Produkte > GE AEROSPACE > Alle Produkte des Herstellers GE AEROSPACE (10) > Seite 1 nach 1
Foto | Bezeichnung | Hersteller | Beschreibung |
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1064100G1 | GE Aerospace |
Description: 20kW DC-DC Converter 610Vdc/28Vd Packaging: Bulk Power (Watts): 19992W Size / Dimension: 16.00" L x 12.00" W x 3.50" H (406.4mm x 304.8mm x 88.9mm) Mounting Type: Rack Mount Type: Front End Operating Temperature: -45°C ~ 70°C Applications: ITE (Commercial) Voltage - Input (Max): 725V Current - Output (Max): 714A Voltage - Input (Min): 475V Voltage - Output 1: 28V Part Status: Active Number of Outputs: 1 |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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GE12047BCA3 | GE Aerospace |
Description: SIC 2N-CH 1200V 475A MODULE Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (Tc) Technology: Silicon Carbide (SiC) Power - Max: 1250W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 475A Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 4.5V @ 160mA Part Status: Active |
Produkt ist nicht verfügbar |
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GE12047CCA3 | GE Aerospace |
Description: SIC 2N-CH 1200V 475A MODULE Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (Tc) Technology: Silicon Carbide (SiC) Power - Max: 1250W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 475A Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 4.5V @ 160mA Supplier Device Package: Module Part Status: Active |
Produkt ist nicht verfügbar |
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GE12050EEA3 | GE Aerospace |
Description: SIC 6N-CH 1200V 475A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -55°C ~ 150°C (Tc) Technology: Silicon Carbide (SiC) Power - Max: 1250W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 475A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 4.5V @ 160mA Supplier Device Package: Module Part Status: Active |
Produkt ist nicht verfügbar |
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GE12160CEA3 | GE Aerospace |
Description: 1200V 1425A SiC Half-Bridge Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (Tc) Technology: Silicon Carbide (SiC) Power - Max: 3.75kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 1.425kA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 90000pF @ 600V Rds On (Max) @ Id, Vgs: 1.5mOhm @ 475A, 20V Gate Charge (Qg) (Max) @ Vgs: 3744nC @ 18V Vgs(th) (Max) @ Id: 4.5V @ 480mA Part Status: Active |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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GE17042BCA3 | GE Aerospace |
Description: 1700V 425A SiC Dual Module Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1250W Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 425A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V Vgs(th) (Max) @ Id: 4.5V @ 160mA Part Status: Active |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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GE17042CCA3 | GE Aerospace |
Description: 1700V 425A SiC Half-Bridge Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1250W Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 425A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V Vgs(th) (Max) @ Id: 4.5V @ 160mA Part Status: Active |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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GE17045EEA3 | GE Aerospace |
Description: 1700V 425A SiC Six-Pack Module Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -55°C ~ 150°C (Tc) Technology: Silicon Carbide (SiC) Power - Max: 1250W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 425A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V Vgs(th) (Max) @ Id: 4.5V @ 160mA Part Status: Active |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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GE17080CDA3 | GE Aerospace |
Description: 1700V 765A SIC HALF-BRIDGE MODUL Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (Tc) Technology: Silicon Carbide (SiC) Power - Max: 2350W Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 765A Input Capacitance (Ciss) (Max) @ Vds: 58000pF @ 900V Rds On (Max) @ Id, Vgs: 2.23mOhm @ 765A, 20V Gate Charge (Qg) (Max) @ Vgs: 2414nC @ 18V Vgs(th) (Max) @ Id: 4.5V @ 160mA Part Status: Active |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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GE17140CEA3 | GE Aerospace |
Description: SIC 2N-CH 1700V 1.275KA MODUL Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (Tc) Technology: Silicon Carbide (SiC) Power - Max: 3.75kW Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 1.275kA Input Capacitance (Ciss) (Max) @ Vds: 82nF @ 600V Gate Charge (Qg) (Max) @ Vgs: 3621nC @ 18V Vgs(th) (Max) @ Id: 4.5V @ 480mA Supplier Device Package: Module Part Status: Active |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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1064100G1 |
Hersteller: GE Aerospace
Description: 20kW DC-DC Converter 610Vdc/28Vd
Packaging: Bulk
Power (Watts): 19992W
Size / Dimension: 16.00" L x 12.00" W x 3.50" H (406.4mm x 304.8mm x 88.9mm)
Mounting Type: Rack Mount
Type: Front End
Operating Temperature: -45°C ~ 70°C
Applications: ITE (Commercial)
