Produkte > FAIRCHILD SEMICONDUCTOR > Alle Produkte des Herstellers FAIRCHILD SEMICONDUCTOR (2370) > Seite 26 nach 40
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HGTP7N60B3D | Fairchild Semiconductor |
Description: IGBT 600V 14A TO-220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 26ns/130ns Switching Energy: 160µJ (on), 120µJ (off) Test Condition: 480V, 7A, 50Ohm, 15V Gate Charge: 23 nC Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 60 W |
auf Bestellung 2147 Stücke: Lieferzeit 10-14 Tag (e) |
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| HLMPK155 | Fairchild Semiconductor |
Description: LED RED CLEAR T-1 T/HPackaging: Bulk Package / Case: Radial Color: Red Mounting Type: Through Hole Millicandela Rating: 3mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 1.6V Lens Color: Red Current - Test: 1mA Viewing Angle: 45° Height (Max): 6.30mm Wavelength - Peak: 660nm Supplier Device Package: T-1 Lens Transparency: Clear Lens Style: Round with Domed Top Lens Size: 3mm, T-1 |
auf Bestellung 29527 Stücke: Lieferzeit 10-14 Tag (e) |
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HRF3205 | Fairchild Semiconductor |
Description: MOSFET N-CH 55V 100A TO220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 59A, 10V Power Dissipation (Max): 175W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V |
auf Bestellung 82617 Stücke: Lieferzeit 10-14 Tag (e) |
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HRF3205_NL | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 59A, 10V Power Dissipation (Max): 175W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V |
auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
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HRFZ44N | Fairchild Semiconductor |
Description: MOSFET N-CH 55V 49A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V |
auf Bestellung 12479 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75332S3ST | Fairchild Semiconductor |
Description: MOSFET N-CH 55V 52A D2PAKPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
auf Bestellung 23990 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75344A3 | Fairchild Semiconductor |
Description: MOSFET N-CH 55V 75A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V Power Dissipation (Max): 288.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3P Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4855 pF @ 25 V |
auf Bestellung 616 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75344P3_NL | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V Power Dissipation (Max): 285W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
auf Bestellung 312 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75344S3ST | Fairchild Semiconductor |
Description: MOSFET N-CH 55V 75A D2PAKPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V Power Dissipation (Max): 285W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
auf Bestellung 41485 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75545P3 | Fairchild Semiconductor |
Description: N-CHANNEL ULTRAFET POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V |
auf Bestellung 899 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75545S3 | Fairchild Semiconductor |
Description: MOSFET N-CH 80V 75A I2PAKPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V |
auf Bestellung 3333 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75639S3_NL | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 655 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75639S3S | Fairchild Semiconductor |
Description: MOSFET N-CH 100V 56A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 20230 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75639S3ST | Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 5Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 810 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF76629D3S | Fairchild Semiconductor |
Description: MOSFET N-CH 100V 20A TO252AAPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 25 V |
auf Bestellung 33795 Stücke: Lieferzeit 10-14 Tag (e) |
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HUFA75332S3ST | Fairchild Semiconductor |
Description: MOSFET N-CH 55V 60A D2PAKPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V Power Dissipation (Max): 145W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
auf Bestellung 44255 Stücke: Lieferzeit 10-14 Tag (e) |
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HUFA75545P3 | Fairchild Semiconductor |
Description: MOSFET N-CH 80V 75A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V |
auf Bestellung 345 Stücke: Lieferzeit 10-14 Tag (e) |
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HUFA75639S3ST | Fairchild Semiconductor |
Description: 56A, 100V, 0.025OHM, N-CHANNEL,Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AB (D2PAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1559 Stücke: Lieferzeit 10-14 Tag (e) |
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HUFA75639S3ST-F085A | Fairchild Semiconductor |
Description: MOSFET N-CH 100V 56A D2PAKPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 497 Stücke: Lieferzeit 10-14 Tag (e) |
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ILC6363CIR50X | Fairchild Semiconductor |
Description: IC REG BOOST 5V 1A 8MSOPPackaging: Bulk Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up/Step-Down Current - Output: 1A (Switch) Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 300kHz Voltage - Input (Max): 4.2V Topology: Boost Supplier Device Package: 8-MSOP Synchronous Rectifier: Yes Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 5V |
