Produkte > FAIRCHILD SEMICONDUCTOR > Alle Produkte des Herstellers FAIRCHILD SEMICONDUCTOR (12438) > Seite 82 nach 208
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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KSE13007FH2SMTU | Fairchild Semiconductor |
Description: POWER BIPOLAR TRANSISTOR NPNPart Status: Active Supplier Device Package: TO-220F-3 Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector (Ic) (Max): 8A Power - Max: 40W Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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KSE13009TU | Fairchild Semiconductor |
Description: POWER BIPOLAR TRANSISTOR NPNPart Status: Active Supplier Device Package: TO-220-3 Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector (Ic) (Max): 12A Power - Max: 100W Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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74F189SJ | Fairchild Semiconductor |
Description: IC RAM 64BIT PARALLEL 16SOPDigiKey Programmable: Not Verified Memory Organization: 16 x 4 Access Time: 27 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 29ns Part Status: Active Supplier Device Package: 16-SOP Memory Format: RAM Technology: RAM Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 64bit Mounting Type: Surface Mount Package / Case: 16-SOIC (0.209", 5.30mm Width) Packaging: Bulk |
auf Bestellung 1025 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75344P3_NL | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V Power Dissipation (Max): 285W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
auf Bestellung 312 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFW720BTMNL | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETMounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.13W (Ta), 49W (Tc) Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.65A, 10V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 11200 Stücke: Lieferzeit 10-14 Tag (e) |
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KSE13007FSMTU | Fairchild Semiconductor |
Description: POWER BIPOLAR TRANSISTOR NPNPart Status: Active Supplier Device Package: TO-220F-3 Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector (Ic) (Max): 8A Power - Max: 80W Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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74LS139PC | Fairchild Semiconductor |
Description: DECIMAL DECODER, LS SERIESPart Status: Active Supplier Device Package: 16-PDIP Voltage Supply Source: Single Supply Current - Output High, Low: 400µA, 8mA Independent Circuits: 2 Voltage - Supply: 4.75V ~ 5.25V Operating Temperature: -20°C ~ 75°C Type: Decoder/Demultiplexer Circuit: 2 x 2:4 Mounting Type: Through Hole Package / Case: 16-DIP Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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KSE13007H2SMTU | Fairchild Semiconductor |
Description: POWER BIPOLAR TRANSISTOR NPNPart Status: Active Supplier Device Package: TO-220-3 Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector (Ic) (Max): 8A Power - Max: 80W Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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HUF75339G3_NL | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 60 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
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HUF75343S3_NL | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Bulk |
auf Bestellung 360 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75332P3_NL | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 145W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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74F219SJ | Fairchild Semiconductor |
Description: IC RAM 64BIT PARALLEL 16SOPMemory Interface: Parallel Write Cycle Time - Word, Page: 29ns Part Status: Active Supplier Device Package: 16-SOP Memory Format: RAM Technology: RAM Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 64bit Mounting Type: Surface Mount Package / Case: 16-SOIC (0.209", 5.30mm Width) Packaging: Bulk DigiKey Programmable: Not Verified Memory Organization: 16 x 4 Access Time: 27 ns |
auf Bestellung 323 Stücke: Lieferzeit 10-14 Tag (e) |
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FM25C160UN | Fairchild Semiconductor |
Description: IC EEPROM 16KBIT SPI 2.1MHZ 8DIPPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2.1 MHz Memory Format: EEPROM Supplier Device Package: 8-DIP Part Status: Active Write Cycle Time - Word, Page: 10ms Memory Interface: SPI Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1727 Stücke: Lieferzeit 10-14 Tag (e) |
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| FM25C160ULZEM8 | Fairchild Semiconductor |
Description: IC EEPROM 16KBIT SPI 1MHZ 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 15ms Memory Interface: SPI Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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CD4014BCM | Fairchild Semiconductor |
Description: PARALLEL IN SERIAL OUT, 8-BIT,Packaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Function: Parallel or Serial to Serial Logic Type: Shift Register Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 15V Supplier Device Package: 16-SOIC Part Status: Active Number of Bits per Element: 8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
| FM25C160UVM8 | Fairchild Semiconductor |
Description: IC EEPROM 16KBIT SPI 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2.1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 10ms Memory Interface: SPI Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| FM25C160ULVM8 | Fairchild Semiconductor |
