Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (276143) > Seite 793 nach 4603
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||
|---|---|---|---|---|---|---|---|
 |
APTGLQ200H120G | Microchip Technology |
 Description: IGBT MODULE 1200V 350A 1000W SP6Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V Current - Collector Cutoff (Max): 100 µA Power - Max: 1000 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 350 A IGBT Type: Trench Field Stop Supplier Device Package: SP6 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 200A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Full Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
 |
APTGLQ200HR120G | Microchip Technology |
Description: IGBT MODULE 1200V 300A 1000W SP6 Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V Current - Collector Cutoff (Max): 200 µA Power - Max: 1000 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 300 A IGBT Type: Trench Field Stop Supplier Device Package: SP6 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 160A Operating Temperature: -40°C ~ 175°C (TJ) Input: Standard Mounting Type: Through Hole Package / Case: SP6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
| APTGLQ300H65G | Microchip Technology |
Description: IGBT MODULE 650V 600A 1000W SP6 Input Capacitance (Cies) @ Vce: 18.3 nF @ 25 V Current - Collector Cutoff (Max): 300 µA Power - Max: 1000 W Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 600 A IGBT Type: Trench Field Stop Supplier Device Package: SP6 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Full Bridge Input: Standard Mounting Type: Through Hole Package / Case: SP6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | |||
| APTGLQ40DDA120CT3G | Microchip Technology |
Description: IGBT MODULE 1200V 75A 250W SP6 Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V Current - Collector Cutoff (Max): 100 µA Power - Max: 250 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A IGBT Type: Trench Field Stop Supplier Device Package: SP6 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Dual Boost Chopper Input: Standard Mounting Type: Through Hole Package / Case: SP6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 11 Stücke Im Einkaufswagen Stück im Wert von UAH | |||
| APTGLQ600A65T6G | Microchip Technology |
Description: IGBT MODULE 650V 1200A 2000W SP6 Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: SP6 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 600A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Half Bridge Input: Standard Mounting Type: Through Hole Package / Case: SP6 Packaging: Bulk Input Capacitance (Cies) @ Vce: 36.6 nF @ 25 V Current - Collector Cutoff (Max): 600 µA Power - Max: 2000 W Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 1200 A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | |||
| APTGLQ75H120T3G | Microchip Technology |
Description: IGBT MODULE 1200V 130A 385W SP1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9 Stücke Im Einkaufswagen Stück im Wert von UAH | |||
 |
APTGLQ75H65T1G | Microchip Technology |
Description: IGBT MODULE 650V 150A 250W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Through Hole Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 250 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
| APTGLQ80HR120CT3G | Microchip Technology |
Description: IGBT MODULE 1200V 150A 500W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Through Hole Input: Standard Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 80A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 500 W Current - Collector Cutoff (Max): 150 µA Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9 Stücke Im Einkaufswagen Stück im Wert von UAH | |||
| APTGT100TL170G | Microchip Technology |
Description: IGBT MODULE 1700V 150A 560W SP6 Input Capacitance (Cies) @ Vce: 9 nF @ 25 V Current - Collector Cutoff (Max): 350 µA Power - Max: 560 W Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 150 A IGBT Type: Trench Field Stop Supplier Device Package: SP6 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Level Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | |||
| APTM100TA35SCTPG | Microchip Technology |
Description: MOSFET 6N-CH 1000V 22A SP6-P Supplier Device Package: SP6-P Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Current - Continuous Drain (Id) @ 25°C: 22A Drain to Source Voltage (Vdss): 1000V (1kV) Power - Max: 390W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 6 N-Channel (3-Phase Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |||
| APTGT50DH60T1G | Microchip Technology |
Description: IGBT MODULE 600V 80A 176W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Asymmetrical Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 19 Stücke Im Einkaufswagen Stück im Wert von UAH | |||
| APTGT50TL60T3G | Microchip Technology |
Description: IGBT MODULE 600V 80A 176W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15 Stücke Im Einkaufswagen Stück im Wert von UAH | |||
| APTGT75DH120T3G | Microchip Technology |
Description: IGBT MODULE 1200V 110A 357W SP3 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 13 Stücke Im Einkaufswagen Stück im Wert von UAH | |||
| APTLGT300A1208G | Microchip Technology |
Description: IGBT IPM 1.2KV 440A 6-PWRSIP MOD Packaging: Bulk Package / Case: 6-PowerSIP Module Mounting Type: Through Hole Type: IGBT Configuration: Half Bridge Voltage - Isolation: 2500Vrms Current: 440 A Voltage: 1.2 kV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |||
 |
APT26M100JCU3 | Microchip Technology |
Description: MOSFET N-CH 1000V 26A SOT227 Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-227 Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 26 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
| APTC60SKM24CT1G | Microchip Technology |
Description: MOSFET N-CH 600V 95A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V Power Dissipation (Max): 462W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 5mA Supplier Device Package: SP1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 11 Stücke Im Einkaufswagen Stück im Wert von UAH | |||