auf Bestellung 6317 Stücke: Lieferzeit 10-14 Tag (e) |
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ILC6363CIRADJX | Fairchild Semiconductor |
Description: IC REG BOOST ADJ 1A 8MSOPPackaging: Bulk Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up/Step-Down Current - Output: 1A (Switch) Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 300kHz Voltage - Input (Max): 4.2V Topology: Boost Supplier Device Package: 8-MSOP Synchronous Rectifier: Yes Voltage - Output (Max): 6V Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 1.25V |
auf Bestellung 19602 Stücke: Lieferzeit 10-14 Tag (e) |
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ILC6370AP52X | Fairchild Semiconductor |
Description: IC REG BOOST 5.2V 1A SOT89-5Packaging: Bulk Package / Case: SOT-89-5/6 Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 1A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 180kHz Voltage - Input (Max): 10V Topology: Boost Supplier Device Package: SOT-89-5 Voltage - Output (Min/Fixed): 5.2V Part Status: Active |
auf Bestellung 37000 Stücke: Lieferzeit 10-14 Tag (e) |
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ILC6380AP-50 | Fairchild Semiconductor |
Description: IC REG BOOST 5V 100MA SOT89-3Packaging: Bulk Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 100mA Operating Temperature: -30°C ~ 80°C (TA) Output Configuration: Positive Frequency - Switching: 50kHz, 100kHz, 180kHz Voltage - Input (Max): 10V Topology: Boost Supplier Device Package: SOT-89-3 Synchronous Rectifier: No Voltage - Output (Min/Fixed): 5V Part Status: Active |
auf Bestellung 2152 Stücke: Lieferzeit 10-14 Tag (e) |
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ILC6380BP-50 | Fairchild Semiconductor |
Description: IC REG BOOST 5V 100MA SOT89-3Packaging: Bulk Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 100mA Operating Temperature: -30°C ~ 80°C (TA) Output Configuration: Positive Frequency - Switching: 50kHz, 100kHz, 180kHz Voltage - Input (Max): 10V Topology: Boost Supplier Device Package: SOT-89-3 Synchronous Rectifier: No Voltage - Output (Min/Fixed): 5V Part Status: Active |
auf Bestellung 3300 Stücke: Lieferzeit 10-14 Tag (e) |
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ILC6380CP-25 | Fairchild Semiconductor |
Description: IC REG BOOST 2.5V 100MA SOT89-3Packaging: Bulk Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 100mA Operating Temperature: -30°C ~ 80°C (TA) Output Configuration: Positive Frequency - Switching: 50kHz, 100kHz, 180kHz Voltage - Input (Max): 10V Topology: Boost Supplier Device Package: SOT-89-3 Synchronous Rectifier: No Voltage - Output (Min/Fixed): 2.5V Part Status: Active |
auf Bestellung 2992 Stücke: Lieferzeit 10-14 Tag (e) |
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ILC6380CP-33 | Fairchild Semiconductor |
Description: IC REG BOOST 3.3V 100MA SOT89-3Packaging: Bulk Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 100mA Operating Temperature: -30°C ~ 80°C (TA) Output Configuration: Positive Frequency - Switching: 50kHz, 100kHz, 180kHz Voltage - Input (Max): 10V Topology: Boost Supplier Device Package: SOT-89-3 Synchronous Rectifier: No Voltage - Output (Min/Fixed): 3.3V Part Status: Active |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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ILC6380CP-50 | Fairchild Semiconductor |
Description: IC REG BOOST 5V 100MA SOT89-3Packaging: Bulk Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 100mA Operating Temperature: -30°C ~ 80°C (TA) Output Configuration: Positive Frequency - Switching: 50kHz, 100kHz, 180kHz Voltage - Input (Max): 10V Topology: Boost Supplier Device Package: SOT-89-3 Synchronous Rectifier: No Voltage - Output (Min/Fixed): 5V Part Status: Active |
auf Bestellung 2998 Stücke: Lieferzeit 10-14 Tag (e) |
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ILC6381AP-33 | Fairchild Semiconductor |
Description: IC REG BOOST 3.3V 100MA SOT89-3Packaging: Bulk Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 100mA Operating Temperature: -30°C ~ 80°C (TA) Output Configuration: Positive Frequency - Switching: 180kHz Voltage - Input (Max): 10V Topology: Boost Supplier Device Package: SOT-89-3 Synchronous Rectifier: No Voltage - Output (Min/Fixed): 3.3V Part Status: Active |
auf Bestellung 3997 Stücke: Lieferzeit 10-14 Tag (e) |
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ILC6381AP-50 | Fairchild Semiconductor |
Description: IC REG BOOST 5V 100MA SOT89-3Packaging: Bulk Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 100mA Operating Temperature: -30°C ~ 80°C (TA) Output Configuration: Positive Frequency - Switching: 180kHz Voltage - Input (Max): 10V Topology: Boost Supplier Device Package: SOT-89-3 Synchronous Rectifier: No Voltage - Output (Min/Fixed): 5V Part Status: Active |
auf Bestellung 2952 Stücke: Lieferzeit 10-14 Tag (e) |
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ILC6381BP-50 | Fairchild Semiconductor |
Description: IC REG BOOST 5V 100MA SOT89-3Packaging: Bulk Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 100mA Operating Temperature: -30°C ~ 80°C (TA) Output Configuration: Positive Frequency - Switching: 100kHz Voltage - Input (Max): 10V Topology: Boost Supplier Device Package: SOT-89-3 Synchronous Rectifier: No Voltage - Output (Min/Fixed): 5V Part Status: Active |
auf Bestellung 5173 Stücke: Lieferzeit 10-14 Tag (e) |
