (e) |
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FSA3157BL6X | Fairchild Semiconductor |
Description: IC SWITCH SPDTX1 15OHM 6MICROPAKPackaging: Bulk Package / Case: 6-UFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 15Ohm -3db Bandwidth: 250MHz Supplier Device Package: 6-MicroPak Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -54dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 6.5pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 1 |
auf Bestellung 3075 Stücke: Lieferzeit 10-14 Tag (e) |
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FSA6157L6X | Fairchild Semiconductor |
Description: FSA6157 - SPDT, AUDIO OR VIDEO SPackaging: Bulk Part Status: Active Package / Case: 6-UFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Applications: Audio, Video On-State Resistance (Max): 2Ohm -3db Bandwidth: 50MHz Supplier Device Package: 6-MicroPak Voltage - Supply, Single (V+): 1.65V ~ 4.3V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 1 |
auf Bestellung 781398 Stücke: Lieferzeit 10-14 Tag (e) |
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FSA646UCX | Fairchild Semiconductor |
Description: 2:1 MIPI D-PHY (2.5GBPS) 4-DATAFeatures: Break-Before-Make Packaging: Bulk Package / Case: 36-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: MIPI On-State Resistance (Max): 6Ohm (Typ) -3db Bandwidth: 2.5GHz Supplier Device Package: 36-WLCSP (2.43x2.43) Voltage - Supply, Single (V+): 1.5V ~ 5V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 4 |
auf Bestellung 23367 Stücke: Lieferzeit 10-14 Tag (e) |
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| FSA9682UCX | Fairchild Semiconductor |
Description: FSA9682Packaging: Bulk Part Status: Active |
auf Bestellung 702000 Stücke: Lieferzeit 10-14 Tag (e) |
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| FSA9683UCX | Fairchild Semiconductor |
Description: USB DEVICEPackaging: Bulk Part Status: Active |
auf Bestellung 1560000 Stücke: Lieferzeit 10-14 Tag (e) |
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FSAV332MTC | Fairchild Semiconductor |
Description: SPST, 4 FUNC, 1 CHANNELPackaging: Tube Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Video On-State Resistance (Max): 10Ohm -3db Bandwidth: 368MHz Supplier Device Package: 14-TSSOP Voltage - Supply, Single (V+): 4.75V ~ 5.25V Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Obsolete Number of Channels: 4 |
auf Bestellung 20665 Stücke: Lieferzeit 10-14 Tag (e) |
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FSAV332MTCX | Fairchild Semiconductor |
Description: SPST, 4 FUNC, 1 CHANNELPackaging: Bulk Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Video On-State Resistance (Max): 10Ohm -3db Bandwidth: 368MHz Supplier Device Package: 14-TSSOP Voltage - Supply, Single (V+): 4.75V ~ 5.25V Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Obsolete Number of Channels: 4 |
auf Bestellung 14694 Stücke: Lieferzeit 10-14 Tag (e) |
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FSAV332QSC | Fairchild Semiconductor |
Description: SPST, 4 FUNC, 1 CHANNEL, CMOSPackaging: Tube Package / Case: 16-LSSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Video On-State Resistance (Max): 10Ohm -3db Bandwidth: 368MHz Supplier Device Package: 16-QSOP Voltage - Supply, Single (V+): 4.75V ~ 5.25V Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Obsolete Number of Channels: 4 |
auf Bestellung 4700 Stücke: Lieferzeit 10-14 Tag (e) |
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FSAV332QSCX | Fairchild Semiconductor |
Description: SPST, 4 FUNC, 1 CHANNEL, CMOSPackaging: Bulk Package / Case: 16-LSSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Video On-State Resistance (Max): 10Ohm -3db Bandwidth: 368MHz Supplier Device Package: 16-QSOP Voltage - Supply, Single (V+): 4.75V ~ 5.25V Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Obsolete Number of Channels: 4 |
auf Bestellung 24462 Stücke: Lieferzeit 10-14 Tag (e) |
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FSB50325 | Fairchild Semiconductor |
Description: MOSFET IPM 250V 1.5A 23-PWRDIPPackaging: Tube Package / Case: 23-PowerDIP Module (0.551", 14.00mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 1.5 A Voltage: 250 V |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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FSB50450 | Fairchild Semiconductor |
Description: MOSFET IPM 500V 1.5A 23-PWRDIPPackaging: Bulk Package / Case: 23-PowerDIP Module (0.551", 14.00mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Active Current: 1.5 A Voltage: 500 V |
auf Bestellung 179 Stücke: Lieferzeit 10-14 Tag (e) |
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| FSB50450A | Fairchild Semiconductor |
Description: MOSFET IPM 500V 1.5A 23-PWRDIPPackaging: Bulk Package / Case: 23-PowerDIP Module (0.573", 14.56mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 1.5 A Voltage: 500 V |
auf Bestellung 175 Stücke: Lieferzeit 10-14 Tag (e) |
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FSB50450AT | Fairchild Semiconductor |
Description: MOSFET IPM 500V 1.5A 23-PWRDIPPackaging: Bulk Package / Case: 23-PowerDIP Module, Offset Leads Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 1.5 A Voltage: 500 V |
auf Bestellung 167 Stücke: Lieferzeit 10-14 Tag (e) |
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| FSB50450L | Fairchild Semiconductor |
Description: AC MOTOR CONTROLLER Packaging: Bulk Type: MOSFET Configuration: 3 Phase Inverter |
auf Bestellung 9290 Stücke: Lieferzeit 10-14 Tag (e) |
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FSB50450T | Fairchild Semiconductor |