| APTM100UM65SCAVG | Microchip Technology |
Description: MOSFET N-CH 1000V 145A SP6 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V Power Dissipation (Max): 3250W (Tc) Vgs(th) (Max) @ Id: 5V @ 20mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |||
 |
APT60N60SCSG | Microchip Technology |
Description: MOSFET N-CH 600V 60A D3PAK Packaging: Bulk Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V Power Dissipation (Max): 431W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: D3Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
 |
APT12057B2LLG | Microchip Technology |
Description: MOSFET N-CH 1200V 22A T-MAX Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: T-MAX™ [B2] Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 690W (Tc) Rds On (Max) @ Id, Vgs: 570mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
 |
APT14M100S | Microchip Technology |
Description: MOSFET N-CH 1000V 14A D3PAK Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D3Pak Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 880mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 70 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
 |
APT77N60SC6 | Microchip Technology |
Description: MOSFET N-CH 600V 77A D3PAK |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
APT7M120S | Microchip Technology |
Description: MOSFET N-CH 1200V 8A D3PAK Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D3Pak Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 335W (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Bulk Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 80 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
| ARF1505 | Microchip Technology |
Description: RF PWR MOSFET 300V 25A DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | |||
| ARF1511 | Microchip Technology |
Description: RF PWR MOSFET 500V 20A DIE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | |||
.jpg "ARF449AG") |
ARF449AG | Microchip Technology |
Description: RF PWR MOSFET 450V TO-247 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
ARF449BG | Microchip Technology |
Description: RF PWR MOSFET 450V TO-247 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
 |
ARF465AG | Microchip Technology |
Description: RF MOSFET 300V TO247 Voltage - Test: 300 V Voltage - Rated: 1200 V Part Status: Active Supplier Device Package: TO-247 Technology: MOSFET (Metal Oxide) Gain: 15dB Power - Output: 150W Configuration: N-Channel Frequency: 40.68MHz Current Rating (Amps): 6A Package / Case: TO-247-3 Packaging: Bulk |
auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
|
||
| APTGLQ40HR120CT3G | Microchip Technology |
Description: IGBT MODULE 1200V 75A 250W SP3 Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V Current - Collector Cutoff (Max): 100 µA Power - Max: 250 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A IGBT Type: Trench Field Stop Supplier Device Package: SP3 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Operating Temperature: -40°C ~ 175°C (TJ) Input: Standard Mounting Type: Through Hole Package / Case: SP3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14 Stücke Im Einkaufswagen Stück im Wert von UAH | |||
 |
ARF475FL | Microchip Technology |
Description: RF MOSFET 150V Current - Test: 15 mA Voltage - Test: 150 V Voltage - Rated: 500 V Part Status: Active Technology: MOSFET Gain: 16dB Power - Output: 900W Configuration: 2 N-Channel (Dual) Common Source Frequency: 128MHz Current Rating (Amps): 10A Packaging: Bulk |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
|
||
 |
APT94N65B2C6 | Microchip Technology |
Description: MOSFET N-CH 650V 95A T-MAX Input Capacitance (Ciss) (Max) @ Vds: 8140 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: T-MAX™ [B2] Vgs(th) (Max) @ Id: 3.5V @ 3.5mA Power Dissipation (Max): 833W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 35.2A, 10V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
| APTGLQ40H120T1G | Microchip Technology |
Description: IGBT MODULE 1200V 75A 250W SP1 Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V Current - Collector Cutoff (Max): 100 µA Power - Max: 250 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: SP1 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Full Bridge Input: Standard Mounting Type: Through Hole Package / Case: SP1 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14 Stücke Im Einkaufswagen Stück im Wert von UAH | |||
| APTC90SKM60CT1G | Microchip Technology |
Description: MOSFET N-CH 900V 59A SP1 Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: SP1 Vgs(th) (Max) @ Id: 3.5V @ 6mA Power Dissipation (Max): 462W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
 |
APTM120DA30CT1G | Microchip Technology |
Description: MOSFET N-CH 1200V 31A SP1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
| ARF1519 | Microchip Technology |
Description: RF PWR MOSFET 1000V 20A DIE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
 |
APTGLQ100A65T1G | Microchip Technology |
Description: IGBT MODULE 650V 200A 350W SP1 Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Half Bridge Input: Standard Mounting Type: Through Hole Package / Case: SP1 Packaging: Bulk Input Capacitance (Cies) @ Vce: 6 nF @ 25 V Current - Collector Cutoff (Max): 100 µA Power - Max: 350 W Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 200 A IGBT Type: Trench Field Stop Supplier Device Package: SP1 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
 |
1PMT4100Ce3/TR13 | Microchip Technology |
Description: DIODE ZENER 7.5V 1W DO216 Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 1 W Part Status: Active Supplier Device Package: DO-216 Impedance (Max) (Zzt): 200 Ohms Mounting Type: Surface Mount Package / Case: DO-216AA Tolerance: ±2% Packaging: Tape & Reel (TR) Voltage - Zener (Nom) (Vz): 7.5 V Operating Temperature: -55°C ~ 150°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4100Ce3/TR7 | Microchip Technology |
