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WP34C2R4NFEI-400B2 Microchip Technology 2110882_WinPath3_pb_127961.pdf Description: WP3 4C2R4 400 MHZ, LF BALLS, PBF
Supplier Device Package: 896-B1BGA (31x31)
Core Processor: MIPS32® 34Kc™
Applications: Network Processor
Program Memory Type: SRAM
Interface: I2C, RMII, UART
Mounting Type: Surface Mount
Package / Case: 896-BGA
Packaging: Tray
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WP32C2M6NELI-450B2 Microchip Technology Description: WP3 2C2M6 450 MHZ, LF BALLS, PBF
Supplier Device Package: 896-B1BGA (31x31)
Core Processor: MIPS32® 34Kc™
Applications: Network Processor
Program Memory Type: SRAM
Interface: I2C, RMII, UART
Mounting Type: Surface Mount
Package / Case: 896-BGA
Packaging: Tray
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SAM9X75D2GT-I/4TB SAM9X75D2GT-I/4TB Microchip Technology SAM9X75-SiP-Data-Sheet-DS60001827.pdf Description: ARM926 MPU,2GBIT DDR3L,MIPI,LVDS
Additional Interfaces: CANbus, EBI/EMI, I2C, MMC/SD/SDIO, QSPI, SPI, UART/USART, USB
Security Features: AES, Boot Security, Cryptography, DES, SHA, TRNG
Display & Interface Controllers: LCD, LVDS, MIPI/DSI
Graphics Acceleration: No
RAM Controllers: DDR2, DDR3, DDR3L, SDRAM
Number of Cores/Bus Width: 1 Core, 32-Bit
USB: USB (3)
Ethernet: 10/100/1000Mbps (1)
Supplier Device Package: 243-TFBGA (16x16)
Voltage - I/O: 1.8V, 2.5V, 3.3V
Core Processor: ARM926EJ-S
Operating Temperature: -40°C ~ 85°C (TA)
Speed: 800MHz
Mounting Type: Surface Mount
Package / Case: 243-LFBGA
Packaging: Tape & Reel (TR)
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SAM9X75D2GT-I/4TB SAM9X75D2GT-I/4TB Microchip Technology SAM9X75-SiP-Data-Sheet-DS60001827.pdf Description: ARM926 MPU,2GBIT DDR3L,MIPI,LVDS
Additional Interfaces: CANbus, EBI/EMI, I2C, MMC/SD/SDIO, QSPI, SPI, UART/USART, USB
Security Features: AES, Boot Security, Cryptography, DES, SHA, TRNG
Display & Interface Controllers: LCD, LVDS, MIPI/DSI
Graphics Acceleration: No
RAM Controllers: DDR2, DDR3, DDR3L, SDRAM
Number of Cores/Bus Width: 1 Core, 32-Bit
USB: USB (3)
Ethernet: 10/100/1000Mbps (1)
Supplier Device Package: 243-TFBGA (16x16)
Voltage - I/O: 1.8V, 2.5V, 3.3V
Core Processor: ARM926EJ-S
Operating Temperature: -40°C ~ 85°C (TA)
Speed: 800MHz
Mounting Type: Surface Mount
Package / Case: 243-LFBGA
Packaging: Cut Tape (CT)
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SAMA7G54D2GT-I/4UB SAMA7G54D2GT-I/4UB Microchip Technology SAMA7G5-SIP-Series-Data-Sheet-DS50003577.pdf Description: CORTEX-A7 MPU, 2GBIT DDR3, BGA,I
Packaging: Tape & Reel (TR)
Package / Case: 427-TFBGA
Mounting Type: Surface Mount
Speed: 1GHz
Operating Temperature: -40°C ~ 105°C (TJ)
Core Processor: ARM® Cortex®-A7
Voltage - I/O: 1.35V
Supplier Device Package: 427-TFBGA (21x18)
Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
Co-Processors/DSP: Multimedia; NEON™ MPE
RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
Graphics Acceleration: No
Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512
Additional Interfaces: EBI, I2C, SPI
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SAMA7G54D2GT-I/4UB SAMA7G54D2GT-I/4UB Microchip Technology SAMA7G5-SIP-Series-Data-Sheet-DS50003577.pdf Description: CORTEX-A7 MPU, 2GBIT DDR3, BGA,I
Packaging: Cut Tape (CT)
Package / Case: 427-TFBGA
Mounting Type: Surface Mount
Speed: 1GHz
Operating Temperature: -40°C ~ 105°C (TJ)
Core Processor: ARM® Cortex®-A7
Voltage - I/O: 1.35V
Supplier Device Package: 427-TFBGA (21x18)
Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
Co-Processors/DSP: Multimedia; NEON™ MPE
RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
Graphics Acceleration: No
Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512
Additional Interfaces: EBI, I2C, SPI
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M15KP90CA/TR M15KP90CA/TR Microchip Technology Description: TVS 90V 5% 15000W BI
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD15KP90CA MAPLAD15KP90CA Microchip Technology 9522-mplad15kp-datasheet Description: TVS DIODE 90VWM 146VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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UES1001 UES1001 Microchip Technology Description: DIODE GEN PURP 50V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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UES1001/TR UES1001/TR Microchip Technology Description: DIODE GEN PURP 50V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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UES1002/TR UES1002/TR Microchip Technology Description: DIODE GEN PURP 100V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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UES1002SM UES1002SM Microchip Technology Description: DIODE GEN PURP A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Supplier Device Package: A, Axial
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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UES1003SM-1 UES1003SM-1 Microchip Technology Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
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UES1002SM-1 UES1002SM-1 Microchip Technology Description: DIODE GEN PURP 100V 2A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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UES1001SM UES1001SM Microchip Technology Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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UES1003SM/TR Microchip Technology Description: RECTIFIER UFR,FRR
