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S29GL256S90TFI020 S29GL256S90TFI020 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1797 Stücke:
Lieferzeit 10-14 Tag (e)
2+20.29 EUR
10+18.86 EUR
25+18.28 EUR
91+17.47 EUR
182+17.04 EUR
273+16.79 EUR
546+16.36 EUR
1001+16.01 EUR
Mindestbestellmenge: 2 Stücke
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S29GL256S90FHI023 S29GL256S90FHI023 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1600 Stücke
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IPD40DP06NMATMA1 IPD40DP06NMATMA1 Infineon Technologies Infineon-IPD40DP06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0667894e724f Description: MOSFET P-CH 60V 4.3A TO252-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4V @ 166µA
Power Dissipation (Max): 19W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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IPD40DP06NMATMA1 IPD40DP06NMATMA1 Infineon Technologies Infineon-IPD40DP06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0667894e724f Description: MOSFET P-CH 60V 4.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4V @ 166µA
Power Dissipation (Max): 19W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1439 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.12 EUR
16+1.32 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
Mindestbestellmenge: 10 Stücke
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IPT022N10NF2SATMA1 IPT022N10NF2SATMA1 Infineon Technologies Infineon-IPT022N10NF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183f00b5b7e4657 Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
1800+2.94 EUR
Mindestbestellmenge: 1800 Stücke
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IPT022N10NF2SATMA1 IPT022N10NF2SATMA1 Infineon Technologies Infineon-IPT022N10NF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183f00b5b7e4657 Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
auf Bestellung 2582 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.69 EUR
10+5.74 EUR
100+4.06 EUR
500+3.49 EUR
Mindestbestellmenge: 3 Stücke
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IPT017N10NF2SATMA1 IPT017N10NF2SATMA1 Infineon Technologies Infineon-IPT017N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183ef8585e621b3 Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 294A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 216µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9300 pF @ 50 V
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)
1800+3.28 EUR
3600+3.22 EUR
Mindestbestellmenge: 1800 Stücke
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IPT017N10NF2SATMA1 IPT017N10NF2SATMA1 Infineon Technologies Infineon-IPT017N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183ef8585e621b3 Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 294A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 216µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9300 pF @ 50 V
auf Bestellung 4615 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.53 EUR
10+6.32 EUR
100+4.5 EUR
500+3.95 EUR
Mindestbestellmenge: 3 Stücke
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IPF024N10NF2SATMA1 IPF024N10NF2SATMA1 Infineon Technologies Infineon-IPF024N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f45eff876221 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 227A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO263-7-14
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.63 EUR
Mindestbestellmenge: 800 Stücke
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IPF024N10NF2SATMA1 IPF024N10NF2SATMA1 Infineon Technologies Infineon-IPF024N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f45eff876221 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 227A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO263-7-14
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
auf Bestellung 1293 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.38 EUR
10+4.83 EUR
100+3.38 EUR
Mindestbestellmenge: 3 Stücke
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IPB026N10NF2SATMA1 IPB026N10NF2SATMA1 Infineon Technologies Infineon-IPB026N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4c3afb01b06 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+3.49 EUR
1600+3.26 EUR
Mindestbestellmenge: 800 Stücke
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IPB026N10NF2SATMA1 IPB026N10NF2SATMA1 Infineon Technologies Infineon-IPB026N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4c3afb01b06 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
auf Bestellung 1845 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.4 EUR
10+6.22 EUR
100+4.43 EUR
Mindestbestellmenge: 3 Stücke
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IPF016N10NF2SATMA1 IPF016N10NF2SATMA1 Infineon Technologies Infineon-IPF016N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f3f130b05e8a Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 274A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-TO263-7-14
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
800+3.39 EUR
1600+3.18 EUR
2400+3.07 EUR
Mindestbestellmenge: 800 Stücke
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IPF016N10NF2SATMA1 IPF016N10NF2SATMA1 Infineon Technologies Infineon-IPF016N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f3f130b05e8a Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 274A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-TO263-7-14
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.2 EUR
10+6.08 EUR
100+4.32 EUR
Mindestbestellmenge: 3 Stücke
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IPB050N10NF2SATMA1 IPB050N10NF2SATMA1 Infineon Technologies Infineon-IPB050N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc12431b1b Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 5.05mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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IPB050N10NF2SATMA1 IPB050N10NF2SATMA1 Infineon Technologies Infineon-IPB050N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc12431b1b Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 5.05mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 548 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.53 EUR
