FGA120N30DTU Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: IGBT, 120A, 300V, N-CHANNEL
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 21 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 25A
Supplier Device Package: TO-3P
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 290 W
auf Bestellung 364 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 198+ | 3.95 EUR |
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Technische Details FGA120N30DTU Fairchild Semiconductor
Description: IGBT, 120A, 300V, N-CHANNEL, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 21 ns, Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 25A, Supplier Device Package: TO-3P, Gate Charge: 120 nC, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 290 W.
Weitere Produktangebote FGA120N30DTU
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FGA120N30DTU | Hersteller : onsemi |
Description: IGBT 300V 120A 290W TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 21 ns Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 25A Supplier Device Package: TO-3P Gate Charge: 120 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector Pulsed (Icm): 300 A Power - Max: 290 W |
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