Packaging: Tape & Reel (TR)
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UES1002SM/TR UES1002SM/TR Microchip Technology Description: DIODE GEN PURP A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Supplier Device Package: A, Axial
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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UES1002SM-1/TR UES1002SM-1/TR Microchip Technology Description: DIODE GEN PURP 100V 2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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UES1001SM/TR UES1001SM/TR Microchip Technology Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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UES1003SM-1/TR UES1003SM-1/TR Microchip Technology Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
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UES1003 UES1003 Microchip Technology Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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UES1003/TR UES1003/TR Microchip Technology Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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MPLAD7.5KP13A/TR Microchip Technology Description: 13V, 5%, 8000W, UNI, MINI-PLAD,
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 349A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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M5KP13A M5KP13A Microchip Technology 9461-m5kp-pdf Description: TVS DIODE 13VWM 21.5VC DO204AR
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: DO-204AR
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 232A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Packaging: Bulk
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M5KP13A/TR Microchip Technology Description: TVS 13V 5% 5000W UNI
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: P600
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 233A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
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AT90USB82-16MUR AT90USB82-16MUR Microchip Technology 7707S.pdf Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
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AT90USB82-16MUR AT90USB82-16MUR Microchip Technology 7707S.pdf Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
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AT90USB82-16MU AT90USB82-16MU Microchip Technology 7707S.pdf description Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
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2N2988 2N2988 Microchip Technology Description: TRANS PNP 100V 1A TO-5AA
Power - Max: 5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-5AA
Vce Saturation (Max) @ Ib, Ic: 800mV @ 20µA, 200µA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
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2N2992 2N2992 Microchip Technology Description: POWER BJT
Power - Max: 5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-5AA
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
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2N2990 2N2990 Microchip Technology Description: TRANS NPN 100V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
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2N2994 2N2994 Microchip Technology Description: POWER BJT
Power - Max: 5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-5AA
Vce Saturation (Max) @ Ib, Ic: 3V @ 50µA, 200µA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
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2N2324 Microchip Technology 6024-2n2323-datasheet Description: SCR 100V 200UA TO5
Qualification: MIL-PRF-19500/276
Voltage - Off State: 100 V
Grade: Military
Supplier Device Package: TO-5
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 2 mA
Operating Temperature: -65°C ~ 125°C
SCR Type: Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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2N2324A Microchip Technology 6024-2n2323-datasheet Description: SCR 100V 20UA TO5
Qualification: MIL-PRF-19500/276
Voltage - Off State: 100 V
Grade: Military
Supplier Device Package: TO-5
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - On State (It (AV)) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Hold (Ih) (Max): 2 mA
Operating Temperature: -65°C ~ 125°C
SCR Type: Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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APT100GF60JU2 APT100GF60JU2 Microchip Technology APT100GF60JU2.pdf Description: IGBT MOD 600V 120A 416W SOT-227
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 416 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 120 A
IGBT Type: NPT
Supplier Device Package: SOT-227
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Bulk
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2N3749 2N3749 Microchip Technology Description: TRANS NPN 80V 5A TO111
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
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Jantxv2N3749 Microchip Technology 132818-lds-0328-datasheet Description: TRANS NPN 80V 5A TO111
Qualification: MIL-PRF-19500/315
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 5 A
Grade: Military
Supplier Device Package: TO-111
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
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2N2892 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
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2N2877 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 30 W