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ILC6383CIR33X | Fairchild Semiconductor |
Description: IC REG BOOST 3.3V 1A 8MSOPPackaging: Bulk Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 1A (Switch) Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 300kHz Voltage - Input (Max): 3.8V Topology: Boost Supplier Device Package: 8-MSOP Synchronous Rectifier: Yes Voltage - Input (Min): 1V Voltage - Output (Min/Fixed): 3.3V Part Status: Obsolete |
auf Bestellung 3940 Stücke: Lieferzeit 10-14 Tag (e) |
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ILC6383CIRADJX | Fairchild Semiconductor |
Description: IC REG BOOST ADJ 1A 8MSOPPackaging: Bulk Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 1A (Switch) Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 300kHz Voltage - Input (Max): 6V Topology: Boost Supplier Device Package: 8-MSOP Synchronous Rectifier: Yes Voltage - Output (Max): 6V Voltage - Input (Min): 1V Voltage - Output (Min/Fixed): 2.5V Part Status: Obsolete |
auf Bestellung 13430 Stücke: Lieferzeit 10-14 Tag (e) |
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ILC6383CIRAJX | Fairchild Semiconductor |
Description: 1A, 345KHZ CMOS, PDSO8Packaging: Bulk Part Status: Active |
auf Bestellung 3302 Stücke: Lieferzeit 10-14 Tag (e) |
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ILC6390CM-33 | Fairchild Semiconductor |
Description: IC REG BOOST 3.3V 50MA SOT23-5Packaging: Bulk Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 50mA Operating Temperature: -30°C ~ 80°C (TA) Output Configuration: Positive Frequency - Switching: 100kHz, 180kHz Voltage - Input (Max): 10V Topology: Boost Supplier Device Package: SOT-23-5 Synchronous Rectifier: No Voltage - Output (Min/Fixed): 3.3V Part Status: Active |
auf Bestellung 99000 Stücke: Lieferzeit 10-14 Tag (e) |
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ILC6390CP-33 | Fairchild Semiconductor |
Description: IC REG BOOST 3.3V 50MA SOT89-5Packaging: Bulk Package / Case: SOT-89-5/6 Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 50mA Operating Temperature: -30°C ~ 80°C (TA) Output Configuration: Positive Frequency - Switching: 100kHz, 180kHz Voltage - Input (Max): 10V Topology: Boost Supplier Device Package: SOT-89-5 Synchronous Rectifier: No Voltage - Output (Min/Fixed): 3.3V Part Status: Active |
auf Bestellung 746 Stücke: Lieferzeit 10-14 Tag (e) |
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ILC6390CP-50 | Fairchild Semiconductor |
Description: IC REG BOOST 5V 50MA SOT89-5Packaging: Bulk Package / Case: SOT-89-5/6 Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 50mA Operating Temperature: -30°C ~ 80°C (TA) Output Configuration: Positive Frequency - Switching: 100kHz, 180kHz Voltage - Input (Max): 10V Topology: Boost Supplier Device Package: SOT-89-5 Synchronous Rectifier: No Voltage - Output (Min/Fixed): 5V Part Status: Active |
auf Bestellung 664 Stücke: Lieferzeit 10-14 Tag (e) |
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ILC6391CM-50 | Fairchild Semiconductor |
Description: IC REG BOOST 5V 50MA SOT23-5Packaging: Bulk Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 50mA Operating Temperature: -30°C ~ 80°C (TA) Output Configuration: Positive Frequency - Switching: 100kHz, 180kHz Voltage - Input (Max): 10V Topology: Boost Supplier Device Package: SOT-23-5 Synchronous Rectifier: No Voltage - Output (Min/Fixed): 5V Part Status: Active |
auf Bestellung 2630 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF610B | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.65A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V |
auf Bestellung 3625 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF630A_CP001 | Fairchild Semiconductor |
Description: MOSFET N-CH 200V Packaging: Bulk Part Status: Active |
auf Bestellung 223430 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF640ACP001 | Fairchild Semiconductor |
Description: MOSFET N-CH 200V Packaging: Bulk Part Status: Active |
auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF644B-FP001 | Fairchild Semiconductor |
Description: IRF644B - DISCRETE MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
auf Bestellung 636 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF654B | Fairchild Semiconductor |
Description: IRF654B - 21A, 250V, 0.14OHM, N-Packaging: Bulk Part Status: Active |
auf Bestellung 447 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF710 | Fairchild Semiconductor |
Description: MOSFET N-CH 400V 2A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V |
auf Bestellung 18893 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF710B | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V |
auf Bestellung 31593 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF730B | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.75A, 10V Power Dissipation (Max): 73W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
auf Bestellung 465585 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF830B | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.25A, 10V Power Dissipation (Max): 73W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
auf Bestellung 9803 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9540 | Fairchild Semiconductor |
Description: IRF9540 - 19A, 100V, 0.2OHM, P-CPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 180 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFI840BTU | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V Power Dissipation (Max): 3.13W (Ta), 134W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
