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MASMLJ6.5CAe3 MASMLJ6.5CAe3 Microchip Technology 10563-msml-datasheet Description: TVS DIODE 6.5VWM 11.2VC DO214AB
Bidirectional Channels: 1
Supplier Device Package: DO-214AB
Voltage - Reverse Standoff (Typ): 6.5V
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 11.2V
Voltage - Breakdown (Min): 7.22V
Current - Peak Pulse (10/1000µs): 267.9A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Bulk
Produkt ist nicht verfügbar
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MASMLJ64CAe3 MASMLJ64CAe3 Microchip Technology 10563-msml-datasheet Description: TVS DIODE 64VWM 103VC DO214AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 103V
Voltage - Breakdown (Min): 71.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB
Package / Case: DO-214AB, SMC
Packaging: Bulk
Voltage - Reverse Standoff (Typ): 64V
Current - Peak Pulse (10/1000µs): 29.2A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
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MASMLJ8.0CAe3 MASMLJ8.0CAe3 Microchip Technology 10563-msml-datasheet Description: TVS DIODE 8VWM 13.6VC DO214AB
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 13.6V
Voltage - Breakdown (Min): 8.89V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB
Voltage - Reverse Standoff (Typ): 8V
Current - Peak Pulse (10/1000µs): 220.6A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
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MLCE130Ae3 Microchip Technology 9498-mlce-pdf Description: TVS DIODE 130VWM 209VC CASE-1
Voltage - Breakdown (Min): 144V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 130V
Current - Peak Pulse (10/1000µs): 7.2A
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500
Grade: Military
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 209V
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1N4753AUR/TR 1N4753AUR/TR Microchip Technology 1N4728UR-1N4764AUR.pdf Description: DIODE ZENER 36V 1W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
Produkt ist nicht verfügbar
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DSC6101HA2B-072.5000T DSC6101HA2B-072.5000T Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf Description: MEMS OSC ULP LVCMOS -40C-125C 25
Base Resonator: MEMS
Frequency: 72.5 MHz
Part Status: Active
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 3mA (Typ)
Ratings: AEC-Q100
Voltage - Supply: 1.71V ~ 3.63V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 125°C
Type: XO (Standard)
Function: Enable/Disable
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: 4-VFLGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DSC6331HL1AB-072.5000T Microchip Technology DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf Description: MEMS OSC SMD
Packaging: Tape & Reel (TR)
Base Resonator: MEMS
Frequency: 72.5 MHz
Part Status: Active
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 3mA (Typ)
Spread Spectrum Bandwidth: ±0.25%, Center Spread
Voltage - Supply: 1.71V ~ 3.63V
Frequency Stability: ±50ppm
Operating Temperature: -40°C ~ 105°C
Type: XO (Standard)
Function: Standby (Power Down)
Output: LVCMOS
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: 4-VFLGA
Produkt ist nicht verfügbar
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DSC6101HA2B-072.5000 DSC6101HA2B-072.5000 Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf Description: MEMS OSC ULP LVCMOS -40C-125C 25
Base Resonator: MEMS
Frequency: 72.5 MHz
Part Status: Active
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 3mA (Typ)
Ratings: AEC-Q100
Voltage - Supply: 1.71V ~ 3.63V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 125°C
Type: XO (Standard)
Function: Enable/Disable
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: 4-VFLGA
Packaging: Bag
Produkt ist nicht verfügbar
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DSC6101HL2B-072.5000 DSC6101HL2B-072.5000 Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf Description: MEMS OSC ULP LVCMOS -40C-105C 25
Frequency: 72.5 MHz
Part Status: Active
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 3mA (Typ)
Ratings: AEC-Q100
Voltage - Supply: 1.71V ~ 3.63V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 105°C
Type: XO (Standard)
Function: Enable/Disable
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: 4-VFLGA
Packaging: Bag
Base Resonator: MEMS
Produkt ist nicht verfügbar
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DSC6102HL2B-072.5000T Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf Description: MEMS OSC ULP LVCMOS -40C-105C 25
Base Resonator: MEMS
Frequency: 72.5 MHz
Part Status: Active
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 3mA (Typ)
Ratings: AEC-Q100
Voltage - Supply: 1.71V ~ 3.63V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 105°C
Type: XO (Standard)
Function: Enable/Disable
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: 4-VFLGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DSC6102HL2B-072.5000 Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf Description: MEMS OSC ULP LVCMOS -40C-105C 25
Base Resonator: MEMS
Frequency: 72.5 MHz
Part Status: Active
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 3mA (Typ)
Ratings: AEC-Q100
Voltage - Supply: 1.71V ~ 3.63V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 105°C
Type: XO (Standard)
Function: Enable/Disable
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: 4-VFLGA
Packaging: Bag
Produkt ist nicht verfügbar
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DSC6331HL1AB-072.5000 Microchip Technology DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf Description: MEMS OSC SMD
Base Resonator: MEMS
Frequency: 72.5 MHz
Part Status: Active
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 3mA (Typ)
Spread Spectrum Bandwidth: ±0.25%, Center Spread
Voltage - Supply: 1.71V ~ 3.63V
Frequency Stability: ±50ppm
Operating Temperature: -40°C ~ 105°C
Type: XO (Standard)
Function: Standby (Power Down)
Output: LVCMOS
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: 4-VFLGA
Packaging: Bag
Produkt ist nicht verfügbar
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DSC6101HL2B-072.5000T DSC6101HL2B-072.5000T Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf Description: MEMS OSC ULP LVCMOS -40C-105C 25
Base Resonator: MEMS
Frequency: 72.5 MHz
Part Status: Active
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 3mA (Typ)
Ratings: AEC-Q100
Voltage - Supply: 1.71V ~ 3.63V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 105°C
Type: XO (Standard)
Function: Enable/Disable
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: 4-VFLGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ATSAM4SD32CA-CFUR ATSAM4SD32CA-CFUR Microchip Technology Atmel-11100-32-bit%20Cortex-M4-Microcontroller-SAM4S_Datasheet.pdf Description: IC MCU 32BIT 2MB FLASH 100VFBGA
Packaging: Cut Tape (CT)
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-VFBGA (7x7)
Part Status: Active
Number of I/O: 79
DigiKey Programmable: Not Verified
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1N4733AURE3/TR 1N4733AURE3/TR Microchip Technology 1N4728UR-1N4764AUR.pdf Description: DIODE ZENER 5.1V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
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1N4733AURE3/TR 1N4733AURE3/TR Microchip Technology 1N4728UR-1N4764AUR.pdf Description: DIODE ZENER 5.1V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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MPFS-ICICLE-KIT-ES-FP5 Microchip Technology Description: DEVELOPMENT KIT
Packaging: Bulk
For Use With/Related Products: MPFS250
Type: FPGA + MCU/MPU SoC
Contents: Board(s), Cable(s), Power Supply
Platform: PolarFire SoC FPGA SiFive RISC-V Icicle
Part Status: Obsolete
Produkt ist nicht verfügbar
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MIC6315-46D4UY TR MIC6315-46D4UY TR Microchip Technology MCRL-S-A0000040620-1.pdf?t.download=true&u=5oefqw Description: OPEN-DRAIN MICROPROCESSOR RESET
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Power Supply Monitor
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 1.1s Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-143
Part Status: Active
DigiKey Programmable: Not Verified
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1N4578AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: TEMPERATURE COMPENSATED
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 50 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N4578AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: TEMPERATURE COMPENSATED
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 50 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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1N4576AUR-1/TR 1N4576AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: TEMPERATURE COMPENSATED
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 50 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Tape & Reel (TR)
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1N4576AUR-1/TR 1N4576AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: TEMPERATURE COMPENSATED
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 50 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Cut Tape (CT)
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1N4577AUR-1/TR 1N4577AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: TEMPERATURE COMPENSATED
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 50 Ohms
Operating Temperature: -65°C ~ 175°C
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1N4577AUR-1/TR 1N4577AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: TEMPERATURE COMPENSATED
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 50 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Cut Tape (CT)
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1N4571AUR-1/TR 1N4571AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: TEMPERATURE COMPENSATED
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 100 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Tape & Reel (TR)
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1N4571AUR-1/TR 1N4571AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: TEMPERATURE COMPENSATED
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 100 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Cut Tape (CT)
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1N4579AUR-1/TR 1N4579AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: DIODE ZENER 500MW DO213AA
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 50 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Tape & Reel (TR)
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1N4570AUR-1/TR 1N4570AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: TEMPERATURE COMPENSATED
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 100 Ohms
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Tape & Reel (TR)
Operating Temperature: -65°C ~ 175°C
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160+10.51 EUR
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1N4570AUR-1/TR 1N4570AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: TEMPERATURE COMPENSATED
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 100 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Cut Tape (CT)
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2+11.3 EUR
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1N457AUR-1/TR 1N457AUR-1/TR Microchip Technology Description: SIGNAL OR COMPUTER DIODE
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N457AUR-1/TR 1N457AUR-1/TR Microchip Technology Description: SIGNAL OR COMPUTER DIODE
Packaging: Cut Tape (CT)
Part Status: Active
Produkt ist nicht verfügbar
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1N4582AUR-1/TR 1N4582AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: DIODE ZENER 500MW DO213AA
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 25 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N4582AUR-1/TR 1N4582AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: DIODE ZENER 500MW DO213AA
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 25 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Cut Tape (CT)
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1N4580AUR-1/TR 1N4580AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: DIODE ZENER 500MW DO213AA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 25 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
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1N4580AUR-1/TR 1N4580AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: DIODE ZENER 500MW DO213AA
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 25 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Cut Tape (CT)
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1N4581AUR-1/TR 1N4581AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: DIODE ZENER 500MW DO213AA
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 25 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Tape & Reel (TR)
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1N4581AUR-1/TR 1N4581AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: DIODE ZENER 500MW DO213AA
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 25 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Cut Tape (CT)
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JANTXV1N4583AUR-1/TR JANTXV1N4583AUR-1/TR Microchip Technology Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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JANHCA1N4580A JANHCA1N4580A Microchip Technology 14809-military-qualified-die-chip Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Produkt ist nicht verfügbar
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JAN1N5615 JAN1N5615 Microchip Technology 11061-sd46a-datasheet Description: DIODE GEN PURP 200V 1A AXIAL
Qualification: MIL-PRF-19500/429
Grade: Military
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
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JANTX1N5615/TR JANTX1N5615/TR Microchip Technology Description: DIODE GEN PURP 200V 1A A-PAK
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/429
Grade: Military
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JAN1N5615/TR JAN1N5615/TR Microchip Technology Description: DIODE GEN PURP 200V 1A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/429
Grade: Military
Produkt ist nicht verfügbar
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JANTXV1N5615/TR JANTXV1N5615/TR Microchip Technology Description: DIODE GEN PURP 200V 1A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/429
Grade: Military
Produkt ist nicht verfügbar
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JAN1N5615US/TR JAN1N5615US/TR Microchip Technology Description: DIODE GEN PURP 200V 1A D-5A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/429
Grade: Military
Produkt ist nicht verfügbar
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JANS1N5615/TR JANS1N5615/TR Microchip Technology Description: DIODE GEN PURP 200V 1A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/429
Grade: Military
Produkt ist nicht verfügbar
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JANTXV1N5615US/TR JANTXV1N5615US/TR Microchip Technology Description: DIODE GEN PURP 200V 1A D-5A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/429
Grade: Military
Produkt ist nicht verfügbar
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1N5615E3 1N5615E3 Microchip Technology Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Produkt ist nicht verfügbar
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1N5615/TR 1N5615/TR Microchip Technology 10968-sa7-47-datasheet Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Produkt ist nicht verfügbar
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1N5615E3/TR 1N5615E3/TR Microchip Technology Description: DIODE GEN PURP 200V 1A A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JANTX1N5615US/TR JANTX1N5615US/TR Microchip Technology Description: DIODE GEN PURP 200V 1A A SQ-MELF
Qualification: MIL-PRF-19500/429
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JANS1N5615US/TR JANS1N5615US/TR Microchip Technology Description: DIODE GEN PURP 200V 1A A SQ-MELF
Qualification: MIL-PRF-19500/429
Grade: Military
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, SQ-MELF
Produkt ist nicht verfügbar
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JANTX1N5615US JANTX1N5615US Microchip Technology 150_1N5615US%20thru%201N5623US.pdf Description: DIODE GEN PURP 200V 1A A SQ-MELF
Qualification: MIL-PRF-19500/429
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX1N4944/TR JANTX1N4944/TR Microchip Technology 129281-lds-0295-datasheet Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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JAN1N4944/TR JAN1N4944/TR Microchip Technology 129281-lds-0295-datasheet Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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JANTXV1N4944/TR JANTXV1N4944/TR Microchip Technology 129281-lds-0295-datasheet Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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1N4944/TR 1N4944/TR Microchip Technology 129281-lds-0295-datasheet Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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UTR21 UTR21 Microchip Technology Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
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UTR21/TR UTR21/TR Microchip Technology Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Produkt ist nicht verfügbar
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ATTINY827-MFR ATTINY827-MFR Microchip Technology ATtiny424-426-427-824-826-827-DataSheet-DS40002311A.pdf Description: IC MCU 8BIT 8KB FLASH 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 15x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-VQFN (4x4)
Part Status: Active
Number of I/O: 22
DigiKey Programmable: Not Verified
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9+2.34 EUR
25+2.14 EUR
100+1.93 EUR
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ATTINY827-MUR ATTINY827-MUR Microchip Technology ATtiny424-426-427-824-826-827-DataSheet-DS40002311A.pdf Description: IC MCU 8BIT 8KB FLASH 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 15x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-VQFN (4x4)
Part Status: Active
Number of I/O: 22
DigiKey Programmable: Not Verified
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10+2.09 EUR
25+1.9 EUR
100+1.74 EUR
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MASMLJ6.5CAe3 10563-msml-datasheet
MASMLJ6.5CAe3
Hersteller: Microchip Technology
Description: TVS DIODE 6.5VWM 11.2VC DO214AB
Bidirectional Channels: 1
Supplier Device Package: DO-214AB
Voltage - Reverse Standoff (Typ): 6.5V
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 11.2V
Voltage - Breakdown (Min): 7.22V
Current - Peak Pulse (10/1000µs): 267.9A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Bulk
Produkt ist nicht verfügbar
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MASMLJ64CAe3 10563-msml-datasheet
MASMLJ64CAe3
Hersteller: Microchip Technology
Description: TVS DIODE 64VWM 103VC DO214AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 103V
Voltage - Breakdown (Min): 71.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB
Package / Case: DO-214AB, SMC
Packaging: Bulk
Voltage - Reverse Standoff (Typ): 64V
Current - Peak Pulse (10/1000µs): 29.2A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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MASMLJ8.0CAe3 10563-msml-datasheet
MASMLJ8.0CAe3
Hersteller: Microchip Technology
Description: TVS DIODE 8VWM 13.6VC DO214AB
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 13.6V
Voltage - Breakdown (Min): 8.89V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB
Voltage - Reverse Standoff (Typ): 8V
Current - Peak Pulse (10/1000µs): 220.6A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Produkt ist nicht verfügbar
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MLCE130Ae3 9498-mlce-pdf
Hersteller: Microchip Technology
Description: TVS DIODE 130VWM 209VC CASE-1
Voltage - Breakdown (Min): 144V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 130V
Current - Peak Pulse (10/1000µs): 7.2A
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500
Grade: Military
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 209V
Produkt ist nicht verfügbar
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1N4753AUR/TR 1N4728UR-1N4764AUR.pdf
1N4753AUR/TR
Hersteller: Microchip Technology
Description: DIODE ZENER 36V 1W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
Produkt ist nicht verfügbar
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DSC6101HA2B-072.5000T DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf
DSC6101HA2B-072.5000T
Hersteller: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-125C 25
Base Resonator: MEMS
Frequency: 72.5 MHz
Part Status: Active
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 3mA (Typ)
Ratings: AEC-Q100
Voltage - Supply: 1.71V ~ 3.63V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 125°C
Type: XO (Standard)
Function: Enable/Disable
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: 4-VFLGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DSC6331HL1AB-072.5000T DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf
Hersteller: Microchip Technology
Description: MEMS OSC SMD
Packaging: Tape & Reel (TR)
Base Resonator: MEMS
Frequency: 72.5 MHz
Part Status: Active
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 3mA (Typ)
Spread Spectrum Bandwidth: ±0.25%, Center Spread
Voltage - Supply: 1.71V ~ 3.63V
Frequency Stability: ±50ppm
Operating Temperature: -40°C ~ 105°C
Type: XO (Standard)
Function: Standby (Power Down)
Output: LVCMOS
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: 4-VFLGA
Produkt ist nicht verfügbar
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DSC6101HA2B-072.5000 DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf
DSC6101HA2B-072.5000
Hersteller: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-125C 25
Base Resonator: MEMS
Frequency: 72.5 MHz
Part Status: Active
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 3mA (Typ)
Ratings: AEC-Q100
Voltage - Supply: 1.71V ~ 3.63V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 125°C
Type: XO (Standard)
Function: Enable/Disable
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: 4-VFLGA
Packaging: Bag
Produkt ist nicht verfügbar
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DSC6101HL2B-072.5000 DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf
DSC6101HL2B-072.5000
Hersteller: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-105C 25
Frequency: 72.5 MHz
Part Status: Active
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 3mA (Typ)
Ratings: AEC-Q100
Voltage - Supply: 1.71V ~ 3.63V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 105°C
Type: XO (Standard)
Function: Enable/Disable
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: 4-VFLGA
Packaging: Bag
Base Resonator: MEMS
Produkt ist nicht verfügbar
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DSC6102HL2B-072.5000T DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf
Hersteller: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-105C 25
Base Resonator: MEMS
Frequency: 72.5 MHz
Part Status: Active
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 3mA (Typ)
Ratings: AEC-Q100
Voltage - Supply: 1.71V ~ 3.63V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 105°C
Type: XO (Standard)
Function: Enable/Disable
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: 4-VFLGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DSC6102HL2B-072.5000 DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf
Hersteller: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-105C 25
Base Resonator: MEMS
Frequency: 72.5 MHz
Part Status: Active
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 3mA (Typ)
Ratings: AEC-Q100
Voltage - Supply: 1.71V ~ 3.63V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 105°C
Type: XO (Standard)
Function: Enable/Disable
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: 4-VFLGA
Packaging: Bag
Produkt ist nicht verfügbar
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DSC6331HL1AB-072.5000 DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf
Hersteller: Microchip Technology
Description: MEMS OSC SMD
Base Resonator: MEMS
Frequency: 72.5 MHz
Part Status: Active
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 3mA (Typ)
Spread Spectrum Bandwidth: ±0.25%, Center Spread
Voltage - Supply: 1.71V ~ 3.63V
Frequency Stability: ±50ppm
Operating Temperature: -40°C ~ 105°C
Type: XO (Standard)
Function: Standby (Power Down)
Output: LVCMOS
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: 4-VFLGA
Packaging: Bag
Produkt ist nicht verfügbar
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DSC6101HL2B-072.5000T DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf
DSC6101HL2B-072.5000T
Hersteller: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-105C 25
Base Resonator: MEMS
Frequency: 72.5 MHz
Part Status: Active
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 3mA (Typ)
Ratings: AEC-Q100
Voltage - Supply: 1.71V ~ 3.63V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 105°C
Type: XO (Standard)
Function: Enable/Disable
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: 4-VFLGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ATSAM4SD32CA-CFUR Atmel-11100-32-bit%20Cortex-M4-Microcontroller-SAM4S_Datasheet.pdf
ATSAM4SD32CA-CFUR
Hersteller: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 100VFBGA
Packaging: Cut Tape (CT)
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-VFBGA (7x7)
Part Status: Active
Number of I/O: 79
DigiKey Programmable: Not Verified
auf Bestellung 7224 Stücke:
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1+23.86 EUR
25+23 EUR
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1N4733AURE3/TR 1N4728UR-1N4764AUR.pdf
1N4733AURE3/TR
Hersteller: Microchip Technology
Description: DIODE ZENER 5.1V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
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1N4733AURE3/TR 1N4728UR-1N4764AUR.pdf
1N4733AURE3/TR
Hersteller: Microchip Technology
Description: DIODE ZENER 5.1V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 136 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.03 EUR
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MPFS-ICICLE-KIT-ES-FP5
Hersteller: Microchip Technology
Description: DEVELOPMENT KIT
Packaging: Bulk
For Use With/Related Products: MPFS250
Type: FPGA + MCU/MPU SoC
Contents: Board(s), Cable(s), Power Supply
Platform: PolarFire SoC FPGA SiFive RISC-V Icicle
Part Status: Obsolete
Produkt ist nicht verfügbar
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MIC6315-46D4UY TR MCRL-S-A0000040620-1.pdf?t.download=true&u=5oefqw
MIC6315-46D4UY TR
Hersteller: Microchip Technology
Description: OPEN-DRAIN MICROPROCESSOR RESET
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Power Supply Monitor
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 1.1s Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-143
Part Status: Active
DigiKey Programmable: Not Verified
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AnzahlPrivatkunde
1615+0.46 EUR
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1N4578AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
Hersteller: Microchip Technology
Description: TEMPERATURE COMPENSATED
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 50 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N4578AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
Hersteller: Microchip Technology
Description: TEMPERATURE COMPENSATED
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 50 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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1N4576AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4576AUR-1/TR
Hersteller: Microchip Technology
Description: TEMPERATURE COMPENSATED
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 50 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Tape & Reel (TR)
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
110+15.17 EUR
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1N4576AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4576AUR-1/TR
Hersteller: Microchip Technology
Description: TEMPERATURE COMPENSATED
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 50 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Cut Tape (CT)
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.34 EUR
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1N4577AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4577AUR-1/TR
Hersteller: Microchip Technology
Description: TEMPERATURE COMPENSATED
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 50 Ohms
Operating Temperature: -65°C ~ 175°C
Produkt ist nicht verfügbar
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1N4577AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4577AUR-1/TR
Hersteller: Microchip Technology
Description: TEMPERATURE COMPENSATED
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 50 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Cut Tape (CT)
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.84 EUR
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1N4571AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4571AUR-1/TR
Hersteller: Microchip Technology
Description: TEMPERATURE COMPENSATED
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 100 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Tape & Reel (TR)
auf Bestellung 147 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
147+11.42 EUR
Mindestbestellmenge: 147 Stücke
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1N4571AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4571AUR-1/TR
Hersteller: Microchip Technology
Description: TEMPERATURE COMPENSATED
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 100 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Cut Tape (CT)
auf Bestellung 147 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.32 EUR
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1N4579AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4579AUR-1/TR
Hersteller: Microchip Technology
Description: DIODE ZENER 500MW DO213AA
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 50 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N4570AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4570AUR-1/TR
Hersteller: Microchip Technology
Description: TEMPERATURE COMPENSATED
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 100 Ohms
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Tape & Reel (TR)
Operating Temperature: -65°C ~ 175°C
auf Bestellung 160 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
160+10.51 EUR
Mindestbestellmenge: 160 Stücke
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1N4570AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4570AUR-1/TR
Hersteller: Microchip Technology
Description: TEMPERATURE COMPENSATED
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 100 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Cut Tape (CT)
auf Bestellung 160 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.3 EUR
Mindestbestellmenge: 2 Stücke
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1N457AUR-1/TR
1N457AUR-1/TR
Hersteller: Microchip Technology
Description: SIGNAL OR COMPUTER DIODE
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 122 Stücke
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1N457AUR-1/TR
1N457AUR-1/TR
Hersteller: Microchip Technology
Description: SIGNAL OR COMPUTER DIODE
Packaging: Cut Tape (CT)
Part Status: Active
Produkt ist nicht verfügbar
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1N4582AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4582AUR-1/TR
Hersteller: Microchip Technology
Description: DIODE ZENER 500MW DO213AA
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 25 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 105 Stücke
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1N4582AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4582AUR-1/TR
Hersteller: Microchip Technology
Description: DIODE ZENER 500MW DO213AA
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 25 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Cut Tape (CT)
auf Bestellung 85 Stücke:
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1N4580AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4580AUR-1/TR
Hersteller: Microchip Technology
Description: DIODE ZENER 500MW DO213AA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 25 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
auf Bestellung 175 Stücke:
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175+11.54 EUR
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1N4580AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4580AUR-1/TR
Hersteller: Microchip Technology
Description: DIODE ZENER 500MW DO213AA
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 25 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Cut Tape (CT)
auf Bestellung 175 Stücke:
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2+13.57 EUR
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1N4581AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4581AUR-1/TR
Hersteller: Microchip Technology
Description: DIODE ZENER 500MW DO213AA
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 25 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Tape & Reel (TR)
auf Bestellung 108 Stücke:
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AnzahlPrivatkunde
108+11.54 EUR
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1N4581AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4581AUR-1/TR
Hersteller: Microchip Technology
Description: DIODE ZENER 500MW DO213AA
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 25 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Cut Tape (CT)
auf Bestellung 108 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.57 EUR
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JANTXV1N4583AUR-1/TR
JANTXV1N4583AUR-1/TR
Hersteller: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Produkt ist nicht verfügbar
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JANHCA1N4580A 14809-military-qualified-die-chip
JANHCA1N4580A
Hersteller: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Produkt ist nicht verfügbar
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JAN1N5615 11061-sd46a-datasheet
JAN1N5615
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A AXIAL
Qualification: MIL-PRF-19500/429
Grade: Military
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
auf Bestellung 139 Stücke:
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AnzahlPrivatkunde
3+8.08 EUR
100+7.51 EUR
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JANTX1N5615/TR
JANTX1N5615/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A A-PAK
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/429
Grade: Military
Produkt ist nicht verfügbar
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JAN1N5615/TR
JAN1N5615/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/429
Grade: Military
Produkt ist nicht verfügbar
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JANTXV1N5615/TR
JANTXV1N5615/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/429
Grade: Military
Produkt ist nicht verfügbar
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JAN1N5615US/TR
JAN1N5615US/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A D-5A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/429
Grade: Military
Produkt ist nicht verfügbar
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JANS1N5615/TR
JANS1N5615/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/429
Grade: Military
Produkt ist nicht verfügbar
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JANTXV1N5615US/TR
JANTXV1N5615US/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A D-5A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/429
Grade: Military
Produkt ist nicht verfügbar
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1N5615E3
1N5615E3
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Produkt ist nicht verfügbar
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1N5615/TR 10968-sa7-47-datasheet
1N5615/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Produkt ist nicht verfügbar
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1N5615E3/TR
1N5615E3/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JANTX1N5615US/TR
JANTX1N5615US/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A A SQ-MELF
Qualification: MIL-PRF-19500/429
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JANS1N5615US/TR
JANS1N5615US/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A A SQ-MELF
Qualification: MIL-PRF-19500/429
Grade: Military
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, SQ-MELF
Produkt ist nicht verfügbar
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JANTX1N5615US 150_1N5615US%20thru%201N5623US.pdf
JANTX1N5615US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A A SQ-MELF
Qualification: MIL-PRF-19500/429
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX1N4944/TR 129281-lds-0295-datasheet
JANTX1N4944/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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JAN1N4944/TR 129281-lds-0295-datasheet
JAN1N4944/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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JANTXV1N4944/TR 129281-lds-0295-datasheet
JANTXV1N4944/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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1N4944/TR 129281-lds-0295-datasheet
1N4944/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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UTR21
UTR21
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Produkt ist nicht verfügbar
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UTR21/TR
UTR21/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Produkt ist nicht verfügbar
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ATTINY827-MFR ATtiny424-426-427-824-826-827-DataSheet-DS40002311A.pdf
ATTINY827-MFR
Hersteller: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 15x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-VQFN (4x4)
Part Status: Active
Number of I/O: 22
DigiKey Programmable: Not Verified
auf Bestellung 11417 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.34 EUR
25+2.14 EUR
100+1.93 EUR
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ATTINY827-MUR ATtiny424-426-427-824-826-827-DataSheet-DS40002311A.pdf
ATTINY827-MUR
Hersteller: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 15x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-VQFN (4x4)
Part Status: Active
Number of I/O: 22
DigiKey Programmable: Not Verified
auf Bestellung 5954 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.09 EUR
25+1.9 EUR
100+1.74 EUR
Mindestbestellmenge: 10 Stücke
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