Description: MOSFET IPM 500V 1.5A 23-PWRDIPPackaging: Tube Package / Case: 23-PowerDIP Module, Offset Leads Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 1.5 A Voltage: 500 V |
auf Bestellung 29016 Stücke: Lieferzeit 10-14 Tag (e) |
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FSB50450TB | Fairchild Semiconductor |
Description: MOSFET IPM 500V 1.5A 23-PWRDIPPackaging: Tube Package / Case: 23-PowerDIP Module, Offset Leads Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Obsolete Current: 1.5 A Voltage: 500 V |
auf Bestellung 360 Stücke: Lieferzeit 10-14 Tag (e) |
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FSB50450UD | Fairchild Semiconductor |
Description: MOSFET IPM 500V 1.5A 23-PWRDIPPackaging: Bulk Package / Case: 23-PowerDIP Module (0.551", 14.00mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 1.5 A Voltage: 500 V |
auf Bestellung 489 Stücke: Lieferzeit 10-14 Tag (e) |
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FSB50550A | Fairchild Semiconductor |
Description: MOSFET IPM 500V 2A 23-PWRDIP MODPackaging: Bulk Package / Case: 23-PowerDIP Module (0.573", 14.56mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 2 A Voltage: 500 V |
auf Bestellung 551 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQPF2N60C |
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Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
auf Bestellung 6360 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 1.26 EUR |
| FQPF2N80YDTU |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 1.5A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 6.3Ohm @ 750mA, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Description: MOSFET N-CH 800V 1.5A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 6.3Ohm @ 750mA, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 425 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 2.5 EUR |
| FQPF2N90 |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 900V 1.4A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 700mA, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 900V 1.4A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 700mA, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 52651 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 158+ | 2.82 EUR |
| FQPF30N06 |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 60V 21A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 10.5A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V
Description: MOSFET N-CH 60V 21A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 10.5A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V
auf Bestellung 82723 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 356+ | 1.27 EUR |
| FQPF3N60 |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Description: MOSFET N-CH 600V 2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 2360 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 413+ | 1.09 EUR |
| FQPF3N80CYDTU |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 3A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V
Description: MOSFET N-CH 800V 3A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V
auf Bestellung 1570 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 288+ | 1.58 EUR |
| FQPF4N60 |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 2.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.3A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 600V 2.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.3A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 4775 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 293+ | 1.53 EUR |
| FQPF4N80 |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 2.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Description: MOSFET N-CH 800V 2.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 334 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 226+ | 1.98 EUR |
| FQPF4N90 |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 900V 2.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.25A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET N-CH 900V 2.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.25A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 744 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 505+ | 0.89 EUR |
| FQPF5N60CYDTU |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 4.5A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 600V 4.5A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 2878 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 319+ | 1.4 EUR |
| FQPF6N60 |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 3.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.8A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Description: MOSFET N-CH 600V 3.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.8A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 887 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 202+ | 2.23 EUR |
| FQPF6N60C |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 5.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
Description: MOSFET N-CH 600V 5.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
auf Bestellung 5632 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 288+ | 1.56 EUR |
| FQPF6N70 |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 700V 3.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.75A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 700V 3.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.75A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 5064 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 197+ | 2.27 EUR |