auf Bestellung 13732 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP254B | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 12.5A, 10V Power Dissipation (Max): 221W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V |
auf Bestellung 11382 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP460C | Fairchild Semiconductor |
Description: MOSFET N-CH 500V 20A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 10A, 10V Power Dissipation (Max): 235W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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IRFR110ATM | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 2.35A, 10V Power Dissipation (Max): 2.5W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V |
auf Bestellung 4197 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR120 | Fairchild Semiconductor |
Description: 8.4A, 100V, 0.27OHM, N-CHANNEL MPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR310BTF | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 850mA,10V Power Dissipation (Max): 2.5W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V |
auf Bestellung 2215 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR420T | Fairchild Semiconductor |
Description: 2.5A, 500V, 3OHM, N-CHANNEL MOSFPackaging: Bulk Part Status: Active |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS250B | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.3A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 10.65A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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IRFS540A | Fairchild Semiconductor |
Description: MOSFET N-CH 100V 17A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 8.5A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V |
auf Bestellung 88937 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS614B | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tj) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.4A, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V |
auf Bestellung 77516 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS630A | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.25A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V |
auf Bestellung 55970 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS630B | Fairchild Semiconductor |
Description: 9A, 200V, 0.4OHM, N-CHANNEL MOSFPackaging: Bulk Part Status: Active |
auf Bestellung 743 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS634B | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Tj) Rds On (Max) @ Id, Vgs: 450mOhm @ 4.05A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
auf Bestellung 4633 Stücke: Lieferzeit 10-14 Tag (e) |
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| HGTP7N60B3D |
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Hersteller: Fairchild Semiconductor
Description: IGBT 600V 14A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
Description: IGBT 600V 14A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
auf Bestellung 2147 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 189+ | 2.36 EUR |
| HLMPK155 |
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Hersteller: Fairchild Semiconductor
Description: LED RED CLEAR T-1 T/H
Packaging: Bulk
Package / Case: Radial
Color: Red
Mounting Type: Through Hole
Millicandela Rating: 3mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.6V
Lens Color: Red
Current - Test: 1mA
Viewing Angle: 45°
Height (Max): 6.30mm
Wavelength - Peak: 660nm
Supplier Device Package: T-1
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 3mm, T-1
Description: LED RED CLEAR T-1 T/H
Packaging: Bulk
Package / Case: Radial
Color: Red
Mounting Type: Through Hole
Millicandela Rating: 3mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.6V
Lens Color: Red
Current - Test: 1mA
Viewing Angle: 45°
Height (Max): 6.30mm
Wavelength - Peak: 660nm
Supplier Device Package: T-1
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 3mm, T-1
auf Bestellung 29527 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3620+ | 0.12 EUR |
| HRF3205 |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 55V 100A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 59A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Description: MOSFET N-CH 55V 100A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 59A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 82617 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 168+ | 2.68 EUR |
| HRF3205_NL |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 59A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 59A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 28.05 EUR |
| HRFZ44N |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 55V 49A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Description: MOSFET N-CH 55V 49A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
auf Bestellung 12479 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 454+ | 0.99 EUR |
| HUF75332S3ST |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 55V 52A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 55V 52A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 23990 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 263+ | 1.71 EUR |
| HUF75344A3 |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 55V 75A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 288.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4855 pF @ 25 V