10+2.48 EUR
100+1.73 EUR
Mindestbestellmenge: 6 Stücke
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BC857BE6433HTMA1 BC857BE6433HTMA1 Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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BC 857BF E6327 BC 857BF E6327 Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 45V 0.1A PG-TSFP-3-1
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: PG-TSFP-3-1
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 36000 Stücke
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IDP04E120XKSA1 IDP04E120XKSA1 Infineon Technologies INFNS14025-1.pdf?t.download=true&u=5oefqw Description: DIODE STD 1200V 11.2A PGTO22021
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 11.2A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 4 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 4489 Stücke:
Lieferzeit 10-14 Tag (e)
289+1.88 EUR
Mindestbestellmenge: 289 Stücke
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CY91F524BSDPMC1-GSE1 Infineon Technologies Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 26x12b SAR; D/A 1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 44
DigiKey Programmable: Not Verified
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CYW20721B1KUMLG CYW20721B1KUMLG Infineon Technologies Infineon-CYW20721_Enhanced_Low_Power_BR_EDR_BLE_Bluetooth_5.0_SOC_for_Audio-AdditionalTechnicalInformation-v06_00-EN.pdf?fileId=8ac78c8c7e7124d1017ebeab5c8a566e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 1MB Flash, 512kB RAM, 2MB ROM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5dBm
Protocol: Bluetooth v5.1 + EDR
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 8DPSK, 8PSK, DQPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, PCM, PDM, SPI, UART
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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230+13.54 EUR
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CYBLE-202007-01 CYBLE-202007-01 Infineon Technologies Infineon-CYBLE-212006-01_CYBLE-202007-01_CYBLE-202013-11_EZ-BLE_Creator_XR_Module-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee303b069f4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Description: RF TXRX MOD BT TH SMD
Packaging: Tape & Reel (TR)
Package / Case: 30-SMD Module
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 4.5V
Power - Output: 7.5dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA
Current - Transmitting: 27mA
Antenna Type: Integrated, Trace
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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CYBLE-202007-01 CYBLE-202007-01 Infineon Technologies Infineon-CYBLE-212006-01_CYBLE-202007-01_CYBLE-202013-11_EZ-BLE_Creator_XR_Module-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee303b069f4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Description: RF TXRX MOD BT TH SMD
Packaging: Cut Tape (CT)
Package / Case: 30-SMD Module
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 4.5V
Power - Output: 7.5dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA
Current - Transmitting: 27mA
Antenna Type: Integrated, Trace
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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CY7C131-55NXC CY7C131-55NXC Infineon Technologies CY7C130,131(A).pdf Description: IC SRAM 8KBIT PARALLEL 52PQFP
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CY7C131-55JXC CY7C131-55JXC Infineon Technologies CY7C130,131(A).pdf Description: IC SRAM 8KBIT PARALLEL 52PLCC
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STK12C68-SF25I STK12C68-SF25I Infineon Technologies download Description: IC NVSRAM 64KBIT PARALLEL 28SOIC
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 28-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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DDB6U50N16W1RPBPSA1 DDB6U50N16W1RPBPSA1 Infineon Technologies Infineon-DDB6U50N16W1RP-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c7fb5929e017fc0ce29bd04ad Description: IGBT MODULE 1200V 50A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Single Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 6.2 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
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TD250N16KOFAHPSA1 TD250N16KOFAHPSA1 Infineon Technologies Description: SCR MODULE 1800V 410A MODULE
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D1050N16TXPSA1 Infineon Technologies D1050N.pdf Description: DIODE GEN PURP 1.6KV 1050A
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DT250N16KOFHPSA1 Infineon Technologies TT250N.pdf Description: SCR MODULE 1.6KV MODULE
Voltage - Off State: 1.6 kV
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 250 A
Number of SCRs, Diodes: 2 SCRs
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
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TLE8880TN Infineon Technologies Description: TLE8880 - ALTERNATOR REGULATOR
Part Status: Active
Supplier Device Package: PG-TO220-5-12
Applications: Converter, Automotive Engine Control
Operating Temperature: -40°C ~ 175°C
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Bulk
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TLE8881TNAKSA1 TLE8881TNAKSA1 Infineon Technologies Infineon-TLE8880_PB-ProductBrief-v01_01-EN.pdf?fileId=5546d461454603990145b2e11f484ec6 Description: ALTERNATOR_IC
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: PG-TO220-5-12
Applications: Converter, Automotive Engine Control
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Input: 6V ~ 18V
Number of Outputs: 1
Mounting Type: Through Hole
Voltage - Output: 12V
Package / Case: TO-220-5
Packaging: Tube
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TLE88812TN2AKSA1 TLE88812TN2AKSA1 Infineon Technologies Infineon-TLE8881-2-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d5d74fb3a0492 Description: ALTERNATOR_REGULATOR_ICS PG-TO22
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Supplier Device Package: PG-TO220-5-12
Applications: Alternator
Operating Temperature: -40°C ~ 175°C
Voltage - Input: 10.6V ~ 16V
Number of Outputs: 1
Mounting Type: Through Hole
Voltage - Output: 12V
Package / Case: TO-220-5
Packaging: Tube