| FQPF7N10L |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 100V 5.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2.75A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
Description: MOSFET N-CH 100V 5.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2.75A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
auf Bestellung 5887 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 699+ | 0.64 EUR |
| FQPF7N65CYDTU |
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Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, N
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V
Description: POWER FIELD-EFFECT TRANSISTOR, N
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V
auf Bestellung 1572 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 301+ | 1.5 EUR |
| FQPF7N80C |
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Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.3A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.3A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 169+ | 2.64 EUR |
| FQPF8N60CYDTU |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 7.5A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
Description: MOSFET N-CH 600V 7.5A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
auf Bestellung 1924 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 195+ | 2.3 EUR |
| FQPF8N80CYDTU |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 8A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Description: MOSFET N-CH 800V 8A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 367 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 183+ | 2.45 EUR |
| FQPF9N50 |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 5.3A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 2.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Description: MOSFET N-CH 500V 5.3A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 2.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 35450 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 222+ | 2.01 EUR |
| FQPF9N50C |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 9A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Description: MOSFET N-CH 500V 9A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
auf Bestellung 404493 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 207+ | 2.15 EUR |
| FQPF9N50CF |
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Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
auf Bestellung 103280 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 281+ | 1.59 EUR |
| FQPF9N50CT |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Description: MOSFET N-CH 500V 9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
auf Bestellung 549940 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 262+ | 1.69 EUR |
| FQPF9N50T |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 5.3A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 2.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Description: MOSFET N-CH 500V 5.3A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 2.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 214+ | 2.08 EUR |
| FQPF9N50YDTU |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 5.3A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 2.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Description: MOSFET N-CH 500V 5.3A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 2.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 24800 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 214+ | 2.08 EUR |
| FQU1N50TU |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 1.1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 550mA, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Description: MOSFET N-CH 500V 1.1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 550mA, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 1212 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1137+ | 0.39 EUR |
| FQU20N06TU |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 60V 16.8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 8.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
Description: MOSFET N-CH 60V 16.8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 8.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
auf Bestellung 20176 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 466+ | 0.95 EUR |
| FQU2N50BTU |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 1.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 800mA, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Description: MOSFET N-CH 500V 1.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 800mA, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
auf Bestellung 45243 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 505+ | 0.89 EUR |
| FQU2N80TU |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 1.8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 6.3Ohm @ 900mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Description: MOSFET N-CH 800V 1.8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 6.3Ohm @ 900mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 3037 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 319+ | 1.4 EUR |
| FQU2N90TU-AM002 |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 900V 1.7A I-PAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 900V 1.7A I-PAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 977 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 322+ | 1.38 EUR |
| FQU4N25TU |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 250V 3A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 250V 3A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 3247 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 413+ | 1.09 EUR |
