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KITXMCPLT2GOXMC4400TOBO1 INFINEON TECHNOLOGIES Infineon-XMC4400_Platform2Go-UserManual-v01_00-EN.pdf?fileId=5546d4626f229553016f8fc159482c94 Category: Development kits - Unclassified
Description: KITXMCPLT2GOXMC4400TOBO1
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IPW65R045C7FKSA1 IPW65R045C7FKSA1 INFINEON TECHNOLOGIES IPW65R045C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2010STRPBF IR2010STRPBF INFINEON TECHNOLOGIES IR2010SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Case: SO16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -3...3A
Turn-off time: 65ns
Turn-on time: 95ns
Kind of integrated circuit: gate driver; high-/low-side
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 200V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
auf Bestellung 924 Stücke:
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21+4.08 EUR
25+3.52 EUR
27+3.18 EUR
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IR2010SPBF IR2010SPBF INFINEON TECHNOLOGIES IR2010SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -3...3A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Produkt ist nicht verfügbar
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CY8C21334-24PVXI INFINEON TECHNOLOGIES Infineon-CY8C21634_CY8C21534_CY8C21434_CY8C21334_CY8C21234_PSoC_Programmable_System-on-Chip-DataSheet-v36_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd82ef47ed&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_a description Category: Infineon Technologies microcontrollers
Description: CY8C21334-24PVXI
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66+8.51 EUR
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IPF017N08NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPF017N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f40369135e8d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 259A; 250W; D2PAK-7
Mounting: SMD
Drain current: 259A
Case: D2PAK-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 124nC
On-state resistance: 1.7mΩ
Drain-source voltage: 80V
Power dissipation: 250W
Produkt ist nicht verfügbar
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IAUS300N08S5N012ATMA1 INFINEON TECHNOLOGIES IAUS300N08S5N012.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; Idm: 1.2kA; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB100N10S305ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I100N10S3-DS-v01_00-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908bd4d8595c&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 300W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Produkt ist nicht verfügbar
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IAUC100N10S5L040ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N10S5L040-DS-v01_00-EN.pdf?fileId=5546d462694c98b401696d0485683542 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 168W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 168W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUC100N10S5L054ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N10S5L054-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd429850211 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 400A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 400A
Power dissipation: 130W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUC100N10S5N040ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N10S5N040-DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164b70f994060e8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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SPP06N80C3 SPP06N80C3 INFINEON TECHNOLOGIES SPP06N80C3.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 74 Stücke:
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30+2.92 EUR
36+2.38 EUR
37+2.31 EUR
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SPA06N80C3 SPA06N80C3 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 39W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 52 Stücke:
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27+3.24 EUR
36+2.37 EUR
50+1.99 EUR
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BTS500251TEAAUMA1 INFINEON TECHNOLOGIES Infineon-BTS50025-1TEA-DS-V01_00-EN-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d4322f14b7d2a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 24A; Ch: 1; N-Channel; SMD; -40÷150°C
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 24A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 5mΩ
Supply voltage: 5.8...18V DC
Technology: High Current PROFET
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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FP10R12W1T7B11BOMA1 INFINEON TECHNOLOGIES FP10R12W1T7B11.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: AG-EASY1B-2
Gate-emitter voltage: ±20V
Collector current: 10A
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Pulsed collector current: 20A
Produkt ist nicht verfügbar
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CY8CMBR3110-SX2IT INFINEON TECHNOLOGIES Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Category: Drivers - integrated circuits
Description: CY8CMBR3110-SX2IT
auf Bestellung 5000 Stücke:
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2500+2.7 EUR