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IPD06P005NSAUMA1 IPD06P005NSAUMA1 Infineon Technologies Description: MOSFET P-CH 60V 6.5A TO252-3
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
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IPD06P002NSAUMA1 Infineon Technologies Description: MOSFET P-CH 60V 35A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
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IRF3546MTRPBF IRF3546MTRPBF Infineon Technologies irf3546m.pdf?fileId=5546d462533600a4015355df3145191e Description: MOSFET 4N-CH 25V 16A 41QFN
Packaging: Tape & Reel (TR)
Package / Case: 41-PowerVFQFN
Mounting Type: Surface Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 13V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: 41-PQFN (6x8)
Part Status: Obsolete
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S25HL01GTDPBHM030 Infineon Technologies Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_Flash_Quad_SPI_1.8V_3.0V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f1a4242c57 Description: IC FLASH 1GBIT SPI/QUAD 24FBGA
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CYT3BB5CEBQ0AESGST CYT3BB5CEBQ0AESGST Infineon Technologies Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342 Description: IC MCU 32BT 4.0625MB FLSH 100QFP
RAM Size: 768K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 100MHz, 250MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Core Size: 32-Bit Dual-Core
Data Converters: A/D 55x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
Number of I/O: 72
Part Status: Active
Supplier Device Package: 100-TEQFP (14x14)
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
DigiKey Programmable: Not Verified
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IR38060MTRPBF IR38060MTRPBF Infineon Technologies reference-design-irdc38060-5546d462533600a4015364c4513f29f8 Description: IC REG BUCK ADJ 6A 35PQFN
Packaging: Cut Tape (CT)
Package / Case: 35-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 35-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.38V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
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1000+4.07 EUR
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IRFS4115PBF IRFS4115PBF Infineon Technologies irfs4115pbf.pdf?fileId=5546d462533600a401535636e5d2218f description Description: MOSFET N-CH 150V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 62A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
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CY8C201A0-LDX2I CY8C201A0-LDX2I Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CAPSENSE EXP 10 I/O 16QFN
DigiKey Programmable: Not Verified
LED Driver Channels: Up to 5
Proximity Detection: No
Supplier Device Package: 16-QFN (3x3)
Number of Inputs: Up to 6
Current - Supply: 1.5mA
Voltage - Supply: 2.4V ~ 5.25V
Operating Temperature: -40°C ~ 85°C
Type: Buttons, Slider
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tray
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CYW43439KUBGT CYW43439KUBGT Infineon Technologies CYW43439KUBGT.pdf Description: IC RF TXRX+MCU BLE 63WLBGA
DigiKey Programmable: Not Verified
GPIO: 5
Supplier Device Package: 63-WLBGA (2.87x4.87)
Current - Transmitting: 271mA ~ 320mA
Data Rate (Max): 4Mbps
Current - Receiving: 37mA ~ 43mA
Protocol: 802.11a/b/g/n, Bluetooth v5.2 + EDR, Class 1, 2
Power - Output: 10dBm
Voltage - Supply: 3V ~ 4.8V
Operating Temperature: -30°C ~ 70°C (TA)
Type: TxRx + MCU
Memory Size: 512kB SRAM, 640kB ROM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Part Status: Active
Serial Interfaces: GPIO, JTAG, SDIO, SPI, UART
RF Family/Standard: Bluetooth, WiFi
Modulation: 8-DPSK, 64-QAM, 8-DQPSK, CCK, DSSS, GFSK, OFDM
Sensitivity: -99.5dBm
Package / Case: 63-UFBGA, WLBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CYW43439KUBGT CYW43439KUBGT Infineon Technologies CYW43439KUBGT.pdf Description: IC RF TXRX+MCU BLE 63WLBGA
DigiKey Programmable: Not Verified
Part Status: Active
Type: TxRx + MCU
Memory Size: 512kB SRAM, 640kB ROM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -99.5dBm
Package / Case: 63-UFBGA, WLBGA
Packaging: Cut Tape (CT)
Serial Interfaces: GPIO, JTAG, SDIO, SPI, UART
RF Family/Standard: Bluetooth, WiFi
Modulation: 8-DPSK, 64-QAM, 8-DQPSK, CCK, DSSS, GFSK, OFDM
GPIO: 5
Supplier Device Package: 63-WLBGA (2.87x4.87)
Current - Transmitting: 271mA ~ 320mA
Data Rate (Max): 4Mbps
Current - Receiving: 37mA ~ 43mA
Protocol: 802.11a/b/g/n, Bluetooth v5.2 + EDR, Class 1, 2
Power - Output: 10dBm
Voltage - Supply: 3V ~ 4.8V
Operating Temperature: -30°C ~ 70°C (TA)
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3+9.9 EUR
10+8.59 EUR
25+8.13 EUR
100+7.49 EUR
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500+6.83 EUR
1000+6.58 EUR
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CYBLE-212020-01 CYBLE-212020-01 Infineon Technologies Infineon-CYBLE-212020-01-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1d41a67e4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: RF TXRX MOD BT TH SMD
Packaging: Tape & Reel (TR)
Package / Case: 31-SMD Module
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Data Rate: 8Mbps
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA
Current - Transmitting: 15.6mA
Antenna Type: Integrated, Trace
Utilized IC / Part: CYBLE-01211-00, CYBLE-212019-00
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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CYBLE-212020-01 CYBLE-212020-01 Infineon Technologies Infineon-CYBLE-212020-01-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1d41a67e4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: RF TXRX MOD BT TH SMD
Packaging: Cut Tape (CT)
Package / Case: 31-SMD Module
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Data Rate: 8Mbps
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA
Current - Transmitting: 15.6mA
Antenna Type: Integrated, Trace
Utilized IC / Part: CYBLE-01211-00, CYBLE-212019-00
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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CY8C4147AZQ-S465 CY8C4147AZQ-S465 Infineon Technologies PSoC_4100S_Plus_RevH_9-14-18.pdf Description: IC MCU 32BIT 128KB FLASH 64TQFP
DigiKey Programmable: Not Verified
Number of I/O: 54
