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IFX1763XEJVXUMA1 IFX1763XEJVXUMA1 Infineon Technologies Infineon-IFX1763-DS-v01_01-EN.pdf?fileId=5546d4624bbf60fb014bca3b274f4e59&ack=t Description: IC REG LINEAR POS ADJ 8DSO
Current - Supply (Max): 31 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.45V @ 500mA
PSRR: 65dB (120Hz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 1.22V
Voltage - Output (Max): 20V
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 20V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TLE5009E1000FUMA1 TLE5009E1000FUMA1 Infineon Technologies Infineon-TLE5009_EXXXX-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a01771b1fec2f3a7f Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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5+4.5 EUR
6+3.99 EUR
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TLE5009E2000FUMA1 TLE5009E2000FUMA1 Infineon Technologies Infineon-TLE5009_EXXXX-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a01771b1fec2f3a7f Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2549 Stücke:
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6+3.97 EUR
10+3.8 EUR
25+3.58 EUR
50+3.43 EUR
100+3.3 EUR
500+3.01 EUR
1000+2.92 EUR
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IFX1763XEJVXUMA1 IFX1763XEJVXUMA1 Infineon Technologies Infineon-IFX1763-DS-v01_01-EN.pdf?fileId=5546d4624bbf60fb014bca3b274f4e59&ack=t Description: IC REG LINEAR POS ADJ 8DSO
Current - Supply (Max): 31 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.45V @ 500mA
PSRR: 65dB (120Hz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 1.22V
Voltage - Output (Max): 20V
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 20V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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IFX54441EJVXUMA1 IFX54441EJVXUMA1 Infineon Technologies INFNS30254-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR POS ADJ 8DSO
Current - Supply (Max): 12 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.4V @ 300mA
PSRR: 65dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.22V
Voltage - Output (Max): 20V
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 20V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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IPB60R190P6ATMA1 IPB60R190P6ATMA1 Infineon Technologies IPx60R190P6.pdf Description: MOSFET N-CH 600V 20.2A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IPB60R380P6ATMA1 IPB60R380P6ATMA1 Infineon Technologies IPx60R380P6.pdf Description: MOSFET N-CH 600V 10.6A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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TLE5009E1000FUMA1 TLE5009E1000FUMA1 Infineon Technologies Infineon-TLE5009_EXXXX-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a01771b1fec2f3a7f Description: SENSOR ANGLE 360DEG SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE5009E2000FUMA1 TLE5009E2000FUMA1 Infineon Technologies Infineon-TLE5009_EXXXX-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a01771b1fec2f3a7f Description: SENSOR ANGLE 360DEG SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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2500+2.78 EUR
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TLI5012BE1000XUMA1 TLI5012BE1000XUMA1 Infineon Technologies Infineon-TLI5012B+E1000-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014ff423fcd077a8 Description: SENSOR ANGLE 360DEG SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLE4241GMXUMA1 TLE4241GMXUMA1 Infineon Technologies Infineon-TLE4241GM-DS-v01_03-EN.pdf?fileId=db3a30431ddc9372011ebaad49bf7f26&ack=t Description: IC LED DRIVER LINEAR PWM 60MA
Part Status: Active
Voltage - Supply (Max): 45V
Voltage - Supply (Min): 4V
Dimming: PWM
Internal Switch(s): Yes
Current - Output / Channel: 60mA
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 40V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE4253EXUMA2 TLE4253EXUMA2 Infineon Technologies Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9 Description: IC REG LINEAR POS ADJ 8DSO-27
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
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12500+1.32 EUR
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IR7184SPBF IR7184SPBF Infineon Technologies ir7184s.pdf?fileId=5546d462533600a4015355d62230182c Description: IC GATE DRVR HALF-BRIDGE 8SO
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Gate Type: IGBT, N-Channel MOSFET
DigiKey Programmable: Not Verified
Part Status: Obsolete