| FS6S1265REYDTU |
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Hersteller: Fairchild Semiconductor
Description: IC OFFLINE SWITCH TO3P-5L
Packaging: Tube
Package / Case: TO-3P-5 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 95%
Frequency - Switching: Up to 150kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Voltage - Supply (Vcc/Vdd): 9V ~ 35V
Supplier Device Package: TO-3P-5L (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start, Sync
Description: IC OFFLINE SWITCH TO3P-5L
Packaging: Tube
Package / Case: TO-3P-5 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 95%
Frequency - Switching: Up to 150kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Voltage - Supply (Vcc/Vdd): 9V ~ 35V
Supplier Device Package: TO-3P-5L (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start, Sync
auf Bestellung 296 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 121+ | 3.7 EUR |
| FSA1208BQX |
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Hersteller: Fairchild Semiconductor
Description: LOW-POWER, EIGHT-PORT, HIGH-SPEE
Features: Isolation
Packaging: Bulk
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Memory
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 20-DQFN (2.5x4.5)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 8
Description: LOW-POWER, EIGHT-PORT, HIGH-SPEE
Features: Isolation
Packaging: Bulk
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Memory
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 20-DQFN (2.5x4.5)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 8
auf Bestellung 364434 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 270+ | 1.68 EUR |
| FSA1208BQX-P |
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auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 270+ | 1.67 EUR |
| FSA2000UMX |
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Hersteller: Fairchild Semiconductor
Description: AUTO SELECTING HS-USB SWITCH W/C
Packaging: Bulk
Features: USB 2.0
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio, USB
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 16-UMLP (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 4.5V
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 1
Description: AUTO SELECTING HS-USB SWITCH W/C
Packaging: Bulk
Features: USB 2.0
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio, USB
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 16-UMLP (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 4.5V
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 1
auf Bestellung 5275 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 466+ | 0.96 EUR |
| FSA201L10X |
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Hersteller: Fairchild Semiconductor
Description: MULTIMEDIA, USB 2.0 AND AUDIO SW
Packaging: Bulk
Features: USB 2.0
Package / Case: 10-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio, USB
On-State Resistance (Max): 6Ohm (USB), 1Ohm (Audio)
-3db Bandwidth: 400MHz
Supplier Device Package: 10-MicroPak™
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Switch Circuit: DPDT
Number of Channels: 2
Description: MULTIMEDIA, USB 2.0 AND AUDIO SW
Packaging: Bulk
Features: USB 2.0
Package / Case: 10-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio, USB
On-State Resistance (Max): 6Ohm (USB), 1Ohm (Audio)
-3db Bandwidth: 400MHz
Supplier Device Package: 10-MicroPak™
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Switch Circuit: DPDT
Number of Channels: 2
auf Bestellung 15963 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 433+ | 1.03 EUR |
| FSA201MUX |
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Hersteller: Fairchild Semiconductor
Description: MULTIMEDIA, USB 2.0 AND AUDIO SW
Packaging: Bulk
Features: USB 2.0
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio, USB
On-State Resistance (Max): 6Ohm (USB), 1Ohm (Audio)
-3db Bandwidth: 400MHz
Supplier Device Package: 10-MSOP
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Switch Circuit: DPDT
Part Status: Active
Number of Channels: 2
Description: MULTIMEDIA, USB 2.0 AND AUDIO SW
Packaging: Bulk
Features: USB 2.0
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio, USB
On-State Resistance (Max): 6Ohm (USB), 1Ohm (Audio)
-3db Bandwidth: 400MHz
Supplier Device Package: 10-MSOP
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Switch Circuit: DPDT
Part Status: Active
Number of Channels: 2
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 387+ | 1.16 EUR |
| FSA203BQX |
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Hersteller: Fairchild Semiconductor
Description: DPDT
Packaging: Bulk
Features: USB 2.0
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: Audio, USB, Video
On-State Resistance (Max): 6Ohm (USB), 5Ohm (Audio)
-3db Bandwidth: 780MHz
Supplier Device Package: 20-DQFN (2.5x4.5)
Voltage - Supply, Single (V+): 3V ~ 5.5V
Switch Circuit: DPDT
Number of Channels: 2
Description: DPDT
Packaging: Bulk
Features: USB 2.0
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: Audio, USB, Video
On-State Resistance (Max): 6Ohm (USB), 5Ohm (Audio)
-3db Bandwidth: 780MHz
Supplier Device Package: 20-DQFN (2.5x4.5)
Voltage - Supply, Single (V+): 3V ~ 5.5V
Switch Circuit: DPDT
Number of Channels: 2
auf Bestellung 50500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 222+ | 2.01 EUR |
| FSA203MTCX |
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Hersteller: Fairchild Semiconductor
Description: DPDT, PDSO20
Packaging: Bulk
Features: USB 2.0
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio, USB, Video
On-State Resistance (Max): 6Ohm (USB), 5Ohm (Audio)
-3db Bandwidth: 780MHz
Supplier Device Package: 20-TSSOP