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
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230+7.2 EUR
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S29GL01GS10DHI020 S29GL01GS10DHI020 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
auf Bestellung 309 Stücke:
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CY9BF129SAPMC-GK7CGE2 CY9BF129SAPMC-GK7CGE2 Infineon Technologies Description: IC MCU 32BT 1.5625MB FLSH 144QFP
DigiKey Programmable: Not Verified
Number of I/O: 122
Part Status: Active
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b; D/A 2x10b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 192K x 8
Program Memory Size: 1.5625MB (1.5625M x 8)
Speed: 60MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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S29GL01GT11FHIV43 S29GL01GT11FHIV43 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW20719B1KUMLG CYW20719B1KUMLG Infineon Technologies InfineonCYW20719B2KUMLGTDataSheetv0700EN.pdf Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 2MB ROM, 512kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 4dBm
Protocol: Bluetooth v5.0
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA ~ 20.5mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 40
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 2487 Stücke:
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10+14.35 EUR
25+13.59 EUR
100+12.54 EUR
490+11.48 EUR
980+11.07 EUR
1470+10.84 EUR
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CY25560SXI CY25560SXI Infineon Technologies Infineon-CY25560_SPREAD_SPECTRUM_CLOCK_GENERATOR-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5cf783bf3 Description: IC CLK/FREQ SYNTH 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 1
Part Status: Active
Divider/Multiplier: Yes/No
PLL: Yes
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
Differential - Input:Output: No/No
Ratio - Input:Output: 1:1
Voltage - Supply: 2.97V ~ 3.63V
Operating Temperature: -40°C ~ 85°C
Input: Clock, Crystal
Type: Clock/Frequency Synthesizer, Frequency Modulator, Spread Spectrum Clock Generator
Frequency - Max: 100MHz
Output: Clock
Mounting Type: Surface Mount
auf Bestellung 970 Stücke:
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2+19.31 EUR
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SAB-C504-2EM SAB-C504-2EM Infineon Technologies INFNS12708-1.pdf?t.download=true&u=5oefqw Description: LEGACY 8-BIT MCU
Program Memory Size: 16KB (16K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 44-QFP
Packaging: Bulk
Number of I/O: 32
Part Status: Active
Supplier Device Package: P-MQFP-44
Peripherals: POR, PWM, WDT
Connectivity: UART/USART
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b SAR
Core Processor: C500
Program Memory Type: OTP
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 512 x 8
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SABC5042EM SABC5042EM Infineon Technologies INFNS12708-1.pdf?t.download=true&u=5oefqw Description: LEGACY 8-BIT MCU
Number of I/O: 32
Part Status: Active
Supplier Device Package: P-MQFP-44
Peripherals: POR, PWM, WDT
Connectivity: UART/USART
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b SAR
Core Processor: C500
Program Memory Type: OTP
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 512 x 8
Program Memory Size: 16KB (16K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 44-QFP
Packaging: Bulk
Produkt ist nicht verfügbar
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CY8C6347FMI-BLD43T CY8C6347FMI-BLD43T Infineon Technologies infineon-psoc-6-mcu-cy8c63x6-cy8c63x7-datasheet-psoc-63-mcu-with-bluetooth-le-datasheet-en.pdf Description: IC MCU 32BIT 1MB FLASH 104WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 104-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4/M0
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 104-WLCSP (3.8x5)
Part Status: Active
Number of I/O: 70
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C6347BZI-BLD43 CY8C6347BZI-BLD43 Infineon Technologies infineon-psoc-6-mcu-cy8c63x6-cy8c63x7-datasheet-psoc-63-mcu-with-bluetooth-le-datasheet-en.pdf Description: IC MCU 32BIT 1MB FLASH 116BGA
Packaging: Tray
Package / Case: 116-WFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4/M0
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 116-BGA (5.2x6.4)
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S70GL02GS11FHI010 S70GL02GS11FHI010 Infineon Technologies Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 16
DigiKey Programmable: Verified
auf Bestellung 720 Stücke:
Lieferzeit 10-14 Tag (e)
1+81.07 EUR
10+75.01 EUR
25+72.6 EUR
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S70GL02GS11FHI020 S70GL02GS11FHI020 Infineon Technologies Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 16
DigiKey Programmable: Verified
auf Bestellung 1230 Stücke:
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10+75.01 EUR
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S70GL02GS11FHB010 S70GL02GS11FHB010 Infineon Technologies Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74 Description: IC FLASH 2GBIT CFI 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S70FS01GSAGMFI010 S70FS01GSAGMFI010 Infineon Technologies Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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1+36.19 EUR
10+33.56 EUR
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50+31.73 EUR
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480+29.21 EUR
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S70FS01GSAGMFV011 S70FS01GSAGMFV011 Infineon Technologies Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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S29GL256S90TFI020 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL256S90TFI020
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1797 Stücke:
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AnzahlPrivatkunde
2+20.29 EUR
10+18.86 EUR
25+18.28 EUR
91+17.47 EUR
182+17.04 EUR
273+16.79 EUR
546+16.36 EUR
1001+16.01 EUR
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S29GL256S90FHI023 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL256S90FHI023
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPD40DP06NMATMA1 Infineon-IPD40DP06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0667894e724f
