Produkte > FAIRCHILD SEMICONDUCTOR > Alle Produkte des Herstellers FAIRCHILD SEMICONDUCTOR (12411) > Seite 85 nach 207
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DM74LS257BMX | Fairchild Semiconductor |
Description: MULTIPLEXER, LS SERIES TTL Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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74FR1074PC | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: 14-DIP (0.300", 7.62mm) Output Type: Complementary Mounting Type: Through Hole Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 24 mA Current - Output High, Low: 24mA, 24mA Trigger Type: Negative Edge Clock Frequency: 160 MHz Supplier Device Package: 14-DIP Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Part Status: Active Number of Bits per Element: 1 |
auf Bestellung 3425 Stücke: Lieferzeit 10-14 Tag (e) |
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BC557CTA | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Part Status: Active Power - Max: 500 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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HGT1S7N60A4DS9A | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A Supplier Device Package: TO-263AB Td (on/off) @ 25°C: 11ns/100ns Switching Energy: 120µJ (on), 60µJ (off) Test Condition: 390V, 7A, 25Ohm, 15V Gate Charge: 60 nC Part Status: Active Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 125 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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FM93C86ACLM8 | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.7V ~ 5.5V Technology: EEPROM Clock Frequency: 250 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 15ms Memory Interface: Microwire Memory Organization: 1K x 16, 2K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1235 Stücke: Lieferzeit 10-14 Tag (e) |
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HGT1S12N60C3DS | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 32 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Supplier Device Package: TO-263AB Gate Charge: 71 nC Part Status: Active Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 104 W |
auf Bestellung 565 Stücke: Lieferzeit 10-14 Tag (e) |
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DM74LS279M | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Standard Mounting Type: Surface Mount Circuit: 1:1 Logic Type: S-R Latch Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Independent Circuits: 4 Current - Output High, Low: 8mA Delay Time - Propagation: 33ns Supplier Device Package: 16-SOIC Part Status: Active |
auf Bestellung 5932 Stücke: Lieferzeit 10-14 Tag (e) |
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DM74LS27MX | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Output High, Low: 400µA, 8mA Number of Inputs: 3 Supplier Device Package: 14-SOIC Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 18ns @ 5V, 50pF Part Status: Active Number of Circuits: 3 Current - Quiescent (Max): 6.8 mA |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DM74LS279MX | Fairchild Semiconductor |
Description: R-S LATCH, LOW LEVEL TRIGGERED Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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FM93C86AN | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-DIP Part Status: Active Write Cycle Time - Word, Page: 10ms Memory Interface: Microwire Memory Organization: 1K x 16, 2K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 2854 Stücke: Lieferzeit 10-14 Tag (e) |
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HGTD3N60A4S | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 6ns/73ns Test Condition: 390V, 3A, 50Ohm, 15V Gate Charge: 32 nC Part Status: Active Current - Collector (Ic) (Max): 17 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 70 W |
auf Bestellung 2005 Stücke: Lieferzeit 10-14 Tag (e) |
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DM74LS27M | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Output High, Low: 400µA, 8mA Number of Inputs: 3 Supplier Device Package: 14-SOIC Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 18ns @ 5V, 50pF Part Status: Active Number of Circuits: 3 Current - Quiescent (Max): 6.8 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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FM93C86ALM8X | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.7V ~ 5.5V Technology: EEPROM Clock Frequency: 250 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 15ms Memory Interface: Microwire Memory Organization: 1K x 16, 2K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
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HGTG20N60B3_NL | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: TO-247 Gate Charge: 135 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 165 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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HGTG30N60C3D_NL | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247 Gate Charge: 250 nC Part Status: Active Current - Collector (Ic) (Max): 63 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 252 A Power - Max: 208 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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ACE1502EM | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 2KB (2K x 8) RAM Size: 64 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: EEPROM EEPROM Size: 64 x 8 Core Processor: ACE1502 Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT Supplier Device Package: 14-SOIC Number of I/O: 8 DigiKey Programmable: Not Verified |
auf Bestellung 1320 Stücke: Lieferzeit 10-14 Tag (e) |
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HGTG30N60B3_NL | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-247 IGBT Type: NPT Td (on/off) @ 25°C: 36ns/137ns Switching Energy: 550µJ (on), 680µJ (off) Test Condition: 480V, 60A, 3Ohm, 15V Gate Charge: 250 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 220 A Power - Max: 208 W |
auf Bestellung 51 Stücke: Lieferzeit 10-14 Tag (e) |
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ACE1502EMT8 | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 2KB (2K x 8) RAM Size: 64 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: EEPROM EEPROM Size: 64 x 8 Core Processor: ACE1502 Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT Supplier Device Package: 8-TSSOP Number of I/O: 8 DigiKey Programmable: Not Verified |
auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
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FC940LVBX | Fairchild Semiconductor |
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auf Bestellung 13939 Stücke: Lieferzeit 10-14 Tag (e) |
