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IPB160N04S4H1ATMA1 INFINEON TECHNOLOGIES Infineon-IPB160N04S4_H1-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c39839f5d47&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 167W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: TO263-7
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 137nC
Kind of channel: enhancement
Power dissipation: 167W
Drain current: 160A
Application: automotive industry
Produkt ist nicht verfügbar
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IPB160N04S4LH1ATMA1 INFINEON TECHNOLOGIES Infineon-IPB160N04S4LH110-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f0ac006489 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO263-7-3
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 640A
Power dissipation: 167W
Technology: OptiMOS™ T2
Drain current: 160A
Gate-source voltage: -16...20V
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IRS2304SPBF IRS2304SPBF INFINEON TECHNOLOGIES irs2304spbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Power: 625mW
Turn-off time: 185ns
auf Bestellung 65 Stücke:
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27+3.24 EUR
36+2.37 EUR
47+1.82 EUR
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BTS4141N BTS4141N INFINEON TECHNOLOGIES BTS4141N.pdf description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD
Technology: Classic PROFET
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
Mounting: SMD
Kind of output: N-Channel
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Output current: 0.7A
Output voltage: 12...45V
Number of channels: 1
auf Bestellung 2411 Stücke:
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19+4.68 EUR
28+3.12 EUR
100+2.45 EUR
250+2.19 EUR
500+2.01 EUR
1000+1.93 EUR
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BTS4880R BTS4880R INFINEON TECHNOLOGIES BTS4880R.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.625A; Ch: 1; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: BSSOP36
Kind of output: N-Channel
On-state resistance: 0.15Ω
Output current: 0.625A
Supply voltage: 11...45V DC
Technology: Classic PROFET
Kind of integrated circuit: high-side
auf Bestellung 755 Stücke:
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6+16.78 EUR
10+13.3 EUR
100+10.94 EUR
500+10.52 EUR
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BTS452T BTS452T INFINEON TECHNOLOGIES BTS452T.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5
Kind of output: N-Channel
Technology: Classic PROFET
Case: TO252-5
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 0.15Ω
Mounting: SMD
Supply voltage: 6...52V DC
Output current: 1.8A
Type of integrated circuit: power switch
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BTS4175SGA BTS4175SGA INFINEON TECHNOLOGIES BTS4175SGA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.175Ω
Mounting: SMD
Type of integrated circuit: power switch
Number of channels: 1
Output current: 1.3A
Supply voltage: 6...52V DC
Technology: Classic PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Produkt ist nicht verfügbar
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BTS436L2GATMA1 BTS436L2GATMA1 INFINEON TECHNOLOGIES Infineon-BTS436L2G-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9aff33e35e5 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK
On-state resistance: 35mΩ
Supply voltage: 4.7...41V DC
Technology: SIPMOS™
Operating temperature: -40...150°C
Power dissipation: 75W
Integrated circuit features: thermal protection
Application: automotive industry
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SPD06N80C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
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IRFR1205TRPBF IRFR1205TRPBF INFINEON TECHNOLOGIES irfr1205pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Drain current: 37A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Power dissipation: 107W
auf Bestellung 647 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.45 EUR
96+0.89 EUR
123+0.69 EUR
500+0.64 EUR
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BGS14MPA9E6327XTSA1 INFINEON TECHNOLOGIES BGS14MPA9E6327.pdf Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Type of integrated circuit: RF switch
Number of channels: 4
Mounting: SMD
Case: ATSLP-9-3
Supply voltage: 1.65...1.95V DC
Interface: MIPI
Bandwidth: 0.05...6GHz
Application: telecommunication
Output configuration: SP4T
Produkt ist nicht verfügbar
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IRS21867STRPBF IRS21867STRPBF INFINEON TECHNOLOGIES IRS21867SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Power: 625mW
Turn-off time: 188ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -4...4A
auf Bestellung 1290 Stücke:
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35+2.46 EUR
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IRS2186STRPBF IRS2186STRPBF INFINEON TECHNOLOGIES irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Power: 625mW
Turn-off time: 188ns
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35+2.49 EUR
47+1.83 EUR
50+1.7 EUR
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IRS2110SPBF IRS2110SPBF INFINEON TECHNOLOGIES irs2110.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Mounting: SMD
Supply voltage: 10...20V DC
Output current: -2...2A
Operating temperature: -40...125°C
Voltage class: 500V
Turn-on time: 155ns
Power: 1.25W
Kind of package: tube
Case: SO16
Turn-off time: 137ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
auf Bestellung 59 Stücke:
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18+4.94 EUR
23+3.76 EUR