Description: DIODE ZENER 7.5V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4100e3/TR13 | Microchip Technology |
Description: DIODE ZENER 7.5V 1W DO216 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
 |
1PMT4104/TR13 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO216 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4104/TR7 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO216 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4104C/TR13 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4104C/TR7 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4104Ce3/TR13 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4104Ce3/TR7 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO216 Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 1 W Supplier Device Package: DO-216 Impedance (Max) (Zzt): 200 Ohms Voltage - Zener (Nom) (Vz): 10 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-216AA Tolerance: ±2% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4104e3/TR13 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO216 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4104e3/TR7 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO216 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4106/TR13 | Microchip Technology |
Description: DIODE ZENER 12V 1W DO216 Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 1 W Supplier Device Package: DO-216 Impedance (Max) (Zzt): 200 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-216AA Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4106/TR7 | Microchip Technology |
Description: DIODE ZENER 12V 1W DO216 Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 1 W Supplier Device Package: DO-216 Impedance (Max) (Zzt): 200 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-216AA Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4106C/TR13 | Microchip Technology |
Description: DIODE ZENER 12V 1W DO216 Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 1 W Supplier Device Package: DO-216 Impedance (Max) (Zzt): 200 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-216AA Tolerance: ±2% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4106C/TR7 | Microchip Technology |
Description: DIODE ZENER 12V 1W DO216 Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 1 W Supplier Device Package: DO-216 Impedance (Max) (Zzt): 200 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-216AA Tolerance: ±2% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4106Ce3/TR13 | Microchip Technology |
Description: DIODE ZENER 12V 1W DO216 Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 1 W Supplier Device Package: DO-216 Impedance (Max) (Zzt): 200 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-216AA Tolerance: ±2% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4106Ce3/TR7 | Microchip Technology |
Description: DIODE ZENER 12V 1W DO216 Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 1 W Supplier Device Package: DO-216 Impedance (Max) (Zzt): 200 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-216AA Tolerance: ±2% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4106e3/TR13 | Microchip Technology |
Description: DIODE ZENER 12V 1W DO216 Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 1 W Supplier Device Package: DO-216 Impedance (Max) (Zzt): 200 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-216AA Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4106e3/TR7 | Microchip Technology |
Description: DIODE ZENER 12V 1W DO216 Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 1 W Supplier Device Package: DO-216 Impedance (Max) (Zzt): 200 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-216AA Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4107/TR13 | Microchip Technology |
Description: DIODE ZENER 13V 1W DO216 Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 1 W Supplier Device Package: DO-216 Impedance (Max) (Zzt): 200 Ohms Voltage - Zener (Nom) (Vz): 13 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-216AA Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4107/TR7 | Microchip Technology |
Description: DIODE ZENER 13V 1W DO216 Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 1 W Supplier Device Package: DO-216 Impedance (Max) (Zzt): 200 Ohms Voltage - Zener (Nom) (Vz): 13 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-216AA Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4107C/TR13 | Microchip Technology |
Description: DIODE ZENER 13V 1W DO216 Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 1 W Supplier Device Package: DO-216 Impedance (Max) (Zzt): 200 Ohms Voltage - Zener (Nom) (Vz): 13 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-216AA Tolerance: ±2% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4107C/TR7 | Microchip Technology |
Description: DIODE ZENER 13V 1W DO216 Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 1 W Supplier Device Package: DO-216 Impedance (Max) (Zzt): 200 Ohms Voltage - Zener (Nom) (Vz): 13 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-216AA Tolerance: ±2% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4107Ce3/TR13 | Microchip Technology |
Description: DIODE ZENER 13V 1W DO216 Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 1 W Supplier Device Package: DO-216 Impedance (Max) (Zzt): 200 Ohms Voltage - Zener (Nom) (Vz): 13 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-216AA Tolerance: ±2% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
|
|
1PMT4107Ce3/TR7 | Microchip Technology |
Description: DIODE ZENER 13V 1W DO216 Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 1 W Supplier Device Package: DO-216 Impedance (Max) (Zzt): 200 Ohms Voltage - Zener (Nom) (Vz): 13 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-216AA Tolerance: ±2% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APTGLQ200H120G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 350A 1000W SP6
