Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (129435) > Seite 2158 nach 2158

Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver

Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Mounting: SMD
Supply voltage: 10...20V
Output current: -0.7...0.29A
Type of integrated circuit: driver
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Voltage class: 650V
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: IGBT half-bridge; MOSFET half-bridge

Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Mounting: SMD
Supply voltage: 10...20V
Output current: -0.7...0.29A
Type of integrated circuit: driver
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Voltage class: 650V
Kind of package: reel; tape
Case: PG-DSO-14
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: IGBT half-bridge; MOSFET half-bridge

Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT

Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement

Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 66A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Gate charge: 34nC

Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET

Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 140A; AG-ECONO3-4; Inverter; 480W
Type of semiconductor module: IGBT
Topology: NTC thermistor
Collector current: 140A
Case: AG-ECONO3-4
Application: Inverter
Gate-emitter voltage: ±20V
Power dissipation: 480W
Technology: Field Stop; Trench

Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller

Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller

Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; Idm: 720A; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Case: D2PAK; TO263
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 720A
Gate charge: 168nC
Application: automotive industry

Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TO252-5-13
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-13
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V

Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhancement

Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Features of semiconductor devices: Kelvin terminal

Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11A; 156W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 156W
Case: I2PAK; TO262
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 68nC
Kind of channel: enhancement