Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (276131) > Seite 791 nach 4603
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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A54SX32A-1FG256M | Microchip Technology |
Description: IC FPGA 203 I/O 256FBGA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 90 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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A54SX32A-1FGG256M | Microchip Technology |
Description: IC FPGA 203 I/O 256FBGA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 90 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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A54SX32A-1TQG100M | Microchip Technology |
Description: IC FPGA 81 I/O 100TQFPDigiKey Programmable: Not Verified Number of I/O: 81 Number of LABs/CLBs: 2880 Supplier Device Package: 100-TQFP (14x14) Voltage - Supply: 2.25V ~ 5.25V Operating Temperature: -55°C ~ 125°C (TC) Number of Gates: 48000 Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 90 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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A54SX32A-1TQG144M | Microchip Technology |
Description: IC FPGA 113 I/O 144TQFPDigiKey Programmable: Not Verified Number of I/O: 113 Number of LABs/CLBs: 2880 Supplier Device Package: 144-TQFP (20x20) Voltage - Supply: 2.25V ~ 5.25V Operating Temperature: -55°C ~ 125°C (TC) Number of Gates: 48000 Mounting Type: Surface Mount Package / Case: 144-LQFP Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 60 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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APA300-FGG256M | Microchip Technology |
Description: IC FPGA 186 I/O 256FBGA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 90 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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APA300-PQG208M | Microchip Technology |
Description: IC FPGA 158 I/O 208QFPNumber of I/O: 158 Part Status: Active Total RAM Bits: 73728 Supplier Device Package: 208-PQFP (28x28) Voltage - Supply: 2.3V ~ 2.7V Operating Temperature: -55°C ~ 125°C (TC) Number of Gates: 300000 Mounting Type: Surface Mount Package / Case: 208-BFQFP Packaging: Tray DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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A54SX32A-CQ208M | Microchip Technology |
Description: IC FPGA 174 I/O 208CQFPDigiKey Programmable: Not Verified Number of I/O: 174 Number of LABs/CLBs: 2880 Supplier Device Package: 208-CQFP (75x75) Voltage - Supply: 2.25V ~ 5.25V Operating Temperature: -55°C ~ 125°C (TC) Number of Gates: 48000 Mounting Type: Surface Mount Package / Case: 208-BFCQFP with Tie Bar Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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APA600-CQ208M | Microchip Technology |
Description: IC FPGA 158 I/O 208CQFPDigiKey Programmable: Not Verified Number of I/O: 158 Total RAM Bits: 129024 Supplier Device Package: 208-CQFP (75x75) Voltage - Supply: 2.3V ~ 2.7V Operating Temperature: -55°C ~ 125°C (TC) Number of Gates: 600000 Mounting Type: Surface Mount Package / Case: 208-BFCQFP with Tie Bar Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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APA600-FG256M | Microchip Technology |
Description: IC FPGA 186 I/O 256FBGA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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APA600-FGG256M | Microchip Technology |
Description: IC FPGA 186 I/O 256FBGA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 90 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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A2F500M3G-FGG256M | Microchip Technology |
Description: IC SOC CORTEX-M3 80MHZ 256FBGA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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A54SX32A-FGG256M | Microchip Technology |
Description: IC FPGA 203 I/O 256FBGA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 90 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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A54SX16A-1PQ208M | Microchip Technology |
Description: IC FPGA 175 I/O 208QFPNumber of I/O: 175 Part Status: Obsolete Number of LABs/CLBs: 1452 Supplier Device Package: 208-PQFP (28x28) Voltage - Supply: 2.25V ~ 5.25V Operating Temperature: -55°C ~ 125°C (TC) Number of Gates: 24000 Mounting Type: Surface Mount Package / Case: 208-BFQFP Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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APA1000-BG456M | Microchip Technology |
Description: IC FPGA 356 I/O 456BGADigiKey Programmable: Not Verified Number of I/O: 356 Total RAM Bits: 202752 Supplier Device Package: 456-PBGA (35x35) Voltage - Supply: 2.3V ~ 2.7V Operating Temperature: -55°C ~ 125°C (TC) Number of Gates: 1000000 Mounting Type: Surface Mount Package / Case: 456-BBGA Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 24 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| APTGL60H120T3G | Microchip Technology |
Description: IGBT MODULE 1200V 80A 280W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 280 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 2.77 nF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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APT30DF100HJ | Microchip Technology |
Description: BRIDGE RECT 1P 1KV 45A SOT227Current - Reverse Leakage @ Vr: 100 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A Current - Average Rectified (Io): 45 A Voltage - Peak Reverse (Max): 1 kV Supplier Device Package: SOT-227 Technology: Standard Operating Temperature: -55°C ~ 175°C (TJ) Diode Type: Single Phase Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 54 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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APT30DF20HJ | Microchip Technology |
Description: BRIDGE RECT 1P 200V 45A SOT227Current - Reverse Leakage @ Vr: 250 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Average Rectified (Io): 45 A Voltage - Peak Reverse (Max): 200 V Supplier Device Package: SOT-227 Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 59 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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APT50DF170HJ | Microchip Technology |
Description: BRIDGE RECT 1P 1.7KV 50A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: SOT-227 (ISOTOP®) Part Status: Active Voltage - Peak Reverse (Max): 1.7 kV Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 50 A Current - Reverse Leakage @ Vr: 250 µA @ 1700 V |
auf Bestellung 84 Stücke: Lieferzeit 10-14 Tag (e) |
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APT40GL120JU3 | Microchip Technology |