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 1000 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 350 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 200A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: IGBT MODULE 1200V 350A 1000W SP6
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 1000 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 350 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 200A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTGLQ200HR120G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 300A 1000W SP6
Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V
Current - Collector Cutoff (Max): 200 µA
Power - Max: 1000 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 300 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 160A
Operating Temperature: -40°C ~ 175°C (TJ)
Input: Standard
Mounting Type: Through Hole
Package / Case: SP6
Packaging: Bulk
Description: IGBT MODULE 1200V 300A 1000W SP6
Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V
Current - Collector Cutoff (Max): 200 µA
Power - Max: 1000 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 300 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 160A
Operating Temperature: -40°C ~ 175°C (TJ)
Input: Standard
Mounting Type: Through Hole
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTGLQ300H65G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 650V 600A 1000W SP6
Input Capacitance (Cies) @ Vce: 18.3 nF @ 25 V
Current - Collector Cutoff (Max): 300 µA
Power - Max: 1000 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 600 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Full Bridge
Input: Standard
Mounting Type: Through Hole
Package / Case: SP6
Packaging: Bulk
Description: IGBT MODULE 650V 600A 1000W SP6
Input Capacitance (Cies) @ Vce: 18.3 nF @ 25 V
Current - Collector Cutoff (Max): 300 µA
Power - Max: 1000 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 600 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Full Bridge
Input: Standard
Mounting Type: Through Hole
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTGLQ40DDA120CT3G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 75A 250W SP6
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Dual Boost Chopper
Input: Standard
Mounting Type: Through Hole
Package / Case: SP6
Packaging: Bulk
Description: IGBT MODULE 1200V 75A 250W SP6
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Dual Boost Chopper
Input: Standard
Mounting Type: Through Hole
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTGLQ600A65T6G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 650V 1200A 2000W SP6
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: SP6
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 600A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Through Hole
Package / Case: SP6
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 36.6 nF @ 25 V
Current - Collector Cutoff (Max): 600 µA
Power - Max: 2000 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 1200 A
Description: IGBT MODULE 650V 1200A 2000W SP6
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: SP6
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 600A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Through Hole
Package / Case: SP6
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 36.6 nF @ 25 V
Current - Collector Cutoff (Max): 600 µA
Power - Max: 2000 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 1200 A
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTGLQ75H120T3G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 130A 385W SP1
Description: IGBT MODULE 1200V 130A 385W SP1
Produkt ist nicht verfügbar
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTGLQ75H65T1G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 650V 150A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Through Hole
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Description: IGBT MODULE 650V 150A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Through Hole
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTGLQ80HR120CT3G |
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 150A 500W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Through Hole
Input: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 80A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 150 µA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Description: IGBT MODULE 1200V 150A 500W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Through Hole
Input: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 80A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 150 µA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTGT100TL170G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 1700V 150A 560W SP6
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 560 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 150 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: IGBT MODULE 1700V 150A 560W SP6
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 560 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 150 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTM100TA35SCTPG |
|
Hersteller: Microchip Technology
Description: MOSFET 6N-CH 1000V 22A SP6-P
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: MOSFET 6N-CH 1000V 22A SP6-P
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTGT50DH60T1G |
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Description: IGBT MODULE 600V 80A 176W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTGT50TL60T3G |
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Description: IGBT MODULE 600V 80A 176W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTGT75DH120T3G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 110A 357W SP3
Description: IGBT MODULE 1200V 110A 357W SP3
Produkt ist nicht verfügbar
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTLGT300A1208G |
|
Hersteller: Microchip Technology
