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NAC1081XTMA1 INFINEON TECHNOLOGIES Infineon-Infineon-NAC1080_NAC1081_DS_v01_03-EN-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c7d718a49017db42a43930b11 Category: Unclassified
Description: NAC1081XTMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+3.61 EUR
Mindestbestellmenge: 5000 Stücke
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IPP051N15N5XKSA1 IPP051N15N5XKSA1 INFINEON TECHNOLOGIES Infineon-IPP051N15N5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a0437e3754cb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 120A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 300W
Case: TO220-3
On-state resistance: 5.7mΩ
Mounting: THT
Gate charge: 80nC
Kind of channel: enhancement
auf Bestellung 33 Stücke:
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14+6.44 EUR
21+4.19 EUR
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IPP051N15N5AKSA1 INFINEON TECHNOLOGIES Infineon-IPP051N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a0437e3754cb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; Idm: 480A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 115A
Power dissipation: 300W
Case: PG-TO220-3
On-state resistance: 5.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™ 5
Pulsed drain current: 480A
Produkt ist nicht verfügbar
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IPW60R125P6XKSA1 IPW60R125P6XKSA1 INFINEON TECHNOLOGIES IPW60R125P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 187 Stücke:
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20+4.36 EUR
22+4 EUR
30+3.64 EUR
120+3.12 EUR
150+3.05 EUR
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IPW60R125CPFKSA1 IPW60R125CPFKSA1 INFINEON TECHNOLOGIES IPW60R125CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
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13+6.85 EUR
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IPW60R125C6FKSA1 IPW60R125C6FKSA1 INFINEON TECHNOLOGIES IPW60R125C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R125CFD7XKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R125CFD7-DS-v02_00-EN.pdf?fileId=5546d46261ff57770162002fa4562bb2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 92W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 92W
Case: TO247
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
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BSS205NH6327XTSA1 BSS205NH6327XTSA1 INFINEON TECHNOLOGIES BSS205NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
On-state resistance: 85mΩ
Technology: OptiMOS™ 2
Power dissipation: 0.5W
Drain current: 2.5A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 5277 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.46 EUR
220+0.39 EUR
253+0.33 EUR
374+0.23 EUR
443+0.19 EUR
633+0.13 EUR
1000+0.12 EUR
3000+0.1 EUR
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IPT012N08N5ATMA1 IPT012N08N5ATMA1 INFINEON TECHNOLOGIES IPT012N08N5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 279A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 279A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Pulsed drain current: 1.2kA
Power dissipation: 375W
Gate charge: 178nC
auf Bestellung 1987 Stücke:
Lieferzeit 14-21 Tag (e)
11+8.4 EUR
12+7.56 EUR
100+7 EUR
500+6.68 EUR
1000+6.01 EUR
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IRL40T209ATMA2 INFINEON TECHNOLOGIES Infineon-IRL40T209-DS-v01_00-EN.pdf?fileId=5546d46265413c11016542adc035132a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 586A; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 586A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUT260N10S5N019ATMA1 IAUT260N10S5N019ATMA1 INFINEON TECHNOLOGIES IAUT260N10S5N019.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Power dissipation: 300W
Gate charge: 54nC
Produkt ist nicht verfügbar
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IAUT240N08S5N019ATMA1 IAUT240N08S5N019ATMA1 INFINEON TECHNOLOGIES IAUT240N08S5N019.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 230W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Power dissipation: 230W
Gate charge: 42nC
Produkt ist nicht verfügbar
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IAUT300N10S5N015ATMA1 IAUT300N10S5N015ATMA1 INFINEON TECHNOLOGIES IAUT300N10S5N015.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8
Drain current: 300A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOF-8
On-state resistance: 1.5mΩ
Mounting: SMD
Power dissipation: 375W
Gate charge: 68nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUT150N10S5N035ATMA1 IAUT150N10S5N035ATMA1 INFINEON TECHNOLOGIES IAUT150N10S5N035.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Power dissipation: 166W
Gate charge: 30nC
Produkt ist nicht verfügbar
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BTH500151LUAAUMA1 INFINEON TECHNOLOGIES BTH500151LUAAUMA1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 32A; Ch: 1; N-Channel; SMD; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Technology: PROFET™
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 3.5mΩ
Supply voltage: 12...54V DC
Output current: 32A
Type of integrated circuit: power switch
Kind of output: N-Channel
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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IAUT165N08S5N029ATMA2 IAUT165N08S5N029ATMA2 INFINEON TECHNOLOGIES IAUT165N08S5N029.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 165A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Power dissipation: 167W
Gate charge: 31nC
Produkt ist nicht verfügbar