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2N3746 Microchip Technology Description: POWER BJT
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
Transistor Type: PNP
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
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2N3744 Microchip Technology Description: POWER BJT
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
Transistor Type: PNP
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
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2N3751 Microchip Technology Description: POWER BJT
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
Transistor Type: PNP
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
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2N5326 Microchip Technology Description: POWER BJT
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 1mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
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2N5328 Microchip Technology Description: POWER BJT
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: TO-111
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
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2N5411 Microchip Technology Description: POWER BJT
Power - Max: 52 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
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2N5410 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 52 W
Produkt ist nicht verfügbar
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DSC1001AI1-049.1520 DSC1001AI1-049.1520 Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 49.1520MHZ CMOS SMD
Base Resonator: MEMS
Frequency: 49.152 MHz
Height - Seated (Max): 0.035" (0.90mm)
Current - Supply (Max): 10.5mA
Ratings: AEC-Q100
Voltage - Supply: 1.7V ~ 3.6V
Frequency Stability: ±50ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Standby (Power Down)
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Package / Case: 4-VDFN Exposed Pad
Packaging: Strip
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24CS512T-I/Q4B 24CS512T-I/Q4B Microchip Technology 24CS512_2021.pdf Description: IC EEPROM 512KBIT I2C 8UDFN
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-UDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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24CS512T-I/Q4B 24CS512T-I/Q4B Microchip Technology 24CS512_2021.pdf Description: IC EEPROM 512KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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24CS512T-I/OT 24CS512T-I/OT Microchip Technology WriteProtectionDS20005769.pdf Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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24CS512T-I/OT 24CS512T-I/OT Microchip Technology WriteProtectionDS20005769.pdf Description: IC EEPROM 512KBIT I2C SOT23-5
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: SOT-23-5
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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24CS512T-I/MS 24CS512T-I/MS Microchip Technology 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf Description: IC EEPROM 512KBIT I2C 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
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24CS512T-I/MS 24CS512T-I/MS Microchip Technology 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf Description: IC EEPROM 512KBIT I2C 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
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24CS512T-E/Q4B 24CS512T-E/Q4B Microchip Technology 24CS512_2021.pdf Description: IC EEPROM 512KBIT I2C 8UDFN
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-UDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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24CS512T-E/Q4B 24CS512T-E/Q4B Microchip Technology 24CS512_2021.pdf Description: IC EEPROM 512KBIT I2C 8UDFN
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-UDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
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24CS512T-E/SN 24CS512T-E/SN Microchip Technology 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf Description: IC EEPROM 512KBIT I2C 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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24CS512T-E/SN 24CS512T-E/SN Microchip Technology 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf Description: IC EEPROM 512KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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24CS512-E/SN 24CS512-E/SN Microchip Technology 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf Description: IC EEPROM 512KBIT I2C 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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24CS512T-E/OT 24CS512T-E/OT Microchip Technology 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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24CS512T-E/OT 24CS512T-E/OT Microchip Technology 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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WP34C2R4NFEI-400B2 2110882_WinPath3_pb_127961.pdf
Hersteller: Microchip Technology
Description: WP3 4C2R4 400 MHZ, LF BALLS, PBF
Supplier Device Package: 896-B1BGA (31x31)
Core Processor: MIPS32® 34Kc™
Applications: Network Processor
Program Memory Type: SRAM
Interface: I2C, RMII, UART
Mounting Type: Surface Mount
Package / Case: 896-BGA
Packaging: Tray
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WP32C2M6NELI-450B2
Hersteller: Microchip Technology