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FMS7950KWC | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: 32-LQFP Mounting Type: Surface Mount Output: Clock Frequency - Max: 175MHz Type: Clock Multiplier, Clock Synthesizer Input: Crystal Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.1V ~ 3.5V Ratio - Input:Output: 1:9 Differential - Input:Output: No/No Supplier Device Package: 32-LQFP (7x7) PLL: Yes Divider/Multiplier: Yes/No Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
auf Bestellung 2202 Stücke: Lieferzeit 10-14 Tag (e) |
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DM74LS74ASJX | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.75V ~ 5.25V Current - Quiescent (Iq): 8 mA Current - Output High, Low: 400µA, 8mA Trigger Type: Positive Edge Clock Frequency: 20 MHz Supplier Device Package: 14-SOP Max Propagation Delay @ V, Max CL: 35ns @ 5V, 50pF Part Status: Active Number of Bits per Element: 1 |
auf Bestellung 13123 Stücke: Lieferzeit 10-14 Tag (e) |
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DM74LS74ASJ | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.75V ~ 5.25V Current - Quiescent (Iq): 8 mA Current - Output High, Low: 400µA, 8mA Trigger Type: Positive Edge Clock Frequency: 20 MHz Supplier Device Package: 14-SOP Max Propagation Delay @ V, Max CL: 35ns @ 5V, 50pF Part Status: Active Number of Bits per Element: 1 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF630A | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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HRF3205_NL | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 59A, 10V Power Dissipation (Max): 175W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V |
auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
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ACE1502VMT | Fairchild Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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IRF710B | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V |
auf Bestellung 31593 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF610A | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.65A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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IRF610B | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.65A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V |
auf Bestellung 3625 Stücke: Lieferzeit 10-14 Tag (e) |
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CD4070BCMX | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 15V Current - Output High, Low: 8.8mA, 8.8mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 3.5V ~ 11V Input Logic Level - Low: 1.5V ~ 4V Max Propagation Delay @ V, Max CL: 75ns @ 15V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
auf Bestellung 29001 Stücke: Lieferzeit 10-14 Tag (e) |
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FQB12N60TM | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V Power Dissipation (Max): 3.13W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
auf Bestellung 6990 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF830B | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.25A, 10V Power Dissipation (Max): 73W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
auf Bestellung 9803 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF730B | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.75A, 10V Power Dissipation (Max): 73W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
auf Bestellung 466249 Stücke: Lieferzeit 10-14 Tag (e) |
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FQB7N80TM | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.3A, 10V Power Dissipation (Max): 3.13W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
IRF9510R4941 | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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HGTP7N60A4_NL | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 11ns/100ns Switching Energy: 55µJ (on), 60µJ (off) Test Condition: 390V, 7A, 25Ohm, 15V Gate Charge: 37 nC Part Status: Active Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 125 W |
auf Bestellung 111 Stücke: Lieferzeit 10-14 Tag (e) |
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FQA9N90 | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.3A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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FQD3N60CTM | Fairchild Semiconductor |
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auf Bestellung 1475 Stücke: Lieferzeit 10-14 Tag (e) |
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FQB85N06TM | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 42.5A, 10V Power Dissipation (Max): 3.75W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V |
auf Bestellung 21566 Stücke: Lieferzeit 10-14 Tag (e) |
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HGTP5N120CN | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5.5A Supplier Device Package: TO-220AB IGBT Type: NPT Td (on/off) @ 25°C: 22ns/180ns Switching Energy: 400µJ (on), 640µJ (off) Test Condition: 960V, 5.5A, 25Ohm, 15V Gate Charge: 75 nC Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 40 A Power - Max: 167 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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FDD5N50FTM | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 1.75A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V |
auf Bestellung 1520 Stücke: Lieferzeit 10-14 Tag (e) |
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CD4081BCMX | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 15V Current - Output High, Low: 8.8mA, 8.8mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 3V ~ 9V Input Logic Level - Low: 1.5V ~ 4V Max Propagation Delay @ V, Max CL: 70ns @ 15V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
auf Bestellung 115645 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF820B | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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FDD6692 | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 14A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 15 V |
auf Bestellung 66982 Stücke: Lieferzeit 10-14 Tag (e) |
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FQP3N50C | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 25 V |
auf Bestellung 1362 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4730A_NL | Fairchild Semiconductor |
![]() Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 50 µA @ 1 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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FDD6690S | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4746A_NL | Fairchild Semiconductor |
![]() Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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1N4738A_NL | Fairchild Semiconductor |
![]() Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 4.5 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 6 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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1N4750A_NL | Fairchild Semiconductor |
![]() Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 35 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFM220BTF | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.13A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 570mA, 10V Power Dissipation (Max): 2.4W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V |
auf Bestellung 49910 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFI840BTU | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V Power Dissipation (Max): 3.13W (Ta), 134W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
auf Bestellung 51732 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFI630BTU | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V Power Dissipation (Max): 3.13W (Ta), 72W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V |
auf Bestellung 3453 Stücke: Lieferzeit 10-14 Tag (e) |
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FDZ7064S | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: 30-WFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 13.5A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 30-BGA (3.5x4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR214BTFFP001 | Fairchild Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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KA7805ATU | Fairchild Semiconductor |
Description: IC REG LINEAR FIXED STNDRD REG Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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IRFR210BTF | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.35A, 10V Power Dissipation (Max): 2.5W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V |
auf Bestellung 218000 Stücke: Lieferzeit 10-14 Tag (e) |
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FST16213MTDX | Fairchild Semiconductor |
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auf Bestellung 3747 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR210BTM | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.35A, 10V Power Dissipation (Max): 2.5W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V |
auf Bestellung 17300 Stücke: Lieferzeit 10-14 Tag (e) |
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KA5M0165RYDTU | Fairchild Semiconductor |
![]() Packaging: Bulk Features: Auto Restart Package / Case: TO-220-4 Full Pack, Formed Leads Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -25°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 8Ohm Input Type: Non-Inverting Voltage - Load: 30V Voltage - Supply (Vcc/Vdd): Not Required Ratio - Input:Output: 1:1 Supplier Device Package: TO-220F-4 Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO Part Status: Active |
auf Bestellung 6470 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5235BTA | Fairchild Semiconductor |
![]() Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 200°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 4.8 V |
auf Bestellung 24230 Stücke: Lieferzeit 10-14 Tag (e) |
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DM74LS257BMX |
Hersteller: Fairchild Semiconductor
Description: MULTIPLEXER, LS SERIES TTL
Packaging: Bulk
Part Status: Active
Description: MULTIPLEXER, LS SERIES TTL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74FR1074PC |
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Hersteller: Fairchild Semiconductor
Description: IC FF D-TYPE DOUBLE 1BIT 14-DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: Complementary
Mounting Type: Through Hole
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 24 mA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Negative Edge
Clock Frequency: 160 MHz
Supplier Device Package: 14-DIP
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE DOUBLE 1BIT 14-DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: Complementary
Mounting Type: Through Hole
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 24 mA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Negative Edge
Clock Frequency: 160 MHz
Supplier Device Package: 14-DIP
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
auf Bestellung 3425 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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607+ | 0.76 EUR |
BC557CTA |
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Hersteller: Fairchild Semiconductor
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 500 mW
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
HGT1S7N60A4DS9A |
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Hersteller: Fairchild Semiconductor
Description: IGBT, 34A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Supplier Device Package: TO-263AB
Td (on/off) @ 25°C: 11ns/100ns
Switching Energy: 120µJ (on), 60µJ (off)
Test Condition: 390V, 7A, 25Ohm, 15V
Gate Charge: 60 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 125 W
Description: IGBT, 34A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Supplier Device Package: TO-263AB
Td (on/off) @ 25°C: 11ns/100ns
Switching Energy: 120µJ (on), 60µJ (off)
Test Condition: 390V, 7A, 25Ohm, 15V
Gate Charge: 60 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 125 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FM93C86ACLM8 |
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Hersteller: Fairchild Semiconductor
Description: IC EEPROM 16KBIT MICROWIRE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 250 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 15ms
Memory Interface: Microwire
Memory Organization: 1K x 16, 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT MICROWIRE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 250 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 15ms
Memory Interface: Microwire
Memory Organization: 1K x 16, 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1235 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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607+ | 0.76 EUR |
HGT1S12N60C3DS |
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Hersteller: Fairchild Semiconductor
Description: IGBT 600V 24A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 32 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-263AB
Gate Charge: 71 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
