Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (276139) > Seite 1514 nach 4603
| Foto | Bezeichnung | Hersteller | Beschreibung |
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CD5333B | Microchip Technology |
 Description: DIODE ZENER 3.3V 5W DIETolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 3 Ohms Supplier Device Package: Die Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 300 µA @ 1 V |
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| RN42N-I/RMCOS477 | Microchip Technology |
Description: MODULE Packaging: Bulk Package / Case: 35-SMD Module Sensitivity: -86dBm Mounting Type: Surface Mount Frequency: 2.4GHz Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Power - Output: 4dBm Data Rate: 3Mbps Protocol: Bluetooth v2.1 + EDR, Class 2 Antenna Type: Antenna Not Included RF Family/Standard: Bluetooth Serial Interfaces: SPI, UART Part Status: Obsolete DigiKey Programmable: Not Verified |
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| RN42-I/RMCOS477 | Microchip Technology |
Description: MODULE Packaging: Bulk Package / Case: 35-SMD Module Sensitivity: -86dBm Mounting Type: Surface Mount Frequency: 2.4GHz Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Power - Output: 4dBm Data Rate: 3Mbps Protocol: Bluetooth v2.1 + EDR, Class 2 Antenna Type: PCB Trace RF Family/Standard: Bluetooth Serial Interfaces: SPI, UART Part Status: Obsolete DigiKey Programmable: Not Verified |
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JANS2N3868S | Microchip Technology |
Description: TRANS PNP 60V 0.003A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Supplier Device Package: TO-39 (TO-205AD) Current - Collector (Ic) (Max): 3 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
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MXRT100KP85CA/TR | Microchip Technology | Description: TVS DIODE 85VWM 166VC CASE 5A |
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MXLRT100KP48A/TR | Microchip Technology |
Description: TVS DIODE 48VWM 94.3VC CASE 5A Packaging: Tape & Reel (TR) Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: Case 5A (DO-204AR) Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 94.3V Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Part Status: Active |
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MRT100KP250A | Microchip Technology |
Description: TVS DIODE 250VWM 493VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 250V Supplier Device Package: Case 5A (DO-204AR) Unidirectional Channels: 1 Voltage - Breakdown (Min): 278V Voltage - Clamping (Max) @ Ipp: 493V Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MRT100KP48AE3 | Microchip Technology |
Description: TVS DIODE 48VWM 94.3VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: Case 5A (DO-204AR) Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 94.3V Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXLRT100KP40CA | Microchip Technology |
Description: TVS DIODE 40VWM 78.6VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 40V Supplier Device Package: Case 5A (DO-204AR) Bidirectional Channels: 1 Voltage - Breakdown (Min): 44.4V Voltage - Clamping (Max) @ Ipp: 78.6V Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Part Status: Active |
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MXRT100KP350Ae3 | Microchip Technology |
Description: TVS DIODE 350VWM 690VC CASE 5A |
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MXRT100KP78CA | Microchip Technology |
Description: TVS DIODE 78VWM 153VC CASE 5A |
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MXRT100KP220A/TR | Microchip Technology | Description: TVS DIODE 220VWM 434VC CASE 5A |
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MXRT100KP60A/TR | Microchip Technology | Description: TVS DIODE 60VWM 118VC CASE 5A |
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MRT100KP51A | Microchip Technology |
Description: TVS DIODE 51VWM 101VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 51V Supplier Device Package: Case 5A (DO-204AR) Unidirectional Channels: 1 Voltage - Breakdown (Min): 56.7V Voltage - Clamping (Max) @ Ipp: 101V Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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ZL40205LDF1 | Microchip Technology |
Description: IC CLK BUFFER 1:6 750MHZ 32QFN Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Number of Circuits: 1 Mounting Type: Surface Mount Output: LVPECL Type: Fanout Buffer (Distribution) Input: CML, HCSL, LVCMOS, LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 3.465V Ratio - Input:Output: 1:6 Differential - Input:Output: Yes/Yes Supplier Device Package: 32-QFN (5x5) Part Status: Active Frequency - Max: 750 MHz |
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ZL40205LDF1 | Microchip Technology |
Description: IC CLK BUFFER 1:6 750MHZ 32QFN Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Number of Circuits: 1 Mounting Type: Surface Mount Output: LVPECL Type: Fanout Buffer (Distribution) Input: CML, HCSL, LVCMOS, LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 3.465V Ratio - Input:Output: 1:6 Differential - Input:Output: Yes/Yes Supplier Device Package: 32-QFN (5x5) Part Status: Active Frequency - Max: 750 MHz |
auf Bestellung 3981 Stücke: Lieferzeit 10-14 Tag (e) |
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MSCDC450A120AG | Microchip Technology |
Description: PM-DIODE-SIC-SBD-SP6C |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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MSCDC450A70AG | Microchip Technology |
Description: PM-DIODE-SIC-SBD-SP6C |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| DSC6111HI1B-013.5600T | Microchip Technology |
Description: MEMS CMOS OSC SMD |
Produkt ist nicht verfügbar |
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| CDLL4962 | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Bulk Part Status: Active |