Description: IC EEPROM 16KBIT SPI 1MHZ 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 15ms Memory Interface: SPI Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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NM24C65UFM8 | Fairchild Semiconductor |
Description: IC EEPROM 64KBIT I2C 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 10ms Memory Interface: I²C Access Time: 900 ns Memory Organization: 8K x 8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 95 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
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MPSA14D26Z | Fairchild Semiconductor |
Description: TRANS NPN DARL 30V 1.2A TO92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 1.2 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
| FM25C160ULM8 | Fairchild Semiconductor |
Description: IC EEPROM 16KBIT SPI 1MHZ 8SOICMemory Interface: SPI Write Cycle Time - Word, Page: 15ms Part Status: Active Supplier Device Package: 8-SOIC Memory Format: EEPROM Clock Frequency: 1 MHz Technology: EEPROM Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Non-Volatile Memory Size: 16Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk DigiKey Programmable: Not Verified Memory Organization: 2K x 8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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NM93C46LM8 | Fairchild Semiconductor |
Description: IC EEPROM 1KBIT MICROWIRE 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.7V ~ 5.5V Technology: EEPROM Clock Frequency: 250 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 15ms Memory Interface: Microwire Memory Organization: 64 x 16 DigiKey Programmable: Not Verified |
auf Bestellung 36120 Stücke: Lieferzeit 10-14 Tag (e) |
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| NM25C160LZEM8 | Fairchild Semiconductor |
Description: IC EEPROM 16KBIT SPI 1MHZ 8SOICDigiKey Programmable: Not Verified Memory Organization: 2K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 15ms Part Status: Active Supplier Device Package: 8-SOIC Memory Format: EEPROM Clock Frequency: 1 MHz Technology: EEPROM Voltage - Supply: 2.7V ~ 4.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 16Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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NM25C160M8X | Fairchild Semiconductor |
Description: IC EEPROM 16KBIT SPI 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2.1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 10ms Memory Interface: SPI Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 517 Stücke: Lieferzeit 10-14 Tag (e) |
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74LS74APC | Fairchild Semiconductor |
Description: DUAL D-TYPE FLIP FLOPPackaging: Bulk Package / Case: 14-DIP Output Type: Complementary Mounting Type: Through Hole Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.75V ~ 5.25V Current - Quiescent (Iq): 8 mA Trigger Type: Positive Edge Clock Frequency: 30 MHz Supplier Device Package: 14-PDIP Max Propagation Delay @ V, Max CL: 35ns @ 5V, 15pF Part Status: Active Number of Bits per Element: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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NM93C56AN | Fairchild Semiconductor |
Description: IC EEPROM 2KBIT MICROWIRE 8DIPPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-DIP Part Status: Active Write Cycle Time - Word, Page: 10ms Memory Interface: Microwire Memory Organization: 128 x 16 DigiKey Programmable: Not Verified |
auf Bestellung 3780 Stücke: Lieferzeit 10-14 Tag (e) |
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SS9015DBU | Fairchild Semiconductor |
Description: TRANS PNP 45V 0.1A TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 5mA, 100mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 5V Frequency - Transition: 190MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 450 mW |
auf Bestellung 753175 Stücke: Lieferzeit 10-14 Tag (e) |
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NM93C66MT8X | Fairchild Semiconductor |
Description: IC EEPROM 4KBIT MICROWIRE 8TSSOPPackaging: Bulk Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Part Status: Active Write Cycle Time - Word, Page: 10ms Memory Interface: Microwire Memory Organization: 256 x 16 DigiKey Programmable: Not Verified |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NM93C66AN | Fairchild Semiconductor |
Description: IC EEPROM 4KBIT MICROWIRE 8DIPPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-DIP Part Status: Active Write Cycle Time - Word, Page: 10ms Memory Interface: Microwire Memory Organization: 512 x 8, 256 x 16 DigiKey Programmable: Not Verified |
auf Bestellung 1105 Stücke: Lieferzeit 10-14 Tag (e) |
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SSF7N60B | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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CD4010CMX | Fairchild Semiconductor |
Description: CMOS HEX 1-INPUT NON-INVERT GATE Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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SSI7N60BTU | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V Power Dissipation (Max): 3.13W (Ta), 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
auf Bestellung 964 Stücke: Lieferzeit 10-14 Tag (e) |
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NM25C160EM8 | Fairchild Semiconductor |
Description: IC EEPROM 16KBIT SPI 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2.1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 10ms Memory Interface: SPI Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 475 Stücke: Lieferzeit 10-14 Tag (e) |
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SSR1N60BTF | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Tc) Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V |