Voltage - Supply, Single (V+): 3V ~ 5.5V
Switch Circuit: SPDT, DPDT
Number of Channels: 2
Description: DPDT, PDSO20
Packaging: Bulk
Features: USB 2.0
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio, USB, Video
On-State Resistance (Max): 6Ohm (USB), 5Ohm (Audio)
-3db Bandwidth: 780MHz
Supplier Device Package: 20-TSSOP
Voltage - Supply, Single (V+): 3V ~ 5.5V
Switch Circuit: SPDT, DPDT
Number of Channels: 2
auf Bestellung 9687 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 176+ | 2.53 EUR |
| FSA2270TUMX |
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Hersteller: Fairchild Semiconductor
Description: LOW VOLTAGE DUAL-SPDT (0.4 OHM)
Features: Break-Before-Make
Packaging: Bulk
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 300mOhm (Typ)
-3db Bandwidth: 50MHz
Supplier Device Package: 10-UMLP (1.8x1.4)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
Description: LOW VOLTAGE DUAL-SPDT (0.4 OHM)
Features: Break-Before-Make
Packaging: Bulk
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 300mOhm (Typ)
-3db Bandwidth: 50MHz
Supplier Device Package: 10-UMLP (1.8x1.4)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
auf Bestellung 14232 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 519+ | 0.88 EUR |
| FSA2270TUMX-F106-FS |
auf Bestellung 815000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 349+ | 1.3 EUR |
| FSA2271TUMX |
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Hersteller: Fairchild Semiconductor
Description: LOW VOLTAGE DUAL-SPDT (0.4 OHM)
Packaging: Bulk
Features: Break-Before-Make
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 300mOhm (Typ)
-3db Bandwidth: 50MHz
Supplier Device Package: 10-UMLP (1.8x1.4)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
Description: LOW VOLTAGE DUAL-SPDT (0.4 OHM)
Packaging: Bulk
Features: Break-Before-Make
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 300mOhm (Typ)
-3db Bandwidth: 50MHz
Supplier Device Package: 10-UMLP (1.8x1.4)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 519+ | 0.88 EUR |
| FSA3157BFHX |
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Hersteller: Fairchild Semiconductor
Description: IC SWITCH SPDTX1 15OHM 6MICROPK2
Packaging: Bulk
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 6-MicroPak2™
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPDTX1 15OHM 6MICROPK2
Packaging: Bulk
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 6-MicroPak2™
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 69695 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1212+ | 0.37 EUR |
| FSA3157BL6X |
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Hersteller: Fairchild Semiconductor
Description: IC SWITCH SPDTX1 15OHM 6MICROPAK
Packaging: Bulk
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 6-MicroPak
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPDTX1 15OHM 6MICROPAK
Packaging: Bulk
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 6-MicroPak
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 3075 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1212+ | 0.37 EUR |
| FSA6157L6X |
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Hersteller: Fairchild Semiconductor
Description: FSA6157 - SPDT, AUDIO OR VIDEO S
Packaging: Bulk
Part Status: Active
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: Audio, Video
On-State Resistance (Max): 2Ohm
-3db Bandwidth: 50MHz
Supplier Device Package: 6-MicroPak
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
Description: FSA6157 - SPDT, AUDIO OR VIDEO S
Packaging: Bulk
Part Status: Active
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: Audio, Video
On-State Resistance (Max): 2Ohm
-3db Bandwidth: 50MHz
Supplier Device Package: 6-MicroPak
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
auf Bestellung 781398 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 733+ | 0.62 EUR |
| FSA646UCX |
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Hersteller: Fairchild Semiconductor
Description: 2:1 MIPI D-PHY (2.5GBPS) 4-DATA
Features: Break-Before-Make
Packaging: Bulk
Package / Case: 36-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: MIPI
On-State Resistance (Max): 6Ohm (Typ)
-3db Bandwidth: 2.5GHz
Supplier Device Package: 36-WLCSP (2.43x2.43)
Voltage - Supply, Single (V+): 1.5V ~ 5V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
Description: 2:1 MIPI D-PHY (2.5GBPS) 4-DATA
Features: Break-Before-Make
Packaging: Bulk
Package / Case: 36-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: MIPI
On-State Resistance (Max): 6Ohm (Typ)
-3db Bandwidth: 2.5GHz
Supplier Device Package: 36-WLCSP (2.43x2.43)
Voltage - Supply, Single (V+): 1.5V ~ 5V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
auf Bestellung 23367 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 235+ | 1.89 EUR |
| FSA9682UCX |
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auf Bestellung 702000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 176+ | 2.53 EUR |
| FSA9683UCX |
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auf Bestellung 1560000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 182+ | 2.45 EUR |
| FSAV332MTC |
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Hersteller: Fairchild Semiconductor
Description: SPST, 4 FUNC, 1 CHANNEL
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 368MHz
Supplier Device Package: 14-TSSOP
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 4
Description: SPST, 4 FUNC, 1 CHANNEL
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 368MHz
Supplier Device Package: 14-TSSOP
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 4