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IRS21864SPBF IRS21864SPBF INFINEON TECHNOLOGIES irs2186pbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Type of integrated circuit: driver
Voltage class: 600V
Turn-on time: 192ns
Power: 1W
Kind of package: tube
Case: SO14
Turn-off time: 188ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
Mounting: SMD
Output current: -4...4A
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IRS2118PBF IRS2118PBF INFINEON TECHNOLOGIES irs2117pbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
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IRS2181STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V
Operating temperature: -40...125°C
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Case: SOIC8
Kind of integrated circuit: high-side; low-side
Number of channels: 2
Mounting: SMD
Input voltage: 10...20V
Output current: 1.9A
Produkt ist nicht verfügbar
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IRS2109STRPBF INFINEON TECHNOLOGIES IRSDS11365-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
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IRS21864STRPBF INFINEON TECHNOLOGIES infineon-2ed2182-4-s06f-j-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
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IRS21814STRPBF IRS21814STRPBF INFINEON TECHNOLOGIES infineon-2ed2101s06f-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Type of integrated circuit: driver
Voltage class: 600V
Turn-on time: 220ns
Power: 1W
Kind of package: reel; tape
Case: SO14
Turn-off time: 240ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Produkt ist nicht verfügbar
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IRS2101STRPBF INFINEON TECHNOLOGIES infineon-irs2101-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Mounting: SMD
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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IRS21271STRPBF IRS21271STRPBF INFINEON TECHNOLOGIES IRS212XXSTRPBf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current sensor; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 190ns
Produkt ist nicht verfügbar
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IRS2183STRPBF INFINEON TECHNOLOGIES irs2183.pdf?fileId=5546d462533600a401535676d20c27d8 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
auf Bestellung 2500 Stücke:
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2500+1.74 EUR
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IRF7205TRPBF IRF7205TRPBF INFINEON TECHNOLOGIES irf7205pbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 1715 Stücke:
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59+1.46 EUR
81+1.06 EUR
122+0.7 EUR
144+0.6 EUR
250+0.49 EUR
500+0.44 EUR
1000+0.39 EUR
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IRF7105TRPBF IRF7105TRPBF INFINEON TECHNOLOGIES irf7105pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 859 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.3 EUR
92+0.93 EUR
131+0.65 EUR
153+0.56 EUR
250+0.46 EUR
500+0.42 EUR
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IRF7101TRPBF IRF7101TRPBF INFINEON TECHNOLOGIES irf7101pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7104TRPBF IRF7104TRPBF INFINEON TECHNOLOGIES irf7104pbf.pdf description Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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BC858CE6327 BC858CE6327 INFINEON TECHNOLOGIES BC858CE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+8.51 EUR
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IR2109STRPBF IR2109STRPBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Power: 625mW
Turn-off time: 200ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -250...120mA
auf Bestellung 3579 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.77 EUR
52+1.65 EUR
59+1.45 EUR
65+1.31 EUR
73+1.18 EUR
74+1.15 EUR
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IR21094STRPBF IR21094STRPBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Power: 1W
Turn-off time: 200ns
auf Bestellung 1049 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.37 EUR
48+1.81 EUR
52+1.67 EUR
54+1.58 EUR
100+1.5 EUR
250+1.43 EUR
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IR21094SPBF IR21094SPBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Power: 1W
Turn-off time: 200ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+85.08 EUR
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IR21084STRPBF IR21084STRPBF INFINEON TECHNOLOGIES ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 350mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Input voltage: 10...20V
Output current: 0.35A
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Case: SOIC14
Kind of integrated circuit: high-side; low-side
Number of channels: 2
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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CY8C4245AXI-483 CY8C4245AXI-483 INFINEON TECHNOLOGIES CY8C4244LQI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY8C4125AXI-483 CY8C4125AXI-483 INFINEON TECHNOLOGIES CY8C4124AXI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
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CY8C27543-24AXI CY8C27543-24AXI INFINEON TECHNOLOGIES CY8C27x43_38-12012.pdf description Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 256BSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Clock frequency: 24MHz
Case: TQFP44
Memory: 256B SRAM; 16kB FLASH
Number of inputs/outputs: 40
Mounting: SMD
Supply voltage: 3...5.25V DC
Interface: I2C; SPI; UART
Kind of core: 8-bit
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CY8C4124AXI-443 CY8C4124AXI-443 INFINEON TECHNOLOGIES CY8C4124AXI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