IPD40DP06NMATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 4.3A TO252-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4V @ 166µA
Power Dissipation (Max): 19W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar
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IPD40DP06NMATMA1 Infineon-IPD40DP06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0667894e724f
IPD40DP06NMATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 4.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4V @ 166µA
Power Dissipation (Max): 19W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1439 Stücke:
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AnzahlPrivatkunde
10+2.12 EUR
16+1.32 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
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IPT022N10NF2SATMA1 Infineon-IPT022N10NF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183f00b5b7e4657
IPT022N10NF2SATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1800+2.94 EUR
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IPT022N10NF2SATMA1 Infineon-IPT022N10NF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183f00b5b7e4657
IPT022N10NF2SATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
auf Bestellung 2582 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.69 EUR
10+5.74 EUR
100+4.06 EUR
500+3.49 EUR
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IPT017N10NF2SATMA1 Infineon-IPT017N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183ef8585e621b3
IPT017N10NF2SATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 294A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 216µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9300 pF @ 50 V
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1800+3.28 EUR
3600+3.22 EUR
Mindestbestellmenge: 1800 Stücke
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IPT017N10NF2SATMA1 Infineon-IPT017N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183ef8585e621b3
IPT017N10NF2SATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 294A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 216µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9300 pF @ 50 V
auf Bestellung 4615 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.53 EUR
10+6.32 EUR
100+4.5 EUR
500+3.95 EUR
Mindestbestellmenge: 3 Stücke
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IPF024N10NF2SATMA1 Infineon-IPF024N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f45eff876221
IPF024N10NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 227A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO263-7-14
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+2.63 EUR
Mindestbestellmenge: 800 Stücke
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IPF024N10NF2SATMA1 Infineon-IPF024N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f45eff876221
IPF024N10NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 227A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO263-7-14
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
auf Bestellung 1293 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.38 EUR
10+4.83 EUR
100+3.38 EUR
Mindestbestellmenge: 3 Stücke
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IPB026N10NF2SATMA1 Infineon-IPB026N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4c3afb01b06
IPB026N10NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+3.49 EUR
1600+3.26 EUR
Mindestbestellmenge: 800 Stücke
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IPB026N10NF2SATMA1 Infineon-IPB026N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4c3afb01b06
IPB026N10NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
auf Bestellung 1845 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.4 EUR
10+6.22 EUR
100+4.43 EUR
Mindestbestellmenge: 3 Stücke
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IPF016N10NF2SATMA1 Infineon-IPF016N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f3f130b05e8a
IPF016N10NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 274A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-TO263-7-14
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+3.39 EUR
1600+3.18 EUR
2400+3.07 EUR
Mindestbestellmenge: 800 Stücke
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IPF016N10NF2SATMA1 Infineon-IPF016N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f3f130b05e8a
IPF016N10NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 274A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-TO263-7-14
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.2 EUR
10+6.08 EUR
100+4.32 EUR
Mindestbestellmenge: 3 Stücke
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IPB050N10NF2SATMA1 Infineon-IPB050N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc12431b1b
IPB050N10NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 5.05mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IPB050N10NF2SATMA1 Infineon-IPB050N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc12431b1b
IPB050N10NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 5.05mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 548 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.53 EUR
10+2.48 EUR
100+1.73 EUR
Mindestbestellmenge: 6 Stücke
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BC857BE6433HTMA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC857BE6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 40000 Stücke
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BC 857BF E6327 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC 857BF E6327
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-TSFP-3-1
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: PG-TSFP-3-1
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 36000 Stücke
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IDP04E120XKSA1 INFNS14025-1.pdf?t.download=true&u=5oefqw
IDP04E120XKSA1
Hersteller: Infineon Technologies
Description: DIODE STD 1200V 11.2A PGTO22021
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 11.2A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 4 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 4489 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