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 700 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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IR7184STRPBF IR7184STRPBF Infineon Technologies ir7184s.pdf?fileId=5546d462533600a4015355d62230182c Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 700 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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IRF7780MTRPBF IRF7780MTRPBF Infineon Technologies irf7780mpbf.pdf?fileId=5546d462533600a401535607b41f1cba Description: MOSFET N-CH 75V 89A DIRECTFET
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 53A, 10V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric ME
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6504 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: DirectFET™ Isometric ME
Vgs(th) (Max) @ Id: 3.7V @ 150µA
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IRL40B209 IRL40B209 Infineon Technologies Infineon-IRL40B209-DS-v02_00-EN.pdf?fileId=5546d46256fb43b301576b16f39706f5 Description: MOSFET N-CH 40V 195A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 15140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRL40B212 IRL40B212 Infineon Technologies Infineon-IRL40S212-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fed0ddc3062d Description: MOSFET N-CH 40V 195A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
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IRL40B215 IRL40B215 Infineon Technologies Infineon-IRL40B215-DS-v01_00-EN.pdf?fileId=5546d4625b3ca4ec015b5a5945a3335f Description: MOSFET N-CH 40V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 143W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 98A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRL60B216 IRL60B216 Infineon Technologies irl60b216.pdf Description: MOSFET N-CH 60V 195A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 15570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRMCK188TR Infineon Technologies Part_Number_Guide_Web.pdf Description: IC MOTOR CONTROLLER
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IRMCK188TY Infineon Technologies Part_Number_Guide_Web.pdf Description: IC MOTOR CONTROLLER
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IPB117N20NFDATMA1 IPB117N20NFDATMA1 Infineon Technologies DS_IPB117N20NFD_2_0.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a3043440adf7501440c8377500152 Description: MOSFET N-CH 200V 84A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 84A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 100 V
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ICE1PCS01GFUMA1 ICE1PCS01GFUMA1 Infineon Technologies Infineon-ICE1PCS01-DS-v01_03-en.pdf?fileId=db3a304412b407950112b427c6f13cc7 Description: IC PFC CTRLR CCM 133KHZ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10.2V ~ 21V
Frequency - Switching: 133kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8-3
Current - Startup: 100 µA
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ICE1PCS02GXUMA1 Infineon Technologies Infineon-ICE1PCS02-DS-v01_02-en.pdf?fileId=db3a304412b407950112b427c9283ccb Description: IC PFC CTLR CCM 8DSOP
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ICE2PCS02XKLA1 ICE2PCS02XKLA1 Infineon Technologies Infineon-ICE2PCS02-DS-v02_04-en.pdf?fileId=db3a304412b407950112b427cc3c3cdc Description: IC PFC CTRLR CCM 65KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DIP-8
Current - Startup: 450 µA
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ICE2QS03XKLA1 ICE2QS03XKLA1 Infineon Technologies dgdl?fileId=db3a304325305e6d012566b50ebd7070 Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Voltage
Voltage - Start Up: 18 V
Part Status: Obsolete
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ICE3B0565JFKLA1 ICE3B0565JFKLA1 Infineon Technologies Infineon-ICE3BXX65J-DS-v02_09-en.pdf?fileId=db3a3043394427e4013953109b207cb2 Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Not For New Designs
Power (Watts): 25 W
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TCA355GGEGXUMA1 Infineon Technologies Infineon-TCA305-DS-v01_01-en%5B1%5D.pdf?fileId=db3a304412b407950112b437b522688a Description: IC PROXIMITY SWITCH 8DSOP
DigiKey Programmable: Not Verified
Proximity Detection: Yes
Supplier Device Package: PG-DSO-8
Number of Inputs: 1
Current - Supply: 600µA
Voltage - Supply: 5V ~ 30V
Operating Temperature: -25°C ~ 85°C
Type: Proximity Only
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCA355GXLLA1 Infineon Technologies Infineon-TCA305-DS-v01_01-en%5B1%5D.pdf?fileId=db3a304412b407950112b437b522688a Description: IC PROXIMITY SWITCH 8DSOP
DigiKey Programmable: Not Verified
Proximity Detection: Yes
Supplier Device Package: PG-DSO-8
Number of Inputs: 1
Current - Supply: 600µA
Voltage - Supply: 5V ~ 30V