Description: IGBT 600V 24A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 32 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-263AB
Gate Charge: 71 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
auf Bestellung 565 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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152+ | 3.06 EUR |
DM74LS279M |
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Hersteller: Fairchild Semiconductor
Description: R-S LATCH, LOW LEVEL TRIGGERED
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: S-R Latch
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Independent Circuits: 4
Current - Output High, Low: 8mA
Delay Time - Propagation: 33ns
Supplier Device Package: 16-SOIC
Part Status: Active
Description: R-S LATCH, LOW LEVEL TRIGGERED
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: S-R Latch
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Independent Circuits: 4
Current - Output High, Low: 8mA
Delay Time - Propagation: 33ns
Supplier Device Package: 16-SOIC
Part Status: Active
auf Bestellung 5932 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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1820+ | 0.26 EUR |
DM74LS27MX |
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Hersteller: Fairchild Semiconductor
Description: IC GATE NOR 3CH 3-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 18ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 6.8 mA
Description: IC GATE NOR 3CH 3-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 18ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 6.8 mA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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987+ | 0.50 EUR |
DM74LS279MX |
Hersteller: Fairchild Semiconductor
Description: R-S LATCH, LOW LEVEL TRIGGERED
Packaging: Bulk
Part Status: Active
Description: R-S LATCH, LOW LEVEL TRIGGERED
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FM93C86AN |
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Hersteller: Fairchild Semiconductor
Description: IC EEPROM 16KBIT MICROWIRE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 1K x 16, 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT MICROWIRE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 1K x 16, 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2854 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
283+ | 1.64 EUR |
HGTD3N60A4S |
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Hersteller: Fairchild Semiconductor
Description: IGBT 600V 17A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 6ns/73ns
Test Condition: 390V, 3A, 50Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 70 W
Description: IGBT 600V 17A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 6ns/73ns
Test Condition: 390V, 3A, 50Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 70 W
auf Bestellung 2005 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
497+ | 0.93 EUR |
DM74LS27M |
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Hersteller: Fairchild Semiconductor
Description: NOR GATE, LS SERIES TTL
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 18ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 6.8 mA
Description: NOR GATE, LS SERIES TTL
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 18ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 6.8 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FM93C86ALM8X |
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Hersteller: Fairchild Semiconductor
Description: IC EEPROM 16KBIT MICROWIRE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 250 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 15ms
Memory Interface: Microwire
Memory Organization: 1K x 16, 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT MICROWIRE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 250 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 15ms
Memory Interface: Microwire
Memory Organization: 1K x 16, 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
398+ | 1.18 EUR |
HGTG20N60B3_NL |
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Hersteller: Fairchild Semiconductor
Description: IGBT, 40A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247
Gate Charge: 135 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 165 W
Description: IGBT, 40A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247
Gate Charge: 135 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 165 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
HGTG30N60C3D_NL |
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Hersteller: Fairchild Semiconductor
Description: IGBT, 63A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
Description: IGBT, 63A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ACE1502EM |
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Hersteller: Fairchild Semiconductor
Description: 8-BIT, EEPROM, ACE1502 CPU
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 2KB (2K x 8)
RAM Size: 64 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: EEPROM
EEPROM Size: 64 x 8
Core Processor: ACE1502
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 14-SOIC
Number of I/O: 8
DigiKey Programmable: Not Verified
Description: 8-BIT, EEPROM, ACE1502 CPU
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 2KB (2K x 8)
RAM Size: 64 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: EEPROM
EEPROM Size: 64 x 8
Core Processor: ACE1502
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 14-SOIC
Number of I/O: 8
DigiKey Programmable: Not Verified
auf Bestellung 1320 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
381+ | 1.33 EUR |
HGTG30N60B3_NL |
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Hersteller: Fairchild Semiconductor
Description: IGBT NPT 600V 60A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/137ns
Switching Energy: 550µJ (on), 680µJ (off)
Test Condition: 480V, 60A, 3Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 208 W
Description: IGBT NPT 600V 60A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/137ns
Switching Energy: 550µJ (on), 680µJ (off)
Test Condition: 480V, 60A, 3Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 208 W
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
51+ | 8.84 EUR |
ACE1502EMT8 |
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Hersteller: Fairchild Semiconductor
Description: 8-BIT, EEPROM, ACE1502 CPU
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 2KB (2K x 8)
RAM Size: 64 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: EEPROM
EEPROM Size: 64 x 8
Core Processor: ACE1502
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 8-TSSOP
Number of I/O: 8
DigiKey Programmable: Not Verified
Description: 8-BIT, EEPROM, ACE1502 CPU