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CY8CMBR3110-SX2I INFINEON TECHNOLOGIES Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Category: Drivers - integrated circuits
Description: IC: driver/sensor; I2C; proximity detection; SOIC16
Case: SOIC16
Type of integrated circuit: driver/sensor
Interface: I2C
Integrated circuit features: proximity detection
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 1000 Stücke:
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48+3 EUR
240+2.7 EUR
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TLF80511TFV33ATMA2 INFINEON TECHNOLOGIES Infineon-TLF80511TF-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159fa3199ac3f4b Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 3.3V; 400mA; TO252-3; SMD; -40÷150°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 0.32V
Output voltage: 3.3V
Output current: 0.4A
Case: TO252-3
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Produkt ist nicht verfügbar
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IPB068N20NM6ATMA1 INFINEON TECHNOLOGIES IPB068N20NM6ATMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 134A; Idm: 536A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 134A
Pulsed drain current: 536A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC070N10NS5ATMA1 BSC070N10NS5ATMA1 INFINEON TECHNOLOGIES BSC070N10NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IPC70N04S5-4R6 IPC70N04S5-4R6 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Polarisation: unipolar
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Gate charge: 24.2nC
Mounting: SMD
On-state resistance: 4.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 50W
Drain current: 70A
Kind of channel: enhancement
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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IPC70N04S5L-4R2 IPC70N04S5L-4R2 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Polarisation: unipolar
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Gate charge: 30nC
Mounting: SMD
On-state resistance: 4.2mΩ
Gate-source voltage: ±16V
Drain-source voltage: 40V
Power dissipation: 50W
Drain current: 70A
Kind of channel: enhancement
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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S29CD016J0PQFM110 INFINEON TECHNOLOGIES Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel burst; 66MHz; PQFP80
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel burst
Operating voltage: 2.5...2.75V
Operating frequency: 66MHz
Case: PQFP80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 660 Stücke
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BTS721L1 BTS721L1 INFINEON TECHNOLOGIES BTS721L1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷6.3A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.9...6.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
On-state resistance: 25mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
Power dissipation: 3.7W
auf Bestellung 393 Stücke:
Lieferzeit 14-21 Tag (e)
10+8.64 EUR
12+7.21 EUR
25+6.91 EUR
50+6.89 EUR
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ITS428L2ATMA1 ITS428L2ATMA1 INFINEON TECHNOLOGIES ITS428L2.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252-5
Case: TO252-5
On-state resistance: 50mΩ
Mounting: SMD
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Number of channels: 1
Supply voltage: 4.75...43V DC
Output current: 5.8A
Technology: Industrial PROFET
auf Bestellung 687 Stücke:
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31+2.76 EUR
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BTS5210L BTS5210L INFINEON TECHNOLOGIES BTS5210L.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; BSOP12
Output current: 1.8A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: Classic PROFET
Case: BSOP12
Kind of integrated circuit: high-side
Number of channels: 2
On-state resistance: 0.11Ω
Mounting: SMD
Supply voltage: 5.5...40V DC
auf Bestellung 388 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.94 EUR
22+3.96 EUR
100+3.25 EUR
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BTS5016SDA BTS5016SDA INFINEON TECHNOLOGIES BTS5016SDA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 16mΩ
Technology: High Current PROFET
auf Bestellung 2480 Stücke:
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24+3.56 EUR
33+2.64 EUR
35+2.43 EUR
100+2.33 EUR
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BTS723GW BTS723GW INFINEON TECHNOLOGIES BTS723GW.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14
Output current: 2.9...4.2A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: Classic PROFET
Case: SO14
Kind of integrated circuit: high-side
Number of channels: 2
On-state resistance: 53mΩ
Mounting: SMD
Supply voltage: 7...58V DC
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
13+6.58 EUR
15+5.75 EUR
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ITS716G ITS716G INFINEON TECHNOLOGIES ITS716G.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 0.11Ω
Supply voltage: 5.5...40V DC
Technology: Industrial PROFET
auf Bestellung 791 Stücke:
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12+7.18 EUR
14+6.41 EUR
50+5.38 EUR
100+4.83 EUR
250+4.47 EUR
500+4.28 EUR
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BTS5210G BTS5210G INFINEON TECHNOLOGIES BTS5210G.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; SO14