Description: MOSFET N-CH 55V 75A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 288.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4855 pF @ 25 V
auf Bestellung 616 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 178+ | 2.52 EUR |
| HUF75344P3_NL |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 285W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 285W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 312 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 2.6 EUR |
| HUF75344S3ST |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 285W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 285W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 41485 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 284+ | 1.58 EUR |
| HUF75545P3 |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL ULTRAFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Description: N-CHANNEL ULTRAFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
auf Bestellung 899 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 185+ | 2.44 EUR |
| HUF75545S3 |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 80V 75A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Description: MOSFET N-CH 80V 75A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
auf Bestellung 3333 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 222+ | 2.02 EUR |
| HUF75639S3_NL |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 655 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 2.73 EUR |
| HUF75639S3S |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 100V 56A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 100V 56A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 20230 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 178+ | 2.56 EUR |
| HUF75639S3ST |
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Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 5
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: POWER FIELD-EFFECT TRANSISTOR, 5
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 810 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 160+ | 2.85 EUR |
| HUF76629D3S |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 100V 20A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 25 V
Description: MOSFET N-CH 100V 20A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 25 V
auf Bestellung 33795 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 271+ | 1.66 EUR |
| HUFA75332S3ST |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 55V 60A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 55V 60A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 44255 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 433+ | 1.03 EUR |
| HUFA75545P3 |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 80V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Description: MOSFET N-CH 80V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
auf Bestellung 345 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 216+ | 2.08 EUR |
| HUFA75639S3ST |
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Hersteller: Fairchild Semiconductor
Description: 56A, 100V, 0.025OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: 56A, 100V, 0.025OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1559 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 2.54 EUR |
| HUFA75639S3ST-F085A |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 100V 56A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 56A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 497 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 183+ | 2.48 EUR |
| ILC6363CIR50X |
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Hersteller: Fairchild Semiconductor
Description: IC REG BOOST 5V 1A 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up/Step-Down
Current - Output: 1A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 4.2V
Topology: Boost
Supplier Device Package: 8-MSOP
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 5V
Description: IC REG BOOST 5V 1A 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up/Step-Down
Current - Output: 1A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 4.2V
Topology: Boost
Supplier Device Package: 8-MSOP
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 5V
auf Bestellung 6317 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 330+ | 1.38 EUR |
| ILC6363CIRADJX |
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Hersteller: Fairchild Semiconductor
Description: IC REG BOOST ADJ 1A 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up/Step-Down
Current - Output: 1A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 4.2V
Topology: Boost
Supplier Device Package: 8-MSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 1.25V
Description: IC REG BOOST ADJ 1A 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up/Step-Down
Current - Output: 1A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 4.2V
Topology: Boost
Supplier Device Package: 8-MSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 1.25V
auf Bestellung 19602 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 330+ | 1.37 EUR |
| ILC6370AP52X |
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Hersteller: Fairchild Semiconductor
Description: IC REG BOOST 5.2V 1A SOT89-5
Packaging: Bulk
Package / Case: SOT-89-5/6
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-89-5
Voltage - Output (Min/Fixed): 5.2V
Part Status: Active
Description: IC REG BOOST 5.2V 1A SOT89-5
Packaging: Bulk
Package / Case: SOT-89-5/6
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-89-5