Description: IGBT IPM 1.2KV 440A 6-PWRSIP MOD
Packaging: Bulk
Package / Case: 6-PowerSIP Module
Mounting Type: Through Hole
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 2500Vrms
Current: 440 A
Voltage: 1.2 kV
Description: IGBT IPM 1.2KV 440A 6-PWRSIP MOD
Packaging: Bulk
Package / Case: 6-PowerSIP Module
Mounting Type: Through Hole
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 2500Vrms
Current: 440 A
Voltage: 1.2 kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT26M100JCU3 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 26A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 543W (Tc)
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Description: MOSFET N-CH 1000V 26A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 543W (Tc)
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 26 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTC60SKM24CT1G |
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 95A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
Description: MOSFET N-CH 600V 95A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTM100UM65SCAVG |
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 145A SP6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Power Dissipation (Max): 3250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 20mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
Description: MOSFET N-CH 1000V 145A SP6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Power Dissipation (Max): 3250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 20mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT60N60SCSG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 60A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 600V 60A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT12057B2LLG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 22A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 690W (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Description: MOSFET N-CH 1200V 22A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 690W (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT14M100S |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 14A D3PAK
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 880mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 1000V 14A D3PAK
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 880mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Mindestbestellmenge: 70 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT77N60SC6 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 77A D3PAK
Description: MOSFET N-CH 600V 77A D3PAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT7M120S |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 8A D3PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 335W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Bulk
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Description: MOSFET N-CH 1200V 8A D3PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 335W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Bulk
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 80 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ARF1505 |
|
Hersteller: Microchip Technology
Description: RF PWR MOSFET 300V 25A DIE
Description: RF PWR MOSFET 300V 25A DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ARF1511 |
|
Hersteller: Microchip Technology
Description: RF PWR MOSFET 500V 20A DIE
Description: RF PWR MOSFET 500V 20A DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ARF449AG |
|
Hersteller: Microchip Technology
Description: RF PWR MOSFET 450V TO-247
Description: RF PWR MOSFET 450V TO-247
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ARF449BG |
|
Hersteller: Microchip Technology
Description: RF PWR MOSFET 450V TO-247
Description: RF PWR MOSFET 450V TO-247
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ARF465AG |
|
Hersteller: Microchip Technology
Description: RF MOSFET 300V TO247
Voltage - Test: 300 V
Voltage - Rated: 1200 V
Part Status: Active
Supplier Device Package: TO-247
Technology: MOSFET (Metal Oxide)
Gain: 15dB
Power - Output: 150W
Configuration: N-Channel
Frequency: 40.68MHz
Current Rating (Amps): 6A
Package / Case: TO-247-3
Packaging: Bulk
Description: RF MOSFET 300V TO247
Voltage - Test: 300 V
Voltage - Rated: 1200 V
Part Status: Active
Supplier Device Package: TO-247
Technology: MOSFET (Metal Oxide)
Gain: 15dB
Power - Output: 150W
Configuration: N-Channel
Frequency: 40.68MHz
Current Rating (Amps): 6A
Package / Case: TO-247-3
Packaging: Bulk
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 103.61 EUR |
| APTGLQ40HR120CT3G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 75A 250W SP3
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Operating Temperature: -40°C ~ 175°C (TJ)
Input: Standard
Mounting Type: Through Hole
Package / Case: SP3
Packaging: Bulk
Description: IGBT MODULE 1200V 75A 250W SP3
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Operating Temperature: -40°C ~ 175°C (TJ)
Input: Standard
Mounting Type: Through Hole
Package / Case: SP3
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ARF475FL |
|
Hersteller: Microchip Technology
Description: RF MOSFET 150V
Current - Test: 15 mA
Voltage - Test: 150 V
Voltage - Rated: 500 V
Part Status: Active
Technology: MOSFET
Gain: 16dB
Power - Output: 900W
Configuration: 2 N-Channel (Dual) Common Source
Frequency: 128MHz
Current Rating (Amps): 10A
Packaging: Bulk
Description: RF MOSFET 150V
Current - Test: 15 mA
Voltage - Test: 150 V
Voltage - Rated: 500 V
Part Status: Active
Technology: MOSFET
Gain: 16dB
Power - Output: 900W
Configuration: 2 N-Channel (Dual) Common Source
Frequency: 128MHz
Current Rating (Amps): 10A
Packaging: Bulk
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 241.35 EUR |
| APT94N65B2C6 |
Hersteller: Microchip Technology
Description: MOSFET N-CH 650V 95A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 8140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 3.5V @ 3.5mA