Output current: 1.8A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: Classic PROFET
Case: SO14
Kind of integrated circuit: high-side
Number of channels: 2
On-state resistance: 0.11Ω
Mounting: SMD
Supply voltage: 5.5...40V DC
auf Bestellung 452 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.87 EUR
27+3.21 EUR
100+2.55 EUR
250+2.3 EUR
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ISP452 ISP452 INFINEON TECHNOLOGIES ISP452.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.16Ω
Supply voltage: 5...34V DC
Technology: Industrial PROFET
auf Bestellung 192 Stücke:
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34+2.55 EUR
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BSP762T BSP762T INFINEON TECHNOLOGIES BSP762T.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 70mΩ
Technology: Classic PROFET
Output voltage: 40V
auf Bestellung 512 Stücke:
Lieferzeit 14-21 Tag (e)
19+4.64 EUR
28+3.12 EUR
100+2.43 EUR
250+2.18 EUR
500+1.99 EUR
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BSP752TXUMA1 BSP752TXUMA1 INFINEON TECHNOLOGIES Infineon-BSP752T-DS-v01_01-EN.pdf?fileId=5546d46259d9a4bf015a8533f0fa778a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
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50+1.74 EUR
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1ED3321MC12NXUMA1 INFINEON TECHNOLOGIES infineon-1ed332xmc12n-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; EiceDRIVER™; SOIC16; Ch: 1
Supply voltage: 3.5...5.5V
Operating temperature: -40...125°C
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Kind of integrated circuit: gate driver; high-side
Integrated circuit features: MOSFET
Case: SOIC16
Impulse rise time: 15ns
Pulse fall time: 15ns
Turn-on time: 85ns
Power dissipation: 0.81W
Number of channels: 1
Insulation voltage: 5.7kV
Produkt ist nicht verfügbar
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IPP034NE7N3GXKSA1 IPP034NE7N3GXKSA1 INFINEON TECHNOLOGIES IPP034NE7N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 107 Stücke:
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18+4.91 EUR
19+4.52 EUR
22+3.89 EUR
25+3.52 EUR
50+3.2 EUR
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BSC090N03LSGATMA1 BSC090N03LSGATMA1 INFINEON TECHNOLOGIES BSC090N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BTS3118N BTS3118N INFINEON TECHNOLOGIES BTS3118N-DTE.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Mounting: SMD
Output current: 2.17A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: HITFET®
Output voltage: 42V
Case: SOT223-3
Kind of integrated circuit: low-side
Number of channels: 1
On-state resistance: 70mΩ
auf Bestellung 1732 Stücke:
Lieferzeit 14-21 Tag (e)
38+2.3 EUR
51+1.69 EUR
55+1.55 EUR
100+1.42 EUR
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IPB180P04P4L02ATMA2 INFINEON TECHNOLOGIES IPB180P04P4L02.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -140A; Idm: -720A; 150W
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -140A
Pulsed drain current: -720A
Power dissipation: 150W
Case: PG-TO263-7
Gate-source voltage: -16...5V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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IPB180N04S401ATMA1 INFINEON TECHNOLOGIES Infineon-IPB180N04S4_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c432c5d5d67&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 188W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 188W
Case: TO263-7
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 176nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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IPB180N04S401ATMA1 INFINEON TECHNOLOGIES Infineon-IPB180N04S4_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c432c5d5d67&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
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1000+1.55 EUR
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IPB180N04S4L01ATMA1 INFINEON TECHNOLOGIES Infineon-IPB180N04S4L0110-DS-v01_00-en.pdf?fileId=5546d461464245d3014670ea376d6469 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 180A; 188W; TO263-7
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 188W
Case: TO263-7
Gate-source voltage: -16...20V
Mounting: SMD
Gate charge: 245nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+3.59 EUR
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BSC220N20NSFDATMA1 INFINEON TECHNOLOGIES BSC220N20NSFD_Rev2.0_2018-03-14.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 52A; 214W; TSON8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 52A
Power dissipation: 214W
Case: TSON8
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 43nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IPDQ60R007CM8XTMA1 INFINEON TECHNOLOGIES Infineon-IPDQ60R007CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d8dd992bf0724 Category: Transistors - Unclassified
Description: IPDQ60R007CM8XTMA1
auf Bestellung 750 Stücke:
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750+28.2 EUR
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CY14V101NA-BA25XIT INFINEON TECHNOLOGIES ?docID=45099 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 25ns; FBGA48; parallel
Mounting: SMD