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IAUT200N08S5N023ATMA1 IAUT200N08S5N023ATMA1 INFINEON TECHNOLOGIES IAUT200N08S5N023.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOF-8
On-state resistance: 2.3mΩ
Mounting: SMD
Power dissipation: 200W
Gate charge: 36nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 200A
Produkt ist nicht verfügbar
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IAUT300N08S5N014ATMA1 IAUT300N08S5N014ATMA1 INFINEON TECHNOLOGIES IAUT300N08S5N014.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 300W; PG-HSOF-8
Drain current: 300A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOF-8
On-state resistance: 1.4mΩ
Mounting: SMD
Power dissipation: 300W
Gate charge: 60nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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IRF8788TRPBF IRF8788TRPBF INFINEON TECHNOLOGIES irf8788pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS50085-1TMB BTS50085-1TMB INFINEON TECHNOLOGIES BTS50085-1TMB.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-11
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
Produkt ist nicht verfügbar
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IRFB7440PBF IRFB7440PBF INFINEON TECHNOLOGIES IRFB7440PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 208A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 273 Stücke:
Lieferzeit 14-21 Tag (e)
41+2.11 EUR
57+1.51 EUR
77+1.11 EUR
88+0.98 EUR
Mindestbestellmenge: 41 Stücke
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FM1808B-SG FM1808B-SG INFINEON TECHNOLOGIES FM1808B-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 4.4÷5.5VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Interface: parallel 8bit
Kind of interface: parallel
Mounting: SMD
Case: SO28
Operating temperature: -40...85°C
Access time: 70ns
Supply voltage: 4.4...5.5V DC
Memory: 256kb FRAM
Memory organisation: 32kx8bit
Produkt ist nicht verfügbar
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IPD60N10S4L12ATMA1 IPD60N10S4L12ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60N10S4L_12-DS-v01_00-en.pdf?fileId=db3a3043372d5cc801374ffd51cd0505 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 94W; DPAK,TO252
Type of transistor: N-MOSFET
On-state resistance: 9.8mΩ
Mounting: SMD
Power dissipation: 94W
Gate charge: 49nC
Polarisation: unipolar
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 100V
Application: automotive industry
Case: DPAK; TO252
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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BSC098N10NS5ATMA1 BSC098N10NS5ATMA1 INFINEON TECHNOLOGIES BSC098N10NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB015N08N5ATMA1 IPB015N08N5ATMA1 INFINEON TECHNOLOGIES IPB015N08N5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
auf Bestellung 999 Stücke:
Lieferzeit 14-21 Tag (e)
13+6.79 EUR
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IPA90R340C3XKSA2 IPA90R340C3XKSA2 INFINEON TECHNOLOGIES Infineon-IPA90R340C3-DS-v01_00-en.pdf?fileId=db3a30431b3e89eb011b8cc90e320fa6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 900V; 15A; Idm: 15A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 900V
Drain current: 15A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 15A
Gate charge: 94nC
auf Bestellung 1150 Stücke:
Lieferzeit 14-21 Tag (e)
50+4.52 EUR
150+4.07 EUR
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BSP316PH6327XTSA1 BSP316PH6327XTSA1 INFINEON TECHNOLOGIES BSP316PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Mounting: SMD
Technology: SIPMOS™
Drain-source voltage: -100V
Drain current: -680mA
Power dissipation: 1.8W
On-state resistance: 1.8Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT223
Kind of channel: enhancement
auf Bestellung 679 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.83 EUR
145+0.58 EUR
167+0.51 EUR
176+0.49 EUR
179+0.48 EUR
250+0.45 EUR
500+0.39 EUR
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F3L300R07PE4 F3L300R07PE4 INFINEON TECHNOLOGIES F3L300R07PE4.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 300A; AG-ECONO4-1
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 300A
Case: AG-ECONO4-1
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
Power dissipation: 940W
Technology: EconoPACK™ 4
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
1+347.66 EUR
3+306.31 EUR
6+257.3 EUR
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CY7C1049GN30-10ZSXIT INFINEON TECHNOLOGIES Infineon-CY7C1049GN_4-Mbit_(512K_words_8_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed849f059c3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; TSOP44 II; parallel
Case: TSOP44 II
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 512kx8bit
Memory: 4Mb SRAM
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CY7C1049GN30-10ZSXI CY7C1049GN30-10ZSXI INFINEON TECHNOLOGIES Infineon-CY7C1049GN_4-Mbit_(512K_words_8_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed849f059c3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.2÷3.6V; 10ns; TSOP44 II
Case: TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Kind of memory: SRAM
Access time: 10ns
Operating voltage: 2.2...3.6V
Memory organisation: 512kx8bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
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CY7C1049G-10VXI INFINEON TECHNOLOGIES Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel; tube
Case: SOJ36
Mounting: SMD
Kind of package: tube
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 4.5...5.5V DC
Memory organisation: 512kx8bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