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 2KB (2K x 8)
RAM Size: 64 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: EEPROM
EEPROM Size: 64 x 8
Core Processor: ACE1502
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 8-TSSOP
Number of I/O: 8
DigiKey Programmable: Not Verified
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
226+ | 2.23 EUR |
FC940LVBX |
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Hersteller: Fairchild Semiconductor
Description: IC CLK BUFFER 2:18 150MHZ 32LQFP
Description: IC CLK BUFFER 2:18 150MHZ 32LQFP
auf Bestellung 13939 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
81+ | 5.97 EUR |
FMS7950KWC |
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Hersteller: Fairchild Semiconductor
Description: IC CLOCK MULT 32LQFP
Packaging: Bulk
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 175MHz
Type: Clock Multiplier, Clock Synthesizer
Input: Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.1V ~ 3.5V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 32-LQFP (7x7)
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK MULT 32LQFP
Packaging: Bulk
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 175MHz
Type: Clock Multiplier, Clock Synthesizer
Input: Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.1V ~ 3.5V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 32-LQFP (7x7)
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 2202 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
105+ | 4.85 EUR |
DM74LS74ASJX |
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Hersteller: Fairchild Semiconductor
Description: IC FF D-TYPE DOUBLE 1BIT 14-SOP
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Current - Quiescent (Iq): 8 mA
Current - Output High, Low: 400µA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 20 MHz
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 35ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE DOUBLE 1BIT 14-SOP
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Current - Quiescent (Iq): 8 mA
Current - Output High, Low: 400µA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 20 MHz
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 35ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
auf Bestellung 13123 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2427+ | 0.19 EUR |
DM74LS74ASJ |
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Hersteller: Fairchild Semiconductor
Description: IC FF D-TYPE DOUBLE 1BIT 14-SOP
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Current - Quiescent (Iq): 8 mA
Current - Output High, Low: 400µA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 20 MHz
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 35ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE DOUBLE 1BIT 14-SOP
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Current - Quiescent (Iq): 8 mA
Current - Output High, Low: 400µA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 20 MHz
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 35ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
993+ | 0.46 EUR |
IRF630A |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
HRF3205_NL |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 59A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 59A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 2.06 EUR |
ACE1502VMT |
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Hersteller: Fairchild Semiconductor
Description: 8-BIT, EEPROM PDSO14
Description: 8-BIT, EEPROM PDSO14
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF710B |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
auf Bestellung 31593 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1366+ | 0.34 EUR |
IRF610A |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.65A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.65A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF610B |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.65A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.65A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
auf Bestellung 3625 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
728+ | 0.63 EUR |
CD4070BCMX |
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Hersteller: Fairchild Semiconductor
Description: IC GATE XOR 4CH 2-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 15V
Current - Output High, Low: 8.8mA, 8.8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 75ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE XOR 4CH 2-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 15V
Current - Output High, Low: 8.8mA, 8.8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 75ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 29001 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
229+ | 2.03 EUR |
FQB12N60TM |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 6990 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
229+ | 2.03 EUR |
IRF830B |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
auf Bestellung 9803 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
420+ | 1.10 EUR |
IRF730B |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.75A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.75A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 466249 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
781+ | 0.59 EUR |
FQB7N80TM |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF9510R4941 |
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Hersteller: Fairchild Semiconductor
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
HGTP7N60A4_NL |
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Hersteller: Fairchild Semiconductor
Description: IGBT 600V 34A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 11ns/100ns
Switching Energy: 55µJ (on), 60µJ (off)
Test Condition: 390V, 7A, 25Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 125 W
Description: IGBT 600V 34A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 11ns/100ns
Switching Energy: 55µJ (on), 60µJ (off)
Test Condition: 390V, 7A, 25Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 125 W
auf Bestellung 111 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
111+ | 0.97 EUR |
FQA9N90 |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.3A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.3A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FQD3N60CTM |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
auf Bestellung 1475 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
962+ | 0.52 EUR |
FQB85N06TM |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 42.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 42.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V