Type of integrated circuit: SRAM memory
Case: FBGA48
Kind of memory: NV SRAM
Kind of interface: parallel
Kind of package: reel; tape
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 1.65...1.95V DC; 3...3.6V DC
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Produkt ist nicht verfügbar
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S25FS128SDSBHB203 INFINEON TECHNOLOGIES Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Application: automotive
Case: BGA24
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of memory: NOR
Kind of interface: serial
Operating temperature: -40...105°C
Operating voltage: 1.7...2V
Operating frequency: 133MHz
Memory: 128Mb FLASH
Interface: QUAD SPI
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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IPB123N10N3GATMA1 IPB123N10N3GATMA1 INFINEON TECHNOLOGIES IPB123N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Power dissipation: 94W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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FM16W08-SGTR FM16W08-SGTR INFINEON TECHNOLOGIES FM16W08-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; parallel 8bit; 8kx8bit; 2.7÷5.5VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: parallel 8bit
Memory organisation: 8kx8bit
Supply voltage: 2.7...5.5V DC
Access time: 70ns
Case: SO28
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
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 Mindestbestellmenge: 1000 Stücke
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BCR112 INFINEON TECHNOLOGIES bcr112series.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Kind of transistor: BRT
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BCR112WH6327XTSA1 INFINEON TECHNOLOGIES bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; 250mW; SC70,SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 20
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 30000 Stücke:
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12000+0.062 EUR
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AUIR3241STR AUIR3241STR INFINEON TECHNOLOGIES AUIR3241STR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 625mW; Ch: 1; 40V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Power: 625mW
Number of channels: 1
Supply voltage: 3...36V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 40V
Produkt ist nicht verfügbar
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IPD90P04P4L04ATMA2 INFINEON TECHNOLOGIES Infineon-IPD90P04P4L-04-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f7829059b2dee Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -90A; 125W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -90A
Power dissipation: 125W
Case: DPAK; TO252
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 135nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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BTS117BKSA1 BTS117BKSA1 INFINEON TECHNOLOGIES Infineon-BTS117-DS-v01_04-EN.pdf?fileId=5546d4625a888733015aa350a0970fbc Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; THT; TO220-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: TO220-3
On-state resistance: 0.1Ω
Kind of package: tube
Technology: SIPMOS™
Produkt ist nicht verfügbar
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NAC1081XTMA1 INFINEON TECHNOLOGIES Infineon-Infineon-NAC1080_NAC1081_DS_v01_03-EN-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c7d718a49017db42a43930b11 Category: Unclassified
Description: NAC1081XTMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+3.61 EUR
Mindestbestellmenge: 5000 Stücke
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IPP051N15N5XKSA1 IPP051N15N5XKSA1 INFINEON TECHNOLOGIES Infineon-IPP051N15N5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a0437e3754cb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 120A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 300W
Case: TO220-3
On-state resistance: 5.7mΩ
Mounting: THT
Gate charge: 80nC
Kind of channel: enhancement
auf Bestellung 33 Stücke:
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14+6.44 EUR
21+4.19 EUR
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IPP051N15N5AKSA1 INFINEON TECHNOLOGIES Infineon-IPP051N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a0437e3754cb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; Idm: 480A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 115A
Power dissipation: 300W
Case: PG-TO220-3
On-state resistance: 5.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™ 5
Pulsed drain current: 480A
Produkt ist nicht verfügbar
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IPW60R125P6XKSA1 IPW60R125P6XKSA1 INFINEON TECHNOLOGIES IPW60R125P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)
20+4.36 EUR
22+4 EUR
30+3.64 EUR
120+3.12 EUR
150+3.05 EUR
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IPW60R125CPFKSA1 IPW60R125CPFKSA1 INFINEON TECHNOLOGIES IPW60R125CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
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13+6.85 EUR
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IPW60R125C6FKSA1 IPW60R125C6FKSA1 INFINEON TECHNOLOGIES IPW60R125C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R125CFD7XKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R125CFD7-DS-v02_00-EN.pdf?fileId=5546d46261ff57770162002fa4562bb2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 92W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 92W