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CY8C4125AXI-473 CY8C4125AXI-473 INFINEON TECHNOLOGIES CY8C4124AXI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
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CY8C4125AXQ-483 CY8C4125AXQ-483 INFINEON TECHNOLOGIES CY8C4124AXI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
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CY8C4245AXI-473 CY8C4245AXI-473 INFINEON TECHNOLOGIES CY8C4244LQI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY8C4245AZI-M443 CY8C4245AZI-M443 INFINEON TECHNOLOGIES CY8C4245AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 38
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IRF4104PBF IRF4104PBF INFINEON TECHNOLOGIES irf4104.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Technology: HEXFET®
Power dissipation: 140W
Gate charge: 68nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 5.5mΩ
Mounting: THT
auf Bestellung 75 Stücke:
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40+2.18 EUR
57+1.51 EUR
66+1.3 EUR
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IPP041N04NGXKSA1 IPP041N04NGXKSA1 INFINEON TECHNOLOGIES IPP041N04NG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 94W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
43+2.02 EUR
75+1.14 EUR
84+1.02 EUR
91+0.94 EUR
100+0.86 EUR
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IRF40H233XTMA1 INFINEON TECHNOLOGIES Infineon-IRF40H233-DS-v01_00-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF4104STRL AUIRF4104STRL INFINEON TECHNOLOGIES auirf4104.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: reel
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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BAS3007ARPPE6327HTSA1 BAS3007ARPPE6327HTSA1 INFINEON TECHNOLOGIES BAS3007ARPPE6327.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 30V
Load current: 0.9A
Max. forward impulse current: 5A
Case: SOT143
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: Schottky
auf Bestellung 347 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.82 EUR
125+0.68 EUR
140+0.61 EUR
199+0.43 EUR
Mindestbestellmenge: 105 Stücke
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BAS3005B02VH6327XTSA1 BAS3005B02VH6327XTSA1 INFINEON TECHNOLOGIES BAS3005B02VH6327XT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.5A
Mounting: SMD
Semiconductor structure: single diode
Case: SC79
Type of diode: Schottky switching
Max. forward impulse current: 5A
Max. forward voltage: 0.62V
Max. off-state voltage: 30V
Load current: 0.5A
auf Bestellung 1080 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.24 EUR
410+0.2 EUR
532+0.15 EUR
625+0.13 EUR
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S29AL008J70TFI010 S29AL008J70TFI010 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 8Mb FLASH
Kind of interface: parallel
Case: TSSOP48
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
auf Bestellung 1049 Stücke:
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20+4.36 EUR
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TT215N22KOF TT215N22KOF INFINEON TECHNOLOGIES TT215N22KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TLE8366EVXUMA1 INFINEON TECHNOLOGIES Infineon-TLE8366-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969d2def641fa Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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TT260N22KOFHOSA1 TT260N22KOFHOSA1 INFINEON TECHNOLOGIES TT260N22KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPD90N04S404ATMA1 IPD90N04S404ATMA1 INFINEON TECHNOLOGIES IPD90N04S404.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 81A
Pulsed drain current: 360A
Power dissipation: 71W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2239 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.87 EUR
59+1.46 EUR
67+1.27 EUR
74+1.15 EUR
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IPD90N04S4L04ATMA1 IPD90N04S4L04ATMA1 INFINEON TECHNOLOGIES Infineon-IPD90N04S4L_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291cab92685eaa&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 71W; DPAK,TO252
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 71W
Case: DPAK; TO252
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Polarisation: unipolar
Gate charge: 60nC
Produkt ist nicht verfügbar
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SPD50N03S207GBTMA1 SPD50N03S207GBTMA1 INFINEON TECHNOLOGIES SPD50N03S207G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Power dissipation: 136W
auf Bestellung 1328 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.83 EUR
106+0.8 EUR
112+0.76 EUR
116+0.74 EUR
500+0.7 EUR
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IPD050N03LGATMA1 IPD050N03LGATMA1 INFINEON TECHNOLOGIES IPD050N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Power dissipation: 68W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5mΩ
auf Bestellung 1173 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.83 EUR
96+0.89 EUR
127+0.68 EUR
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IPD50N03S4L06ATMA1 IPD50N03S4L06ATMA1 INFINEON TECHNOLOGIES INFNS15258-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 56W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: DPAK; TO252
