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CDLL4962 Microchip Technology Description: VOLTAGE REGULATOR
Part Status: Active
Packaging: Bulk
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BZV55C11/TR BZV55C11/TR Microchip Technology 8298-bzv55-c2v4-c75-pdf.pdf Description: DIODE ZENER 11V DO213AA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5.45%
Packaging: Tape & Reel (TR)
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MSMLJ60A MSMLJ60A Microchip Technology 10563-msml-datasheet Description: TVS DIODE 60VWM 96.8VC DO214AB
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 96.8V
Voltage - Breakdown (Min): 66.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB
Voltage - Reverse Standoff (Typ): 60V
Current - Peak Pulse (10/1000µs): 31A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Bulk
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MA5KP24Ae3 MA5KP24Ae3 Microchip Technology rf01010_rb.pdf Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MA5KP22CA MA5KP22CA Microchip Technology rf01010_rb.pdf Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MA5KP22CAe3 MA5KP22CAe3 Microchip Technology rf01010_rb.pdf Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MA5KP26CA MA5KP26CA Microchip Technology rf01010_rb.pdf Description: TVS DIODE 26VWM 42.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 119A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MA5KP24A MA5KP24A Microchip Technology rf01010_rb.pdf Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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JANKCBM2N2221A JANKCBM2N2221A Microchip Technology Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
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JANSF2N2221AUBC/TR JANSF2N2221AUBC/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UBC
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
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JANKCBD2N2221A JANKCBD2N2221A Microchip Technology Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
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JANSL2N2221AUA JANSL2N2221AUA Microchip Technology Description: RH SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
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JANSM2N2221AUA/TR JANSM2N2221AUA/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
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JANSP2N2221AUA JANSP2N2221AUA Microchip Technology Description: RH SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
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JANS2N2221UB JANS2N2221UB Microchip Technology Description: SMALL-SIGNAL BJT
Voltage - Collector Emitter Breakdown (Max): 30 V
Supplier Device Package: UB
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
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JANSD2N2221AUB/TR JANSD2N2221AUB/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UB
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JANS2N2221UA/TR Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
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JANSP2N2221AUB JANSP2N2221AUB Microchip Technology Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
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JANSR2N2221AUB/TR JANSR2N2221AUB/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JANTXV2N2221AUB/TR JANTXV2N2221AUB/TR Microchip Technology Description: SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JANSD2N2221AUA Microchip Technology Description: RH SMALL-SIGNAL BJT
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
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JANSF2N2221A JANSF2N2221A Microchip Technology Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
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JANTXV2N2221AUA/TR JANTXV2N2221AUA/TR Microchip Technology Description: SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JANS2N2221AUB/TR JANS2N2221AUB/TR Microchip Technology Description: TRANS NPN 50V 0.8A UB
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Qualification: MIL-PRF-19500/255
Grade: Military
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JANSF2N2221AUBC Microchip Technology Description: RH SMALL-SIGNAL BJT
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JANSG2N2221AUBC/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
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JANSF2N2221AUA JANSF2N2221AUA Microchip Technology Description: RH SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
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JANSR2N2221A JANSR2N2221A Microchip Technology Description: RH SMALL-SIGNAL BJT
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
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JANSP2N2221AUBC JANSP2N2221AUBC Microchip Technology Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UBC
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar
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JANSR2N2221AUA JANSR2N2221AUA Microchip Technology Description: RH SMALL-SIGNAL BJT