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BZV55C11/TR | Microchip Technology |
Description: DIODE ZENER 11V DO213AA Tolerance: ±5.45% Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-213AA Part Status: Active Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V |
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MSMLJ60A | Microchip Technology |
Description: TVS DIODE 60VWM 96.8VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 31A Voltage - Reverse Standoff (Typ): 60V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 66.7V Voltage - Clamping (Max) @ Ipp: 96.8V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MA5KP24Ae3 | Microchip Technology |
Description: TVS DIODE 24VWM 38.9VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 128A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MA5KP22CA | Microchip Technology |
Description: TVS DIODE 22VWM 35.5VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 141A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-204AR Bidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MA5KP22CAe3 | Microchip Technology |
Description: TVS DIODE 22VWM 35.5VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 141A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-204AR Bidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MA5KP26CA | Microchip Technology |
Description: TVS DIODE 26VWM 42.1VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 119A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: DO-204AR Bidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 42.1V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MA5KP24A | Microchip Technology |
Description: TVS DIODE 24VWM 38.9VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 128A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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JANKCBM2N2221A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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JANSF2N2221AUBC/TR | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UBC Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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JANKCBD2N2221A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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JANSL2N2221AUA | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW |
Produkt ist nicht verfügbar |
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JANSM2N2221AUA/TR | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW |
Produkt ist nicht verfügbar |
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JANSP2N2221AUA | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW |
Produkt ist nicht verfügbar |
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JANS2N2221UB | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 250MHz Supplier Device Package: UB Voltage - Collector Emitter Breakdown (Max): 30 V |
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JANSD2N2221AUB/TR | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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| JANS2N2221UA/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) |
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JANSP2N2221AUB | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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JANSR2N2221AUB/TR | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UB Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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JANTXV2N2221AUB/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UB Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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| JANSD2N2221AUA | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW |
Produkt ist nicht verfügbar |
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JANSF2N2221A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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JANTXV2N2221AUA/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW |
Produkt ist nicht verfügbar |
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JANS2N2221AUB/TR | Microchip Technology |
Description: TRANS NPN 50V 0.8A UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UB Grade: Military Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: MIL-PRF-19500/255 |
Produkt ist nicht verfügbar |
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| JANSF2N2221AUBC | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
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| JANSG2N2221AUBC/TR | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
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JANSF2N2221AUA | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW |
Produkt ist nicht verfügbar |
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JANSR2N2221A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSP2N2221AUBC | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UBC Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSR2N2221AUA | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| JANSR2N2221AUA/TR | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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JANSL2N2221AUB | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSF2N2221AL | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANKCBR2N2221A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSD2N2221AUBC/TR | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UBC Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANTX2N2221AUB/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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24FC01T-I/MUY | Microchip Technology |
Description: IC EEPROM 1KBIT I2C 1MHZ 8UDFN Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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24FC01T-I/MUY | Microchip Technology |