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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BSC050N03LSGATMA1 BSC050N03LSGATMA1 INFINEON TECHNOLOGIES BSC050N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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BSZ050N03LSGATMA1 BSZ050N03LSGATMA1 INFINEON TECHNOLOGIES BSZ050N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP050N03LF2SAKSA1 IPP050N03LF2SAKSA1 INFINEON TECHNOLOGIES Infineon-IPP050N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fdfcd342466 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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BSC050N03MSGATMA1 BSC050N03MSGATMA1 INFINEON TECHNOLOGIES BSC050N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ050N03MSGATMA1 BSZ050N03MSGATMA1 INFINEON TECHNOLOGIES BSZ050N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB160N04S4H1ATMA1 Infineon-IPB160N04S4_H1-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c39839f5d47&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 167W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: TO263-7
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 137nC
Kind of channel: enhancement
Power dissipation: 167W
Drain current: 160A
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB160N04S4LH1ATMA1 Infineon-IPB160N04S4LH110-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f0ac006489
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO263-7-3
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 640A
Power dissipation: 167W
Technology: OptiMOS™ T2
Drain current: 160A
Gate-source voltage: -16...20V
Produkt ist nicht verfügbar
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IRS2304SPBF irs2304spbf.pdf
IRS2304SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Power: 625mW
Turn-off time: 185ns
auf Bestellung 65 Stücke:
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AnzahlPrivatkunde
27+3.24 EUR
36+2.37 EUR
47+1.82 EUR
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BTS4141N description BTS4141N.pdf
BTS4141N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD
Technology: Classic PROFET
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
Mounting: SMD
Kind of output: N-Channel
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Output current: 0.7A
Output voltage: 12...45V
Number of channels: 1
auf Bestellung 2411 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
19+4.68 EUR
28+3.12 EUR
100+2.45 EUR
250+2.19 EUR
500+2.01 EUR
1000+1.93 EUR
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BTS4880R BTS4880R.pdf
BTS4880R
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.625A; Ch: 1; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: BSSOP36
Kind of output: N-Channel
On-state resistance: 0.15Ω
Output current: 0.625A
Supply voltage: 11...45V DC
Technology: Classic PROFET
Kind of integrated circuit: high-side
auf Bestellung 755 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
6+16.78 EUR
10+13.3 EUR
100+10.94 EUR
500+10.52 EUR
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BTS452T BTS452T.pdf
BTS452T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5
Kind of output: N-Channel
Technology: Classic PROFET
Case: TO252-5
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 0.15Ω
Mounting: SMD
Supply voltage: 6...52V DC
Output current: 1.8A
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
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BTS4175SGA BTS4175SGA.pdf
BTS4175SGA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.175Ω
Mounting: SMD
Type of integrated circuit: power switch
Number of channels: 1
Output current: 1.3A
Supply voltage: 6...52V DC
Technology: Classic PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Produkt ist nicht verfügbar
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BTS436L2GATMA1 Infineon-BTS436L2G-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9aff33e35e5
BTS436L2GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK
On-state resistance: 35mΩ
Supply voltage: 4.7...41V DC
Technology: SIPMOS™
Operating temperature: -40...150°C
Power dissipation: 75W
Integrated circuit features: thermal protection
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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SPD06N80C3ATMA1 Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IRFR1205TRPBF irfr1205pbf.pdf
IRFR1205TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Drain current: 37A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Power dissipation: 107W
auf Bestellung 647 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
59+1.45 EUR
96+0.89 EUR
123+0.69 EUR
500+0.64 EUR
Mindestbestellmenge: 59 Stücke
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BGS14MPA9E6327XTSA1 BGS14MPA9E6327.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Type of integrated circuit: RF switch
Number of channels: 4
Mounting: SMD
Case: ATSLP-9-3
Supply voltage: 1.65...1.95V DC
Interface: MIPI
Bandwidth: 0.05...6GHz
Application: telecommunication
Output configuration: SP4T
Produkt ist nicht verfügbar
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IRS21867STRPBF IRS21867SPBF.pdf
IRS21867STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Power: 625mW
Turn-off time: 188ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -4...4A
auf Bestellung 1290 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
35+2.46 EUR
Mindestbestellmenge: 35 Stücke
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IRS2186STRPBF irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed
IRS2186STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Power: 625mW
Turn-off time: 188ns
auf Bestellung 1297 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
35+2.49 EUR
47+1.83 EUR
50+1.7 EUR
Mindestbestellmenge: 35 Stücke
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IRS2110SPBF description irs2110.pdf
IRS2110SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Mounting: SMD
Supply voltage: 10...20V DC
Output current: -2...2A
Operating temperature: -40...125°C
Voltage class: 500V
Turn-on time: 155ns
Power: 1.25W