Case: TO247
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 240 Stücke
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BSS205NH6327XTSA1 BSS205NH6327XTSA1 INFINEON TECHNOLOGIES BSS205NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
On-state resistance: 85mΩ
Technology: OptiMOS™ 2
Power dissipation: 0.5W
Drain current: 2.5A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 5277 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.46 EUR
220+0.39 EUR
253+0.33 EUR
374+0.23 EUR
443+0.19 EUR
633+0.13 EUR
1000+0.12 EUR
3000+0.1 EUR
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KITXMCPLT2GOXMC4400TOBO1 Infineon-XMC4400_Platform2Go-UserManual-v01_00-EN.pdf?fileId=5546d4626f229553016f8fc159482c94
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - Unclassified
Description: KITXMCPLT2GOXMC4400TOBO1
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AnzahlPrivatkunde
6+133.13 EUR
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IPW65R045C7FKSA1 IPW65R045C7-DTE.pdf
IPW65R045C7FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2010STRPBF IR2010SPBF.pdf
IR2010STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Case: SO16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -3...3A
Turn-off time: 65ns
Turn-on time: 95ns
Kind of integrated circuit: gate driver; high-/low-side
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 200V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
auf Bestellung 924 Stücke:
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AnzahlPrivatkunde
21+4.08 EUR
25+3.52 EUR
27+3.18 EUR
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IR2010SPBF IR2010SPBF.pdf
IR2010SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -3...3A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Produkt ist nicht verfügbar
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CY8C21334-24PVXI description Infineon-CY8C21634_CY8C21534_CY8C21434_CY8C21334_CY8C21234_PSoC_Programmable_System-on-Chip-DataSheet-v36_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd82ef47ed&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_a
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: CY8C21334-24PVXI
auf Bestellung 547 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
66+8.51 EUR
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IPF017N08NF2SATMA1 Infineon-IPF017N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f40369135e8d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 259A; 250W; D2PAK-7
Mounting: SMD
Drain current: 259A
Case: D2PAK-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 124nC
On-state resistance: 1.7mΩ
Drain-source voltage: 80V
Power dissipation: 250W
Produkt ist nicht verfügbar
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IAUS300N08S5N012ATMA1 IAUS300N08S5N012.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; Idm: 1.2kA; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB100N10S305ATMA1 Infineon-IPP_B_I100N10S3-DS-v01_00-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908bd4d8595c&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 300W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IAUC100N10S5L040ATMA1 Infineon-IAUC100N10S5L040-DS-v01_00-EN.pdf?fileId=5546d462694c98b401696d0485683542
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 168W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 168W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUC100N10S5L054ATMA1 Infineon-IAUC100N10S5L054-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd429850211
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 400A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 400A
Power dissipation: 130W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IAUC100N10S5N040ATMA1 Infineon-IAUC100N10S5N040-DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164b70f994060e8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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SPP06N80C3 description SPP06N80C3.pdf
SPP06N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
30+2.92 EUR
36+2.38 EUR
37+2.31 EUR
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SPA06N80C3
SPA06N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 39W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
27+3.24 EUR
36+2.37 EUR
50+1.99 EUR
Mindestbestellmenge: 27 Stücke
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BTS500251TEAAUMA1 Infineon-BTS50025-1TEA-DS-V01_00-EN-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d4322f14b7d2a
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 24A; Ch: 1; N-Channel; SMD; -40÷150°C
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 24A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 5mΩ
Supply voltage: 5.8...18V DC
Technology: High Current PROFET
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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FP10R12W1T7B11BOMA1 FP10R12W1T7B11.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: AG-EASY1B-2
Gate-emitter voltage: ±20V
Collector current: 10A
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Pulsed collector current: 20A