Description: IGBT MOD 1200V 65A 220W SOT227Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 220 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 65 A IGBT Type: Trench Field Stop Supplier Device Package: SOT-227 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A Operating Temperature: -55°C ~ 175°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis, Stud Mount Package / Case: SOT-227-4, miniBLOC Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 42 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| APTGF150A60T3AG | Microchip Technology |
Description: IGBT MODULE 600V 230A 833W SP3Input Capacitance (Cies) @ Vce: 9 nF @ 25 V Current - Collector Cutoff (Max): 350 µA Power - Max: 833 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 230 A Part Status: Obsolete IGBT Type: NPT Supplier Device Package: SP3 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: SP3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| APTGF50DH120T3G | Microchip Technology |
Description: IGBT MODULE 1200V 70A 312W SP3Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 312 W Voltage - Collector Emitter Breakdown (Max): 1200 V Configuration: Asymmetrical Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: SP3 Packaging: Bulk Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A Current - Collector (Ic) (Max): 70 A IGBT Type: NPT Supplier Device Package: SP3 NTC Thermistor: Yes |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| APTGF50DSK120T3G | Microchip Technology |
Description: IGBT MODULE 1200V 70A 312W SP3Power - Max: 312 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 70 A IGBT Type: NPT Package / Case: SP3 Packaging: Bulk Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Supplier Device Package: SP3 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A Configuration: Dual Buck Chopper Input: Standard Mounting Type: Chassis Mount |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| APTGL120TDU120TPG | Microchip Technology |
Description: IGBT MODULE 1200V 140A 517W SP6POperating Temperature: -40°C ~ 175°C (TJ) Configuration: Triple, Dual - Common Source Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 517 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 140 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: SP6-P NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| APTGL40H120T1G | Microchip Technology |
Description: IGBT MODULE 1200V 65A 220W SP1 Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 220 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 65 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: SP1 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Full Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: SP1 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| APTGL40X120T3G | Microchip Technology |
Description: IGBT MODULE 1200V 65A 220W SP3Input: Standard Mounting Type: Chassis Mount Package / Case: SP3 Packaging: Bulk Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 220 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 65 A IGBT Type: Trench Field Stop Supplier Device Package: SP3 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Three Phase Inverter |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 11 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| APTGL90A120T1G | Microchip Technology |
Description: IGBT MODULE 1200V 110A 385W SP1Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 385 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 110 A IGBT Type: Trench Field Stop Supplier Device Package: SP1 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Half Bridge Input: Standard Mounting Type: Through Hole Package / Case: SP1 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| APTGL90DA120T1G | Microchip Technology |
Description: IGBT MODULE 1200V 110A 385W SP1Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 385 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 110 A IGBT Type: Trench Field Stop Supplier Device Package: SP1 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: SP1 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 19 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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APT90DR160HJ | Microchip Technology |
Description: BRIDGE RECT 1PHASE 1.6KV SOT-227Voltage - Peak Reverse (Max): 1.6 kV Supplier Device Package: SOT-227 Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Bulk Current - Reverse Leakage @ Vr: 50 µA @ 1600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 90 A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 43 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| APTGL90DDA120T3G | Microchip Technology |
Description: IGBT MODULE 1200V 110A 385W SP3Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 385 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 110 A IGBT Type: Trench Field Stop Supplier Device Package: SP3 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Dual Boost Chopper Input: Standard Mounting Type: Chassis Mount Package / Case: SP3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| APTGL90DSK120T3G | Microchip Technology |
Description: IGBT MODULE 1200V 110A 385W SP3Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 385 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 110 A IGBT Type: Trench Field Stop Supplier Device Package: SP3 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Dual Buck Chopper Input: Standard Mounting Type: Chassis Mount Package / Case: SP3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| APTGL90H120T3G | Microchip Technology |
Description: IGBT MODULE 1200V 110A 385W SP3Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 385 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 110 A IGBT Type: Trench Field Stop Supplier Device Package: SP3 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Full Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: SP3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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APTGT200DA60T3AG | Microchip Technology |
Description: IGBT MODULE 600V 290A 750W SP3Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 750 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 290 A IGBT Type: Trench Field Stop Supplier Device Package: SP3 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: SP3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 13 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| APTGT200SK60T3AG | Microchip Technology |
Description: IGBT MODULE 600V 290A 750W SP3Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 750 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 290 A IGBT Type: Trench Field Stop Supplier Device Package: SP3 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: SP3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 13 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| APTGT20TL601G | Microchip Technology |