Kind of package: tube
Case: SO16
Turn-off time: 137ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
18+4.94 EUR
23+3.76 EUR
Mindestbestellmenge: 18 Stücke
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IRS21864SPBF irs2186pbf.pdf
IRS21864SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Type of integrated circuit: driver
Voltage class: 600V
Turn-on time: 192ns
Power: 1W
Kind of package: tube
Case: SO14
Turn-off time: 188ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
Mounting: SMD
Output current: -4...4A
Produkt ist nicht verfügbar
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IRS2118PBF irs2117pbf.pdf
IRS2118PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
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IRS2181STRPBF INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V
Operating temperature: -40...125°C
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Case: SOIC8
Kind of integrated circuit: high-side; low-side
Number of channels: 2
Mounting: SMD
Input voltage: 10...20V
Output current: 1.9A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IRS2109STRPBF IRSDS11365-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IRS21864STRPBF infineon-2ed2182-4-s06f-j-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IRS21814STRPBF infineon-2ed2101s06f-datasheet-en.pdf
IRS21814STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Type of integrated circuit: driver
Voltage class: 600V
Turn-on time: 220ns
Power: 1W
Kind of package: reel; tape
Case: SO14
Turn-off time: 240ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IRS2101STRPBF infineon-irs2101-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Mounting: SMD
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IRS21271STRPBF IRS212XXSTRPBf.pdf
IRS21271STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current sensor; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 190ns
Produkt ist nicht verfügbar
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IRS2183STRPBF irs2183.pdf?fileId=5546d462533600a401535676d20c27d8
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2500+1.74 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7205TRPBF description irf7205pbf.pdf
IRF7205TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 1715 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
59+1.46 EUR
81+1.06 EUR
122+0.7 EUR
144+0.6 EUR
250+0.49 EUR
500+0.44 EUR
1000+0.39 EUR
Mindestbestellmenge: 59 Stücke
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IRF7105TRPBF description irf7105pbf.pdf
IRF7105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 859 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
66+1.3 EUR
92+0.93 EUR
131+0.65 EUR
153+0.56 EUR
250+0.46 EUR
500+0.42 EUR
Mindestbestellmenge: 66 Stücke
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IRF7101TRPBF irf7101pbf.pdf
IRF7101TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IRF7104TRPBF description irf7104pbf.pdf
IRF7104TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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BC858CE6327 BC858CE6327.pdf
BC858CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+8.51 EUR
Mindestbestellmenge: 10 Stücke
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IR2109STRPBF IR21094SPBF.pdf
IR2109STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Power: 625mW
Turn-off time: 200ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -250...120mA
auf Bestellung 3579 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
49+1.77 EUR
52+1.65 EUR
59+1.45 EUR
65+1.31 EUR
73+1.18 EUR
74+1.15 EUR
Mindestbestellmenge: 49 Stücke
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IR21094STRPBF IR21094SPBF.pdf
IR21094STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Power: 1W
Turn-off time: 200ns
auf Bestellung 1049 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
36+2.37 EUR
48+1.81 EUR
52+1.67 EUR
54+1.58 EUR
100+1.5 EUR
250+1.43 EUR
Mindestbestellmenge: 36 Stücke
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IR21094SPBF IR21094SPBF.pdf
IR21094SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Power: 1W
Turn-off time: 200ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1+85.08 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IR21084STRPBF ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
IR21084STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 350mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Input voltage: 10...20V
Output current: 0.35A
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Case: SOIC14
Kind of integrated circuit: high-side; low-side
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY8C4245AXI-483 CY8C4244LQI-443.pdf
CY8C4245AXI-483
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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CY8C4125AXI-483 CY8C4124AXI-443.pdf
CY8C4125AXI-483
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY8C27543-24AXI description CY8C27x43_38-12012.pdf
CY8C27543-24AXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 256BSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Clock frequency: 24MHz
Case: TQFP44
Memory: 256B SRAM; 16kB FLASH
Number of inputs/outputs: 40
Mounting: SMD
Supply voltage: 3...5.25V DC
Interface: I2C; SPI; UART
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 160 Stücke
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CY8C4124AXI-443 CY8C4124AXI-443.pdf
CY8C4124AXI-443
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 160 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4125AXI-473 CY8C4124AXI-443.pdf
CY8C4125AXI-473
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 320 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4125AXQ-483 CY8C4124AXI-443.pdf