Produkt ist nicht verfügbar
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CY8CMBR3110-SX2IT Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: CY8CMBR3110-SX2IT
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
2500+2.7 EUR
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CY8CMBR3110-SX2I Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver/sensor; I2C; proximity detection; SOIC16
Case: SOIC16
Type of integrated circuit: driver/sensor
Interface: I2C
Integrated circuit features: proximity detection
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
48+3 EUR
240+2.7 EUR
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TLF80511TFV33ATMA2 Infineon-TLF80511TF-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159fa3199ac3f4b
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 3.3V; 400mA; TO252-3; SMD; -40÷150°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 0.32V
Output voltage: 3.3V
Output current: 0.4A
Case: TO252-3
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Produkt ist nicht verfügbar
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IPB068N20NM6ATMA1 IPB068N20NM6ATMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 134A; Idm: 536A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 134A
Pulsed drain current: 536A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC070N10NS5ATMA1 BSC070N10NS5-DTE.pdf
BSC070N10NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPC70N04S5-4R6
IPC70N04S5-4R6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Polarisation: unipolar
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Gate charge: 24.2nC
Mounting: SMD
On-state resistance: 4.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 50W
Drain current: 70A
Kind of channel: enhancement
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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IPC70N04S5L-4R2
IPC70N04S5L-4R2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Polarisation: unipolar
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Gate charge: 30nC
Mounting: SMD
On-state resistance: 4.2mΩ
Gate-source voltage: ±16V
Drain-source voltage: 40V
Power dissipation: 50W
Drain current: 70A
Kind of channel: enhancement
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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S29CD016J0PQFM110
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel burst; 66MHz; PQFP80
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel burst
Operating voltage: 2.5...2.75V
Operating frequency: 66MHz
Case: PQFP80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 660 Stücke
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BTS721L1 BTS721L1.pdf
BTS721L1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷6.3A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.9...6.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
On-state resistance: 25mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
Power dissipation: 3.7W
auf Bestellung 393 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+8.64 EUR
12+7.21 EUR
25+6.91 EUR
50+6.89 EUR
Mindestbestellmenge: 10 Stücke
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ITS428L2ATMA1 ITS428L2.pdf
ITS428L2ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252-5
Case: TO252-5
On-state resistance: 50mΩ
Mounting: SMD
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Number of channels: 1
Supply voltage: 4.75...43V DC
Output current: 5.8A
Technology: Industrial PROFET
auf Bestellung 687 Stücke:
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31+2.76 EUR
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BTS5210L BTS5210L.pdf
BTS5210L
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; BSOP12
Output current: 1.8A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: Classic PROFET
Case: BSOP12
Kind of integrated circuit: high-side
Number of channels: 2
On-state resistance: 0.11Ω
Mounting: SMD
Supply voltage: 5.5...40V DC
auf Bestellung 388 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
15+5.94 EUR
22+3.96 EUR
100+3.25 EUR
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BTS5016SDA BTS5016SDA.pdf
BTS5016SDA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 16mΩ
Technology: High Current PROFET
auf Bestellung 2480 Stücke:
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24+3.56 EUR
33+2.64 EUR
35+2.43 EUR
100+2.33 EUR
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BTS723GW BTS723GW.pdf
BTS723GW
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14
Output current: 2.9...4.2A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: Classic PROFET
Case: SO14
Kind of integrated circuit: high-side
Number of channels: 2
On-state resistance: 53mΩ
Mounting: SMD
Supply voltage: 7...58V DC
auf Bestellung 84 Stücke:
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13+6.58 EUR
15+5.75 EUR
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ITS716G ITS716G.pdf
ITS716G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 0.11Ω
Supply voltage: 5.5...40V DC
Technology: Industrial PROFET
auf Bestellung 791 Stücke:
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12+7.18 EUR
14+6.41 EUR
50+5.38 EUR
100+4.83 EUR
250+4.47 EUR
500+4.28 EUR
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BTS5210G BTS5210G.pdf