Voltage - Output (Min/Fixed): 5.2V
Part Status: Active
auf Bestellung 37000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 319+ | 1.42 EUR |
| ILC6380AP-50 |
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Hersteller: Fairchild Semiconductor
Description: IC REG BOOST 5V 100MA SOT89-3
Packaging: Bulk
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 50kHz, 100kHz, 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-89-3
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Description: IC REG BOOST 5V 100MA SOT89-3
Packaging: Bulk
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 50kHz, 100kHz, 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-89-3
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 5V
Part Status: Active
auf Bestellung 2152 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 224+ | 2.02 EUR |
| ILC6380BP-50 |
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Hersteller: Fairchild Semiconductor
Description: IC REG BOOST 5V 100MA SOT89-3
Packaging: Bulk
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 50kHz, 100kHz, 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-89-3
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Description: IC REG BOOST 5V 100MA SOT89-3
Packaging: Bulk
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 50kHz, 100kHz, 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-89-3
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 5V
Part Status: Active
auf Bestellung 3300 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 224+ | 2.02 EUR |
| ILC6380CP-25 |
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Hersteller: Fairchild Semiconductor
Description: IC REG BOOST 2.5V 100MA SOT89-3
Packaging: Bulk
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 50kHz, 100kHz, 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-89-3
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 2.5V
Part Status: Active
Description: IC REG BOOST 2.5V 100MA SOT89-3
Packaging: Bulk
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 50kHz, 100kHz, 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-89-3
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 2.5V
Part Status: Active
auf Bestellung 2992 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 224+ | 2.02 EUR |
| ILC6380CP-33 |
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Hersteller: Fairchild Semiconductor
Description: IC REG BOOST 3.3V 100MA SOT89-3
Packaging: Bulk
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 50kHz, 100kHz, 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-89-3
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Description: IC REG BOOST 3.3V 100MA SOT89-3
Packaging: Bulk
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 50kHz, 100kHz, 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-89-3
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 224+ | 2.02 EUR |
| ILC6380CP-50 |
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Hersteller: Fairchild Semiconductor
Description: IC REG BOOST 5V 100MA SOT89-3
Packaging: Bulk
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 50kHz, 100kHz, 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-89-3
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Description: IC REG BOOST 5V 100MA SOT89-3
Packaging: Bulk
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 50kHz, 100kHz, 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-89-3
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 5V
Part Status: Active
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 224+ | 2.02 EUR |
| ILC6381AP-33 |
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Hersteller: Fairchild Semiconductor
Description: IC REG BOOST 3.3V 100MA SOT89-3
Packaging: Bulk
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-89-3
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Description: IC REG BOOST 3.3V 100MA SOT89-3
Packaging: Bulk
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-89-3
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
auf Bestellung 3997 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 202+ | 2.25 EUR |
| ILC6381AP-50 |
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Hersteller: Fairchild Semiconductor
Description: IC REG BOOST 5V 100MA SOT89-3
Packaging: Bulk
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-89-3
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Description: IC REG BOOST 5V 100MA SOT89-3
Packaging: Bulk
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-89-3
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 5V
Part Status: Active
auf Bestellung 2952 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 202+ | 2.25 EUR |
| ILC6381BP-50 |
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Hersteller: Fairchild Semiconductor
Description: IC REG BOOST 5V 100MA SOT89-3
Packaging: Bulk
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-89-3
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Description: IC REG BOOST 5V 100MA SOT89-3
Packaging: Bulk
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-89-3
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 5V
Part Status: Active
auf Bestellung 5173 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 202+ | 2.25 EUR |
| ILC6383CIR33X |
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Hersteller: Fairchild Semiconductor
Description: IC REG BOOST 3.3V 1A 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 1A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 3.8V
Topology: Boost