auf Bestellung 76000 Stücke: Lieferzeit 10-14 Tag (e) |
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NM93C86ALZN | Fairchild Semiconductor |
Description: IC EEPROM 16KBIT MICROWIRE 8DIPPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-DIP Part Status: Active Write Cycle Time - Word, Page: 10ms Memory Interface: Microwire Memory Organization: 1K x 16, 2K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1410 Stücke: Lieferzeit 10-14 Tag (e) |
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FM25C160UM8 | Fairchild Semiconductor |
Description: IC EEPROM 16KBIT SPI 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2.1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 10ms Memory Interface: SPI Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1567 Stücke: Lieferzeit 10-14 Tag (e) |
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| RCB004-12 | Fairchild Semiconductor |
Description: DC-DC REGULATED POWER MODULEPackaging: Bulk Package / Case: 40-SMD Module Voltage - Output: 1.3V ~ 3.5V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 4.75V ~ 5.25V, 11.4V ~ 12.6V Operating Temperature: 0°C ~ 60°C (TA) Applications: Converter, Intel Pentium® II |
auf Bestellung 7085 Stücke: Lieferzeit 10-14 Tag (e) |
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NM93C86ALN | Fairchild Semiconductor |
Description: IC EEPROM 16KBIT MICROWIRE 8DIPPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-DIP Part Status: Active Write Cycle Time - Word, Page: 10ms Memory Interface: Microwire Memory Organization: 1K x 16, 2K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 23070 Stücke: Lieferzeit 10-14 Tag (e) |
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SSR4N60BTM | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V Power Dissipation (Max): 2.5W (Ta), 49W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V |
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Im Einkaufswagen Stück im Wert von UAH | ||
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SSTV16857MTDX | Fairchild Semiconductor |
Description: D FLIP-FLOP, SSTV SERIES, 14-BITPackaging: Bulk Package / Case: 48-TFSOP (0.240", 6.10mm Width) Mounting Type: Surface Mount Number of Bits: 14 Logic Type: Registered Buffer with SSTL_2 Compatible I/O for DDR Operating Temperature: 0°C ~ 70°C Supply Voltage: 2.3V ~ 2.7V Supplier Device Package: 48-TSSOP |
auf Bestellung 17221 Stücke: Lieferzeit 10-14 Tag (e) |
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SSP4N90A | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 2A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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MM74HC161MTCX | Fairchild Semiconductor |
Description: IC BINARY COUNTER 4-BIT 16TSSOPPackaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -55°C ~ 125°C Direction: Up Trigger Type: Positive Edge Timing: Synchronous Supplier Device Package: 16-TSSOP Part Status: Active Voltage - Supply: 2 V ~ 6 V Count Rate: 40 MHz Number of Bits per Element: 4 |
auf Bestellung 19925 Stücke: Lieferzeit 10-14 Tag (e) |
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SSP1N60A | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V |
auf Bestellung 3893 Stücke: Lieferzeit 10-14 Tag (e) |
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| RFD14N05L_NL | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 5V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: I-PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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NM24C16LEN | Fairchild Semiconductor |
Description: IC EEPROM 16KBIT I2C 100KHZ 8DIPMemory Organization: 2K x 8 Access Time: 3.5 µs Memory Interface: I2C Write Cycle Time - Word, Page: 15ms Part Status: Active Supplier Device Package: 8-DIP Memory Format: EEPROM Clock Frequency: 100 kHz Technology: EEPROM Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 16Kbit Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Bulk DigiKey Programmable: Not Verified |
auf Bestellung 815 Stücke: Lieferzeit 10-14 Tag (e) |
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SSW7N60BTM | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V Power Dissipation (Max): 3.13W (Ta), 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
auf Bestellung 697 Stücke: Lieferzeit 10-14 Tag (e) |
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MM74HC148N | Fairchild Semiconductor |
Description: IC PRIORITY ENCODER 1X8:3 16PDIPPackaging: Bulk Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Circuit: 1 x 8:3 Type: Priority Encoder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Supplier Device Package: 16-PDIP Part Status: Active |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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TL494CDX | Fairchild Semiconductor |
Description: SWITCHING CONTROLLERPackaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down, Step-Up/Step-Down Operating Temperature: 0°C ~ 70°C (TA) Output Configuration: Positive Frequency - Switching: 40kHz Topology: Buck, Push-Pull Voltage - Supply (Vcc/Vdd): 7V ~ 40V Supplier Device Package: 16-SOIC Synchronous Rectifier: Yes Control Features: Dead Time Control, Frequency Control Output Phases: 1 Duty Cycle (Max): 48% Clock Sync: No Part Status: Active Number of Outputs: 1 |
auf Bestellung 6188 Stücke: Lieferzeit 10-14 Tag (e) |
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RF1S50N06SM9A | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V Power Dissipation (Max): 131W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V |
auf Bestellung 7154 Stücke: Lieferzeit 10-14 Tag (e) |
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SGH15N120RUFDTU | Fairchild Semiconductor |
Description: IGBT 1200V 24A TO-3PPackaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A Supplier Device Package: TO-3P Td (on/off) @ 25°C: 20ns/60ns Test Condition: 600V, 15A, 20Ohm, 15V Gate Charge: 108 nC Part Status: Active Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 180 W |
auf Bestellung 626 Stücke: Lieferzeit 10-14 Tag (e) |
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SGL25N120RUFTU | Fairchild Semiconductor |
Description: IGBT, 40A, 1200V, N-CHANNELPackaging: Bulk Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A Td (on/off) @ 25°C: 30ns/70ns Switching Energy: 1.6mJ (on), 1.63mJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 165 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 270 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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NM25C160M8 | Fairchild Semiconductor |
Description: IC EEPROM 16KBIT SPI 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2.1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 10ms Memory Interface: SPI Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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RFP50N06_NL | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V Power Dissipation (Max): 131W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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MM74HCT14MXNL | Fairchild Semiconductor |
Description: IC XNOR 4-CIR 2-IN 14-SOICPackaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: XNOR (Exclusive NOR) Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.9V ~ 2.1V Input Logic Level - Low: 0.5V ~ 0.6V Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
auf Bestellung 72500 Stücke: Lieferzeit 10-14 Tag (e) |
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PN2222ARP | Fairchild Semiconductor |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPower - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: TO-92-3 Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 10nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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RFD14N05SM9A_NL | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252, (D-Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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RFD14N05SM_NL | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252, (D-Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
| SSF10N80A | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-3PF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V |
auf Bestellung 1381 Stücke: Lieferzeit 10-14 Tag (e) |
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SSI4N60BTU | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V Power Dissipation (Max): 3.13W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V |
auf Bestellung 50126 Stücke: Lieferzeit 10-14 Tag (e) |
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| SGH20N120RUFDTU | Fairchild Semiconductor |
Description: IGBT, 32A, 1200V, N-CHANNELPackaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-3P Td (on/off) @ 25°C: 30ns/70ns Switching Energy: 1.3mJ (on), 1.3mJ (off) Test Condition: 600V, 20A, 15Ohm, 15V Gate Charge: 140 nC Part Status: Active Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 230 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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SSR4N60BTF | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V Power Dissipation (Max): 2.5W (Ta), 49W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| KSE13007FH2SMTU |
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Hersteller: Fairchild Semiconductor
Description: POWER BIPOLAR TRANSISTOR NPN
Part Status: Active
Supplier Device Package: TO-220F-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): 8A
Power - Max: 40W
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: POWER BIPOLAR TRANSISTOR NPN
Part Status: Active
Supplier Device Package: TO-220F-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): 8A
Power - Max: 40W
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSE13009TU |
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Hersteller: Fairchild Semiconductor
Description: POWER BIPOLAR TRANSISTOR NPN
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): 12A
Power - Max: 100W
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: POWER BIPOLAR TRANSISTOR NPN
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): 12A
Power - Max: 100W
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74F189SJ |
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Hersteller: Fairchild Semiconductor
Description: IC RAM 64BIT PARALLEL 16SOP
DigiKey Programmable: Not Verified
Memory Organization: 16 x 4
Access Time: 27 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 29ns
Part Status: Active
Supplier Device Package: 16-SOP
Memory Format: RAM
Technology: RAM
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 64bit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Bulk
Description: IC RAM 64BIT PARALLEL 16SOP
DigiKey Programmable: Not Verified
Memory Organization: 16 x 4
Access Time: 27 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 29ns
Part Status: Active
Supplier Device Package: 16-SOP
Memory Format: RAM
Technology: RAM
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 64bit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Bulk
auf Bestellung 1025 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 84+ | 6.91 EUR |
| HUF75344P3_NL |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 285W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 285W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 312 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 173+ | 3.19 EUR |