Operating Temperature: -25°C ~ 85°C
Type: Proximity Only
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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TLE82612EXUMA2 Infineon Technologies TLE8261-2E.pdf Description: IC SYSTEM BASIS CHIP DSO-36
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TLE82622EXUMA2 Infineon Technologies TLE8262-2E.pdf Description: IC SYSTEM BASIS CHIP DSO-36
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TLE8261EXUMA2 Infineon Technologies TLE8261E.pdf Description: IC SYSTEM BASIS CHIP DSO-36
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TLE8262EXUMA2 Infineon Technologies TLE8262E.pdf Description: IC SYSTEM BASIS CHIP DSO-36
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TLE82632EXUMA2 Infineon Technologies TLE8263-2E.pdf Description: IC SYSTEM BASIS CHIP DSO-36
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TLE8263EXUMA2 Infineon Technologies Infineon-TLE8263E-DS-v01_00-en.pdf?fileId=db3a304320d39d59012186d0e69429fc&ack=t Description: IC SYSTEM BASIS CHIP DSO-36
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TLE8264EXUMA2 Infineon Technologies TLE8264E.pdf Description: IC SYSTEM BASIS CHIP DSO-36
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IPP50R140CPXKSA1 IPP50R140CPXKSA1 Infineon Technologies Infineon-IPP50R140CP-DS-v02_00-en.pdf?fileId=db3a30432313ff5e0123850733ed65ab Description: MOSFET N-CH 550V 23A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO220-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
auf Bestellung 108 Stücke:
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3+9.32 EUR
50+4.82 EUR
100+4.38 EUR
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IRL40S212 IRL40S212 Infineon Technologies Infineon-IRL40S212-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fed0ddc3062d Description: MOSFET N-CH 40V 195A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
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IPD60R600CPATMA1 IPD60R600CPATMA1 Infineon Technologies Infineon-IPD60R600CP-DS-v02_01-en.pdf?fileId=db3a30432313ff5e012385657d1567e3 Description: MOSFET N-CH 600V 6.1A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IPP06CN10NGXKSA1 IPP06CN10NGXKSA1 Infineon Technologies IP(B,I,P)06CN10N_G.pdf Description: MOSFET N-CH 100V 100A TO220-3
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IPP12CN10NGXKSA1 IPP12CN10NGXKSA1 Infineon Technologies dgdl?fileId=db3a304412b407950112b42c236e467c Description: MOSFET N-CH 100V 67A TO220-3
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IPP35CN10NGXKSA1 IPP35CN10NGXKSA1 Infineon Technologies dgdl?fileId=db3a304412b407950112b42b457b44b1 Description: MOSFET N-CH 100V 27A TO220-3
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IPI075N15N3GXKSA1 IPI075N15N3GXKSA1 Infineon Technologies Infineon-IPP075N15N3_G-DS-v02_06-en.pdf?fileId=db3a30432313ff5e012399f743143bad Description: MOSFET N-CH 150V 100A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
auf Bestellung 591 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.35 EUR
50+6.57 EUR
100+6.14 EUR
500+5.2 EUR
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IPP052NE7N3GHKSA1 IPP052NE7N3GHKSA1 Infineon Technologies Infineon-IPP052NE7N3+G-DS-v02_01-EN.pdf?fileId=5546d4624fb7fef2014ff96f171905f2 Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V
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IPP100N08N3GHKSA1 IPP100N08N3GHKSA1 Infineon Technologies Infineon-IPP100N08N3+G-DS-v02_02-EN.pdf?fileId=5546d4624fb7fef2014ff98a754b064b Description: MOSFET N-CH 80V 70A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V
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IPP093N06N3GHKSA1 IPP093N06N3GHKSA1 Infineon Technologies Infineon-IPP_B093N06N3-DS-v01_02-en.pdf?fileId=db3a30432313ff5e0123a3593b1425eb Description: MOSFET N-CH 60V 50A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 34µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IPP086N10N3GHKSA1 IPP086N10N3GHKSA1 Infineon Technologies dgdl?fileId=db3a30431ce5fb52011d1ac5c8fa1358 Description: MOSFET N-CH 100V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 73A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IPP084N06L3GHKSA1 IPP084N06L3GHKSA1 Infineon Technologies dgdl?fileId=db3a30433ba77ced013bade4048934ce Description: MOSFET N-CH 60V 50A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IPP075N15N3GHKSA1 IPP075N15N3GHKSA1 Infineon Technologies Infineon-IPP075N15N3_G-DS-v02_06-en.pdf?fileId=db3a30432313ff5e012399f743143bad Description: MOSFET N-CH 150V 100A TO220-3