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CY7C1049GN30-10VXI INFINEON TECHNOLOGIES Infineon-CY7C1049GN_4-Mbit_(512K_words_8_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed849f059c3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel; tube
Case: SOJ36
Mounting: SMD
Kind of package: tube
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 512kx8bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
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CY7C1049G30-10VXI INFINEON TECHNOLOGIES Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel; tube
Case: SOJ36
Mounting: SMD
Kind of package: tube
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 512kx8bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
 Mindestbestellmenge: 19 Stücke
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CY7C1049G-10VXIT INFINEON TECHNOLOGIES Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel
Case: SOJ36
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 4.5...5.5V DC
Memory organisation: 512kx8bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
 Mindestbestellmenge: 500 Stücke
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CY7C1049G30-10VXIT INFINEON TECHNOLOGIES Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel
Case: SOJ36
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 512kx8bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
 Mindestbestellmenge: 500 Stücke
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CY7C1049G30-10ZSXI INFINEON TECHNOLOGIES Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; TSOP44 II; parallel
Case: TSOP44 II
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 512kx8bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
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CY7C1049G30-10ZSXIT INFINEON TECHNOLOGIES Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; TSOP44 II; parallel
Case: TSOP44 II
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 512kx8bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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CY7C1049GN-10VXI INFINEON TECHNOLOGIES Infineon-CY7C1049GN_4-Mbit_(512K_words_8_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed849f059c3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel; tube
Case: SOJ36
Mounting: SMD
Kind of package: tube
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 4.5...5.5V DC
Memory organisation: 512kx8bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
 Mindestbestellmenge: 570 Stücke
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CY7C1049GN-10VXIT INFINEON TECHNOLOGIES Infineon-CY7C1049GN_4-Mbit_(512K_words_8_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed849f059c3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel
Case: SOJ36
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 4.5...5.5V DC
Memory organisation: 512kx8bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
 Mindestbestellmenge: 500 Stücke
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BSC054N04NSGATMA1 BSC054N04NSGATMA1 INFINEON TECHNOLOGIES BSC054N04NSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 5.4mΩ
Power dissipation: 57W
Kind of channel: enhancement
Case: PG-TDSON-8
Gate-source voltage: ±20V
Drain current: 81A
Drain-source voltage: 40V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFL4315TRPBF IRFL4315TRPBF INFINEON TECHNOLOGIES irfl4315pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.8W; SOT223
Drain current: 2.6A
Power dissipation: 2.8W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Drain-source voltage: 150V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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IPW60R080P7 IPW60R080P7 INFINEON TECHNOLOGIES IPW60R080P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
On-state resistance: 80mΩ
Mounting: THT
Power dissipation: 129W
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 23A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62138EV30LL-45BVXIT INFINEON TECHNOLOGIES ?docID=45534 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; VFBGA36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: VFBGA36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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CY62138FV30LL-45ZAXAT INFINEON TECHNOLOGIES ?docID=49121 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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CY62138FV30LL-45ZAXIT INFINEON TECHNOLOGIES ?docID=49121 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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CY62138FLL-45SXI INFINEON TECHNOLOGIES Infineon-CY62138F_MOBL_2_MBIT_(256K_X_8)_STATIC_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9f27325d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 500 Stücke
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CY62138FLL-45SXIT INFINEON TECHNOLOGIES Infineon-CY62138F_MOBL_2_MBIT_(256K_X_8)_STATIC_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9f27325d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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CY62138FV30LL-45ZXI INFINEON TECHNOLOGIES Infineon-CY62138FV30_MoBL_2-Mbit_(256_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea2bb3263&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY62138EV30LL-45BVXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; VFBGA36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: VFBGA36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 960 Stücke
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CY62138FV30LL-45BVXI INFINEON TECHNOLOGIES Infineon-CY62138FV30_MoBL_2-Mbit_(256_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea2bb3263&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; VFBGA36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: VFBGA36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4800 Stücke
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CY62138FV30LL-45ZAXA INFINEON TECHNOLOGIES Infineon-CY62138FV30_MoBL_2-Mbit_(256_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea2bb3263&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2340 Stücke
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CY62138FV30LL-45ZAXI INFINEON TECHNOLOGIES Infineon-CY62138FV30_MoBL_2-Mbit_(256_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea2bb3263&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY62138FV30LL-45ZXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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TLE42502GHTSA1 TLE42502GHTSA1 INFINEON TECHNOLOGIES TLE4250-2G-DTE.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷36V; 0.05A
Kind of voltage regulator: adjustable; LDO; linear
Mounting: SMD
Case: PG-SCT595
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 50mA
Voltage drop: 0.3V
Number of channels: 1
Output voltage: 2.5...36V
Input voltage: 4...40V
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)
82+1.04 EUR
118+0.73 EUR
129+0.67 EUR
139+0.61 EUR
Mindestbestellmenge: 82 Stücke
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IGCM06F60GAXKMA1 IGCM06F60GAXKMA1 INFINEON TECHNOLOGIES IGCM06F60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -6÷6A
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -6...6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 23.6W
Produkt ist nicht verfügbar
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D711N65TXPSA1 INFINEON TECHNOLOGIES Infineon-D711N-DS-v8_1-en_de.pdf?fileId=db3a304412b407950112b42f99154c5f Category: Diodes - others
Description: Diode: hockey-puck rectifying
Type of diode: hockey-puck rectifying
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6 Stücke
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DD260N16K DD260N16K INFINEON TECHNOLOGIES DD260N18K.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 260A
Case: BG-PB50-1
Max. forward voltage: 1.32V
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRFB260NPBF IRFB260NPBF INFINEON TECHNOLOGIES irfb260n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 56A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUS260N10S5N019TATMA1 INFINEON TECHNOLOGIES Infineon-IAUS260N10S5N019T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e04616a61b8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W
Case: PG-HDSOP-16
Mounting: SMD
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 166nC
On-state resistance: 2.6mΩ
Drain current: 91A
Gate-source voltage: ±20V
Pulsed drain current: 995A
Power dissipation: 300W
Drain-source voltage: 100V
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1800 Stücke
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BFR182E6327HTSA1 INFINEON TECHNOLOGIES bfr182.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114268f4d130640 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 35mA; 250mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 35mA
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 8GHz
Current gain: 100
Application: automotive industry
Produkt ist nicht verfügbar
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NAC1081XTMA1 Infineon-Infineon-NAC1080_NAC1081_DS_v01_03-EN-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c7d718a49017db42a43930b11
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: NAC1081XTMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5000+3.61 EUR
Mindestbestellmenge: 5000 Stücke
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IPP051N15N5XKSA1 Infineon-IPP051N15N5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a0437e3754cb
IPP051N15N5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 120A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 300W
Case: TO220-3
On-state resistance: 5.7mΩ
Mounting: THT
Gate charge: 80nC
Kind of channel: enhancement
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
14+6.44 EUR
21+4.19 EUR
Mindestbestellmenge: 14 Stücke
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IPP051N15N5AKSA1 Infineon-IPP051N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a0437e3754cb
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; Idm: 480A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 115A
Power dissipation: 300W
Case: PG-TO220-3
On-state resistance: 5.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™ 5
Pulsed drain current: 480A
Produkt ist nicht verfügbar
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IPW60R125P6XKSA1 IPW60R125P6-DTE.pdf
IPW60R125P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
20+4.36 EUR
22+4 EUR
30+3.64 EUR
120+3.12 EUR
150+3.05 EUR
Mindestbestellmenge: 20 Stücke
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IPW60R125CPFKSA1 IPW60R125CP-DTE.pdf
IPW60R125CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
13+6.85 EUR
Mindestbestellmenge: 13 Stücke
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IPW60R125C6FKSA1 IPW60R125C6-DTE.pdf
IPW60R125C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R125CFD7XKSA1 Infineon-IPW60R125CFD7-DS-v02_00-EN.pdf?fileId=5546d46261ff57770162002fa4562bb2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 92W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 92W
Case: TO247
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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BSS205NH6327XTSA1 BSS205NH6327XTSA1.pdf
BSS205NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
On-state resistance: 85mΩ
Technology: OptiMOS™ 2
Power dissipation: 0.5W
Drain current: 2.5A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 5277 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
186+0.46 EUR
220+0.39 EUR
253+0.33 EUR
374+0.23 EUR
443+0.19 EUR
633+0.13 EUR
1000+0.12 EUR
3000+0.1 EUR
Mindestbestellmenge: 186 Stücke
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IPT012N08N5ATMA1 IPT012N08N5-DTE.pdf
IPT012N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 279A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 279A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Pulsed drain current: 1.2kA
Power dissipation: 375W
Gate charge: 178nC
auf Bestellung 1987 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
11+8.4 EUR
12+7.56 EUR
100+7 EUR
500+6.68 EUR
1000+6.01 EUR
Mindestbestellmenge: 11 Stücke
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IRL40T209ATMA2 Infineon-IRL40T209-DS-v01_00-EN.pdf?fileId=5546d46265413c11016542adc035132a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 586A; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 586A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUT260N10S5N019ATMA1 IAUT260N10S5N019.pdf
IAUT260N10S5N019ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Power dissipation: 300W
Gate charge: 54nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IAUT240N08S5N019ATMA1 IAUT240N08S5N019.pdf
IAUT240N08S5N019ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 230W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Power dissipation: 230W
Gate charge: 42nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IAUT300N10S5N015ATMA1 IAUT300N10S5N015.pdf
IAUT300N10S5N015ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8
Drain current: 300A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOF-8
On-state resistance: 1.5mΩ
Mounting: SMD
Power dissipation: 375W
Gate charge: 68nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IAUT150N10S5N035ATMA1 IAUT150N10S5N035.pdf
IAUT150N10S5N035ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Power dissipation: 166W
Gate charge: 30nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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BTH500151LUAAUMA1 BTH500151LUAAUMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 32A; Ch: 1; N-Channel; SMD; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Technology: PROFET™
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 3.5mΩ
Supply voltage: 12...54V DC
Output current: 32A
Type of integrated circuit: power switch
Kind of output: N-Channel
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IAUT165N08S5N029ATMA2 IAUT165N08S5N029.pdf
IAUT165N08S5N029ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 165A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Power dissipation: 167W
Gate charge: 31nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IAUT200N08S5N023ATMA1 IAUT200N08S5N023.pdf
IAUT200N08S5N023ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOF-8
On-state resistance: 2.3mΩ
Mounting: SMD
Power dissipation: 200W
Gate charge: 36nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 200A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IAUT300N08S5N014ATMA1 IAUT300N08S5N014.pdf
IAUT300N08S5N014ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 300W; PG-HSOF-8
Drain current: 300A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOF-8
On-state resistance: 1.4mΩ
Mounting: SMD
Power dissipation: 300W
Gate charge: 60nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IRF8788TRPBF irf8788pbf.pdf
IRF8788TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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BTS50085-1TMB BTS50085-1TMB.pdf
BTS50085-1TMB
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-11
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
Produkt ist nicht verfügbar
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IRFB7440PBF IRFB7440PBF.pdf
IRFB7440PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 208A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 273 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
41+2.11 EUR
57+1.51 EUR
77+1.11 EUR
88+0.98 EUR
Mindestbestellmenge: 41 Stücke
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FM1808B-SG FM1808B-DTE.pdf
FM1808B-SG
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 4.4÷5.5VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Interface: parallel 8bit
Kind of interface: parallel
Mounting: SMD
Case: SO28
Operating temperature: -40...85°C
Access time: 70ns
Supply voltage: 4.4...5.5V DC
Memory: 256kb FRAM
Memory organisation: 32kx8bit
Produkt ist nicht verfügbar
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IPD60N10S4L12ATMA1 Infineon-IPD60N10S4L_12-DS-v01_00-en.pdf?fileId=db3a3043372d5cc801374ffd51cd0505
IPD60N10S4L12ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 94W; DPAK,TO252
Type of transistor: N-MOSFET
On-state resistance: 9.8mΩ
Mounting: SMD
Power dissipation: 94W
Gate charge: 49nC
Polarisation: unipolar
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 100V
Application: automotive industry
Case: DPAK; TO252
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BSC098N10NS5ATMA1 BSC098N10NS5-DTE.pdf
BSC098N10NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPB015N08N5ATMA1 IPB015N08N5-DTE.pdf
IPB015N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
auf Bestellung 999 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
13+6.79 EUR
Mindestbestellmenge: 13 Stücke
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IPA90R340C3XKSA2 Infineon-IPA90R340C3-DS-v01_00-en.pdf?fileId=db3a30431b3e89eb011b8cc90e320fa6
IPA90R340C3XKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 900V; 15A; Idm: 15A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 900V
Drain current: 15A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 15A
Gate charge: 94nC
auf Bestellung 1150 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
50+4.52 EUR
150+4.07 EUR
Mindestbestellmenge: 50 Stücke
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BSP316PH6327XTSA1 BSP316PH6327XTSA1-dte.pdf
BSP316PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Mounting: SMD
Technology: SIPMOS™
Drain-source voltage: -100V
Drain current: -680mA
Power dissipation: 1.8W
On-state resistance: 1.8Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT223
Kind of channel: enhancement
auf Bestellung 679 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
103+0.83 EUR
145+0.58 EUR
167+0.51 EUR
176+0.49 EUR
179+0.48 EUR
250+0.45 EUR
500+0.39 EUR
Mindestbestellmenge: 103 Stücke
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F3L300R07PE4 F3L300R07PE4.pdf
F3L300R07PE4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 300A; AG-ECONO4-1
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 300A
Case: AG-ECONO4-1
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
Power dissipation: 940W
Technology: EconoPACK™ 4
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1+347.66 EUR
3+306.31 EUR
6+257.3 EUR
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CY7C1049GN30-10ZSXIT Infineon-CY7C1049GN_4-Mbit_(512K_words_8_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed849f059c3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; TSOP44 II; parallel
Case: TSOP44 II
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 512kx8bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CY7C1049GN30-10ZSXI Infineon-CY7C1049GN_4-Mbit_(512K_words_8_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed849f059c3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1049GN30-10ZSXI
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.2÷3.6V; 10ns; TSOP44 II
Case: TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Kind of memory: SRAM
Access time: 10ns
Operating voltage: 2.2...3.6V
Memory organisation: 512kx8bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
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CY7C1049G-10VXI Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel; tube
Case: SOJ36
Mounting: SMD
Kind of package: tube
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 4.5...5.5V DC
Memory organisation: 512kx8bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 19 Stücke
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CY7C1049GN30-10VXI Infineon-CY7C1049GN_4-Mbit_(512K_words_8_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed849f059c3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel; tube
Case: SOJ36
Mounting: SMD
Kind of package: tube
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 512kx8bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
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CY7C1049G30-10VXI Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel; tube
Case: SOJ36
Mounting: SMD
Kind of package: tube
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 512kx8bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 19 Stücke
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CY7C1049G-10VXIT Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel
Case: SOJ36
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 4.5...5.5V DC
Memory organisation: 512kx8bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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CY7C1049G30-10VXIT Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel
Case: SOJ36
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 512kx8bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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CY7C1049G30-10ZSXI Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; TSOP44 II; parallel
Case: TSOP44 II
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 512kx8bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
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CY7C1049G30-10ZSXIT Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; TSOP44 II; parallel
Case: TSOP44 II
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 512kx8bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CY7C1049GN-10VXI Infineon-CY7C1049GN_4-Mbit_(512K_words_8_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed849f059c3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel; tube
Case: SOJ36
Mounting: SMD
Kind of package: tube
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 4.5...5.5V DC
Memory organisation: 512kx8bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 570 Stücke
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CY7C1049GN-10VXIT Infineon-CY7C1049GN_4-Mbit_(512K_words_8_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed849f059c3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel
Case: SOJ36
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 4.5...5.5V DC
Memory organisation: 512kx8bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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BSC054N04NSGATMA1 BSC054N04NSG-DTE.pdf
BSC054N04NSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 5.4mΩ
Power dissipation: 57W
Kind of channel: enhancement
Case: PG-TDSON-8
Gate-source voltage: ±20V
Drain current: 81A
Drain-source voltage: 40V
Produkt ist nicht verfügbar
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IRFL4315TRPBF irfl4315pbf.pdf
IRFL4315TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.8W; SOT223
Drain current: 2.6A
Power dissipation: 2.8W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Drain-source voltage: 150V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPW60R080P7 IPW60R080P7.pdf
IPW60R080P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
On-state resistance: 80mΩ
Mounting: THT
Power dissipation: 129W
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 23A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
Produkt ist nicht verfügbar
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CY62138EV30LL-45BVXIT ?docID=45534
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; VFBGA36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: VFBGA36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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CY62138FV30LL-45ZAXAT ?docID=49121
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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CY62138FV30LL-45ZAXIT ?docID=49121
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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CY62138FLL-45SXI Infineon-CY62138F_MOBL_2_MBIT_(256K_X_8)_STATIC_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9f27325d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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CY62138FLL-45SXIT Infineon-CY62138F_MOBL_2_MBIT_(256K_X_8)_STATIC_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9f27325d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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CY62138FV30LL-45ZXI Infineon-CY62138FV30_MoBL_2-Mbit_(256_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea2bb3263&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1560 Stücke
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CY62138EV30LL-45BVXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; VFBGA36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: VFBGA36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 960 Stücke
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CY62138FV30LL-45BVXI Infineon-CY62138FV30_MoBL_2-Mbit_(256_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea2bb3263&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; VFBGA36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: VFBGA36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 4800 Stücke
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CY62138FV30LL-45ZAXA Infineon-CY62138FV30_MoBL_2-Mbit_(256_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea2bb3263&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2340 Stücke
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CY62138FV30LL-45ZAXI Infineon-CY62138FV30_MoBL_2-Mbit_(256_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea2bb3263&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY62138FV30LL-45ZXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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TLE42502GHTSA1 TLE4250-2G-DTE.pdf
TLE42502GHTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷36V; 0.05A
Kind of voltage regulator: adjustable; LDO; linear
Mounting: SMD
Case: PG-SCT595
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 50mA
Voltage drop: 0.3V
Number of channels: 1
Output voltage: 2.5...36V
Input voltage: 4...40V
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
82+1.04 EUR
118+0.73 EUR
129+0.67 EUR
139+0.61 EUR
Mindestbestellmenge: 82 Stücke
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IGCM06F60GAXKMA1 IGCM06F60GA.pdf
IGCM06F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -6÷6A
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -6...6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 23.6W
Produkt ist nicht verfügbar
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D711N65TXPSA1 Infineon-D711N-DS-v8_1-en_de.pdf?fileId=db3a304412b407950112b42f99154c5f
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: hockey-puck rectifying
Type of diode: hockey-puck rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
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DD260N16K DD260N18K.pdf
DD260N16K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 260A
Case: BG-PB50-1
Max. forward voltage: 1.32V
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRFB260NPBF irfb260n.pdf
IRFB260NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 56A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUS260N10S5N019TATMA1 Infineon-IAUS260N10S5N019T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e04616a61b8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W
Case: PG-HDSOP-16
Mounting: SMD
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 166nC
On-state resistance: 2.6mΩ
Drain current: 91A
Gate-source voltage: ±20V
Pulsed drain current: 995A
Power dissipation: 300W
Drain-source voltage: 100V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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BFR182E6327HTSA1 bfr182.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114268f4d130640
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 35mA; 250mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 35mA
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 8GHz
Current gain: 100
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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