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1064100G1 1064100G1 GE Aerospace 20kW-DC-to-DC-SiC-Converter-610Vdc-28Vdc.pdf Description: 20kW DC-DC Converter 610Vdc/28Vd
Packaging: Bulk
Power (Watts): 19992W
Size / Dimension: 16.00" L x 12.00" W x 3.50" H (406.4mm x 304.8mm x 88.9mm)
Mounting Type: Rack Mount
Type: Front End
Operating Temperature: -45°C ~ 70°C
Applications: ITE (Commercial)
Voltage - Input (Max): 725V
Current - Output (Max): 714A
Voltage - Input (Min): 475V
Voltage - Output 1: 28V
Part Status: Active
Number of Outputs: 1
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+231098.56 EUR
GE12047BCA3 GE12047BCA3 GE Aerospace 1200V-dual-silicon-carbide-power-module-GE12047BCA3.pdf Description: SIC 2N-CH 1200V 475A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 475A
Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
Produkt ist nicht verfügbar
GE12047CCA3 GE12047CCA3 GE Aerospace 1200V-half-bridge-silicon-carbide-power-module.pdf Description: SIC 2N-CH 1200V 475A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 475A
Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Supplier Device Package: Module
Part Status: Active
Produkt ist nicht verfügbar
GE12050EEA3 GE12050EEA3 GE Aerospace 1200v-475A-six-pack-three-phase-silicon-carbide-power-module-GE12050EEA3-rev1.1.pdf Description: SIC 6N-CH 1200V 475A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 475A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Supplier Device Package: Module
Part Status: Active
Produkt ist nicht verfügbar
GE12160CEA3 GE12160CEA3 GE Aerospace 1200v-1425A-half-bridge-silicon-carbide-power-module-GE12160CEA3-rev1.pdf Description: 1200V 1425A SiC Half-Bridge
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1.425kA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 90000pF @ 600V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 475A, 20V
Gate Charge (Qg) (Max) @ Vgs: 3744nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 480mA
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+5686.56 EUR
GE17042BCA3 GE17042BCA3 GE Aerospace 1700v-dual-silicon-carbide-power-module-GE17042BCA3.pdf Description: 1700V 425A SiC Dual Module
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+2221.12 EUR
GE17042CCA3 GE17042CCA3 GE Aerospace 1700v-half-bridge-silicon-carbide-power-module-GE17042CCA3.pdf Description: 1700V 425A SiC Half-Bridge
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+2221.12 EUR
GE17045EEA3 GE17045EEA3 GE Aerospace 1700v-450A-3PH-half-bridge-silicon-carbide-power-module-GE17045EEA3.pdf Description: 1700V 425A SiC Six-Pack Module
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
1+6661.6 EUR
GE17080CDA3 GE17080CDA3 GE Aerospace 1700v-800A-half-bridge-silicon-carbide-power-module-GE17080CDA3.pdf Description: 1700V 765A SIC HALF-BRIDGE MODUL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 2350W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 765A
Input Capacitance (Ciss) (Max) @ Vds: 58000pF @ 900V
Rds On (Max) @ Id, Vgs: 2.23mOhm @ 765A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2414nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+4440.48 EUR
GE17140CEA3 GE17140CEA3 GE Aerospace Silicon-Carbide-Power-Modules-2022.09.pdf Description: SIC 2N-CH 1700V 1.275KA MODUL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 1.275kA
Input Capacitance (Ciss) (Max) @ Vds: 82nF @ 600V
Gate Charge (Qg) (Max) @ Vgs: 3621nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 480mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+6151.32 EUR
1064100G1 20kW-DC-to-DC-SiC-Converter-610Vdc-28Vdc.pdf
1064100G1
Hersteller: GE Aerospace
Description: 20kW DC-DC Converter 610Vdc/28Vd
Packaging: Bulk
Power (Watts): 19992W
Size / Dimension: 16.00" L x 12.00" W x 3.50" H (406.4mm x 304.8mm x 88.9mm)
Mounting Type: Rack Mount
Type: Front End
Operating Temperature: -45°C ~ 70°C
Applications: ITE (Commercial)
Voltage - Input (Max): 725V
Current - Output (Max): 714A
Voltage - Input (Min): 475V
Voltage - Output 1: 28V
Part Status: Active
Number of Outputs: 1
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+231098.56 EUR
GE12047BCA3 1200V-dual-silicon-carbide-power-module-GE12047BCA3.pdf
GE12047BCA3
Hersteller: GE Aerospace
Description: SIC 2N-CH 1200V 475A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 475A
Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
Produkt ist nicht verfügbar
GE12047CCA3 1200V-half-bridge-silicon-carbide-power-module.pdf
GE12047CCA3
Hersteller: GE Aerospace
Description: SIC 2N-CH 1200V 475A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 475A
Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Supplier Device Package: Module
Part Status: Active
Produkt ist nicht verfügbar
GE12050EEA3 1200v-475A-six-pack-three-phase-silicon-carbide-power-module-GE12050EEA3-rev1.1.pdf
GE12050EEA3
Hersteller: GE Aerospace
Description: SIC 6N-CH 1200V 475A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 475A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Supplier Device Package: Module
Part Status: Active
Produkt ist nicht verfügbar
GE12160CEA3 1200v-1425A-half-bridge-silicon-carbide-power-module-GE12160CEA3-rev1.pdf
GE12160CEA3
Hersteller: GE Aerospace
Description: 1200V 1425A SiC Half-Bridge
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1.425kA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 90000pF @ 600V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 475A, 20V
Gate Charge (Qg) (Max) @ Vgs: 3744nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 480mA
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5686.56 EUR
GE17042BCA3 1700v-dual-silicon-carbide-power-module-GE17042BCA3.pdf
GE17042BCA3
Hersteller: GE Aerospace
Description: 1700V 425A SiC Dual Module
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2221.12 EUR
GE17042CCA3 1700v-half-bridge-silicon-carbide-power-module-GE17042CCA3.pdf
GE17042CCA3
Hersteller: GE Aerospace
Description: 1700V 425A SiC Half-Bridge
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2221.12 EUR
GE17045EEA3 1700v-450A-3PH-half-bridge-silicon-carbide-power-module-GE17045EEA3.pdf
GE17045EEA3
Hersteller: GE Aerospace
Description: 1700V 425A SiC Six-Pack Module
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6661.6 EUR
GE17080CDA3 1700v-800A-half-bridge-silicon-carbide-power-module-GE17080CDA3.pdf
GE17080CDA3
Hersteller: GE Aerospace
Description: 1700V 765A SIC HALF-BRIDGE MODUL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 2350W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 765A
Input Capacitance (Ciss) (Max) @ Vds: 58000pF @ 900V
Rds On (Max) @ Id, Vgs: 2.23mOhm @ 765A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2414nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4440.48 EUR
GE17140CEA3 Silicon-Carbide-Power-Modules-2022.09.pdf
GE17140CEA3
Hersteller: GE Aerospace
Description: SIC 2N-CH 1700V 1.275KA MODUL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 1.275kA
Input Capacitance (Ciss) (Max) @ Vds: 82nF @ 600V
Gate Charge (Qg) (Max) @ Vgs: 3621nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 480mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6151.32 EUR