289+1.88 EUR
Mindestbestellmenge: 289 Stücke
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CY91F524BSDPMC1-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 26x12b SAR; D/A 1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 44
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW20721B1KUMLG Infineon-CYW20721_Enhanced_Low_Power_BR_EDR_BLE_Bluetooth_5.0_SOC_for_Audio-AdditionalTechnicalInformation-v06_00-EN.pdf?fileId=8ac78c8c7e7124d1017ebeab5c8a566e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe
CYW20721B1KUMLG
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 1MB Flash, 512kB RAM, 2MB ROM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5dBm
Protocol: Bluetooth v5.1 + EDR
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 8DPSK, 8PSK, DQPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, PCM, PDM, SPI, UART
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 4866 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+23.01 EUR
10+17.9 EUR
25+16.36 EUR
80+14.73 EUR
230+13.54 EUR
490+12.83 EUR
980+12.26 EUR
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CYBLE-202007-01 Infineon-CYBLE-212006-01_CYBLE-202007-01_CYBLE-202013-11_EZ-BLE_Creator_XR_Module-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee303b069f4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
CYBLE-202007-01
Hersteller: Infineon Technologies
Description: RF TXRX MOD BT TH SMD
Packaging: Tape & Reel (TR)
Package / Case: 30-SMD Module
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 4.5V
Power - Output: 7.5dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA
Current - Transmitting: 27mA
Antenna Type: Integrated, Trace
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
500+20.66 EUR
Mindestbestellmenge: 500 Stücke
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CYBLE-202007-01 Infineon-CYBLE-212006-01_CYBLE-202007-01_CYBLE-202013-11_EZ-BLE_Creator_XR_Module-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee303b069f4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
CYBLE-202007-01
Hersteller: Infineon Technologies
Description: RF TXRX MOD BT TH SMD
Packaging: Cut Tape (CT)
Package / Case: 30-SMD Module
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 4.5V
Power - Output: 7.5dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA
Current - Transmitting: 27mA
Antenna Type: Integrated, Trace
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1045 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+29.46 EUR
10+25.66 EUR
25+24.32 EUR
100+22.51 EUR
250+21.43 EUR
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CY7C131-55NXC CY7C130,131(A).pdf
CY7C131-55NXC
Hersteller: Infineon Technologies
Description: IC SRAM 8KBIT PARALLEL 52PQFP
Produkt ist nicht verfügbar
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CY7C131-55JXC CY7C130,131(A).pdf
CY7C131-55JXC
Hersteller: Infineon Technologies
Description: IC SRAM 8KBIT PARALLEL 52PLCC
Produkt ist nicht verfügbar
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STK12C68-SF25I download
STK12C68-SF25I
Hersteller: Infineon Technologies
Description: IC NVSRAM 64KBIT PARALLEL 28SOIC
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 28-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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DDB6U50N16W1RPBPSA1 Infineon-DDB6U50N16W1RP-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c7fb5929e017fc0ce29bd04ad
DDB6U50N16W1RPBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 50A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Single Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 6.2 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+80.66 EUR
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TD250N16KOFAHPSA1
TD250N16KOFAHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 410A MODULE
Produkt ist nicht verfügbar
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D1050N16TXPSA1 D1050N.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.6KV 1050A
Produkt ist nicht verfügbar
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DT250N16KOFHPSA1 TT250N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV MODULE
Voltage - Off State: 1.6 kV
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 250 A
Number of SCRs, Diodes: 2 SCRs
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Produkt ist nicht verfügbar
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TLE8880TN
Hersteller: Infineon Technologies
Description: TLE8880 - ALTERNATOR REGULATOR
Part Status: Active
Supplier Device Package: PG-TO220-5-12
Applications: Converter, Automotive Engine Control
Operating Temperature: -40°C ~ 175°C
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Bulk
Produkt ist nicht verfügbar
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TLE8881TNAKSA1 Infineon-TLE8880_PB-ProductBrief-v01_01-EN.pdf?fileId=5546d461454603990145b2e11f484ec6
TLE8881TNAKSA1
Hersteller: Infineon Technologies
Description: ALTERNATOR_IC
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: PG-TO220-5-12
Applications: Converter, Automotive Engine Control
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Input: 6V ~ 18V
Number of Outputs: 1
Mounting Type: Through Hole
Voltage - Output: 12V
Package / Case: TO-220-5
Packaging: Tube
Produkt ist nicht verfügbar
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TLE88812TN2AKSA1 Infineon-TLE8881-2-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d5d74fb3a0492
TLE88812TN2AKSA1
Hersteller: Infineon Technologies
Description: ALTERNATOR_REGULATOR_ICS PG-TO22
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Supplier Device Package: PG-TO220-5-12
Applications: Alternator
Operating Temperature: -40°C ~ 175°C
Voltage - Input: 10.6V ~ 16V
Number of Outputs: 1
Mounting Type: Through Hole
Voltage - Output: 12V
Package / Case: TO-220-5
Packaging: Tube
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1+24.11 EUR
10+22.16 EUR
50+21.23 EUR
100+18.71 EUR
250+17.79 EUR
500+16.65 EUR
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IPD06P005NSAUMA1
IPD06P005NSAUMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 6.5A TO252-3
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Produkt ist nicht verfügbar