| IRFW720BTMNL |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.65A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: N-CHANNEL POWER MOSFET
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.65A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 11200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1665+ | 0.35 EUR |
| KSE13007FSMTU |
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Hersteller: Fairchild Semiconductor
Description: POWER BIPOLAR TRANSISTOR NPN
Part Status: Active
Supplier Device Package: TO-220F-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): 8A
Power - Max: 80W
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: POWER BIPOLAR TRANSISTOR NPN
Part Status: Active
Supplier Device Package: TO-220F-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): 8A
Power - Max: 80W
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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| 74LS139PC |
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Hersteller: Fairchild Semiconductor
Description: DECIMAL DECODER, LS SERIES
Part Status: Active
Supplier Device Package: 16-PDIP
Voltage Supply Source: Single Supply
Current - Output High, Low: 400µA, 8mA
Independent Circuits: 2
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -20°C ~ 75°C
Type: Decoder/Demultiplexer
Circuit: 2 x 2:4
Mounting Type: Through Hole
Package / Case: 16-DIP
Packaging: Bulk
Description: DECIMAL DECODER, LS SERIES
Part Status: Active
Supplier Device Package: 16-PDIP
Voltage Supply Source: Single Supply
Current - Output High, Low: 400µA, 8mA
Independent Circuits: 2
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -20°C ~ 75°C
Type: Decoder/Demultiplexer
Circuit: 2 x 2:4
Mounting Type: Through Hole
Package / Case: 16-DIP
Packaging: Bulk
Produkt ist nicht verfügbar
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| KSE13007H2SMTU |
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Hersteller: Fairchild Semiconductor
Description: POWER BIPOLAR TRANSISTOR NPN
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): 8A
Power - Max: 80W
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: POWER BIPOLAR TRANSISTOR NPN
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): 8A
Power - Max: 80W
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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| HUF75339G3_NL |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Produkt ist nicht verfügbar
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| HUF75343S3_NL |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 210+ | 2.65 EUR |
| HUF75332P3_NL |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 145W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 145W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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| 74F219SJ |
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Hersteller: Fairchild Semiconductor
Description: IC RAM 64BIT PARALLEL 16SOP
Memory Interface: Parallel
Write Cycle Time - Word, Page: 29ns
Part Status: Active
Supplier Device Package: 16-SOP
Memory Format: RAM
Technology: RAM
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 64bit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Bulk
DigiKey Programmable: Not Verified
Memory Organization: 16 x 4
Access Time: 27 ns
Description: IC RAM 64BIT PARALLEL 16SOP
Memory Interface: Parallel
Write Cycle Time - Word, Page: 29ns
Part Status: Active
Supplier Device Package: 16-SOP
Memory Format: RAM
Technology: RAM
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 64bit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Bulk
DigiKey Programmable: Not Verified
Memory Organization: 16 x 4
Access Time: 27 ns
auf Bestellung 323 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 158+ | 3.49 EUR |
| FM25C160UN |
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Hersteller: Fairchild Semiconductor
Description: IC EEPROM 16KBIT SPI 2.1MHZ 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2.1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT SPI 2.1MHZ 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2.1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1727 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 371+ | 1.49 EUR |
| FM25C160ULZEM8 |
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Hersteller: Fairchild Semiconductor
Description: IC EEPROM 16KBIT SPI 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 15ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT SPI 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 15ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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| CD4014BCM |
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Hersteller: Fairchild Semiconductor
Description: PARALLEL IN SERIAL OUT, 8-BIT,
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 15V
Supplier Device Package: 16-SOIC
Part Status: Active
Number of Bits per Element: 8
Description: PARALLEL IN SERIAL OUT, 8-BIT,
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 15V
Supplier Device Package: 16-SOIC
Part Status: Active
Number of Bits per Element: 8
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| FM25C160UVM8 |
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Hersteller: Fairchild Semiconductor
Description: IC EEPROM 16KBIT SPI 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2.1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT SPI 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2.1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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| FM25C160ULVM8 |