Supplier Device Package: 8-MSOP
Synchronous Rectifier: Yes
Voltage - Input (Min): 1V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
Description: IC REG BOOST 3.3V 1A 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 1A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 3.8V
Topology: Boost
Supplier Device Package: 8-MSOP
Synchronous Rectifier: Yes
Voltage - Input (Min): 1V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
auf Bestellung 3940 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 330+ | 1.37 EUR |
| ILC6383CIRADJX |
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Hersteller: Fairchild Semiconductor
Description: IC REG BOOST ADJ 1A 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 1A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 6V
Topology: Boost
Supplier Device Package: 8-MSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 1V
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
Description: IC REG BOOST ADJ 1A 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 1A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 6V
Topology: Boost
Supplier Device Package: 8-MSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 1V
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
auf Bestellung 13430 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 330+ | 1.37 EUR |
| ILC6383CIRAJX |
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Hersteller: Fairchild Semiconductor
Description: 1A, 345KHZ CMOS, PDSO8
Packaging: Bulk
Part Status: Active
Description: 1A, 345KHZ CMOS, PDSO8
Packaging: Bulk
Part Status: Active
auf Bestellung 3302 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 151+ | 3 EUR |
| ILC6390CM-33 |
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Hersteller: Fairchild Semiconductor
Description: IC REG BOOST 3.3V 50MA SOT23-5
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 50mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz, 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-23-5
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Description: IC REG BOOST 3.3V 50MA SOT23-5
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 50mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz, 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-23-5
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
auf Bestellung 99000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 2.17 EUR |
| ILC6390CP-33 |
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Hersteller: Fairchild Semiconductor
Description: IC REG BOOST 3.3V 50MA SOT89-5
Packaging: Bulk
Package / Case: SOT-89-5/6
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 50mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz, 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-89-5
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Description: IC REG BOOST 3.3V 50MA SOT89-5
Packaging: Bulk
Package / Case: SOT-89-5/6
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 50mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz, 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-89-5
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
auf Bestellung 746 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 2.17 EUR |
| ILC6390CP-50 |
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Hersteller: Fairchild Semiconductor
Description: IC REG BOOST 5V 50MA SOT89-5
Packaging: Bulk
Package / Case: SOT-89-5/6
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 50mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz, 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-89-5
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Description: IC REG BOOST 5V 50MA SOT89-5
Packaging: Bulk
Package / Case: SOT-89-5/6
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 50mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz, 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-89-5
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 5V
Part Status: Active
auf Bestellung 664 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 2.17 EUR |
| ILC6391CM-50 |
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Hersteller: Fairchild Semiconductor
Description: IC REG BOOST 5V 50MA SOT23-5
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 50mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz, 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-23-5
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Description: IC REG BOOST 5V 50MA SOT23-5
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 50mA
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz, 180kHz
Voltage - Input (Max): 10V
Topology: Boost
Supplier Device Package: SOT-23-5
Synchronous Rectifier: No
Voltage - Output (Min/Fixed): 5V
Part Status: Active
auf Bestellung 2630 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 2.17 EUR |
| IRF610B |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.65A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.65A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
auf Bestellung 3625 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 606+ | 0.76 EUR |
| IRF630A_CP001 |
auf Bestellung 223430 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 478+ | 0.94 EUR |
| IRF640ACP001 |
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 235+ | 1.9 EUR |
| IRF644B-FP001 |
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Hersteller: Fairchild Semiconductor
