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S29GL128P10FFI022 S29GL128P10FFI022 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL128P11FAI010 S29GL128P11FAI010 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 330 Stücke:
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2+10.4 EUR
10+9.68 EUR
25+9.39 EUR
50+9.17 EUR
100+8.94 EUR
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S29GL128P10TFI023 S29GL128P10TFI023 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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S29GL128P10TFI023 S29GL128P10TFI023 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Cut Tape (CT)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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S29GL128P11FFI010 S29GL128P11FFI010 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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S70FL01GSDSMFB013 S70FL01GSDSMFB013 Infineon Technologies Infineon-S70FL01GS_1_Gbit_(128_Mbyte)_3.0V_SPI_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edb3adf5e12&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_2_3_1 Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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S70FL01GSDSMFB013 S70FL01GSDSMFB013 Infineon Technologies Infineon-S70FL01GS_1_Gbit_(128_Mbyte)_3.0V_SPI_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edb3adf5e12&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_2_3_1 Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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10+23.43 EUR
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50+22.14 EUR
100+21.59 EUR
250+21.4 EUR
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BTS142DAKSA1 BTS142DAKSA1 Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tube
Features: Auto Restart
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 23mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
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SAF82526HV2.1-HSCX-1 Infineon Technologies Description: SERIAL COMMUNICATION CONTROLLER
Packaging: Bulk
Part Status: Active
auf Bestellung 230 Stücke:
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42+12.62 EUR
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S6AP412AF8GN1C000 S6AP412AF8GN1C000 Infineon Technologies download Description: IC REG BUCK BST TRPL 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 3
Function: Step-Down, Step-Up/Step-Down
Current - Output: 4A, 1.2A, 600mA
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 3MHz
Voltage - Input (Max): 5.5V
Topology: Buck, Buck-Boost
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.2V, 1.8V, 3.3V
Part Status: Obsolete
Produkt ist nicht verfügbar
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KITDRIVER1EDN7511BTOBO1 KITDRIVER1EDN7511BTOBO1 Infineon Technologies Infineon-1EDN751x_1EDN851x_Rev%202.0-DS-v02_02-EN.pdf?fileId=5546d462576f34750157e176df0b3ca7 Description: EVAL 1EDN7511B
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDN7511B
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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1+45.16 EUR
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TLE9855QXXUMA2 TLE9855QXXUMA2 Infineon Technologies Infineon-TLE9855QX-DS-DataSheet-v01_00-EN.pdf?fileId=5546d462689a790c0169104901f03e18 Description: IC MCU 32BIT 96KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 9x8b, 12x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 5.5V ~ 28V
Connectivity: LINbus, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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2+10.3 EUR
10+9.24 EUR
25+8.73 EUR
100+7.57 EUR
250+7.18 EUR
500+6.44 EUR
1000+5.43 EUR
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BGA925L6E6327XTSA1 BGA925L6E6327XTSA1 Infineon Technologies BGA925L6.pdf Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.8dB
Current - Supply: 4.8mA
Noise Figure: 0.65dB
P1dB: -8dBm
Supplier Device Package: TSLP-6-2
Part Status: Obsolete
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1268+0.4 EUR
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CY9BF466NPMC-G-MNE2 CY9BF466NPMC-G-MNE2 Infineon Technologies Infineon-CY9B460R_Series_32-bit_Arm_Cortex_-MF4_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c81fb7ad201821501ca6c7d04 Description: IC MCU 32BIT 544KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 80
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPP21N50C3XKSA1 SPP21N50C3XKSA1 Infineon Technologies SPx21N50C3.pdf Description: MOSFET N-CH 500V 21A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 80 Stücke:
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3+6.41 EUR
50+3.28 EUR
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SPI21N50C3XKSA1 SPI21N50C3XKSA1 Infineon Technologies SPP_I_A21N50C3_Rev[1].3.0.pdf?folderId=db3a3043163797a6011637e7be4f0060&fileId=db3a3043163797a6011637eeb9340085 Description: MOSFET N-CH 560V 21A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 840 Stücke:
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100+2.98 EUR
500+2.45 EUR
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IPP076N15N5AKSA1 IPP076N15N5AKSA1 Infineon Technologies Infineon-IPP076N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a04c9f955516 Description: MOSFET N-CH 150V 112A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 56A, 10
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 160µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Produkt ist nicht verfügbar