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IPD06P002NSAUMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 35A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
Produkt ist nicht verfügbar
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IRF3546MTRPBF irf3546m.pdf?fileId=5546d462533600a4015355df3145191e
IRF3546MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET 4N-CH 25V 16A 41QFN
Packaging: Tape & Reel (TR)
Package / Case: 41-PowerVFQFN
Mounting Type: Surface Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 13V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: 41-PQFN (6x8)
Part Status: Obsolete
Produkt ist nicht verfügbar
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S25HL01GTDPBHM030 Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_Flash_Quad_SPI_1.8V_3.0V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f1a4242c57
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 24FBGA
Produkt ist nicht verfügbar
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CYT3BB5CEBQ0AESGST Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342
CYT3BB5CEBQ0AESGST
Hersteller: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 100QFP
RAM Size: 768K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 100MHz, 250MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Core Size: 32-Bit Dual-Core
Data Converters: A/D 55x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
Number of I/O: 72
Part Status: Active
Supplier Device Package: 100-TEQFP (14x14)
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR38060MTRPBF reference-design-irdc38060-5546d462533600a4015364c4513f29f8
IR38060MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 6A 35PQFN
Packaging: Cut Tape (CT)
Package / Case: 35-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 35-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.38V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
auf Bestellung 11377 Stücke:
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3+7.25 EUR
10+5.47 EUR
25+5.03 EUR
100+4.56 EUR
250+4.32 EUR
500+4.18 EUR
1000+4.07 EUR
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IRFS4115PBF description irfs4115pbf.pdf?fileId=5546d462533600a401535636e5d2218f
IRFS4115PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 62A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
Produkt ist nicht verfügbar
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CY8C201A0-LDX2I ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C201A0-LDX2I
Hersteller: Infineon Technologies
Description: IC CAPSENSE EXP 10 I/O 16QFN
DigiKey Programmable: Not Verified
LED Driver Channels: Up to 5
Proximity Detection: No
Supplier Device Package: 16-QFN (3x3)
Number of Inputs: Up to 6
Current - Supply: 1.5mA
Voltage - Supply: 2.4V ~ 5.25V
Operating Temperature: -40°C ~ 85°C
Type: Buttons, Slider
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tray
Produkt ist nicht verfügbar
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CYW43439KUBGT CYW43439KUBGT.pdf
CYW43439KUBGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 63WLBGA
DigiKey Programmable: Not Verified
GPIO: 5
Supplier Device Package: 63-WLBGA (2.87x4.87)
Current - Transmitting: 271mA ~ 320mA
Data Rate (Max): 4Mbps
Current - Receiving: 37mA ~ 43mA
Protocol: 802.11a/b/g/n, Bluetooth v5.2 + EDR, Class 1, 2
Power - Output: 10dBm
Voltage - Supply: 3V ~ 4.8V
Operating Temperature: -30°C ~ 70°C (TA)
Type: TxRx + MCU
Memory Size: 512kB SRAM, 640kB ROM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Part Status: Active
Serial Interfaces: GPIO, JTAG, SDIO, SPI, UART
RF Family/Standard: Bluetooth, WiFi
Modulation: 8-DPSK, 64-QAM, 8-DQPSK, CCK, DSSS, GFSK, OFDM
Sensitivity: -99.5dBm
Package / Case: 63-UFBGA, WLBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CYW43439KUBGT CYW43439KUBGT.pdf
CYW43439KUBGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 63WLBGA
DigiKey Programmable: Not Verified
Part Status: Active
Type: TxRx + MCU
Memory Size: 512kB SRAM, 640kB ROM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -99.5dBm
Package / Case: 63-UFBGA, WLBGA
Packaging: Cut Tape (CT)
Serial Interfaces: GPIO, JTAG, SDIO, SPI, UART
RF Family/Standard: Bluetooth, WiFi
Modulation: 8-DPSK, 64-QAM, 8-DQPSK, CCK, DSSS, GFSK, OFDM
GPIO: 5
Supplier Device Package: 63-WLBGA (2.87x4.87)
Current - Transmitting: 271mA ~ 320mA
Data Rate (Max): 4Mbps
Current - Receiving: 37mA ~ 43mA
Protocol: 802.11a/b/g/n, Bluetooth v5.2 + EDR, Class 1, 2
Power - Output: 10dBm
Voltage - Supply: 3V ~ 4.8V
Operating Temperature: -30°C ~ 70°C (TA)
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3+9.9 EUR
10+8.59 EUR
25+8.13 EUR
100+7.49 EUR
250+7.1 EUR
500+6.83 EUR
1000+6.58 EUR
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CYBLE-212020-01 Infineon-CYBLE-212020-01-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1d41a67e4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYBLE-212020-01
Hersteller: Infineon Technologies
Description: RF TXRX MOD BT TH SMD
Packaging: Tape & Reel (TR)
Package / Case: 31-SMD Module
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Data Rate: 8Mbps
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA
Current - Transmitting: 15.6mA
Antenna Type: Integrated, Trace
Utilized IC / Part: CYBLE-01211-00, CYBLE-212019-00
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYBLE-212020-01 Infineon-CYBLE-212020-01-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1d41a67e4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYBLE-212020-01
Hersteller: Infineon Technologies
Description: RF TXRX MOD BT TH SMD
Packaging: Cut Tape (CT)
Package / Case: 31-SMD Module
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Data Rate: 8Mbps
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA
Current - Transmitting: 15.6mA
Antenna Type: Integrated, Trace
Utilized IC / Part: CYBLE-01211-00, CYBLE-212019-00
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4147AZQ-S465 PSoC_4100S_Plus_RevH_9-14-18.pdf
CY8C4147AZQ-S465
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64TQFP
DigiKey Programmable: Not Verified
Number of I/O: 54
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
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2+11.69 EUR
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800+6.82 EUR
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S29GL01GS10DHI020 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL01GS10DHI020
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
auf Bestellung 309 Stücke:
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1+28.88 EUR
10+26.8 EUR
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50+25.34 EUR
100+24.72 EUR
260+23.86 EUR
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CY9BF129SAPMC-GK7CGE2
CY9BF129SAPMC-GK7CGE2
Hersteller: Infineon Technologies
Description: IC MCU 32BT 1.5625MB FLSH 144QFP
DigiKey Programmable: Not Verified
Number of I/O: 122
Part Status: Active
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b; D/A 2x10b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 192K x 8
Program Memory Size: 1.5625MB (1.5625M x 8)
Speed: 60MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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S29GL01GT11FHIV43 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
S29GL01GT11FHIV43
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW20719B1KUMLG InfineonCYW20719B2KUMLGTDataSheetv0700EN.pdf
CYW20719B1KUMLG
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 2MB ROM, 512kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 4dBm
Protocol: Bluetooth v5.0
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA ~ 20.5mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 40
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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2+16.54 EUR
10+14.35 EUR
25+13.59 EUR
100+12.54 EUR
490+11.48 EUR
980+11.07 EUR
1470+10.84 EUR
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CY25560SXI Infineon-CY25560_SPREAD_SPECTRUM_CLOCK_GENERATOR-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5cf783bf3
CY25560SXI
Hersteller: Infineon Technologies
Description: IC CLK/FREQ SYNTH 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 1
Part Status: Active
Divider/Multiplier: Yes/No
PLL: Yes
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
Differential - Input:Output: No/No
Ratio - Input:Output: 1:1
Voltage - Supply: 2.97V ~ 3.63V
Operating Temperature: -40°C ~ 85°C
Input: Clock, Crystal
Type: Clock/Frequency Synthesizer, Frequency Modulator, Spread Spectrum Clock Generator
Frequency - Max: 100MHz
Output: Clock
Mounting Type: Surface Mount
auf Bestellung 970 Stücke:
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2+19.31 EUR
10+15.17 EUR
25+14.14 EUR
100+13.58 EUR
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SAB-C504-2EM INFNS12708-1.pdf?t.download=true&u=5oefqw
SAB-C504-2EM
Hersteller: Infineon Technologies
Description: LEGACY 8-BIT MCU
Program Memory Size: 16KB (16K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 44-QFP
Packaging: Bulk
Number of I/O: 32
Part Status: Active
Supplier Device Package: P-MQFP-44
Peripherals: POR, PWM, WDT
Connectivity: UART/USART
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b SAR
Core Processor: C500
Program Memory Type: OTP
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 512 x 8
Produkt ist nicht verfügbar
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SABC5042EM INFNS12708-1.pdf?t.download=true&u=5oefqw
SABC5042EM
Hersteller: Infineon Technologies
Description: LEGACY 8-BIT MCU
Number of I/O: 32
Part Status: Active
Supplier Device Package: P-MQFP-44
Peripherals: POR, PWM, WDT
Connectivity: UART/USART
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b SAR
Core Processor: C500
Program Memory Type: OTP
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 512 x 8
Program Memory Size: 16KB (16K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 44-QFP
Packaging: Bulk
Produkt ist nicht verfügbar
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CY8C6347FMI-BLD43T infineon-psoc-6-mcu-cy8c63x6-cy8c63x7-datasheet-psoc-63-mcu-with-bluetooth-le-datasheet-en.pdf
CY8C6347FMI-BLD43T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 104WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 104-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4/M0
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 104-WLCSP (3.8x5)
Part Status: Active
Number of I/O: 70
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1700 Stücke
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CY8C6347BZI-BLD43 infineon-psoc-6-mcu-cy8c63x6-cy8c63x7-datasheet-psoc-63-mcu-with-bluetooth-le-datasheet-en.pdf
CY8C6347BZI-BLD43
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 116BGA
Packaging: Tray
Package / Case: 116-WFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4/M0
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 116-BGA (5.2x6.4)
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 3640 Stücke
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S70GL02GS11FHI010 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70GL02GS11FHI010
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 16
DigiKey Programmable: Verified
auf Bestellung 720 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+81.07 EUR
10+75.01 EUR
25+72.6 EUR
50+70.8 EUR
180+67.54 EUR
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS11FHI020 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70GL02GS11FHI020
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 16
DigiKey Programmable: Verified
auf Bestellung 1230 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+81.07 EUR
10+75.01 EUR
25+72.6 EUR
50+70.8 EUR
180+67.54 EUR
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS11FHB010 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74
S70GL02GS11FHB010
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT CFI 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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S70FS01GSAGMFI010 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70FS01GSAGMFI010
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 960 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+36.19 EUR
10+33.56 EUR
25+32.51 EUR
50+31.73 EUR
240+29.96 EUR
480+29.21 EUR
Im Einkaufswagen  Stück im Wert von  UAH
S70FS01GSAGMFV011 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70FS01GSAGMFV011
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 235 Stücke
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