Description: WP3 2C2M6 450 MHZ, LF BALLS, PBF
Supplier Device Package: 896-B1BGA (31x31)
Core Processor: MIPS32® 34Kc™
Applications: Network Processor
Program Memory Type: SRAM
Interface: I2C, RMII, UART
Mounting Type: Surface Mount
Package / Case: 896-BGA
Packaging: Tray
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SAM9X75D2GT-I/4TB SAM9X75-SiP-Data-Sheet-DS60001827.pdf
SAM9X75D2GT-I/4TB
Hersteller: Microchip Technology
Description: ARM926 MPU,2GBIT DDR3L,MIPI,LVDS
Additional Interfaces: CANbus, EBI/EMI, I2C, MMC/SD/SDIO, QSPI, SPI, UART/USART, USB
Security Features: AES, Boot Security, Cryptography, DES, SHA, TRNG
Display & Interface Controllers: LCD, LVDS, MIPI/DSI
Graphics Acceleration: No
RAM Controllers: DDR2, DDR3, DDR3L, SDRAM
Number of Cores/Bus Width: 1 Core, 32-Bit
USB: USB (3)
Ethernet: 10/100/1000Mbps (1)
Supplier Device Package: 243-TFBGA (16x16)
Voltage - I/O: 1.8V, 2.5V, 3.3V
Core Processor: ARM926EJ-S
Operating Temperature: -40°C ~ 85°C (TA)
Speed: 800MHz
Mounting Type: Surface Mount
Package / Case: 243-LFBGA
Packaging: Tape & Reel (TR)
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SAM9X75D2GT-I/4TB SAM9X75-SiP-Data-Sheet-DS60001827.pdf
SAM9X75D2GT-I/4TB
Hersteller: Microchip Technology
Description: ARM926 MPU,2GBIT DDR3L,MIPI,LVDS
Additional Interfaces: CANbus, EBI/EMI, I2C, MMC/SD/SDIO, QSPI, SPI, UART/USART, USB
Security Features: AES, Boot Security, Cryptography, DES, SHA, TRNG
Display & Interface Controllers: LCD, LVDS, MIPI/DSI
Graphics Acceleration: No
RAM Controllers: DDR2, DDR3, DDR3L, SDRAM
Number of Cores/Bus Width: 1 Core, 32-Bit
USB: USB (3)
Ethernet: 10/100/1000Mbps (1)
Supplier Device Package: 243-TFBGA (16x16)
Voltage - I/O: 1.8V, 2.5V, 3.3V
Core Processor: ARM926EJ-S
Operating Temperature: -40°C ~ 85°C (TA)
Speed: 800MHz
Mounting Type: Surface Mount
Package / Case: 243-LFBGA
Packaging: Cut Tape (CT)
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1+38.07 EUR
25+31.73 EUR
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SAMA7G54D2GT-I/4UB SAMA7G5-SIP-Series-Data-Sheet-DS50003577.pdf
SAMA7G54D2GT-I/4UB
Hersteller: Microchip Technology
Description: CORTEX-A7 MPU, 2GBIT DDR3, BGA,I
Packaging: Tape & Reel (TR)
Package / Case: 427-TFBGA
Mounting Type: Surface Mount
Speed: 1GHz
Operating Temperature: -40°C ~ 105°C (TJ)
Core Processor: ARM® Cortex®-A7
Voltage - I/O: 1.35V
Supplier Device Package: 427-TFBGA (21x18)
Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
Co-Processors/DSP: Multimedia; NEON™ MPE
RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
Graphics Acceleration: No
Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512
Additional Interfaces: EBI, I2C, SPI
Produkt ist nicht verfügbar
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SAMA7G54D2GT-I/4UB SAMA7G5-SIP-Series-Data-Sheet-DS50003577.pdf
SAMA7G54D2GT-I/4UB
Hersteller: Microchip Technology
Description: CORTEX-A7 MPU, 2GBIT DDR3, BGA,I
Packaging: Cut Tape (CT)
Package / Case: 427-TFBGA
Mounting Type: Surface Mount
Speed: 1GHz
Operating Temperature: -40°C ~ 105°C (TJ)
Core Processor: ARM® Cortex®-A7
Voltage - I/O: 1.35V
Supplier Device Package: 427-TFBGA (21x18)
Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
Co-Processors/DSP: Multimedia; NEON™ MPE
RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
Graphics Acceleration: No
Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512
Additional Interfaces: EBI, I2C, SPI
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AnzahlPreis
1+23.43 EUR
25+21.48 EUR
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M15KP90CA/TR
M15KP90CA/TR
Hersteller: Microchip Technology
Description: TVS 90V 5% 15000W BI
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MAPLAD15KP90CA 9522-mplad15kp-datasheet
MAPLAD15KP90CA
Hersteller: Microchip Technology
Description: TVS DIODE 90VWM 146VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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UES1001
UES1001
Hersteller: Microchip Technology
Description: DIODE GEN PURP 50V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Produkt ist nicht verfügbar
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UES1001/TR
UES1001/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 50V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Produkt ist nicht verfügbar
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UES1002/TR
UES1002/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
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UES1002SM
UES1002SM
Hersteller: Microchip Technology
Description: DIODE GEN PURP A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Supplier Device Package: A, Axial
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Produkt ist nicht verfügbar
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UES1003SM-1
UES1003SM-1
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Produkt ist nicht verfügbar
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UES1002SM-1
UES1002SM-1
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 2A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
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UES1001SM
UES1001SM
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Produkt ist nicht verfügbar
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UES1003SM/TR
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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UES1002SM/TR
UES1002SM/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Supplier Device Package: A, Axial