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Hersteller: Fairchild Semiconductor
Description: IC EEPROM 16KBIT SPI 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 15ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT SPI 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 15ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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| NM24C65UFM8 |
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Hersteller: Fairchild Semiconductor
Description: IC EEPROM 64KBIT I2C 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 8K x 8
Description: IC EEPROM 64KBIT I2C 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 8K x 8
Produkt ist nicht verfügbar
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| MPSA14D26Z |
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Hersteller: Fairchild Semiconductor
Description: TRANS NPN DARL 30V 1.2A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS NPN DARL 30V 1.2A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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| FM25C160ULM8 |
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Hersteller: Fairchild Semiconductor
Description: IC EEPROM 16KBIT SPI 1MHZ 8SOIC
Memory Interface: SPI
Write Cycle Time - Word, Page: 15ms
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
DigiKey Programmable: Not Verified
Memory Organization: 2K x 8
Description: IC EEPROM 16KBIT SPI 1MHZ 8SOIC
Memory Interface: SPI
Write Cycle Time - Word, Page: 15ms
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
DigiKey Programmable: Not Verified
Memory Organization: 2K x 8
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| NM93C46LM8 |
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Hersteller: Fairchild Semiconductor
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 250 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 15ms
Memory Interface: Microwire
Memory Organization: 64 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 250 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 15ms
Memory Interface: Microwire
Memory Organization: 64 x 16
DigiKey Programmable: Not Verified
auf Bestellung 36120 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 956+ | 0.56 EUR |
| NM25C160LZEM8 |
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Hersteller: Fairchild Semiconductor
Description: IC EEPROM 16KBIT SPI 1MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 2K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 15ms
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 2.7V ~ 4.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Description: IC EEPROM 16KBIT SPI 1MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 2K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 15ms
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 2.7V ~ 4.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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| NM25C160M8X |
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Hersteller: Fairchild Semiconductor
Description: IC EEPROM 16KBIT SPI 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2.1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT SPI 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2.1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 517 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 298+ | 1.84 EUR |
| 74LS74APC |
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Hersteller: Fairchild Semiconductor
Description: DUAL D-TYPE FLIP FLOP
Packaging: Bulk
Package / Case: 14-DIP
Output Type: Complementary
Mounting Type: Through Hole
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Current - Quiescent (Iq): 8 mA
Trigger Type: Positive Edge
Clock Frequency: 30 MHz
Supplier Device Package: 14-PDIP
Max Propagation Delay @ V, Max CL: 35ns @ 5V, 15pF
Part Status: Active
Number of Bits per Element: 1
Description: DUAL D-TYPE FLIP FLOP
Packaging: Bulk
Package / Case: 14-DIP
Output Type: Complementary
Mounting Type: Through Hole
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Current - Quiescent (Iq): 8 mA
Trigger Type: Positive Edge
Clock Frequency: 30 MHz
Supplier Device Package: 14-PDIP
Max Propagation Delay @ V, Max CL: 35ns @ 5V, 15pF
Part Status: Active
Number of Bits per Element: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NM93C56AN |
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Hersteller: Fairchild Semiconductor
Description: IC EEPROM 2KBIT MICROWIRE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 128 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT MICROWIRE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 128 x 16
DigiKey Programmable: Not Verified
auf Bestellung 3780 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 790+ | 0.69 EUR |
| SS9015DBU |
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Hersteller: Fairchild Semiconductor
Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 5V
Frequency - Transition: 190MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 5V
Frequency - Transition: 190MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
auf Bestellung 753175 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7869+ | 0.071 EUR |
| NM93C66MT8X |
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Hersteller: Fairchild Semiconductor
Description: IC EEPROM 4KBIT MICROWIRE 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT MICROWIRE 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 699+ | 0.79 EUR |
| NM93C66AN |
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Hersteller: Fairchild Semiconductor