auf Bestellung 21566 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
211+ | 2.39 EUR |
HGTP5N120CN |
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Hersteller: Fairchild Semiconductor
Description: IGBT, 25A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5.5A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/180ns
Switching Energy: 400µJ (on), 640µJ (off)
Test Condition: 960V, 5.5A, 25Ohm, 15V
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 167 W
Description: IGBT, 25A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5.5A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/180ns
Switching Energy: 400µJ (on), 640µJ (off)
Test Condition: 960V, 5.5A, 25Ohm, 15V
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 167 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDD5N50FTM |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 1.75A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 1.75A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
auf Bestellung 1520 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
398+ | 1.26 EUR |
CD4081BCMX |
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Hersteller: Fairchild Semiconductor
Description: IC GATE AND 4CH 2-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 15V
Current - Output High, Low: 8.8mA, 8.8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 3V ~ 9V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 70ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 4CH 2-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 15V
Current - Output High, Low: 8.8mA, 8.8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 3V ~ 9V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 70ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 115645 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
229+ | 2.13 EUR |
IRF820B |
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDD6692 |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 15 V
auf Bestellung 66982 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
412+ | 1.13 EUR |
FQP3N50C |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 25 V
auf Bestellung 1362 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
740+ | 0.67 EUR |
1N4730A_NL |
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Hersteller: Fairchild Semiconductor
Description: RECTIFIER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Description: RECTIFIER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDD6690S |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
358+ | 1.30 EUR |
1N4746A_NL |
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Hersteller: Fairchild Semiconductor
Description: RECTIFIER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Description: RECTIFIER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N4738A_NL |
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Hersteller: Fairchild Semiconductor
Description: RECTIFIER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Description: RECTIFIER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N4750A_NL |
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Hersteller: Fairchild Semiconductor
Description: DIODE ZENER 27V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
Description: DIODE ZENER 27V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6000+ | 0.10 EUR |
IRFM220BTF |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.13A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 570mA, 10V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.13A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 570mA, 10V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 49910 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
781+ | 0.62 EUR |
IRFI840BTU |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 3.13W (Ta), 134W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 3.13W (Ta), 134W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 51732 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
533+ | 0.87 EUR |
IRFI630BTU |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
auf Bestellung 3453 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
993+ | 0.49 EUR |
FDZ7064S |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 30-WFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 30-BGA (3.5x4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 30-WFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 30-BGA (3.5x4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
211+ | 2.28 EUR |
IRFR214BTFFP001 |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
KA7805ATU |
Hersteller: Fairchild Semiconductor
Description: IC REG LINEAR FIXED STNDRD REG
Packaging: Bulk
Part Status: Active
Description: IC REG LINEAR FIXED STNDRD REG
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFR210BTF |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
auf Bestellung 218000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1158+ | 0.44 EUR |
FST16213MTDX |
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Hersteller: Fairchild Semiconductor
Description: BUS EXCHANGER
Description: BUS EXCHANGER
auf Bestellung 3747 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
125+ | 3.86 EUR |
IRFR210BTM |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
auf Bestellung 17300 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1268+ | 0.40 EUR |
KA5M0165RYDTU |
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Hersteller: Fairchild Semiconductor
Description: IC REG LINEAR SWITCHING REG
Packaging: Bulk
Features: Auto Restart
Package / Case: TO-220-4 Full Pack, Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8Ohm
Input Type: Non-Inverting
Voltage - Load: 30V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220F-4
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
Part Status: Active
Description: IC REG LINEAR SWITCHING REG
Packaging: Bulk
Features: Auto Restart
Package / Case: TO-220-4 Full Pack, Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8Ohm
Input Type: Non-Inverting
Voltage - Load: 30V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220F-4
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
Part Status: Active
auf Bestellung 6470 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
229+ | 2.13 EUR |
1N5235BTA |
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Hersteller: Fairchild Semiconductor
Description: DIODE ZENER DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 200°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4.8 V
Description: DIODE ZENER DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 200°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4.8 V
auf Bestellung 24230 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5323+ | 0.10 EUR |