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Produkt ist nicht verfügbar
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UES1002SM-1/TR
UES1002SM-1/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
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UES1001SM/TR
UES1001SM/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Produkt ist nicht verfügbar
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UES1003SM-1/TR
UES1003SM-1/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Produkt ist nicht verfügbar
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UES1003
UES1003
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Produkt ist nicht verfügbar
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UES1003/TR
UES1003/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Produkt ist nicht verfügbar
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MPLAD7.5KP13A/TR
Hersteller: Microchip Technology
Description: 13V, 5%, 8000W, UNI, MINI-PLAD,
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 349A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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M5KP13A 9461-m5kp-pdf
M5KP13A
Hersteller: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC DO204AR
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: DO-204AR
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 232A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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M5KP13A/TR
Hersteller: Microchip Technology
Description: TVS 13V 5% 5000W UNI
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: P600
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 233A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AT90USB82-16MUR 7707S.pdf
AT90USB82-16MUR
Hersteller: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT90USB82-16MUR 7707S.pdf
AT90USB82-16MUR
Hersteller: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
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4+5.17 EUR
25+4.76 EUR
100+4.32 EUR
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AT90USB82-16MU description 7707S.pdf
AT90USB82-16MU
Hersteller: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
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AnzahlPreis
4+4.96 EUR
25+4.88 EUR
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2N2988
2N2988
Hersteller: Microchip Technology
Description: TRANS PNP 100V 1A TO-5AA
Power - Max: 5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-5AA
Vce Saturation (Max) @ Ib, Ic: 800mV @ 20µA, 200µA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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2N2992
2N2992
Hersteller: Microchip Technology
Description: POWER BJT
Power - Max: 5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-5AA
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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2N2990
2N2990
Hersteller: Microchip Technology
Description: TRANS NPN 100V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
Produkt ist nicht verfügbar
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2N2994
2N2994
Hersteller: Microchip Technology
Description: POWER BJT
Power - Max: 5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-5AA
Vce Saturation (Max) @ Ib, Ic: 3V @ 50µA, 200µA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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2N2324 6024-2n2323-datasheet
Hersteller: Microchip Technology
Description: SCR 100V 200UA TO5
Qualification: MIL-PRF-19500/276
Voltage - Off State: 100 V
Grade: Military
Supplier Device Package: TO-5
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 2 mA
Operating Temperature: -65°C ~ 125°C
SCR Type: Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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2N2324A 6024-2n2323-datasheet
Hersteller: Microchip Technology
Description: SCR 100V 20UA TO5
Qualification: MIL-PRF-19500/276
Voltage - Off State: 100 V
Grade: Military
Supplier Device Package: TO-5
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - On State (It (AV)) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Hold (Ih) (Max): 2 mA
Operating Temperature: -65°C ~ 125°C
SCR Type: Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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APT100GF60JU2 APT100GF60JU2.pdf
APT100GF60JU2
Hersteller: Microchip Technology
Description: IGBT MOD 600V 120A 416W SOT-227
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 416 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 120 A
IGBT Type: NPT
Supplier Device Package: SOT-227
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Bulk
Produkt ist nicht verfügbar
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2N3749
2N3749
Hersteller: Microchip Technology
Description: TRANS NPN 80V 5A TO111
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
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Jantxv2N3749 132818-lds-0328-datasheet
Hersteller: Microchip Technology
Description: TRANS NPN 80V 5A TO111
Qualification: MIL-PRF-19500/315
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 5 A
Grade: Military
Supplier Device Package: TO-111
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
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2N2892
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Produkt ist nicht verfügbar
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2N2877
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 30 W
Produkt ist nicht verfügbar