Description: IC EEPROM 4KBIT MICROWIRE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 512 x 8, 256 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT MICROWIRE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 512 x 8, 256 x 16
DigiKey Programmable: Not Verified
auf Bestellung 1105 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 699+ | 0.79 EUR |
| SSF7N60B |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CD4010CMX |
Hersteller: Fairchild Semiconductor
Description: CMOS HEX 1-INPUT NON-INVERT GATE
Packaging: Bulk
Part Status: Active
Description: CMOS HEX 1-INPUT NON-INVERT GATE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SSI7N60BTU |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 964 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 519+ | 1.06 EUR |
| NM25C160EM8 |
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Hersteller: Fairchild Semiconductor
Description: IC EEPROM 16KBIT SPI 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2.1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT SPI 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2.1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 475 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 293+ | 1.87 EUR |
| SSR1N60BTF |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
auf Bestellung 76000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 790+ | 0.68 EUR |
| NM93C86ALZN |
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Hersteller: Fairchild Semiconductor
Description: IC EEPROM 16KBIT MICROWIRE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 1K x 16, 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT MICROWIRE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 1K x 16, 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1410 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 443+ | 1.25 EUR |
| FM25C160UM8 |
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Hersteller: Fairchild Semiconductor
Description: IC EEPROM 16KBIT SPI 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2.1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT SPI 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2.1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1567 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 371+ | 1.49 EUR |
| RCB004-12 |
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Hersteller: Fairchild Semiconductor
Description: DC-DC REGULATED POWER MODULE
Packaging: Bulk
Package / Case: 40-SMD Module
Voltage - Output: 1.3V ~ 3.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.75V ~ 5.25V, 11.4V ~ 12.6V
Operating Temperature: 0°C ~ 60°C (TA)
Applications: Converter, Intel Pentium® II
Description: DC-DC REGULATED POWER MODULE
Packaging: Bulk
Package / Case: 40-SMD Module
Voltage - Output: 1.3V ~ 3.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.75V ~ 5.25V, 11.4V ~ 12.6V
Operating Temperature: 0°C ~ 60°C (TA)
Applications: Converter, Intel Pentium® II
auf Bestellung 7085 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 38+ | 14.38 EUR |
| NM93C86ALN |
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Hersteller: Fairchild Semiconductor
Description: IC EEPROM 16KBIT MICROWIRE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 1K x 16, 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT MICROWIRE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 1K x 16, 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 23070 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 226+ | 2.44 EUR |
| SSR4N60BTM |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SSTV16857MTDX |
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Hersteller: Fairchild Semiconductor
Description: D FLIP-FLOP, SSTV SERIES, 14-BIT
Packaging: Bulk
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Number of Bits: 14
Logic Type: Registered Buffer with SSTL_2 Compatible I/O for DDR
Operating Temperature: 0°C ~ 70°C
Supply Voltage: 2.3V ~ 2.7V
Supplier Device Package: 48-TSSOP
Description: D FLIP-FLOP, SSTV SERIES, 14-BIT
Packaging: Bulk
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Number of Bits: 14
Logic Type: Registered Buffer with SSTL_2 Compatible I/O for DDR
Operating Temperature: 0°C ~ 70°C
Supply Voltage: 2.3V ~ 2.7V
Supplier Device Package: 48-TSSOP
auf Bestellung 17221 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 167+ | 3.45 EUR |
| SSP4N90A |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 2A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 2A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC161MTCX |
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Hersteller: Fairchild Semiconductor
Description: IC BINARY COUNTER 4-BIT 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-TSSOP
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
Count Rate: 40 MHz
Number of Bits per Element: 4
Description: IC BINARY COUNTER 4-BIT 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-TSSOP
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
Count Rate: 40 MHz
Number of Bits per Element: 4
auf Bestellung 19925 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 56.37 EUR |
| SSP1N60A |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
auf Bestellung 3893 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1817+ | 0.31 EUR |
| RFD14N05L_NL |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 5V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 5V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NM24C16LEN |
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Hersteller: Fairchild Semiconductor
Description: IC EEPROM 16KBIT I2C 100KHZ 8DIP
Memory Organization: 2K x 8
Access Time: 3.5 µs
Memory Interface: I2C
Write Cycle Time - Word, Page: 15ms
Part Status: Active