BTS5210G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; SO14
Output current: 1.8A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: Classic PROFET
Case: SO14
Kind of integrated circuit: high-side
Number of channels: 2
On-state resistance: 0.11Ω
Mounting: SMD
Supply voltage: 5.5...40V DC
auf Bestellung 452 Stücke:
Lieferzeit 14-21 Tag (e)
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18+4.87 EUR
27+3.21 EUR
100+2.55 EUR
250+2.3 EUR
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ISP452 ISP452.pdf
ISP452
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.16Ω
Supply voltage: 5...34V DC
Technology: Industrial PROFET
auf Bestellung 192 Stücke:
Lieferzeit 14-21 Tag (e)
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34+2.55 EUR
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BSP762T BSP762T.pdf
BSP762T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 70mΩ
Technology: Classic PROFET
Output voltage: 40V
auf Bestellung 512 Stücke:
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AnzahlPrivatkunde
19+4.64 EUR
28+3.12 EUR
100+2.43 EUR
250+2.18 EUR
500+1.99 EUR
Mindestbestellmenge: 19 Stücke
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BSP752TXUMA1 Infineon-BSP752T-DS-v01_01-EN.pdf?fileId=5546d46259d9a4bf015a8533f0fa778a
BSP752TXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
auf Bestellung 2216 Stücke:
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36+2.4 EUR
50+1.74 EUR
53+1.62 EUR
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1ED3321MC12NXUMA1 infineon-1ed332xmc12n-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; EiceDRIVER™; SOIC16; Ch: 1
Supply voltage: 3.5...5.5V
Operating temperature: -40...125°C
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Kind of integrated circuit: gate driver; high-side
Integrated circuit features: MOSFET
Case: SOIC16
Impulse rise time: 15ns
Pulse fall time: 15ns
Turn-on time: 85ns
Power dissipation: 0.81W
Number of channels: 1
Insulation voltage: 5.7kV
Produkt ist nicht verfügbar
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IPP034NE7N3GXKSA1 IPP034NE7N3G-DTE.pdf
IPP034NE7N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
18+4.91 EUR
19+4.52 EUR
22+3.89 EUR
25+3.52 EUR
50+3.2 EUR
Mindestbestellmenge: 18 Stücke
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BSC090N03LSGATMA1 BSC090N03LSG-DTE.pdf
BSC090N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BTS3118N BTS3118N-DTE.pdf
BTS3118N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Mounting: SMD
Output current: 2.17A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: HITFET®
Output voltage: 42V
Case: SOT223-3
Kind of integrated circuit: low-side
Number of channels: 1
On-state resistance: 70mΩ
auf Bestellung 1732 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
38+2.3 EUR
51+1.69 EUR
55+1.55 EUR
100+1.42 EUR
Mindestbestellmenge: 38 Stücke
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IPB180P04P4L02ATMA2 IPB180P04P4L02.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -140A; Idm: -720A; 150W
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -140A
Pulsed drain current: -720A
Power dissipation: 150W
Case: PG-TO263-7
Gate-source voltage: -16...5V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB180N04S401ATMA1 Infineon-IPB180N04S4_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c432c5d5d67&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 188W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 188W
Case: TO263-7
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 176nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB180N04S401ATMA1 Infineon-IPB180N04S4_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c432c5d5d67&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
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1000+1.55 EUR
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IPB180N04S4L01ATMA1 Infineon-IPB180N04S4L0110-DS-v01_00-en.pdf?fileId=5546d461464245d3014670ea376d6469
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 180A; 188W; TO263-7
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 188W
Case: TO263-7
Gate-source voltage: -16...20V
Mounting: SMD
Gate charge: 245nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1000+3.59 EUR
Mindestbestellmenge: 1000 Stücke
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BSC220N20NSFDATMA1 BSC220N20NSFD_Rev2.0_2018-03-14.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 52A; 214W; TSON8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 52A
Power dissipation: 214W
Case: TSON8
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 43nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPDQ60R007CM8XTMA1 Infineon-IPDQ60R007CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d8dd992bf0724
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPDQ60R007CM8XTMA1
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
750+28.2 EUR
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CY14V101NA-BA25XIT ?docID=45099
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 25ns; FBGA48; parallel
Mounting: SMD
Type of integrated circuit: SRAM memory
Case: FBGA48
Kind of memory: NV SRAM
Kind of interface: parallel
Kind of package: reel; tape
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 1.65...1.95V DC; 3...3.6V DC