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
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JANSR2N2221AUA/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JANSL2N2221AUB JANSL2N2221AUB Microchip Technology Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar
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JANSF2N2221AL JANSF2N2221AL Microchip Technology Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
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JANKCBR2N2221A JANKCBR2N2221A Microchip Technology Description: RH SMALL-SIGNAL BJT
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Power - Max: 500 mW
Produkt ist nicht verfügbar
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JANSD2N2221AUBC/TR JANSD2N2221AUBC/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UBC
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
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JANTX2N2221AUB/TR JANTX2N2221AUB/TR Microchip Technology Description: SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
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24FC01T-I/MUY 24FC01T-I/MUY Microchip Technology 24AA01-24LC01B-24FC01-1K-I2C-Serial-EEPROM-20001711M.pdf Description: IC EEPROM 1KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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24FC01T-I/MUY 24FC01T-I/MUY Microchip Technology 24AA01-24LC01B-24FC01-1K-I2C-Serial-EEPROM-20001711M.pdf Description: IC EEPROM 1KBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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24FC04T-E/MUY 24FC04T-E/MUY Microchip Technology 24AA04-24LC04B-24FC04-4K-I2C-Serial-EEPROM-20001708P.pdf Description: IC EEPROM 4KBIT I2C 1MHZ 8UDFN
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8 x 2
Access Time: 450 ns
Memory Interface: I²C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-UDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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24FC04T-E/MUY 24FC04T-E/MUY Microchip Technology 24AA04-24LC04B-24FC04-4K-I2C-Serial-EEPROM-20001708P.pdf Description: IC EEPROM 4KBIT I2C 1MHZ 8UDFN
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8 x 2
Access Time: 450 ns
Memory Interface: I²C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-UDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
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24FC01T-I/MS 24FC01T-I/MS Microchip Technology 24AA01-24LC01B-24FC01-1K-I2C-Serial-EEPROM-20001711M.pdf Description: IC EEPROM 1KBIT I2C 1MHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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24FC01T-I/MS 24FC01T-I/MS Microchip Technology 24AA01-24LC01B-24FC01-1K-I2C-Serial-EEPROM-20001711M.pdf Description: IC EEPROM 1KBIT I2C 1MHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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24FC04T-E/SN 24FC04T-E/SN Microchip Technology 24AA04-24LC04B-24FC04-4K-I2C-Serial-EEPROM-20001708P.pdf Description: IC EEPROM 4KBIT I2C 1MHZ 8SOIC
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8 x 2
Access Time: 450 ns
Memory Interface: I²C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
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24FC04T-E/SN 24FC04T-E/SN Microchip Technology 24AA04-24LC04B-24FC04-4K-I2C-Serial-EEPROM-20001708P.pdf Description: IC EEPROM 4KBIT I2C 1MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8 x 2
Access Time: 450 ns
Memory Interface: I²C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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24FC01T-E/SN 24FC01T-E/SN Microchip Technology 24AA01-24LC01B-24FC01-1K-I2C-Serial-EEPROM-20001711M.pdf Description: IC EEPROM 1KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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24FC01T-E/SN 24FC01T-E/SN Microchip Technology 24AA01-24LC01B-24FC01-1K-I2C-Serial-EEPROM-20001711M.pdf Description: IC EEPROM 1KBIT I2C 1MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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24FC04T-I/MUY 24FC04T-I/MUY Microchip Technology 24AA04-24LC04B-24FC04-4K-I2C-Serial-EEPROM-20001708P.pdf Description: IC EEPROM 4KBIT I2C 1MHZ 8UDFN
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24FC04T-I/MUY 24FC04T-I/MUY Microchip Technology 24AA04-24LC04B-24FC04-4K-I2C-Serial-EEPROM-20001708P.pdf Description: IC EEPROM 4KBIT I2C 1MHZ 8UDFN
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24FC16T-E/ST 24FC16T-E/ST Microchip Technology 20001703M.pdf Description: IC EEPROM 16KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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24FC16T-E/ST 24FC16T-E/ST Microchip Technology 20001703M.pdf Description: IC EEPROM 16KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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2N6323 Microchip Technology Description: POWER BJT
Power - Max: 350 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Supplier Device Package: TO-204AD (TO-3)
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