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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IPP072N10N3GHKSA1 IPP072N10N3GHKSA1 Infineon Technologies Infineon-IPP072N10N3_G-DS-v02_01-en.pdf?fileId=db3a30432313ff5e012393bed2d20405 Description: MOSFET N-CH 100V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IPP057N08N3GHKSA1 IPP057N08N3GHKSA1 Infineon Technologies Infineon-IPP057N08N3-DS-v01_02-en.pdf?fileId=db3a304317a748360117cf0cf5951d06 Description: MOSFET N-CH 80V 80A TO220-3
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IPP057N06N3GHKSA1 IPP057N06N3GHKSA1 Infineon Technologies Infineon-B057N06N3-DS-v02_02-en.pdf?fileId=db3a30431ddc9372011e2b439f1d4d93 Description: MOSFET N-CH 60V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 58µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IPP052N06L3GHKSA1 IPP052N06L3GHKSA1 Infineon Technologies Infineon-IPP_B052N06L3-DS-v02_04-en.pdf?fileId=db3a30432313ff5e0123a32d97c125b6 Description: MOSFET N-CH 60V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IPP045N10N3GHKSA1 IPP045N10N3GHKSA1 Infineon Technologies dgdl?fileId=db3a30431ce5fb52011d1e8b0cc31586 Description: MOSFET N-CH 100V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
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IPP040N06N3GHKSA1 IPP040N06N3GHKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 60V 90A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
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IPP037N08N3GHKSA1 IPP037N08N3GHKSA1 Infineon Technologies IPP037N08N3%2CIPI037N08N3.pdf Description: MOSFET N-CH 80V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.75mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
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IPP032N06N3GHKSA1 IPP032N06N3GHKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Produkt ist nicht verfügbar
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IPP030N10N3GHKSA1 IPP030N10N3GHKSA1 Infineon Technologies dgdl?fileId=db3a30431ce5fb52011d1ea18a3a15b5 Description: MOSFET N-CH 100V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V
Produkt ist nicht verfügbar
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IPP024N06N3GHKSA1 IPP024N06N3GHKSA1 Infineon Technologies Infineon-IPP024N06N3-DS-v02_02-en.pdf?fileId=db3a30432313ff5e01239f1f52a67151 Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
Produkt ist nicht verfügbar
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KIT_XMC47_RELAX_5V_AD_V1 KIT_XMC47_RELAX_5V_AD_V1 Infineon Technologies Infineon-XMC4700-XMC4800-DS-v01_00-EN.pdf?fileId=5546d462518ffd850151908ea8db00b3 Description: RELAX KIT FOR 5V SHIELDS XMC4700
Produkt ist nicht verfügbar
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IFX1763XEJVXUMA1 Infineon-IFX1763-DS-v01_01-EN.pdf?fileId=5546d4624bbf60fb014bca3b274f4e59&ack=t
IFX1763XEJVXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO
Current - Supply (Max): 31 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.45V @ 500mA
PSRR: 65dB (120Hz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 1.22V
Voltage - Output (Max): 20V
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 20V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TLE5009E1000FUMA1 Infineon-TLE5009_EXXXX-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a01771b1fec2f3a7f
TLE5009E1000FUMA1
Hersteller: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.5 EUR
6+3.99 EUR
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TLE5009E2000FUMA1 Infineon-TLE5009_EXXXX-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a01771b1fec2f3a7f
TLE5009E2000FUMA1
Hersteller: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2549 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.49 EUR
6+3.97 EUR
10+3.8 EUR
25+3.58 EUR
50+3.43 EUR
100+3.3 EUR
500+3.01 EUR
1000+2.92 EUR
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IFX1763XEJVXUMA1 Infineon-IFX1763-DS-v01_01-EN.pdf?fileId=5546d4624bbf60fb014bca3b274f4e59&ack=t
IFX1763XEJVXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO
Current - Supply (Max): 31 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.45V @ 500mA
PSRR: 65dB (120Hz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 1.22V
Voltage - Output (Max): 20V
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 20V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IFX54441EJVXUMA1 INFNS30254-1.pdf?t.download=true&u=5oefqw
IFX54441EJVXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO
Current - Supply (Max): 12 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.4V @ 300mA
PSRR: 65dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.22V
Voltage - Output (Max): 20V
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 20V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPB60R190P6ATMA1 IPx60R190P6.pdf