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2N3746
Hersteller: Microchip Technology
Description: POWER BJT
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
Transistor Type: PNP
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
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2N3744
Hersteller: Microchip Technology
Description: POWER BJT
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
Transistor Type: PNP
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
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2N3751
Hersteller: Microchip Technology
Description: POWER BJT
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
Transistor Type: PNP
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
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2N5326
Hersteller: Microchip Technology
Description: POWER BJT
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 1mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
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2N5328
Hersteller: Microchip Technology
Description: POWER BJT
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: TO-111
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
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2N5411
Hersteller: Microchip Technology
Description: POWER BJT
Power - Max: 52 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
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2N5410
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 52 W
Produkt ist nicht verfügbar
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DSC1001AI1-049.1520 DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001AI1-049.1520
Hersteller: Microchip Technology
Description: MEMS OSC XO 49.1520MHZ CMOS SMD
Base Resonator: MEMS
Frequency: 49.152 MHz
Height - Seated (Max): 0.035" (0.90mm)
Current - Supply (Max): 10.5mA
Ratings: AEC-Q100
Voltage - Supply: 1.7V ~ 3.6V
Frequency Stability: ±50ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Standby (Power Down)
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Package / Case: 4-VDFN Exposed Pad
Packaging: Strip
auf Bestellung 643 Stücke:
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6+3.15 EUR
10+3.09 EUR
50+3.04 EUR
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24CS512T-I/Q4B 24CS512_2021.pdf
24CS512T-I/Q4B
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8UDFN
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-UDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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24CS512T-I/Q4B 24CS512_2021.pdf
24CS512T-I/Q4B
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
auf Bestellung 4346 Stücke:
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AnzahlPreis
9+2.15 EUR
25+2.05 EUR
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24CS512T-I/OT WriteProtectionDS20005769.pdf
24CS512T-I/OT
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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24CS512T-I/OT WriteProtectionDS20005769.pdf
24CS512T-I/OT
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C SOT23-5
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: SOT-23-5
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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24CS512T-I/MS 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf
24CS512T-I/MS
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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AnzahlPreis
2500+2.07 EUR
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24CS512T-I/MS 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf
24CS512T-I/MS
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 4933 Stücke:
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AnzahlPreis
8+2.24 EUR
25+2.17 EUR
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24CS512T-E/Q4B 24CS512_2021.pdf
24CS512T-E/Q4B
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8UDFN
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-UDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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24CS512T-E/Q4B 24CS512_2021.pdf
24CS512T-E/Q4B
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8UDFN
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-UDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
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24CS512T-E/SN 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf
24CS512T-E/SN
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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24CS512T-E/SN 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf
24CS512T-E/SN
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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8+2.24 EUR
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24CS512-E/SN 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf
24CS512-E/SN
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
auf Bestellung 329 Stücke:
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8+2.24 EUR
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24CS512T-E/OT 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf
24CS512T-E/OT
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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24CS512T-E/OT 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf
24CS512T-E/OT
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.24 EUR
25+2.17 EUR
100+2.07 EUR
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