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2N6327 2N6327 Microchip Technology Description: TRANS PNP 80V 30A TO3
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USBQNM50403CE3/TR7 USBQNM50403CE3/TR7 Microchip Technology 123772-usbqnm504xxc-rev-b-datasheet Description: TVS DIODE 3.3VWM 11VC QFN143
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 11V
Voltage - Breakdown (Min): 4V
Bidirectional Channels: 1
Supplier Device Package: QFN-143
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 3pF @ 1MHz
Applications: Ethernet
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-VDFN
Packaging: Tape & Reel (TR)
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USBQNM50403CE3/TR7 USBQNM50403CE3/TR7 Microchip Technology 123772-usbqnm504xxc-rev-b-datasheet Description: TVS DIODE 3.3VWM 11VC QFN143
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 11V
Voltage - Breakdown (Min): 4V
Bidirectional Channels: 1
Supplier Device Package: QFN-143
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 3pF @ 1MHz
Applications: Ethernet
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-VDFN
Packaging: Cut Tape (CT)
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DSC1123DI2-025.0000B Microchip Technology MCHP-S-A0006612827-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC LOW POWER LVDS -40C-85C
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DSC1004DI2-025.0000T Microchip Technology MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC XO 25.0000MHZ CMOS SMD
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DSC1121DI2-025.0000 DSC1121DI2-025.0000 Microchip Technology MCHP-S-A0003695894-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC XO 25.0000MHZ CMOS SMD
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DSC1123DI2-025.0000T Microchip Technology MCHP-S-A0006612827-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC XO 25.0000MHZ LVDS SMD
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DSA1001DI2-025.0000TVAO DSA1001DI2-025.0000TVAO Microchip Technology DSA1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-for-Automotive-DS20005889B.pdf Description: MEMS OSC AUTO LP -40C-85C 25PPM
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DSA1001DI2-025.0000VAO DSA1001DI2-025.0000VAO Microchip Technology DSA1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-for-Automotive-DS20005889B.pdf Description: MEMS OSC AUTO LP -40C-85C 25PPM
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CDLL4962
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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BZV55C11/TR 8298-bzv55-c2v4-c75-pdf.pdf
BZV55C11/TR
Hersteller: Microchip Technology
Description: DIODE ZENER 11V DO213AA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5.45%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MSMLJ60A 10563-msml-datasheet
MSMLJ60A
Hersteller: Microchip Technology
Description: TVS DIODE 60VWM 96.8VC DO214AB
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 96.8V
Voltage - Breakdown (Min): 66.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB
Voltage - Reverse Standoff (Typ): 60V
Current - Peak Pulse (10/1000µs): 31A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Bulk
Produkt ist nicht verfügbar
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MA5KP24Ae3 rf01010_rb.pdf
MA5KP24Ae3
Hersteller: Microchip Technology
Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MA5KP22CA rf01010_rb.pdf
MA5KP22CA
Hersteller: Microchip Technology
Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MA5KP22CAe3 rf01010_rb.pdf
MA5KP22CAe3
Hersteller: Microchip Technology
Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MA5KP26CA rf01010_rb.pdf
MA5KP26CA
Hersteller: Microchip Technology
Description: TVS DIODE 26VWM 42.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 119A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MA5KP24A rf01010_rb.pdf
MA5KP24A
Hersteller: Microchip Technology
Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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JANKCBM2N2221A
JANKCBM2N2221A
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANSF2N2221AUBC/TR
JANSF2N2221AUBC/TR
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UBC
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JANKCBD2N2221A
JANKCBD2N2221A
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANSL2N2221AUA
JANSL2N2221AUA
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar
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JANSM2N2221AUA/TR
JANSM2N2221AUA/TR
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JANSP2N2221AUA
JANSP2N2221AUA
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar
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JANS2N2221UB
JANS2N2221UB
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Voltage - Collector Emitter Breakdown (Max): 30 V
Supplier Device Package: UB
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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JANSD2N2221AUB/TR
JANSD2N2221AUB/TR
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UB
Produkt ist nicht verfügbar
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JANS2N2221UA/TR
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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JANSP2N2221AUB
JANSP2N2221AUB
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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JANSR2N2221AUB/TR
JANSR2N2221AUB/TR
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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JANTXV2N2221AUB/TR
JANTXV2N2221AUB/TR
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JANSD2N2221AUA
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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JANSF2N2221A
JANSF2N2221A
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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JANTXV2N2221AUA/TR
JANTXV2N2221AUA/TR
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JANS2N2221AUB/TR
JANS2N2221AUB/TR
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A UB
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Qualification: MIL-PRF-19500/255
Grade: Military
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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JANSF2N2221AUBC
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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JANSG2N2221AUBC/TR
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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JANSF2N2221AUA
JANSF2N2221AUA
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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JANSR2N2221A
JANSR2N2221A
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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JANSP2N2221AUBC
JANSP2N2221AUBC
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UBC
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar
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JANSR2N2221AUA
JANSR2N2221AUA
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Produkt ist nicht verfügbar
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JANSR2N2221AUA/TR
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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JANSL2N2221AUB
JANSL2N2221AUB
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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JANSF2N2221AL
JANSF2N2221AL
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Produkt ist nicht verfügbar
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JANKCBR2N2221A
JANKCBR2N2221A
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Power - Max: 500 mW
Produkt ist nicht verfügbar
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JANSD2N2221AUBC/TR
JANSD2N2221AUBC/TR
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UBC
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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JANTX2N2221AUB/TR
JANTX2N2221AUB/TR
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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24FC01T-I/MUY 24AA01-24LC01B-24FC01-1K-I2C-Serial-EEPROM-20001711M.pdf
24FC01T-I/MUY
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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24FC01T-I/MUY 24AA01-24LC01B-24FC01-1K-I2C-Serial-EEPROM-20001711M.pdf
24FC01T-I/MUY
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
auf Bestellung 4683 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
59+0.3 EUR
100+0.29 EUR
Mindestbestellmenge: 59 Stücke
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24FC04T-E/MUY 24AA04-24LC04B-24FC04-4K-I2C-Serial-EEPROM-20001708P.pdf
24FC04T-E/MUY
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ 8UDFN
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8 x 2
Access Time: 450 ns
Memory Interface: I²C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-UDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.44 EUR
Mindestbestellmenge: 5000 Stücke
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24FC04T-E/MUY 24AA04-24LC04B-24FC04-4K-I2C-Serial-EEPROM-20001708P.pdf
24FC04T-E/MUY
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ 8UDFN
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8 x 2
Access Time: 450 ns
Memory Interface: I²C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-UDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
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38+0.48 EUR
40+0.45 EUR
100+0.44 EUR
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24FC01T-I/MS 24AA01-24LC01B-24FC01-1K-I2C-Serial-EEPROM-20001711M.pdf
24FC01T-I/MS
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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24FC01T-I/MS 24AA01-24LC01B-24FC01-1K-I2C-Serial-EEPROM-20001711M.pdf
24FC01T-I/MS
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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24FC04T-E/SN 24AA04-24LC04B-24FC04-4K-I2C-Serial-EEPROM-20001708P.pdf
24FC04T-E/SN
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ 8SOIC
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8 x 2