IPB60R190P6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPB60R380P6ATMA1 IPx60R380P6.pdf
IPB60R380P6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE5009E1000FUMA1 Infineon-TLE5009_EXXXX-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a01771b1fec2f3a7f
TLE5009E1000FUMA1
Hersteller: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE5009E2000FUMA1 Infineon-TLE5009_EXXXX-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a01771b1fec2f3a7f
TLE5009E2000FUMA1
Hersteller: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.78 EUR
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TLI5012BE1000XUMA1 Infineon-TLI5012B+E1000-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014ff423fcd077a8
TLI5012BE1000XUMA1
Hersteller: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+3.7 EUR
Mindestbestellmenge: 2500 Stücke
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TLE4241GMXUMA1 Infineon-TLE4241GM-DS-v01_03-EN.pdf?fileId=db3a30431ddc9372011ebaad49bf7f26&ack=t
TLE4241GMXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER LINEAR PWM 60MA
Part Status: Active
Voltage - Supply (Max): 45V
Voltage - Supply (Min): 4V
Dimming: PWM
Internal Switch(s): Yes
Current - Output / Channel: 60mA
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 40V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE4253EXUMA2 Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9
TLE4253EXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO-27
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.39 EUR
5000+1.36 EUR
7500+1.34 EUR
12500+1.32 EUR
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IR7184SPBF ir7184s.pdf?fileId=5546d462533600a4015355d62230182c
IR7184SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SO
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Gate Type: IGBT, N-Channel MOSFET
DigiKey Programmable: Not Verified
Part Status: Obsolete
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 700 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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IR7184STRPBF ir7184s.pdf?fileId=5546d462533600a4015355d62230182c
IR7184STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 700 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF7780MTRPBF irf7780mpbf.pdf?fileId=5546d462533600a401535607b41f1cba
IRF7780MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 89A DIRECTFET
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 53A, 10V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric ME
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6504 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: DirectFET™ Isometric ME
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Produkt ist nicht verfügbar
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IRL40B209 Infineon-IRL40B209-DS-v02_00-EN.pdf?fileId=5546d46256fb43b301576b16f39706f5
IRL40B209
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 15140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRL40B212 Infineon-IRL40S212-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fed0ddc3062d
IRL40B212
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Produkt ist nicht verfügbar
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IRL40B215 Infineon-IRL40B215-DS-v01_00-EN.pdf?fileId=5546d4625b3ca4ec015b5a5945a3335f
IRL40B215
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 143W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 98A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRL60B216 irl60b216.pdf
IRL60B216
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 15570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRMCK188TR Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: IC MOTOR CONTROLLER
Produkt ist nicht verfügbar
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IRMCK188TY Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: IC MOTOR CONTROLLER
Produkt ist nicht verfügbar
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IPB117N20NFDATMA1 DS_IPB117N20NFD_2_0.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a3043440adf7501440c8377500152
IPB117N20NFDATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 84A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 84A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 100 V
Produkt ist nicht verfügbar
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ICE1PCS01GFUMA1 Infineon-ICE1PCS01-DS-v01_03-en.pdf?fileId=db3a304412b407950112b427c6f13cc7
ICE1PCS01GFUMA1
Hersteller: Infineon Technologies
Description: IC PFC CTRLR CCM 133KHZ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10.2V ~ 21V
Frequency - Switching: 133kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8-3
Current - Startup: 100 µA
Produkt ist nicht verfügbar
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ICE1PCS02GXUMA1 Infineon-ICE1PCS02-DS-v01_02-en.pdf?fileId=db3a304412b407950112b427c9283ccb
Hersteller: Infineon Technologies
Description: IC PFC CTLR CCM 8DSOP
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ICE2PCS02XKLA1 Infineon-ICE2PCS02-DS-v02_04-en.pdf?fileId=db3a304412b407950112b427cc3c3cdc
ICE2PCS02XKLA1
Hersteller: Infineon Technologies
Description: IC PFC CTRLR CCM 65KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DIP-8
Current - Startup: 450 µA
Produkt ist nicht verfügbar
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ICE2QS03XKLA1 dgdl?fileId=db3a304325305e6d012566b50ebd7070
ICE2QS03XKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Voltage
Voltage - Start Up: 18 V
Part Status: Obsolete
Produkt ist nicht verfügbar
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ICE3B0565JFKLA1 Infineon-ICE3BXX65J-DS-v02_09-en.pdf?fileId=db3a3043394427e4013953109b207cb2
ICE3B0565JFKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Not For New Designs
Power (Watts): 25 W
Produkt ist nicht verfügbar
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TCA355GGEGXUMA1 Infineon-TCA305-DS-v01_01-en%5B1%5D.pdf?fileId=db3a304412b407950112b437b522688a
Hersteller: Infineon Technologies
Description: IC PROXIMITY SWITCH 8DSOP
DigiKey Programmable: Not Verified
Proximity Detection: Yes
Supplier Device Package: PG-DSO-8
Number of Inputs: 1
Current - Supply: 600µA
Voltage - Supply: 5V ~ 30V
Operating Temperature: -25°C ~ 85°C
Type: Proximity Only
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCA355GXLLA1 Infineon-TCA305-DS-v01_01-en%5B1%5D.pdf?fileId=db3a304412b407950112b437b522688a
Hersteller: Infineon Technologies
Description: IC PROXIMITY SWITCH 8DSOP
DigiKey Programmable: Not Verified
Proximity Detection: Yes
Supplier Device Package: PG-DSO-8
Number of Inputs: 1
Current - Supply: 600µA
Voltage - Supply: 5V ~ 30V
Operating Temperature: -25°C ~ 85°C
Type: Proximity Only
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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TLE82612EXUMA2 TLE8261-2E.pdf
Hersteller: Infineon Technologies
Description: IC SYSTEM BASIS CHIP DSO-36
Produkt ist nicht verfügbar
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TLE82622EXUMA2 TLE8262-2E.pdf
Hersteller: Infineon Technologies
Description: IC SYSTEM BASIS CHIP DSO-36
Produkt ist nicht verfügbar
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TLE8261EXUMA2 TLE8261E.pdf
Hersteller: Infineon Technologies
Description: IC SYSTEM BASIS CHIP DSO-36
Produkt ist nicht verfügbar
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TLE8262EXUMA2 TLE8262E.pdf
Hersteller: Infineon Technologies
Description: IC SYSTEM BASIS CHIP DSO-36
Produkt ist nicht verfügbar
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TLE82632EXUMA2 TLE8263-2E.pdf
Hersteller: Infineon Technologies
Description: IC SYSTEM BASIS CHIP DSO-36
Produkt ist nicht verfügbar
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TLE8263EXUMA2 Infineon-TLE8263E-DS-v01_00-en.pdf?fileId=db3a304320d39d59012186d0e69429fc&ack=t
Hersteller: Infineon Technologies
Description: IC SYSTEM BASIS CHIP DSO-36
Produkt ist nicht verfügbar
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TLE8264EXUMA2 TLE8264E.pdf
Hersteller: Infineon Technologies
Description: IC SYSTEM BASIS CHIP DSO-36
Produkt ist nicht verfügbar
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IPP50R140CPXKSA1 Infineon-IPP50R140CP-DS-v02_00-en.pdf?fileId=db3a30432313ff5e0123850733ed65ab
IPP50R140CPXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 550V 23A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO220-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
auf Bestellung 108 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.32 EUR
50+4.82 EUR
100+4.38 EUR
Mindestbestellmenge: 3 Stücke
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IRL40S212 Infineon-IRL40S212-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fed0ddc3062d
IRL40S212
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Produkt ist nicht verfügbar
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IPD60R600CPATMA1 Infineon-IPD60R600CP-DS-v02_01-en.pdf?fileId=db3a30432313ff5e012385657d1567e3
IPD60R600CPATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6.1A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPP06CN10NGXKSA1 IP(B,I,P)06CN10N_G.pdf
IPP06CN10NGXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO220-3
Produkt ist nicht verfügbar