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A2C04189900 Infineon Technologies Description: IC MCU 32BIT 144LQFP
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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PROFETONE4ALLMBV1TOBO1 PROFETONE4ALLMBV1TOBO1 Infineon Technologies Infineon-Infineon-Z8F80147930_PROFET_Evaluation_kit_description-AN-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181c841d78504bb Description: PROFET MOTHERBOARD
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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1+332.55 EUR
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SP3680P1228MAC-10K Infineon Technologies Description: UT-REALOS/M3 FOR RVDS
Packaging: Tray
Type: License
Part Status: Obsolete
Produkt ist nicht verfügbar
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CYRF8935A-24LQXC CYRF8935A-24LQXC Infineon Technologies 5047 Description: IC RF TXRX ISM>1GHZ 24UFQFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Sensitivity: -87dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx Only
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 1dBm
Current - Receiving: 18mA
Data Rate (Max): 1Mbps
Current - Transmitting: 13.7mA ~ 18.5mA
Supplier Device Package: 24-QFN (4x4)
Modulation: GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
Part Status: Obsolete
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10+5.55 EUR
25+4.99 EUR
80+4.55 EUR
230+4.11 EUR
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AUIRFS8407TRL AUIRFS8407TRL Infineon Technologies auirfs8407.pdf?fileId=5546d462533600a4015355b711f614e1 Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRFS8407TRL AUIRFS8407TRL Infineon Technologies auirfs8407.pdf?fileId=5546d462533600a4015355b711f614e1 Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
auf Bestellung 290 Stücke:
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100+4.21 EUR
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AUIRFS8407-7TRL AUIRFS8407-7TRL Infineon Technologies auirfs8407-7p.pdf?fileId=5546d462533600a4015355b71d0614e5 Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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AUIRFS8407-7TRL AUIRFS8407-7TRL Infineon Technologies auirfs8407-7p.pdf?fileId=5546d462533600a4015355b71d0614e5 Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 761 Stücke:
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3+7.87 EUR
10+5.31 EUR
100+3.82 EUR
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PVT322AS-TPBF PVT322AS-TPBF Infineon Technologies IRSD-S-A0001022139-1.pdf?t.download=true&u=5oefqw Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Termination Style: Gull Wing
Load Current: 170 mA
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 8 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
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PVT322AS-TPBF PVT322AS-TPBF Infineon Technologies IRSD-S-A0001022139-1.pdf?t.download=true&u=5oefqw Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Cut Tape (CT)
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Termination Style: Gull Wing
Load Current: 170 mA
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 8 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
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25+17.53 EUR
50+16.93 EUR
100+16.35 EUR
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CY9BF512NPQC-G-JNE2 CY9BF512NPQC-G-JNE2 Infineon Technologies Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
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CY9BF512NPMC-GE1 CY9BF512NPMC-GE1 Infineon Technologies Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 83
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FZ3600R17HP4B2BOSA2 FZ3600R17HP4B2BOSA2 Infineon Technologies Infineon-FZ3600R17HP4_B2-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527e85a7a06d26 Description: IGBT MODULE 1700V 3600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 3.6kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 3600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4900000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 295 nF @ 25 V
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CY62138FV30LL-45BVXI CY62138FV30LL-45BVXI Infineon Technologies Infineon-CY62138FV30_MoBL_2-Mbit_(256_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea2bb3263&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 2MBIT PARALLEL 36VFBGA
Packaging: Tray
Package / Case: 36-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
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CY62138FV30LL-45BVXIT CY62138FV30LL-45BVXIT Infineon Technologies Infineon-CY62138FV30_MoBL_2-Mbit_(256_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea2bb3263&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 2MBIT PARALLEL 36VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 36-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
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IGP30N65F5XKSA1 IGP30N65F5XKSA1 Infineon Technologies Infineon-IGP30N65F5-DS-v02_02-EN.pdf?fileId=5546d461464245d30146a4cd88ff6cbf Description: IGBT TRENCH 650V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/170ns
Switching Energy: 280µJ (on), 70µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
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IKP30N65F5XKSA1 IKP30N65F5XKSA1 Infineon Technologies Infineon-IKP30N65F5-DS-v02_02-EN.pdf?fileId=5546d461464245d30146a51147116d12 Description: IGBT TRENCH 650V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/170ns
