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1064100G1 1064100G1 GE Aerospace 20kW-DC-to-DC-SiC-Converter-610Vdc-28Vdc.pdf Description: 20kW DC-DC Converter 610Vdc/28Vd
Packaging: Bulk
Part Status: Active
Voltage - Output 1: 28V
Voltage - Input (Min): 475V
Current - Output (Max): 714A
Voltage - Input (Max): 725V
Applications: ITE (Commercial)
Operating Temperature: -45°C ~ 70°C
Type: Front End
Mounting Type: Rack Mount
Size / Dimension: 16.00" L x 12.00" W x 3.50" H (406.4mm x 304.8mm x 88.9mm)
Number of Outputs: 1
Power (Watts): 19992W
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+275007.29 EUR
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GE12047BCA3 GE12047BCA3 GE Aerospace 1200V-dual-silicon-carbide-power-module-GE12047BCA3.pdf Description: SIC 2N-CH 1200V 475A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 475A
Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
Produkt ist nicht verfügbar
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GE12047CCA3 GE12047CCA3 GE Aerospace GE12047CCA3-1200V-475A-half-bridge-module-datasheet-rev1.5.pdf Description: SIC 2N-CH 1200V 475A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 475A
Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
1+2131.6 EUR
10+2008.05 EUR
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GE12050EEA3 GE12050EEA3 GE Aerospace 1200v-475A-six-pack-three-phase-silicon-carbide-power-module-GE12050EEA3-rev1.1.pdf Description: SIC 6N-CH 1200V 475A MODULE
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4.5V @ 160mA
FET Feature: Silicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V
Current - Continuous Drain (Id) @ 25°C: 475A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 1250W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -55°C ~ 150°C (Tc)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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GE1206003A1 GE1206003A1 GE Aerospace 1200v-SiC-MOSFET-GE1206003A1.pdf Description: SiC MOSFET N-Channel 1200V 60A
auf Bestellung 977 Stücke:
Lieferzeit 10-14 Tag (e)
2+20.19 EUR
Mindestbestellmenge: 2 Stücke
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GE12090CDA3 GE12090CDA3 GE Aerospace GE12090CDA3-1200V-875A-half-bridge-module-datasheet-rev1.2.pdf Description: MOSFET 2N-CH 1200V 875A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2350W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 875A
Input Capacitance (Ciss) (Max) @ Vds: 58.6nF @ 600V
Rds On (Max) @ Id, Vgs: 2.19mOhm @ 950A, 20V
Vgs(th) (Max) @ Id: 4.5V @ 320mA
Supplier Device Package: Module
Qualification: AEC-Q101
auf Bestellung 4 Stücke:
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1+7760.32 EUR
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GE12160CEA3 GE12160CEA3 GE Aerospace 1200v-1425A-half-bridge-silicon-carbide-power-module-GE12160CEA3-rev1.pdf Description: 1200V 1425A SiC Half-Bridge
Part Status: Active
Vgs(th) (Max) @ Id: 4.5V @ 480mA
Gate Charge (Qg) (Max) @ Vgs: 3744nC @ 18V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 475A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 90000pF @ 600V
Current - Continuous Drain (Id) @ 25°C: 1.425kA (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 3.75kW (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -55°C ~ 150°C (Tc)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 4 Stücke:
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1+6767.01 EUR
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GE17042BCA3 GE17042BCA3 GE Aerospace 1700v-dual-silicon-carbide-power-module-GE17042BCA3.pdf Description: 1700V 425A SiC Dual Module
Part Status: Active
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Power - Max: 1250W
Technology: Silicon Carbide (SiC)
Operating Temperature: 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 4 Stücke:
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1+2643.13 EUR
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GE17042CCA3 GE17042CCA3 GE Aerospace 1700v-half-bridge-silicon-carbide-power-module-GE17042CCA3.pdf Description: 1700V 425A SiC Half-Bridge
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Power - Max: 1250W
Technology: Silicon Carbide (SiC)
Operating Temperature: 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+2643.13 EUR
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GE17045EEA3 GE17045EEA3 GE Aerospace 1700v-450A-3PH-half-bridge-silicon-carbide-power-module-GE17045EEA3.pdf Description: 1700V 425A SiC Six-Pack Module
Part Status: Active
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Power - Max: 1250W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -55°C ~ 150°C (Tc)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
1+7927.3 EUR
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GE17080CDA3 GE17080CDA3 GE Aerospace 1700v-800A-half-bridge-silicon-carbide-power-module-GE17080CDA3.pdf Description: 1700V 765A SIC HALF-BRIDGE MODUL
Part Status: Active
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs: 2414nC @ 18V
Rds On (Max) @ Id, Vgs: 2.23mOhm @ 765A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 58000pF @ 900V
Current - Continuous Drain (Id) @ 25°C: 765A
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Power - Max: 2350W
Technology: Silicon Carbide (SiC)
Operating Temperature: -55°C ~ 150°C (Tc)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 5 Stücke:
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1+5284.17 EUR
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GE17140CEA3 GE17140CEA3 GE Aerospace GE17140CEA3-1700v-1275A-half-bridge-module-datasheet-rev1.1.pdf Description: SIC 2N-CH 1700V 1275A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 1.275kA
Input Capacitance (Ciss) (Max) @ Vds: 82nF @ 600V
Gate Charge (Qg) (Max) @ Vgs: 3621nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 480mA
Supplier Device Package: Module
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+18903.36 EUR