Voltage - Input (Max): 725V
Current - Output (Max): 714A
Voltage - Input (Min): 475V
Voltage - Output 1: 28V
Part Status: Active
Number of Outputs: 1
Description: 20kW DC-DC Converter 610Vdc/28Vd
Packaging: Bulk
Power (Watts): 19992W
Size / Dimension: 16.00" L x 12.00" W x 3.50" H (406.4mm x 304.8mm x 88.9mm)
Mounting Type: Rack Mount
Type: Front End
Operating Temperature: -45°C ~ 70°C
Applications: ITE (Commercial)
Voltage - Input (Max): 725V
Current - Output (Max): 714A
Voltage - Input (Min): 475V
Voltage - Output 1: 28V
Part Status: Active
Number of Outputs: 1
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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1+ | 231098.56 EUR |
GE12047BCA3 |
Hersteller: GE Aerospace
Description: SIC 2N-CH 1200V 475A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 475A
Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
Description: SIC 2N-CH 1200V 475A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 475A
Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
Produkt ist nicht verfügbar
GE12047CCA3 |
Hersteller: GE Aerospace
Description: SIC 2N-CH 1200V 475A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 475A
Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Supplier Device Package: Module
Part Status: Active
Description: SIC 2N-CH 1200V 475A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 475A
Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Supplier Device Package: Module
Part Status: Active
Produkt ist nicht verfügbar
GE12050EEA3 |
Hersteller: GE Aerospace
Description: SIC 6N-CH 1200V 475A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 475A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Supplier Device Package: Module
Part Status: Active
Description: SIC 6N-CH 1200V 475A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 475A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Supplier Device Package: Module
Part Status: Active
Produkt ist nicht verfügbar
GE12160CEA3 |
Hersteller: GE Aerospace
Description: 1200V 1425A SiC Half-Bridge
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1.425kA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 90000pF @ 600V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 475A, 20V
Gate Charge (Qg) (Max) @ Vgs: 3744nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 480mA
Part Status: Active
Description: 1200V 1425A SiC Half-Bridge
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1.425kA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 90000pF @ 600V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 475A, 20V
Gate Charge (Qg) (Max) @ Vgs: 3744nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 480mA
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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1+ | 5686.56 EUR |
GE17042BCA3 |
Hersteller: GE Aerospace
Description: 1700V 425A SiC Dual Module
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
Description: 1700V 425A SiC Dual Module
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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1+ | 2221.12 EUR |
GE17042CCA3 |
Hersteller: GE Aerospace
Description: 1700V 425A SiC Half-Bridge
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
Description: 1700V 425A SiC Half-Bridge
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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1+ | 2221.12 EUR |
GE17045EEA3 |
Hersteller: GE Aerospace
Description: 1700V 425A SiC Six-Pack Module
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
Description: 1700V 425A SiC Six-Pack Module
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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1+ | 6661.6 EUR |
GE17080CDA3 |
Hersteller: GE Aerospace
Description: 1700V 765A SIC HALF-BRIDGE MODUL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 2350W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 765A
Input Capacitance (Ciss) (Max) @ Vds: 58000pF @ 900V
Rds On (Max) @ Id, Vgs: 2.23mOhm @ 765A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2414nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
Description: 1700V 765A SIC HALF-BRIDGE MODUL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 2350W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 765A
Input Capacitance (Ciss) (Max) @ Vds: 58000pF @ 900V
Rds On (Max) @ Id, Vgs: 2.23mOhm @ 765A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2414nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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1+ | 4440.48 EUR |
GE17140CEA3 |
Hersteller: GE Aerospace
Description: SIC 2N-CH 1700V 1.275KA MODUL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 1.275kA
Input Capacitance (Ciss) (Max) @ Vds: 82nF @ 600V
Gate Charge (Qg) (Max) @ Vgs: 3621nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 480mA
Supplier Device Package: Module
Part Status: Active
Description: SIC 2N-CH 1700V 1.275KA MODUL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 1.275kA
Input Capacitance (Ciss) (Max) @ Vds: 82nF @ 600V
Gate Charge (Qg) (Max) @ Vgs: 3621nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 480mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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1+ | 6151.32 EUR |