Access Time: 450 ns
Memory Interface: I²C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
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24FC04T-E/SN 24AA04-24LC04B-24FC04-4K-I2C-Serial-EEPROM-20001708P.pdf
24FC04T-E/SN
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8 x 2
Access Time: 450 ns
Memory Interface: I²C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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24FC01T-E/SN 24AA01-24LC01B-24FC01-1K-I2C-Serial-EEPROM-20001711M.pdf
24FC01T-E/SN
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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24FC01T-E/SN 24AA01-24LC01B-24FC01-1K-I2C-Serial-EEPROM-20001711M.pdf
24FC01T-E/SN
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
auf Bestellung 2650 Stücke:
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AnzahlPreis
42+0.42 EUR
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24FC04T-I/MUY 24AA04-24LC04B-24FC04-4K-I2C-Serial-EEPROM-20001708P.pdf
24FC04T-I/MUY
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ 8UDFN
Produkt ist nicht verfügbar
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24FC04T-I/MUY 24AA04-24LC04B-24FC04-4K-I2C-Serial-EEPROM-20001708P.pdf
24FC04T-I/MUY
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ 8UDFN
auf Bestellung 10 Stücke:
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24FC16T-E/ST 20001703M.pdf
24FC16T-E/ST
Hersteller: Microchip Technology
Description: IC EEPROM 16KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
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2500+0.52 EUR
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24FC16T-E/ST 20001703M.pdf
24FC16T-E/ST
Hersteller: Microchip Technology
Description: IC EEPROM 16KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2897 Stücke:
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32+0.55 EUR
100+0.52 EUR
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2N6323
Hersteller: Microchip Technology
Description: POWER BJT
Power - Max: 350 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Supplier Device Package: TO-204AD (TO-3)
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Produkt ist nicht verfügbar
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2N6327
2N6327
Hersteller: Microchip Technology
Description: TRANS PNP 80V 30A TO3
Produkt ist nicht verfügbar
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USBQNM50403CE3/TR7 123772-usbqnm504xxc-rev-b-datasheet
USBQNM50403CE3/TR7
Hersteller: Microchip Technology
Description: TVS DIODE 3.3VWM 11VC QFN143
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 11V
Voltage - Breakdown (Min): 4V
Bidirectional Channels: 1
Supplier Device Package: QFN-143
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 3pF @ 1MHz
Applications: Ethernet
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-VDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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USBQNM50403CE3/TR7 123772-usbqnm504xxc-rev-b-datasheet
USBQNM50403CE3/TR7
Hersteller: Microchip Technology
Description: TVS DIODE 3.3VWM 11VC QFN143
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 11V
Voltage - Breakdown (Min): 4V
Bidirectional Channels: 1
Supplier Device Package: QFN-143
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 3pF @ 1MHz
Applications: Ethernet
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-VDFN
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
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AnzahlPreis
3+6.2 EUR
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DSC1123DI2-025.0000B MCHP-S-A0006612827-1.pdf?t.download=true&u=5oefqw
Hersteller: Microchip Technology
Description: MEMS OSC LOW POWER LVDS -40C-85C
Produkt ist nicht verfügbar
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DSC1004DI2-025.0000T MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw
Hersteller: Microchip Technology
Description: MEMS OSC XO 25.0000MHZ CMOS SMD
Produkt ist nicht verfügbar
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DSC1121DI2-025.0000 MCHP-S-A0003695894-1.pdf?t.download=true&u=5oefqw
DSC1121DI2-025.0000
Hersteller: Microchip Technology
Description: MEMS OSC XO 25.0000MHZ CMOS SMD
Produkt ist nicht verfügbar
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DSC1123DI2-025.0000T MCHP-S-A0006612827-1.pdf?t.download=true&u=5oefqw
Hersteller: Microchip Technology
Description: MEMS OSC XO 25.0000MHZ LVDS SMD
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DSA1001DI2-025.0000TVAO DSA1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-for-Automotive-DS20005889B.pdf
DSA1001DI2-025.0000TVAO
Hersteller: Microchip Technology
Description: MEMS OSC AUTO LP -40C-85C 25PPM
Produkt ist nicht verfügbar
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DSA1001DI2-025.0000VAO DSA1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-for-Automotive-DS20005889B.pdf
DSA1001DI2-025.0000VAO
Hersteller: Microchip Technology
Description: MEMS OSC AUTO LP -40C-85C 25PPM
Produkt ist nicht verfügbar
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