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1064100G1 20kW-DC-to-DC-SiC-Converter-610Vdc-28Vdc.pdf
1064100G1
Hersteller: GE Aerospace
Description: 20kW DC-DC Converter 610Vdc/28Vd
Packaging: Bulk
Part Status: Active
Voltage - Output 1: 28V
Voltage - Input (Min): 475V
Current - Output (Max): 714A
Voltage - Input (Max): 725V
Applications: ITE (Commercial)
Operating Temperature: -45°C ~ 70°C
Type: Front End
Mounting Type: Rack Mount
Size / Dimension: 16.00" L x 12.00" W x 3.50" H (406.4mm x 304.8mm x 88.9mm)
Number of Outputs: 1
Power (Watts): 19992W
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+275007.29 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GE12047BCA3 1200V-dual-silicon-carbide-power-module-GE12047BCA3.pdf
GE12047BCA3
Hersteller: GE Aerospace
Description: SIC 2N-CH 1200V 475A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 475A
Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
Produkt ist nicht verfügbar
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GE12047CCA3 GE12047CCA3-1200V-475A-half-bridge-module-datasheet-rev1.5.pdf
GE12047CCA3
Hersteller: GE Aerospace
Description: SIC 2N-CH 1200V 475A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 475A
Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+2131.6 EUR
10+2008.05 EUR
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GE12050EEA3 1200v-475A-six-pack-three-phase-silicon-carbide-power-module-GE12050EEA3-rev1.1.pdf
GE12050EEA3
Hersteller: GE Aerospace
Description: SIC 6N-CH 1200V 475A MODULE
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4.5V @ 160mA
FET Feature: Silicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V
Current - Continuous Drain (Id) @ 25°C: 475A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 1250W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -55°C ~ 150°C (Tc)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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GE1206003A1 1200v-SiC-MOSFET-GE1206003A1.pdf
GE1206003A1
Hersteller: GE Aerospace
Description: SiC MOSFET N-Channel 1200V 60A
auf Bestellung 977 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.19 EUR
Mindestbestellmenge: 2 Stücke
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GE12090CDA3 GE12090CDA3-1200V-875A-half-bridge-module-datasheet-rev1.2.pdf
GE12090CDA3
Hersteller: GE Aerospace
Description: MOSFET 2N-CH 1200V 875A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2350W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 875A
Input Capacitance (Ciss) (Max) @ Vds: 58.6nF @ 600V
Rds On (Max) @ Id, Vgs: 2.19mOhm @ 950A, 20V
Vgs(th) (Max) @ Id: 4.5V @ 320mA
Supplier Device Package: Module
Qualification: AEC-Q101
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+7760.32 EUR
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GE12160CEA3 1200v-1425A-half-bridge-silicon-carbide-power-module-GE12160CEA3-rev1.pdf
GE12160CEA3
Hersteller: GE Aerospace
Description: 1200V 1425A SiC Half-Bridge
Part Status: Active
Vgs(th) (Max) @ Id: 4.5V @ 480mA
Gate Charge (Qg) (Max) @ Vgs: 3744nC @ 18V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 475A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 90000pF @ 600V
Current - Continuous Drain (Id) @ 25°C: 1.425kA (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 3.75kW (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -55°C ~ 150°C (Tc)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+6767.01 EUR
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GE17042BCA3 1700v-dual-silicon-carbide-power-module-GE17042BCA3.pdf
GE17042BCA3
Hersteller: GE Aerospace
Description: 1700V 425A SiC Dual Module
Part Status: Active
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Power - Max: 1250W
Technology: Silicon Carbide (SiC)
Operating Temperature: 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+2643.13 EUR
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GE17042CCA3 1700v-half-bridge-silicon-carbide-power-module-GE17042CCA3.pdf
GE17042CCA3
Hersteller: GE Aerospace
Description: 1700V 425A SiC Half-Bridge
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Power - Max: 1250W
Technology: Silicon Carbide (SiC)
Operating Temperature: 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+2643.13 EUR
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GE17045EEA3 1700v-450A-3PH-half-bridge-silicon-carbide-power-module-GE17045EEA3.pdf
GE17045EEA3
Hersteller: GE Aerospace
Description: 1700V 425A SiC Six-Pack Module
Part Status: Active
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Power - Max: 1250W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -55°C ~ 150°C (Tc)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+7927.3 EUR
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GE17080CDA3 1700v-800A-half-bridge-silicon-carbide-power-module-GE17080CDA3.pdf
GE17080CDA3
Hersteller: GE Aerospace
Description: 1700V 765A SIC HALF-BRIDGE MODUL
Part Status: Active
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs: 2414nC @ 18V
Rds On (Max) @ Id, Vgs: 2.23mOhm @ 765A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 58000pF @ 900V
Current - Continuous Drain (Id) @ 25°C: 765A
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Power - Max: 2350W
Technology: Silicon Carbide (SiC)
Operating Temperature: -55°C ~ 150°C (Tc)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+5284.17 EUR
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GE17140CEA3 GE17140CEA3-1700v-1275A-half-bridge-module-datasheet-rev1.1.pdf
GE17140CEA3
Hersteller: GE Aerospace
Description: SIC 2N-CH 1700V 1275A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 1.275kA
Input Capacitance (Ciss) (Max) @ Vds: 82nF @ 600V
Gate Charge (Qg) (Max) @ Vgs: 3621nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 480mA
Supplier Device Package: Module
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+18903.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH