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1N4581A-1 1N4581A-1 Microchip Technology 1N4565-1N4585A-1.pdf Description: DIODE ZENER 6.4V 500MW DO204AH
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 6.4 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N4621UR-1 1N4621UR-1 Microchip Technology 1N4614-1-1n4627e3-1N4099-1-1N4135-1.pdf Description: DIODE ZENER 3.6V 500MW DO213AA
Current - Reverse Leakage @ Vr: 3.5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 1700 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
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1N4691 1N4691 Microchip Technology 1N4678-1N4717.pdf Description: DIODE ZENER 6.2V 500MW DO35
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N4996US 1N4996US Microchip Technology 1N4954US-96US%2C1N5968US-69US%2C1N6632US-1N6637US.pdf Description: DIODE ZENER 390V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 390 V
Impedance (Max) (Zzt): 1800 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 297 V
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1N5231BUR-1 1N5231BUR-1 Microchip Technology 1N5221UR-1N5281BUR-E3.pdf Description: DIODE ZENER 5.1V 500MW DO213AA
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 17 Ohms
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1N5234A 1N5234A Microchip Technology 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 6.2V 500MW DO35
Current - Reverse Leakage @ Vr: 5 µA @ 3.8 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±10%
Packaging: Bulk
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1N5281B 1N5281B Microchip Technology 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 200V 500MW DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 152 V
Tolerance: ±5%
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 2500 Ohms
Power - Max: 500 mW
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1N5300-1 1N5300-1 Microchip Technology 1N5283-1_1N5314-1.pdf Description: DIODE CUR REG 100V 1.43MA 500MW
Voltage - Limiting (Max): 1.5V
Regulator Current (Max): 1.43mA
Voltage - Anode - Cathode (Vak)(Max): 100V
Power - Max: 500mW
Supplier Device Package: DO-7
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AA, DO-7, Axial
Packaging: Bulk
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1N5331 1N5331 Microchip Technology S%2CR21.pdf Description: DIODE STANDARD 1400V 22A DO4
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 22A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
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1N5419E3 1N5419E3 Microchip Technology LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 500V 3A B AXIAL
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
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1N5523BUR-1 1N5523BUR-1 Microchip Technology 8860-lds-0037-datasheet Description: DIODE ZENER 5.1V 500MW DO213AA
Current - Reverse Leakage @ Vr: 2 µA @ 2.5 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 26 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
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1N5532BUR-1 1N5532BUR-1 Microchip Technology 1N5518BUR-1_1N5546BUR-1.pdf Description: DIODE ZENER 12V 500MW DO213AA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
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1N5711-1 1N5711-1 Microchip Technology LDS-0040_r4%2C+1N5711-12_1N6857-58_DSB2810_5712%2C+MIL-PRF-19500-444.pdf Description: DIODE SCHOTTKY 70V 33MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
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1N5822US 1N5822US Microchip Technology LDS-0303-1%2C+1N5820US-1N5822US%2C1N6864US%2C+MIL-PRF-19500-620.pdf Description: DIODE SCHOTTKY 40V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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1N5907 1N5907 Microchip Technology 8921-lds-0095-datasheet Description: TVS DIODE 5VWM 8.5VC DO13
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 8.5V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: DO-13 (DO-202AA)
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 120A
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-202AA, DO-13, Axial
Packaging: Bulk
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1N6316US 1N6316US Microchip Technology 11083-lds-0193-1-datasheet Description: DIODE ZENER 4.7V 500MW SQ-MELF
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: B, SQ-MELF
Impedance (Max) (Zzt): 1500 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
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1N6325US 1N6325US Microchip Technology lds-0193-1%2C+1N6309US-55US.pdf Description: DIODE ZENER 11V 500MW SQ-MELF
Current - Reverse Leakage @ Vr: 1 µA @ 8.5 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Power - Max: 500 mW
Supplier Device Package: B, SQ-MELF
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Tolerance: ±5%
Packaging: Bulk
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1N6334US 1N6334US Microchip Technology lds-0193-1%2C+1N6309US-55US.pdf Description: DIODE ZENER 27V 500MW SQ-MELF
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1N6335US 1N6335US Microchip Technology 11083-lds-0193-1-datasheet Description: DIODE ZENER 30V 500MW MELF
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1N6392 1N6392 Microchip Technology 8886-lds-0053-datasheet Description: DIODE SCHOTTKY 45V 54A DO5