Description: IC EEPROM 1KBIT I2C 1MHZ 8UDFN Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
auf Bestellung 4683 Stücke: Lieferzeit 10-14 Tag (e) |
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24FC04T-E/MUY | Microchip Technology |
Description: IC EEPROM 4KBIT I2C 1MHZ 8UDFN Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Write Cycle Time - Word, Page: 5ms Memory Interface: I²C Access Time: 450 ns Memory Organization: 256 x 8 x 2 DigiKey Programmable: Not Verified |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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24FC04T-E/MUY | Microchip Technology |
Description: IC EEPROM 4KBIT I2C 1MHZ 8UDFN Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Write Cycle Time - Word, Page: 5ms Memory Interface: I²C Access Time: 450 ns Memory Organization: 256 x 8 x 2 DigiKey Programmable: Not Verified |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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24FC01T-I/MS | Microchip Technology |
Description: IC EEPROM 1KBIT I2C 1MHZ 8MSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CD5333B |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 3.3V 5W DIE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: Die
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 300 µA @ 1 V
Description: DIODE ZENER 3.3V 5W DIE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: Die
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 300 µA @ 1 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RN42N-I/RMCOS477 |
Hersteller: Microchip Technology
Description: MODULE
Packaging: Bulk
Package / Case: 35-SMD Module
Sensitivity: -86dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 4dBm
Data Rate: 3Mbps
Protocol: Bluetooth v2.1 + EDR, Class 2
Antenna Type: Antenna Not Included
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: MODULE
Packaging: Bulk
Package / Case: 35-SMD Module
Sensitivity: -86dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 4dBm
Data Rate: 3Mbps
Protocol: Bluetooth v2.1 + EDR, Class 2
Antenna Type: Antenna Not Included
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RN42-I/RMCOS477 |
Hersteller: Microchip Technology
Description: MODULE
Packaging: Bulk
Package / Case: 35-SMD Module
Sensitivity: -86dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 4dBm
Data Rate: 3Mbps
Protocol: Bluetooth v2.1 + EDR, Class 2
Antenna Type: PCB Trace
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: MODULE
Packaging: Bulk
Package / Case: 35-SMD Module
Sensitivity: -86dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 4dBm
Data Rate: 3Mbps
Protocol: Bluetooth v2.1 + EDR, Class 2
Antenna Type: PCB Trace
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANS2N3868S |
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.003A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS PNP 60V 0.003A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXRT100KP85CA/TR |
Hersteller: Microchip Technology
Description: TVS DIODE 85VWM 166VC CASE 5A
Description: TVS DIODE 85VWM 166VC CASE 5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXLRT100KP48A/TR |
Hersteller: Microchip Technology
Description: TVS DIODE 48VWM 94.3VC CASE 5A
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 94.3V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 48VWM 94.3VC CASE 5A
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 94.3V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MRT100KP250A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 250VWM 493VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 278V
Voltage - Clamping (Max) @ Ipp: 493V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 250VWM 493VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 278V
Voltage - Clamping (Max) @ Ipp: 493V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MRT100KP48AE3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 48VWM 94.3VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 94.3V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 48VWM 94.3VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 94.3V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXLRT100KP40CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 40VWM 78.6VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 78.6V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 40VWM 78.6VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 78.6V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXRT100KP350Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 350VWM 690VC CASE 5A
Description: TVS DIODE 350VWM 690VC CASE 5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXRT100KP78CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 78VWM 153VC CASE 5A
Description: TVS DIODE 78VWM 153VC CASE 5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXRT100KP220A/TR |
Hersteller: Microchip Technology
Description: TVS DIODE 220VWM 434VC CASE 5A
Description: TVS DIODE 220VWM 434VC CASE 5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXRT100KP60A/TR |
Hersteller: Microchip Technology
Description: TVS DIODE 60VWM 118VC CASE 5A
Description: TVS DIODE 60VWM 118VC CASE 5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MRT100KP51A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 51VWM 101VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 101V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 51VWM 101VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 101V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZL40205LDF1 |
|
Hersteller: Microchip Technology
Description: IC CLK BUFFER 1:6 750MHZ 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: CML, HCSL, LVCMOS, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Frequency - Max: 750 MHz
Description: IC CLK BUFFER 1:6 750MHZ 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: CML, HCSL, LVCMOS, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Frequency - Max: 750 MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZL40205LDF1 |