Supplier Device Package: 8-DIP
Memory Format: EEPROM
Clock Frequency: 100 kHz
Technology: EEPROM
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT I2C 100KHZ 8DIP
Memory Organization: 2K x 8
Access Time: 3.5 µs
Memory Interface: I2C
Write Cycle Time - Word, Page: 15ms
Part Status: Active
Supplier Device Package: 8-DIP
Memory Format: EEPROM
Clock Frequency: 100 kHz
Technology: EEPROM
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 815 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 343+ | 1.62 EUR |
| SSW7N60BTM |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 697 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 284+ | 1.94 EUR |
| MM74HC148N |
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Hersteller: Fairchild Semiconductor
Description: IC PRIORITY ENCODER 1X8:3 16PDIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 8:3
Type: Priority Encoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-PDIP
Part Status: Active
Description: IC PRIORITY ENCODER 1X8:3 16PDIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 8:3
Type: Priority Encoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-PDIP
Part Status: Active
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 135+ | 4 EUR |
| TL494CDX |
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Hersteller: Fairchild Semiconductor
Description: SWITCHING CONTROLLER
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 40kHz
Topology: Buck, Push-Pull
Voltage - Supply (Vcc/Vdd): 7V ~ 40V
Supplier Device Package: 16-SOIC
Synchronous Rectifier: Yes
Control Features: Dead Time Control, Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
Description: SWITCHING CONTROLLER
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 40kHz
Topology: Buck, Push-Pull
Voltage - Supply (Vcc/Vdd): 7V ~ 40V
Supplier Device Package: 16-SOIC
Synchronous Rectifier: Yes
Control Features: Dead Time Control, Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
auf Bestellung 6188 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1514+ | 0.36 EUR |
| RF1S50N06SM9A |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
auf Bestellung 7154 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 216+ | 2.55 EUR |
| SGH15N120RUFDTU |
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Hersteller: Fairchild Semiconductor
Description: IGBT 1200V 24A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 20ns/60ns
Test Condition: 600V, 15A, 20Ohm, 15V
Gate Charge: 108 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
Description: IGBT 1200V 24A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 20ns/60ns
Test Condition: 600V, 15A, 20Ohm, 15V
Gate Charge: 108 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
auf Bestellung 626 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 85+ | 6.52 EUR |
| SGL25N120RUFTU |
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Hersteller: Fairchild Semiconductor
Description: IGBT, 40A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Td (on/off) @ 25°C: 30ns/70ns
Switching Energy: 1.6mJ (on), 1.63mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 270 W
Description: IGBT, 40A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Td (on/off) @ 25°C: 30ns/70ns
Switching Energy: 1.6mJ (on), 1.63mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 270 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NM25C160M8 |
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Hersteller: Fairchild Semiconductor
Description: IC EEPROM 16KBIT SPI 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2.1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT SPI 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2.1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 298+ | 1.84 EUR |
| RFP50N06_NL |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HCT14MXNL |
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Hersteller: Fairchild Semiconductor
Description: IC XNOR 4-CIR 2-IN 14-SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: XNOR (Exclusive NOR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC XNOR 4-CIR 2-IN 14-SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: XNOR (Exclusive NOR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 72500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 865+ | 0.63 EUR |
| PN2222ARP |
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Hersteller: Fairchild Semiconductor
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-92-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-92-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RFD14N05SM9A_NL |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RFD14N05SM_NL |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SSF10N80A |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
auf Bestellung 1381 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 108+ | 4.96 EUR |
| SSI4N60BTU |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 3.13W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 3.13W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 50126 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 433+ | 1.23 EUR |
| SGH20N120RUFDTU |
![]() |
Hersteller: Fairchild Semiconductor
Description: IGBT, 32A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 30ns/70ns
Switching Energy: 1.3mJ (on), 1.3mJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 230 W
Description: IGBT, 32A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 30ns/70ns
Switching Energy: 1.3mJ (on), 1.3mJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 230 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SSR4N60BTF |
![]() |
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH





