Description: IRF644B - DISCRETE MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: IRF644B - DISCRETE MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 636 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 133+ | 3.38 EUR |
| IRF654B |
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Hersteller: Fairchild Semiconductor
Description: IRF654B - 21A, 250V, 0.14OHM, N-
Packaging: Bulk
Part Status: Active
Description: IRF654B - 21A, 250V, 0.14OHM, N-
Packaging: Bulk
Part Status: Active
auf Bestellung 447 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 214+ | 2.08 EUR |
| IRF710 | ![]() |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 400V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
Description: MOSFET N-CH 400V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
auf Bestellung 18893 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 505+ | 0.89 EUR |
| IRF710B |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
auf Bestellung 31593 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1137+ | 0.39 EUR |
| IRF730B |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.75A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.75A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 465585 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 649+ | 0.69 EUR |
| IRF830B |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
auf Bestellung 9803 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 349+ | 1.29 EUR |
| IRF9540 | ![]() |
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Hersteller: Fairchild Semiconductor
Description: IRF9540 - 19A, 100V, 0.2OHM, P-C
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: IRF9540 - 19A, 100V, 0.2OHM, P-C
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 151+ | 2.98 EUR |
| IRFI840BTU |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 3.13W (Ta), 134W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 3.13W (Ta), 134W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 13732 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 443+ | 1.02 EUR |
| IRFP254B |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12.5A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12.5A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 11382 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 308+ | 1.45 EUR |
| IRFP460C |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 20A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFR110ATM |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 2.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 2.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
auf Bestellung 4197 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 757+ | 0.59 EUR |
| IRFR120 |
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Hersteller: Fairchild Semiconductor
Description: 8.4A, 100V, 0.27OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Description: 8.4A, 100V, 0.27OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 454+ | 0.99 EUR |
| IRFR310BTF |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 850mA,10V
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 850mA,10V
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
auf Bestellung 2215 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1514+ | 0.3 EUR |
| IRFR420T |
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Hersteller: Fairchild Semiconductor
Description: 2.5A, 500V, 3OHM, N-CHANNEL MOSF
Packaging: Bulk
Part Status: Active
Description: 2.5A, 500V, 3OHM, N-CHANNEL MOSF
Packaging: Bulk
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 303+ | 1.49 EUR |
| IRFS250B |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10.65A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10.65A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS540A |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 100V 17A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 8.5A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
Description: MOSFET N-CH 100V 17A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 8.5A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
auf Bestellung 88937 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 288+ | 1.58 EUR |
| IRFS614B |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tj)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.4A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tj)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.4A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V
auf Bestellung 77516 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1137+ | 0.39 EUR |
| IRFS630A |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.25A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.25A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
auf Bestellung 55970 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 466+ | 0.96 EUR |
| IRFS630B |
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Hersteller: Fairchild Semiconductor
Description: 9A, 200V, 0.4OHM, N-CHANNEL MOSF
Packaging: Bulk
Part Status: Active
Description: 9A, 200V, 0.4OHM, N-CHANNEL MOSF
Packaging: Bulk
Part Status: Active
auf Bestellung 743 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 363+ | 1.24 EUR |
| IRFS634B |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tj)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.05A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tj)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.05A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 4633 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1137+ | 0.39 EUR |


