Description: IGBT MODULE 600V 32A 62W SP1Input Capacitance (Cies) @ Vce: 1.1 pF @ 25 V Current - Collector Cutoff (Max): 250 µA Current - Collector (Ic) (Max): 32 A IGBT Type: Trench Field Stop Supplier Device Package: SP1 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Three Level Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: SP1 Packaging: Bulk Power - Max: 62 W Voltage - Collector Emitter Breakdown (Max): 600 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 19 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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APT60DF20HJ | Microchip Technology |
Description: BRIDGE RECT 1P 200V 90A SOT227Current - Reverse Leakage @ Vr: 250 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 60 A Current - Average Rectified (Io): 90 A Voltage - Peak Reverse (Max): 200 V Supplier Device Package: SOT-227 Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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APT75DF170HJ | Microchip Technology |
Description: BRIDGE RECT 1P 1.7KV 75A SOT227 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 24 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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APT75DL120HJ | Microchip Technology |
Description: BRIDGE RECT 1P 1.2KV 75A SOT227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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APT40GL120JU2 | Microchip Technology |
Description: IGBT MOD 1200V 65A 220W SOT227Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 220 W Voltage - Collector Emitter Breakdown (Max): 1200 V IGBT Type: Trench Field Stop Supplier Device Package: SOT-227 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A Operating Temperature: -55°C ~ 175°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis, Stud Mount Package / Case: SOT-227-4, miniBLOC Packaging: Bulk Current - Collector (Ic) (Max): 65 A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 42 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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APT13F120S | Microchip Technology |
Description: MOSFET N-CH 1200V 14A D3PAK |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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APT14F100S | Microchip Technology |
Description: MOSFET N-CH 1000V 14A D3PAKInput Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D3Pak Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 60 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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APT17F80S | Microchip Technology |
Description: MOSFET N-CH 800V 18A D3PAKInput Capacitance (Ciss) (Max) @ Vds: 3757 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D3Pak Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 580mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 70 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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APT37F50S | Microchip Technology |
Description: MOSFET N-CH 500V 37A D3PAKPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 70 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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APT33N90JCU2 | Microchip Technology |
Description: MOSFET N-CH 900V 33A SOT227 Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: SOT-227 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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APT33N90JCU3 | Microchip Technology |
Description: MOSFET N-CH 900V 33A SOT227 Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: SOT-227 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| APTC60DDAM45T1G | Microchip Technology |
Description: MOSFET 2N-CH 600V 49A SP1Packaging: Tray Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 2 N Channel (Dual Buck Chopper) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 49A Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: SP1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| APTC60DSKM24T3G | Microchip Technology |
Description: MOSFET 2N-CH 600V 95A SP3 Packaging: Tray Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 2 N Channel (Dual Buck Chopper) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 462W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 95A Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 5mA Supplier Device Package: SP3 Part Status: Active |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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| APTC60HM70BT3G | Microchip Technology |
Description: MOSFET 4N-CH 600V 39A SP3Packaging: Tray Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Supplier Device Package: SP3 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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APT30DQ60BHBG | Microchip Technology |
Description: DIODE ARRAY GP 600V 30A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A |
auf Bestellung 170 Stücke: Lieferzeit 10-14 Tag (e) |
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APT25GN120SG | Microchip Technology |
Description: IGBT 1200V 67A 272W D3PAKPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: D3Pak IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/280ns Test Condition: 800V, 25A, 1Ohm, 15V Gate Charge: 155 nC Current - Collector (Ic) (Max): 67 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 272 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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APT200GT60JR | Microchip Technology |
Description: IGBT MOD 600V 195A 500W SOT-227Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: NPT Current - Collector (Ic) (Max): 195 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 500 W Current - Collector Cutoff (Max): 25 µA Input Capacitance (Cies) @ Vce: 8.65 nF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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APT17F100S | Microchip Technology |
Description: MOSFET N-CH 1000V 17A D3PAKPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 780mOhm @ 9A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4845 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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APT42F50S | Microchip Technology |
Description: MOSFET N-CH 500V 42A D3PAKPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 21A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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APT30F50S | Microchip Technology |
Description: MOSFET N-CH 500V 30A D3PAKPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 14A, 10V Power Dissipation (Max): 415W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 90 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| APTC60VDAM45T1G | Microchip Technology |
Description: MOSFET 2N-CH 600V 49A SP1Supplier Device Package: SP1 Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Current - Continuous Drain (Id) @ 25°C: 49A Drain to Source Voltage (Vdss): 600V Power - Max: 250W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Chassis Mount Package / Case: SP1 Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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24LC128T-I/SN | Microchip Technology |
Description: IC EEPROM 128KBIT I2C 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 16K x 8 DigiKey Programmable: Verified |
auf Bestellung 5836 Stücke: Lieferzeit 10-14 Tag (e) |
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24LC32AT-I/SN | Microchip Technology |
Description: IC EEPROM 32KBIT I2C 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 4K x 8 DigiKey Programmable: Verified |
auf Bestellung 72509 Stücke: Lieferzeit 10-14 Tag (e) |
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LAN8710A-EZC-TR | Microchip Technology |
Description: IC TRANSCEIVER FULL 4/4 32QFNPackaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Type: Transceiver Operating Temperature: 0°C ~ 85°C Voltage - Supply: 1.6V ~ 3.6V Number of Drivers/Receivers: 4/4 Data Rate: 100Mbps Protocol: MII, RMII Supplier Device Package: 32-QFN (5x5) Duplex: Full Part Status: Active |
auf Bestellung 17931 Stücke: Lieferzeit 10-14 Tag (e) |
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LAN8710A-EZK-TR | Microchip Technology |
Description: IC TRANSCEIVER FULL 4/4 32QFNPackaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Type: Transceiver Operating Temperature: 0°C ~ 85°C Voltage - Supply: 1.6V ~ 3.6V Number of Drivers/Receivers: 4/4 Data Rate: 100Mbps Protocol: MII, RMII Supplier Device Package: 32-QFN (5x5) Duplex: Full Part Status: Active |
auf Bestellung 47545 Stücke: Lieferzeit 10-14 Tag (e) |
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LAN8720A-CP-TR | Microchip Technology |
Description: IC TRANSCEIVER FULL 2/2 24QFNPackaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Type: Transceiver Operating Temperature: 0°C ~ 85°C Voltage - Supply: 1.6V ~ 3.6V Number of Drivers/Receivers: 2/2 Data Rate: 100Mbps Protocol: MII, RMII Supplier Device Package: 24-QFN (4x4) Duplex: Full Part Status: Active |
auf Bestellung 2612 Stücke: Lieferzeit 10-14 Tag (e) |
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MCP23S17T-E/SS | Microchip Technology |
Description: IC XPNDR 10MHZ SPI 28SSOPPackaging: Cut Tape (CT) Package / Case: 28-SSOP (0.209", 5.30mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Interface: SPI Number of I/O: 16 Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.8V ~ 5.5V Clock Frequency: 10 MHz Interrupt Output: Yes Supplier Device Package: 28-SSOP Current - Output Source/Sink: 25mA Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 32994 Stücke: Lieferzeit 10-14 Tag (e) |
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| A54SX32A-1FG256M |
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Hersteller: Microchip Technology
Description: IC FPGA 203 I/O 256FBGA
Description: IC FPGA 203 I/O 256FBGA
Produkt ist nicht verfügbar
Mindestbestellmenge: 90 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| A54SX32A-1FGG256M |
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Hersteller: Microchip Technology
Description: IC FPGA 203 I/O 256FBGA
Description: IC FPGA 203 I/O 256FBGA
Produkt ist nicht verfügbar
Mindestbestellmenge: 90 Stücke
Im Einkaufswagen
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| A54SX32A-1TQG100M |
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Hersteller: Microchip Technology
Description: IC FPGA 81 I/O 100TQFP
DigiKey Programmable: Not Verified
Number of I/O: 81
Number of LABs/CLBs: 2880
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 2.25V ~ 5.25V
Operating Temperature: -55°C ~ 125°C (TC)
Number of Gates: 48000
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Description: IC FPGA 81 I/O 100TQFP
DigiKey Programmable: Not Verified
Number of I/O: 81
Number of LABs/CLBs: 2880
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 2.25V ~ 5.25V
Operating Temperature: -55°C ~ 125°C (TC)
Number of Gates: 48000
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 90 Stücke
Im Einkaufswagen
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| A54SX32A-1TQG144M |
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Hersteller: Microchip Technology
Description: IC FPGA 113 I/O 144TQFP
DigiKey Programmable: Not Verified
Number of I/O: 113
Number of LABs/CLBs: 2880
Supplier Device Package: 144-TQFP (20x20)
Voltage - Supply: 2.25V ~ 5.25V
Operating Temperature: -55°C ~ 125°C (TC)
Number of Gates: 48000
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
Description: IC FPGA 113 I/O 144TQFP
DigiKey Programmable: Not Verified
Number of I/O: 113
Number of LABs/CLBs: 2880
Supplier Device Package: 144-TQFP (20x20)
Voltage - Supply: 2.25V ~ 5.25V
Operating Temperature: -55°C ~ 125°C (TC)
Number of Gates: 48000
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 60 Stücke
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| APA300-FGG256M |
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Hersteller: Microchip Technology
Description: IC FPGA 186 I/O 256FBGA
Description: IC FPGA 186 I/O 256FBGA
Produkt ist nicht verfügbar
Mindestbestellmenge: 90 Stücke
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| APA300-PQG208M |
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Hersteller: Microchip Technology
Description: IC FPGA 158 I/O 208QFP
Number of I/O: 158
Part Status: Active
Total RAM Bits: 73728
Supplier Device Package: 208-PQFP (28x28)
Voltage - Supply: 2.3V ~ 2.7V
Operating Temperature: -55°C ~ 125°C (TC)
Number of Gates: 300000
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC FPGA 158 I/O 208QFP
Number of I/O: 158
Part Status: Active
Total RAM Bits: 73728
Supplier Device Package: 208-PQFP (28x28)
Voltage - Supply: 2.3V ~ 2.7V
Operating Temperature: -55°C ~ 125°C (TC)
Number of Gates: 300000
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| A54SX32A-CQ208M |
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Hersteller: Microchip Technology
Description: IC FPGA 174 I/O 208CQFP
DigiKey Programmable: Not Verified
Number of I/O: 174
Number of LABs/CLBs: 2880
Supplier Device Package: 208-CQFP (75x75)
Voltage - Supply: 2.25V ~ 5.25V
Operating Temperature: -55°C ~ 125°C (TC)
Number of Gates: 48000
Mounting Type: Surface Mount
Package / Case: 208-BFCQFP with Tie Bar
Packaging: Tray
Description: IC FPGA 174 I/O 208CQFP
DigiKey Programmable: Not Verified
Number of I/O: 174
Number of LABs/CLBs: 2880
Supplier Device Package: 208-CQFP (75x75)
Voltage - Supply: 2.25V ~ 5.25V
Operating Temperature: -55°C ~ 125°C (TC)
Number of Gates: 48000
Mounting Type: Surface Mount
Package / Case: 208-BFCQFP with Tie Bar
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APA600-CQ208M |
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Hersteller: Microchip Technology
Description: IC FPGA 158 I/O 208CQFP
DigiKey Programmable: Not Verified
Number of I/O: 158
Total RAM Bits: 129024
Supplier Device Package: 208-CQFP (75x75)
Voltage - Supply: 2.3V ~ 2.7V
Operating Temperature: -55°C ~ 125°C (TC)
Number of Gates: 600000
Mounting Type: Surface Mount
Package / Case: 208-BFCQFP with Tie Bar
Packaging: Tray
Description: IC FPGA 158 I/O 208CQFP
DigiKey Programmable: Not Verified
Number of I/O: 158
Total RAM Bits: 129024
Supplier Device Package: 208-CQFP (75x75)
Voltage - Supply: 2.3V ~ 2.7V
Operating Temperature: -55°C ~ 125°C (TC)
Number of Gates: 600000
Mounting Type: Surface Mount
Package / Case: 208-BFCQFP with Tie Bar
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APA600-FG256M |
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Hersteller: Microchip Technology
Description: IC FPGA 186 I/O 256FBGA
Description: IC FPGA 186 I/O 256FBGA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APA600-FGG256M |
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Hersteller: Microchip Technology
Description: IC FPGA 186 I/O 256FBGA
Description: IC FPGA 186 I/O 256FBGA
Produkt ist nicht verfügbar
Mindestbestellmenge: 90 Stücke
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| A2F500M3G-FGG256M |
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Hersteller: Microchip Technology
Description: IC SOC CORTEX-M3 80MHZ 256FBGA
Description: IC SOC CORTEX-M3 80MHZ 256FBGA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| A54SX32A-FGG256M |
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Hersteller: Microchip Technology
Description: IC FPGA 203 I/O 256FBGA
Description: IC FPGA 203 I/O 256FBGA
Produkt ist nicht verfügbar
Mindestbestellmenge: 90 Stücke
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| A54SX16A-1PQ208M |
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Hersteller: Microchip Technology
Description: IC FPGA 175 I/O 208QFP
Number of I/O: 175
Part Status: Obsolete
Number of LABs/CLBs: 1452
Supplier Device Package: 208-PQFP (28x28)
Voltage - Supply: 2.25V ~ 5.25V
Operating Temperature: -55°C ~ 125°C (TC)
Number of Gates: 24000
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Packaging: Tray
Description: IC FPGA 175 I/O 208QFP
Number of I/O: 175
Part Status: Obsolete
Number of LABs/CLBs: 1452
Supplier Device Package: 208-PQFP (28x28)
Voltage - Supply: 2.25V ~ 5.25V
Operating Temperature: -55°C ~ 125°C (TC)
Number of Gates: 24000
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APA1000-BG456M |
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Hersteller: Microchip Technology
Description: IC FPGA 356 I/O 456BGA
DigiKey Programmable: Not Verified
Number of I/O: 356
Total RAM Bits: 202752
Supplier Device Package: 456-PBGA (35x35)
Voltage - Supply: 2.3V ~ 2.7V
Operating Temperature: -55°C ~ 125°C (TC)
Number of Gates: 1000000
Mounting Type: Surface Mount
Package / Case: 456-BBGA
Packaging: Tray
Description: IC FPGA 356 I/O 456BGA
DigiKey Programmable: Not Verified
Number of I/O: 356
Total RAM Bits: 202752
Supplier Device Package: 456-PBGA (35x35)
Voltage - Supply: 2.3V ~ 2.7V
Operating Temperature: -55°C ~ 125°C (TC)
Number of Gates: 1000000
Mounting Type: Surface Mount
Package / Case: 456-BBGA
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 24 Stücke
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| APTGL60H120T3G |
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 80A 280W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.77 nF @ 25 V
Description: IGBT MODULE 1200V 80A 280W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.77 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 12 Stücke
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| APT30DF100HJ |
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Hersteller: Microchip Technology
Description: BRIDGE RECT 1P 1KV 45A SOT227
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Average Rectified (Io): 45 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: SOT-227
Technology: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Diode Type: Single Phase
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Description: BRIDGE RECT 1P 1KV 45A SOT227
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Average Rectified (Io): 45 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: SOT-227
Technology: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Diode Type: Single Phase
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
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| APT30DF20HJ |
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Hersteller: Microchip Technology
Description: BRIDGE RECT 1P 200V 45A SOT227
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Average Rectified (Io): 45 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: SOT-227
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Description: BRIDGE RECT 1P 200V 45A SOT227
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Average Rectified (Io): 45 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: SOT-227
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
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| APT50DF170HJ |
Hersteller: Microchip Technology
Description: BRIDGE RECT 1P 1.7KV 50A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227 (ISOTOP®)
Part Status: Active
Voltage - Peak Reverse (Max): 1.7 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 50 A
Current - Reverse Leakage @ Vr: 250 µA @ 1700 V
Description: BRIDGE RECT 1P 1.7KV 50A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227 (ISOTOP®)
Part Status: Active
Voltage - Peak Reverse (Max): 1.7 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 50 A
Current - Reverse Leakage @ Vr: 250 µA @ 1700 V
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| Anzahl | Preis |
|---|---|
| 1+ | 46.53 EUR |
| APT40GL120JU3 |
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Hersteller: Microchip Technology
Description: IGBT MOD 1200V 65A 220W SOT227
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 220 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 65 A
IGBT Type: Trench Field Stop
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis, Stud Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Description: IGBT MOD 1200V 65A 220W SOT227
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 220 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 65 A
IGBT Type: Trench Field Stop
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis, Stud Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTGF150A60T3AG |
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Hersteller: Microchip Technology
Description: IGBT MODULE 600V 230A 833W SP3
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 833 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 230 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Description: IGBT MODULE 600V 230A 833W SP3
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 833 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 230 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTGF50DH120T3G |
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Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 70A 312W SP3
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 312 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Configuration: Asymmetrical Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Current - Collector (Ic) (Max): 70 A
IGBT Type: NPT
Supplier Device Package: SP3
NTC Thermistor: Yes
Description: IGBT MODULE 1200V 70A 312W SP3
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 312 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Configuration: Asymmetrical Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Current - Collector (Ic) (Max): 70 A
IGBT Type: NPT
Supplier Device Package: SP3
NTC Thermistor: Yes
Produkt ist nicht verfügbar
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| APTGF50DSK120T3G |
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Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 70A 312W SP3
Power - Max: 312 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 70 A
IGBT Type: NPT
Package / Case: SP3
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Configuration: Dual Buck Chopper
Input: Standard
Mounting Type: Chassis Mount
Description: IGBT MODULE 1200V 70A 312W SP3
Power - Max: 312 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 70 A
IGBT Type: NPT
Package / Case: SP3
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Configuration: Dual Buck Chopper
Input: Standard
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar
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| APTGL120TDU120TPG |
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Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 140A 517W SP6P
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Triple, Dual - Common Source
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 517 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 140 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: SP6-P
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
Description: IGBT MODULE 1200V 140A 517W SP6P
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Triple, Dual - Common Source
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 517 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 140 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: SP6-P
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
Produkt ist nicht verfügbar
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| APTGL40H120T1G |
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 65A 220W SP1
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 220 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 65 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Description: IGBT MODULE 1200V 65A 220W SP1
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 220 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 65 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTGL40X120T3G |
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Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 65A 220W SP3
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 220 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 65 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Description: IGBT MODULE 1200V 65A 220W SP3
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 220 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 65 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
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| APTGL90A120T1G |
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Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 110A 385W SP1
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 385 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 110 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Through Hole
Package / Case: SP1
Packaging: Bulk
Description: IGBT MODULE 1200V 110A 385W SP1
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 385 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 110 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Through Hole
Package / Case: SP1
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTGL90DA120T1G |
![]() |
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 110A 385W SP1
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 385 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 110 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Description: IGBT MODULE 1200V 110A 385W SP1
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 385 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 110 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Produkt ist nicht verfügbar
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| APT90DR160HJ |
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Hersteller: Microchip Technology
Description: BRIDGE RECT 1PHASE 1.6KV SOT-227
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: SOT-227
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 90 A
Description: BRIDGE RECT 1PHASE 1.6KV SOT-227
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: SOT-227
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 90 A
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| APTGL90DDA120T3G |
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Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 110A 385W SP3
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 385 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 110 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Dual Boost Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Description: IGBT MODULE 1200V 110A 385W SP3
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 385 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 110 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Dual Boost Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTGL90DSK120T3G |
![]() |
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 110A 385W SP3
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 385 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 110 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Dual Buck Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Description: IGBT MODULE 1200V 110A 385W SP3
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 385 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 110 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Dual Buck Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTGL90H120T3G |
![]() |
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 110A 385W SP3
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 385 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 110 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Description: IGBT MODULE 1200V 110A 385W SP3
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 385 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 110 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTGT200DA60T3AG |
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Hersteller: Microchip Technology
Description: IGBT MODULE 600V 290A 750W SP3
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 750 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 290 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Description: IGBT MODULE 600V 290A 750W SP3
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 750 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 290 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTGT200SK60T3AG |
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Hersteller: Microchip Technology
Description: IGBT MODULE 600V 290A 750W SP3
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 750 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 290 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Description: IGBT MODULE 600V 290A 750W SP3
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 750 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 290 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTGT20TL601G |
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Hersteller: Microchip Technology
Description: IGBT MODULE 600V 32A 62W SP1
Input Capacitance (Cies) @ Vce: 1.1 pF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Current - Collector (Ic) (Max): 32 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP1
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Power - Max: 62 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Description: IGBT MODULE 600V 32A 62W SP1
Input Capacitance (Cies) @ Vce: 1.1 pF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Current - Collector (Ic) (Max): 32 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP1
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Power - Max: 62 W
Voltage - Collector Emitter Breakdown (Max): 600 V
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| APT60DF20HJ |
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Hersteller: Microchip Technology
Description: BRIDGE RECT 1P 200V 90A SOT227
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 60 A
Current - Average Rectified (Io): 90 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: SOT-227
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Description: BRIDGE RECT 1P 200V 90A SOT227
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 60 A
Current - Average Rectified (Io): 90 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: SOT-227
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
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| APT75DF170HJ |
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Hersteller: Microchip Technology
Description: BRIDGE RECT 1P 1.7KV 75A SOT227
Description: BRIDGE RECT 1P 1.7KV 75A SOT227
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| APT75DL120HJ |
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Hersteller: Microchip Technology
Description: BRIDGE RECT 1P 1.2KV 75A SOT227
Description: BRIDGE RECT 1P 1.2KV 75A SOT227
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| APT40GL120JU2 |
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Hersteller: Microchip Technology
Description: IGBT MOD 1200V 65A 220W SOT227
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 220 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
IGBT Type: Trench Field Stop
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis, Stud Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Current - Collector (Ic) (Max): 65 A
Description: IGBT MOD 1200V 65A 220W SOT227
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 220 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
IGBT Type: Trench Field Stop
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis, Stud Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Current - Collector (Ic) (Max): 65 A
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| APT13F120S |
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Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 14A D3PAK
Description: MOSFET N-CH 1200V 14A D3PAK
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| APT14F100S |
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Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 14A D3PAK
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Description: MOSFET N-CH 1000V 14A D3PAK
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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| APT17F80S |
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Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 18A D3PAK
Input Capacitance (Ciss) (Max) @ Vds: 3757 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Description: MOSFET N-CH 800V 18A D3PAK
Input Capacitance (Ciss) (Max) @ Vds: 3757 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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| APT37F50S |
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Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 37A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 25 V
Description: MOSFET N-CH 500V 37A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 25 V
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| APT33N90JCU2 |
Hersteller: Microchip Technology
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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| APT33N90JCU3 |
Hersteller: Microchip Technology
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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| APTC60DDAM45T1G |
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Hersteller: Microchip Technology
Description: MOSFET 2N-CH 600V 49A SP1
Packaging: Tray
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Dual Buck Chopper)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SP1
Description: MOSFET 2N-CH 600V 49A SP1
Packaging: Tray
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Dual Buck Chopper)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SP1
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| APTC60DSKM24T3G |
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 600V 95A SP3
Packaging: Tray
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Dual Buck Chopper)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 462W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 95A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP3
Part Status: Active
Description: MOSFET 2N-CH 600V 95A SP3
Packaging: Tray
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Dual Buck Chopper)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 462W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 95A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP3
Part Status: Active
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 146.63 EUR |
| APTC60HM70BT3G |
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Hersteller: Microchip Technology
Description: MOSFET 4N-CH 600V 39A SP3
Packaging: Tray
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: SP3
Description: MOSFET 4N-CH 600V 39A SP3
Packaging: Tray
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: SP3
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| APT30DQ60BHBG |
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Hersteller: Microchip Technology
Description: DIODE ARRAY GP 600V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Description: DIODE ARRAY GP 600V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.83 EUR |
| 100+ | 6.36 EUR |
| APT25GN120SG |
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Hersteller: Microchip Technology
Description: IGBT 1200V 67A 272W D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: D3Pak
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/280ns
Test Condition: 800V, 25A, 1Ohm, 15V
Gate Charge: 155 nC
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 272 W
Description: IGBT 1200V 67A 272W D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: D3Pak
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/280ns
Test Condition: 800V, 25A, 1Ohm, 15V
Gate Charge: 155 nC
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 272 W
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| APT200GT60JR |
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Hersteller: Microchip Technology
Description: IGBT MOD 600V 195A 500W SOT-227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 195 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 8.65 nF @ 25 V
Description: IGBT MOD 600V 195A 500W SOT-227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 195 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 8.65 nF @ 25 V
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| APT17F100S |
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Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 17A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 9A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4845 pF @ 25 V
Description: MOSFET N-CH 1000V 17A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 9A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4845 pF @ 25 V
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| APT42F50S |
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Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 42A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 21A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 25 V
Description: MOSFET N-CH 500V 42A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 21A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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| APT30F50S |
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Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 30A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 14A, 10V
Power Dissipation (Max): 415W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 25 V
Description: MOSFET N-CH 500V 30A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 14A, 10V
Power Dissipation (Max): 415W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 90 Stücke
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| APTC60VDAM45T1G |
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Hersteller: Microchip Technology
Description: MOSFET 2N-CH 600V 49A SP1
Supplier Device Package: SP1
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 49A
Drain to Source Voltage (Vdss): 600V
Power - Max: 250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Tray
Description: MOSFET 2N-CH 600V 49A SP1
Supplier Device Package: SP1
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 49A
Drain to Source Voltage (Vdss): 600V
Power - Max: 250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 14 Stücke
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| 24LC128T-I/SN |
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Hersteller: Microchip Technology
Description: IC EEPROM 128KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 16K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 128KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 16K x 8
DigiKey Programmable: Verified
auf Bestellung 5836 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.21 EUR |
| 24LC32AT-I/SN |
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Hersteller: Microchip Technology
Description: IC EEPROM 32KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 32KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Verified
auf Bestellung 72509 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 0.76 EUR |
| LAN8710A-EZC-TR |
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Hersteller: Microchip Technology
Description: IC TRANSCEIVER FULL 4/4 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Number of Drivers/Receivers: 4/4
Data Rate: 100Mbps
Protocol: MII, RMII
Supplier Device Package: 32-QFN (5x5)
Duplex: Full
Part Status: Active
Description: IC TRANSCEIVER FULL 4/4 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Number of Drivers/Receivers: 4/4
Data Rate: 100Mbps
Protocol: MII, RMII
Supplier Device Package: 32-QFN (5x5)
Duplex: Full
Part Status: Active
auf Bestellung 17931 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.67 EUR |
| 25+ | 1.65 EUR |
| LAN8710A-EZK-TR |
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Hersteller: Microchip Technology
Description: IC TRANSCEIVER FULL 4/4 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Number of Drivers/Receivers: 4/4
Data Rate: 100Mbps
Protocol: MII, RMII
Supplier Device Package: 32-QFN (5x5)
Duplex: Full
Part Status: Active
Description: IC TRANSCEIVER FULL 4/4 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Number of Drivers/Receivers: 4/4
Data Rate: 100Mbps
Protocol: MII, RMII
Supplier Device Package: 32-QFN (5x5)
Duplex: Full
Part Status: Active
auf Bestellung 47545 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.7 EUR |
| 10+ | 2.75 EUR |
| 25+ | 2.51 EUR |
| 100+ | 2.25 EUR |
| LAN8720A-CP-TR |
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Hersteller: Microchip Technology
Description: IC TRANSCEIVER FULL 2/2 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Number of Drivers/Receivers: 2/2
Data Rate: 100Mbps
Protocol: MII, RMII
Supplier Device Package: 24-QFN (4x4)
Duplex: Full
Part Status: Active
Description: IC TRANSCEIVER FULL 2/2 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Number of Drivers/Receivers: 2/2
Data Rate: 100Mbps
Protocol: MII, RMII
Supplier Device Package: 24-QFN (4x4)
Duplex: Full
Part Status: Active
auf Bestellung 2612 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.55 EUR |
| 25+ | 1.51 EUR |
| MCP23S17T-E/SS |
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Hersteller: Microchip Technology
Description: IC XPNDR 10MHZ SPI 28SSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: SPI
Number of I/O: 16
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 5.5V
Clock Frequency: 10 MHz
Interrupt Output: Yes
Supplier Device Package: 28-SSOP
Current - Output Source/Sink: 25mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 10MHZ SPI 28SSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: SPI
Number of I/O: 16
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 5.5V
Clock Frequency: 10 MHz
Interrupt Output: Yes
Supplier Device Package: 28-SSOP
Current - Output Source/Sink: 25mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 32994 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.66 EUR |
| 25+ | 2.23 EUR |
| 100+ | 2.17 EUR |