Switching Energy: 280µJ (on), 70µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
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IPB160N04S4LH1ATMA1 IPB160N04S4LH1ATMA1 Infineon Technologies Infineon-IPB160N04S4LH110-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f0ac006489 Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 110µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPB160N04S4LH1ATMA1 IPB160N04S4LH1ATMA1 Infineon Technologies Infineon-IPB160N04S4LH110-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f0ac006489 Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 110µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPB160N04S2L03ATMA2 IPB160N04S2L03ATMA2 Infineon Technologies Infineon-IPB160N04S2L_03-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b99f14568 Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-7-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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TT92N16KOFHPSA1 TT92N16KOFHPSA1 Infineon Technologies TT92N.pdf Description: SCR MODULE 1.6KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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CY7B9945V-2AXI CY7B9945V-2AXI Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLK BUFF 52TQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Output: LVTTL
Frequency - Max: 200MHz
Type: Clock Buffer, Fanout Distribution
Input: LVPECL, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 4:10
Differential - Input:Output: Yes/No
Supplier Device Package: 52-TQFP (10x10)
PLL: Yes
Divider/Multiplier: Yes/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY7B9945V-2AXC CY7B9945V-2AXC Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLK BUFF 11OUT 200MHZ 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Output: LVTTL
Frequency - Max: 200MHz
Type: Clock Buffer, Fanout Distribution
Input: LVPECL, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 4:10
Differential - Input:Output: Yes/No
Supplier Device Package: 52-TQFP (10x10)
PLL: Yes
Divider/Multiplier: Yes/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FS064SDSMFM013 S25FS064SDSMFM013 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MB89567APMC1-G-263E1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MCU 8BIT 32KB MROM 80LQFP
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 50
DigiKey Programmable: Not Verified
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MB89485-G-263-CHIP-CN Infineon Technologies Description: IC MCU 8BIT 16KB MROM
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 39
Produkt ist nicht verfügbar
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MB95F263HPFT-G-SNE2 Infineon Technologies MB95260H_70H_80H_Series_RevA_Apr4_2016.pdf Description: IC ANALOG
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 20-TSSOP
Part Status: Obsolete
Number of I/O: 16
Produkt ist nicht verfügbar
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MB89935BPFV-G-263BNDERE1 Infineon Technologies Description: IC MCU 8BIT 16KB MROM 30SSOP
Packaging: Tape & Reel (TR)
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 30-SSOP
Part Status: Obsolete
Number of I/O: 21
Produkt ist nicht verfügbar
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MB95F263KPFT-G-SNE2 MB95F263KPFT-G-SNE2 Infineon Technologies MB95260H_70H_80H_Series_RevA_Apr4_2016.pdf Description: IC MCU 8BIT 12KB FLASH 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-TSSOP
Part Status: Obsolete
Number of I/O: 17
DigiKey Programmable: Not Verified
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MB95F263KPF-G-SNERE2 Infineon Technologies Description: IC ANALOG
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-SOP
Part Status: Obsolete
Number of I/O: 17
Produkt ist nicht verfügbar
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MB89935BPFV-G-263-ERE1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MCU 8BIT 16KB MROM 30SSOP
Packaging: Tray
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 30-SSOP
Part Status: Obsolete
Number of I/O: 21
Produkt ist nicht verfügbar
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CY96F683ABPMC-GS-UJE1 CY96F683ABPMC-GS-UJE1 Infineon Technologies Infineon-CY96680_Series_F2MC-16FX_16_Bit_Microcontroller-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edca5f36099&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration Description: IC MCU 16BIT 96KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 14x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I²C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 65
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PSB4451RV1.2 PSB4451RV1.2 Infineon Technologies PSB4450-51.pdf?t.download=true&u=ovmfp3 Description: ANIC ANALOG NETWORK INTERFACE CI
Packaging: Bulk
Part Status: Active
auf Bestellung 3000 Stücke:
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52+9.42 EUR
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PSB4450RV1.2 PSB4450RV1.2 Infineon Technologies PSB4450-51.pdf?t.download=true&u=ovmfp3 Description: ANIC ANALOG NETWORK INTERFACE CI
Packaging: Bulk
Part Status: Active
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
55+8.95 EUR
Mindestbestellmenge: 55
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IPB60R280P6ATMA1 IPB60R280P6ATMA1 Infineon Technologies Infineon-IPX60R280P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e269e3e0021 Description: MOSFET N-CH 600V 13.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
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IPB60R280P6ATMA1 IPB60R280P6ATMA1 Infineon Technologies Infineon-IPX60R280P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e269e3e0021 Description: MOSFET N-CH 600V 13.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
auf Bestellung 982 Stücke:
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5+3.92 EUR
10+2.78 EUR
100+1.91 EUR
500+1.56 EUR
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IDH16G65C6XKSA1 IDH16G65C6XKSA1 Infineon Technologies Infineon-IDH16G65C6-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce39244070531 Description: DIODE SIL CARB 650V 34A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 783pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 16 A
Current - Reverse Leakage @ Vr: 53 µA @ 420 V
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2+9.13 EUR
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1000+3.53 EUR
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IRFC5210B Infineon Technologies Description: MOSFET 100V 40A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 60mOhm @ 40A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar
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BCR148SH6327XTSA1 BCR148SH6327XTSA1 Infineon Technologies bcr148series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440144ad602b8 Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 100MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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BCR148E6433HTMA1 BCR148E6433HTMA1 Infineon Technologies bcr148series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440144ad602b8 Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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BCR148SH6433XTMA1 BCR148SH6433XTMA1 Infineon Technologies bcr148series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440144ad602b8 Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 100MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Discontinued at Digi-Key
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IPP90R1K2C3XKSA2 IPP90R1K2C3XKSA2 Infineon Technologies Infineon-IPP90R1K2C3-DS-v01_00-en.pdf?fileId=db3a30432313ff5e0123a89fe8085c04 Description: MOSFET N-CH 900V 5.1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO220-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Produkt ist nicht verfügbar
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FM4-176L-S6E2GM FM4-176L-S6E2GM Infineon Technologies Infineon-FM4_S6E2G-Series_Pioneer_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efa798e105a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: S6E2GM EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M4F
Board Type: Evaluation Platform
Utilized IC / Part: S6E2GM
Part Status: Active
auf Bestellung 11 Stücke:
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1+81.66 EUR
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S29GL128P10FFI022 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P10FFI022
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S29GL128P11FAI010 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P11FAI010
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 330 Stücke:
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Anzahl Preis
2+10.4 EUR
10+9.68 EUR
25+9.39 EUR
50+9.17 EUR
100+8.94 EUR
Mindestbestellmenge: 2
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S29GL128P10TFI023 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P10TFI023
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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S29GL128P10TFI023 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P10TFI023
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Cut Tape (CT)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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S29GL128P11FFI010 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P11FFI010
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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S70FL01GSDSMFB013 Infineon-S70FL01GS_1_Gbit_(128_Mbyte)_3.0V_SPI_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edb3adf5e12&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_2_3_1
S70FL01GSDSMFB013
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S70FL01GSDSMFB013 Infineon-S70FL01GS_1_Gbit_(128_Mbyte)_3.0V_SPI_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edb3adf5e12&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_2_3_1
S70FL01GSDSMFB013
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1373 Stücke:
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1+25.27 EUR
10+23.43 EUR
25+22.69 EUR
50+22.14 EUR
100+21.59 EUR
250+21.4 EUR
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BTS142DAKSA1
BTS142DAKSA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tube
Features: Auto Restart
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 23mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
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SAF82526HV2.1-HSCX-1
Hersteller: Infineon Technologies
Description: SERIAL COMMUNICATION CONTROLLER
Packaging: Bulk
Part Status: Active
auf Bestellung 230 Stücke:
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Anzahl Preis
42+12.62 EUR
Mindestbestellmenge: 42
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S6AP412AF8GN1C000 download
S6AP412AF8GN1C000
Hersteller: Infineon Technologies
Description: IC REG BUCK BST TRPL 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 3
Function: Step-Down, Step-Up/Step-Down
Current - Output: 4A, 1.2A, 600mA
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 3MHz
Voltage - Input (Max): 5.5V
Topology: Buck, Buck-Boost
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.2V, 1.8V, 3.3V
Part Status: Obsolete
Produkt ist nicht verfügbar
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KITDRIVER1EDN7511BTOBO1 Infineon-1EDN751x_1EDN851x_Rev%202.0-DS-v02_02-EN.pdf?fileId=5546d462576f34750157e176df0b3ca7
KITDRIVER1EDN7511BTOBO1
Hersteller: Infineon Technologies
Description: EVAL 1EDN7511B
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDN7511B
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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Anzahl Preis
1+45.16 EUR
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TLE9855QXXUMA2 Infineon-TLE9855QX-DS-DataSheet-v01_00-EN.pdf?fileId=5546d462689a790c0169104901f03e18
TLE9855QXXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 9x8b, 12x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 5.5V ~ 28V
Connectivity: LINbus, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
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Anzahl Preis
2+10.3 EUR
10+9.24 EUR
25+8.73 EUR
100+7.57 EUR
250+7.18 EUR
500+6.44 EUR
1000+5.43 EUR
Mindestbestellmenge: 2
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BGA925L6E6327XTSA1 BGA925L6.pdf
BGA925L6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.8dB
Current - Supply: 4.8mA
Noise Figure: 0.65dB
P1dB: -8dBm
Supplier Device Package: TSLP-6-2
Part Status: Obsolete
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
1268+0.4 EUR
Mindestbestellmenge: 1268
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CY9BF466NPMC-G-MNE2 Infineon-CY9B460R_Series_32-bit_Arm_Cortex_-MF4_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c81fb7ad201821501ca6c7d04
CY9BF466NPMC-G-MNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 80
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPP21N50C3XKSA1 SPx21N50C3.pdf
SPP21N50C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 21A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.41 EUR
50+3.28 EUR
Mindestbestellmenge: 3
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SPI21N50C3XKSA1 SPP_I_A21N50C3_Rev[1].3.0.pdf?folderId=db3a3043163797a6011637e7be4f0060&fileId=db3a3043163797a6011637eeb9340085
SPI21N50C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 21A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.41 EUR
50+3.28 EUR
100+2.98 EUR
500+2.45 EUR
Mindestbestellmenge: 3
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IPP076N15N5AKSA1 Infineon-IPP076N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a04c9f955516
IPP076N15N5AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 112A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 56A, 10
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 160µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Produkt ist nicht verfügbar
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A2C04189900
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 144LQFP
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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PROFETONE4ALLMBV1TOBO1 Infineon-Infineon-Z8F80147930_PROFET_Evaluation_kit_description-AN-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181c841d78504bb
PROFETONE4ALLMBV1TOBO1
Hersteller: Infineon Technologies
Description: PROFET MOTHERBOARD
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+332.55 EUR
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SP3680P1228MAC-10K
Hersteller: Infineon Technologies
Description: UT-REALOS/M3 FOR RVDS
Packaging: Tray
Type: License
Part Status: Obsolete
Produkt ist nicht verfügbar
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CYRF8935A-24LQXC 5047
CYRF8935A-24LQXC
Hersteller: Infineon Technologies
Description: IC RF TXRX ISM>1GHZ 24UFQFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Sensitivity: -87dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx Only
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 1dBm
Current - Receiving: 18mA
Data Rate (Max): 1Mbps
Current - Transmitting: 13.7mA ~ 18.5mA
Supplier Device Package: 24-QFN (4x4)
Modulation: GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
Part Status: Obsolete
auf Bestellung 477 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.21 EUR
10+5.55 EUR
25+4.99 EUR
80+4.55 EUR
230+4.11 EUR
Mindestbestellmenge: 3
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AUIRFS8407TRL auirfs8407.pdf?fileId=5546d462533600a4015355b711f614e1
AUIRFS8407TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRFS8407TRL auirfs8407.pdf?fileId=5546d462533600a4015355b711f614e1
AUIRFS8407TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.84 EUR
10+5.88 EUR
100+4.21 EUR
Mindestbestellmenge: 2
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AUIRFS8407-7TRL auirfs8407-7p.pdf?fileId=5546d462533600a4015355b71d0614e5
AUIRFS8407-7TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFS8407-7TRL auirfs8407-7p.pdf?fileId=5546d462533600a4015355b71d0614e5
AUIRFS8407-7TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 761 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.87 EUR
10+5.31 EUR
100+3.82 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
PVT322AS-TPBF IRSD-S-A0001022139-1.pdf?t.download=true&u=5oefqw
PVT322AS-TPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Termination Style: Gull Wing
Load Current: 170 mA
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 8 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Produkt ist nicht verfügbar
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PVT322AS-TPBF IRSD-S-A0001022139-1.pdf?t.download=true&u=5oefqw
PVT322AS-TPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Cut Tape (CT)
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Termination Style: Gull Wing
Load Current: 170 mA
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 8 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
auf Bestellung 326 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.61 EUR
10+18.36 EUR
25+17.53 EUR
50+16.93 EUR
100+16.35 EUR
250+15.61 EUR
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CY9BF512NPQC-G-JNE2 Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF512NPQC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF512NPMC-GE1 Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c
CY9BF512NPMC-GE1
Hersteller: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 83
Produkt ist nicht verfügbar
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FZ3600R17HP4B2BOSA2 Infineon-FZ3600R17HP4_B2-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527e85a7a06d26
FZ3600R17HP4B2BOSA2
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 3600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 3.6kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 3600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4900000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 295 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2524.09 EUR
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CY62138FV30LL-45BVXI Infineon-CY62138FV30_MoBL_2-Mbit_(256_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea2bb3263&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62138FV30LL-45BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 36VFBGA
Packaging: Tray
Package / Case: 36-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62138FV30LL-45BVXIT Infineon-CY62138FV30_MoBL_2-Mbit_(256_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea2bb3263&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62138FV30LL-45BVXIT
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 36VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 36-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IGP30N65F5XKSA1 Infineon-IGP30N65F5-DS-v02_02-EN.pdf?fileId=5546d461464245d30146a4cd88ff6cbf
IGP30N65F5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/170ns
Switching Energy: 280µJ (on), 70µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
auf Bestellung 394 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.65 EUR
50+2.83 EUR
100+2.56 EUR
Mindestbestellmenge: 4
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IKP30N65F5XKSA1 Infineon-IKP30N65F5-DS-v02_02-EN.pdf?fileId=5546d461464245d30146a51147116d12
IKP30N65F5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/170ns
Switching Energy: 280µJ (on), 70µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
auf Bestellung 481 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.08 EUR
50+3.62 EUR
100+3.28 EUR
Mindestbestellmenge: 3
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IPB160N04S4LH1ATMA1 Infineon-IPB160N04S4LH110-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f0ac006489
IPB160N04S4LH1ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 110µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.63 EUR
Mindestbestellmenge: 1000
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IPB160N04S4LH1ATMA1 Infineon-IPB160N04S4LH110-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f0ac006489
IPB160N04S4LH1ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 110µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.4 EUR
10+3.05 EUR
100+2.27 EUR
500+1.96 EUR
Mindestbestellmenge: 4
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IPB160N04S2L03ATMA2 Infineon-IPB160N04S2L_03-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b99f14568
IPB160N04S2L03ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-7-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TT92N16KOFHPSA1 TT92N.pdf
TT92N16KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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CY7B9945V-2AXI ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7B9945V-2AXI
Hersteller: Infineon Technologies
Description: IC CLK BUFF 52TQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Output: LVTTL
Frequency - Max: 200MHz
Type: Clock Buffer, Fanout Distribution
Input: LVPECL, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 4:10
Differential - Input:Output: Yes/No
Supplier Device Package: 52-TQFP (10x10)
PLL: Yes
Divider/Multiplier: Yes/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7B9945V-2AXC ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7B9945V-2AXC
Hersteller: Infineon Technologies
Description: IC CLK BUFF 11OUT 200MHZ 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Output: LVTTL
Frequency - Max: 200MHz
Type: Clock Buffer, Fanout Distribution
Input: LVPECL, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 4:10
Differential - Input:Output: Yes/No
Supplier Device Package: 52-TQFP (10x10)
PLL: Yes
Divider/Multiplier: Yes/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FS064SDSMFM013 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FS064SDSMFM013
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MB89567APMC1-G-263E1 ProductGuide_2008.1.pdf
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB MROM 80LQFP
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89485-G-263-CHIP-CN
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 39
Produkt ist nicht verfügbar
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MB95F263HPFT-G-SNE2 MB95260H_70H_80H_Series_RevA_Apr4_2016.pdf
Hersteller: Infineon Technologies
Description: IC ANALOG
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 20-TSSOP
Part Status: Obsolete
Number of I/O: 16
Produkt ist nicht verfügbar
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MB89935BPFV-G-263BNDERE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 30SSOP
Packaging: Tape & Reel (TR)
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 30-SSOP
Part Status: Obsolete
Number of I/O: 21
Produkt ist nicht verfügbar
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MB95F263KPFT-G-SNE2 MB95260H_70H_80H_Series_RevA_Apr4_2016.pdf
MB95F263KPFT-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 12KB FLASH 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-TSSOP
Part Status: Obsolete
Number of I/O: 17
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB95F263KPF-G-SNERE2
Hersteller: Infineon Technologies
Description: IC ANALOG
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-SOP
Part Status: Obsolete
Number of I/O: 17
Produkt ist nicht verfügbar
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MB89935BPFV-G-263-ERE1 ProductGuide_2008.1.pdf
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 30SSOP
Packaging: Tray
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 30-SSOP
Part Status: Obsolete
Number of I/O: 21
Produkt ist nicht verfügbar
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CY96F683ABPMC-GS-UJE1 Infineon-CY96680_Series_F2MC-16FX_16_Bit_Microcontroller-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edca5f36099&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration
CY96F683ABPMC-GS-UJE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 96KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 14x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I²C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 65
Produkt ist nicht verfügbar
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PSB4451RV1.2 PSB4450-51.pdf?t.download=true&u=ovmfp3
PSB4451RV1.2
Hersteller: Infineon Technologies
Description: ANIC ANALOG NETWORK INTERFACE CI
Packaging: Bulk
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
52+9.42 EUR
Mindestbestellmenge: 52
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PSB4450RV1.2 PSB4450-51.pdf?t.download=true&u=ovmfp3
PSB4450RV1.2
Hersteller: Infineon Technologies
Description: ANIC ANALOG NETWORK INTERFACE CI
Packaging: Bulk
Part Status: Active
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
55+8.95 EUR
Mindestbestellmenge: 55
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IPB60R280P6ATMA1 Infineon-IPX60R280P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e269e3e0021
IPB60R280P6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Produkt ist nicht verfügbar
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IPB60R280P6ATMA1 Infineon-IPX60R280P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e269e3e0021
IPB60R280P6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
auf Bestellung 982 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.92 EUR
10+2.78 EUR
100+1.91 EUR
500+1.56 EUR
Mindestbestellmenge: 5
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IDH16G65C6XKSA1 Infineon-IDH16G65C6-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce39244070531
IDH16G65C6XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 34A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 783pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 16 A
Current - Reverse Leakage @ Vr: 53 µA @ 420 V
auf Bestellung 6473 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.13 EUR
50+4.81 EUR
100+4.4 EUR
500+3.67 EUR
1000+3.53 EUR
Mindestbestellmenge: 2
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IRFC5210B
Hersteller: Infineon Technologies
Description: MOSFET 100V 40A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 60mOhm @ 40A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar
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BCR148SH6327XTSA1 bcr148series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440144ad602b8
BCR148SH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 100MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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BCR148E6433HTMA1 bcr148series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440144ad602b8
BCR148E6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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BCR148SH6433XTMA1 bcr148series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440144ad602b8
BCR148SH6433XTMA1
Hersteller: Infineon Technologies
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 100MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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IPP90R1K2C3XKSA2 Infineon-IPP90R1K2C3-DS-v01_00-en.pdf?fileId=db3a30432313ff5e0123a89fe8085c04
IPP90R1K2C3XKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 5.1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO220-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Produkt ist nicht verfügbar
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FM4-176L-S6E2GM Infineon-FM4_S6E2G-Series_Pioneer_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efa798e105a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM4-176L-S6E2GM
Hersteller: Infineon Technologies
Description: S6E2GM EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M4F
Board Type: Evaluation Platform
Utilized IC / Part: S6E2GM
Part Status: Active
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+81.66 EUR
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