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IPP12CN10NGXKSA1 dgdl?fileId=db3a304412b407950112b42c236e467c
IPP12CN10NGXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 67A TO220-3
Produkt ist nicht verfügbar
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IPP35CN10NGXKSA1 dgdl?fileId=db3a304412b407950112b42b457b44b1
IPP35CN10NGXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 27A TO220-3
Produkt ist nicht verfügbar
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IPI075N15N3GXKSA1 Infineon-IPP075N15N3_G-DS-v02_06-en.pdf?fileId=db3a30432313ff5e012399f743143bad
IPI075N15N3GXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 100A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
auf Bestellung 591 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.35 EUR
50+6.57 EUR
100+6.14 EUR
500+5.2 EUR
Mindestbestellmenge: 2 Stücke
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IPP052NE7N3GHKSA1 Infineon-IPP052NE7N3+G-DS-v02_01-EN.pdf?fileId=5546d4624fb7fef2014ff96f171905f2
IPP052NE7N3GHKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V
Produkt ist nicht verfügbar
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IPP100N08N3GHKSA1 Infineon-IPP100N08N3+G-DS-v02_02-EN.pdf?fileId=5546d4624fb7fef2014ff98a754b064b
IPP100N08N3GHKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 70A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V
Produkt ist nicht verfügbar
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IPP093N06N3GHKSA1 Infineon-IPP_B093N06N3-DS-v01_02-en.pdf?fileId=db3a30432313ff5e0123a3593b1425eb
IPP093N06N3GHKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 34µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP086N10N3GHKSA1 dgdl?fileId=db3a30431ce5fb52011d1ac5c8fa1358
IPP086N10N3GHKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 73A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP084N06L3GHKSA1 dgdl?fileId=db3a30433ba77ced013bade4048934ce
IPP084N06L3GHKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP075N15N3GHKSA1 Infineon-IPP075N15N3_G-DS-v02_06-en.pdf?fileId=db3a30432313ff5e012399f743143bad
IPP075N15N3GHKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 100A TO220-3
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
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IPP072N10N3GHKSA1 Infineon-IPP072N10N3_G-DS-v02_01-en.pdf?fileId=db3a30432313ff5e012393bed2d20405
IPP072N10N3GHKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP057N08N3GHKSA1 Infineon-IPP057N08N3-DS-v01_02-en.pdf?fileId=db3a304317a748360117cf0cf5951d06
IPP057N08N3GHKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 80A TO220-3
Produkt ist nicht verfügbar
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IPP057N06N3GHKSA1 Infineon-B057N06N3-DS-v02_02-en.pdf?fileId=db3a30431ddc9372011e2b439f1d4d93
IPP057N06N3GHKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 58µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP052N06L3GHKSA1 Infineon-IPP_B052N06L3-DS-v02_04-en.pdf?fileId=db3a30432313ff5e0123a32d97c125b6
IPP052N06L3GHKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP045N10N3GHKSA1 dgdl?fileId=db3a30431ce5fb52011d1e8b0cc31586
IPP045N10N3GHKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
Produkt ist nicht verfügbar
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IPP040N06N3GHKSA1 fundamentals-of-power-semiconductors
IPP040N06N3GHKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Produkt ist nicht verfügbar
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IPP037N08N3GHKSA1 IPP037N08N3%2CIPI037N08N3.pdf
IPP037N08N3GHKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.75mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
Produkt ist nicht verfügbar
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IPP032N06N3GHKSA1 fundamentals-of-power-semiconductors
IPP032N06N3GHKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Produkt ist nicht verfügbar
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IPP030N10N3GHKSA1 dgdl?fileId=db3a30431ce5fb52011d1ea18a3a15b5
IPP030N10N3GHKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V
Produkt ist nicht verfügbar
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IPP024N06N3GHKSA1 Infineon-IPP024N06N3-DS-v02_02-en.pdf?fileId=db3a30432313ff5e01239f1f52a67151
IPP024N06N3GHKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
Produkt ist nicht verfügbar
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KIT_XMC47_RELAX_5V_AD_V1 Infineon-XMC4700-XMC4800-DS-v01_00-EN.pdf?fileId=5546d462518ffd850151908ea8db00b3
KIT_XMC47_RELAX_5V_AD_V1
Hersteller: Infineon Technologies
Description: RELAX KIT FOR 5V SHIELDS XMC4700
Produkt ist nicht verfügbar
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