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Produkt ist nicht verfügbar
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S25FS128SDSBHB203 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Application: automotive
Case: BGA24
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of memory: NOR
Kind of interface: serial
Operating temperature: -40...105°C
Operating voltage: 1.7...2V
Operating frequency: 133MHz
Memory: 128Mb FLASH
Interface: QUAD SPI
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPB123N10N3GATMA1 IPB123N10N3G-DTE.pdf
IPB123N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Power dissipation: 94W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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FM16W08-SGTR FM16W08-DTE.pdf
FM16W08-SGTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; parallel 8bit; 8kx8bit; 2.7÷5.5VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: parallel 8bit
Memory organisation: 8kx8bit
Supply voltage: 2.7...5.5V DC
Access time: 70ns
Case: SO28
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BCR112 bcr112series.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Kind of transistor: BRT
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
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BCR112WH6327XTSA1 bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; 250mW; SC70,SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 20
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12000+0.062 EUR
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AUIR3241STR AUIR3241STR.pdf
AUIR3241STR
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 625mW; Ch: 1; 40V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Power: 625mW
Number of channels: 1
Supply voltage: 3...36V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 40V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPD90P04P4L04ATMA2 Infineon-IPD90P04P4L-04-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f7829059b2dee
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -90A; 125W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -90A
Power dissipation: 125W
Case: DPAK; TO252
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 135nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BTS117BKSA1 Infineon-BTS117-DS-v01_04-EN.pdf?fileId=5546d4625a888733015aa350a0970fbc
BTS117BKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; THT; TO220-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: TO220-3
On-state resistance: 0.1Ω
Kind of package: tube
Technology: SIPMOS™
Produkt ist nicht verfügbar
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NAC1081XTMA1 Infineon-Infineon-NAC1080_NAC1081_DS_v01_03-EN-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c7d718a49017db42a43930b11
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: NAC1081XTMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5000+3.61 EUR
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IPP051N15N5XKSA1 Infineon-IPP051N15N5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a0437e3754cb
IPP051N15N5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 120A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 300W
Case: TO220-3
On-state resistance: 5.7mΩ
Mounting: THT
Gate charge: 80nC
Kind of channel: enhancement
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
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14+6.44 EUR
21+4.19 EUR
Mindestbestellmenge: 14 Stücke
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IPP051N15N5AKSA1 Infineon-IPP051N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a0437e3754cb
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; Idm: 480A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 115A
Power dissipation: 300W
Case: PG-TO220-3
On-state resistance: 5.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™ 5
Pulsed drain current: 480A
Produkt ist nicht verfügbar
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IPW60R125P6XKSA1 IPW60R125P6-DTE.pdf
IPW60R125P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
20+4.36 EUR
22+4 EUR
30+3.64 EUR
120+3.12 EUR
150+3.05 EUR
Mindestbestellmenge: 20 Stücke
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IPW60R125CPFKSA1 IPW60R125CP-DTE.pdf
IPW60R125CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
13+6.85 EUR
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IPW60R125C6FKSA1 IPW60R125C6-DTE.pdf
IPW60R125C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R125CFD7XKSA1 Infineon-IPW60R125CFD7-DS-v02_00-EN.pdf?fileId=5546d46261ff57770162002fa4562bb2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 92W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 92W
Case: TO247
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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BSS205NH6327XTSA1 BSS205NH6327XTSA1.pdf
BSS205NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
On-state resistance: 85mΩ
Technology: OptiMOS™ 2
Power dissipation: 0.5W
Drain current: 2.5A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 5277 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
186+0.46 EUR
220+0.39 EUR
253+0.33 EUR
374+0.23 EUR
443+0.19 EUR
633+0.13 EUR
1000+0.12 EUR
3000+0.1 EUR
Mindestbestellmenge: 186 Stücke
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