Power Dissipation (Max): 833W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Bulk
Description: MOSFET N-CH 650V 95A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 8140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 3.5V @ 3.5mA
Power Dissipation (Max): 833W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTGLQ40H120T1G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 75A 250W SP1
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Full Bridge
Input: Standard
Mounting Type: Through Hole
Package / Case: SP1
Packaging: Bulk
Description: IGBT MODULE 1200V 75A 250W SP1
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Full Bridge
Input: Standard
Mounting Type: Through Hole
Package / Case: SP1
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTC90SKM60CT1G |
Hersteller: Microchip Technology
Description: MOSFET N-CH 900V 59A SP1
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SP1
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Power Dissipation (Max): 462W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Description: MOSFET N-CH 900V 59A SP1
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SP1
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Power Dissipation (Max): 462W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTM120DA30CT1G |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 31A SP1
Description: MOSFET N-CH 1200V 31A SP1
Produkt ist nicht verfügbar
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ARF1519 |
|
Hersteller: Microchip Technology
Description: RF PWR MOSFET 1000V 20A DIE
Description: RF PWR MOSFET 1000V 20A DIE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTGLQ100A65T1G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 650V 200A 350W SP1
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Through Hole
Package / Case: SP1
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 350 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 200 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
Description: IGBT MODULE 650V 200A 350W SP1
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Through Hole
Package / Case: SP1
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 350 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 200 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
Produkt ist nicht verfügbar
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4100Ce3/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 7.5V 1W DO216
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -55°C ~ 150°C
Description: DIODE ZENER 7.5V 1W DO216
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -55°C ~ 150°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4100Ce3/TR7 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 7.5V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
Description: DIODE ZENER 7.5V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4100e3/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 7.5V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
Description: DIODE ZENER 7.5V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4104/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Description: DIODE ZENER 10V 1W DO216
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4104/TR7 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Description: DIODE ZENER 10V 1W DO216
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4104C/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
Description: DIODE ZENER 10V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4104C/TR7 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
Description: DIODE ZENER 10V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4104Ce3/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
Description: DIODE ZENER 10V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4104Ce3/TR7 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 10V 1W DO216
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4104e3/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Description: DIODE ZENER 10V 1W DO216
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4104e3/TR7 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Description: DIODE ZENER 10V 1W DO216
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4106/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 12V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4106/TR7 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 12V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4106C/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 12V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4106C/TR7 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 12V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4106Ce3/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 12V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4106Ce3/TR7 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 12V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4106e3/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 12V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4106e3/TR7 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 12V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4107/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 13V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4107/TR7 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 13V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4107C/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 13V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4107C/TR7 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 13V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4107Ce3/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 13V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1PMT4107Ce3/TR7 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 13V 1W DO216
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-216
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH