Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (276906) > Seite 1904 nach 4616
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UES1002SM | Microchip Technology |
Description: DIODE GEN PURP A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Supplier Device Package: A, Axial Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A |
Produkt ist nicht verfügbar |
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UES1003SM-1 | Microchip Technology |
Description: DIODE GEN PURP 1A A SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -55°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 150 V |
Produkt ist nicht verfügbar |
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UES1002SM-1 | Microchip Technology |
Description: DIODE GEN PURP 100V 2A A SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
Produkt ist nicht verfügbar |
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UES1001SM | Microchip Technology |
Description: DIODE GEN PURP 1A A SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -55°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 50 V |
Produkt ist nicht verfügbar |
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| UES1003SM/TR | Microchip Technology |
Description: RECTIFIER UFR,FRR Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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UES1002SM/TR | Microchip Technology |
Description: DIODE GEN PURP A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Supplier Device Package: A, Axial Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A |
Produkt ist nicht verfügbar |
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UES1002SM-1/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 2A A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
Produkt ist nicht verfügbar |
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UES1001SM/TR | Microchip Technology |
Description: DIODE GEN PURP 1A A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -55°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 50 V |
Produkt ist nicht verfügbar |
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UES1003SM-1/TR | Microchip Technology |
Description: DIODE GEN PURP 1A A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -55°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 150 V |
Produkt ist nicht verfügbar |
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UES1003 | Microchip Technology |
Description: DIODE GEN PURP 150V 1A A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A |
Produkt ist nicht verfügbar |
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UES1003/TR | Microchip Technology |
Description: DIODE GEN PURP 150V 1A A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A |
Produkt ist nicht verfügbar |
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| MPLAD7.5KP13A/TR | Microchip Technology |
Description: 13V, 5%, 8000W, UNI, MINI-PLAD, Packaging: Tape & Reel (TR) Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 349A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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M5KP13A | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC DO204ARPackaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 232A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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| M5KP13A/TR | Microchip Technology |
Description: TVS 13V 5% 5000W UNI Packaging: Tape & Reel (TR) Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 233A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: P600 Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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AT90USB82-16MUR | Microchip Technology |
Description: IC MCU 8BIT 8KB FLASH 32VQFNPackaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 512 x 8 Core Processor: AVR Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 32-VQFN (5x5) Number of I/O: 22 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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AT90USB82-16MUR | Microchip Technology |
Description: IC MCU 8BIT 8KB FLASH 32VQFNPackaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 512 x 8 Core Processor: AVR Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 32-VQFN (5x5) Number of I/O: 22 DigiKey Programmable: Not Verified |
auf Bestellung 2763 Stücke: Lieferzeit 10-14 Tag (e) |
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AT90USB82-16MU | Microchip Technology |
Description: IC MCU 8BIT 8KB FLASH 32VQFNPackaging: Tray Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 512 x 8 Core Processor: AVR Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 32-VQFN (5x5) Number of I/O: 22 DigiKey Programmable: Not Verified |
auf Bestellung 481 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2988 | Microchip Technology |
Description: TRANS PNP 100V 1A TO-5AA Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 20µA, 200µA Supplier Device Package: TO-5AA Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 5 W |
Produkt ist nicht verfügbar |
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2N2992 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Supplier Device Package: TO-5AA Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 5 W |
Produkt ist nicht verfügbar |
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2N2990 | Microchip Technology |
Description: TRANS NPN 100V 1A TO-5AA Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Supplier Device Package: TO-5AA Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 5 W |
Produkt ist nicht verfügbar |
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2N2994 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 50µA, 200µA Supplier Device Package: TO-5AA Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 5 W |
Produkt ist nicht verfügbar |
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| 2N2324 | Microchip Technology |
Description: SCR 100V 200UA TO5Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - On State (It (AV)) (Max): 220 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Supplier Device Package: TO-5 Grade: Military Voltage - Off State: 100 V Qualification: MIL-PRF-19500/276 |
Produkt ist nicht verfügbar |
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| 2N2324A | Microchip Technology |
Description: SCR 100V 20UA TO5Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 20 µA Current - On State (It (AV)) (Max): 220 mA Voltage - Gate Trigger (Vgt) (Max): 600 mV Supplier Device Package: TO-5 Grade: Military Voltage - Off State: 100 V Qualification: MIL-PRF-19500/276 |
Produkt ist nicht verfügbar |
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APT100GF60JU2 | Microchip Technology |
Description: IGBT MOD 600V 120A 416W SOT-227Packaging: Bulk Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SOT-227 IGBT Type: NPT Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 416 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V |
Produkt ist nicht verfügbar |
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2N3749 | Microchip Technology |
Description: TRANS NPN 80V 5A TO111 Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 20µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
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| Jantxv2N3749 | Microchip Technology |
Description: TRANS NPN 80V 5A TO111Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 20µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V Supplier Device Package: TO-111 Grade: Military Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W Qualification: MIL-PRF-19500/315 |
Produkt ist nicht verfügbar |
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| 2N2892 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 200µA, 1mA Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 30 W |
Produkt ist nicht verfügbar |
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| 2N2877 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 30 W |
Produkt ist nicht verfügbar |
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| 2N3746 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 30 W |
Produkt ist nicht verfügbar |
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| 2N3744 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 30 W |
Produkt ist nicht verfügbar |
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| 2N3751 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 30 W |
Produkt ist nicht verfügbar |
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| 2N5326 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 1mA Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 30 W |
Produkt ist nicht verfügbar |
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| 2N5328 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 30 W |
Produkt ist nicht verfügbar |
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| 2N5411 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 52 W |
Produkt ist nicht verfügbar |
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| 2N5410 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 52 W |
Produkt ist nicht verfügbar |
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DSC1001AI1-049.1520 | Microchip Technology |
Description: MEMS OSC XO 49.1520MHZ CMOS SMDPackaging: Strip Package / Case: 4-VDFN Exposed Pad Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.7V ~ 3.6V Ratings: AEC-Q100 Current - Supply (Max): 10.5mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 49.152 MHz Base Resonator: MEMS |
auf Bestellung 643 Stücke: Lieferzeit 10-14 Tag (e) |
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24CS512T-I/Q4B | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8UDFNPackaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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24CS512T-I/Q4B | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8UDFNPackaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 4346 Stücke: Lieferzeit 10-14 Tag (e) |
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24CS512T-I/OT | Microchip Technology |
Description: IC EEPROM 512KBIT I2C SOT23-5Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: SOT-23-5 Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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24CS512T-I/OT | Microchip Technology |
Description: IC EEPROM 512KBIT I2C SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: SOT-23-5 Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 2204 Stücke: Lieferzeit 10-14 Tag (e) |
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24CS512T-I/MS | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8MSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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24CS512T-I/MS | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 4933 Stücke: Lieferzeit 10-14 Tag (e) |
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24CS512T-E/Q4B | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8UDFNPackaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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24CS512T-E/Q4B | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8UDFNPackaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 4970 Stücke: Lieferzeit 10-14 Tag (e) |
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24CS512T-E/SN | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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24CS512T-E/SN | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 3043 Stücke: Lieferzeit 10-14 Tag (e) |
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24CS512-E/SN | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 329 Stücke: Lieferzeit 10-14 Tag (e) |
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24CS512T-E/OT | Microchip Technology |
Description: IC EEPROM 512KBIT I2C SOT23-5Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: SOT-23-5 Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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24CS512T-E/OT | Microchip Technology |
Description: IC EEPROM 512KBIT I2C SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: SOT-23-5 Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 2890 Stücke: Lieferzeit 10-14 Tag (e) |
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24CS512T-I/SM | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8SOIJPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIJ Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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24CS512T-I/SM | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8SOIJPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIJ Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1902 Stücke: Lieferzeit 10-14 Tag (e) |
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24CS512T-E/SM | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8SOIJPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIJ Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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24CS512T-E/SM | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8SOIJPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIJ Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1898 Stücke: Lieferzeit 10-14 Tag (e) |
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24CS512-E/P | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: 8-PDIP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 288 Stücke: Lieferzeit 10-14 Tag (e) |
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SM16LC05CE3/TR13 | Microchip Technology |
Description: TVS DIODE 5VWM 11VC 16SOPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 25pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: 16-SO Bidirectional Channels: 8 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 11V Power - Peak Pulse: 300W Power Line Protection: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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MIC4930YFL-TR | Microchip Technology |
Description: IC REG BUCK ADJ 3A 10DFNPackaging: Tape & Reel (TR) Package / Case: 10-PowerVDFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: Up to 3.3MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: 10-DFN (3x4) Synchronous Rectifier: Yes Voltage - Output (Max): 5.5V Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 0.625V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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MIC4930YFL-TR | Microchip Technology |
Description: IC REG BUCK ADJ 3A 10DFNPackaging: Cut Tape (CT) Package / Case: 10-PowerVDFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: Up to 3.3MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: 10-DFN (3x4) Synchronous Rectifier: Yes Voltage - Output (Max): 5.5V Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 0.625V |
auf Bestellung 4965 Stücke: Lieferzeit 10-14 Tag (e) |
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MIC49200-1.0WR | Microchip Technology |
Description: 2AMP LOW VOLTAGE LDO WITH DUAL IPackaging: Bulk Package / Case: SPak-5 (5 leads + Tab) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 2A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Voltage - Input (Max): 6.5V Number of Regulators: 1 Supplier Device Package: S-PAK-5 Voltage - Output (Min/Fixed): 1V Control Features: Enable Voltage Dropout (Max): 0.625V @ 2A Protection Features: Over Current, Over Temperature |
auf Bestellung 4131 Stücke: Lieferzeit 10-14 Tag (e) |
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MSC360SMA120SCT/R | Microchip Technology |
Description: MOSFET SIC 1200 V 360 MOHM PSMTPackaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.14V @ 250µA Supplier Device Package: 16-PSMT Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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MSC360SMA120SCT/R | Microchip Technology |
Description: MOSFET SIC 1200 V 360 MOHM PSMTPackaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.14V @ 250µA Supplier Device Package: 16-PSMT Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V |
auf Bestellung 1296 Stücke: Lieferzeit 10-14 Tag (e) |
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| UES1002SM |
Hersteller: Microchip Technology
Description: DIODE GEN PURP A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Supplier Device Package: A, Axial
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Description: DIODE GEN PURP A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Supplier Device Package: A, Axial
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UES1003SM-1 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UES1002SM-1 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 2A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE GEN PURP 100V 2A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UES1001SM |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UES1002SM/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Supplier Device Package: A, Axial
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Description: DIODE GEN PURP A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Supplier Device Package: A, Axial
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UES1002SM-1/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE GEN PURP 100V 2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UES1001SM/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UES1003SM-1/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UES1003 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UES1003/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPLAD7.5KP13A/TR |
Hersteller: Microchip Technology
Description: 13V, 5%, 8000W, UNI, MINI-PLAD,
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 349A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: 13V, 5%, 8000W, UNI, MINI-PLAD,
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 349A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| M5KP13A |
![]() |
Hersteller: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 232A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 13VWM 21.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 232A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| M5KP13A/TR |
Hersteller: Microchip Technology
Description: TVS 13V 5% 5000W UNI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 233A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS 13V 5% 5000W UNI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 233A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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| AT90USB82-16MUR |
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Hersteller: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
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| AT90USB82-16MUR |
![]() |
Hersteller: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
auf Bestellung 2763 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.26 EUR |
| 25+ | 4.83 EUR |
| 100+ | 4.39 EUR |
| AT90USB82-16MU | ![]() |
![]() |
Hersteller: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
auf Bestellung 481 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.05 EUR |
| 25+ | 4.64 EUR |
| 100+ | 4.17 EUR |
| 2N2988 |
Hersteller: Microchip Technology
Description: TRANS PNP 100V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 20µA, 200µA
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
Description: TRANS PNP 100V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 20µA, 200µA
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
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| 2N2992 |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
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| 2N2990 |
Hersteller: Microchip Technology
Description: TRANS NPN 100V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
Description: TRANS NPN 100V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
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| 2N2994 |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 50µA, 200µA
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 50µA, 200µA
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
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| 2N2324 |
![]() |
Hersteller: Microchip Technology
Description: SCR 100V 200UA TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-5
Grade: Military
Voltage - Off State: 100 V
Qualification: MIL-PRF-19500/276
Description: SCR 100V 200UA TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-5
Grade: Military
Voltage - Off State: 100 V
Qualification: MIL-PRF-19500/276
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| 2N2324A |
![]() |
Hersteller: Microchip Technology
Description: SCR 100V 20UA TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Supplier Device Package: TO-5
Grade: Military
Voltage - Off State: 100 V
Qualification: MIL-PRF-19500/276
Description: SCR 100V 20UA TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Supplier Device Package: TO-5
Grade: Military
Voltage - Off State: 100 V
Qualification: MIL-PRF-19500/276
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| APT100GF60JU2 |
![]() |
Hersteller: Microchip Technology
Description: IGBT MOD 600V 120A 416W SOT-227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
Description: IGBT MOD 600V 120A 416W SOT-227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
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| 2N3749 |
Hersteller: Microchip Technology
Description: TRANS NPN 80V 5A TO111
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: TRANS NPN 80V 5A TO111
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
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| Jantxv2N3749 |
![]() |
Hersteller: Microchip Technology
Description: TRANS NPN 80V 5A TO111
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Supplier Device Package: TO-111
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Qualification: MIL-PRF-19500/315
Description: TRANS NPN 80V 5A TO111
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Supplier Device Package: TO-111
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Qualification: MIL-PRF-19500/315
Produkt ist nicht verfügbar
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| 2N2892 |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Produkt ist nicht verfügbar
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| 2N2877 |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 30 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 30 W
Produkt ist nicht verfügbar
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| 2N3746 |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 2N3744 |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 30 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 30 W
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 2N3751 |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 30 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 30 W
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 2N5326 |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Produkt ist nicht verfügbar
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| 2N5328 |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 2N5411 |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 52 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 52 W
Produkt ist nicht verfügbar
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| 2N5410 |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 52 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 52 W
Produkt ist nicht verfügbar
Im Einkaufswagen
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| DSC1001AI1-049.1520 |
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Hersteller: Microchip Technology
Description: MEMS OSC XO 49.1520MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 49.152 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 49.1520MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 49.152 MHz
Base Resonator: MEMS
auf Bestellung 643 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.15 EUR |
| 10+ | 3.09 EUR |
| 50+ | 3.04 EUR |
| 24CS512T-I/Q4B |
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Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 24CS512T-I/Q4B |
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Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
auf Bestellung 4346 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.15 EUR |
| 25+ | 2.05 EUR |
| 100+ | 1.96 EUR |
| 24CS512T-I/OT |
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Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 24CS512T-I/OT |
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Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2204 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.06 EUR |
| 24CS512T-I/MS |
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Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 2.07 EUR |
| 24CS512T-I/MS |
![]() |
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
auf Bestellung 4933 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.24 EUR |
| 25+ | 2.17 EUR |
| 100+ | 2.07 EUR |
| 24CS512T-E/Q4B |
![]() |
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 24CS512T-E/Q4B |
![]() |
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
auf Bestellung 4970 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.32 EUR |
| 24CS512T-E/SN |
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Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 24CS512T-E/SN |
![]() |
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3043 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.24 EUR |
| 25+ | 2.17 EUR |
| 100+ | 2.07 EUR |
| 24CS512-E/SN |
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Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
auf Bestellung 329 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.24 EUR |
| 25+ | 2.17 EUR |
| 100+ | 2.07 EUR |
| 24CS512T-E/OT |
![]() |
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 24CS512T-E/OT |
![]() |
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.24 EUR |
| 25+ | 2.17 EUR |
| 100+ | 2.07 EUR |
| 24CS512T-I/SM |
![]() |
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8SOIJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIJ
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 8SOIJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIJ
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 24CS512T-I/SM |
![]() |
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8SOIJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIJ
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 8SOIJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIJ
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1902 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.27 EUR |
| 25+ | 2.2 EUR |
| 100+ | 2.13 EUR |
| 24CS512T-E/SM |
![]() |
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8SOIJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIJ
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 8SOIJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIJ
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 24CS512T-E/SM |
![]() |
Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8SOIJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIJ
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 8SOIJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIJ
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1898 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.43 EUR |
| 25+ | 2.34 EUR |
| 100+ | 2.24 EUR |
| 24CS512-E/P |
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Hersteller: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
auf Bestellung 288 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.52 EUR |
| 25+ | 2.43 EUR |
| 100+ | 2.33 EUR |
| SM16LC05CE3/TR13 |
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Hersteller: Microchip Technology
Description: TVS DIODE 5VWM 11VC 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 16-SO
Bidirectional Channels: 8
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 5VWM 11VC 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 16-SO
Bidirectional Channels: 8
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 300W
Power Line Protection: No
Produkt ist nicht verfügbar
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| MIC4930YFL-TR |
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Hersteller: Microchip Technology
Description: IC REG BUCK ADJ 3A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerVDFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 3.3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-DFN (3x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.625V
Description: IC REG BUCK ADJ 3A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerVDFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 3.3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-DFN (3x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.625V
Produkt ist nicht verfügbar
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| MIC4930YFL-TR |
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Hersteller: Microchip Technology
Description: IC REG BUCK ADJ 3A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerVDFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 3.3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-DFN (3x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.625V
Description: IC REG BUCK ADJ 3A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerVDFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 3.3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-DFN (3x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.625V
auf Bestellung 4965 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.32 EUR |
| 25+ | 1.91 EUR |
| 100+ | 1.75 EUR |
| MIC49200-1.0WR |
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Hersteller: Microchip Technology
Description: 2AMP LOW VOLTAGE LDO WITH DUAL I
Packaging: Bulk
Package / Case: SPak-5 (5 leads + Tab)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 6.5V
Number of Regulators: 1
Supplier Device Package: S-PAK-5
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Voltage Dropout (Max): 0.625V @ 2A
Protection Features: Over Current, Over Temperature
Description: 2AMP LOW VOLTAGE LDO WITH DUAL I
Packaging: Bulk
Package / Case: SPak-5 (5 leads + Tab)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 6.5V
Number of Regulators: 1
Supplier Device Package: S-PAK-5
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Voltage Dropout (Max): 0.625V @ 2A
Protection Features: Over Current, Over Temperature
auf Bestellung 4131 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 83+ | 5.94 EUR |
| MSC360SMA120SCT/R |
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Hersteller: Microchip Technology
Description: MOSFET SIC 1200 V 360 MOHM PSMT
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.14V @ 250µA
Supplier Device Package: 16-PSMT
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V
Description: MOSFET SIC 1200 V 360 MOHM PSMT
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.14V @ 250µA
Supplier Device Package: 16-PSMT
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V
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| MSC360SMA120SCT/R |
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Hersteller: Microchip Technology
Description: MOSFET SIC 1200 V 360 MOHM PSMT
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.14V @ 250µA
Supplier Device Package: 16-PSMT
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V
Description: MOSFET SIC 1200 V 360 MOHM PSMT
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.14V @ 250µA
Supplier Device Package: 16-PSMT
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V
auf Bestellung 1296 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 7.43 EUR |
| 25+ | 6.85 EUR |
| 100+ | 6.81 EUR |