auf Bestellung 20665 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 454+ | 0.99 EUR |
| FSAV332MTCX |
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Hersteller: Fairchild Semiconductor
Description: SPST, 4 FUNC, 1 CHANNEL
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 368MHz
Supplier Device Package: 14-TSSOP
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 4
Description: SPST, 4 FUNC, 1 CHANNEL
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 368MHz
Supplier Device Package: 14-TSSOP
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 4
auf Bestellung 14694 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 443+ | 1.02 EUR |
| FSAV332QSC |
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Hersteller: Fairchild Semiconductor
Description: SPST, 4 FUNC, 1 CHANNEL, CMOS
Packaging: Tube
Package / Case: 16-LSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 368MHz
Supplier Device Package: 16-QSOP
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 4
Description: SPST, 4 FUNC, 1 CHANNEL, CMOS
Packaging: Tube
Package / Case: 16-LSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 368MHz
Supplier Device Package: 16-QSOP
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 4
auf Bestellung 4700 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 443+ | 1.02 EUR |
| FSAV332QSCX |
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Hersteller: Fairchild Semiconductor
Description: SPST, 4 FUNC, 1 CHANNEL, CMOS
Packaging: Bulk
Package / Case: 16-LSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 368MHz
Supplier Device Package: 16-QSOP
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 4
Description: SPST, 4 FUNC, 1 CHANNEL, CMOS
Packaging: Bulk
Package / Case: 16-LSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 368MHz
Supplier Device Package: 16-QSOP
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 4
auf Bestellung 24462 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 454+ | 0.99 EUR |
| FSB50325 |
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Hersteller: Fairchild Semiconductor
Description: MOSFET IPM 250V 1.5A 23-PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 250 V
Description: MOSFET IPM 250V 1.5A 23-PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 250 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 7.21 EUR |
| FSB50450 |
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Hersteller: Fairchild Semiconductor
Description: MOSFET IPM 500V 1.5A 23-PWRDIP
Packaging: Bulk
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 1.5 A
Voltage: 500 V
Description: MOSFET IPM 500V 1.5A 23-PWRDIP
Packaging: Bulk
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 1.5 A
Voltage: 500 V
auf Bestellung 179 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 45+ | 9.89 EUR |
| FSB50450A |
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Hersteller: Fairchild Semiconductor
Description: MOSFET IPM 500V 1.5A 23-PWRDIP
Packaging: Bulk
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
Description: MOSFET IPM 500V 1.5A 23-PWRDIP
Packaging: Bulk
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
auf Bestellung 175 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 7.67 EUR |
| FSB50450AT |
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Hersteller: Fairchild Semiconductor
Description: MOSFET IPM 500V 1.5A 23-PWRDIP
Packaging: Bulk
Package / Case: 23-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
Description: MOSFET IPM 500V 1.5A 23-PWRDIP
Packaging: Bulk
Package / Case: 23-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
auf Bestellung 167 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 8.06 EUR |
| FSB50450L |
Hersteller: Fairchild Semiconductor
Description: AC MOTOR CONTROLLER
Packaging: Bulk
Type: MOSFET
Configuration: 3 Phase Inverter
Description: AC MOTOR CONTROLLER
Packaging: Bulk
Type: MOSFET
Configuration: 3 Phase Inverter
auf Bestellung 9290 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 8.69 EUR |
| FSB50450T |
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Hersteller: Fairchild Semiconductor
Description: MOSFET IPM 500V 1.5A 23-PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
Description: MOSFET IPM 500V 1.5A 23-PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
auf Bestellung 29016 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 8.05 EUR |
| FSB50450TB |
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Hersteller: Fairchild Semiconductor
Description: MOSFET IPM 500V 1.5A 23-PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Obsolete
Current: 1.5 A
Voltage: 500 V
Description: MOSFET IPM 500V 1.5A 23-PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Obsolete
Current: 1.5 A
Voltage: 500 V
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 11.88 EUR |
| FSB50450UD |
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Hersteller: Fairchild Semiconductor
Description: MOSFET IPM 500V 1.5A 23-PWRDIP
Packaging: Bulk
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
Description: MOSFET IPM 500V 1.5A 23-PWRDIP
Packaging: Bulk
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
auf Bestellung 489 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 9.83 EUR |
| FSB50550A |
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Hersteller: Fairchild Semiconductor
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD
Packaging: Bulk
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 2 A
Voltage: 500 V
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD
Packaging: Bulk
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 2 A
Voltage: 500 V
auf Bestellung 551 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 47+ | 9.66 EUR |

