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1N6490US 1N6490US Microchip Technology 124793-lds-0183-1-datasheet Description: DIODE ZENER 5.1V 1.5W D5A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 1.5 W
Supplier Device Package: D-5A
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Tolerance: ±5%
Packaging: Bulk
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1N6640US 1N6640US Microchip Technology 1N6639US%2C_1N6640US%2C_1N6641US.pdf Description: DIODE STANDARD 75V 300MA D5D
Packaging: Bulk
Package / Case: SQ-MELF, D
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 300mA
Supplier Device Package: D-5D
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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1N6643US 1N6643US Microchip Technology 5895-1n6638-42-43us-datasheet Description: DIODE GEN PURP 50V 300MA D5B
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1N6659 1N6659 Microchip Technology 8910-lds-0068-datasheet Description: DIODE ARRAY GP 200V 15A TO254AA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Supplier Device Package: TO-254AA
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Packaging: Bulk
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1N6663US 1N6663US Microchip Technology 11107-sd88a-datasheet Description: DIODE GEN PURP 600V 500MA D5A
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1N747A 1N747A Microchip Technology 1N746A-1-1N759A-1%2C1N4370A-1-1N4372A-1.pdf Description: DIODE ZENER 3.6V 500MW DO7
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-7 (DO-204AA)
Impedance (Max) (Zzt): 24 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AA, DO-7, Axial
Tolerance: ±5%
Packaging: Bulk
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1N936A 1N936A Microchip Technology 1N935B-1_1N938B-1.pdf Description: DIODE ZENER 9V 500MW DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
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1N936B 1N936B Microchip Technology 1N935B-1_1N938B-1.pdf Description: DIODE ZENER 9V 500MW DO204AH
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 9 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
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1N938B 1N938B Microchip Technology 1N935B-1_1N938B-1.pdf Description: DIODE ZENER 9V 500MW DO204AH
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 9 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
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1N945B 1N945B Microchip Technology 124507-lds-0222-datasheet Description: DIODE ZENER 11.7V 500MW DO35
Current - Reverse Leakage @ Vr: 15 µA @ 8 V
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 11.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Bulk
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1N965BE3 1N965BE3 Microchip Technology 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf Description: DIODE ZENER 15V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
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1N971BE3 1N971BE3 Microchip Technology 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf Description: DIODE ZENER 27V 500MW DO204AH
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 41 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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2N2323S 2N2323S Microchip Technology 6024-2n2323-datasheet Description: SCR 50V TO5
Supplier Device Package: TO-5
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 2 mA
Operating Temperature: -65°C ~ 125°C
SCR Type: Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Voltage - Off State: 50 V
Part Status: Obsolete
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2N3637UB 2N3637UB Microchip Technology 2N3634-2N3637UB-LDS-0156-MIL-PRF-19500-357.pdf Description: TRANS PNP 175V 1A UB
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 175 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tray
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2N3778 2N3778 Microchip Technology 2N3778_Web.pdf Description: TRANS PNP TO-5
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2N6193 2N6193 Microchip Technology 6106-2n6193-datasheet Description: TRANS PNP 100V 5A TO39
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
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2N6317 2N6317 Microchip Technology 125208-lds-0283-datasheet Description: TRANS PNP 60V 7A TO-213AA
Power - Max: 90 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 7 A
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2.5A, 4V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 1.75A, 7A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
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S3480 S3480 Microchip Technology 8542-coe-23-datasheet Description: DIODE GEN PURP 800V 45A DO203AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 90 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: DO-203AB (DO-5)
Current - Average Rectified (Io): 45A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
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SBR60100 SBR60100 Microchip Technology Description: DIODE SCHOTTKY 100V 60A DO5
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 60A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
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SBR6030L Microchip Technology Description: DIODE SCHOTTKY 30V 60A DO203AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-203AB (DO-5)
Current - Average Rectified (Io): 60A
Technology: Schottky
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UES1002 UES1002 Microchip Technology WT2-61_UES1001-1003.PDF Description: DIODE STANDARD 100V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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UES1102SM UES1102SM Microchip Technology UES1102SM_Web.pdf Description: DIODE GEN PURP 100V 2.5A A-MELF
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UES1103 UES1103 Microchip Technology 11536-wt2-63-datasheet Description: DIODE STANDARD 150V 2.5AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 2.5A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
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UES1103SM UES1103SM Microchip Technology Description: DIODE GEN PURP 150V 2.5A A-MELF
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: A-MELF
Current - Average Rectified (Io): 2.5A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
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UES1104 Microchip Technology Description: DIODE STANDARD 200V 1A AXIAL
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
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UES1106 UES1106 Microchip Technology 11537-wt2-65-datasheet Description: DIODE GEN PURP 400V 1A AXIAL
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
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UES1303 UES1303 Microchip Technology 11538-wt2-68-datasheet Description: DIODE GEN PURP 150V 6A AXIAL
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UES706HR2 UES706HR2 Microchip Technology 11292-ues704-6-datasheet Description: DIODE GEN PURP 400V 20A DO4
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
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UFR3020 UFR3020 Microchip Technology cod-47.pdf Description: DIODE STANDARD 200V 30A DO4
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 140pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
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CDLL5246BE3 Microchip Technology Description: DIODE ZENER 16V DO-213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-213AA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
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CDLL5312 CDLL5312 Microchip Technology 1N5283UR-1_1N5314UR-1.pdf Description: DIODE CUR REG 100V 4.29MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 4.29mA
Voltage - Limiting (Max): 2.6V
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JAN1N3174 JAN1N3174 Microchip Technology 8953-lds-0140-pdf Description: DIODE STD 1000V 300A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
Qualification: MIL-PRF-19500/211
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JAN1N3595-1 Microchip Technology Description: DIODE STD 125V 150MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
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JAN1N4125-1 JAN1N4125-1 Microchip Technology 129734-lds-0245-2-datasheet Description: DIODE ZENER 47V 500MW DO35
Current - Reverse Leakage @ Vr: 10 nA @ 35.8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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JAN1N4150UR-1 JAN1N4150UR-1 Microchip Technology 1N4150.pdf Description: DIODE STANDARD 50V 200MA DO213AA
Qualification: MIL-PRF-19500/231
Grade: Military
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Current - Average Rectified (Io): 200mA
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Bulk
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JAN1N4153-1 Microchip Technology Description: DIODE STANDARD 75V 150MA DO204AH
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JAN1N4481 JAN1N4481 Microchip Technology 1N4460-1N4496.1N6485-1N6491.pdf Description: DIODE ZENER 47V 1.5W DO204AL
Qualification: MIL-PRF-19500/406
Current - Reverse Leakage @ Vr: 50 nA @ 37.6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 1.5 W
Grade: Military
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Bulk
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JAN1N5283-1 JAN1N5283-1 Microchip Technology 8970-lds-0159-pdf Description: DIODE CUR REG 100V 242UA 500MW
Qualification: MIL-PRF-19500/463
Voltage - Limiting (Max): 1V
Regulator Current (Max): 242µA
Voltage - Anode - Cathode (Vak)(Max): 100V
Power - Max: 500mW
Grade: Military
Supplier Device Package: DO-7
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AA, DO-7, Axial
Packaging: Bulk
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JAN1N5554US JAN1N5554US Microchip Technology 10966-sa7-43-datasheet Description: DIODE GEN PURP 1KV 5A D-5B
Qualification: MIL-PRF-19500/420
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
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JAN1N5615US JAN1N5615US Microchip Technology 11062-sd47a-datasheet Description: DIODE GEN PURP 200V 1A D-5A
Qualification: MIL-PRF-19500/429
Grade: Military
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
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1N4581A-1 1N4565-1N4585A-1.pdf
1N4581A-1
Hersteller: Microchip Technology
Description: DIODE ZENER 6.4V 500MW DO204AH
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 6.4 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N4621UR-1 1N4614-1-1n4627e3-1N4099-1-1N4135-1.pdf
1N4621UR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 3.6V 500MW DO213AA
Current - Reverse Leakage @ Vr: 3.5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 1700 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N4691 1N4678-1N4717.pdf
1N4691
Hersteller: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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3+7.08 EUR
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1N4996US 1N4954US-96US%2C1N5968US-69US%2C1N6632US-1N6637US.pdf
1N4996US
Hersteller: Microchip Technology
Description: DIODE ZENER 390V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 390 V
Impedance (Max) (Zzt): 1800 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 297 V
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1N5231BUR-1 1N5221UR-1N5281BUR-E3.pdf
1N5231BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO213AA
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 17 Ohms
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4+6.18 EUR
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1N5234A 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5234A
Hersteller: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Current - Reverse Leakage @ Vr: 5 µA @ 3.8 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±10%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5281B 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5281B
Hersteller: Microchip Technology
Description: DIODE ZENER 200V 500MW DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 152 V
Tolerance: ±5%
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 2500 Ohms
Power - Max: 500 mW
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4+6.26 EUR
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1N5300-1 1N5283-1_1N5314-1.pdf
1N5300-1
Hersteller: Microchip Technology
Description: DIODE CUR REG 100V 1.43MA 500MW
Voltage - Limiting (Max): 1.5V
Regulator Current (Max): 1.43mA
Voltage - Anode - Cathode (Vak)(Max): 100V
Power - Max: 500mW
Supplier Device Package: DO-7
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AA, DO-7, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5331 S%2CR21.pdf
1N5331
Hersteller: Microchip Technology
Description: DIODE STANDARD 1400V 22A DO4
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 22A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5419E3 LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf
1N5419E3
Hersteller: Microchip Technology
Description: DIODE STANDARD 500V 3A B AXIAL
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
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1N5523BUR-1 8860-lds-0037-datasheet
1N5523BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO213AA
Current - Reverse Leakage @ Vr: 2 µA @ 2.5 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 26 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
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1N5532BUR-1 1N5518BUR-1_1N5546BUR-1.pdf
1N5532BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5711-1 LDS-0040_r4%2C+1N5711-12_1N6857-58_DSB2810_5712%2C+MIL-PRF-19500-444.pdf
1N5711-1
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
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1N5822US LDS-0303-1%2C+1N5820US-1N5822US%2C1N6864US%2C+MIL-PRF-19500-620.pdf
1N5822US
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 40V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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1N5907 8921-lds-0095-datasheet
1N5907
Hersteller: Microchip Technology
Description: TVS DIODE 5VWM 8.5VC DO13
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 8.5V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: DO-13 (DO-202AA)
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 120A
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-202AA, DO-13, Axial
Packaging: Bulk
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1N6316US 11083-lds-0193-1-datasheet
1N6316US
Hersteller: Microchip Technology
Description: DIODE ZENER 4.7V 500MW SQ-MELF
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: B, SQ-MELF
Impedance (Max) (Zzt): 1500 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Produkt ist nicht verfügbar
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1N6325US lds-0193-1%2C+1N6309US-55US.pdf
1N6325US
Hersteller: Microchip Technology
Description: DIODE ZENER 11V 500MW SQ-MELF
Current - Reverse Leakage @ Vr: 1 µA @ 8.5 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Power - Max: 500 mW
Supplier Device Package: B, SQ-MELF
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Tolerance: ±5%
Packaging: Bulk
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1N6334US lds-0193-1%2C+1N6309US-55US.pdf
1N6334US
Hersteller: Microchip Technology
Description: DIODE ZENER 27V 500MW SQ-MELF
Produkt ist nicht verfügbar
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1N6335US 11083-lds-0193-1-datasheet
1N6335US
Hersteller: Microchip Technology
Description: DIODE ZENER 30V 500MW MELF
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1N6392 8886-lds-0053-datasheet
1N6392
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 45V 54A DO5
Produkt ist nicht verfügbar
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1N6490US 124793-lds-0183-1-datasheet
1N6490US
Hersteller: Microchip Technology
Description: DIODE ZENER 5.1V 1.5W D5A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 1.5 W
Supplier Device Package: D-5A
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Tolerance: ±5%
Packaging: Bulk
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1N6640US 1N6639US%2C_1N6640US%2C_1N6641US.pdf
1N6640US
Hersteller: Microchip Technology
Description: DIODE STANDARD 75V 300MA D5D
Packaging: Bulk
Package / Case: SQ-MELF, D
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 300mA
Supplier Device Package: D-5D
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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1N6643US 5895-1n6638-42-43us-datasheet
1N6643US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 50V 300MA D5B
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1N6659 8910-lds-0068-datasheet
1N6659
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 200V 15A TO254AA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Supplier Device Package: TO-254AA
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Packaging: Bulk
Produkt ist nicht verfügbar
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1N6663US 11107-sd88a-datasheet
1N6663US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 500MA D5A
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1N747A 1N746A-1-1N759A-1%2C1N4370A-1-1N4372A-1.pdf
1N747A
Hersteller: Microchip Technology
Description: DIODE ZENER 3.6V 500MW DO7
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-7 (DO-204AA)
Impedance (Max) (Zzt): 24 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AA, DO-7, Axial
Tolerance: ±5%
Packaging: Bulk
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6+3.61 EUR
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1N936A 1N935B-1_1N938B-1.pdf
1N936A
Hersteller: Microchip Technology
Description: DIODE ZENER 9V 500MW DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
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1N936B 1N935B-1_1N938B-1.pdf
1N936B
Hersteller: Microchip Technology
Description: DIODE ZENER 9V 500MW DO204AH
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 9 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
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1N938B 1N935B-1_1N938B-1.pdf
1N938B
Hersteller: Microchip Technology
Description: DIODE ZENER 9V 500MW DO204AH
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 9 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
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2+15.43 EUR
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1N945B 124507-lds-0222-datasheet
1N945B
Hersteller: Microchip Technology
Description: DIODE ZENER 11.7V 500MW DO35
Current - Reverse Leakage @ Vr: 15 µA @ 8 V
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 11.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N965BE3 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf
1N965BE3
Hersteller: Microchip Technology
Description: DIODE ZENER 15V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
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1N971BE3 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf
1N971BE3
Hersteller: Microchip Technology
Description: DIODE ZENER 27V 500MW DO204AH
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 41 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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2N2323S 6024-2n2323-datasheet
2N2323S
Hersteller: Microchip Technology
Description: SCR 50V TO5
Supplier Device Package: TO-5
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 2 mA
Operating Temperature: -65°C ~ 125°C
SCR Type: Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Voltage - Off State: 50 V
Part Status: Obsolete
Produkt ist nicht verfügbar
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2N3637UB 2N3634-2N3637UB-LDS-0156-MIL-PRF-19500-357.pdf
2N3637UB
Hersteller: Microchip Technology
Description: TRANS PNP 175V 1A UB
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 175 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tray
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2N3778 2N3778_Web.pdf
2N3778
Hersteller: Microchip Technology
Description: TRANS PNP TO-5
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2N6193 6106-2n6193-datasheet
2N6193
Hersteller: Microchip Technology
Description: TRANS PNP 100V 5A TO39
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
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1+27.1 EUR
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2N6317 125208-lds-0283-datasheet
2N6317
Hersteller: Microchip Technology
Description: TRANS PNP 60V 7A TO-213AA
Power - Max: 90 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 7 A
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2.5A, 4V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 1.75A, 7A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Produkt ist nicht verfügbar
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S3480 8542-coe-23-datasheet
S3480
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 45A DO203AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 90 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: DO-203AB (DO-5)
Current - Average Rectified (Io): 45A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
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SBR60100
SBR60100
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 100V 60A DO5
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 60A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
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SBR6030L
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 30V 60A DO203AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-203AB (DO-5)
Current - Average Rectified (Io): 60A
Technology: Schottky
Produkt ist nicht verfügbar
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UES1002 WT2-61_UES1001-1003.PDF
UES1002
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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UES1102SM UES1102SM_Web.pdf
UES1102SM
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 2.5A A-MELF
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UES1103 11536-wt2-63-datasheet
UES1103
Hersteller: Microchip Technology
Description: DIODE STANDARD 150V 2.5AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 2.5A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
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UES1103SM
UES1103SM
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 2.5A A-MELF
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: A-MELF
Current - Average Rectified (Io): 2.5A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
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1+39.44 EUR
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UES1104
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 1A AXIAL
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
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UES1106 11537-wt2-65-datasheet
UES1106
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
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1+39.88 EUR
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UES1303 11538-wt2-68-datasheet
UES1303
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 6A AXIAL
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UES706HR2 11292-ues704-6-datasheet
UES706HR2
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 20A DO4
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
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UFR3020 cod-47.pdf
UFR3020
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 30A DO4
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 140pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
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CDLL5246BE3
Hersteller: Microchip Technology
Description: DIODE ZENER 16V DO-213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-213AA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Produkt ist nicht verfügbar
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CDLL5312 1N5283UR-1_1N5314UR-1.pdf
CDLL5312
Hersteller: Microchip Technology
Description: DIODE CUR REG 100V 4.29MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 4.29mA
Voltage - Limiting (Max): 2.6V
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3+8.69 EUR
100+8.07 EUR
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JAN1N3174 8953-lds-0140-pdf
JAN1N3174
Hersteller: Microchip Technology
Description: DIODE STD 1000V 300A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
Qualification: MIL-PRF-19500/211
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JAN1N3595-1
Hersteller: Microchip Technology
Description: DIODE STD 125V 150MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
Produkt ist nicht verfügbar
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JAN1N4125-1 129734-lds-0245-2-datasheet
JAN1N4125-1
Hersteller: Microchip Technology
Description: DIODE ZENER 47V 500MW DO35
Current - Reverse Leakage @ Vr: 10 nA @ 35.8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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3+8.68 EUR
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JAN1N4150UR-1 1N4150.pdf
JAN1N4150UR-1
Hersteller: Microchip Technology
Description: DIODE STANDARD 50V 200MA DO213AA
Qualification: MIL-PRF-19500/231
Grade: Military
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Current - Average Rectified (Io): 200mA
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Bulk
Produkt ist nicht verfügbar
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JAN1N4153-1
Hersteller: Microchip Technology
Description: DIODE STANDARD 75V 150MA DO204AH
Produkt ist nicht verfügbar
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JAN1N4481 1N4460-1N4496.1N6485-1N6491.pdf
JAN1N4481
Hersteller: Microchip Technology
Description: DIODE ZENER 47V 1.5W DO204AL
Qualification: MIL-PRF-19500/406
Current - Reverse Leakage @ Vr: 50 nA @ 37.6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 1.5 W
Grade: Military
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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JAN1N5283-1 8970-lds-0159-pdf
JAN1N5283-1
Hersteller: Microchip Technology
Description: DIODE CUR REG 100V 242UA 500MW
Qualification: MIL-PRF-19500/463
Voltage - Limiting (Max): 1V
Regulator Current (Max): 242µA
Voltage - Anode - Cathode (Vak)(Max): 100V
Power - Max: 500mW
Grade: Military
Supplier Device Package: DO-7
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AA, DO-7, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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JAN1N5554US 10966-sa7-43-datasheet
JAN1N5554US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 5A D-5B
Qualification: MIL-PRF-19500/420
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Produkt ist nicht verfügbar
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JAN1N5615US 11062-sd47a-datasheet
JAN1N5615US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A D-5A
Qualification: MIL-PRF-19500/429
Grade: Military
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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