|
Hersteller: Microchip Technology
Description: IC CLK BUFFER 1:6 750MHZ 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: CML, HCSL, LVCMOS, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Frequency - Max: 750 MHz
Description: IC CLK BUFFER 1:6 750MHZ 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: CML, HCSL, LVCMOS, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Frequency - Max: 750 MHz
auf Bestellung 3981 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.2 EUR |
| 25+ | 7.69 EUR |
| 100+ | 7.43 EUR |
| MSCDC450A120AG |
|
Hersteller: Microchip Technology
Description: PM-DIODE-SIC-SBD-SP6C
Description: PM-DIODE-SIC-SBD-SP6C
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 911.01 EUR |
| MSCDC450A70AG |
|
Hersteller: Microchip Technology
Description: PM-DIODE-SIC-SBD-SP6C
Description: PM-DIODE-SIC-SBD-SP6C
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 671.6 EUR |
| DSC6111HI1B-013.5600T |
|
Hersteller: Microchip Technology
Description: MEMS CMOS OSC SMD
Description: MEMS CMOS OSC SMD
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| BZV55C11/TR |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 11V DO213AA
Tolerance: ±5.45%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Description: DIODE ZENER 11V DO213AA
Tolerance: ±5.45%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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| MSMLJ60A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MA5KP24Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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| MA5KP22CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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| MA5KP22CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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| MA5KP26CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 26VWM 42.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 119A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 26VWM 42.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 119A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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| MA5KP24A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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| JANKCBM2N2221A |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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| JANSF2N2221AUBC/TR |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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| JANKCBD2N2221A |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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| JANSL2N2221AUA |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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| JANSM2N2221AUA/TR |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| JANSP2N2221AUA |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| JANS2N2221UB |
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: UB
Voltage - Collector Emitter Breakdown (Max): 30 V
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: UB
Voltage - Collector Emitter Breakdown (Max): 30 V
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| JANSD2N2221AUB/TR |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| JANSP2N2221AUB |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| JANSR2N2221AUB/TR |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| JANTXV2N2221AUB/TR |
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANSD2N2221AUA |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANSF2N2221A |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV2N2221AUA/TR |
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANS2N2221AUB/TR |
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANSF2N2221AUBC |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Description: RH SMALL-SIGNAL BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANSG2N2221AUBC/TR |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Description: RH SMALL-SIGNAL BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANSF2N2221AUA |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANSR2N2221A |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANSP2N2221AUBC |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANSR2N2221AUA |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANSR2N2221AUA/TR |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANSL2N2221AUB |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANSF2N2221AL |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANKCBR2N2221A |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANSD2N2221AUBC/TR |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX2N2221AUB/TR |
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 24FC01T-I/MUY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 24FC01T-I/MUY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
auf Bestellung 4683 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 0.3 EUR |
| 100+ | 0.29 EUR |
| 24FC04T-E/MUY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 450 ns
Memory Organization: 256 x 8 x 2
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 450 ns
Memory Organization: 256 x 8 x 2
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.44 EUR |
| 24FC04T-E/MUY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 450 ns
Memory Organization: 256 x 8 x 2
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 450 ns
Memory Organization: 256 x 8 x 2
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 0.48 EUR |
| 40+ | 0.45 EUR |
| 100+ | 0.44 EUR |
| 24FC01T-I/MS |
|
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C 1MHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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