CY8C4125AXQ-483
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 320 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4245AXI-473 CY8C4244LQI-443.pdf
CY8C4245AXI-473
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY8C4245AZI-M443 CY8C4245AZI-M443.pdf
CY8C4245AZI-M443
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 38
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IRF4104PBF description irf4104.pdf
IRF4104PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Technology: HEXFET®
Power dissipation: 140W
Gate charge: 68nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 5.5mΩ
Mounting: THT
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
40+2.18 EUR
57+1.51 EUR
66+1.3 EUR
Mindestbestellmenge: 40 Stücke
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IPP041N04NGXKSA1 IPP041N04NG-DTE.pdf
IPP041N04NGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 94W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
43+2.02 EUR
75+1.14 EUR
84+1.02 EUR
91+0.94 EUR
100+0.86 EUR
Mindestbestellmenge: 43 Stücke
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IRF40H233XTMA1 Infineon-IRF40H233-DS-v01_00-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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AUIRF4104STRL auirf4104.pdf
AUIRF4104STRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: reel
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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BAS3007ARPPE6327HTSA1 BAS3007ARPPE6327.pdf
BAS3007ARPPE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 30V
Load current: 0.9A
Max. forward impulse current: 5A
Case: SOT143
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: Schottky
auf Bestellung 347 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
105+0.82 EUR
125+0.68 EUR
140+0.61 EUR
199+0.43 EUR
Mindestbestellmenge: 105 Stücke
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BAS3005B02VH6327XTSA1 BAS3005B02VH6327XT.pdf
BAS3005B02VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.5A
Mounting: SMD
Semiconductor structure: single diode
Case: SC79
Type of diode: Schottky switching
Max. forward impulse current: 5A
Max. forward voltage: 0.62V
Max. off-state voltage: 30V
Load current: 0.5A
auf Bestellung 1080 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
358+0.24 EUR
410+0.2 EUR
532+0.15 EUR
625+0.13 EUR
Mindestbestellmenge: 358 Stücke
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S29AL008J70TFI010 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29AL008J70TFI010
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 8Mb FLASH
Kind of interface: parallel
Case: TSSOP48
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
auf Bestellung 1049 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
20+4.36 EUR
Mindestbestellmenge: 20 Stücke
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TT215N22KOF TT215N22KOF.pdf
TT215N22KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TLE8366EVXUMA1 Infineon-TLE8366-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969d2def641fa
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TT260N22KOFHOSA1 TT260N22KOF.pdf
TT260N22KOFHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPD90N04S404ATMA1 IPD90N04S404.pdf
IPD90N04S404ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 81A
Pulsed drain current: 360A
Power dissipation: 71W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2239 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
46+1.87 EUR
59+1.46 EUR
67+1.27 EUR
74+1.15 EUR
Mindestbestellmenge: 46 Stücke
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IPD90N04S4L04ATMA1 Infineon-IPD90N04S4L_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291cab92685eaa&ack=t
IPD90N04S4L04ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 71W; DPAK,TO252
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 71W
Case: DPAK; TO252
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Polarisation: unipolar
Gate charge: 60nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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SPD50N03S207GBTMA1 SPD50N03S207G-DTE.pdf
SPD50N03S207GBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Power dissipation: 136W
auf Bestellung 1328 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
103+0.83 EUR
106+0.8 EUR
112+0.76 EUR
116+0.74 EUR
500+0.7 EUR
Mindestbestellmenge: 103 Stücke
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IPD050N03LGATMA1 IPD050N03LG-DTE.pdf
IPD050N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Power dissipation: 68W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5mΩ
auf Bestellung 1173 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
47+1.83 EUR
96+0.89 EUR
127+0.68 EUR
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IPD50N03S4L06ATMA1 INFNS15258-1.pdf?t.download=true&u=5oefqw
IPD50N03S4L06ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 56W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: DPAK; TO252
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BSC050N03LSGATMA1 BSC050N03LSG-DTE.pdf
BSC050N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BSZ050N03LSGATMA1 BSZ050N03LSG-DTE.pdf
BSZ050N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP050N03LF2SAKSA1 Infineon-IPP050N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fdfcd342466
IPP050N03LF2SAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BSC050N03MSGATMA1 BSC050N03MSG-DTE.pdf
BSC050N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ050N03MSGATMA1 BSZ050N03MSG-DTE.pdf
BSZ050N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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